CN105281716A - High-voltage nanosecond pulse generator based on laminated Blumlein strip lines - Google Patents
High-voltage nanosecond pulse generator based on laminated Blumlein strip lines Download PDFInfo
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Abstract
The invention discloses a high-voltage nanosecond pulse generator based on laminated Blumlein strip lines. The high-voltage nanosecond pulse generator includes a power supply system, a solid state switching system, a control circuit, and the laminated Blumlein strip lines. Actually, the pulse generator is used to generate a pulse electric filed on a matched load by using strip lines which are normally used in the communication industry to form wave refraction and reflection. The generator uses a multi-stage solid state serial switch block as a system switch, and forms pulse square wave in a strip line system by controlling the on and off of MOSFETs, and can realize the system output impedance modularization change in a small space through the parallel lamination of multi-stage Blumlein strip line PCB boards, the nanosecond pulse voltage outputting at the two ends of different biological loads has the following parameters: the amplitude adjustable range from 0 to 1000 volts, the pulse width of 100ns, and rising edge of 30ns, and the repeated frequency reaching 100 even 1000 Hz, and moreover, by means of parallel lamination, the generator provided is suitable for the application conditions of a plurality of loads in the biological and medical experiments and can be applied to the research of nanosecond pulse electric field biological effects.
Description
Technical field
The present invention relates to field of bio-electromagnetic technology, specific design is a kind of based on stacked Blumlein stripline high-voltage nanosecond pulse generator.
Background technology
Impulse electric field biological medical effect causes the great interest of domestic and international researcher, can bring out biological cell membrane reversible, irreversible electroporation occurs according to the difference of Microsecond grade impulse electric field strength.Further, when impulse electric field width reach ns level, electric field strength reach MV/m level time, generation will be induced obviously to be different from the cell biocompatibility of microsecond pulse electric field: although obvious electroporation phenomenon does not occur surface of cell membrane, but there is a series of functional change in cell interior (as nucleus, mitochondria etc.), cell death inducing simultaneously.This nanosecond pulsed electric field, when non-toxic chemotherapeutics participates in, makes tumor tissues reduce even to disappear, avoid inflammation, ulcer and side effects of pharmaceutical drugs simultaneously by apoptosis-induced.For probing into nanosecond pulsed electric field to endocellular electricity Treatment Effects mechanism, need to design corresponding high pressure ns level square-wave pulse generator.
In biomedical applications, the normal coaxial line that adopts makes millimicrosecond pulse generator, but the existence of the millimicrosecond pulse generator of this type takies the larger drawback of volume.To mate 10 Ω electricity revolving cups in biological cell medical experiment, square-wave pulse for generation 100ns pulsewidth then needs 2 groups of coaxial lines and joint group (often group forms 5 Ω impedances and joint group by 50 Ω impedance parallel connections of 10 10m length) forms Blumlein transmission line system, need 50 Ω coaxial lines of 200m length so altogether, the volume of obvious millimicrosecond pulse generator will be extremely huge.
Although the high-voltage nanosecond pulse generator based on microstrip transmission line effectively to meet in biomedicine experiment for millimicrosecond pulse generator miniaturized, compact and portable requirement, but microstrip transmission line itself also has some shortcomings part: 1. microstrip transmission line conductors band needs to contact with air, therefore, the stacked number of plies of Blumlein type multilayer microstrip transmission line can only reach at most 2 layers of microstrip transmission line series connection; 2. the medium between microstrip transmission line conductors band is air, between conductor belt, easily edge flashing occurs in electric field distortion situation; 3. in 0 ~ 4GHz frequency range, the communication mode of electromagnetic wave in microstrip transmission line is Quasi-TEM mode, causes microstrip transmission line dimensional parameters that approximate calculation and actual conditions can only be taked to have difference.In addition, not yet propose at present for different loads in biomedicine experiment (animal tissue of 10 Ω electricity revolving cups, 20 Ω electricity revolving cups, 50 Ω electricity revolving cups and Ω impedance up to a hundred) modularization impedance matching solution, mostly made the special microstrip transmission line of impedance matching for often kind of different loads, this is obviously unfavorable for that economy is considered.
