CN106663640A - Method of providing an electronic device and electronic device thereof - Google Patents
Method of providing an electronic device and electronic device thereof Download PDFInfo
- Publication number
- CN106663640A CN106663640A CN201580038025.3A CN201580038025A CN106663640A CN 106663640 A CN106663640 A CN 106663640A CN 201580038025 A CN201580038025 A CN 201580038025A CN 106663640 A CN106663640 A CN 106663640A
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- Prior art keywords
- device substrate
- carrier substrates
- bonding
- substrate
- modified layer
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Links
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83053—Bonding environment
- H01L2224/8309—Vacuum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8334—Bonding interfaces of the layer connector
- H01L2224/83359—Material
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
- Laminated Bodies (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Some embodiments include a method. The method can comprise: providing a carrier substrate; providing an adhesion modification layer over the carrier substrate; providing a device substrate; and coupling the device substrate and the carrier substrate together, the adhesion modification layer being located between the device substrate and the carrier substrate when the device substrate and the carrier substrate are coupled together. In these embodiments, the adhesion modification layer can be configured so that the device substrate couples indirectly with the carrier substrate by way of the adhesion modification layer with a first bonding force that is greater than a second bonding force by which the device substrate couples with the carrier substrate absent the adhesion modification layer. Other embodiments of related methods and devices are also disclosed.
Description
With regard to the research supported by federal government or the statement of exploitation
The present invention is made under governmental support under the W911NF-04-2-0005 that Army Research Office is authorized.Political affairs
Mansion has in the present invention some rights.
Cross-Reference to Related Applications
This application claims the interests of the U.S. Provisional Patent Application No. 61/992,799 of the submission of on May 13rd, 2014.The U.S.
Provisional Patent Application No. 61/992,799 is fully incorporated in this by quoting with it.
Technical field
Present invention relates in general to manufacture electronic device, and relate more specifically to manufacture on flexible substrates with one
Or the electronic device and the electronic device that thus manufactures of multiple semiconductor elements.
Background technology
In electronic device industry, flexible substrate is quickly becoming increasingly by joyous as the substrate for electronic device
Meet.Flexible substrate can include diversified material, such as any one of the following：Substantial amounts of plastics, metal forming
With glass (for example, fluorosilicate glass, Pyrex, healthy and free from worry (Corning)Glass, WillowTMGlass, and/or
Vitrelle glass etc.).Once one or more desired semiconductor elements are defined on the surface of flexible substrate, it is flexible
Substrate can be attached on final products or be attached in further structure.The typical case of this product or structure is flat
RFID (RF identification) label, various sensings on the various commercial products in active matrix, retail shop on panel display
Device etc..
Need in the art to develop a kind of method for electronic device of the manufacture with flexible substrate, the method is allowed
Electrical characteristic is improved, such as being improved to parameter characteristic and/or service life, and is allowed to reduce bowing, stuck up
Bent, and/or deformation.
Description of the drawings
These embodiments are further described for convenience, there is provided drawings described below, in the accompanying drawings：
Fig. 1 illustrates the flow chart of the embodiment of the method for providing semiconductor device；
Fig. 2 illustrates the example activity of the carrier substrates of the offer semiconductor device of the embodiment according to Fig. 1；
What Fig. 3 illustrated the embodiment according to Fig. 1 provides the viscous of semiconductor device at least a portion of carrier substrates
Connect the example activity of modified layer；
Fig. 4 illustrates the local that the semiconductor device after bonding modified layer is provided in carrier substrates according to embodiment
Cross-sectional view；
Fig. 5 illustrates the partial cross section view of the semiconductor device according to embodiment, wherein, removed by etching
The middle body of the bonding modified layer of semiconductor device, to leave the peripheral part of bonding modified layer and to expose carrier lining
Bottom；
Fig. 6 illustrates providing after bonding agent in carrier substrates and in bonding modified layer for the embodiment according to Fig. 4
The partial cross section view of semiconductor device；
Fig. 7 illustrates the example activity for being linked together device substrate and carrier substrates of the embodiment according to Fig. 1；
Fig. 8 illustrates the example activity being directly bonded to device substrate according to the embodiment of Fig. 7 in bonding modified layer；
Fig. 9 illustrates being directly bonded to device substrate in bonding modified layer and bonding for the embodiment according to Fig. 5
The partial cross section view of the semiconductor device after in the carrier substrates；
What Figure 10 illustrated the embodiment according to Fig. 7 is adhered to showing in bonding modified layer by bonding agent by device substrate
Example sexual activity；
Figure 11 illustrate according to the embodiment of Fig. 4 by device substrate by adhesive bonds in bonding modified layer and
The partial cross section view of the semiconductor device after being bonded in carrier substrates；
Figure 12 illustrates the providing on the device substrate after one or more semiconductor elements of the embodiment according to Fig. 4
The partial cross section view of semiconductor device；
Figure 13 illustrates the providing on the device substrate after one or more semiconductor elements of the embodiment according to Fig. 5
The partial cross section view of semiconductor device；
Figure 14 illustrate the embodiment according to Fig. 5 by the non-device portion of the device portions of device substrate and device substrate
The partial cross section view of the semiconductor device after cutting is disconnected；
Figure 15 illustrates the semiconductor device after device substrate is separated with carrier substrates of the embodiment according to Fig. 4
Device substrate cross-sectional view；
Figure 16 illustrates the semiconductor device after device portions are separated with carrier substrates of the embodiment according to Fig. 5
Device substrate device portions cross-sectional view；
Figure 17 is illustrated according to by PEN (PEN) device by fourier transform infrared spectroscopy
Substrate is adhered to the chart of the absorbance of the wave number change of the solidification bonding agent on silicon carrier substrate, wherein having deducted silicon carrier lining
The frequency spectrum at bottom；
Figure 18 is the chart of the relevant range for illustrating Figure 17；
Figure 19 is that the absorbance according to the change of the wave number of the following is illustrated by fourier transform infrared spectroscopy
Chart：(i) unprocessed PEN (PEN) device substrate；(ii) changing with non-crystalline silicon (a-Si) bonding
Property layer silicon carrier substrate on processing and PEN detached with silicon carrier substrate (PEN) device substrate；
And (iii) is processed not having on the silicon carrier substrate of non-crystalline silicon (a-Si) bonding modified layer and separated with silicon carrier substrate
PEN (PEN) device substrate；And
Figure 20 is that the absorbance according to the change of the wave number of the following is illustrated by fourier transform infrared spectroscopy
Chart：I () is in first PEN without processing on the silicon carrier substrate of non-crystalline silicon bonding modified layer
(PEN) device substrate, wherein separate PEN (PEN) device substrate with silicon carrier substrate, and
The frequency spectrum of the second PEN (PEN) device substrate is deducted；(ii) by poly- naphthalenedicarboxylic acid ethylene glycol
The solidification bonding agent being retained in after ester device substrate and silicon carrier substrate unsticking on silicon carrier substrate, wherein having deducted silicon carrier
The frequency spectrum of substrate；And the first poly- naphthalenedicarboxylic acid that (iii) is processed on the silicon carrier substrate with non-crystalline silicon bonding modified layer
Glycol ester (PEN) device substrate, wherein by PEN (PEN) device substrate and silicon carrier substrate point
From, and deducted the frequency spectrum of the second PEN (PEN) device substrate.
For the simplicity and clarity of diagram, accompanying drawing illustrates overall make, and can omit many institute's weeks
The description of the feature and technology known and details are avoiding unnecessarily obscuring the present invention.In addition, the element in accompanying drawing is not necessarily
It is drawn to scale.For example, the size of some elements in figure can be exaggerated right to help improve relative to other elements
The understanding of embodiments of the invention.Same reference numbers in different figures represent identical element.
Term " first ", " second ", " the 3rd ", " 4th " in specification and claims etc. (if any) use
In the similar element of differentiation, and not necessarily for the specific sequence of description or time sequencing.It should be appreciated that this for so using
A little terms can be in a suitable case exchange so that embodiment described here for example can according to different from
This is shown or those described otherwise above are sequentially operating.Additionally, term " comprising " and " having " and its is any
Version is intended to cover including for nonexcludability, so that a series of process, method, system, article, the device including elements
Part or equipment are not necessarily limited by those elements, and can be including clearly do not list or be not this class process, method, system,
The intrinsic other elements of article, device or equipment.
