CN105742403A - Back contact cell and metallization method for double-face cell - Google Patents
Back contact cell and metallization method for double-face cell Download PDFInfo
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- CN105742403A CN105742403A CN201410766461.XA CN201410766461A CN105742403A CN 105742403 A CN105742403 A CN 105742403A CN 201410766461 A CN201410766461 A CN 201410766461A CN 105742403 A CN105742403 A CN 105742403A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a back contact cell and a metallization method for a double-face cell. The metallization method for the back contact cell comprises steps that S1, a PN structure is formed, the PN structure comprises a first conductive substrate, and a first conductive doping region arranged at a back face of the first conductive substrate and a second conductive doping region arranged at a surface of a groove; S2, a contact metal is deposited on the back face of the PN structure, the contact metal covers the first conductive doping region, the second conductive doping region and the side wall of the groove; S3, a conductive metal is prepared by conductive slurry through jet printing or low-temperature screen printing on the contact metal; and S4, the back face of the structure acquired at the step S3 is etched to remove the contact metal which is not covered by the conductive metal. The metallization method employs a reverse etching mode, the conductive metal is taken as a mask film to protect the part which does not requires etching, the technology is simple, and the flow is relatively small.
Description
Technical field
The present invention relates to a kind of method for metallising, particularly relate to the method for metallising of a kind of back contact battery and double-side cell.
Background technology
In the making of solaode, except doping process, the quality of metallization process also affects the performance of battery to a certain extent.Especially for back contact battery, owing to positive and negative electrode is respectively positioned on the back side of cell piece, also it is increased by the difficulty of metallization process undoubtedly.
Sunpower company proposes a kind of metallization process, with reference to Fig. 1 a-Fig. 1 e, first provides a PN, and it includes substrate 10, BSF21 (back surface field) and emitter stage (emitter) 22.Overleaf after passivation (in order to highlight metallized part, therefore omitting passivation layer in the accompanying drawings), form the first metal 30 at the back side of PN, cover the back side of whole PN.Afterwards, the regional area on the first metal 30 forms protection glue 40 (resist), and the position corresponding with BSF and emitter stage is not provided with protection glue.Then the second metal 50 is electroplated in the position being not provided with protection glue on the first metal 30.Afterwards, remove protection glue, then etch the first metal and make the part not covered by the second metal 50 etched, obtain the structure shown in Fig. 1 e, and not etched first metal 31 and 32 and the second metal 50 together constitute the electrode of back contact battery.
In the above-mentioned methods; although forming the electrode that quality is higher, but metallization process being slightly complicated, involved processing step is more; needs arrange protection glue and are removed by protection glue after plating completes again, and this too increases many costs of manufacture while increasing process complexity.Furthermore, step is more many, and uncertain factor is also increased by.
Summary of the invention
The technical problem to be solved in the present invention is to overcome solaode metallization process complex process, relatively costly defect in prior art, the method for metallising of a kind of back contact battery and double-side cell is provided, utilizing reversely etching that step is simplified, technology difficulty is also greatly lowered simultaneously.
The present invention solves above-mentioned technical problem by following technical proposals:
The method for metallising of a kind of back contact battery, it is characterised in that comprise the following steps:
S1, form a PN, this PN includes the first conductivity type substrate, the back side of this first conductivity type substrate includes groove, and is arranged in the first conduction type doped region at the back side of this first conductivity type substrate and is arranged in the second conduction type doped region of this groove surfaces；
S2, on the back side of this PN depositing contact metal, this contacting metal covers the sidewall of this first conduction type doped region, this second conduction type doped region and this groove；
S3, on this contacting metal spray printing or Screen-printed conductive slurry to form conducting metal, normal direction from this first conductivity type substrate, this conducting metal be respectively formed in on this corresponding region of the first conduction type doped region and region corresponding with this second conductivity type regions, wherein this electrocondution slurry is the electrocondution slurry of process annealing or low-temperature setting, and low temperature is 80 DEG C-650 DEG C；
S4, structure obtained for etching step S3 the back side with the contacting metal that do not covered by this conducting metal of removal.
In this technical scheme, prevent the contacting metal contacted to be etched as mask conducting metal, can be achieved with the making of electrode in back contact battery from there through several simple steps.Furthermore, the formation of conducting metal is merely by simple spray printing or what silk screen printing realized, and technique is very simply controlled, without using complicated equipment.
Preferably, this contacting metal is selected from aluminum, titanium and nickel；And/or, this electrocondution slurry is selected from silver slurry and aluminium paste.
Preferably, step S2 forms this contacting metal by the mode of evaporation.
Preferably, the thickness of this contacting metal is 1nm-5 μm, and/or, the thickness of this electrocondution slurry is 10nm-100 μm.
