CN105575989B - Stop the method for metallic pollution in cmos image sensor HDP shallow trench filling process - Google Patents
Stop the method for metallic pollution in cmos image sensor HDP shallow trench filling process Download PDFInfo
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- CN105575989B CN105575989B CN201610173365.3A CN201610173365A CN105575989B CN 105575989 B CN105575989 B CN 105575989B CN 201610173365 A CN201610173365 A CN 201610173365A CN 105575989 B CN105575989 B CN 105575989B
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- Prior art keywords
- shallow trench
- image sensor
- hdp
- cmos image
- metallic pollution
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000005429 filling process Methods 0.000 title claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 56
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 29
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 24
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 abstract description 10
- 230000008021 deposition Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000003892 spreading Methods 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 229910001385 heavy metal Inorganic materials 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The present invention provides a kind of methods of metallic pollution in blocking cmos image sensor HDP shallow trench filling process, comprising: first step: etches shallow trench in the substrate；Second step: layer of silicon dioxide layer is grown in shallow ridges rooved face；Third step: decoupling nitrogen treatment is executed to silicon dioxide layer so that silica layer surface forms nitrogen treatment layer；Four steps: utilizing HDP deposited silicon dioxide layer, fills as shallow trench.
Description
Technical field
The present invention relates to field of semiconductor manufacture, it is more particularly related to a kind of blocking cmos image sensor
The method of metallic pollution in HDP (High Density Plasma, high-density plasma) shallow trench filling process.
Background technique
With the development of cmos image sensor, the requirement to its performance is higher and higher, in particular how reduces white picture
The quantity of element.Metallic pollution is one of the main reason for causing cmos image sensor white pixel high.According to 55nm CIS
The knot of ICPMS (icp ms) data of (Contact Image Sensor) process flow various processes
Fruit, HDP (High Density Plasma, high-density plasma) processing procedure due to there is the cyclic process of deposition and ise,
In the process of ise, metallic element can be sputtered from inside cavity, metallic pollution source is formed, in subsequent heat treatment process
It can be diffused into inside photodiode in the middle, will cause white pixel raising in this way.
In the cmos image sensor HDP shallow trench filling process of original process flow as shown in Figure 1, pixel region
It is interior, it is filled using HDP to form shallow trench isolation.Before HDP filling, one of linear silicon dioxide layer 104 can be done,
As shown in Figure 1.Then in the filling for carrying out HDP.Since HDP itself technology characteristics can introduce metallic pollution.At subsequent heat
In reason process, photodiode area 102 can be diffused laterally into, thus will form white pixel.The HDP for being covered on surface is thin
Film is due to groove etched 101 (the usually SI of hard mask layer that dives3N4) protection, so being not easy to expand to photodiode area 102
It dissipates.
Summary of the invention
The technical problem to be solved by the present invention is to for drawbacks described above exists in the prior art, providing one kind can hinder
Only metallic pollution is to spreading inside photodiode, thus the method for reducing the sum of white pixel.
In order to achieve the above technical purposes, according to the present invention, a kind of blocking cmos image sensor HDP shallow trench is provided
The method of metallic pollution in filling process, comprising:
First step: shallow trench is etched in the substrate；
Second step: layer of silicon dioxide layer is grown in shallow ridges rooved face；
Third step: decoupling nitrogen treatment is executed to silicon dioxide layer so that silica layer surface forms nitrogen treatment
Layer；
Four steps: utilizing HDP deposited silicon dioxide layer, fills as shallow trench.
Preferably, in the first step, shallow trench is etched using dry etching using the exposure mask of substrate surface.
Preferably, in the second step, growth silicon dioxide layer is generated using field steam.
Preferably, silicon dioxide layer with a thickness of between 90A between 130A.
Preferably, silicon dioxide layer with a thickness of 110A.
Preferably, nitrogen treatment layer with a thickness of 10A-15A.
Preferably, nitrogen treatment layer with a thickness of 12A-13A.
Preferably, nitrogen treatment layer contains SION.
Preferably, the main component of nitrogen treatment layer is SION.
Aiming at the problems existing in the prior art, the present invention executes at decoupling nitridation together before deposition HDP filling
Reason is to form a kind of main component for the nitrogen treatment layer of SION, using most of heavy metals in SiO2Diffusion velocity be higher than
The characteristic of SION prevents metallic pollution to spreading inside photodiode, to reduce the sum of white pixel.