"left", "right", "front", "rear", " top ", " bottom " in specification and claims, " on ", the art such as D score
Language (if any) is for descriptive purposes and not necessarily for the permanent relative position of description.It should be appreciated that so making
These terms are in a suitable case interchangeable, so that the embodiment of invention described herein for example can
It is being different from being operated on those directions shown at this or described otherwise above.
Term " connection (couple) ", " connection (coupled) ", " connection (couples) ", " connection (coupling) " etc.
Should be understood broadly and refer to and electrically, mechanically and/or otherwise connect two or more elements or signal
Pick up and.Two or more electrical equipments can electrically couple but cannot mechanically or otherwise couple；Two
Or more mechanical organs can be mechanically coupled to but cannot electrically or otherwise couple；Two or more are electric
Element can be mechanically coupled to but cannot electrically or otherwise couple.Connection can continue any time length, example
Such as, it is permanent or semipermanent or only a moment.
" electrically connection " etc. should be understood broadly and including the connection for being related to any signal of telecommunication, either power letter
Number, other types or the combination of data signal, and/or the signal of telecommunication." mechanical attachment " etc. should be understood broadly and including institute
There is the mechanical attachment of type.
Lack the word such as " removably ", " dismountable " near words such as " connections " and do not mean that discussed connection
It is dismountable Deng yes or no.
As used in this term " bowing (bowing) " means substrate around mesien curvature, and the mesion is parallel
In the top surface and bottom surface or major surfaces of substrate.As used in this term " warpage (warping) " means the surface of substrate
Relative to the linear displacement of z-axis, top surface and bottom surface or major surfaces of the z-axis perpendicular to substrate.Term as used in this
" deformation (distortion) " means substrate in plane (i.e. x-y plane, top surface and bottom surface or main of the plane parallel to substrate
Surface) in displacement.For example, deformation can be included in the contraction in the x-y plane of substrate and/or in the x-y plane of substrate
Expansion.
As used in this term " CTE match material " etc. means the thermal coefficient of expansion (CTE) for having with reference material
Material of the difference less than the CTE of about percent 20 (%).Preferably, CTE differences are less than about 10%, 5%, 3% or 1%.
As used in this term " flexible substrate " means the individual substrate being easily adapted to its shape.Accordingly
Ground, in many examples, flexible substrate can include flexible material (for example, being made from it), and/or can include sufficiently thin
Thickness (for example, average thickness) so that substrate is easily adapted to shape.It is flexible in these or other embodiment
Material also refers to the material with low elastic modulus.Further, low elastic modulus also refer to lucky less than about five
The elastic modelling quantity of Pascal (GPa).In certain embodiments, as because sufficiently thin so that it is easily fitted to shape
The substrate of the flexible substrate matched somebody with somebody can not be flexible substrate if implementing with bigger thickness, and/or the substrate can have
More than the elastic modelling quantity of five GPa.For example, but elastic modelling quantity can be more than or equal to about five GPa less than or equal to about 20
GPa, 50 GPa, 70 GPa or 80 GPa.In certain embodiments, for because sufficiently thin so that it easily enters to shape
Can not be if row adaptation is so as to be flexible substrate but with bigger thickness enforcement the exemplary material of the substrate of flexible substrate
Material can include some glass (for example, fluorine by manufactured by Corning Incorporated of Corning, NY USA city (Corning Inc.) etc.
Silicate glass, Pyrex, healthy and free from worry (Corning)Glass, WillowTMGlass, and/or Vitrelle glass etc.) or tool
There is the silicon for being more than or equal to about 25 microns and the thickness less than or equal to about 100 microns.
Meanwhile, term " rigid substrate " as used in this can mean the independence for being not easy to be adapted to its shape
Substrate and/or be not flexible substrate substrate.In certain embodiments, rigid substrate can be without flexible material and/or can be with
Including the material of the elastic modelling quantity with the elastic modelling quantity more than flexible substrate.In embodiments, rigid substrate can be with foot
It is enough thick so that substrate is not easy the thickness that is adapted to its shape to implement.In these or other example, by increasing
The rigid increase of the carrier substrates that the thickness of adding carrier substrate is provided can pair with by increase carrier substrates thickness institute
The cost of offer and the increase of weight balance each other.
As used in this, " polishing " can mean to be ground surface and polish or be only ground surface.
Specific embodiment
Some embodiments include a kind of method.This method can include：Carrier substrates are provided；Above carry in the carrier substrates
For bonding modified layer；Device substrate is provided；And be linked together the device substrate with the carrier substrates, when the device substrate
When being linked together with the carrier substrates, the bonding modified layer is located between the device substrate and the carrier substrates.In these realities
In applying example, the bonding modified layer may be configured so that the device substrate by the first bonding force by means of the bonding modified layer
Couple indirectly with the carrier substrates, first bonding force be more than in the case of the not bonding modified layer device substrate with
The carrier substrates are connected the second bonding force used.
Other embodiment includes a kind of method.This method can include：Carrier substrates are provided；Above carry in the carrier substrates
For bonding modified layer；Bonding agent is provided；Device substrate is provided, the device substrate includes first surface and relative with the first surface
Second surface；The first surface of the device substrate and the carrier substrates are linked together with the bonding agent, when the device
When the first surface of substrate is linked together with the carrier substrates, the bonding modified layer is located at first table of the device substrate
Between face and the carrier substrates；After the first surface of the device substrate and the carrier substrates are linked together, by this
Device substrate provides one or more while being linked together with the carrier substrates on the second surface of the device substrate
Semiconductor element；And provide on the second surface of the device substrate after one or more semiconductor elements, by the device
The first surface of part substrate is mechanically decoupled with the carrier substrates, so that the bonding agent does not surpass after being newly disengaged
Cross 5% to be retained on the first surface of the device substrate.
Further embodiment includes a kind of method.This method can include：Carrier substrates, the carrier substrates bag are provided
Include first surface and the second surface relative with the first surface；There is provided device substrate, the device substrate include first surface and
The second surface relative with the first surface；At least a portion of the second surface of the carrier substrates is processed, to increase the device
The first surface of part substrate is attached to power used at least a portion of the second surface of the carrier substrates；And should
The first surface of device substrate is linked together with the second surface of the carrier substrates.
Accompanying drawing is gone to, Fig. 1 illustrates the flow chart of the embodiment of method 100.Method 100 is only exemplary being not limited to
In the embodiment that this is shown.Method 100 can apply non-here specifically describe or many different embodiment that describes or
In example.In some embodiments it is possible to carry out the activity of method 100 with the order for being shown.In other embodiments, can be with
The activity of method 100 is suitably sequentially carried out with any other.In still other embodiments, can combine or skipping method 100
In activity in one or more it is movable.
In many examples, method 100 can include a kind of method for providing (for example, manufacture) electronic device.Although
Electronic device can include any suitable electronic device, but in many examples, electronic device can include electronical display
Device, X ray sensor, biosensor, battery etc..In general, when provide on the device substrate one of electronic device or
During multiple semiconductor elements, the device substrate of electronic device is attached in carrier substrates can conveniently provide electronic device.Example
Such as, in certain embodiments, when device substrate includes flexible substrate and carrier substrates include rigid substrate, by electronic device
Device substrate be connected in carrier substrates and can allow partly to be led using be configured for being processed in rigid substrate
Body manufacture infrastructure provide on the device substrate the semiconductor element of electronic device.In many examples, in device substrate
After upper offer semiconductor element, method 100 can be allowed device substrate and carrier substrates so that electronic device is mitigated or eliminated
On the mode of defect separate, as here is discussed in more detail.
For example, method 100 can include providing the activity 101 of carrier substrates.Fig. 2 illustrates the embodiment according to Fig. 1
Example activity 101.
In many examples, activity 101 can include providing the activity 201 of carrier substrates.Carrier substrates can include
First surface and the second surface relative with the first surface.Carrier substrates are configured for coupling device substrate
Bowing, warpage, and/or the deformation of device substrate are minimized during in carrier substrates and bonding modified layer, as mentioned below.
Correspondingly, in many examples, carrier substrates can include rigid substrate.Carrier substrates (for example, rigidity lining
Bottom) any suitable material of the characteristic with rigid substrate as defined above can be included.Specifically, exemplary materials
Aluminum (Al2O3), silicon, glass (for example, barium borosilicate glass, soda lime glass and/or aqueous alkali glass), gold can be included
Category, metal alloy (for example, steel, such as rustless steel), and/or sapphire.However, in certain embodiments, carrier substrates (example
Such as, rigid substrate) can be without silicon and/or non-crystalline silicon.Meanwhile, in many examples, glass can include low CTE glass.
