CN105098081B - A kind of preparation method of opto-electronic device and opto-electronic device - Google Patents

A kind of preparation method of opto-electronic device and opto-electronic device Download PDF

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CN105098081B
CN105098081B CN201510330807.6A CN201510330807A CN105098081B CN 105098081 B CN105098081 B CN 105098081B CN 201510330807 A CN201510330807 A CN 201510330807A CN 105098081 B CN105098081 B CN 105098081B
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electrode
buffer layer
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electronic device
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CN105098081A (en
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孔超
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BOE Technology Group Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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    • Y02E10/549—Organic PV cells

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Abstract

The embodiments of the invention provide the preparation method of a kind of opto-electronic device and opto-electronic device, it is related to photoelectron technical field, the exciton fission of solar cell active layer can be promoted, produces more electronics, hole, and then improve the discharging efficiency of solar cell.The opto-electronic device includes：Photocell, the photocell include：The first electrode and second electrode that are oppositely arranged and the active layer between the first electrode and second electrode；3rd electrode, the 3rd electrode are located at side of the first electrode away from the second electrode；Insulating barrier between the 3rd electrode and the first electrode；Wherein, the second electrode is identical with the 3rd polarity of electrode, the second electrode and the first electrode opposite polarity.

Description

A kind of preparation method of opto-electronic device and opto-electronic device
Technical field
The present invention relates to photoelectron technical field, more particularly to the preparation side of a kind of opto-electronic device and opto-electronic device Method.
Background technology
At present, organic solar batteries are increasingly valued by the people, and its preparation technology is simple, and device architecture is simple, will There is more wide application in field of solar energy.Under illumination condition, by from HOMO under the electronics of solar cell active layer (Highest Occupied Molecular Orbital, HOMO highest occupied molecular orbital) energy level transition is to LUMO (Lowest Unoccupied Molecular Orbital, minimum to have accounted for track) energy level, produce electron-hole pair (forming exciton).Swash Son is separated into electronics and hole in the presence of built in field, and the electronics and hole after separation are transmitted to cathode and sun respectively On extremely, production electric energy is power supply for electrical equipment.
Exciton in existing solar cell active layer is combined into the electronics of exciton, hole can not accumulate without all dissociating Gather electrode surface, therefore, cause the discharging efficiency of solar cell to be also affected.
The content of the invention
The embodiment of the present invention provides a kind of preparation method of opto-electronic device and opto-electronic device, can promote solar-electricity The exciton fission of pond active layer, more electronics, hole are produced, and then improve the discharging efficiency of solar cell.
To reach above-mentioned purpose, the technical scheme that the embodiment of the present invention uses is,
First aspect, there is provided a kind of opto-electronic device, including：
Photocell, the photocell include：The first electrode and second electrode that are oppositely arranged and positioned at the described first electricity Active layer between pole and second electrode；
3rd electrode, the 3rd electrode are located at side of the first electrode away from the second electrode；
Insulating barrier between the 3rd electrode and the first electrode；
Wherein, the second electrode is identical with the 3rd polarity of electrode, the second electrode and the first electrode pole Property is opposite；And voltage be present between the 3rd electrode and the first electrode.
With reference in a first aspect, first aspect the first possible implementation, in addition to：Power supply, the power supply with The first electrode is connected with the 3rd electrode so that voltage be present between the first electrode and the 3rd electrode.
With reference to the first possible implementation of first aspect, in second of possible implementation of first aspect, Also include：The first buffer layer that is arranged between the active layer and the first electrode and it is arranged at the active layer and institute State the second buffer layer between second electrode.
With reference to first aspect or the first of first aspect or second of possible implementation, in the third of second aspect In possible implementation, the first electrode is negative electrode, and the second electrode, the 3rd electrode are anode.
With reference to the third possible implementation of first aspect, in the 4th kind of possible implementation of second aspect In, anode material is copper, tin indium oxide ITO, SnO2, one kind in ZnO, FTO, AZO；Cathode material is magnesium alloy, magnesium silver Alloy, PEDOT：One kind in PSS.
