CN105047412B - A kind of light-operated variable condenser - Google Patents
A kind of light-operated variable condenser Download PDFInfo
- Publication number
- CN105047412B CN105047412B CN201510465005.6A CN201510465005A CN105047412B CN 105047412 B CN105047412 B CN 105047412B CN 201510465005 A CN201510465005 A CN 201510465005A CN 105047412 B CN105047412 B CN 105047412B
- Authority
- CN
- China
- Prior art keywords
- light
- layer
- dielectric materials
- led
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
A kind of light-operated variable condenser, the light-operated variable condenser includes control section and photosensitive capacitor, the control section is provided with LED/light source, the power supply powered for LED/light source and the variable resistance being connected in supply line, the photosensitive capacitor has dielectric materials layer, the dielectric materials layer is made up of the light-sensitive material with small polarons effect, conductive layer and encapsulated layer are sequentially provided with the both sides of dielectric materials layer, the conductive layer and encapsulated layer of the dielectric materials layer one or both sides are made up of light transmissive material, to enable the light that LED/light source is sent to be radiated at through conductive layer and encapsulated layer on dielectric materials layer, and change the light intensity of LED/light source by adjusting the resistance of variable resistance, so as to change the dielectric constant of dielectric materials layer.The capacitance size of the capacitor can be adjusted by the intensity of irradiation light, can be used as the frequency modulation part of all kinds of electronic devices, or for making photodetector.
Description
Technical field
The present invention relates to a kind of capacitor, the light-operated variable condenser that specifically a kind of capacitance can change.
Background technology
Photoelectric technology is in the field such as national economy, military security, scientific research extensive application.The physics of photoelectric technology
Basis is various photoelectric effect.Generally, photoelectric effect is divided into external photoeffect and inner photoeffect.External photoeffect refers in light
Under irradiation, the phenomenon that the electronics effusion surface in metal or semiconductor is outwards launched, main application has photoelectric tube and photomultiplier transit
Pipe etc..Inner photoeffect refers under the irradiation of light, and the electrical effect that electron-hole pair is triggered is produced inside semiconductor.Interior photoelectricity
Benefit Transfer is complicated, common are photoconductive effect, photovoltaic effect etc..The main application of photoconductive effect has photo resistance, light
Conductance pick-up tube etc.;The main application of photovoltaic effect has photovoltaic cell, light (electricity) quick diode, light (electricity) quick triode etc..
Photocapacitance effect is a kind of inner photoeffect, is referred under the irradiation of light, the dielectric constant or electricity of semiconductor/insulator
Hold the phenomenon that constant changes.Under usual conditions, the photocapacitance effect of most semiconductor/insulators is not notable.But stronger
Under radiation condition(Such as Aero-Space)Or some special material (such as ZnS-CdS, SrTiO3, organic polymer) inner, photocapacitance
Effect highly significant [H.Kallman, B. Kramer, and A. Perlmutter, Phys. Rev. 89,700
(1953);S.Kronenberg and C.A.Accardo, Phys.Rev.101,989 (1956);T.Hasegawa,
S.Mouri, Y.Yamada, and K.Tanaka, J.Phys. Soc.Jpn 72,41 (2003)].Set in precision electronic device
In meter, it is necessary to take into account the influence of photocapacitance effect.For example, the capacity cell in aviation/spaceflight apparatus is under sunshine irradiation
May occur the larger change of capacitance values, and then influence even to destroy the normal operating conditions of instrument, it is therefore desirable to its electricity
Hold element and do necessary lucifuge protection.In solar energy photoelectric conversion field, photocapacitance effect also has important potential application [R.W.
Glazebrook and A.Thomas, J. Chem. Soc.Faraday Trans.II78, 2053 (1982)]。
In some special oxide semiconductors, such as Rutile Type TiO2、MnO2、WO3、BaTiO3、SrTiO3Deng existing
The carrier of small polarons type.The lattice that so-called small polarons refer to electrons and its periphery small range in semiconductor occurs
A kind of quasi particle formed by strong coupling.Under strong Electron-phonon coupling, small polarons type semiconductor energy band
Light induced electron/the hole on side by decay in band gap small polarons [G.L. Li, W.X. Li, and C. Li,
Phys. Rev. B 82, 235109 (2010)].Compared with general semiconductor, small polarons type semiconductor has some special
[Li Guoling, Li Liben, wangdan pellet, Cao Jingxiao, Wang Zhaowu, one kind are based on interface polaron for different photoelectric effect, such as photovoltaic effect
Semiconductor solar cell of effect and preparation method thereof, ZL201210028953.X, 2014.06].
The content of the invention
The technical problems to be solved by the invention are to provide the light-operated variable condenser that a kind of capacitance can change.