Summary of the invention
The object of the invention is for solving above-mentioned difficulties, there is provided a kind of based on stacked Blumlein stripline high-voltage nanosecond pulse generator, this device is by charging to Blumlein strip line, introduce voltage wave by switch, produce ripple catadioptric load two ends coating-forming voltage difference thus formed voltage pulse output.This device utilize multi-layer PCB strip line to replace traditional coaxial transmission line and be set to space layer stack structure thus can realize compared with under small size can stacked stripline design, have developed and there is compact, portable, light-weighted high-voltage nanosecond pulse generator, and obtain a series of output impedance to mate different loads in biomedicine experiment by the stacked parallel way in multistage Blumlein strip line space, be convenient to the biological medical effect under the effect of research nanosecond pulsed electric field.
The technical scheme adopted for realizing the object of the invention is such, a kind of based on parallel connection stacked Blumlein stripline high-voltage nanosecond pulse generator, be in fact a kind of to utilize in the communications industry conventional strip line to form ripple catadioptric thus on the load of coupling, produce impulse electric field, simultaneously in order to form a square wave, a series of output impedance can be obtained to mate different loads in biomedicine experiment by the stacked parallel way in multistage Blumlein strip line space.
A kind of based on stacked Blumlein stripline high-voltage nanosecond pulse generator, comprise power-supply system, solid state switching system, control circuit and stacked Blumlein strip line.
Described power-supply system, comprises high-voltage DC power supply and charging resistor.
Described solid state switching system comprises :+15VDC/DC isolation module ,+15VDC/+5VDC modular converter, fiber optic receiver, driving chip and MOSFETs tandem tap group.15V voltage transitions is 5V voltage by described modular converter.Described MOSFETs tandem tap group is in series by two switch mosfets.
Described control circuit comprises signal generator, optical fibre driver, fiber optic emitter and 1 point of 2 optical fiber splitter.
Described stacked Blumlein strip line is that the parallel connection of multiple PCB stripline board is laminated.Described PCB stripline board comprises ground floor top layer ground plane, second layer strip line wiring layer, third layer ground plane, and quadriply belt shape line wiring layer and layer 5 bottom are isolated by FR-4 insulating material for every layer.Described strip line comprises the first strip line and the second strip line, and strip line is conductor belt, and material is copper.First strip line comprises ground floor top layer first strip line ground plane, second layer wiring layer first strip line and third layer first strip line ground plane, the 4th layer of wiring layer first strip line, layer 5 bottom first strip line ground plane.Second strip line comprises ground floor top layer second strip line ground plane, second layer wiring layer second strip line, third layer connect the second strip line stratum, the 4th layer of wiring layer second strip line and layer 5 bottom second strip line ground plane.First and third, five layer of first strip line ground plane and first and third, five layer of second strip line ground plane are arranged in left and right half-plane, and centre is isolated by FR-4 insulating material.Second layer wiring layer first strip line becomes in " S " winding type layout at the left and right half-plane of place layer with second layer wiring layer second strip line, and centre is isolated by FR-4 insulating material.4th layer of wiring layer first strip line becomes in " S " winding type layout at the left and right half-plane of place layer with the 4th layer of wiring layer second strip line, and centre is isolated by FR-4 insulating material.
Utilize via hole to connect second layer wiring layer first stripline end and the 4th layer of wiring layer first stripline end are connected in series, utilize copper strips to connect up the 4th layer of wiring layer first strip line head end is connected with second layer wiring layer second strip line head end simultaneously, second layer wiring layer second stripline end is by via hole the 4th layer of wiring layer second stripline end series connection, and the 4th layer of wiring layer second strip line head end is unsettled as free end.The head end of second layer wiring layer first strip line, as the terminals of the first strip line, utilizes via hole by first and third, the five layers of ground plane parallel connection of the first strip line, by first and third of the second strip line, five layers of ground plane parallel connection.
The positive pole of described high-voltage DC power supply is connected with charging resistor one end by wire, the other end of charging resistor comprises two parallel branches, article one, branch road is connected by the drain electrode of wire with the MOSFETs tandem tap group of solid state switching system, and the earth polar S of described switches set is connected to high-voltage DC power supply earth polar and forms a loop.Another branch road is connected with the first stripline conductors band terminals of stacked Blumlein strip line.Load one end is connected in the ground plane of the second strip line, and the other end is connected in the ground of the first strip line, by wire, the ground plane of the first strip line is taken back the formation loop, ground of high-voltage DC power supply simultaneously.In order to mate different loads, need to utilize copper post by parallel for end that is in parallel for the first strip line head end of every block pcb board, the second stripline conductors according to load, and the first strip line of every block pcb board and the ground connection of the second strip line in parallel separately.