With reference in a first aspect, in the 5th kind of possible implementation of second aspect, the material of the insulating barrier is SiO2、SiO、Si3N4、TiO、Ta2O5, LiF, PVP, one kind in polymetylmethacrylate.
With reference to second of possible implementation of first aspect, in the 6th kind of possible implementation of second aspect In, if the first electrode is anode, the second electrode is negative electrode；Then the first buffer layer is anode buffer layer, described Second buffer layer is cathode buffer layer；
If the first electrode is negative electrode, the second electrode is anode；Then the first buffer layer is cathode buffer layer, The second buffer layer is anode buffer layer.
With reference to the 6th kind of possible implementation of first aspect, in the 7th kind of possible implementation of second aspect In, the material of the anode buffer layer is PEDOT：PSS、MoO3、V2O5In one kind；The material of the cathode buffer layer is LiF、Liq、CsCO3、C60、C70In one kind.
Second aspect, a kind of preparation method of opto-electronic device is disclosed, including：
Second electrode is formed on underlay substrate；
Active layer, first electrode and insulating barrier are sequentially formed on the underlay substrate formed with the second electrode；
The 3rd electrode is formed on the underlay substrate formed with the insulating barrier；
Wherein, the second electrode is identical with the 3rd polarity of electrode, the second electrode and the first electrode pole Property is opposite.
With reference to second aspect, in the first possible implementation of second aspect, before the active layer is formed, Methods described also includes：
Second buffer layer is formed on the underlay substrate formed with the second electrode；
After the active layer is formed, methods described also includes：
Second buffer layer is formed on the underlay substrate formed with the active layer.
With reference to the possible implementation of the first of second aspect or second aspect, second in second aspect is possible In implementation, the first electrode is negative electrode, and the second electrode, the 3rd electrode are anode.
With reference to second of possible implementation of second aspect, in the third possible implementation of second aspect In, the material of the anode is copper, tin indium oxide ITO, SnO2, one kind in ZnO, FTO, AZO；The material of the negative electrode is magnesium Aluminium alloy, magnesium silver alloy, PEDOT：One kind in PSS.
With reference to second aspect, in the 4th kind of possible implementation of second aspect, the material of the insulating barrier is SiO2、SiO、Si3N4、TiO、Ta2O5, LiF, PVP, one kind in polymetylmethacrylate.
With reference to the first possible implementation of second aspect, in the 5th kind of possible implementation of second aspect In, if the first electrode is anode, the second electrode is negative electrode；Then the first buffer layer is anode buffer layer, described Second buffer layer is cathode buffer layer；
If the first electrode is negative electrode, the second electrode is anode；Then the first buffer layer is cathode buffer layer, The second buffer layer is anode buffer layer.
With reference to the 5th kind of possible implementation of second aspect, in the 6th kind of possible implementation of second aspect In, the material of the anode buffer layer is PEDOT：PSS、MoO3、V2O5In one kind；The material of the cathode buffer layer is LiF、Liq、CsCO3、C60、C70In one kind.
The present invention provides a kind of preparation method of opto-electronic device and opto-electronic device, including：Photocell, the photocell Including：The first electrode and second electrode that are oppositely arranged and the active layer between the first electrode and second electrode； 3rd electrode, the 3rd electrode are located at side of the first electrode away from the second electrode；Positioned at the 3rd electrode Insulating barrier between the first electrode；Wherein, the second electrode is identical with the 3rd polarity of electrode, second electricity Pole and the first electrode opposite polarity；And voltage be present between the 3rd electrode and the first electrode.When in first electrode And the 3rd apply certain voltage between electrode, electronics has been gathered on surface of the first electrode away from second electrode under electric field action (or hole), the hole gathered with second electrode on the surface of first electrode (or electronics) form an additional electric field. Exciton in the presence of the additional electric field in active layer is dissociated, and forms electronics and hole, electronics, hole displacement, shape Into electric current.In the prior art, a part of electronics in solar cell active layer and a part of hole-recombination influence too into exciton The discharging efficiency of positive energy battery.And opto-electronic device provided by the invention can improve the exciton fission efficiency in active layer, from And improve the discharging efficiency of solar cell.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the structural representation for the opto-electronic device that the embodiment of the present invention 1 provides；
Fig. 2 is another structural representation for the opto-electronic device that the embodiment of the present invention 1 provides；
Fig. 3 is another structural representation for the opto-electronic device that the embodiment of the present invention 1 provides；
Fig. 4 is the schematic flow sheet of the preparation method for the opto-electronic device that the embodiment of the present invention 2 provides.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made Embodiment, belong to the scope of protection of the invention.