Further, it is also an option that being used for the material of carrier substrates (for example, rigid substrate), so that material
CTE substantially matches with the CTE of device substrate and/or the material of bonding modified layer, and each in these is carried out above
Simply introduce and description in further detail below.Equally, in certain embodiments, for device substrate and/or
The material of bonding modified layer can be selected to CTE and match with the material of carrier substrates, and/or in match with one another.It is non-matching
CTE can produce stress between carrier substrates, device substrate and/or bonding modified layer.
Equally, in many examples, carrier substrates can be chip or panel.Carrier substrates (for example, chip or face
Plate) can include it is any suitably sized.For example, carrier substrates (for example, chip or panel) can include it is any it is suitable most
Large scale (for example, diameter), such as about 6 inches (about 15.24 centimetres), about 8 inches (about 20.32 centimetres), big
About 12 inches (about 30.48 centimetres) or about 18 inches (about 45.72 centimetres).In certain embodiments, carrier substrates can
It is multiplied by about 470 millimeters, about 400 millimeters and is multiplied by about 500 millimeters, about 620 millimeters and be multiplied by about is about 370 millimeters
750 millimeters, about 730 millimeters are multiplied by about 920 millimeters, about 1,000 millimeters and are multiplied by about 1,200 millimeters, about 1,000 millis
Rice is multiplied by about 1,300 millimeters, about 1,300 millimeters and is multiplied by about 1,500 millimeters, about 1,500 millimeters and is multiplied by about 1,850
Millimeter, about 1,870 millimeters be multiplied by about 2,200 millimeters, about 1,950 millimeters be multiplied by about 2,250 millimeters, about 2,160
Millimeter is multiplied by about 2,460 millimeters, about 2,200 millimeters and is multiplied by about 2,500 millimeters, about 2,880 millimeters and is multiplied by about 3,
130 millimeters of panel.In certain embodiments, carrier substrates (for example, chip or panel) can include certain carrier substrates
Thickness.Carrier substrates thickness also refers to be approximately perpendicular to what is measured on the direction on the first and second surfaces of carrier substrates
The size of carrier substrates.For example, carrier substrates thickness can be more than or equal to about 300 microns and less than or equal to about 2 millimeters.
In these or other embodiment, carrier substrates thickness can be more than or equal to about 0.5 millimeter.In many examples, carrier
Substrate thickness can be constant.
Subsequently, in certain embodiments, activity 101 can include the activity 202 of cleaning carrier substrates.In some embodiments
In, activity 202 can be carried out as follows：Using plasma (for example, oxygen plasma) or using ultrasonic bath cleaning carrier lining
Bottom.
Then, activity 101 can include the activity that the first surface to carrier substrates and/or second surface are polished
203.As mentioned below, to the surface without subsequently connection (for example, bonding) to the carrier substrates in bonding modified layer (for example,
First surface) it is polished the ability that improve vacuum chuck or air spider operation carrier substrates.Equally, as mentioned below,
Subsequently connection (for example, bonding) is polished to the surface (for example, second surface) of the carrier substrates in bonding modified layer
Except the topological characteristic on that surface of carrier substrates, these topological characteristics are likely to result in by device substrate and carrier substrates
Roughness of the device substrate component produced by after being coupled together in z-axis.
Next, returning to Fig. 1, method 100 can be included at least a portion of carrier substrates, such as in carrier
The activity 102 of bonding modified layer is provided at least a portion (for example, all) of the second surface of substrate.Image carrier substrate one
Sample, bonding modified layer can include first surface and the second surface relative with the first surface.In these embodiments, bonding
The first surface of modified layer may be located near the second surface of carrier substrates.
As explained below, in embodiments, bonding modified layer can (that is, first glues including using bonding force
Device substrate being adhered to joint efforts) and/or is adhered to, device substrate is adhered on the bonding agent of bonding modified layer (following article institute
State) any suitable material (for example, non-crystalline silicon, silicon nitride, silicon dioxide, and/or 3- methacryloxypropyl front threes
TMOS etc.), bonding force of the bonding force more than carrier substrates and device substrate and/or directly between bonding agent (that is, the
Two bonding forces).Therefore, bonding modified layer can be operated as intermediate layer, and intermediate layer is configured so that device substrate passes through
Bonding modified layer with the case of than no bonding modified layer will likely the bigger bonding force of bonding force directly serve as a contrast with carrier
Bottom is connected.Correspondingly, in some examples, activity 102 can be carried out as a part for following activity：Carrier is served as a contrast
At least a portion of the second surface at bottom is processed, be connected to carrier substrates with the first surface for increasing device substrate second
Power used (that is, the second bonding force) (that is, increasing to the first bonding force) at least a portion on surface.Fig. 3 illustrates basis
The example activity 102 of the embodiment of Fig. 1.
Activity 102 can be included at least a portion of carrier substrates (such as the second surface in carrier substrates
At least partially (for example, all) activity 301 of bonding modified layer is deposited on).In other embodiments, activity 301 can be by
The activity deposited to the bonding modified layer at the first surface of device substrate is substituting.In arbitrary implementation, can
To be deposited by chemical vapor deposition (for example, plasma enhanced chemical vapor deposition).For example, in many embodiments
In, can at one or more predetermined carrier substrates (for example, at least a portion of the second surface of carrier substrates or
It is whole or substantially all) on deposit bonding modified layer.The exemplary condition of deposition can include the pressure of about 0.267kPa, big
The power density of about 170mW/cm2, the silane flow rate of about 100 sccms, about 3000 standard cubes li
Rice hydrogen flowing quantity per minute and about 2.44 centimetres of pedestal interval.
Bonding modified layer can be provided (for example, deposit) into including certain thickness and (that is, provide viscous in carrier substrates
The size of the bonding modified layer of the second surface of carrier substrates is approximately perpendicular to when connecing modified layer).In many examples, across load
The thickness of the second surface of body substrate can be constant.In certain embodiments, the thickness can be more than or equal to about
0.05 micron and less than or equal to about 25 microns, such as about 0.3 micron.In general, thickness can be chosen to foot
Reach thick to guarantee continuous distribution of the bonding modified layer in carrier substrates.Further, while carrier substrates are still allowed for,
Thickness can be chosen to as thin as possible so as to minimum when being connected to device substrate in carrier substrates and/or bonding modified layer
Change bowing, warpage, and/or the deformation of device substrate, as mentioned below.
In certain embodiments, (for example, bonding is modified at least a portion that activity 102 can be included in bonding modified layer
Layer second surface at least a portion) on pattern mask (for example, photoresist) activity 302.Mask can cover bonding
One or more parts being not etched by of modified layer.For example, during activity 303 as mentioned below, can be in bonding
Pattern mask on the peripheral part of the second surface of modified layer, so that the middle body of the second surface of bonding modified layer is sudden and violent
Expose.
In these embodiments, the peripheral part of carrier substrates also refer to the second surface of carrier substrates positioned at load
A part between the edge of body substrate and the periphery of carrier substrates.Periphery also refers to be located at the second surface of carrier substrates
At the edge preset distance of carrier substrates with continuing reference to line.Preset distance can be chosen to as little so as to maximum as possible
Change the device for semiconductor device build surface it is simultaneously sufficiently large with corresponding to carrier surface by the system of semiconductor device
Those parts operated during making.Meanwhile, the middle body of bonding modified layer also refers to the second surface of carrier substrates
Corresponding to for semiconductor device device build surface remainder.
Mask can equipped with certain thickness so that mask will not during activity 303 as described below quilt
Etching is worn.In certain embodiments, mask can have can be more than or equal to about 2.5 microns and less than or equal to about 5.0
The thickness of micron, such as about 3.5 microns.
In some embodiments it is possible to carry out activity 302 by coating the second surface of bonding modified layer with photoresist.
Next, bonding modified layer can with template alignment, and photoresist can be exposed under ultraviolet with by mask images from mould
Plate is delivered on photoresist.After transmission mask images, photoresist can be toasted.It is then possible to be shown by using conventional
Shadow chemicalss come remove photoresist due to template without being exposed to ultraviolet under part come the mask that develops.
Next, activity 102 can include losing bonding modified layer (for example, the non-masking part of bonding modified layer)
The activity 303 at quarter.In many examples, can be carried out by carrying out reactive ion etching or wet etching to bonding modified layer
Activity 303.In some examples, bonding can be etched with buffered oxide etchant, chlorine based etchant or fluorine-based chemistry to change
Property layer.
