CN106802521B - Pixel structure, array substrate and liquid crystal display panel - Google Patents
Pixel structure, array substrate and liquid crystal display panel Download PDFInfo
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- CN106802521B CN106802521B CN201710205922.XA CN201710205922A CN106802521B CN 106802521 B CN106802521 B CN 106802521B CN 201710205922 A CN201710205922 A CN 201710205922A CN 106802521 B CN106802521 B CN 106802521B
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 title claims abstract description 38
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 238000002161 passivation Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
Abstract
The invention discloses a pixel structure, which comprises a thin film transistor and a pixel electrode electrically connected with the thin film transistor, wherein the pixel electrode comprises a first electrode layer and a second electrode layer which are arranged in a different layer structure, an insulating medium layer is arranged between the first electrode layer and the second electrode layer, the first electrode layer is a slit electrode comprising a plurality of strip-shaped first sub-electrodes, and a first slit is arranged between every two adjacent first sub-electrodes; the second electrode layer is oppositely positioned above the first electrode layer, the second electrode layer is a slit electrode comprising a plurality of strip-shaped second sub-electrodes, and a second slit is formed between every two adjacent second sub-electrodes; when the first electrode layer is projected on the second electrode layer, the first sub-electrode completely covers the second slit. The invention also discloses an array substrate and a liquid crystal display panel comprising the pixel structure.
Description
Technical Field
The invention relates to the technical field of displays, in particular to a pixel structure, and further relates to an array substrate and a liquid crystal display panel comprising the pixel structure.
Background
Liquid Crystal Displays (LCDs) have many advantages such as thin body, power saving, no radiation, and the like, and are widely used. Such as: liquid crystal televisions, mobile phones, Personal Digital Assistants (PDAs), digital cameras, computer screens, notebook computer screens, or the like.
With the progress of technology, liquid crystal displays have been developed in the direction of high contrast, no gray scale inversion, high brightness, high color saturation, fast response, and wide viewing angle. Common wide-view technologies include: twisted Nematic (TN) plus wide viewing film (wide viewing film), In-plane Switching (IPS) liquid crystal displays, Fringe Field Switching (FFS) liquid crystal displays, and Multi-domain vertical Alignment (MVA) liquid crystal displays.
For the conventional MVA technology lcd, the liquid crystal molecules in each pixel are arranged in multiple directions by the multi-domain alignment technology, so that the lcd device can meet the wide viewing angle requirement. In the MVA technology lcd, in order to facilitate the formation of multi-domains by the regular alignment of liquid crystals, the pixel electrode is usually formed as a slit electrode having a plurality of strip-shaped sub-electrodes spaced apart from each other. However, when the pixel electrode is made as a slit electrode, the liquid crystal above the stripe-shaped sub-electrode can be completely controlled by the electric field, but the liquid crystal above the slit cannot be effectively controlled. The prior art still needs to be improved and developed because the slit part can not effectively control the liquid crystal to affect the efficiency of the liquid crystal, and even can form some serious defects such as dark stripes.
Disclosure of Invention
In view of the defects in the prior art, the invention provides a pixel structure, wherein a pixel electrode can ensure that liquid crystal in the whole pixel region can be effectively controlled by an electric field on the premise of ensuring that the liquid crystal can be regularly oriented to form a multi-domain structure, so that the light transmission efficiency of the liquid crystal is improved, and the display quality is improved.
In order to achieve the purpose, the invention adopts the following technical scheme:
a pixel structure comprises a thin film transistor and a pixel electrode electrically connected with the thin film transistor, wherein the pixel electrode comprises a first electrode layer and a second electrode layer which are arranged in a different layer structure, an insulating medium layer is arranged between the first electrode layer and the second electrode layer, the first electrode layer is a slit electrode comprising a plurality of strip-shaped first sub-electrodes, and a first slit is arranged between every two adjacent first sub-electrodes; the second electrode layer is relatively positioned above the first electrode layer, the second electrode layer is a slit electrode comprising a plurality of strip-shaped second sub-electrodes, and a second slit is formed between every two adjacent second sub-electrodes; when the first electrode layer is projected on the second electrode layer, the first sub-electrode completely covers the second slit.
Preferably, when the first electrode layer is projected on the second electrode layer, the first sub-electrode and the second slit are complementary shape structures.
Preferably, in the second electrode layer, the width of the second sub-electrode is 4-5 μm, and the width of the second slit is 4-5 μm.
Preferably, the width of the second sub-electrode is equal to the width of the second slit.
The first electrode layer and the second electrode layer are made of transparent conductive materials.
And the first electrode layer and the second electrode layer are made of ITO.
Wherein the insulating medium layer is made of SiNxOr SiOx。
Wherein the thin film transistor includes a gate electrode, a gate insulating layer, an active layer, a source electrode, and a drain electrode; the gate electrode is formed on the substrate, the gate insulating layer is covered on the gate electrode, the active layer is formed on the gate insulating layer and is relatively positioned right above the gate electrode, and the source electrode and the drain electrode are formed on the gate insulating layer and are respectively electrically connected with the active layer; the source electrode and the drain electrode are covered by a passivation layer, and the pixel electrode is formed on the passivation layer and is electrically connected to the drain electrode through a via hole arranged in the passivation layer.