The signal output part of described signal generator is connected with the input of optical fibre driver, and the pulse control signal that signal generator processing produces is transferred to optical fibre driver.The output of optical fibre driver is connected with the input of fiber optic emitter, and the drive singal that Transmission Fibers reflector exports according to optical fibre driver carries out electrical/optical conversion.The output of fiber optic emitter and the input of fiber optic receiver, by Fiber connection, realize the transmission of light signal.1 point of 2 optical fiber can control 2 switch mosfets simultaneously, thus improves synchronism.
The power end of described driving chip is connected with the output of isolation module by wire, and the power input of isolation module is connected with 15V pressure-wire, and isolation module is that driving chip is powered, and circuit board and power supply are isolated by isolation module simultaneously.The output of driving chip is connected with the grid G of described MOSFETs tandem tap group, and driving chip provides the current drives up to 30A to MOSFETs tandem tap group.As shown in Figure 4, signal controls 2 switch mosfets simultaneously, and the output D pole of the first switch connects together to be formed with the S level of second switch and connects.The signal input part of driving chip is connected with the signal output part of fiber optic receiver, and fiber optic receiver receives and controls light signal and be converted to the signal of telecommunication to be input to driving chip.The power input of described fiber optic receiver is connected with the output of modular converter by wire, and the power end of modular converter is connected with 15V power line, and 15V voltage transitions is that 5V voltage is powered to fiber optic receiver by modular converter.
MOSFETs tandem tap group is then mainly used to the copper strips ground connection of stacked Blumlein strip line, namely form wave process, therefore after the drain electrode of MOSFETs tandem tap group needs to be connected on charging resistor equally, be connected with the porch of Blumlein strip line pcb board, high-voltage DC power supply, Blumlein strip line and solid state switching system ground connection needs connect together simultaneously.
Further, 220V alternating current is converted to the direct voltage of ceiling voltage 4kV by described high-voltage power module, and maximum direct current is 60mA.
Further, described stacked Blumlein strip line is a kind of pulse forming unit of designed, designed, simultaneously in the perforate of every block pcb board surrounding, utilizes copper post to realize the parallel connection of pcb board stacked, reaches the object changing transmission line impedance, thus mate different loads.
After the present invention adopts above technical scheme, mainly there is following beneficial effect:
1, the strip line that the present invention adopts equally has complanation structure with microstrip transmission line, can replace conventional coaxial line and effectively reduce millimicrosecond pulse generator volume.In addition, its characteristic impedance variable range is comparatively large, conveniently designs according to actual needs.
2, the stripline design that the present invention adopts can be avoided occurring edge flashing situation between conductor belt, and the communication mode of electromagnetic wave in strip line is the TEM ripple more easily carrying out theory calculate.In addition, conductor belt due to microstrip transmission line needs to contact with air, therefore the single-stage microstrip transmission line utilizable PCB number of plies limited (utilizing at most 4 layers of PCB to carry out cabling to form the two-layer microstrip transmission line of end face and bottom surface), reduces system area occupied under utilizing more multi-layered PCB arrangement of conductors band to realize identical square-wave pulse output condition under the condition that strip line then can allow at processing conditions in theory at double.
3, the present invention adopts different progression Blumlein strip line Spatial Parallel overlapped way, can realize a series of output impedance with adaptive 10 Ω, 20 Ω and 50 Ω electricity revolving cup, extend the versatility of Blumlein strip line.
4, MOSFETs switches set is utilized can to realize rising edge of a pulse fast in the present invention, therefore, it is possible to relatively easily produce the voltage wave of 50ns pulsewidth, operating frequency also improves greatly relative to spark switch simultaneously, size according to DC power supply power can calculate different operating frequencies, easily reaches thousand hertz.
Accompanying drawing explanation
The nonlimiting examples that device of the present invention can be provided by accompanying drawing further illustrates.
