CN105355724B - Heat treatment method of perovskite thin film and method for preparing solar cell based on technology - Google Patents
Heat treatment method of perovskite thin film and method for preparing solar cell based on technology Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 51
- 239000010409 thin film Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 35
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 11
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 9
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 8
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000010408 film Substances 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 6
- 229930188620 butyrolactone Natural products 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000003960 organic solvent Substances 0.000 claims description 4
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 3
- 229920001167 Poly(triaryl amine) Polymers 0.000 claims description 2
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 230000009466 transformation Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000000084 colloidal system Substances 0.000 description 4
- 238000003980 solgel method Methods 0.000 description 4
- 238000000280 densification Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 238000002083 X-ray spectrum Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
Disclosed is a heat treatment method of a perovskite thin film. The heat treatment method is characterized in that a microwave is adopted to perform heat treatment on the perovskite thin film, the microwave adopts a mixed-mode mode, the frequency is 2.45GHz, microwave power is 80-640w, and processing time is 2.5-15min. The invention provides a brand-new heating technology to prepare the perovskite thin film, a microwave heating method is adopted to prepare the perovskite thin film, the problems of long consumed time, the low energy usage rate and insufficient contact heating of a traditional heating plate and furnace chamber heating method are effectively solved, heating time can be greatly shortened, non-contact heating is adopted, the energy usage rate can also be effectively improved, an influence of environment humidity on the perovskite thin film is reduced, and performance of a perovskite solar cell prepared on the basis of the technology is approximate to performance of a solar cell prepared by a traditional heating mode.
Description
Technical field
The invention belongs to technical field of solar batteries, more particularly to a kind of technology of microwave heating treatment perovskite thin film
And its application in solar cells.
Background technology
With global fossil energy exhausted and greenhouse effect and environmental pollution increasingly sharpen, clean energy resource and low-carbon (LC) Jing
Ji has become the problem of countries in the world important research.Solar battery technology is greatly paid close attention to.Wherein at present on the market
Silica-based solar cell due to preparation technology require it is harsh, cause it is high using cost, people sight turn to it is low into
This solar cell material and technology.Novel thin film solaode is got over due to cheap cost and large-area technology of preparing
It is subject to people's attention to get over.Organo metallic material with Ca-Ti ore type layer structure as a kind of high absorption coefficient of light and
Material with good electrical performance, is paid close attention to by researcher.The solar-electricity of perovskite material was based on over the past two years
Pool technology quickly grows.At present the efficiency of highest perovskite battery has broken through 20% in laboratory, fullys meet business
The requirement of change.
Used in laboratory at most at present, the material that efficiency report highest perovskite battery is used is CH3NH3PbI3– xClx,(0<X<3).But this material needs prolonged heat treated just to make the precursor of perovskite solution be transformed into crystallization
Perovskite material, due to heat time heating time it is long, for the destruction for preventing humidity from growing to perovskite thin film, typically must be in protection
Carry out in gaseous environment.Perovskite precursor solution is generally according to PbCl2:CH3NH3I=1:3 molar ratios are configured and are dissolved in be had
In machine solvent.Not only time-consuming but also energy utilization rate is extremely low for traditional heating plate and constant temperature oven mode of heating, and needs to carry
For directly thermo-contact heating.
The content of the invention
First technical problem to be solved by this invention is to provide a kind of heat treatment method of perovskite thin film, using micro-
Wave heating, is capable of achieving perovskite thin film quickly, noncontact heating.
Second technical problem to be solved by this invention is to provide one kind and prepares the sun using above-mentioned heat treatment method
The method of energy battery.
The present invention solve technical scheme that above-mentioned first technical problem adopted for：A kind of heat treatment of perovskite thin film
Method, it is characterised in that：Heat treatment is carried out to perovskite thin film using microwave, microwave power is 80～640w, and process time is
2.5～15 minutes.
Used as improvement, the material of the perovskite thin film is CH3NH3PbI3–xClx,(0<X<3), the elder generation of perovskite thin film
It is PbCl to drive thing solution2And CH3NH3I is according to 1:2.5～3.5 mol ratio solution.
Preferably, the microwave power is 320W～560W, process time 3～10 minutes.Microwave adopts mixed mould pattern,
Frequency is 2.45GHz.It is preferred that microwave power is 320W, process time 6 minutes.
