CN106698328A - Pressure sensor and preparation method thereof - Google Patents
Pressure sensor and preparation method thereof Download PDFInfo
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- CN106698328A CN106698328A CN201510770539.XA CN201510770539A CN106698328A CN 106698328 A CN106698328 A CN 106698328A CN 201510770539 A CN201510770539 A CN 201510770539A CN 106698328 A CN106698328 A CN 106698328A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/007—For controlling stiffness, e.g. ribs
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
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- Microelectronics & Electronic Packaging (AREA)
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- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a pressure sensor and a preparation method thereof. The pressure sensor comprises reference capacitors and induction capacitors, wherein the reference capacitors and the induction capacitors are in array distribution on a semiconductor substrate; at the position of each reference capacitor, a pressure induction layer comprises a top wall, a bottom wall, a side wall and a plug structure, wherein the top wall, the bottom wall, the side wall and the semiconductor substrate form a hollow cavity in a surrounding manner, the top wall of the hollow cavity is opposite to a bottom contact electrode, and the plug structure is located in the hollow cavity, and supported between the semiconductor substrate and the top wall of the pressure induction layer; and the top wall of the pressure induction layer of each of the reference capacitors and the induction capacitors includes a protective layer with an annular groove. Compared with the prior art, a new reference capacitor structure not only avoids the structure difference of the reference capacitors and the induction capacitors in induction windows, but also avoids the response of the reference capacitors to the ambient air pressure by making the support structures below the induction windows of the reference capacitors, thereby further improving the device performance.
Description
Technical field
The present invention relates to micro-electromechanical system field, more particularly to a kind of pressure sensor and its preparation side
Method.
Background technology
MEMS (Microelectro Mechanical Systems, abbreviation MEMS) is in microelectronics skill
The research frontier of the multi-crossed disciplines grown up on the basis of art is a kind of using semiconductor technology manufacture
The technology of micro-electro-mechanical device.Compared with traditional electro-mechanical device, MEMS high temperature resistant, small size,
Low-power consumption aspect has fairly obvious advantage.By the development of decades, it has also become it is great that the world attractes attention
One of sciemtifec and technical sphere, it is related to electronics, machinery, material, physics, chemistry, biology, medical science etc. many
Subject and technology are planted, is had broad application prospects.
Pressure sensor is a kind of MEMS that pressure signal is converted to electric signal.According to operation principle
Different its can be divided into piezoresistive pressure sensor and capacitance pressure transducer,.Capacitance pressure transducer,
Principle is, by the electric capacity between pressure change pressure sensitive layer and bottom contact electrode, pressure to be measured with this.
However, in the pressure sensor of prior art, based on integrated capacitive pressure sensor on CMOS, be
CMOS passes through surface treatment integrated sensor after completing.Capacitance pressure transducer, is according to favour stone
Electrical bridge principle, is made up of reference capacitance and inductance capacitance two parts.Inductance capacitance is one more than reference capacitance
Window senses ambient pressure, and with air pressure change, the change that inductance capacitance passes through upper bottom crown spacing is realized
Electric capacity changes, and reference capacitance will not be with air pressure change.Finally by the contrast of inductance capacitance and reference capacitance
Realize that air pressure is exported, the use of reference capacitance effectively increases barometric surveying precision.But, due to reference capacitance
Sensing window of slotting fewer than inductance capacitance, this architectural difference causes to have impact on the further raising of device performance.
The content of the invention
It is an object of the present invention to provide a kind of pressure sensor and preparation method thereof, solves in the prior art
The bad problem of pressure sensitive layer electrology characteristic.