Fig. 1 is theory diagram of the present invention;
Fig. 2 is circuit theory diagrams of the present invention;
Fig. 3 is solid state switching system schematic diagram figure of the present invention;
Fig. 4 is MOSFET tandem tap group schematic diagram of the present invention;
Fig. 5 is control signal schematic diagram of the present invention;
Fig. 6 is the Blumlein stripline conductors band distribution schematic diagram of example 1;
Fig. 7 is the Blumlein strip line load wiring schematic diagram of example 1;
Fig. 8 is the schematic cross-section of the Blumlein strip line of example 1;
Fig. 9 is the stacked schematic diagram of Blumlein strip line pcb board of example 1;
In figure: 101 is high-voltage DC power supply, 102 is charging resistor, and 2 is solid state switching system, 201 is+15VDC/DC isolation module, and 202 is+15VDC/+5VDC modular converter, and 203 is fiber optic receiver, 204 is driving chip, and 205 is MOSFETs tandem tap group, and 3 is control signal system, 301 is signal generator, and 302 is optical fibre driver, and 303 is fiber optic emitter, 304 is 1 point of 2 optical fiber splitter, 401 is a Blumlein strip line, and 402 is the 2nd Blumlein strip line, and 5 is load.
Embodiment
Below in conjunction with embodiment, the invention will be further described, but should not be construed the above-mentioned subject area of the present invention and be only limitted to following embodiment.Without departing from the idea case in the present invention described above, according to ordinary skill knowledge and customary means, make various replacement and change, all should be included in protection scope of the present invention.
As shown in Fig. 1 ~ 9, a kind of based on stacked Blumlein stripline high-voltage nanosecond pulse generator, mainly comprise power-supply system 1, solid state switching system 2, control circuit 3, Blumlein strip line 4.
Described power-supply system, comprises high-voltage DC power supply 101, charging resistor 102.Described high-voltage DC power supply 101 is commercial module, its ceiling voltage amplitude 4kV, maximum current amplitude 60mA direct current of exporting.Described charging resistor 102 is commercial element, and its resistance is 31k Ω, and rated power is 100W, for limiting the charging current amplitude of high voltage source mould 101.The positive pole of described high-voltage power module 101 is connected by wire one end with charging resistor 102, the other end of charging resistor 102 is connected with the drain electrode of MOSFETs tandem tap group 205 with the terminals of Blumlein strip line 4 by wire, first strip line 401 ground plane of Blumlein strip line 4 utilizes wire to be connected with the earth electrode of high-voltage power module 101 with the earth polar of MOSFETs tandem tap group 205, forms two shunt circuits.
Described switches set 2 mainly comprises+15VDC/DC isolation module 201, + 15VDC/+5VDC modular converter 202, fiber optic receiver 203, model is the driving chip 204 of the IXRFD630 of IXYS company and the DE475-102N21A type MOSFETs switch 205 of IXYS company production.
As shown in Figure 3, the power end of described driving chip 204 is connected by the output of wire with isolation module 201, and the power input of isolation module 201 is connected with 15V pressure-wire, and isolation module 201 is powered for driving chip 204.The output of driving chip 204 is connected with the grid G of described MOSFETs tandem tap group 205, and driving chip 204 provides the current drives up to 30A for MOSFETs tandem tap group 205.The signal input part of driving chip 204 is connected with the signal output part of fiber optic receiver 203, and driving chip 204 receives the signal of telecommunication from fiber optic receiver 203.The power input of described fiber optic receiver 203 is connected by the output of wire with modular converter 202, and the power end of modular converter 202 is connected with 15V power line, and 15V voltage transitions is that 5V voltage is powered to fiber optic receiver 203 by modular converter 202.
As shown in Figure 5, fiber optic emitter 303 and optical fiber that the optical fibre driver 302 that described control circuit 3 comprises signal generator 301 that model is AFG3000C, model is DS75451, model are HFBR1522.The signal output part of described signal generator 301 is connected with the input of optical fibre driver 302, and signal generator 301 processes the TTL square wave pulse control Signal transmissions of generation to optical fibre driver 302.The output of optical fibre driver 302 is connected with the input of fiber optic emitter 303, and the drive singal that Transmission Fibers reflector 303 exports according to optical fibre driver 302 carries out electrical/optical conversion.The output of fiber optic emitter 303 is connected by optical fiber 304 with the input of fiber optic receiver 203, realizes the transmission of light signal.