The present invention solve technical scheme that above-mentioned second technical problem adopted for：A kind of preparation side of solaode
Method, it is characterised in that comprise the following steps：
1) glass substrate that electron transfer layer is covered in the conductive layer FTO for cleaning is prepared first with spin coating or evaporation
On；
2) according to 1:2.5～3.5 molar ratio is by PbCl2And CH3NH3I is mixed in organic solvent, is configured to quality
Concentration is 35～45% precursor solution, is then spin coated onto on electric transmission tunic, carries out hot place using microwave in atmosphere
Reason, forms perovskite thin film, 80～640w of microwave power, and process time is 2.5～15 minutes；
3) the spin coating hole transmission layer on calcium titanium ore bed again；
4) finally using vapour deposition method evaporation metal electrode as the back electrode of battery, the preparation of perovskite battery is completed.
Preferably, the step 1) electron transfer layer material be TiO2、ZnO2, PCBM or C60；Thickness is 40-
60nm。
Preferably, the step 2) PbCl2And CH3NH3The mol ratio of I is 1:3, the mass concentration of precursor solution
For 40%.
Preferably, the step 2) organic solvent be dimethyl formamide solution or butyrolactone solution；Microwave is carried out
Microwave power 320W～the 560W of heat treatment, process time 3～10 minutes.Using mixed mould pattern, frequency is 2.45GHz to microwave.
Further preferably, the step 3) hole transmission layer be sprio-OMeTAD, P3HT and PTAA in it is a kind of or several
Material is planted, thickness is 20-500nm.
Further preferably, the step 4) metal electrode be Au electrodes or Ag electrodes, thickness is 100-200nm.
Compared with prior art, it is an advantage of the current invention that：It is thin perovskite to be prepared there is provided a kind of brand-new heating technique
Film, the perovskite thin film prepared using microwave heating method efficiently solves traditional heating plate and furnace chamber heating means consumption
Duration, energy utilization rate are low, contact underheated problem, can not only significantly reduce time, the noncontact heating of heating, moreover it is possible to
The service efficiency of energy is effectively improved, reduces impact of the ambient humidity to perovskite film forming, and the calcium prepared based on this technology
Efficiency of the performance of titanium ore solar energy close to the solaode prepared with traditional heating mode.
Description of the drawings
Fig. 1 (a)-Fig. 1 (f) be the present invention provide under microwave power 320W, the life of perovskite thin film in different time
The optical morphology figure of long color change trend；
Fig. 2 be the embodiment of the present invention 2 provide under microwave power 320W, the perovskite thin film electricity prepared in different time
The i-v curve in pond；
Fig. 3 is 60% time perovskite Jing after different heating mode is processed of humidity in atmosphere that the embodiment of the present invention 5 is provided
Traditional heating processes (HAAC), protects in glove box nitrogen in the J-V curve charts of thin film, wherein microwave treatment (MRAC), air
Lower traditional heating processes (HAIA)；
Fig. 4 is the abosrption spectrogram of perovskite thin film Jing after different heating mode is processed that the embodiment of the present invention 5 is provided, its
In (a) be 60% time microwave treatment of humidity in air, (b) process for traditional heating in air, (c) be to protect in glove box nitrogen
Lower traditional heating is processed；
Fig. 5 is the perovskite that 60% time Jing different heating mode of humidity in atmosphere that the embodiment of the present invention 5 is provided is processed
The X-ray diffractogram of thin film, wherein microwave treatment (MRAC), traditional heating processes (HAAC) in air, protects in glove box nitrogen
The lower traditional heating of shield processes (HAIA)；
Fig. 6 is 60% time perovskite Jing after different heating mode is processed of humidity in atmosphere that the embodiment of the present invention 5 is provided
The surface scan Electronic Speculum test chart of thin film, wherein (a) is 60% time microwave treatment of humidity in air, (b) adds for tradition in air
Heat treatment, is (c) that traditional heating is processed under the protection of glove box nitrogen；
Fig. 7 be the present invention provide under microwave power 320W, the graph of a relation of different substrate temperature tests and time.
Specific embodiment
The present invention is described in further detail below in conjunction with accompanying drawing embodiment.
Embodiment 1
First, sol-gel method prepares TiO2Colloid, is spin-coated in the glass substrate of the conductive layer FTO for cleaning, so
Afterwards 500 DEG C of heat treated 30min, obtain the electron transfer layer TiO of densification2Thin film, thickness is about 40nm.According to molar ratio 1:
3 by PbCl2And CH3NH3I is mixed in the solution of butyrolactone, and configuration quality ratio is 40%, is then spin coated onto in TiO2On film.In sky
Microwave power 80W in gas, is processed 14 minutes, and using mixed mould pattern, frequency is 2.45GHz to microwave, forms perovskite thin film.Exist again
The sprio-OMeTAD hole transmission layers of spin coating doping on calcium titanium ore bed, thickness is about 400nm, is finally deposited with Au electrodes, thickness
About 100nm, completes the preparation of perovskite battery.The photoelectric transformation efficiency that efficiency is 9.04% is obtained, other performance parameter is shown in
Subordinate list lattice 1.