Meanwhile, after activity 303, activity 102 can include removing the activity 304 of mask.In some examples, can be with
By using including one or more solvent (such as acetone, n- methyl pyrrolidones, aminopropyl morpholine, dimethyl sulfoxide, ammonia third
Alcohol, and/or sulfolane etc.) solvent etching dissolving mask come carry out activity 304.In these or other example, can be 70
DEG C carry out solvent etching using static bath, recirculation bath or Bracewell coater.Then, with the remainder of bonding modified layer
The carrier substrates divided can be rinsed using deionized water and can be dried by Rotary drying or air knife.In some examples,
Can be rinsed in quick tipping bucket irrigator, and can be dried in spin rinse exsiccator.
In many examples, it is convenient to omit activity 302 to 304.In certain embodiments, if carry out activity 302 to
304 can depend on being implemented for the material of device substrate, as mentioned below.For example, when device substrate includes polyimides
When, it may be desirable to carry out activity 302 to 304.Meanwhile, when device substrate includes PEN, it may be desirable to
Omission activity 302 to 304.
Activity 102 can include the activity 305 being cleaned to the carrier substrates of the remainder with bonding modified layer.
Activity 305 can be carried out as follows：The carrier substrates of the remainder with bonding modified layer are rinsed using deionized water
And Rotary drying is carried out to the carrier substrates of the remainder with bonding modified layer.In some examples, can be quick
It is rinsed in tipping bucket irrigator, and can be dried in spin rinse exsiccator.In some embodiments it is possible to will
Activity 305 is omitted or carried out as a part for activity 304.
Further, activity 102 can include being etched the carrier substrates of the remainder with bonding modified layer
The activity 306 of (for example, being ashed).Activity 306 can be carried out with oxygen plasma etch.In certain embodiments, oxygen etc. from
Daughter etching can be carried out 90 minutes under the pressure of about 1200mTorr (support).In some embodiments it is possible to omit activity
306。
In the accompanying drawings temporarily to forward, Fig. 4 is illustrated and bonding modified layer is provided in carrier substrates 401 according to embodiment
The partial cross section view of the semiconductor device 400 after 402.Semiconductor device 400 can be with the quasiconductor of method 100 (Fig. 1)
Device is similar or identical.Further, carrier substrates 401 and/or bonding modified layer 402 (can be schemed respectively with method 100
1) carrier substrates and/or bonding modified layer are similar or identical.Correspondingly, carrier substrates 401 can include first surface
403 and the second surface 404 relative with first surface 403.Equally, bonding modified layer 402 can include first surface 405 and with
The relative second surface 406 of first surface 405.
Meanwhile, Fig. 5 illustrates the partial cross section view of the semiconductor device 500 according to embodiment.Semiconductor device 500 can
With similar or identical with semiconductor device 400, it is removed except the middle body of bonding modified layer 502 has passed through etching
To leave the peripheral part 508 of bonding modified layer 502 and expose beyond carrier substrates 501.Carrier substrates 501 can be with load
The carrier substrates of body substrate 401 (Fig. 4) and/or method 100 (Fig. 1) are similar or identical；Bonding modified layer 502 can with it is viscous
The bonding modified layer for connecing modified layer 402 (Fig. 4) and/or method 100 (Fig. 1) is similar or identical；And middle body 507
And/or peripheral part 508 can be similar to respectively with the middle body and/or peripheral part of the bonding modified layer of method 100 (Fig. 1)
Or it is identical.Correspondingly, carrier substrates 501 can include first surface 503 and the second surface relative with first surface 503
504.Equally, bonding modified layer 502 can include first surface 505 and the second surface 506 relative with first surface 505.
Referring back now to Fig. 1, method 100 can include providing the activity 103 of device substrate.Image carrier substrate is the same,
Device substrate can include first surface and the second surface relative with the first surface.
In many examples, device substrate can include flexible substrate.Device substrate (for example, flexible substrate) can be wrapped
Include any suitable material of those characteristics with flexible substrate as defined above.Specifically, exemplary materials can be with
It is common including PEN, polyethylene terephthalate, polyether sulfone, polyimides, Merlon, cycloolefins
Polymers, liquid crystal polymer, any other suitable polymer, glass are (such as the Corning Incorporated by Corning, NY USA city
Fluorosilicate glass, Pyrex, healthy and free from worry (Corning) manufactured by (Corning Inc.) etc.Glass, WillowTMGlass
Glass, and/or Vitrelle glass etc.), metal forming (for example, aluminium foil etc.) etc..
In certain embodiments, activity 103 can be carried out as follows：Device substrate is provided.In other embodiments, activity
103 can be carried out as follows：Deposit in carrier substrates and in bonding modified layer (for example, in the second surface of bonding modified layer)
Device substrate, such as a part for activity 701 (Fig. 7) as mentioned below.
Further, in certain embodiments, method 100 can include such as (i) changes in carrier substrates and in bonding
In property layer (for example, in the second surface of bonding modified layer) and/or (ii) provides bonding agent on the first surface of device substrate
Activity 104.Bonding agent can include be configured for than be adhered to bonding force bigger in carrier substrates be adhered to it is viscous
Connect any material in modified layer.In many examples, bonding agent can include acrylate polymer bonding agent.In some realities
In applying example, it is convenient to omit activity 104, such as when movable 701 (Fig. 7) is carried out.
In embodiments, activity 104 can be carried out as follows：In bonding modified layer (for example, the second of bonding modified layer
Surface) on and/or device substrate first surface deposit bonding agent, such as by rotary coating, spraying, extrusion coated,
Preforming lamination, slit-type die coating are covered, silk screen lamination, silk screen printing and/or vapour phase linging.In these or other embodiment,
At one or more predetermined bonding agent can be deposited on into bonding modified layer (for example, in the second table of bonding modified layer
Face) on and/or the first surface of device substrate at.
In specific example, there can be bonding modified layer in the speed of rotation rotation first with about 1000 rpms
The carrier substrates time of about 25 seconds while deposit bonding agent.Then, with about 3,500 rpms of the speed of rotation
Can keep in certain hour (for example, about 10 seconds) before the rotating carrier substrate and bonding modified layer time of about 20 seconds
Carrier substrates and bonding modified layer are static.
In the accompanying drawings to forward, Fig. 6 illustrates the in carrier substrates 401 and modified in bonding of the embodiment according to Fig. 4
Semiconductor device 400 on 402 (for example, in the second surface 406 of bonding modified layer 402) of layer after offer bonding agent 609
Partial cross section view.
Fig. 1 is turned again to, method 100 can include the activity 105 for being coupled together device substrate and carrier substrates.
In these embodiments, activity 105 can be carried out, so that when device substrate and carrier substrates are linked together, bonding changes
Property layer be located between device substrate and carrier substrates.Correspondingly, in many examples, can be in activity 102 and/or activity
Activity 105 is carried out after 301 (Fig. 3).Fig. 7 illustrates the example activity 105 of the embodiment according to Fig. 1.
In certain embodiments, activity 105 can include the activity being directly bonded to device substrate in bonding modified layer
701.Fig. 8 illustrates the example activity 701 of the embodiment according to Fig. 7.
Activity 701 can be included in deposition device lining in bonding modified layer (for example, in the second surface of bonding modified layer)
The activity 801 at bottom, such as being covered by rotary coating, spraying, extrusion coated, preforming lamination, slit-type die coating, silk screen layer
Pressure, silk screen printing and/or vapour phase linging.In these or other embodiment, can at one or more predetermined by device
Part substrate deposition is in bonding modified layer (for example, in the second surface of bonding modified layer).
In certain embodiments, these predetermined conditions can depend on desired device substrate thickness, and following article is begged for
By.In specific example, can more than or equal to about 10 seconds and in time less than or equal to about 100 seconds with more than etc.
It is heavy while speed of rotation rotating carrier substrate in about 500 rpms and less than or equal to about 6,000 rpms
Product device substrate.For example, the speed of rotation can be about 1,000 rpm, and/or the time can be about 25 seconds.