The invention also provides an array substrate, which comprises a substrate and a pixel structure arranged on the substrate in an array mode, wherein the pixel structure is the pixel structure.
The invention provides a liquid crystal display panel, which comprises a color film substrate and an array substrate which are oppositely arranged, wherein liquid crystal molecules are arranged between the color film substrate and the array substrate, and the array substrate adopts the array substrate.
Compared with the prior art, in the pixel structure provided by the embodiment of the invention, the pixel electrode comprises the first electrode layer and the second electrode layer which are both slit electrodes, and the second electrode layer positioned above the first electrode layer is a slit electrode, so that the liquid crystal is regularly oriented to form a multi-domain structure; the first electrode layer positioned below is also a slit electrode, and the strip-shaped sub-electrodes of the first electrode layer relatively cover the slit position of the second electrode layer, so that liquid crystal above the slit is effectively controlled, and therefore, the liquid crystal in the whole pixel area is effectively controlled by an electric field, the light transmission efficiency of the liquid crystal is improved, and the display quality is improved.
Drawings
FIG. 1 is a schematic structural diagram of a pixel structure according to an embodiment of the invention;
FIG. 2 is a schematic structural diagram of an array substrate according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a liquid crystal display panel in an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are exemplary only, and the invention is not limited to these embodiments.
It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, and other details not so relevant to the present invention are omitted.
Fig. 1 is a schematic structural diagram of a pixel structure in an embodiment of the present invention, and as shown in fig. 1, the pixel structure includes a thin film transistor 1 and a pixel electrode 2 electrically connected to the thin film transistor 1, and the thin film transistor 1 is used as a pixel driving device for controlling whether to input a pixel voltage to the pixel electrode 2.
The thin film transistor 1 includes a gate electrode 11, a gate insulating layer 12, an active layer 13, a source electrode 14, and a drain electrode 15. Specifically, as shown in fig. 1, the gate electrode 11 is formed on a substrate 10, the gate insulating layer 12 is disposed on the gate electrode 11, the active layer 13 is formed on the gate insulating layer 12 and is located right above the gate electrode 11, and the source electrode 14 and the drain electrode 15 are formed on the gate insulating layer 12 and are electrically connected to the active layer 13, respectively. Further, the source electrode 14 and the drain electrode 15 are covered with a passivation layer 4. The pixel electrode 2 is formed on the passivation layer 4, and the pixel electrode 2 is electrically connected to the drain electrode 15 through a via hole provided in the passivation layer 4.
Specifically, the substrate base plate 10 may be selected to be a glass substrate. The material of the gate electrode 11 may be any one or two selected from molybdenum (Mo), aluminum (Al), and copper (Cu). The material of the gate insulating layer 12 and the passivation layer 4 is mainly an inorganic insulating material, which may be SiN, for examplexOr SiOxOr a combination of both. The material of the active layer 13 may be selected from polysilicon, and a metal oxide semiconductor material may also be used. The material of the source electrode 14 and the drain electrode 15 may be selected from any one or two of molybdenum (Mo), aluminum (Al), and copper (Cu).
As shown in fig. 1, the pixel electrode 2 includes a first electrode layer 21 and a second electrode layer 22 which are arranged in a different layer structure, the second electrode layer 22 is relatively located above the first electrode layer 21, and an insulating medium layer 3 is arranged between the first electrode layer 21 and the second electrode layer 22. The first electrode layer 21 is a slit electrode including a plurality of elongated first sub-electrodes 21a, and a first slit 21b is provided between two adjacent first sub-electrodes 21 a. The second electrode layer 22 is a slit electrode including a plurality of second elongated sub-electrodes 22a, and a second slit 22b is provided between two adjacent second sub-electrodes 22 a. When the first electrode layer 21 is projected on the second electrode layer 22, the first sub-electrode 21a completely covers the second slit 22 b.
As the pixel structure provided above, wherein the pixel electrode 2 includes the first electrode layer 21 and the second electrode layer 22 which are both slit electrodes, since the second electrode layer 22 located above is a slit electrode, the liquid crystal can be regularly oriented to form a multi-domain structure; the first electrode layer 21 located below is also a slit electrode, and the strip-shaped sub-electrodes 21a of the first electrode layer 21 cover the slit position of the second electrode layer 22 relatively, so that the liquid crystal above the slit is also effectively controlled, and therefore, the liquid crystal in the whole pixel region is effectively controlled by an electric field, thereby improving the light transmission efficiency of the liquid crystal and improving the display quality.
In this embodiment, when the first electrode layer 21 is projected on the second electrode layer 22, the first sub-electrode 21a and the second slit 22b are complementary shapes, that is, the first sub-electrode 21a just completely covers the second slit 22b, and there is no overlapping area between the first sub-electrode 21a and the second sub-electrode 22 a. Of course, in some other embodiments, the first sub-electrode 21a has a region overlapping with the second sub-electrode 22a on the basis that the first sub-electrode 21a completely covers the second slit 22 b.