The present invention is for the technical scheme that is used of solution above-mentioned technical problem:A kind of light-operated variable condenser, this is light-operated
Variable condenser includes control section and photosensitive capacitor, the power supply that the control section powers provided with LED/light source, for LED/light source
With the variable resistance being connected in supply line, the photosensitive capacitor has dielectric materials layer, and the dielectric materials layer is by with small
The light-sensitive material of polaron effect is made, and conductive layer and encapsulated layer, the dielectric are sequentially provided with the both sides of dielectric materials layer
The conductive layer and encapsulated layer of material layer one or both sides are made up of light transmissive material, so that the light for enabling LED/light source to send is saturating
Cross conductive layer and encapsulated layer is radiated on dielectric materials layer, and pass through the light for the resistance change LED/light source for adjusting variable resistance
Line strength, so as to change the dielectric constant of dielectric materials layer.
The galvanometer for measuring its supply current is connected in the supply line of the LED/light source.
Described light-sensitive material is red schorl phase titanium dioxide, barium titanate or strontium titanates.
Described encapsulated layer is glass plate, and conductive layer is attached conducting film on a glass.
Described encapsulated layer is glass plate, and conductive layer is by attached conducting film on a glass and is plated in dielectric material layer surface
Conductive silver paste constitute.
The conductive layer of the dielectric materials layer both sides is connected to positive wire and negative wire.
Described dielectric materials layer is fired after the repressed shaping of light-sensitive material with small polarons effect and formed.
It has been investigated that, conventional dielectric material such as TiO2、BaTiO3 、SrTiO3Deng belonging to small polarons type and partly lead
Body.Under illumination condition, the photoproduction small polarons in such dielectric material will significantly increase its dielectric constant.By such dielectric material
The capacitor of material composition can be as photosensitive capacitor device, with important commercial Application and research value.
When the energy of incident light is more than semiconductor band gap, semiconductor valence-band electrons will be excited to conduction band.In conduction band
In electronics phonon assistance under, will be 10-12 Conduction band bottom is decayed in s time scales, as photo-generated carrier.For common
Semiconductor, the life-span in light induced electron/hole is 10-9 S magnitudes.For the semiconductor of small polarons type, the electronics in conduction band will
Rest on the lower small polarons energy level of energy rather than conduction band bottom.Its life-span of carrier in small polarons energy level is relatively
Long (10-3 S even s magnitudes).
The frequency range of Dielectric measuring is usually 102—106Hz, the corresponding dielectric response time is 10-6—10-2 s.Cause
The life-span of photo-generated carrier is too short with respect to the features described above time in this general semiconductor, is imitated discounting for interfacial polarization
Should, contribution of the photo-generated carrier to dielectric constant can be ignored.But for the semiconductor of small polarons type, its photoproduction is carried
Stream is the life-span of small polarons with respect to this feature time long enough.In addition, between small polarons or small polarons and lattice
In ion between can form electric dipole.Under External Electrical Field, these electric dipoles can be aligned.Therefore,
In the semiconductor of small polarons type, illumination can improve the electric dipole concentration in semiconductor, and then increase dielectric constant.
The beneficial effects of the invention are as follows:There is provided a kind of light-operated variable condenser, the capacitance size of the capacitor can lead to
Cross the intensity of irradiation light to adjust, suitable LED/light source is excited by the power supply of control section, the light produced with LED/light source
To control the size of condenser capacitance, it can be used as the frequency modulation part of all kinds of electronic devices, or for making photodetector.
Brief description of the drawings
Fig. 1 is the schematic diagram of light-operated variable condenser.
Fig. 2 is the structural representation of photosensitive capacitor.
Marked in figure:111 and 121 be encapsulated layer, and 112 and 122 be conductive layer, and 211 be dielectric materials layer, 311 represent into
Light direction is penetrated, 411 be positive wire, and 412 be negative wire;V is power supply, and R is variable resistance, and S is controlling switch, and I is electricity
Flowmeter, L is LED/light source, and C is photosensitive capacitor.
Embodiment
Embodiments of the present invention are illustrated below in conjunction with accompanying drawing.