In many examples, activity 701 can be included in bonding modified layer (for example, in the second table of bonding modified layer
Face) on curing substrate activity 802.For example, solidification can be dried first by the hot plate at about 90 DEG C to about 150 DEG C
Bake about 10 minutes, then conventional ovens toast about one hour to carry out at about 220 DEG C.In many examples, it is living
Dynamic 802 to can aid in the chemical substance removed from device substrate for carrying out activity 801 as above (for example, molten
Agent).In these or other embodiment, activity 802 can aid in and device substrate is adhered in bonding modified layer.Such as institute's phase
Hope, device substrate can be heat cure and/or photocuring.In some embodiments it is possible to the activity of omitting 802.
In the accompanying drawings temporarily to forward, Fig. 9 illustrates directly the bonding device substrate 910 of the embodiment according to Fig. 5
The partial cross section view of the semiconductor device 500 after in bonding modified layer 502 and in carrier substrates 501.Device substrate
910 can be similar or identical with above for the device substrate described in method 100 (Fig. 1).Correspondingly, device substrate 910
First surface 911 and the second surface 912 relative with first surface 911 can be included.First surface 911 can be with method 100
(Fig. 1) first surface of device substrate is similar or identical, and second surface 912 can be with the device of method 100 (Fig. 1)
The second surface of part substrate is similar or identical.
Fig. 7 is now turned to, in other embodiments, activity 105 can include being adhered to device substrate with bonding agent viscous
Connect the activity 702 in modified layer.Correspondingly, when with movable 702 implementation 100,104 (Fig. 1) of activity are carried out.Merit attention
, in many examples, when carrying out movable 701, it is convenient to omit activity 702, and vice versa.Figure 10 illustrates root
According to the example activity 702 of the embodiment of Fig. 7.
In certain embodiments, activity 702 can include the activity 1001 of baking device substrate.Implement these or other
In example, device substrate can be at one or more predetermined toasted.In many examples, can be under vacuum
And/or more than or equal to about 100 DEG C and less than or equal to about 200 DEG C at a temperature of toast device substrate.In general, can be with
Activity 1001 was carried out before activity 1002 to 1006.In some embodiments it is possible to the activity of omitting 1001.
In many examples, activity 702 can be included in the activity of the second surface offer protective layer of device substrate
1002.In many examples, protective layer (for example, can partly be led including adhesive tape by California, USA mole Parker city
Production number manufactured by body equipment company (Semiconductor Equipment Corporation) is the indigo plant of 18133-7.50
The low adhesive tape of color (Blue Low Tack Squares)).Carrying out activity 802 can prevent from carrying out activity as described below
When 1003 the second surface of device substrate is caused to damage and/or polluted.
After activity 1002, activity 702 can proceed for the first surface of device substrate to be adhered to bonding and be modified
Activity 1003 on the second surface of layer.Can be lived using any suitable lamination (for example, roll-in, bag pressure etc.)
Dynamic 1003.In many examples, activity 1003 can at one or more predetermined be carried out.In many examples, can
With under more than or equal to about 34kPa and pressure less than or equal to 207kPa, more than or equal to about 80 DEG C and less than etc.
Activity 1003 is carried out at a temperature of about 140 DEG C, and/or under about 0.45 meter of feed rate per minute.
For example, can be more than or equal to about 0 kPa (i.e., in a vacuum) and pressure less than or equal to about 150 kPas
The first surface of device substrate is adhered on the second surface of bonding modified layer under power.In certain embodiments, pressure can be with
Including about 138 kPas.Further, in other embodiments, can be with per minute and be less than more than or equal to about 0.1 meter
Equal to the second surface that the first surface of device substrate is adhered to about 1.0 meters of feed rates per minute bonding modified layer.
In certain embodiments, feed rate can be per minute including 0.46 meter.Also it is possible to further more than or equal to about 20 DEG C
And less than or equal at a temperature of about 100 DEG C, 160 DEG C, 220 DEG C, 350 DEG C etc. the material of device substrate (depend on) by device
The first surface of substrate is adhered on the second surface of bonding modified layer.For example, temperature is including poly- naphthalene diformazan when device substrate
Can be less than or equal to about 220 DEG C (for example, about 100 DEG C), when device substrate is including poly- terephthaldehyde during sour glycol ester
Less than or equal to about 160 DEG C (for example, about 100 DEG C) and polyether sulfone can included when device substrate during sour glycol ester
When can be less than or equal to about 350 DEG C (for example, about 100 DEG C).
Activity is carried out suitable for solidifying any technology (for example, photocuring, heat cure, pressure-cure etc.) of bonding agent
1004, and carrier substrates, bonding modified layer or device substrate are damaged invariably.For example, in certain embodiments, activity 1005 can be with
It is carried out as follows：Such as using Dai Mashi companies (Dymax Corporation) institute by Connecticut, USA Tuo Lingdun cities
The Dai Mashi ultraviolet (UV) curing systems (Dymax ultraviolet cure system) of manufacture carry out ultraviolet to bonding agent and consolidate
Change.In these embodiments, activity 1004 can carry out about 20 seconds to about 180 seconds.In other embodiments, activity 1004
Can be carried out as follows：In baking oven (such as the U.S. refined Ma Tuo (Yamato) section by Santa Clara City, California, America
Refined horse manufactured by skill limited company opens up baking oven) middle baking bonding agent.
After activity 1003 and/or activity 1004, activity 702 can include removing the viscous of surplus from semiconductor device
Connect the activity 1005 of agent.In certain embodiments, activity 1005 can be carried out as follows：Using plasma (for example, oxygen plasma
Body) or clean carrier substrates using ultrasonic bath.
After activity 1003, activity 702 can include removing the activity of the protective layer at the second surface of device substrate
1006.In some embodiments it is possible to the activity of omitting 1002 and 1005.In embodiments, can be using activity 1006 as work
Dynamic 1005 part is carrying out.
In the accompanying drawings to forward, Figure 11 illustrate the embodiment according to Fig. 4 with bonding agent 609 by device substrate 1110
The office of the semiconductor device 400 after being adhered in bonding modified layer 402 and device substrate being bonded in carrier substrates 401
Cross section figure.Device substrate 1110 can be with device substrate 910 and/or above for the device described by method 100 (Fig. 1)
Substrate is similar or identical.Correspondingly, device substrate 1010 can include first surface 1111 and with the phase of first surface 1111
To second surface 1112.First surface 1111 can be served as a contrast with the device of first surface 911 (Fig. 9) and/or method 100 (Fig. 1)
The first surface at bottom is similar or identical, and second surface 912 can be with second surface 912 (Fig. 9) and/or method 100
(Fig. 1) second surface of device substrate is similar or identical.
Fig. 1 is again returned to now, either according to 701 (Fig. 7) of activity or movable 702 (Fig. 7) implementations 100, device
Part substrate can be provided as including certain device substrate thickness (that is, the device substrate on carrier substrates or bonding agent
Size, if applicable, the size is approximately perpendicular to carrier substrates or bonding when device substrate is connected in carrier substrates
Agent).It should be noted that for reference purposes, the calculating of device substrate thickness does not include ought by bonding modified layer
Part of the device substrate on the peripheral part of bonding modified layer when centre part removes, will be thicker than device substrate along the part
The little amount for being approximately equal to bonding modified layer thickness of degree.In many examples, device substrate thickness can be constant.Together
Sample, the thickness of part of the device substrate on the peripheral part of bonding modified layer can also be constant.In some enforcements
In example, carrier substrates thickness can be more than or equal to about 1 micron and less than or equal to about 1 millimeter.For example, device substrate thickness
It can be about 20 microns.In general, device substrate thickness can be chosen to sufficiently thick to guarantee device substrate in carrier
Continuous distribution on substrate.Further, while above content is still allowed for, device substrate thickness can be chosen to the greatest extent
May be thin so as to the bowing, warpage, and/or the deformation that minimize device substrate when device substrate is connected in carrier substrates.
After activity 105, method 100 can be included in while device substrate is attached in carrier substrates to device
The activity 106 that substrate is solidified.As expected, device substrate can be heat cure and/or photocuring.For example, exist
In many embodiments, it is possible, firstly, to first under vacuum, more than or equal to about 100 DEG C and less than or equal to about 235
At a temperature of DEG C, and/or device substrate is being entered more than or equal to about 1 hour and in time less than or equal to about 8 hours
Row heat cure.For example, temperature can include about 180 DEG C or 220 DEG C, and/or the time can include about 3 hours.