Preferably, this groove is the wedge-shaped impression that narrow base, top are wide, wherein, sees in the normal direction of this first conductivity type substrate, is the side close to this first conductivity type substrate bottom this, and this top is the side away from this first conductivity type substrate.
The present invention also provides for the method for metallising of a kind of double-side cell, and it is characterized in that, comprises the following steps:
T1, forming a PN, this PN includes the first conductivity type substrate, is arranged in the first conduction type doped layer at this first conductivity type substrate back side and is arranged in the second conduction type doped layer in this first conductivity type substrate front；
T2, respectively at the depositing contact metal on the front and back of this PN；
T3, on the contacting metal of front and back, spray printing or Screen-printed conductive slurry are to form the conducting metal of palisade respectively, and wherein this electrocondution slurry is the electrocondution slurry of process annealing or low-temperature setting, and low temperature is 80 DEG C-650 DEG C；
T4, structure obtained for etching step T3 front and back with the contacting metal that do not covered by this conducting metal of removal.
Preferably, this contacting metal is selected from aluminum, titanium and nickel；And/or, this electrocondution slurry is selected from silver slurry and aluminium paste.
Preferably, step T2 forms this contacting metal by the mode of evaporation.
Preferably, the thickness of this contacting metal is 1nm-5 μm, and/or, the thickness of this electrocondution slurry is 10nm-100 μm.
Meeting on the basis of this area general knowledge, above-mentioned each optimum condition, can combination in any, obtain the preferred embodiments of the invention.
The actively progressive effect of the present invention is in that:
1, the method for metallising of the present invention have employed the mode of reversely etching, and not only as electrode but also as mask, conducting metal had been protected the part without etching, and technique is simple, and flow process is less.
2, the method for metallising of the present invention is simultaneously suitable for back contact battery and double-side cell, and the suitability preferably, uses flexibly.
Accompanying drawing explanation
Fig. 1 a-Fig. 1 e is a kind of metallized decomposition step schematic diagram of back contact battery in prior art.
Fig. 2-Fig. 5 is the decomposition step schematic diagram of the embodiment of the present invention 1.
Fig. 6-Fig. 9 is the decomposition step schematic diagram of the embodiment of the present invention 2.
Figure 10 is the enlarged diagram of part A in Fig. 9.
Detailed description of the invention
Mode by the examples below further illustrates the present invention, but does not therefore limit the present invention among described scope of embodiments.The experimental technique of unreceipted actual conditions in the following example, conventionally and condition, or selects according to catalogue.
Embodiment 1
The present embodiment, for back contact battery, introduces the method for metallising of back contact battery, specific as follows:
With reference to Fig. 2, form a PN, this PN includes the first conductivity type substrate 1, the back side of this first conductivity type substrate 1 includes groove, and is arranged in the first conduction type doped region 21 at the back side of this first conductivity type substrate 1 and is arranged in the second conduction type doped region 22 of this groove surfaces.In order to make diagram be more easily understood, in Fig. 2-Fig. 5, the back side indicated above, lower section represents front.
With reference to Fig. 3, depositing contact metal 3 on the back side of this PN, this contacting metal 3 covers the sidewall of this first conduction type doped region 21, this second conduction type doped region 22 and this groove.In the present embodiment, this contacting metal is aluminum, and it adopts the mode of evaporation to be formed.
With reference to Fig. 4, on this contacting metal, 3 Screen-printed conductive slurries are to form conducting metal, normal direction from this first conductivity type substrate, this conducting metal is respectively formed in and (representing with accompanying drawing labelling 41 and 42 respectively) on this corresponding region of the first conduction type doped region and region corresponding with this second conductivity type regions, wherein this electrocondution slurry is the electrocondution slurry of process annealing or low-temperature setting, and low temperature is 300 DEG C.In this embodiment, this electrocondution slurry is silver slurry.
With reference to Fig. 5, the contacting metal that the back side of the structure shown in etch figures(s) 4 is not covered by this conducting metal with removal, represent retained contacting metal with accompanying drawing labelling 31 and 32 respectively.Thus, contacting metal 31 and conducting metal 41 constitute the first electrode, contacting metal 32 and conducting metal 42 and constitute the second electrode (both positive and negative polarity that the first electrode and the second electrode are just known as).
Similarly, in the present embodiment, clear succinct in order to what illustrate, also omit the structure of passivation layer.
Embodiment 2
The present embodiment for example, introduces the method for metallising of double-side cell with double-side cell (in double-side cell, front and back is designed with electrode, so in the drawings according to usual custom, front indicated above, lower section represents the back side), specific as follows:
With reference to Fig. 6, form a PN, this PN includes the first conductivity type substrate 101, is arranged in the first conduction type doped layer 202 at this first conductivity type substrate 101 back side and is arranged in the second conduction type doped layer 201 in this first conductivity type substrate 101 front.