Described stacked Blumlein strip line 4 is laminated for the parallel connection of multiple PCB stripline board.Described PCB stripline board comprises ground floor top layer routing layer, second layer strip line wiring layer, third layer ground plane, and quadriply belt shape line wiring layer and layer 5 bottom are isolated by FR-4 insulating material for every layer.As shown in Figure 8, ground floor top layer routing layer, second layer strip line wiring layer and third layer ground plane form ground floor strip line, and third layer ground plane, quadriply belt shape line wiring layer and layer 5 bottom form second layer strip line.As shown in Figure 6, described strip line comprises the first strip line 401 and the second strip line 402, and strip line is conductor belt, and material is copper.First strip line 401 comprises ground floor top layer first strip line ground plane, second layer wiring layer first strip line 401-2, third layer first strip line ground plane and the 4th layer of wiring layer first strip line 401-4, layer 5 bottom first strip line ground plane.Second strip line 402 comprises ground floor top layer second strip line ground plane, second layer wiring layer second strip line 402-2, third layer connect the second strip line stratum and the 4th layer of wiring layer second strip line 402-4 layer 5 bottom second strip line ground plane.First and third, five layer of first strip line ground plane and first and third, five layer of second strip line ground plane are arranged in left and right half-plane, and centre is isolated by FR-4 insulating material.Second layer wiring layer first strip line 401-2 becomes in " S " winding type layout at the left and right half-plane of place layer with second layer wiring layer second strip line 402-2, and centre is isolated by FR-4 insulating material.4th layer of wiring layer first strip line 401-4 becomes in " S " winding type layout at the left and right half-plane of place layer with the 4th layer of wiring layer second strip line 402-4, and centre is isolated by FR-4 insulating material.
As shown in Figure 9, the perforate of described PCB stripline board surrounding, utilize copper post that strip line is in parallel, ground plane is in parallel simultaneously;
Described stacked Blumlein strip line 4 is laminated for the parallel connection of multiple PCB stripline board, and described strip line comprises the first transmission line 401 and the second transmission line 402, mates different loads by PCB stripline board stacked quantity in parallel.By the following limited thickness conductor belt strip line character impedance Z that conformal mapping method obtains
0approximate solution formula is (during W/ (b-t) <10, precision is better than 0.5%):
In formula 1 ~ 4, ε
rfor dielectric material relative dielectric constant; As shown in Figure 8, t is conductor belt thickness; W is the conductor belt width of the 2nd layer and the 4th layer shown in Fig. 8.Known condition is generally strip line character impedance Z
0, the dielectric material relative dielectric constant ε that selects
rand conductive copper tape thickness t etc., therefore need following formula to try to achieve the value of w/b:
In formula 5 ~ 8: Z
0for required strip line character impedance; ε
rfor the relative dielectric constant of selected medium substrate material.
In addition, strip line phase velocity is
Then strip line length is
In formula 9 and 10: c is the light velocity, c=3 × 10
8m/s; τ/2 are for electromagnetic wave is by single strip line line required time, and namely Blumlein type strip line produces 1/2 pulsewidth of square wave.Select FR4 (relative dielectric constant: ε
r=4.4) as the medium substrate material of strip line, core thickness elects b=1.2mm as, the thick t=0.5oz of copper.It is as shown in table 1 that last basis obtains each dimensional parameters of strip line:
Table 1
Stripline conductors strip length reaches L=7.0m, needs to adopt aforementioned serpentine structure it to be connected in space inner stacks for reducing its area as far as possible.As shown in Figure 8, Toplayer layer, Strip1 layer and GND1 layer form ground floor strip line to 5 layers of strip line herein, and GND1 layer, Strip2 layer and BottomLayer layer form second layer strip line.In addition, Toplayer layer, GND1 layer and BottomLayer layer are connected to form ground plane by left side via hole, and Strip1 layer and Strip2 layer are stripline conductors band place layer, the conductor belt of this two-layer distribution is illustrated in figure 6 and is connected in series by the conductor belt of this two-layer interior distribution, terminates to hold right side via hole in by Fig. 8 to be concatenated into Strip2 layer conductor belt initial port realize being connected in series at Strip1 layer conductor belt.As shown in Figure 6, Blumlein type strip line is divided into left and right two groups of strip lines, and the conductor belt by means of only Strip2 layer connects.Finally, the 5 layers of strip line obtained specifically are of a size of:
Length × wide × thick=300 (mm) × 260 (mm) × 4.72 (mm)
The positive pole of high-voltage DC power supply 101 is connected with charging resistor 102 one end by wire, the other end of charging resistor 102 comprises two parallel branches, article one, branch road is connected by the drain electrode of wire with the MOSFETs tandem tap group 205 of solid state switching system 2, and the earth polar S of described switches set 205 is connected to high-voltage DC power supply 101 earth polar and forms a loop.Another branch road, charging resistor 102 is connected with the terminals of the first strip line 401 copper strips, and the copper strips other end is connected with the second strip line 402 copper strips, and the second strip line 402 copper strips other end is unsettled as free end.As shown in Figure 7, load 5 one end is connected in the ground connection of the second strip line 402, and the other end is connected in the ground of the first strip line 401, by wire, the ground of the first strip line 401 is taken back the formation loop, ground of high-voltage DC power supply 101 simultaneously.