In order to solve the above technical problems, the present invention provides a kind of preparation method of pressure sensor, including：
A kind of preparation method of pressure sensor, it is characterised in that including：
Semiconductor substrate is provided, interconnection structure and bottom contact electrode is formed with the semiconductor substrate,
The surface of the semiconductor substrate exposes upper electrode, bottom contact electrode and the insulating barrier of interconnection structure；
Sacrifice layer is formed, the position of reference capacitance is being formed, the sacrifice layer includes the covering bottom contact electricity
The spaced column or cyclic structure of pole, have gap between the different structure of the sacrifice layer,
The position of inductance capacitance is formed, the sacrifice layer includes the block structure of covering bottom contact electrode；
Form pressure sensitive layer, the pressure sensitive layer covering sacrifice layer, the upper electrode of interconnection structure
And remaining semiconductor substrate surface, in the position of the reference capacitance, the pressure sensitive layer include roof,
Bottom wall, side wall and plug structure, the roof are located on the sacrifice layer, and the side wall is centered around described sacrificial
Around domestic animal layer, the bottom wall is located on the upper electrode of the interconnection structure, and the plug structure is located at sacrificial
The gap location of domestic animal layer, in the position of the inductance capacitance, the pressure sensitive layer includes roof, bottom wall, side
Wall, the roof is located on the sacrifice layer, and the side wall is centered around around the sacrifice layer, the bottom
Wall is located on the upper electrode of the interconnection structure；
Etched portions pressure sensitive layer, forms the opening of exposure sacrifice layer on the roof of partial pressure inductive layer,
Sacrifice layer is removed using the opening and form cavity, so as to form inductance capacitance and reference capacitance；
Protective layer is formed on pressure sensitive layer, is etched on each described inductance capacitance and reference capacitance
Protective layer, the pressure sensitive layer roof on form annular ditch groove.
Preferably, the structure of the sacrifice layer formed in the position for forming reference capacitance is correspondence in the bottom
Cyclic structure on contact electrode, and the column with the cyclic structure with gap is enclosed in the middle of ring-type
Structure.
Preferably, the column structure can be of correspondence bottom contact electrode center or evenly spaced
It is multiple.
Preferably, the structure of the sacrifice layer formed in the position for forming reference capacitance includes being connect corresponding to bottom
Block structure in touched electrode, and positioned at the block sacrifice layer periphery, and and between block sacrifice layer has
The ring-type or column structure of gap.
Preferably, the sacrifice layer of the inductance capacitance and the reference capacitance is formed in same depositing technics；Institute
The pressure sensitive layer for stating inductance capacitance and the reference capacitance is formed in same depositing step；The induced electricity
The step of holding the removal sacrifice layer with the reference capacitance is formed in same technique；The inductance capacitance and institute
The step of stating the formation protective layer of reference capacitance is formed in same technique.
In addition, the invention also discloses a kind of pressure sensor, including reference capacitance and inductance capacitance, including one
Semiconductor substrate, is formed with multiple interconnection structures and multiple bottom contact electrodes in the semiconductor substrate,
Each bottom contact electrode correspondence one reference capacitance or inductance capacitance, the surface of the semiconductor substrate
Expose upper electrode, bottom contact electrode and the insulating barrier of interconnection structure；
The reference capacitance and the inductance capacitance array distribution on the semiconductor substrate；
In the position of the reference capacitance, the pressure sensitive layer includes roof, bottom wall, side wall and plug structure,
The roof, bottom wall, side wall and semiconductor substrate surround a cavity, the roof of the cavity and the bottom
Contact electrode is relative；The plug structure is located in the cavity, is supported on the semiconductor substrate and pressure
Between the roof of inductive layer；
The position of the inductance capacitance, pressure sensitive layer includes roof, bottom wall and side wall, the roof,
Bottom wall, side wall and semiconductor substrate surround a cavity, the roof of the cavity and the bottom contact electrode phase
It is right；
Include having on the roof of the pressure sensitive layer of described each described reference capacitance and the inductance capacitance
The protective layer of annular ditch groove.
Preferably, the plug structure of the position in formation reference capacitance is the correspondence in the cavity
Column structure on the bottom contact electrode.
Preferably, the column structure can be of correspondence bottom contact electrode center or evenly spaced
It is multiple.
Preferably, the plug structure in the position of formation reference capacitance is that in the cavity, correspondence is the bottom of at
The ring-type or column structure of portion contact electrode periphery.