Under illumination condition, by from HOMO energy level transition to lumo energy under the electronics of solar cell active layer, produce Pair of electrons and hole are to (forming exciton).Exciton diffusion is on the interface of electron donor and electron acceptor, in built in field In the presence of exciton on the interface of donor/acceptor be separated, electronics and hole after separation are transmitted to cathode and sun respectively On extremely, electric energy is produced to power supply for electrical equipment.But the exciton of solar cell active layer does not have all dissociation at present, influences The discharging efficiency of solar cell.If caused exciton can be dissociated into electronics and hole, and be reached by very short path The interface of anode, negative electrode, it becomes possible to improve the discharging efficiency of solar cell.The present invention provides a kind of opto-electronic device, can Increase the efficiency of exciton fission in organic solar batteries, so as to improve the discharging efficiency of solar cell.
Embodiment 1：
The embodiment of the present invention provides a kind of opto-electronic device 10, as shown in figure 1, the opto-electronic device 10 includes：First Electrode 101, second electrode 102, active layer 103, the electrode 105 of insulating barrier 104 and the 3rd.
Wherein, the first electrode 101 and second electrode 102 that are oppositely arranged and positioned at the first electrode 101 and second Active layer 103 between electrode 102 constitutes photronic primary structure.It is remote that 3rd electrode 105 is located at the first electrode 101 From the side of the second electrode 102.Insulating barrier 104 is between the 3rd electrode 105 and the first electrode 101.
It should be noted that the second electrode 102 is identical with the polarity of the 3rd electrode 105, the second electrode 102 With the opposite polarity of first electrode 101；And voltage be present between the 3rd electrode 105 and the first electrode 101.
Under illumination condition, the Electron absorption light in active layer 103 between first electrode 101 and second electrode 102 from HOMO energy level transitions produce pair of electrons and hole to lumo energy.Meanwhile exciton can be also formed in active layer 103 (i.e. by storehouse The electron-hole pair that logical sequence power is bound together).Electronics to first electrode 101 close to the surface of second electrode 102 (or second electricity Pole 102 is close to the surface of first electrode 101) it is mobile, hole is to second electrode 102 close to the surface of first electrode 101 (or first Electrode 101 is close to the surface of second electrode 102) it is mobile, form electric current.Applied when between the electrode 105 of first electrode 101 and the 3rd Add certain voltage, due to insulating barrier 104 and non-conductive, table of the first electrode 101 away from second electrode 102 under electric field action Area has gathered electronics (or hole), the hole gathered with second electrode 102 on the surface of first electrode 101 (or electronics) shape Into an additional electric field.Exciton in active layer 103 in the presence of the additional electric field is dissociated, and forms electronics and hole, Electronics, hole displacement, form electric current.It can be seen that opto-electronic device provided by the invention enables to swashing in active layer 103 Subsolution is from so as to improve the discharging efficiency of solar cell.
Further, as shown in Fig. 2 the opto-electronic device 10 also includes power supply 106, the electricity of power supply 106 and first Pole 101 is connected with the 3rd electrode 105 so that voltage be present between the electrode 105 of first electrode 101 and the 3rd.Specifically, if the first electricity Pole 101 is negative electrode, and the 3rd electrode is anode, then the anode of power supply 106 is connected with the 3rd electrode, the moon of the power supply 106 Pole is connected with the first electrode.If first electrode 101 is anode, the 3rd electrode is negative electrode, then the negative electrode of the power supply 106 with 3rd electrode is connected, and the anode of the power supply is connected with the first electrode.