Next, method 100 can be included in while device substrate is attached in carrier substrates on the device substrate
The activity 107 of one or more semiconductor elements is provided.In some embodiments it is possible to according to the temperature without departing from 200 DEG C
Any conventional semiconductor manufacturing process provides on the device substrate semiconductor element.In a further embodiment, can basis
Any conventional semiconductor manufacturing process of the temperature without departing from 235 DEG C provides on the device substrate semiconductor element.For example, each
In embodiment, quasiconductor can be on the device substrate provided according to the semiconductor fabrication process described in following patent application
Element：I () discloses serial number US 20120061672 in the U.S. Patent Application Publication of on March 15th, 2012, (ii) in 2012
International Patent Application Publication serial number WO 20121381903 disclosed on October 11, in, and/or (iii) was on June 6th, 2013
Disclosed International Patent Application Publication serial number WO 2013082138, each of these patent applications patent application it is complete
Portion's content all will be incorporated herein by reference.In some embodiments it is possible to carry out activity 107 after activity 105.Further
Ground, can carry out activity 107 before activity 108 and/or activity 110.Figure 12 illustrate the embodiment according to Fig. 4 in device
The partial cross section view of the semiconductor device 400 after one or more semiconductor elements 1213 is provided on substrate 1110；And
Figure 13 illustrates the providing in device substrate 910 after one or more semiconductor elements 1313 of the embodiment according to Fig. 5
The partial cross section view of semiconductor device 500.
Referring again to Fig. 1, in certain embodiments, method 100 can be included the device portions and device of device substrate
The activity 108 of the non-device partial cut of substrate (for example, is served as a contrast above with respect to the carrier that peripheral part and middle body are discussed
On position in the periphery at bottom).The non-device part of device substrate can be adhered in bonding modified layer.Meanwhile, can be by
The device portions of device substrate are only adhered in carrier substrates.Device portions include at least a portion of semiconductor element.At certain
In a little embodiments, non-device part can include a part for semiconductor element.Any suitable cutting tool (example can be used
Such as, blade, laser instrument etc.) by the device portions of device substrate and the non-device partial cut of device substrate.In many embodiments
In, activity 108 can be carried out, so that when movable 110 (hereafter) is carried out, some or all and device of semiconductor element
The device portions of substrate keep together and (for example, leave the non-device part of semiconductor element and device substrate as few as possible
Together).In many examples, activity 108 can occur after activity 107.Further, activity 108 can occur
Before activity 110.
In some embodiments it is possible to the activity of omitting 108, such as when with movable 702 (Fig. 7) implementation 100.
In many embodiments, in method 100 is implemented to include 302 to 304 (Fig. 3) of 701 (Fig. 7) of activity and/or activity
Or when multiple movable, method 100 can also include activity 108.Figure 14 illustrate the embodiment according to Fig. 5 by device substrate
The local of the semiconductor device 500 after 910 device portions 1414 and the cut-out of non-device part 1415 of device substrate 910 is horizontal
Sectional view.
Referring again to Fig. 1, in certain embodiments, method 100 can include reducing the first bonding force or the second bonding force
At least one of bonding force activity 109.In these embodiments, activity 109 can be carried out as follows：To bonding agent or bonding
Modified layer carries out chemical treatment, Electromagnetic Treatment (for example, by the electromagnetic radiation of ultraviolet or other forms, such as laser electricity
Magnetic radiation) or heat treatment (for example, using laser send electronics modeling (EPLaRTM), using laser annealing/erosion surface release
Technology (SUFTLATM) etc.).
In many examples, it is convenient to omit activity 109.When using movable 109 implementation 100, activity 110 it
Before carry out activity 109, as mentioned below.In certain embodiments, activity 109 can occur after activity 108, otherwise or
It is as the same.
Next, method 100 can be included device substrate (or in where applicable, device portions of device substrate) and carrier
Substrate separates activity 110 (for example, mechanically).Figure 15 illustrate the embodiment according to Fig. 4 provide semiconductor element
The device of the semiconductor element 400 after 1213 and after device substrate 1110 is separated with carrier substrates 401 (Fig. 4) is served as a contrast
The cross-sectional view at bottom 1110；And Figure 16 illustrate the embodiment according to Fig. 5 provide semiconductor element 1313 after and
The device of the device substrate 910 of the semiconductor element 500 after device portions 1414 are separated with carrier substrates 501 (Fig. 5)
The cross-sectional view of part 1414.
In many examples, activity 110 can be carried out as follows：To device substrate (or in where applicable, the device of device substrate
Part part) apply release force (for example, stable release force).In many examples, if applicable, can be by from viscous
Connect and peel off (for example, with handss) in modified layer and/or carrier substrates device substrate (or in where applicable, device portions of device substrate)
To apply release force to device substrate (or in where applicable, device portions of device substrate).In these or other embodiment, such as
Fruit be suitable for if, can by under device substrate (or in where applicable, device portions of device substrate) insert blade and
Away from the direction of bonding modified layer and/or carrier substrates on the device substrate pressing (or in where applicable, the device of device substrate
Part) (or enhancing) release force applying.
Further, in these or other embodiment, activity 110 can be carried out as follows：Such as using any suitable
Cutting tool (for example, blade, laser instrument etc.) by device substrate (or in where applicable, device portions of device substrate) with it is bonding
Modified layer and/or carrier substrates are cut off.By device substrate (or in where applicable, device portions of device substrate) and bonding modified layer
And/or carrier substrates cut-out can be substituted to device substrate (or in where applicable, device portions of device substrate) and apply release force
Activity or as one part carrying out.
In many examples, when carrying out movable 110 retainer member substrate (or in where applicable, the device of device substrate
Part) angle less than or equal to about 45 degree between bonding modified layer and/or carrier substrates can mitigate or prevent to device
Semiconductor element on substrate (or in where applicable, device portions of device substrate) causes damage.
Further, it is advantageous in many examples, can be not first such as by bonding agent or bonding
Modified layer carries out chemical treatment, Electromagnetic Treatment (for example, by the electromagnetic radiation of ultraviolet or other forms, such as laser electricity
Magnetic radiation) or heat treatment (for example, using laser send electronics modeling (for example, EPLaRTMTechnique), using laser annealing/erosion
Surface release tech (for example, SUFTLATMTechnique) etc.) (for example, changing the structure of bonding agent or bonding modified layer) reducing by the
Activity 110 is carried out in the case of one bonding force and/or the second bonding force.In other words, the first bonding force and/or the second bonding force can
Directly to keep constant (and in many examples, at least remaining sufficiently low to allow mechanical unsticking), always until entering
Row activity 110.Correspondingly, by avoiding using chemical treatment, Electromagnetic Treatment or heat treatment, can reduce or eliminate due to making
With this chemical treatment, Electromagnetic Treatment or heat treatment caused by semiconductor element device defects and/or the quasiconductor of reduction
Element yield rate.For example, Electromagnetic Treatment can destroy semiconductor element by thermal deformation and/or formation particulate debris.Meanwhile,
Chemical treatment can damage semiconductor element by making semiconductor element be exposed under chemical productss, so as to cause semiconductor element
Part is degenerated.And, using chemical treatment follow-up cleaning is may require to remove the change of any residual from semiconductor element
Product is learned, and/or device substrate (or in where applicable, device portions of device substrate) may not be allowed to keep in separation process
General flat, because while device substrate (or in where applicable, device portions of device substrate) is immersed in chemical productss
Physically constraining device substrate (or in where applicable, device portions of device substrate) can be challenging.
Further, method 100 can include such as cleaning the activity 111 of carrier substrates and/or bonding modified layer, with
Just remaining device layer, bonding agent, and/or half after activity 110 is carried out are removed from carrier substrates and/or bonding modified layer
The residual fraction of conductor element.In certain embodiments, activity 111 can be carried out as follows：Using plasma (for example, oxygen etc.
Gas ions) or clean carrier substrates and/or bonding modified layer using ultrasonic bath.Correspondingly, in many examples, can make
With identical carrier substrate and/or bonding modified layer come the one or many of repetition methods 100.
In embodiments, when with movable 104 (that is, using adhesive bonds) come implementation 100, bonding modified layer
Can be used to allow to separate device substrate with carrier substrates (for example, by activity 110), so that being newly disengaged it
Afterwards or due to separating, little or no bonding agent is stayed on the first surface of device substrate and (that is, lived without the need for carrying out extra manufacture
Move to remove bonding agent).For example, in certain embodiments, after being newly disengaged or due to separating, less than 5 percent, hundred
/ tri-, 2 percent or centesimal bonding agents are stayed on the first surface of device substrate.Meanwhile, in these or other reality
In applying example, after releasing, carrier substrates can be remained coupled in bonding modified layer, and part, it is most of, substantially complete
Portion or whole bonding agents can be remained coupled in bonding modified layer.