Embodiment 2
First, sol-gel method prepares TiO2Colloid, is spin-coated in the glass substrate of the conductive layer FTO for cleaning, so
Afterwards 500 DEG C of heat treated 30min, obtain the electron transfer layer TiO of densification2Thin film, thickness is about 40nm.According to molar ratio 1:
3 by PbCl2And CH3NH3I is mixed in the solution of dimethylformamide (DMF), and configuration quality ratio is 40%, Ran Houxuan
It is coated in TiO2On film.In atmosphere microwave power 320W, is processed respectively 3,4,5,6,8,10 minutes, and microwave adopts mixed mould pattern,
Frequency is 2.45GHz, forms perovskite thin film.The color change of perovskite thin film is shown in accompanying drawing 1.Again spin coating is mixed on calcium titanium ore bed
Miscellaneous sprio-OMeTAD hole transmission layers, thickness is about 400nm, is finally deposited with Au electrodes, and thickness is about 120nm, completes calcium
The preparation of titanium ore battery.The peak efficiency that the perovskite battery processed at 6 minutes is obtained is 10.29%, corresponding current/voltage
Curve is shown in accompanying drawing 2.
Embodiment 3
First, sol-gel method prepares TiO2Colloid, is spin-coated in the glass substrate of the conductive layer FTO for cleaning, so
Afterwards 500 DEG C of heat treated 30min, obtain the electron transfer layer TiO of densification2Thin film, thickness is about 40nm.According to molar ratio 1:
3 by PbCl2And CH3NH3I is mixed in the solution of butyrolactone, and configuration quality ratio is 40%, is then spin coated onto in TiO2On film.In sky
Microwave power 480W in gas, is processed 3 minutes, and using mixed mould pattern, frequency is 2.45GHz to microwave, forms perovskite thin film.Exist again
The sprio-OMeTAD hole transmission layers of spin coating doping on calcium titanium ore bed, thickness is about 400nm, is finally deposited with Au electrodes, thickness
About 120nm, completes the preparation of perovskite battery.Obtain the photoelectric transformation efficiency that efficiency is 8..93%, other performance ginseng
Number is shown in Table lattice 1.
Embodiment 4
First, sol-gel method prepares ZnO2Colloid, is spin-coated in the glass substrate of the conductive layer FTO for cleaning, so
Afterwards 100 DEG C of heat treated 30min, obtain electron transfer layer ZnO2Thin film, thickness is about 50nm.According to molar ratio 1:3 will
PbCl2And CH3NH3I is mixed in the solution of butyrolactone, and configuration quality ratio is 40%, is then spin coated onto in ZnO2On thin film.In sky
Microwave power 560W in gas, is processed 3 minutes, and using mixed mould pattern, frequency is 2.45GHz to microwave, forms perovskite thin film.Exist again
The P3HT hole transmission layers of spin coating doping on calcium titanium ore bed, thickness is about 20nm, is finally deposited with Ag electrodes, and thickness is about 100nm,
Complete the preparation of perovskite battery.The photoelectric transformation efficiency that efficiency is 6.59% is obtained, other performance parameter is shown in Table lattice 1.
Embodiment 5
In air humidity 60%, microwave condition：320W, 90 points of heater plate in the case of 6 minutes, with traditional heating
Clock process, and under the heater plate of nitrogen protection traditional heating is processed for 90 minutes in glove box, the solar-electricity of preparation
Pond Performance comparision.In air conventional heating methods prepare battery open circuit voltage (Voc) be 0.82V, short-circuit current density (Jsc)
For 9.71mA/cm2, fill factor, curve factor (FF) is 0.65, and photoelectric transformation efficiency (PCE) is 5.18%, and microwave technology prepares battery PCE
=10.29%, Voc=0.92V, Jsc=19.98mA/cm2, FF=0.56.The battery that traditional heating is prepared in glove box
PCE=11.08%, Voc=0.92V, Jsc=20.07mA/cm2, FF=0.60.Accompanying drawing 3 is the battery of acquisition under the conditions of three
The i-v curve of peak performance.Accompanying drawing 4 is the absorption spectrum of acquisition under the conditions of three, and accompanying drawing 5 is generation under the conditions of three
Perovskite X-ray spectrum, accompanying drawing 6 be three under the conditions of generate perovskite thin film scanning electron microscope surface topography.