It should be noted that the power supply 106 to the electrode 105 of first electrode 101 and the 3rd applying voltage so that the Electrical potential difference between one electrode 101 and the 3rd electrode 105.If first electrode 101 is anode, the 3rd electrode 105 is negative electrode, then described The negative electrode of power supply 106 is connected with the 3rd electrode 105, and the anode of the power supply 106 is connected with first electrode 101.If first electrode 101 be negative electrode, and the 3rd electrode 105 is anode, then the anode of the power supply 106 is connected with the 3rd electrode 105, the power supply 106 Negative electrode be connected with first electrode 101.
In addition, the first anode 101 is additionally operable to be connected with electrical equipment with second electrode 102, to electrical equipment Power supply.
Further, as shown in figure 3, the opto-electronic device 10 also includes first buffer layer 107 and second buffer layer 108.Wherein, first buffer layer 107 is arranged between the active layer 103 and the first electrode 101, second buffer layer 108 It is arranged between the active layer 103 and the second electrode 102.
If it should be noted that the first electrode 101 is anode, the second electrode 102 is negative electrode；Then described first Cushion 107 is anode buffer layer, and the second buffer layer 108 is cathode buffer layer.If the first electrode 101 is negative electrode, The second electrode 102 is anode；Then the first buffer layer 107 is cathode buffer layer, and the second buffer layer 108 is anode Cushion.The material of the anode buffer layer is PEDOT：PSS、MoO3、V2O5In one kind；The material of the cathode buffer layer For LiF, Liq, CsCO3、C60、C70In one kind.
In a preferred embodiment of the invention, the first electrode 101 is negative electrode, the second electrode 102, the described 3rd Electrode 105 is anode.
It should be noted that the material of anode can be copper, tin indium oxide ITO, SnO2, one kind in ZnO, FTO, AZO； The material of negative electrode can be magnesium alloy, magnesium silver alloy, PEDOT：One kind in PSS.
The material of the insulating barrier is SiO2、SiO、Si3N4、TiO、Ta2O5, LiF, PVP, polymetylmethacrylate In one kind.
The present invention provides a kind of opto-electronic device, including first electrode, second electrode, active layer, insulating barrier and the 3rd Electrode.Wherein, the second electrode is identical with the 3rd polarity of electrode, the second electrode and the first electrode polarity phase Instead.When applying certain voltage between first electrode and the 3rd electrode, first electrode is away from second electrode under electric field action Surface gathered electronics (or hole), the hole gathered with second electrode on the surface of first electrode (or electronics) formation One additional electric field.Exciton in active layer in the presence of the additional electric field is dissociated, formation electronics and hole, electronics, Hole displacement, form electric current.In the prior art, a part of electronics in solar cell active layer and a part of hole are answered Exciton is synthesized, influences the discharging efficiency of solar cell.And opto-electronic device provided by the invention can be improved in active layer Exciton fission efficiency, so as to improve the discharging efficiency of solar cell.
Embodiment 2：
The embodiment of the present invention provides a kind of preparation method of opto-electronic device, as shown in figure 4, methods described includes following step Suddenly：
201st, second electrode is formed on underlay substrate.
Wherein, the underlay substrate can be glass, flexible polymer, sheet metal of high printing opacity etc..Clean and dry After the underlay substrate, prepared on the underlay substrate and form second electrode, can also etched second electrode by photoetching process For the electrode pattern of needs.The method for preparing the second electrode can be CVD (vapour deposition process), magnetron sputtering, electron beam One kind in evaporation, solution spin coating.
202nd, second buffer layer, active layer, first slow is sequentially formed on the underlay substrate formed with the second electrode Rush layer, first electrode and insulating barrier.
Wherein, the preparation method of active layer can be that (solution spin coating or ink-jet are beaten for vapour deposition method or solwution method Print).The material of active layer can be PTB7：PCBM, thickness can be 100nm.The material of insulating barrier can be that inorganic electroluminescence becomes Color material or organic electrochromic material, wherein inorganic electrochromic material are such as：SiO2、SiO、Si3N4、TiO、Ta2O5, LiF etc. The preferable inorganic material of insulating properties.Organic electrochromic material is such as：The preferable organic material of the insulating properties such as PVP, PMMA.Absolutely The thickness of edge layer can be 400nm.
203rd, the 3rd electrode is formed on the underlay substrate formed with the insulating barrier.