In general, implementing to be related to device substrate (for example, flexible substrate, such as poly- naphthalene diformazan using bonding agent
Sour glycol ester, polyethylene terephthalate, glass etc.) it is attached in carrier substrates (for example, rigid substrate) and incites somebody to action
During detached with the carrier substrates routine techniquess for manufacturing electronic device of device substrate, stay after releasing on the device substrate
Residual bonding agent part or all in electronic device product can be caused defective.Such defect can reduce device with (i)
Fabrication yield and/or (ii) increase manufacture complexity required in order to remove this residual bonding agent, the time and/or into
This.Then, because individually the bonding modified layer of method 100 is served as a contrast with the bonding force of device substrate and/or bonding agent more than device
Bonding force between bottom and/or bonding agent and carrier substrates, in implementation 100, after being newly disengaged or due to separating,
Little or no bonding agent is stayed on the device substrate.Accordingly, because method 100 may be implemented such that so that being newly disengaged it
Afterwards or due to separating, little or no bonding agent stays on the device substrate, it is possible to reduce device defects and increase device manufacture
Yield rate, and the extra manufacturing activities of the complexity, time and/or cost of manufacture electronic device need not be increased.
In the accompanying drawings to forward, Figure 17 to Figure 20 is provided and illustrated by rule of thumb by fourier transform infrared spectroscopy
The various charts of the reduction of residual bonding agent during implementation 100 (Fig. 1) at device substrate.In the chart of Figure 17 to Figure 20
Each chart show according to wave number change absorbance, wherein, wave number be by centimetre inverse in units of measure,
And absorbance is with arbitrary unit measurement.
Specifically, Figure 17 is illustrated according to by PEN by fourier transform infrared spectroscopy
(PEN) device substrate is adhered to the chart of the absorbance of the wave number change of the solidification bonding agent on silicon carrier substrate, wherein deducting
The frequency spectrum of silicon carrier substrate and device substrate.It should be noted that PEN (PEN) device substrate is in phase
It is substantial transparent to close in region.Lower wave number outside relevant range has excessive absorption band.In relevant range
Peak value corresponds to hydrocarbon stretching vibration, wherein, the frequency of vibration depend on the quantity of the hydrogen atom being adhered on carbon atom and
The bonding arrangement of carbon atom.
Next figure is gone to, Figure 18 is the chart of the relevant range for illustrating Figure 17.The suction of bonding agent in relevant range
Yield has four main peaks.
Next figure is gone to, Figure 19 is to illustrate to become according to the wave number of the following by fourier transform infrared spectroscopy
The chart of the absorbance of change：(i) unprocessed PEN (PEN) device substrate；(ii) with non-crystalline silicon
(a-Si) processing and PEN detached with silicon carrier substrate on the silicon carrier substrate of bonding modified layer
(PEN) device substrate；And (iii) not have non-crystalline silicon (a-Si) bonding modified layer silicon carrier substrate on processing and with
The detached PEN device substrate of silicon carrier substrate.
Next figure is passed again to, Figure 20 is that the ripple according to the following is illustrated by fourier transform infrared spectroscopy
The chart of the absorbance of number change：I () is in the first poly- naphthalene without processing on the silicon carrier substrate of non-crystalline silicon bonding modified layer
Naphthalate (PEN) device substrate, wherein by PEN (PEN) device substrate and silicon carrier
Substrate is separated, and has deducted the frequency spectrum of the second PEN (PEN) device substrate；(ii) by poly- naphthalene
The solidification bonding agent stayed on silicon carrier substrate after naphthalate (PEN) device substrate and silicon carrier substrate unsticking,
The frequency spectrum of silicon carrier substrate is wherein deducted；And (iii) is processed on the silicon carrier substrate with non-crystalline silicon bonding modified layer
The first PEN (PEN) device substrate, wherein by PEN (PEN) device serve as a contrast
Bottom separates with silicon carrier substrate, and has deducted the second unprocessed PEN (PEN) device substrate
Frequency spectrum.For clarity, with descending show item (i) to (iii) in fig. 20.It should be noted that for item (iii),
All of four peak values are all lacked.Meanwhile, the extra peak on item (i) and (iii) can be attributed to the first poly- naphthalenedicarboxylic acid second
Thickness between diol ester (PEN) device substrate and the second unprocessed PEN (PEN) device substrate and/
Or the nuance on composition.
Meanwhile, in these embodiments or in other embodiments, such as not carrying out activity 104 (that is, without the need for bonding
Agent) but carry out implementation in the case of such as activity 701 (for example, on bonding modified layer Direct precipitation device substrate)
100, bonding modified layer can operate the premature disengagement for preventing device substrate during activity 107.In each example,
Enforcement is related to serve as a contrast device substrate (for example, flexible substrate, such as polyether sulfone) connection to carrier (for example, by Direct precipitation)
It is on bottom (for example, rigid substrate, such as glass) and device substrate is detached with carrier substrates for manufacturing quasiconductor
During routine techniquess, frequently by the formula for changing device substrate bonding force of the control device substrate to carrier substrates is carried out.However,
It is desired with carrier substrates segregation ratio that the batch of device substrate formula sometimes results in device substrate to the change separation of batch
Will be faster.For example, device substrate machine operation sometimes result in device substrate with carrier substrates segregation ratio is desired will be more
Hurry up.Device substrate can also cause device defects and pattern deformation with the premature disengagement of carrier substrates, it reduce device and be manufactured into
Product rate.Advantageously, because individually the bonding modified layer of method 100 is more than device substrate and carries with the bonding force of device substrate
Bonding force between body substrate, can prevent premature disengagement, so as to produce less device defects and less pattern deformation.
Although it should be noted that bonding modified layer be described generally as increase carrier substrates on bonding force, in one kind
In alternative method, bonding modified layer can be deposited on the device substrate and be configured for reducing bonding force.At these
In embodiment, when device substrate is flexible substrate, bonding will be selected from the flexible material that will not interfere with device substrate
Modified layer.
Further, disclosed by here method (for example, method 100 (Fig. 1)) and semiconductor device (for example, quasiconductor
Device 400 (Fig. 4, Fig. 6, Figure 11, Figure 12 and Figure 15) and/or semiconductor device 500 (Fig. 5, Fig. 9, Figure 13, Figure 14 and Figure 16))
Can be particularly well applicable for implementing semiconductor manufacturing, wherein, semiconductor manufacturing constrained by ceiling temperature (such as by
In the material being currently in use).For example, when being flexible substrate, many device substrates are (including exemplary means presented above
Many materials in backing material) manufacture higher than some temperature can be excluded.In certain embodiments, in semiconductor manufacturing
Some or all may not exceed about 160 DEG C, 180 DEG C, 200 DEG C, 220 DEG C, 250 DEG C or 350 DEG C.
Can be highly suitable for implementing the method (for example, method 100 (Fig. 1)) and semiconductor device (example disclosed by this
Such as, semiconductor device 400 (Fig. 4, Fig. 6, Figure 11, Figure 12 and Figure 15) and/or semiconductor device 500 (Fig. 5, Fig. 9, Figure 13, Figure 14
And Figure 16)) various semiconductor fabrication process and device be described in below with reference to document, in these lists of references
The disclosure content of each list of references is hereby incorporated by full by quoting with it：I () is in the U.S. disclosed in September in 2011 22 days
Patent application publication serial number US 20110228492, (ii) discloses sequence in the U.S. Patent Application Publication of on October 17th, 2013
Row number US 20130271930, (iii) discloses serial number US in the U.S. Patent Application Publication of on March 15th, 2012
20120061672, (iv) serial number US 20140008651 is disclosed in the U.S. Patent Application Publication of on January 9th, 2014, (v)
In International Patent Application Publication serial number WO 2013082138 disclosed in 6 days June in 2013, (vi) in the public affairs of on March 6th, 2014
The U.S. Patent Application Publication serial number US 20140065389 for opening, (vii) in United States Patent (USP) Shen disclosed in 28 days March in 2013
Serial number US 20130075739 please be disclose, (viii) serial number is disclosed in the U.S. Patent Application Publication of on March 17th, 2011
US 20110064953, (ix) discloses serial number US in the U.S. Patent Application Publication of on November 25th, 2010
20100297829, (x) serial number US 20100264112 is disclosed in the U.S. Patent Application Publication of on October 21st, 2010,
(xi) serial number US 20110068492 is disclosed in the U.S. Patent Application Publication of on March 24th, 2011, (xii) in 2011 years 5
The moon, U.S. Patent Application Publication on the 31st disclosed serial number US 20060194363, and (xiii) on 2 3rd, 2011 disclosures
U.S. Patent Application Publication serial number US 20110023672.