Specifically, the material of the first electrode layer 21 and the second electrode layer 22 is a transparent conductive material, preferably Indium Tin Oxide (ITO). The material of the insulating dielectric layer 3 is mainly an inorganic insulating material, and may be, for example, SiNxOr SiOxOr a combination of both.
In the present embodiment, in the second electrode layer 22, the width of the second sub-electrode 22a may be selected within a range of 4 to 5 μm, and the width of the second slit 22b may be selected within a range of 4 to 5 μm. In a preferred embodiment, the width of the second sub-electrode 22a and the width of the second slit 22b are set to be equal, for example, if the width of the second sub-electrode 22a is set to be 4 μm, the width of the second slit 22b is also set to be 4 μm; if the width of the second sub-electrode 22a is set to 5 μm, the width of the second slit 22b is also set to 5 μm. Of course, in other embodiments, the width of the second sub-electrode 22a and the width of the second slit 22b may also be set to be unequal, for example, if the width of the second sub-electrode 22a is set to be 4 μm, and the width of the second slit 22b is also set to be 5 μm.
Further, referring to fig. 2 and 3, the present embodiment also provides an array substrate and a liquid crystal display panel including the array substrate. The liquid crystal display panel comprises a color film substrate 100 and an array substrate 200 which are arranged oppositely, and liquid crystal molecules are arranged between the color film substrate 100 and the array substrate 200. The array substrate 200 includes a glass substrate 201 and a pixel structure 202 arranged on the glass substrate 201 in an array, and the pixel structure 202 adopts the pixel structure provided by the embodiment of the present invention.
In summary, in the pixel structure, the array substrate and the liquid crystal display panel provided in the embodiments of the present invention, the pixel electrode can make the liquid crystal in the entire pixel region obtain effective electric field control on the premise that the liquid crystal is regularly oriented to form a multi-domain structure, so as to improve the light transmission efficiency of the liquid crystal and improve the display quality.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The foregoing is directed to embodiments of the present application and it is noted that numerous modifications and adaptations may be made by those skilled in the art without departing from the principles of the present application and are intended to be within the scope of the present application.
Claims (10)
1. A pixel structure comprises a thin film transistor and a pixel electrode, and is characterized in that the pixel electrode comprises a first electrode layer and a second electrode layer which are arranged in a different layer structure, the first electrode layer and the second electrode layer are both electrically connected with the thin film transistor, an insulating medium layer is arranged between the first electrode layer and the second electrode layer, the first electrode layer is a slit electrode comprising a plurality of strip-shaped first sub-electrodes, and a first slit is arranged between every two adjacent first sub-electrodes; the second electrode layer is relatively positioned above the first electrode layer, the second electrode layer is a slit electrode comprising a plurality of strip-shaped second sub-electrodes, and a second slit is formed between every two adjacent second sub-electrodes; when the first electrode layer is projected on the second electrode layer, the first sub-electrode completely covers the second slit, and when the second electrode layer is projected on the first electrode layer, the second sub-electrode completely covers the first slit.
2. The pixel structure according to claim 1, wherein the first sub-electrode and the second slit have complementary shapes when the first electrode layer is projected on the second electrode layer.
3. The pixel structure according to claim 1 or 2, wherein the width of the second sub-electrode in the second electrode layer is 4-5 μm, and the width of the second slit is 4-5 μm.
4. The pixel structure of claim 3, wherein the width of the second sub-electrode is equal to the width of the second slit.
5. The pixel structure according to claim 1 or 2, wherein the material of the first electrode layer and the second electrode layer is a transparent conductive material.
6. The pixel structure according to claim 5, wherein the material of the first electrode layer and the second electrode layer is ITO.
7. The pixel structure of claim 1 or 2, wherein the insulating medium layer is made of SiNxOr SiOx。
8. The pixel structure according to claim 1 or 2, wherein the thin film transistor includes a gate electrode, a gate insulating layer, an active layer, a source electrode, and a drain electrode; the gate electrode is formed on the substrate, the gate insulating layer is covered on the gate electrode, the active layer is formed on the gate insulating layer and is relatively positioned right above the gate electrode, and the source electrode and the drain electrode are formed on the gate insulating layer and are respectively electrically connected with the active layer; the source electrode and the drain electrode are covered by a passivation layer, and the pixel electrode is formed on the passivation layer and is electrically connected to the drain electrode through a via hole arranged in the passivation layer.
9. An array substrate comprising a substrate and a pixel structure arranged on the substrate in an array, wherein the pixel structure is according to any one of claims 1 to 8.
10. A liquid crystal display panel, comprising a color film substrate and an array substrate which are oppositely arranged, wherein liquid crystal molecules are arranged between the color film substrate and the array substrate, and the array substrate is the array substrate of claim 9.
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