Compared with prior art, the preparation method of the pressure sensor that the present invention is provided has advantages below：
New reference capacitance structure had both avoided the architectural difference of reference capacitance and inductance capacitance in sensing window,
A supporting construction is done further through below reference capacitance sensing window, it is to avoid reference capacitance air pressure response to external world.
The further performance that improve device.
Brief description of the drawings
Fig. 1 is the flow chart of the preparation method of pressure sensor in one embodiment of the invention；
Fig. 2 to Fig. 7 is the section of device architecture in the preparation process of pressure sensor in one embodiment of the invention
Schematic diagram.
Specific embodiment
In the pressure sensor of prior art, based on integrated capacitive pressure sensor on CMOS, be
CMOS passes through surface treatment integrated sensor after completing.Capacitance pressure transducer, is according to favour stone
Electrical bridge principle, is made up of reference capacitance and inductance capacitance two parts.Inductance capacitance is one more than reference capacitance
Window senses ambient pressure, and with air pressure change, the change that inductance capacitance passes through upper bottom crown spacing is realized
Electric capacity changes, and reference capacitance will not be with air pressure change.Finally by the contrast of inductance capacitance and reference capacitance
Realize that air pressure is exported, the use of reference capacitance effectively increases barometric surveying precision.But due to than inductance capacitance
Few fluting sensing window, this architectural difference causes to have impact on the further raising of device performance.
Inventor has found sensing window of being slotted because reference capacitance is fewer than inductance capacitance by research, therefore is receiving
The change of reference capacitance and inductance capacitance is just inconsistent when temperature influence and stress influence, so that pressure
The accuracy of sensor is poor, it is contemplated that the reason, and therefore inventor is made that improvement to the structure of reference capacitance,
Fluting is also carried out to protective layer, has been close to if inductance capacitance, but fluting if pressure sensitive layer is surrounded
Cavity in there is no support to cause reference capacitance with the change of pressure, therefore inventor is further to structure
Improved.
The preparation method of pressure sensor of the invention is described in more detail below in conjunction with schematic diagram,
Which show the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can change and be described herein
The present invention, and still realize advantageous effects of the invention.Therefore, description below be appreciated that for
Those skilled in the art's is widely known, and is not intended as limitation of the present invention.
For clarity, not describing whole features of practical embodiments.In the following description, public affairs are not described in detail
The function and structure known, because they can make the present invention chaotic due to unnecessary details.It will be understood that
In the exploitation of any practical embodiments, it is necessary to make a large amount of implementation details to realize the specific objective of developer,
For example according to about system or the limitation about business, another embodiment is changed into by one embodiment.Separately
Outward, it will be understood that this development is probably complicated and time-consuming, but for people in the art
It is only routine work for member.
The present invention is more specifically described by way of example referring to the drawings in the following passage.According to it is following explanation and
Claims, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is using very simple
The form of change and use non-accurately ratio, be only used to conveniently, lucidly aid in illustrating the embodiment of the present invention
Purpose.
With reference to shown in Fig. 1, the preparation method of pressure sensor of the invention specifically includes following steps：
Step S11, there is provided semiconductor substrate, is formed with multiple interconnection structures and many in the semiconductor substrate
Individual bottom contact electrode, each bottom contact electrode correspondence one reference capacitance or inductance capacitance are described
The surface of semiconductor substrate exposes upper electrode, bottom contact electrode and the insulating barrier of interconnection structure；
Step S12, forms sacrifice layer, is forming the position of reference capacitance, and the sacrifice layer includes that covering is described
The spaced column or cyclic structure of bottom contact electrode, have between the different structure of the sacrifice layer
There is gap, forming the position of inductance capacitance, the sacrifice layer includes the block knot of covering bottom contact electrode
Structure；
Step S13, form pressure sensitive layer, the pressure sensitive layer covering sacrifice layer, interconnection structure
Upper electrode and remaining semiconductor substrate surface, in the position of the reference capacitance, the pressure sensitive layer
Including roof, bottom wall, side wall and plug structure, the roof is located on the sacrifice layer, and the side wall encloses
It is wound on around the sacrifice layer, the bottom wall is located on the upper electrode of the interconnection structure, the connector
Structure is located at the gap location of sacrifice layer, in the position of the inductance capacitance, the pressure sensitive layer include roof,
Bottom wall, side wall, the roof are located on the sacrifice layer, and the side wall is centered around around the sacrifice layer,
The bottom wall is located on the upper electrode of the interconnection structure；
Step S14, etched portions pressure sensitive layer forms exposure sacrifice on the roof of partial pressure inductive layer
The opening of layer, removes sacrifice layer and forms cavity, so as to form inductance capacitance and reference capacitance using the opening；
Step S15, protective layer is formed on pressure sensitive layer, etches each described inductance capacitance and ginseng
The protective layer on electric capacity is examined, annular ditch groove is formed on the roof of pressure sensitive layer.