Form 1. different time using microwave power difference in the case of, the performance of the perovskite thin film battery after process
Parameter.
| Power(W) | Time(min) | Jsc(mA/cm2) | Voc(V) | FF | PCE (%) |
| 80 | 14 | 17.71 | 0.92 | 55.5% | 9.04 |
| 160 | 10 | 18.74 | 0.85 | 49.5% | 7.89 |
| 240 | 8 | 18.74 | 0.83 | 57.9% | 9.00 |
| 320 | 5 | 20.51 | 0.90 | 48.3% | 8.93 |
| 400 | 4 | 18.43 | 0.88 | 50.5% | 8.20 |
| 480 | 3 | 17.64 | 0.89 | 50.6% | 7.94 |
| 560 | 3 | 16.91 | 0.83 | 46.9% | 6.59 |
| 640 | 2.5 | 18.79 | 0.89 | 47.0% | 7.87 |
Knowable to the photoelectric transformation efficiency result of the solar cell of above-mentioned specific embodiment, the power of microwave and time
Regulation can all affect the final efficiency of battery.By rational selection time (6 minutes) and power (320W).The sun of the present invention
The photoelectric transformation efficiency of battery reaches 10.29%, is close to traditional heating plate under the protection of in glove box nitrogen and heats 90 minutes
Battery efficiency (11.08%), is far longer than the battery efficiency (5.18%) heated under traditional approach.It is of the invention as can be seen here
Practical value of the microwave treatment technology in perovskite thin film battery.
Although being described in detail with regard to example embodiment and its advantage, it should be understood that without departing from the present invention spirit and
In the case of protection domain defined in the appended claims, various change, substitutions and modifications can be carried out to these embodiments.It is right
In other examples, one of ordinary skill in the art should be readily appreciated that while keeping in the scope of the present invention, technique
The order of step can change.
Claims (7)
1. a kind of preparation method of solaode, it is characterised in that comprise the following steps：
1) prepare electron transfer layer first with the method for spin coating or evaporation, be covered in cleaned with conductive layer FTO
Glass substrate on；
2) according to 1:2.5～3.5 molar ratio is by PbCl2And CH3NH3I is mixed in organic solvent, is configured to mass concentration
For 35～45% precursor solution, it is then spin coated onto in TiO2On film, in atmosphere heat treatment is carried out using microwave, form calcium titanium
Ore deposit thin film, 80～640w of microwave power, process time is 2.5～15 minutes；
3) the spin coating hole transmission layer on calcium titanium ore bed again；
4) finally using vapour deposition method evaporation metal electrode as the back electrode of battery, the preparation of perovskite battery is completed.
2. method according to claim 1, it is characterised in that：The step 1) electron transfer layer material be TiO2、
ZnO2, PCBM or C60；Thickness is 40-60nm.
3. method according to claim 1, it is characterised in that：The step 2) PbCl2And CH3NH3The mol ratio of I is
1:3, the mass concentration of precursor solution is 40%.
4. method according to claim 1, it is characterised in that：The step 2) organic solvent be dimethylformamide it is molten
Liquid or butyrolactone solution.
5. method according to claim 1, it is characterised in that：The step 2) microwave carry out the microwave power of heat treatment
320W～560W, process time 3～10 minutes, using mixed mould pattern, frequency is 2.45GHz to microwave.
6. method according to claim 1, it is characterised in that：The step 3) hole transmission layer be sprio-
One or several materials in OMeTAD, P3HT and PTAA, thickness is 20-500nm.
7. method according to claim 1, it is characterised in that：The step 4) metal electrode be Au electrodes or Ag it is electric
Pole, thickness is 100-200nm.
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| WO2018000294A1 (en) * | 2016-06-30 | 2018-01-04 | The University Of Hong Kong | An organolead halide perovskite film and the method of making the same |
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| US5462009A (en) * | 1992-11-06 | 1995-10-31 | The Boeing Company | Method and apparatus for producing perovskite compositions |
| CN101723663B (en) * | 2009-12-22 | 2012-07-04 | 河北理工大学 | Microwave medium ceramics with low temperature sintering perovskite structure and preparation method thereof |
| KR20150113014A (en) * | 2013-01-15 | 2015-10-07 | 바스프 에스이 | Triangulene oligomers and polymers and their use as hole conducting material |
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