Wherein, the method for preparing the second electrode can be in CVD, magnetron sputtering, electron-beam vapor deposition method, solution spin coating One kind.
Finally, the device formed through step 101-103 is packaged, can is UV (Ultraviolet) encapsulation, Frit Encapsulation etc..
It should be noted that the second electrode is identical with the 3rd polarity of electrode, the second electrode and described the One polarity of electrode is opposite.3rd electrode is identical with the thickness of second electrode.If the first electrode is anode, the second electrode For negative electrode；Then the first buffer layer is anode buffer layer, and the second buffer layer is cathode buffer layer.If the first electrode For negative electrode, the second electrode is anode；Then the first buffer layer is cathode buffer layer, and the second buffer layer is delayed for anode Rush layer.The material of the anode buffer layer is PEDOT：PSS、MoO3、V2O5In one kind；The material of the cathode buffer layer is LiF、Liq、CsCO3、C60、C70In one kind.Anode buffer layer can use solution spin-coating method to prepare, and spin coating rotating speed can be 2000 revs/min, the thickness of anode buffer layer can be 40nm.Cathode buffer layer can use Vacuum Heat to steam method and prepare, thickness Can be 0.3~2nm.
In addition, anode material can be copper (Cu), ITO (indium tin oxide, tin indium oxide), SnO2、ZnO、FTO (tin oxide of Fluorin doped, SnO2：F), AZO (tin oxide of aluminium doping, SnO2：Al) etc..Cathode material is the magnesium of low work function Aluminium alloy, magnesium silver alloy etc. or highly conductive PEDOT：PSS (Poly (3,4-ethylenedioxythiophene)/ Poly (styrenesulfonate), poly- (3,4-rthylene dioxythiophene)-polystyrolsulfon acid).
In a preferred embodiment of the invention, the first electrode is negative electrode, and the second electrode, the 3rd electrode are equal For anode.
The present invention provides a kind of preparation method of opto-electronic device, second electrode is sequentially formed on underlay substrate, in shape Sequentially formed on into the underlay substrate for having the second electrode second buffer layer, active layer, first buffer layer, first electrode and Insulating barrier, the 3rd electrode is formed on the underlay substrate formed with the insulating barrier.Wherein, the second electrode and the described 3rd Polarity of electrode is identical, the second electrode and the first electrode opposite polarity.When being applied between first electrode and the 3rd electrode Add certain voltage, electronics (or hole) has been gathered on surface of the first electrode away from second electrode under electric field action, with second The hole (or electronics) that electrode gathers on the surface of first electrode forms an additional electric field.In the effect of the additional electric field Exciton in lower active layer is dissociated, and is formed electronics and hole, electronics, hole displacement, is formed electric current.Prior art In, a part of electronics in solar cell active layer, into exciton, influences the electric discharge of solar cell with a part of hole-recombination Efficiency.And opto-electronic device provided by the invention can improve the exciton fission efficiency in active layer, so as to improve solar-electricity The discharging efficiency in pond.
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any Those familiar with the art the invention discloses technical scope in, change or replacement can be readily occurred in, should all be contained Cover within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.

Claims (12)

  1. A kind of 1. opto-electronic device, it is characterised in that including：
    Photocell, the photocell include：The first electrode and second electrode that are oppositely arranged and positioned at the first electrode and Active layer between second electrode；
    3rd electrode, the 3rd electrode are located at side of the first electrode away from the second electrode；
    Insulating barrier between the 3rd electrode and the first electrode；
    Wherein, the second electrode is identical with the 3rd polarity of electrode, the second electrode and the first electrode polarity phase Instead；
    Also include：Power supply, the power supply are connected with the first electrode and the 3rd electrode so that the first electrode and institute State between the 3rd electrode and voltage be present；
    The first electrode is negative electrode, and the second electrode, the 3rd electrode are anode；Or the first electrode is Anode, the second electrode, the 3rd electrode are negative electrode.
  2. 2. opto-electronic device according to claim 1, it is characterised in that also include：Be arranged at the active layer with it is described First buffer layer between first electrode and the second buffer layer being arranged between the active layer and the second electrode.