Meanwhile, present invention also offers a kind of pressure sensor structure, it includes：Including semiconductor substrate,
Multiple interconnection structures and multiple bottom contact electrodes, the contact of each bottom are formed with the semiconductor substrate
Electrode pair answers a reference capacitance or inductance capacitance, the surface exposure interconnection structure of the semiconductor substrate
Upper electrode, bottom contact electrode and insulating barrier；
The reference capacitance and the inductance capacitance array distribution on the semiconductor substrate；
In the position of the reference capacitance, the pressure sensitive layer includes roof, bottom wall, side wall and plug structure,
The roof, bottom wall, side wall and semiconductor substrate surround a cavity, the roof of the cavity and the bottom
Contact electrode is relative；The plug structure is located in the cavity, is supported on the semiconductor substrate and pressure
Between the roof of inductive layer；
The position of the inductance capacitance, pressure sensitive layer includes roof, bottom wall and side wall, the roof,
Bottom wall, side wall and semiconductor substrate surround a cavity, the roof of the cavity and the bottom contact electrode phase
It is right；
Include having on the roof of the pressure sensitive layer of described each described reference capacitance and the inductance capacitance
The protective layer of annular ditch groove.
Fig. 2 to Fig. 7 shows for the section of device architecture in pressure sensor preparation process in one embodiment of the invention
It is intended to, below in conjunction with Fig. 2 to Fig. 4 more detailed descriptions pressure sensor of the invention and preparation method thereof.
First, step S11 is carried out, with reference to shown in Fig. 2, there is provided semiconductor substrate 10, semiconductor substrate
10 can include the silicon base of monocrystalline, germanium silicon base, germanium substrate or well known to a person skilled in the art other half
The substrate that conductor material is made, and can have polysilicon, germanium or germanium silicon material in substrate Epitaxial growth,
Can also the material such as epitaxial growth silica.
Be embedded with the semiconductor substrate 10 control circuit (not shown), several interconnection structures 11 with
And several bottom contact electrodes 12, the upper electrode 112 and bottom contact electrode 12 of the interconnection structure are located at
Same plane, each bottom contact electrode correspondence one reference capacitance or inductance capacitance, the semiconductor
The surface of substrate exposes upper electrode, bottom contact electrode and the insulating barrier of interconnection structure.Bottom contact electricity
The material of pole 12 and upper electrode 112 is selected from aluminium, but is not limited to aluminium, can also for titanium, titanium nitride, silver,
A kind of or their any combination in gold, copper, tungsten, cobalt, nickel, tantalum, platinum.
It should be noted that other device architectures can also be formed with semiconductor base 10, for example, amplify
Device, D/A converter, analog processing circuit and/or digital processing circuit, interface circuit etc., form these devices
The method of part structure can be CMOS technology.Additionally, interconnection structure 11 can include embolism and lower floor's gold
Category layer, its specific structure needs to determine according to actual conditions that the interconnection structure 11 in Fig. 2 only plays signal and makees
With not making any limitation to the present invention.
