CN105932122A - LED and manufacturing method therefor - Google Patents
LED and manufacturing method therefor Download PDFInfo
- Publication number
- CN105932122A CN105932122A CN201610426653.5A CN201610426653A CN105932122A CN 105932122 A CN105932122 A CN 105932122A CN 201610426653 A CN201610426653 A CN 201610426653A CN 105932122 A CN105932122 A CN 105932122A
- Authority
- CN
- China
- Prior art keywords
- led
- polymer composite
- transparency conducting
- conductive polymer
- conducting layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000002131 composite material Substances 0.000 claims abstract description 28
- 239000011231 conductive filler Substances 0.000 claims abstract description 27
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000003822 epoxy resin Substances 0.000 claims abstract description 8
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000004698 Polyethylene Substances 0.000 claims abstract description 7
- 239000006229 carbon black Substances 0.000 claims abstract description 7
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 7
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 7
- -1 polyethylene Polymers 0.000 claims abstract description 7
- 229920000573 polyethylene Polymers 0.000 claims abstract description 7
- 229920005989 resin Polymers 0.000 claims abstract description 7
- 239000011347 resin Substances 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- 229920002521 macromolecule Polymers 0.000 claims description 23
- 239000011159 matrix material Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 21
- 238000001259 photo etching Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 7
- 229920000914 Metallic fiber Polymers 0.000 claims description 6
- 239000013528 metallic particle Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 239000008187 granular material Substances 0.000 abstract 2
- 229920000642 polymer Polymers 0.000 abstract 2
- 239000002041 carbon nanotube Substances 0.000 abstract 1
- 229910021393 carbon nanotube Inorganic materials 0.000 abstract 1
- 239000000835 fiber Substances 0.000 abstract 1
- 230000000630 rising effect Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Led Devices (AREA)
Abstract
The invention discloses an LED. An epitaxial layer is grown on a substrate; a transparent conductive layer with variable electrical resistivity is manufactured on the epitaxial layer; a P electrode is manufactured on the transparent conductive layer; an N electrode is manufactured on the epitaxial layer; the transparent conductive layer is prepared from a conductive polymer composite material; the conductive polymer composite material comprises a polymer base material and a conductive filler at a volume ratio of 1 to 0.01-1 to 1; the polymer base material is one of epoxy resin, silica resin, polyethylene or vinylidene fluoride; and the conductive filler is one or more of carbon black, graphene, carbon nanotube, metal granules, metal fibers or metal oxide granules. The invention also discloses a manufacturing method for the LED. According to the LED, the problem that the corresponding driving current of the LED chip under a constant-voltage driving mode is increased sharply along with the increasing of temperature can be solved.
Description
Technical field
The present invention relates to LED technology field, refer in particular to a kind of LED and manufacture method thereof.
Background technology
In prior art, the drive pattern of LED has constant voltage to drive and constant current drives two kinds: wherein, the drawback of constant voltage drive pattern is: as shown in Figure 1, when the junction temperature of LED rises to T2 from T1, owing to the energy gap of semiconductor can diminish along with the rising of temperature, therefore the cut-in voltage of LED also can diminish accordingly, i.e. I-V curve shown in Fig. 1 can be to left.If the driving voltage of LED remains V, then when the junction temperature of LED rises to T2 from T1, its corresponding driving electric current will rise to I2 from I1, thus the electric current that drives causing LED chip corresponding under constant voltage drive pattern drastically raises with the rising of temperature, the phenomenon such as cause that LED luminance inequality is even burnt.
In view of this, the present invention develops a kind of LED overcoming constant voltage drive pattern defect and manufacture method thereof, and this case thus produces.
Summary of the invention
It is an object of the invention to provide a kind of LED and manufacture method thereof, the problem that drive electric current with the rising of temperature drastically raise corresponding under constant voltage drive pattern to solve LED chip.
For reaching above-mentioned purpose, the solution of the present invention is:
A kind of LED, at Grown epitaxial layer, makes the transparency conducting layer of variable resistor rate on epitaxial layer, makes P electrode over transparent conductive layer, and makes N electrode on epitaxial layer；Transparency conducting layer is made up of conductive polymer composite, conductive polymer composite is made up of for 1:0.01-1:1 by volume macromolecule matrix material and conductive filler, macromolecule matrix material is the one in epoxy resin, silica resin, polyethylene, vinylidene fluoride, and conductive filler is one or more in carbon black, Graphene, CNT, metallic particles, metallic fiber, metal oxide particle.