With reference to Fig. 7, respectively at the depositing contact metal on the front and back 301 and 302 of this PN.Wherein, this contacting metal is titanium, adopts evaporation mode to be formed.
With reference to Fig. 8, on the contacting metal of front and back, spray printing electrocondution slurry, to form the conducting metal of palisade, represents with accompanying drawing labelling 401 and 402 respectively respectively, and wherein this electrocondution slurry is the electrocondution slurry of process annealing or low-temperature setting, and low temperature is 200 DEG C.
With reference to Fig. 9, the contacting metal that the front and back of the structure that etch figures(s) 8 obtains is not covered by this conducting metal with removal, retained contacting metal is marked as 3011 and 3021 respectively.Thus contacting metal 3011 and conducting metal 401 collectively form front electrode (enlarged diagram referring to Figure 10), and contacting metal 3021 and conducting metal 402 collectively form backplate.
Although the foregoing describing the specific embodiment of the present invention, it will be appreciated by those of skill in the art that these are merely illustrative of, protection scope of the present invention is defined by the appended claims.Those skilled in the art is under the premise without departing substantially from principles of the invention and essence, it is possible to these embodiments are made various changes or modifications, but these change and amendment each falls within protection scope of the present invention.
Claims (9)
1. the method for metallising of a back contact battery, it is characterised in that comprise the following steps:
S1, form a PN, this PN includes the first conductivity type substrate, the back side of this first conductivity type substrate includes groove, and is arranged in the first conduction type doped region at the back side of this first conductivity type substrate and is arranged in the second conduction type doped region of this groove surfaces；
S2, on the back side of this PN depositing contact metal, this contacting metal covers the sidewall of this first conduction type doped region, this second conduction type doped region and this groove；
S3, on this contacting metal spray printing or Screen-printed conductive slurry to form conducting metal, normal direction from this first conductivity type substrate, this conducting metal be respectively formed in on this corresponding region of the first conduction type doped region and region corresponding with this second conductivity type regions, wherein this electrocondution slurry is the electrocondution slurry of process annealing or low-temperature setting, and low temperature is 80 DEG C-650 DEG C；
S4, structure obtained for etching step S3 the back side with the contacting metal that do not covered by this conducting metal of removal.
2. method for metallising as claimed in claim 1, it is characterised in that this contacting metal is selected from aluminum, titanium and nickel；And/or, this electrocondution slurry is selected from silver slurry and aluminium paste.
3. method for metallising as claimed in claim 1, it is characterised in that in step S2, the mode by being deposited with forms this contacting metal.
4. method for metallising as claimed in claim 1, it is characterised in that the thickness of this contacting metal is 1nm-5 μm, and/or, the thickness of this electrocondution slurry is 10nm-100 μm.
5. method for metallising as described in any one in claim 1-4, it is characterized in that, this groove is the wedge-shaped impression that narrow base, top are wide, wherein, see in the normal direction of this first conductivity type substrate, being the side close to this first conductivity type substrate bottom this, this top is the side away from this first conductivity type substrate.
6. the method for metallising of a double-side cell, it is characterised in that comprise the following steps:
T1, forming a PN, this PN includes the first conductivity type substrate, is arranged in the first conduction type doped layer at this first conductivity type substrate back side and is arranged in the second conduction type doped layer in this first conductivity type substrate front；
T2, respectively at the depositing contact metal on the front and back of this PN；
T3, on the contacting metal of front and back, spray printing or Screen-printed conductive slurry are to form the conducting metal of palisade respectively, and wherein this electrocondution slurry is the electrocondution slurry of process annealing or low-temperature setting, and low temperature is 80 DEG C-650 DEG C；
T4, structure obtained for etching step T3 front and back with the contacting metal that do not covered by this conducting metal of removal.
7. method for metallising as claimed in claim 6, it is characterised in that this contacting metal is selected from aluminum, titanium and nickel；And/or, this electrocondution slurry is selected from silver slurry and aluminium paste.
8. method for metallising as claimed in claim 6, it is characterised in that in step T2, the mode by being deposited with forms this contacting metal.
9. method for metallising as described in any one in claim 6-8, it is characterised in that the thickness of this contacting metal is 1nm-5 μm, and/or, the thickness of this electrocondution slurry is 10nm-100 μm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410766461.XA CN105742403A (en) | 2014-12-11 | 2014-12-11 | Back contact cell and metallization method for double-face cell |
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| CN201410766461.XA CN105742403A (en) | 2014-12-11 | 2014-12-11 | Back contact cell and metallization method for double-face cell |
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Cited By (2)
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| CN106328511A (en) * | 2016-10-11 | 2017-01-11 | 矽力杰半导体技术(杭州)有限公司 | Electrode fabrication method for semiconductor device |
| CN107851683A (en) * | 2015-09-25 | 2018-03-27 | 道达尔销售服务公司 | Conductive bar tape base mask for the metallization of semiconductor devices |
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