A kind of light-operated variable condenser, the light-operated variable condenser includes control section and photosensitive capacitor.The photosensitive electricity
Container has dielectric materials layer 211, and dielectric materials layer uses the light-sensitive material with small polarons effect(For example grind purity
99.9% polycrystalline small polarons oxide raw material red schorl phase titanium dioxide, barium titanate, strontium titanates etc.)It is made.In dielectric material
Layer 211 both sides be sequentially provided with conductive layer and encapsulated layer, conductive layer is brought into close contact with dielectric materials layer, for connection electrode with
External circuit.Encapsulated layer is used to protect conductive layer therein and dielectric materials layer, and plays the fixed effect of support.In order that being situated between
Material layer can change dielectric constant with the extraneous change for irradiating luminous intensity, and the dielectric materials layer one or both sides are led
Electric layer and encapsulated layer should be made up of the light transmissive material for being capable of transmitted light.For example only side encapsulated layer 121 and conductive layer 122 is
Permeable material, and the encapsulated layer 111 of opposite side and conductive layer 112 are light tight, or both sides conductive layer 112,122 and encapsulated layer
111st, 121 be light transmissive material.Its specific material can use electro-conductive glass, glass plate matrix therein as encapsulated layer, and
Conducting film on electro-conductive glass is as conductive layer, and this conducting film can be ITO, ZnO film or AZO films.If it is necessary, envelope
Filling layer can also be made using other transparent insulation materials, such as lucite.And conductive layer can also by it is attached on a glass
Conducting film and be plated in the conductive silver paste of dielectric material layer surface and collectively form.Conductive silver paste should select transparent type silver paste.It is being situated between
The conductive layer of material layer both sides has been also respectively connected with positive wire 411 and negative wire 412, to connect external circuit.
The control section is provided with LED/light source L, power supply V and variable resistance R.The power supply is connected with LED/light source and is
It is powered, and variable resistance is connected in supply line.The power supply can be internal electric sources such as battery or by lead
The external power source of connection.The set location of the LED/light source is relative with photosensitive capacitor C, its light sent is radiated at light
On quick electric capacity.The light intensity of LED/light source can be changed by the resistance for adjusting variable resistor, so as to change Jie of dielectric materials layer
Electric constant.
In order to be easy to the situation of change for grasping LED/light source light intensity, to determine the capacitance of photosensitive capacitor,
The galvanometer for measuring its supply current can also be connected in the supply line of LED/light source, by current value reflect light intensity and
The adjustment situation of capacitance.
Illustrate the preparation method of the photosensitive capacitor by taking a kind of embodiment as an example, making step is:(1), first will tool
The light-sensitive material solubilizer for having small polarons effect is pressed into sheet after grinding, then fired that flaky pottery is made, during firing
Technical parameter is referred to existing burning process, the flaky pottery the being fired into as dielectric materials layer;(2), by smear,
The method of spraying or silk-screen printing sets conductive silver paste coating in the both sides of dielectric materials layer;(3), take two panels electro-conductive glass juxtaposition
In dielectric materials layer both sides, the conducting film on electro-conductive glass is set to be contacted with conductive silver paste coating;(4), by dielectric materials layer and lead
Electric glass, which is placed in after fixing in Equipment for Heating Processing, to be warming up to 250-350 DEG C and is heat-treated, and heat treatment is down to room temperature after terminating
Photosensitive capacitor device is made.
In above-mentioned preparation method, because the dielectric material layer surface being fired into unavoidably can be uneven, led by setting
Electric silver paste coating can form even curface, in close contact therewith beneficial to electro-conductive glass.And use heat-treating methods can
Its contact surface is softened to a certain extent, can further improve the compactness of both contacts, so that improves electrical conduction can
By property and the service behaviour of capacitor.In heat treatment process, heating rate can be 1-2 DEG C/min, the guarantor heated up after terminating
Warm 45-80 minutes room temperatures that can cease fire and naturally cool to.
Claims (5)
1. a kind of light-operated variable condenser, it is characterised in that:The light-operated variable condenser includes control section and photosensitive capacitor, institute
Control section is stated to be provided with LED/light source, be the LED/light source power supply powered and the variable resistance being connected in supply line, the light
Quick electric capacity has dielectric materials layer, and the dielectric materials layer is made up of the light-sensitive material with small polarons effect, in dielectric material
The both sides of layer are sequentially provided with conductive layer and encapsulated layer, and the conductive layer and encapsulated layer of the dielectric materials layer one or both sides are by saturating
Luminescent material is constituted, to enable the light that LED/light source is sent to be radiated at through conductive layer and encapsulated layer on dielectric materials layer, and
Change the light intensity of LED/light source by adjusting the resistance of variable resistance, so as to change the dielectric constant of dielectric materials layer;Institute
The encapsulated layer stated is glass plate, and conductive layer is by attached conducting film on a glass and the conductive silver paste for being plated in dielectric material layer surface
Constitute;Conducting film on electro-conductive glass is contacted with conductive silver paste, and dielectric materials layer and electro-conductive glass fix after by 250-
350 DEG C of heat treatments.
2. a kind of light-operated variable condenser as claimed in claim 1, it is characterised in that:In the supply line of the LED/light source
It is connected to the galvanometer for measuring its supply current.
3. a kind of light-operated variable condenser as claimed in claim 1, it is characterised in that:Described light-sensitive material is Rutile Type
Titanium dioxide, barium titanate or strontium titanates.