In order to realize stacked in series structure in less space, as shown in Figure 9, first piece of pcb board is undertaken being connected to reach object in parallel by copper post according to physical circuit with between second piece of pcb board, by changing the length of total parallel ribbon line to reach coupling unequally loaded object.
These embodiments are interpreted as only being not used in for illustration of the present invention limiting the scope of the invention above.After the content of reading record of the present invention, technical staff can make various changes or modifications the present invention, and these equivalence changes and modification fall into the scope of the claims in the present invention equally.
Claims (3)
1. based on a stacked Blumlein stripline high-voltage nanosecond pulse generator, it is characterized in that: comprise power-supply system (1), solid state switching system (2), control circuit (3) and stacked Blumlein strip line (4);
Described power-supply system (1) comprises high-voltage DC power supply (101) and charging resistor (102);
Described solid state switching system (2) comprising :+15VDC/DC isolation module (201) ,+15VDC/+5VDC modular converter (202), fiber optic receiver (203), driving chip (204) and MOSFETs tandem tap group (205); 15V voltage transitions is 5V voltage by described modular converter (202); Described MOSFETs tandem tap group (205) is in series by two switch mosfets;
Described control circuit (3) comprises signal generator (301), optical fibre driver (302), fiber optic emitter (303) and 1 point of 2 optical fiber splitter (304);
Described stacked Blumlein strip line (4) is laminated for the parallel connection of multiple PCB stripline board; Described PCB stripline board comprises ground floor top layer ground plane, second layer strip line wiring layer, third layer ground plane, and quadriply belt shape line wiring layer and layer 5 bottom layer ground layer are isolated by FR-4 insulating material for every layer; Described strip line comprises the first strip line (401) and the second strip line (402), and strip line is conductor belt, material selection copper; First strip line (401) comprises ground floor top layer first strip line ground plane, second layer wiring layer first strip line (401-2) and third layer first strip line ground plane, the 4th layer of wiring layer first strip line (401-4), layer 5 bottom first strip line ground plane; Second strip line (402) comprises ground floor top layer second strip line ground plane, second layer wiring layer second strip line (402-2), third layer connect the second strip line stratum, the 4th layer of wiring layer second strip line (402-4) and layer 5 bottom second strip line ground plane; First and third, five layer of first strip line ground plane and first and third, five layer of second strip line ground plane are arranged in the left and right half-plane of place layer, are middlely isolated by FR-4 insulating material; Second layer wiring layer first strip line (401-2) becomes in " S " winding type layout at the left and right half-plane of place layer with second layer wiring layer second strip line (402-2), and centre is isolated by FR-4 insulating material; 4th layer of wiring layer first strip line (401-4) becomes in " S " winding type layout at the left and right half-plane of place layer with the 4th layer of wiring layer second strip line (402-4), and centre is isolated by FR-4 insulating material;
Utilize via hole to connect second layer wiring layer first strip line (401-2) end is connected with the 4th layer of wiring layer first strip line (401-4) terminal tandem, utilize copper strips to connect up the 4th layer of wiring layer first strip line (401-4) head end is connected with second layer wiring layer second strip line (402-2) head end simultaneously, second layer wiring layer second strip line (402-2) end is by via hole and the 4th layer of wiring layer second strip line (402-4) terminal tandem, and the 4th layer of wiring layer second strip line (402-4) head end is unsettled as free end; The head end of second layer wiring layer first strip line (401-2), as the terminals of the first strip line (401), utilizes via hole by first and third, the five layers of ground plane parallel connection of the first strip line, and these three layers is load terminals; Utilize via hole by first and third of the second strip line, five layers of ground plane parallel connection, these three layers is another terminals of load;