Detailed description of the invention
In conjunction with attached drawing, and by reference to following detailed description, it will more easily have more complete understanding to the present invention
And its adjoint advantage and feature is more easily to understand, in which:
Fig. 1 schematically shows the signal of the cmos image sensor HDP shallow trench filling process of original process flow
Figure.
Fig. 2 schematically shows blocking cmos image sensor HDP shallow trench according to the preferred embodiment of the invention to fill out
The first step of the method for metallic pollution during filling.
Fig. 3 schematically shows blocking cmos image sensor HDP shallow trench according to the preferred embodiment of the invention and fills out
The second step of the method for metallic pollution during filling.
Fig. 4 schematically shows blocking cmos image sensor HDP shallow trench according to the preferred embodiment of the invention to fill out
The third step of the method for metallic pollution during filling.
Fig. 5 schematically shows blocking cmos image sensor HDP shallow trench according to the preferred embodiment of the invention and fills out
The four steps of the method for metallic pollution during filling.
Fig. 6 schematically shows blocking cmos image sensor HDP shallow trench according to the preferred embodiment of the invention and fills out
The complete intra structure that the method for metallic pollution is formed during filling.
It should be noted that attached drawing is not intended to limit the present invention for illustrating the present invention.Note that indicating that the attached drawing of structure can
It can be not necessarily drawn to scale.Also, in attached drawing, same or similar element indicates same or similar label.
Specific embodiment
In order to keep the contents of the present invention more clear and understandable, combined with specific embodiments below with attached drawing in of the invention
Appearance is described in detail.
Aiming at the problems existing in the prior art, the present invention executes at decoupling nitridation together before deposition HDP filling
Reason is to form a kind of main component for the nitrogen treatment layer of SION, using most of heavy metals in SiO2Diffusion velocity be higher than
The characteristic of SION prevents metallic pollution to spreading inside photodiode, to reduce the sum of white pixel.
Fig. 2 to Fig. 5 schematically shows blocking cmos image sensor HDP shallow ridges according to the preferred embodiment of the invention
Each step of the method for metallic pollution in slot filling process.
As shown in Figures 2 to 5, blocking cmos image sensor HDP shallow trench filling according to the preferred embodiment of the invention
The method of metallic pollution includes: in the process
First step S1: shallow trench 107 is etched in substrate 103, as shown in Figure 2；For example, in first step S1,
The exposure mask 101 that can use 103 surface of substrate etches shallow trench 107 using dry etching.
Second step S2: layer of silicon dioxide layer 105 is grown on 107 surface of shallow trench, as shown in Figure 3；For example, second
In step S2, it can use steam and generate (in-situsteamgeneration, ISSG) growth silicon dioxide layer 105；It is excellent
Selection of land, silicon dioxide layer 105 with a thickness of between 90A between 130A.Preferably, silicon dioxide layer 105 with a thickness of 110A.
Third step S3: executing decoupling nitrogen treatment to silicon dioxide layer 105 so that 105 surface of silicon dioxide layer is formed
Nitrogen treatment layer 106, as shown in Figure 4.Preferably, nitrogen treatment layer 106 with a thickness of 10A-15A.It is further preferred that nitridation
Process layer 106 with a thickness of 12A-13A.Wherein, nitrogen treatment layer 106 contains SION.More specifically, nitrogen treatment layer 106
Main component is SION.
Four steps S4: HDP (High Density Plasma, high-density plasma) deposited silicon dioxide layer is utilized
104, it is filled as shallow trench, as shown in Figure 6.
Fig. 2 to Fig. 5 schematically shows the step related to the principle of the present invention, and actual structure should be such as Fig. 6
It is shown, photodiode area 102 is formed in silicon wafer.But the formation of photodiode area 102 and the prior art
Method is the same, therefore omits descriptions thereof herein.
In short, metallic pollution be the main reason for causing cmos image sensor white pixel high it.The processing procedure of HDP is due to having
The cyclic process of deposition and ise can sputter metallic element from inside cavity, will form gold in the process of ise
Belong to pollution sources, can be diffused into inside photodiode in subsequent heat treatment process, will cause white pixel raising in this way.This
Invention mainly using deposition HDP filling before, does together decoupling nitrogen treatment, using most of heavy metals SiO2 expansion
Scattered speed is higher than SION, to prevent metallic pollution to spreading inside photodiode, to reduce the sum of white pixel.