4. a kind of light-operated variable condenser as claimed in claim 1, it is characterised in that:The conduction of the dielectric materials layer both sides
Layer is connected to positive wire and negative wire.
5. a kind of light-operated variable condenser as claimed in claim 1, it is characterised in that:Described dielectric materials layer is by with small
Fire and form after the repressed shaping of light-sensitive material of polaron effect.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510465005.6A CN105047412B (en) | 2015-08-03 | 2015-08-03 | A kind of light-operated variable condenser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510465005.6A CN105047412B (en) | 2015-08-03 | 2015-08-03 | A kind of light-operated variable condenser |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105047412A CN105047412A (en) | 2015-11-11 |
CN105047412B true CN105047412B (en) | 2017-11-07 |
Family
ID=54453875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510465005.6A Expired - Fee Related CN105047412B (en) | 2015-08-03 | 2015-08-03 | A kind of light-operated variable condenser |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105047412B (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2985757A (en) * | 1956-10-05 | 1961-05-23 | Columbia Broadcasting Syst Inc | Photosensitive capacitor device and method of producing the same |
CN201804646U (en) * | 2010-05-28 | 2011-04-20 | 刘勇 | Photoresistance potentiometer |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003294527A (en) * | 2002-04-04 | 2003-10-15 | Isao Tatsuno | Film-shaped photosensor and photosensor circuit using it |
-
2015
- 2015-08-03 CN CN201510465005.6A patent/CN105047412B/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2985757A (en) * | 1956-10-05 | 1961-05-23 | Columbia Broadcasting Syst Inc | Photosensitive capacitor device and method of producing the same |
CN201804646U (en) * | 2010-05-28 | 2011-04-20 | 刘勇 | Photoresistance potentiometer |
Non-Patent Citations (2)
Title |
---|
"A Gigantic Photoinduced Dielectric Constant of Quantum Paraelectric Perovskite Oxides Observed under a Weak DC Electric Field";Masaki TAKESADA等;《Journal of the Physical Society of Japan》;20030131;第72卷(第1期);第37-40页 * |
"Photoconduction in doped BaTiO3 singe crystals";G.Godefroy等;《Ferroelectrics》;20110207;第13卷(第1期);第309-312页 * |
Also Published As
Publication number | Publication date |
---|---|
CN105047412A (en) | 2015-11-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Zheng et al. | Dielectric modulated glass fiber fabric‐based single electrode triboelectric nanogenerator for efficient biomechanical energy harvesting | |
CN108093501B (en) | Graphene heating film and graphene heating film assembly suitable for power battery pack | |
US20120156827A1 (en) | Method for forming cadmium tin oxide layer and a photovoltaic device | |
US20190221742A1 (en) | Rapid metal oxide layer-specific photonic treatment using uv led for fabrication of flexible perovskite structures | |
TW201515249A (en) | Solar cell module with high electric susceptibility layer | |
CN109256475A (en) | A kind of perovskite light emitting diode and preparation method based on ultraviolet thermal anneal process | |
Shaban et al. | Optimization of ZnO thin film through spray pyrolysis technique and its application as a blocking layer to improving dye sensitized solar cell efficiency | |
CN105576134A (en) | Dual-mesoporous-layer perovskite solar cell and method of preparing same | |
CN103915260A (en) | Flexible-titanium-based dye sensitization solar cell module, manufacturing method and power supply | |
CN109065727A (en) | A kind of preparation method of perovskite solar battery | |
CN105870360A (en) | Perovskite solar cell and preparation method thereof | |
Ahmad et al. | Encapsulation protocol for flexible perovskite solar cells enabling stability in accelerated aging tests | |
CN105097992B (en) | A kind of preparation method of photosensitive capacitor device | |
CN105047412B (en) | A kind of light-operated variable condenser | |
JP2012146706A (en) | Ultraviolet sensor element | |
CN105070778B (en) | Photosensitive capacitor based on small polaron effect | |
CN110698077B (en) | Cesium-lead halogen perovskite thick film and preparation and application thereof | |
CN107819044A (en) | A kind of preparation method of antimony trisulfide base photodetector | |
CN110473955A (en) | Application of the perovskite composite oxide in ultra-wideband-light pyroelectric detector | |
CN110277464A (en) | The application of quantum dot composite material in the photovoltaic cells | |
JP2006060064A (en) | Method for heating thin film with microwave | |
CN114784197A (en) | Preparation method of carbon electrode mesoscopic perovskite battery, assembly and power generation system | |
Okuya et al. | Microwave heating to form porous TiO2 layer on high-haze FTO film for dye-sensitized solar cell | |
KR20140135950A (en) | Application of fluorine doped tin (iv) oxide sno2:f for making a heating layer on a photovoltaic panel, and the photovoltaic panel | |
US3215847A (en) | Electroluminescent imageproducing device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171107 Termination date: 20180803 |