The positive pole of described high-voltage DC power supply (101) is connected with charging resistor (102) one end by wire, the other end of charging resistor (102) comprises two parallel branches, article one, branch road is connected by the drain electrode of wire with the MOSFETs tandem tap group (205) of solid state switching system (2), and the earth polar S of described switches set (205) is connected to high-voltage DC power supply (101) earth polar and forms a loop; Another branch road is connected with the first strip line (401) the conductor belt terminals of stacked Blumlein strip line (4); Load (5) one end is connected in the ground plane of the second strip line (402), the other end is connected in the ground plane of the first strip line (401), by wire, the ground plane of the first strip line (401) is taken back the formation loop, ground of high-voltage DC power supply (101) simultaneously;
The signal output part of described signal generator (301) is connected with the input of optical fibre driver (302), and the pulse control signal that signal generator (301) processing produces is transferred to optical fibre driver (302); The output of optical fibre driver (302) is connected with the input of fiber optic emitter (303), and the drive singal that Transmission Fibers reflector (303) exports according to optical fibre driver (302) carries out electrical/optical conversion; The output of fiber optic emitter (303) is connected by optical fiber (304) with the input of fiber optic receiver (203), realizes the transmission of light signal;
The power end of described driving chip (204) is connected by the output of wire with isolation module (201), the power input of isolation module (201) is connected with 15V pressure-wire, and isolation module (201) is driving chip (204) power supply; The output of driving chip (204) is connected with the grid G of described MOSFETs tandem tap group (205), and driving chip (204) provides current drives for MOSFETs tandem tap group (205); The signal input part of driving chip (204) is connected with the signal output part of fiber optic receiver (203), and driving chip (204) receives the signal of telecommunication from fiber optic receiver (203); The power input of described fiber optic receiver (203) is connected by the output of wire with modular converter (202), the power end of modular converter (202) is connected with 15V power line, and 15V voltage transitions is that 5V voltage is powered to fiber optic receiver (203) by modular converter (202).
2. one according to claim 1 is based on stacked Blumlein stripline high-voltage nanosecond pulse generator, it is characterized in that:
220V alternating current is converted to the direct current of ceiling voltage 4kV by described high-voltage power module (101), and maximum direct current is 60mA.
3. one according to claim 1 is based on stacked Blumlein stripline high-voltage nanosecond pulse generator, it is characterized in that:
Described stacked Blumlein strip line (4) is a kind of pulse forming unit of designed, designed, simultaneously in the perforate of every block pcb board surrounding, utilizes copper post to realize the parallel connection of pcb board stacked, reaches the object changing transmission line impedance; According to load, utilize copper post by parallel for end that is in parallel for the first strip line (401) head end at even level pcb board, the second strip line (402) conductor, and first strip line (401) of even level pcb board and the ground connection of the second strip line (402) in parallel separately.
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| CN106291014A (en) * | 2016-08-31 | 2017-01-04 | 许继电源有限公司 | A kind of high-voltage pulse generator |
| CN106900135A (en) * | 2017-04-10 | 2017-06-27 | 中国科学院电工研究所 | A kind of nanosecond pulse for plasma igniting is superimposed continuous-current plant |
| CN106941346A (en) * | 2017-04-20 | 2017-07-11 | 重庆大学 | Modular solid-state millimicrosecond pulse generator based on PCBBlumlein transmission lines and PCB line transformers |
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| CN106941346A (en) * | 2017-04-20 | 2017-07-11 | 重庆大学 | Modular solid-state millimicrosecond pulse generator based on PCBBlumlein transmission lines and PCB line transformers |
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| CN108184306B (en) * | 2017-12-28 | 2020-01-31 | 中国电子产品可靠性与环境试验研究所 | Electric field passive probe |
| CN110190834A (en) * | 2019-06-11 | 2019-08-30 | 中国工程物理研究院流体物理研究所 | A kind of single-stage and multistage pulses formation line and its induction superimposer based on glass-fiber-plate |
| CN110190834B (en) * | 2019-06-11 | 2024-05-03 | 中国工程物理研究院流体物理研究所 | Single-stage and multi-stage pulse forming wire based on glass fiber board and induction superposition device thereof |
| CN111464068A (en) * | 2020-04-30 | 2020-07-28 | 清华大学 | Nanosecond pulse power supply |
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