Secondly, step S12 is carried out, with reference to shown in Fig. 3 and Fig. 4, Fig. 4 is the top view of Fig. 3, described
The semiconductor substrate surface of bottom contact electrode 12 and surrounding forms sacrifice layer 20, and the sacrifice layer 20 is follow-up
It is removed, so as to form cavity, the change of inductance capacitance between pressure sensitive layer and bottom contact electrode 12.
The sacrifice layer 20 is, for example, amorphous carbon, and the method for forming amorphous carbon is PECVD
Deposition (PECVD) technique.The parameter of plasma reinforced chemical vapour deposition technique is, for example,：Temperature range is
250 DEG C~420 DEG C, air pressure range is 1torr~20tort, and RF power brackets are 800W~2000W, reaction
Gas includes C3H6And He, reaction gas flow is 1000sccm~4200sccm, wherein C3H6∶He
Volume ratio scope be 2: 1~10: 1.It should be noted that the material of sacrifice layer 20 be not limited to it is non-
Brilliant carbon, or other materials well known in the art, such as silica, non-crystalline silicon, amorphous germanium,
Photoresist, polyimides etc..The sacrifice layer of the reference capacitance and the sacrifice layer of inductance capacitance are in same shallow lake
Formed in product technique, photoetching and etching by different mask plates form the sacrifice layer of different structure.
Between the sacrifice layer of the position of reference capacitance includes the covering bottom contact electrode in the present invention
Every the column or cyclic structure of arrangement, there is gap between the different structure of the sacrifice layer, feel being formed
The position of electric capacity is answered, the sacrifice layer includes the block structure of covering bottom contact electrode.For example in this implementation
In, the structure of the sacrifice layer formed in the position for forming reference capacitance is contacted for corresponding in the bottom
Cyclic structure on electrode, and the column structure with the cyclic structure with gap is enclosed in the middle of ring-type.
In addition, in other embodiments, the column structure can be the one of correspondence bottom contact electrode center
Individual or evenly spaced multiple.It can also be the sacrifice layer formed in the position for forming reference capacitance
Structure includes corresponding to the block structure on bottom contact electrode, and positioned at the block sacrifice layer periphery,
And there is the ring-type or column structure in gap with block sacrifice layer.
Then, step S13 is carried out, with reference to shown in Fig. 5, pressure sensitive layer, the pressure sensitive layer is formed
30 material is, for example, SiGe, can strengthen chemical vapor deposition (PECVD) or low with using plasma
Pressure chemical vapor deposition (LPCVD) process deposits SiGe.LPCVD, LPCVD are used in the present embodiment
Technological parameter be：Temperature range is 400 DEG C -450 DEG C, and air pressure range is 150mtorr~200mtorr, is formed
SiGe material be Si1-xGex, the span of x between 0.5 to 0.8, Si1-xGexThickness exist
Between 0.1 μm~3.0 μm.As previously described, it is also possible to which using plasma strengthens chemical vapor deposition (PECVD)
Deposition SiGe, it is preferred to use LPCVD, it can be compatible with processing procedure below, Simplified flowsheet.
The pressure sensitive layer of the reference capacitance and pressure sensitive layer shape in same depositing technics of inductance capacitance
Into.Because sacrifice layer has gap in reference capacitance, therefore feeling of stress can be formed in the gap of sacrifice layer
The connector of layer is answered, so that these connectors play a part of support cavity after sacrifice layer is removed so that reference
Electric capacity is not with pressure change.
Then, step S14 is carried out, with reference to Fig. 6, first one layer of photoetching glue material is formed on pressure sensitive layer 30
The photoresistance of material, then using photoetching, forms some openings in the photoresist.Specifically, spin coating light can be used
Resistance, the thickness of photoresistance is, for example, 0.1 μm~3.0 μm, and using steps such as exposure, developments, forms patterning
Photoresistance, i.e. mask layer 600, utilize plasma etch process under the protection of mask layer, etch pressure sensitive
Layer forms the opening 310, also, the exposure of opening 310 sacrifice layer 200.Specific etching work
Photoresistance of the skill to pattern, i.e. mask layer 600 are pressure sensitive layer described in mask etching, in the present embodiment,
Using CF4Plasma etching, removes mask layer afterwards, and the technique of the removal mask layer can be using this
Method known to art personnel.Then, using cineration technics, gone by the described first opening 310
Except the sacrifice layer 200, institute is formed between pressure sensitive layer 300 and the bottom contact electrode 122
State cavity 320.The method for removing sacrifice layer 200 is cineration technics, i.e., etch amorphous using oxygen gas plasma
Carbon, amorphous carbon generates carbon dioxide with oxygen, is volatilized away from the first opening 310.