  3. 3. opto-electronic device according to claim 1, it is characterised in that the material of the anode is copper, tin indium oxide ITO、SnO2, one kind in ZnO, FTO, AZO；The material of the negative electrode is magnesium alloy, magnesium silver alloy, PEDOT:In PSS It is a kind of.
  4. 4. opto-electronic device according to claim 1, it is characterised in that the material of the insulating barrier is SiO2、SiO、 Si3N4、TiO、Ta2O5, one kind in LiF, PVP polymetylmethacrylate.
  5. 5. opto-electronic device according to claim 2, it is characterised in that if the first electrode is anode, described second Electrode is negative electrode；Then the first buffer layer is anode buffer layer, and the second buffer layer is cathode buffer layer；
    If the first electrode is negative electrode, the second electrode is anode；Then the first buffer layer is cathode buffer layer, described Second buffer layer is anode buffer layer.
  6. 6. opto-electronic device according to claim 5, it is characterised in that the material of the anode buffer layer is PEDOT: PSS、MoO3、V2O5In one kind；The material of the cathode buffer layer is LiF, Liq, CsCO3、C60、C70In one kind.
  7. A kind of 7. preparation method of opto-electronic device, it is characterised in that including：
    Second electrode is formed on underlay substrate；
    Active layer, first electrode and insulating barrier are sequentially formed on the underlay substrate formed with the second electrode；
    The 3rd electrode is formed on the underlay substrate formed with the insulating barrier；
    Wherein, the second electrode is identical with the 3rd polarity of electrode, the second electrode and the first electrode polarity phase Instead；
    Also it is connected including forming power supply with the first electrode and the 3rd electrode so that the first electrode and the described 3rd Voltage between electrode be present；
    The first electrode is negative electrode, and the second electrode, the 3rd electrode are anode；Or the first electrode is Anode, the second electrode, the 3rd electrode are negative electrode.
  8. 8. according to the method for claim 7, it is characterised in that before the active layer is formed, methods described also includes：
    Second buffer layer is formed on the underlay substrate formed with the second electrode；
    After the active layer is formed, methods described also includes：
    First buffer layer is formed on the underlay substrate formed with the active layer.
  9. 9. according to the method for claim 7, it is characterised in that the material of the anode is copper, tin indium oxide ITO, SnO2、 One kind in ZnO, FTO, AZO；The material of the negative electrode is magnesium alloy, magnesium silver alloy, PEDOT:One kind in PSS.
  10. 10. according to the method for claim 7, it is characterised in that the material of the insulating barrier is SiO2、SiO、Si3N4、 TiO、Ta2O5, LiF, PVP, one kind in polymetylmethacrylate.
  11. 11. according to the method for claim 8, it is characterised in that if the first electrode is anode, the second electrode is Negative electrode；Then the first buffer layer is anode buffer layer, and the second buffer layer is cathode buffer layer；
    If the first electrode is negative electrode, the second electrode is anode；Then the first buffer layer is cathode buffer layer, described Second buffer layer is anode buffer layer.
  12. 12. according to the method for claim 11, it is characterised in that the material of the anode buffer layer is PEDOT:PSS、 MoO3、V2O5In one kind；The material of the cathode buffer layer is LiF, Liq, CsCO3、C60、C70In one kind.
CN201510330807.6A 2015-06-15 2015-06-15 A kind of preparation method of opto-electronic device and opto-electronic device Active CN105098081B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203631567U (en) * 2013-12-19 2014-06-04 权文光 Solar cell
CN103872247A (en) * 2014-03-19 2014-06-18 太原理工大学 Organic small-molecule photovoltaic device based on three-terminal electrode structure
CN104319347A (en) * 2014-11-04 2015-01-28 太原理工大学 Organic polymer solar cell and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203631567U (en) * 2013-12-19 2014-06-04 权文光 Solar cell
CN103872247A (en) * 2014-03-19 2014-06-18 太原理工大学 Organic small-molecule photovoltaic device based on three-terminal electrode structure
CN104319347A (en) * 2014-11-04 2015-01-28 太原理工大学 Organic polymer solar cell and manufacturing method thereof

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