Further, the volume ratio of macromolecule matrix material and conductive filler is 1:0.1-1:0.5.
Further, the thickness of transparency conducting layer is 1-5000A.
Further, the thickness of transparency conducting layer is 50-3000A.
A kind of LED manufacture method, comprises the following steps:
One, at Grown epitaxial layer；
Two, through photoetching and etching, epitaxial layer makes table top；
Three, conductive polymer composite is uniformly coated on epitaxial layer, conductive polymer composite is made up of by 1:0.01-1:1 by volume macromolecule matrix material and conductive filler, macromolecule matrix material is the one in epoxy resin, silica resin, polyethylene, vinylidene fluoride, and conductive filler is one or more in carbon black, Graphene, CNT, metallic particles, metallic fiber, metal oxide particle；
Four, make conductive polymer composite solidify epitaxial wafer heating；
Five, the conductive polymer composite after solidification, through photoetching and etching, form the transparency conducting layer of variable resistor rate；
Six, make electrode through photoetching, evaporation, alloy process；
Seven, to substrate grinding and polishing, then epitaxial wafer is cut into independent LED device.
Further, in step 3, by the method for spin coating or spraying, conductive polymer composite is uniformly coated on epitaxial layer.
Further, in step 4, epitaxial wafer is positioned in baking oven or on hot plate, heating makes conductive polymer composite solidify.
Further, the volume ratio of macromolecule matrix material and conductive filler is 1:0.1-1:0.5.
Further, the thickness of transparency conducting layer is 1-5000A.
Further, the thickness of transparency conducting layer is 50-3000A.
After using such scheme, the present invention has the transparency conducting layer of variable resistor rate, and this transparency conducting layer is made up of conductive polymer composite, and its resistivity raises with the rising of temperature.The change in resistance of this transparency conducting layer can increase extra series resistance for LED chip, so that the LED chip worked under constant voltage drive pattern can remain in that stable driving electric current when junction temperature rises.
Accompanying drawing explanation
Fig. 1 is the I-V curve figure of prior art LED constant voltage drive pattern；
Fig. 2 is the structural representation of the present invention；
Fig. 3 is that the LED resistivity of the present invention varies with temperature curve map；
Fig. 4 is the I-V curve figure of the present invention.
Label declaration
Substrate 1 epitaxial layer 2
Transparency conducting layer 3 P electrode 41
N electrode 42.
Detailed description of the invention
Below in conjunction with drawings and the specific embodiments, the present invention is described in detail.
Refering to shown in Fig. 2 to Fig. 4, a kind of LED that the present invention discloses, grown epitaxial layer 2 on substrate 1, epitaxial layer 2 makes the transparency conducting layer 3 of variable resistor rate, transparency conducting layer 3 makes P electrode 41, and on epitaxial layer 2, makes N electrode 42.
Transparency conducting layer 3 is made up of conductive polymer composite, and conductive polymer composite is made up of for 1:0.01-1:1 by volume macromolecule matrix material and conductive filler, and the preferably volume ratio of macromolecule matrix material and conductive filler is 1:0.1-1:0.5.The thickness of transparency conducting layer 3 is 1-5000A, and the preferably thickness of transparency conducting layer 3 is 50-3000A.
Macromolecule matrix material is the one in epoxy resin, silica resin, polyethylene, vinylidene fluoride, and conductive filler is one or more in carbon black, Graphene, CNT, metallic particles, metallic fiber, metal oxide particle.
As shown in Figure 3, owing to the thermal coefficient of expansion of conductive filler is far smaller than the thermal coefficient of expansion of macromolecule matrix material, rising along with temperature, the volume of macromolecule matrix is with temperature generation thermal expansion, and the thermal expansion of conductive filler is almost negligible, decline in the volume fraction that macroscopically will appear as conductive filler, it is equivalent to conductive filler " diluted ", thus cause the resistivity of this composite drastically to raise, producing strong positive temperature coefficient (PTC) effect, Tc is the Curie temperature of this material.By selecting different macromolecule matrix materials and conductive filler, and change macromolecule matrix material and the volume ratio of conductive filler, the Curie temperature of the transparency conducting layer 3 of described variable resistor rate can be made to fall in the operating temperature range of LED.Further, the Curie temperature of the transparency conducting layer 3 of described variable resistor rate falls within the temperature range of 20-200 DEG C.