Then step S15 is performed, with reference to Fig. 7, protective layer, the protection is formed on pressure sensitive layer
The material of layer can be silica or silicon nitride, then using etching technics, in each reference capacitance
Protective layer with inductance capacitance position is performed etching, in the protection of the correspondence position of pressure sensitive layer ceiling edge
One is formed in layer and encloses ring-shaped groove, i.e. annular opening.
In the present invention, it is because the protective layer of inductance capacitance and reference capacitance all has ring-shaped groove therefore right
The identical when influence of temperature and stress, so as to solve reference capacitance and inductance capacitance contrast electrology characteristic
Inaccurate problem.
Present invention provides a kind of pressure sensor, including reference capacitance and inductance capacitance, including semiconductor
Substrate, is formed with multiple interconnection structures and multiple bottom contact electrodes, each bottom in the semiconductor substrate
Portion's contact electrode pair answers a reference capacitance or inductance capacitance, the surface exposure interconnection of the semiconductor substrate
The upper electrode of structure, bottom contact electrode and insulating barrier；
The reference capacitance and the inductance capacitance array distribution on the semiconductor substrate；
In the position of the reference capacitance, the pressure sensitive layer includes roof, bottom wall, side wall and plug structure,
The roof, bottom wall, side wall and semiconductor substrate surround a cavity, the roof of the cavity and the bottom
Contact electrode is relative；The plug structure is located in the cavity, is supported on the semiconductor substrate and pressure
Between the roof of inductive layer；
The position of the inductance capacitance, pressure sensitive layer includes roof, bottom wall and side wall, the roof,
Bottom wall, side wall and semiconductor substrate surround a cavity, the roof of the cavity and the bottom contact electrode phase
It is right；
Include having on the roof of the pressure sensitive layer of described each described reference capacitance and the inductance capacitance
The protective layer of annular ditch groove.
Preferably, the plug structure of the position in formation reference capacitance is the correspondence in the cavity
Column structure on the bottom contact electrode.
Preferably, the column structure can be of correspondence bottom contact electrode center or evenly spaced
It is multiple.
Preferably, the plug structure in the position of formation reference capacitance is that in the cavity, correspondence exists
The ring-type or column structure of bottom contact electrode periphery.
Obviously, those skilled in the art can carry out various changes and modification without deviating from this hair to the present invention
Bright spirit and scope.So, if it is of the invention these modification and modification belong to the claims in the present invention and
Within the scope of its equivalent technologies, then the present invention is also intended to comprising these changes and modification.
Claims (9)
1. a kind of preparation method of pressure sensor, it is characterised in that including：
Semiconductor substrate is provided, multiple interconnection structures is formed with the semiconductor substrate and multiple bottoms is connect
Touched electrode, each bottom contact electrode correspondence one reference capacitance or inductance capacitance are described semiconductor-based
The surface of plate exposes upper electrode, bottom contact electrode and the insulating barrier of interconnection structure；
Sacrifice layer is formed, the position of reference capacitance is being formed, the sacrifice layer includes the covering bottom contact electricity
The spaced column or cyclic structure of pole, have gap between the different structure of the sacrifice layer,
The position of inductance capacitance is formed, the sacrifice layer includes the block structure of covering bottom contact electrode；
Form pressure sensitive layer, the pressure sensitive layer covering sacrifice layer, the upper electrode of interconnection structure
And remaining semiconductor substrate surface, in the position of the reference capacitance, the pressure sensitive layer include roof,
Bottom wall, side wall and plug structure, the roof are located on the sacrifice layer, and the side wall is centered around described sacrificial
Around domestic animal layer, the bottom wall is located on the upper electrode of the interconnection structure, and the plug structure is located at sacrificial
The gap location of domestic animal layer, in the position of the inductance capacitance, the pressure sensitive layer includes roof, bottom wall, side
Wall, the roof is located on the sacrifice layer, and the side wall is centered around around the sacrifice layer, the bottom
Wall is located on the upper electrode of the interconnection structure；
Etched portions pressure sensitive layer, forms the opening of exposure sacrifice layer on the roof of partial pressure inductive layer,
Sacrifice layer is removed using the opening and form cavity, so as to form inductance capacitance and reference capacitance；
Protective layer is formed on pressure sensitive layer, is etched on each described inductance capacitance and reference capacitance
Protective layer, the pressure sensitive layer roof on form annular ditch groove.