Although the invention has been described with respect to specific embodiments, it should be understood that those skilled in the art can be with
Various changes are carried out without departing from the spirit and scope of the present invention.Correspondingly, the disclosure purport of embodiments of the invention
Restriction is not lain in explanation the scope of the present invention.It is intended that the scope of the present invention should be only limitted to claims
Required content.For example, for the ordinary skill in the art, it would be obvious that of method 100 (Fig. 1)
Or multinomial activity can be made up of many different activities, program and/or flow process, and can be by many disparate modules and to be permitted
More different orders is carried out, and any element of Fig. 1 to Figure 20 can be modified, and some of these embodiments are implemented
Example before discussion do not necessarily represent all may embodiment complete description.
Generally, the replacement of one or more desired elements constitutes reconstruct rather than repairs.Additionally, with regard to particular implementation
Example describes the solution of benefit, other advantages and problem.However, must not believe that can cause any benefit, advantage or
Solution generation or the benefit, advantage, issue-resolution and any element that become more apparent upon or multiple element are any
Or crucial, requirement the or necessary feature or element of whole claim, unless set forth this in such claim
Class benefit, advantage, solution or element.
If not being under special principle in this disclosed embodiment and restriction also, embodiment and/or restriction are as follows
And it is special by masses：(1) do not distinctly claim in detail in the claims；And (2) are or are under the doctrine of equivalents claim
The element referred in book and/or the potential equivalent of restriction.
Claims (24)
1. a kind of method, including：
Carrier substrates are provided；
Bonding modified layer is provided in the carrier substrates；
Device substrate is provided；And
The device substrate is linked together with the carrier substrates, when the device substrate is coupled together with the carrier substrates
When, the bonding modified layer is located between the device substrate and the carrier substrates；
Wherein：
The bonding modified layer is configured so that the first bonding force of the device substrate by the bonding modified layer and the carrier lining
Bottom couples indirectly, and first bonding force is more than the device substrate and the carrier substrates phase in the case of the not bonding modified layer
Connection the second bonding force used.
2. the method for claim 1, wherein：
The device substrate and the carrier substrates are linked together and are directly bonded to the bonding modified layer including by the device substrate
On.
3. the method for claim 1, wherein：
The bonding modified layer is provided in the carrier substrates to be included：
Before the device substrate and the carrier substrates are linked together, the middle body of the bonding modified layer is lost
Carve, so that the bonding modified layer is only left on the peripheral part of the bonding modified layer.
4. the method for claim 1, wherein：
There is provided in the carrier substrates bonding modified layer be included in the substantially whole surface of the carrier substrates provide this glue
Connect modified layer.
5. the method for claim 1, wherein at least one in the following：
The carrier substrates include rigid substrate；Or
The device substrate includes flexible substrate.
6. method as claimed in claim 5, wherein：
The rigid substrate includes at least one in the following：Aluminum, silicon, glass, metal or sapphire.
7. method as claimed in claim 5, wherein：
The flexible substrate includes at least one in the following：PEN, polyethylene terephthalate
Ester, polyether sulfone, polyimides, Merlon, cyclic olefine copolymer, liquid crystal polymer or glass.
8. the method for claim 1, wherein：
The bonding modified layer includes non-crystalline silicon.
9. the method as any one of claim 1 to 8, further includes：
After the device substrate and the carrier substrates are linked together, the device substrate and the carrier substrates are connected in into one
One or more semiconductor elements are provided in the device substrate while rising.
10. method as claimed in claim 9, further includes：
After one or more semiconductor elements are provided in the device substrate, by the device substrate and the carrier substrates machinery
Ground is separated.
11. methods as claimed in claim 10, wherein：
The device substrate and the carrier substrates are mechanically decoupled need not reduced by first bonding force and need not reduce
Second bonding force to carry out the mechanical separation in the case of occur.
12. methods as claimed in claim 10, further include：
At least one of first bonding force or second bonding force bonding force is reduced to carry out the mechanical separation.
13. methods as any one of claim 1 to 8, further include：
Bonding agent is provided；
Wherein：
The device substrate and the carrier substrates are linked together bonding including the device substrate is bonded to into this with the bonding agent
Modified layer.
14. methods as claimed in claim 13, wherein：
The bonding agent includes acrylate polymer bonding agent.
15. methods as claimed in claim 13, further include：
After one or more semiconductor elements are provided in the device substrate, by the device substrate and the carrier substrates machinery
Ground is separated.
16. methods as claimed in claim 15, wherein：
After just by the device substrate and the carrier substrates mechanically unsticking, the bonding agent is stayed less than about 5 percent
At the device substrate.
17. methods as claimed in claim 15, wherein：
After just by the device substrate and the carrier substrates mechanically unsticking, the bonding agent is not left on the device substrate
On.
18. methods as claimed in claim 15, wherein：
The device substrate and the carrier substrates are mechanically decoupled need not reduced by first bonding force and need not reduce
Second bonding force to carry out the mechanical separation in the case of occur.
19. methods as claimed in claim 15, further include：
At least one of first bonding force or second bonding force bonding force is reduced to carry out the mechanical separation.
A kind of 20. methods, including：
Carrier substrates are provided；
Bonding modified layer is provided in the carrier substrates；
Bonding agent is provided；
Device substrate is provided, the device substrate includes first surface and the second surface relative with the first surface；
The first surface of the device substrate and the carrier substrates are linked together with the bonding agent, when being somebody's turn to do for the device substrate
When first surface is linked together with the carrier substrates, the bonding modified layer is located at first surface and the load of the device substrate
Between body substrate；
After the first surface of the device substrate and the carrier substrates are linked together, by the device substrate and the carrier
One or more semiconductor elements are provided while substrate is linked together on the second surface of the device substrate；And
After one or more semiconductor elements are provided on the second surface of the device substrate, being somebody's turn to do the device substrate
First surface is mechanically decoupled with the carrier substrates, so that the bonding agent is stayed in less than 5% after being newly disengaged
On the first surface of the device substrate.
21. methods as claimed in claim 20, wherein：
After the mechanical separation, the carrier substrates are remained coupled in the bonding modified layer, and the major part of the bonding agent
Remain coupled in the bonding modified layer.
22. methods as described in claim 20 or 21, wherein：
The carrier substrates include rigid substrate；
The device substrate includes flexible substrate；
The bonding modified layer includes non-crystalline silicon；And
The carrier substrates do not have non-crystalline silicon.
A kind of 23. methods, including：
Carrier substrates are provided, the carrier substrates include first surface and the second surface relative with the first surface；
Device substrate is provided, the device substrate includes first surface and the second surface relative with the first surface；
At least a portion of the second surface of the carrier substrates is processed, is attached to the first surface for increasing the device substrate
The upper power used of at least a portion of the second surface of the carrier substrates；And
The first surface of the device substrate is linked together with the second surface of the carrier substrates.
24. methods as claimed in claim 23, further include：
After the second surface of the first surface of the device substrate and the carrier substrates is linked together, by the device
One or more are provided while substrate is linked together with the carrier substrates on the second surface of the device substrate partly to lead
Volume elements part.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| WO2017034644A2 (en) | 2015-06-09 | 2017-03-02 | ARIZONA BOARD OF REGENTS a body corporate for THE STATE OF ARIZONA for and on behalf of ARIZONA STATE UNIVERSITY | Method of providing an electronic device and electronic device thereof |
| US10381224B2 (en) | 2014-01-23 | 2019-08-13 | Arizona Board Of Regents On Behalf Of Arizona State University | Method of providing an electronic device and electronic device thereof |
| WO2015156891A2 (en) | 2014-01-23 | 2015-10-15 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University | Method of providing a flexible semiconductor device and flexible semiconductor device thereof |
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| JP2017518638A (en) | 2017-07-06 |
| EP3143641A4 (en) | 2018-01-17 |
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| US20170062380A1 (en) | 2017-03-02 |
| EP3143641A1 (en) | 2017-03-22 |
| CN106663640B (en) | 2020-01-07 |
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