CN106784133A - A kind of method for controlling mercury cadmium telluride etching induction electricity inversion layer thickness - Google Patents
A kind of method for controlling mercury cadmium telluride etching induction electricity inversion layer thickness Download PDFInfo
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- CN106784133A CN106784133A CN201611059411.3A CN201611059411A CN106784133A CN 106784133 A CN106784133 A CN 106784133A CN 201611059411 A CN201611059411 A CN 201611059411A CN 106784133 A CN106784133 A CN 106784133A
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- China
- Prior art keywords
- etching
- inversion layer
- layer thickness
- cadmium telluride
- mercury cadmium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005530 etching Methods 0.000 title claims abstract description 64
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 title claims abstract description 25
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 24
- 230000005611 electricity Effects 0.000 title claims abstract description 13
- 230000006698 induction Effects 0.000 title claims abstract description 10
- 230000001939 inductive effect Effects 0.000 claims description 2
- 230000033228 biological regulation Effects 0.000 abstract description 3
- 238000004886 process control Methods 0.000 abstract description 2
- 230000032798 delamination Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a kind of method for controlling mercury cadmium telluride etching induction electricity inversion layer thickness, the method is to control etching induction electricity inversion layer thickness by controlling etching sample stage temperature in the etching process of mercury cadmium telluride.First, it is modeled by measuring the inversion layer thickness under different temperatures obtained by etching mercury-cadmium-tellurium, has obtained the relation curve of inversion layer thickness and etching temperature.According to this relation curve, you can control the thickness of etching inversion layer by controlling etching temperature.The inventive method can be realized just directly controlling p n junction structures in mercury cadmium telluride etching process, with precise process control, technique is integrated the features such as, for mercury cadmium telluride etching transoid regulation and control provide new control dimension.
Description
Technical field
The present invention relates to cadmium-telluride-mercury infrared detector chip manufacturing process technology, and in particular to one kind control mercury cadmium telluride etching
The method for inducing electricity inversion layer thickness.The method provides new control for regulation mercury cadmium telluride etching induction electricity inversion layer thickness
Means processed.
Background technology
Mercury-cadmium tellurid detector is, for obtaining object infrared information, and to carry out the imaging sensor of information processing simultaneously, its
All it is widely used in multiple fields such as Aeronautics and Astronautics, agricultural and oceans.One of core of mercury-cadmium tellurid detector manufacturing process is just
It is mercury cadmium telluride chip manufacturing process, including plated film, wet etching, dry etching, polishing, cutting, photoetching etc..Dry etching is general
Can be used for the preparation in isolated groove or deep concave station face, see E.P.G.Smith, J.K.Gleason, et al, " Inductively
coupled plasma etching of HgCdTe”,Journal of Electronic Materials,Vol.32,
2003,P816-820；Prepared by the pn-junction that it can be also used for some novel, special constructions, see C.A.Musca,
J.Antoszewski,et al,“Planar p-on-n HgCdTe heterojunction mid-wavelength
infrared photodiodes formed using plasma-induced junction isolation”,Journal
of Electronic Materials,Vol.32,2003,P622-626。
With the development of cadmium-telluride-mercury infrared detector, the third generation with the characteristics of small pixel, big array, multicolor etc. is infrared
Focus planardetector becomes more and more important.And the continuous reduction of the expansion and photosensitive elemental size with detector scale, make
The control for obtaining pn-junction requires also more and more higher.Used as one of most important technique of photovoltaic device, pn-junction size will directly affect height
The important indicators such as density, the responsiveness of small pixel dimension and detectivity.And always caused as the etching technics of committed step
Transoid, the pn-junction that this transoid is brought equally can produce critically important influence to device size.Therefore, mercury cadmium telluride etching technics is made
Into transoid also have to can quantify control.
The method for being presently available for changing inversion layer thickness is mainly control etch period, and this receives office very much in actual applications
Limit, because etch period can directly determine etch thicknesses, this allows for specific device architecture will the specific etching transoid of correspondence
Thickness degree., it is necessary to a kind of method can have the spies such as precise process is controlled, technique is integrated for the ad hoc structure for designing
Point, while ad hoc structure is prepared, so that it may reach preferable inversion layer thickness.This is accomplished by a new control dimension and has come
Into the regulation of etching inversion layer thickness.
The content of the invention
Based on above mentioned problem, mercury cadmium telluride etching is controlled to induce electricity inversion layer thickness it is an object of the invention to provide a kind of
Method.Precise control is carried out to the thickness of mercury cadmium telluride inversion layer by the temperature for adjusting etching sample stage.
To achieve the above object, the present invention first by serial experiment obtained etching temperature with etching inversion layer thickness it
Between relation.Etch process parameters are consistent at different temperatures：Gas is Ar2:CH4=30:1sccm, RF power 10W,
ICP power 1000W.Under conditions of only etching temperature is changed, multiple mercury cadmium telluride samples are measured using the method for delamination Hall
About 5 μm of inversion layer thickness for being formed are etched at different temperatures.Thus the pass of etching temperature and etching inversion layer thickness is set up
It is curve, etching temperature is set as -150 DEG C -+80 DEG C.The design temperature is also based on actually making for liquid nitrogen refrigerating etching system
Use temperature.