As shown in Figure 4, there is described in the I-V curve of variable resistor rate transparency conducting layer LED.When the junction temperature of LED is T1, its driving voltage and driving electric current are respectively V and I.When the junction temperature of LED is risen to T2 by T1, owing to the energy gap of semiconductor can diminish along with the rising of temperature, therefore the cut-in voltage of LED also can diminish accordingly, i.e. the cut-in voltage of the I-V curve corresponding to T2 compared to the cut-in voltage of the I-V curve corresponding to T1 to left.Owing to the resistivity of transparency conducting layer 3 raises with the rising of temperature, being equivalent to add extra series resistance for LED chip, therefore its slope while cut-in voltage diminishes of the I-V curve corresponding to T2 the most correspondingly diminishes (being equivalent to series electrical resistive big).Therefore, described have the LED of variable resistor rate transparency conducting layer 3 when junction temperature is risen to T2 by T1, its driving voltage and driving electric current remain able to stable at V and I, thus avoid the problem driving electric current drastically to raise that LED chip is corresponding under constant voltage drive pattern with the rising of temperature.
Invention additionally discloses a kind of LED manufacture method, comprise the following steps:
One, grown epitaxial layer 2 on substrate 1.
Two, through photoetching and etching, epitaxial layer 2 makes table top.
Three, by the method for spin coating or spraying, conductive polymer composite is uniformly coated on epitaxial layer 2, conductive polymer composite is made up of by 1:0.01-1:1 by volume macromolecule matrix material and conductive filler, macromolecule matrix material is the one in epoxy resin, silica resin, polyethylene, vinylidene fluoride, and conductive filler is one or more in carbon black, Graphene, CNT, metallic particles, metallic fiber, metal oxide particle.The volume ratio of macromolecule matrix material and conductive filler is preferably 1:0.1-1:0.5.
Four, epitaxial wafer is positioned in baking oven or on hot plate, heating makes conductive polymer composite solidify.
Five, the conductive polymer composite after solidification, through photoetching and etching, form the transparency conducting layer 3 of variable resistor rate.
Six, make electrode through photoetching, evaporation, alloy process.
Seven, to substrate grinding and polishing, then epitaxial wafer is cut into independent LED device.
Embodiment
Epoxy resin is used as conductive filler as macromolecule matrix material, tin indium oxide (ITO), uniformly to mix according to the volume ratio of 1:0.4, make conductive polymer composite.By the method for spin coating, conductive polymer composite is uniformly coated on epitaxial layer.Then epitaxial wafer is positioned in baking oven, solidifies 10 minutes at 110 DEG C.Through photoetching and the etching process of standard, forming the transparency conducting layer of variable resistor rate, its thickness is 1200A.Through the photoetching of standard, evaporation, alloy process, make metal electrode.Finally substrate is ground polishing, epitaxial wafer is cut into area and is about 120000 um2Independent LED device.The Curie temperature Tc of the transparency conducting layer of variable resistor rate described in the present embodiment is about 100 DEG C, and its resistivity at room temperature is about 50 Ω cm, and the resistivity at a temperature of 120 DEG C is about 1000 Ω cm.When the junction temperature of LED chip rises to 120 DEG C from room temperature, the resistivity of the transparency conducting layer of described variable resistor rate rises 20 times the most simultaneously.This LED chip when room temperature and 120 DEG C all can steady operation under the constant drive voltage of 3V, its corresponding driving electric current is all stable at 10mA when room temperature and 120 DEG C.
The foregoing is only the preferred embodiments of the present invention, not the restriction to this case design, all equivalent variations done according to the design key of this case, each fall within the protection domain of this case.
Claims (10)
1. a LED, at Grown epitaxial layer, makes the transparency conducting layer of variable resistor rate on epitaxial layer, makes P electrode over transparent conductive layer, and makes N electrode on epitaxial layer；It is characterized in that: transparency conducting layer is made up of conductive polymer composite, conductive polymer composite is made up of for 1:0.01-1:1 by volume macromolecule matrix material and conductive filler, macromolecule matrix material is the one in epoxy resin, silica resin, polyethylene, vinylidene fluoride, and conductive filler is one or more in carbon black, Graphene, CNT, metallic particles, metallic fiber, metal oxide particle.
2. a kind of LED as claimed in claim 1, it is characterised in that: the volume ratio of macromolecule matrix material and conductive filler is 1:0.1-1:0.5.
3. a kind of LED as claimed in claim 1 or 2, it is characterised in that: the thickness of transparency conducting layer is 1-5000A.