In addition, it should be noted that, unless stated otherwise or point out, the otherwise term " first " in specification, "
Two ", the descriptions such as " third " are used only for distinguishing various components, element, the step etc. in specification, each without being intended to indicate that
Component, element, the logical relation between step or ordinal relation etc..
It is understood that although the present invention has been disclosed in the preferred embodiments as above, above-described embodiment not to
Limit the present invention.For any person skilled in the art, technical solution of the present invention ambit is not being departed from
Under, many possible changes and modifications, or modification all are made to technical solution of the present invention using the technology contents of the disclosure above
For the equivalent embodiment of equivalent variations.Therefore, anything that does not depart from the technical scheme of the invention, technology according to the present invention are real
It verifies any simple modifications, equivalents, and modifications made for any of the above embodiments, still falls within technical solution of the present invention protection
In range.
Claims (9)
1. a kind of method for stopping metallic pollution in cmos image sensor HDP shallow trench filling process, characterized by comprising:
First step: shallow trench is etched in the substrate；
Second step: layer of silicon dioxide layer is grown in shallow ridges rooved face；
Third step: decoupling nitrogen treatment is executed to silicon dioxide layer so that silica layer surface forms nitrogen treatment layer；
Four steps: utilizing HDP deposited silicon dioxide layer, fills as shallow trench；
Wherein, metallic pollution is generated in the HDP deposition process, the nitrogen treatment layer is to prevent the metallic pollution to institute
State diffusion inside the photodiode of cmos image sensor.
2. the method according to claim 1 for stopping metallic pollution in cmos image sensor HDP shallow trench filling process,
It is characterized in that, in the first step, etching shallow trench using dry etching using the exposure mask of substrate surface.
3. the side according to claim 1 or 2 for stopping metallic pollution in cmos image sensor HDP shallow trench filling process
Method, which is characterized in that in the second step, generate growth silicon dioxide layer using field steam.
4. the side according to claim 1 or 2 for stopping metallic pollution in cmos image sensor HDP shallow trench filling process
Method, which is characterized in that silicon dioxide layer with a thickness of between 90A between 130A.
5. the side according to claim 1 or 2 for stopping metallic pollution in cmos image sensor HDP shallow trench filling process
Method, which is characterized in that silicon dioxide layer with a thickness of 110A.
6. the side according to claim 1 or 2 for stopping metallic pollution in cmos image sensor HDP shallow trench filling process
Method, which is characterized in that nitrogen treatment layer with a thickness of 10A-15A.
7. the side according to claim 1 or 2 for stopping metallic pollution in cmos image sensor HDP shallow trench filling process
Method, which is characterized in that nitrogen treatment layer with a thickness of 12A-13A.
8. the side according to claim 1 or 2 for stopping metallic pollution in cmos image sensor HDP shallow trench filling process
Method, which is characterized in that nitrogen treatment layer contains SION.
9. the side according to claim 1 or 2 for stopping metallic pollution in cmos image sensor HDP shallow trench filling process
Method, which is characterized in that the main component of nitrogen treatment layer is SION.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610173365.3A CN105575989B (en) | 2016-03-24 | 2016-03-24 | Stop the method for metallic pollution in cmos image sensor HDP shallow trench filling process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610173365.3A CN105575989B (en) | 2016-03-24 | 2016-03-24 | Stop the method for metallic pollution in cmos image sensor HDP shallow trench filling process |
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| Publication Number | Publication Date |
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| CN105575989A CN105575989A (en) | 2016-05-11 |
| CN105575989B true CN105575989B (en) | 2019-03-12 |
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| JP2001085511A (en) * | 1999-09-14 | 2001-03-30 | Toshiba Corp | Element isolation method |
| US8035142B2 (en) * | 2004-07-08 | 2011-10-11 | Micron Technology, Inc. | Deuterated structures for image sensors and methods for forming the same |
| US7799637B2 (en) * | 2006-06-26 | 2010-09-21 | Sandisk Corporation | Scaled dielectric enabled by stack sidewall process |
| CN101231970B (en) * | 2008-01-17 | 2012-01-18 | 复旦大学 | Method for manufacturing integrated diode and CuxO resistance memory |
| CN102054753B (en) * | 2009-11-10 | 2013-03-13 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for dual-inlay structure |
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