2. the preparation method of pressure sensor as claimed in claim 1, it is characterised in that described to be formed
The structure of the sacrifice layer that the position of reference capacitance is formed is ring-type knot of the correspondence on the bottom contact electrode
Structure, and the column structure with the cyclic structure with gap is enclosed in the middle of ring-type.
3. the preparation method of pressure sensor as claimed in claim 2, it is characterised in that the column knot
Structure can be one or the evenly spaced multiple at correspondence bottom contact electrode center.
4. the preparation method of pressure sensor as claimed in claim 1, it is characterised in that described to be formed
The structure of the sacrifice layer that the position of reference capacitance is formed includes corresponding to the block structure on bottom contact electrode,
And positioned at the block sacrifice layer periphery, and there is the ring-type or column structure in gap with block sacrifice layer.
5. the preparation method of pressure sensor as claimed in claim 1, it is characterised in that the induced electricity
Hold and the sacrifice layer of the reference capacitance is formed in same depositing technics；The inductance capacitance and the reference
The pressure sensitive layer of electric capacity is formed in same depositing step；The inductance capacitance and the reference capacitance go
The step of except sacrifice layer, is formed in same technique；The formation protection of the inductance capacitance and the reference capacitance
The step of layer, is formed in same technique.
6. a kind of pressure sensor, including reference capacitance and inductance capacitance, it is characterised in that
Including semiconductor substrate, multiple interconnection structures and multiple bottom contact electricity are formed with the semiconductor substrate
Pole, each bottom contact electrode correspondence one reference capacitance or inductance capacitance, the semiconductor substrate
Surface exposes upper electrode, bottom contact electrode and the insulating barrier of interconnection structure；
The reference capacitance and the inductance capacitance array distribution on the semiconductor substrate；
In the position of the reference capacitance, the pressure sensitive layer includes roof, bottom wall, side wall and plug structure,
The roof, bottom wall, side wall and semiconductor substrate surround a cavity, the roof of the cavity and the bottom
Contact electrode is relative；The plug structure is located in the cavity, is supported on the semiconductor substrate and pressure
Between the roof of inductive layer；
The position of the inductance capacitance, pressure sensitive layer includes roof, bottom wall and side wall, the roof,
Bottom wall, side wall and semiconductor substrate surround a cavity, the roof of the cavity and the bottom contact electrode phase
It is right；
Include having on the roof of the pressure sensitive layer of described each described reference capacitance and the inductance capacitance
The protective layer of annular ditch groove.
7. pressure sensor as claimed in claim 6, it is characterised in that described to form the position of reference capacitance
The plug structure put is column structure of the correspondence on the bottom contact electrode in the cavity.
8. pressure sensor as claimed in claim 7, it is characterised in that the column structure can be correspondence
One or the evenly spaced multiple at bottom contact electrode center.
9. pressure sensor as claimed in claim 7, it is characterised in that forming the position of reference capacitance
Plug structure is ring-type or column structure of the correspondence in bottom contact electrode periphery in the cavity.
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| CN201510770539.XA CN106698328A (en) | 2015-11-12 | 2015-11-12 | Pressure sensor and preparation method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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