4. a kind of LED as claimed in claim 3, it is characterised in that: the thickness of transparency conducting layer is 50-3000A.
5. a LED manufacture method, it is characterised in that: comprise the following steps:
One, at Grown epitaxial layer；
Two, through photoetching and etching, epitaxial layer makes table top；
Three, conductive polymer composite is uniformly coated on epitaxial layer, conductive polymer composite is made up of by 1:0.01-1:1 by volume macromolecule matrix material and conductive filler, macromolecule matrix material is the one in epoxy resin, silica resin, polyethylene, vinylidene fluoride, and conductive filler is one or more in carbon black, Graphene, CNT, metallic particles, metallic fiber, metal oxide particle；
Four, make conductive polymer composite solidify epitaxial wafer heating；
Five, the conductive polymer composite after solidification, through photoetching and etching, form the transparency conducting layer of variable resistor rate；
Six, make electrode through photoetching, evaporation, alloy process；
Seven, to substrate grinding and polishing, then epitaxial wafer is cut into independent LED device.
6. a kind of LED manufacture method as claimed in claim 5, it is characterised in that: in step 3, by the method for spin coating or spraying, conductive polymer composite is uniformly coated on epitaxial layer.
7. a kind of LED manufacture method as described in claim 5 or 6, it is characterised in that: in step 4, epitaxial wafer is positioned in baking oven or on hot plate, heating makes conductive polymer composite solidify.
8. a kind of LED manufacture method as described in claim 5 or 6, it is characterised in that: the volume ratio of macromolecule matrix material and conductive filler is 1:0.1-1:0.5.
9. a kind of LED manufacture method as described in claim 5 or 6, it is characterised in that: the thickness of transparency conducting layer is 1-5000A.
10. a kind of LED manufacture method as claimed in claim 9, it is characterised in that: the thickness of transparency conducting layer is 50-3000A.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610426653.5A CN105932122B (en) | 2016-06-16 | 2016-06-16 | A kind of LED and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610426653.5A CN105932122B (en) | 2016-06-16 | 2016-06-16 | A kind of LED and its manufacturing method |
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| CN105932122A true CN105932122A (en) | 2016-09-07 |
| CN105932122B CN105932122B (en) | 2018-06-29 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461644A (en) * | 2018-01-19 | 2018-08-28 | 昆山国显光电有限公司 | The preparation method and flexible display screen of a kind of conductive film, conductive film |
| CN108630708A (en) * | 2017-03-15 | 2018-10-09 | 京东方科技集团股份有限公司 | Electrically-conductive backing plate and preparation method thereof, display device |
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| CN101809679A (en) * | 2007-09-28 | 2010-08-18 | 东丽株式会社 | Conductive film and method for producing the same |
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| DE102010042602A1 (en) * | 2010-10-19 | 2012-04-19 | Osram Opto Semiconductors Gmbh | Conductive connecting agent useful for producing electrical or thermal contact between semiconductor chip and substrate of the optoelectronic component, comprises adhesive matrix and filler particles incorporated in it |
| CN102863913A (en) * | 2012-09-10 | 2013-01-09 | 常州大学 | Novel transparent conductive film and preparation method thereof |
| CN103972374A (en) * | 2013-01-25 | 2014-08-06 | 台积固态照明股份有限公司 | Multi-Vertical LED Packaging Structure |
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2016
- 2016-06-16 CN CN201610426653.5A patent/CN105932122B/en active Active
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| CN101018828A (en) * | 2004-09-14 | 2007-08-15 | 昭和电工株式会社 | Electroconductive resin composition, production method and use thereof |
| CN1996506A (en) * | 2006-12-13 | 2007-07-11 | 华南理工大学 | A making method for stibium-doped conductive tin dioxide transparent material |
| CN101809679A (en) * | 2007-09-28 | 2010-08-18 | 东丽株式会社 | Conductive film and method for producing the same |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108630708A (en) * | 2017-03-15 | 2018-10-09 | 京东方科技集团股份有限公司 | Electrically-conductive backing plate and preparation method thereof, display device |
| US11231606B2 (en) | 2017-03-15 | 2022-01-25 | Boe Technology Group Co., Ltd. | Conductive substrate, manufacturing method thereof and display device |
| CN108461644A (en) * | 2018-01-19 | 2018-08-28 | 昆山国显光电有限公司 | The preparation method and flexible display screen of a kind of conductive film, conductive film |
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| CN105932122B (en) | 2018-06-29 |
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