CN106876852B

CN106876852B - Connecting structure of upper and lower layer microstrip circuits of multilayer power divider

Info

Publication number: CN106876852B
Application number: CN201510927392.0A
Authority: CN
Inventors: 孔德武; 吴杨生; 唐杰
Original assignee: Leihua Electronic Technology Research Institute Aviation Industry Corp of China
Current assignee: Leihua Electronic Technology Research Institute Aviation Industry Corp of China
Priority date: 2015-12-14
Filing date: 2015-12-14
Publication date: 2020-01-10
Anticipated expiration: 2035-12-14
Also published as: CN106876852A

Abstract

The invention provides a connecting structure of an upper-layer microstrip circuit and a lower-layer microstrip circuit of a multilayer power divider, which comprises an upper-layer microstrip circuit (1), a lower-layer microstrip circuit (2), a floor (3), a metal conductive column (4) and a redundant copper layer circuit (5). Metal conductive column (4) crosses the metallized via hole and runs through upper microcircuit (1), floor (3), lower floor's microstrip circuit (2) increase copper redundant circuit (5) on upper microcircuit (1) and the junction of metal conductive column (4) lower floor's microstrip circuit (2) and metal conductive column (4) increase copper redundant circuit (5) under the junction of lower floor's microstrip circuit (4), copper redundant circuit (5) have increased the area of contact that metal conductive column (4) and upper microstrip circuit (1) metal conductive column (4) and lower floor's microstrip circuit (2).

Description

Connecting structure of upper and lower layer microstrip circuits of multilayer power divider

Technical Field

The invention belongs to the field of microwaves and antennas, and relates to a connecting structure of an upper layer microstrip circuit and a lower layer microstrip circuit of a multilayer power divider.

Background

A power divider (power divider) divides input signal power into equal or unequal multiplexed outputs. The power divider can be realized by various transmission lines, and most commonly mainly comprises a waveguide power divider, a coaxial line power divider and a microstrip line power divider. The waveguide power divider has the advantages of small loss and large power capacity. But the transmission line structure thereof determines the defects that the waveguide power divider is not easy to integrate and the size is difficult to miniaturize. The coaxial line power divider has the advantages of large power capacity and small loss, and has the defects of large standing-wave ratio of the output end and no isolation between output ports. Although the loss of the microstrip line structure power divider is slightly large, the microstrip line structure power divider has the advantages of compact structure, low cost, stable performance and easy integration with other active devices, and is widely applied to radar systems.

However, with the rapid development of the radar industry, higher performance indexes and size requirements are also put forward on the power divider. In the development and production of a certain novel radar, the assembled microstrip power divider circuit has high integration level and small volume, and is applied to an active phased array antenna microwave array transmission system in a large scale. Because the radar antenna has multiple functions, high integration level and strict requirements on the size, the size of the power divider is as small as possible while the electrical performance is ensured. The design of the multi-layer power divider can effectively reduce the size of the power divider, as shown in fig. 1. In the design of the traditional multilayer power divider, the metallized holes and the conductive columns are bridges for connecting the upper-layer microstrip circuit and the lower-layer microstrip circuit, and whether the metallized through holes and the conductive columns are in good contact with the upper-layer microstrip circuit and the lower-layer microstrip circuit directly determines the performance of the power divider. But the size of the metalized via hole on the soft dielectric plate is difficult to ensure by the existing processing technology. When the radius of the metalized via hole is larger, the metalized via hole cannot be well contacted with the conductive column, so that the performance of the power divider is influenced. When the radius of the metalized via hole is smaller, the metalized via hole is extruded by the conductive column in the assembling process, the metal surface of the via hole becomes rough, the discontinuity of the circuit is enhanced, and the conduction loss of the power divider is increased. In order to solve the problems, the specific redundant copper layer circuit is added at the connecting position of the metalized via hole, the conductive column and the upper and lower layer microstrip circuits so as to ensure the reliable contact of the upper and lower layer circuits of the power divider, improve the performance of the power divider and improve the yield of the power divider.

Disclosure of Invention

The purpose of the invention is:

the yield of the power divider is improved, and the debugging time of the power divider is effectively reduced.

The technical scheme of the invention provides:

the utility model provides a multilayer merit divides ware upper and lower layer microstrip circuit connection structure, includes upper microstrip circuit 1, lower floor's microstrip circuit 2, floor 3, metal and leads electrical pillar 4, redundant copper layer circuit 5. The metal conductive column 4 penetrates through the upper-layer micro circuit 1, the floor 3 and the lower-layer micro-strip circuit 2 through a metalized via hole, a redundant copper layer circuit 5 is additionally arranged at the joint of the upper-layer micro circuit 1 and the metal conductive column 4, the redundant copper layer circuit 5 is additionally arranged at the joint of the lower-layer micro-strip circuit 2 and the metal conductive column 4, the contact area of the metal conductive column 4 and the upper-layer micro-strip circuit 1 is increased through the redundant copper layer circuit 5, and the contact area of the metal conductive column 4 and the lower-layer micro-strip circuit 2 is increased.

The redundant copper layer circuit 5 comprises a connecting circuit 5-1, an adjusting circuit 5-2 and an amplifying circuit 5-3, wherein the connecting circuit 5-1 is connected with the metal conductive column 4, the connecting circuit 5-1 is provided with an arc chamfer 5-4 to improve discontinuity at the connection part so as to avoid generation of a higher-order mode, the adjusting circuit 5-2 is a copper layer circuit with an extremely narrow width, the adjusting circuit 5-2 is connected with the connecting circuit 5-1 and the amplifying circuit 5-3, and the amplifying circuit 5-3 is used for amplifying the contact area between the redundant copper layer circuit and the microstrip circuit.