The control method of the mercury cadmium telluride etching induction electricity transoid in above-mentioned technical proposal is as follows：
1) model：Ar is in etching gas2:CH4=30:1sccm, RF power 10W, ICP power 1000W, only change and carve
Under conditions of erosion temperature, measure multiple mercury cadmium telluride samples and etch about 5 μm of inversion layer thickness for being formed at different temperatures, by
This sets up the relation curve of etching temperature and etching inversion layer thickness, and etching temperature is set as -150 DEG C -+80 DEG C；
2) according to step 1) obtain relation curve, according to needed for device control inversion layer thickness obtain mercury cadmium telluride etching
Required temperature data during etching, and then realize the control to mercury cadmium telluride etching induction electricity inversion layer thickness.
It is an advantage of the invention that：By changing etching temperature, the inversion layer that specific etching structure is designed can be directed to
Thickness.This method just can directly control p-n junction size in mercury cadmium telluride structure preparation process, be control etching transoid
There is provided a new control dimension, with precise process control, technique is integrated the features such as.
Brief description of the drawings
Fig. 1 is：The flow chart of precise control mercury cadmium telluride etching induction electricity inversion layer thickness；
Fig. 2 is：Etching transoid thickness and the relation of etching temperature that experiment and theory are obtained；
Specific embodiment
1) to -150 DEG C of etching temperature, 5 μm of etching depth, and 0 DEG C of etching temperature, the sample that 5 μm of etching depth is carried out
Thin layer hall measurement, it is 0.2 μm and 3 μm to obtain corresponding transoid thickness respectively, obtains etching temperature as shown in Figure 2 and carves
Lose the relation of inversion layer thickness；
2) for 5 μm of etching depth, the structure that 1 μm of transoid thickness.It is calculated etching temperature about 190K (about -83
℃).Write etch application：Etching gas are Ar2：CH4=30：1sccm, etching temperature is above-mentioned -83 DEG C.
3) sample is etched：Sample is adhered to on etching slide glass by vacuum silicon grease, runs the etching journey at a temperature of -83 DEG C
Sequence；
4) it is monitored using delamination Hall：The method for making sample according to standard delamination Hall and survey by the sample after etching
Method for testing is tested, and when principal carrier is changed into p-type from N-shaped, corrosion thickness is about 1000nm, as the etching temperature
Under, the thickness of mercury cadmium telluride etching induction electricity inversion layer.The value matches with calculated value.
Claims (1)
1. a kind of to control mercury cadmium telluride to etch the method for inducing electricity inversion layer thickness, its feature comprises the following steps：
1) model：Ar is in etching gas2:CH4=30:1sccm, RF power 10W, ICP power 1000W, only change etching temperature
Under conditions of degree, measure multiple mercury cadmium telluride samples and etch about 5 μm of inversion layer thickness for being formed at different temperatures, thus build
Vertical etching temperature and the relation curve for etching inversion layer thickness, etching temperature are set as -150 DEG C -+80 DEG C；
2) according to step 1) obtain relation curve, according to needed for device control inversion layer thickness obtain mercury cadmium telluride etching etching
The temperature data of Shi Suoxu, and then realize the control to mercury cadmium telluride etching induction electricity inversion layer thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611059411.3A CN106784133A (en) | 2016-11-25 | 2016-11-25 | A kind of method for controlling mercury cadmium telluride etching induction electricity inversion layer thickness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611059411.3A CN106784133A (en) | 2016-11-25 | 2016-11-25 | A kind of method for controlling mercury cadmium telluride etching induction electricity inversion layer thickness |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106784133A true CN106784133A (en) | 2017-05-31 |
Family
ID=58911560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611059411.3A Pending CN106784133A (en) | 2016-11-25 | 2016-11-25 | A kind of method for controlling mercury cadmium telluride etching induction electricity inversion layer thickness |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106784133A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0408276A2 (en) * | 1989-07-10 | 1991-01-16 | Texas Instruments Incorporated | Method for dry etching vias in integrated circuit layers |
| CN101226971A (en) * | 2008-02-01 | 2008-07-23 | 中国科学院上海技术物理研究所 | Method for reducing ion implantation damage influence of mercury cadmium telluride photovoltaic device |
| CN103236468A (en) * | 2013-04-16 | 2013-08-07 | 中国电子科技集团公司第十一研究所 | Low-damage high-uniformity etching method for hgcdte materials |
| US8541256B2 (en) * | 2011-04-17 | 2013-09-24 | Chang-Feng Wan | Method of cadmium molecular beam based anneals for manufacture of HgCdTe photodiode arrays |
-
2016
- 2016-11-25 CN CN201611059411.3A patent/CN106784133A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0408276A2 (en) * | 1989-07-10 | 1991-01-16 | Texas Instruments Incorporated | Method for dry etching vias in integrated circuit layers |
| CN101226971A (en) * | 2008-02-01 | 2008-07-23 | 中国科学院上海技术物理研究所 | Method for reducing ion implantation damage influence of mercury cadmium telluride photovoltaic device |
| US8541256B2 (en) * | 2011-04-17 | 2013-09-24 | Chang-Feng Wan | Method of cadmium molecular beam based anneals for manufacture of HgCdTe photodiode arrays |
| CN103236468A (en) * | 2013-04-16 | 2013-08-07 | 中国电子科技集团公司第十一研究所 | Low-damage high-uniformity etching method for hgcdte materials |
Non-Patent Citations (1)
| Title |
|---|
| 杨建荣: "《碲镉汞材料物理与技术》", 30 November 2012, 国防工业出版社 * |
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