The invention has the advantages that:

(1) the yield and the performance stability of the power divider are improved. The experimental results show that the finished product rate of the product adopting the method and the product not adopting the method is respectively 90 percent and 30 percent, and the finished product rate is improved by 60 percent.

(2) The debugging time of the power divider is effectively reduced. The statistical test results show that the debugging time of a single test piece is shortened from 2 hours to 10 minutes by adopting the method.

(3) The invention has simple design and is easy to transplant. The invention enhances the reliability of the connection of the multilayer circuit by additionally adding circuits at the connection parts of the metallized through holes and the conductive columns and the upper and lower layers of microstrip circuits, has simple structure and easy transplantation of the design method, and can be conveniently used in the microwave device designed by adopting the multilayer microstrip circuit.

(4) The invention is easy to realize. The metal circuit used by the invention is of a planar structure, the processing process is simple, the precision is easy to control, and the implementation is easy.

Drawings

The invention is illustrated in the following figures:

FIG. 1 is a schematic diagram of a multi-layer power divider;

FIG. 2 is a side view of a microstrip circuit connection structure;

FIG. 3 is a top view of a microstrip circuit connection structure;

FIG. 4 is a schematic diagram of a redundant copper layer circuit;

FIG. 5 is a side view of a conventional circuit connection;

fig. 6 is a top view of a conventional circuit connection.

Wherein:

a: the connection part of the upper and lower layers of microstrip circuit

1: micro-strip circuit on upper layer

2: lower layer microstrip circuit

3: floor board

4: metal conductive column

5: redundant copper layer circuit

5-1: connection circuit

5-2: regulating circuit

5-3: amplifying circuit

5-4: arc chamfer

Detailed Description

Fig. 1 is a schematic diagram of a multilayer power divider used at this time, in which an upper layer microstrip circuit and a lower layer microstrip circuit at a connection point a are connected by using a metalized via and a metal conductive pillar. Because the power divider designed at this time has more connection points, whether the connection between the multilayer circuits is reliable or not has great influence on the performance of the power divider.

For reliable connection of upper and lower microstrip circuits, the circuit used in the present invention is shown in fig. 2 and 3. The circuit comprises an upper-layer microstrip circuit 1, a lower-layer microstrip circuit 2, a floor 3, a metal conductive column 4 and a redundant copper layer circuit 5. The metal conductive column 4 penetrates through the upper-layer micro circuit 1, the floor 3 and the lower-layer micro-strip circuit 2 through a metalized via hole, and is characterized in that a redundant copper layer circuit 5 is additionally arranged at the joint of the upper-layer micro circuit 1 and the metal conductive column 4, a redundant copper layer circuit 5 is additionally arranged at the joint of the lower-layer micro-strip circuit 2 and the metal conductive column 4, the contact area of the metal conductive column 4 and the upper-layer micro-strip circuit 1 is increased through the copper redundant circuit 5, and the contact area of the metal conductive column 4 and the lower-layer micro-strip circuit 2 is increased. The redundant copper layer circuit 5 comprises a connecting circuit 5-1, an adjusting circuit 5-2 and an amplifying circuit 5-3, wherein the connecting circuit 5-1 is connected with the metal conductive column 4, the connecting circuit 5-1 is provided with an arc chamfer 5-4 to improve discontinuity at the connection part so as to avoid generation of a higher-order mode, the adjusting circuit 5-2 is a copper layer circuit with an extremely narrow width, the adjusting circuit 5-2 is connected with the connecting circuit 5-1 and the amplifying circuit 5-3, and the amplifying circuit 5-3 is used for amplifying the contact area between the redundant copper layer circuit and the microstrip circuit.

The added redundant copper layer circuit 5 has high processing precision under the existing process condition, and meanwhile, can be well connected with the upper and lower microstrip circuits through the fixed extrusion of the upper and lower substrates during assembly, thereby effectively improving the yield of the multilayer power divider. The experimental result shows that the finished product rate of the product adopting the invention and the finished product rate of the product not adopting the invention are respectively 90 percent and 30 percent, and the finished product rate is improved by 60 percent. The commissioning time was shortened to 10 minutes with the previous single piece of 2 hours. Obviously, the invention effectively improves the yield and debugging efficiency of the multilayer power divider.

Claims

1. A connecting structure of an upper layer microstrip circuit and a lower layer microstrip circuit of a multilayer power divider comprises an upper layer microstrip circuit (1), a lower layer microstrip circuit (2), a floor (3), a metal conductive column (4) and a redundant copper layer circuit (5); the metal conductive column (4) penetrates through the upper-layer micro circuit (1), the floor (3) and the lower-layer micro-strip circuit (2) through a metalized via hole, and is characterized in that a redundant copper layer circuit (5) is added at the joint of the upper-layer micro circuit (1) and the metal conductive column (4), the redundant copper layer circuit (5) is added below the joint of the lower-layer micro-strip circuit (2) and the metal conductive column (4), the contact area of the metal conductive column (4) and the upper-layer micro-strip circuit (1) is increased through the redundant copper layer circuit (5), and the contact area of the metal conductive column (4) and the lower-layer micro-strip circuit (2) is increased at the same time; the redundant copper layer circuit (5) comprises a connecting circuit (5-1), an adjusting circuit (5-2) and an expanding circuit (5-3), wherein the connecting circuit (5-1) is connected with the metal conductive column (4), the connecting circuit (5-1) is provided with an arc chamfer (5-4) to improve discontinuity of a connecting part so as to avoid generation of a higher-order mode, the adjusting circuit (5-2) is a copper layer circuit with an extremely narrow width, the adjusting circuit (5-2) is connected with the connecting circuit (5-1) and the expanding circuit (5-3), and the expanding circuit (5-3) expands the contact area of the redundant copper layer circuit and the microstrip circuit.