CN104990651A - Silicon-sapphire differential capacitance type pressure sensor and manufacturing method - Google Patents
Silicon-sapphire differential capacitance type pressure sensor and manufacturing method Download PDFInfo
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- CN104990651A CN104990651A CN201510499940.4A CN201510499940A CN104990651A CN 104990651 A CN104990651 A CN 104990651A CN 201510499940 A CN201510499940 A CN 201510499940A CN 104990651 A CN104990651 A CN 104990651A
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Abstract
The invention provides a silicon-sapphire differential capacitance type pressure sensor and a manufacturing method. A differential capacitance type core part sensitive to pressure is composed through sapphire-silicon-sapphire direct bonding, due to the fact that creeping does not exist on two materials, the situation that the long-term stability of sensor characteristics becomes poor due to the slow release generated by the thermal effect through creeping is avoided, the long-term stability of the pressure sensor is improved, and the manufacturing method of the silicon-sapphire differential capacitance type pressure sensor is simple and easy to master and extremely high in economic value.
Description
Technical field
The present invention relates to a kind of pressure transducer, be specifically related to a kind of silicon-on-sapphire differential capacitance type pressure transducer and method for making.
Background technology
Commercially, pressure transducer is of a great variety, and at present, general pressure transducer is mainly sensitive material with silicon.In the principle of work of pressure transducer, silicon pressure sensor is mainly divided into pressure drag, electric capacity and resonant mode three kinds.
Silicon piezoresistance type manufacture is simple, obtain applying the most widely, but it is to responsive to temperature, and temperature drift is large, and precision is not high; Silicon resonance type precision is high, long-time stability good, but complex process, price are high, only has 2 companies to produce at present in the world.
The scheme that silicon capacitance adopts mainly forms sandwich structure with 2 Pyrex sheets and 1 silicon chip by anode linkage technique.2 Pyrex sheets make metal electrode as fixed electorde, silicon chip is formed the integral structure of the hard core in clamped limit-elastic membrane-centre with MEMS technology, in the middle of it hard core upper and lower surface form pressure-dependent differential capacitance as movable electrode with corresponding fixed electorde.The advantage of the program is that technique is simple, temperature drift is little; Shortcoming is that the thermal stress produced in technological process causes long-time stability poor by creep slow releasing because the creep of Pyrex is large.
Summary of the invention
The object of this invention is to provide a kind of with sapphire and silicon low-temperature-direct-bonding for core process, sapphire sheet with metal electrode is formed differential capacitance type silicon pressure sensor with the integral structure silicon chip with the hard core in clamped limit-elastic membrane-centre, there is the advantage that technique is simple, long-time stability are good.
In order to solve the problem, silicon-on-sapphire differential capacitance type pressure transducer provided by the invention have employed following technical scheme: silicon-on-sapphire differential capacitance type pressure transducer, comprise silicon movable electrode, it is characterized in that: centered by described silicon movable electrode, according to subsymmetric at both sides assembling sapphire sheet and ceramic substrate, described silicon movable electrode, sapphire sheet, ceramic substrate constitute pressure sensitive core, and the side of described pressure sensitive core is provided with lateral electrode.
Preferably, the centre of described sapphire sheet is provided with pressure guide hole, described sapphire two sides and pressure guide hole inwall are all provided with metal level, the surface of contact of described sapphire sheet and silicon movable electrode is polished surface, the metal level of described polished surface is as the metallization fixed electorde of pressure transducer, the metal level of another side as metallization weld layer during soldering processes, the metal level connection metal fixed electorde of pressure guide hole inwall and metallization weld layer.
Preferably, described silicon movable electrode comprises clamped limit, elastic membrane, middle hard core, and elastic membrane connects the hard core in clamped limit and centre, and middle hard wicking surface is lower than surface, clamped limit 2-4 micron.
Preferably, in described sapphire sheet, the metal level of polished surface is relative with the hard core in the centre on silicon chip.
Preferably, the centre of described ceramic substrate is provided with pressurization hole.
Preferably, the method for making of described silicon-on-sapphire differential capacitance type pressure transducer is as follows:
The first step: the silicon movable electrode making the integral structure with the hard core in clamped limit-elastic membrane-centre with MEMS technology on silicon chip;
Second step: get pressure guide hole with femto-second laser in the sapphire sheet of single-sided polishing;
3rd step: at chemical nickel plating on surface, the gold of sapphire sheet, forms the metal level of gross thickness 1 micron on the two sides of sapphire sheet and pressure guide hole surface; In the polished surface photoetching of sapphire sheet, remove the metal level of part beyond fixed electorde;
4th step: by the polished surface of two panels sapphire sheet respectively with two of silicon movable electrode in the face of accurate, fit, heat, pressurize (Direct Bonding), to the polished surface of sapphire sheet with silicon chip surface cleans and plasma-activated before bonding, anneal 3 to 10 hours at 300 to 500 DEG C of temperature after bonding;
5th step: make ceramic substrate, and assemble sensor: by potsherd chemical nickel plating, gold, form the metal level of gross thickness about 1 micron on surface, the two sides of potsherd, punching, welds together by metal brazing process and sapphire sheet;
6th step: make lateral electrode: polished 1 of individual devices side, form lateral electrode in the mode of mask evaporation.
Preferably, the described first step to the 4th step is all carry out on whole silicon chip and sapphire sheet, is distributed with multiple device, completes the first step and use femto-second laser scribing to the 4th step, be separated into independently individual devices.
Beneficial effect of the present invention is: adopt sapphire-silicon-on-sapphire Direct Bonding to form pressure-sensitive differential capacitance type core component, because this bi-material does not all have creep, avoiding thermal stress causes sensor characteristic long-time stability to be deteriorated by the slow releasing that creep produces, and the long-time stability of pressure transducer are improved.
Accompanying drawing explanation
Fig. 1 is the structural profile schematic diagram of the preferred embodiment of the present invention.
Fig. 2 is sapphire sheet structural profile schematic diagram of the present invention.
Fig. 3 is silicon movable electrode structural profile schematic diagram of the present invention.
Wherein: 1. silicon movable electrode; 2. sapphire sheet; 3. ceramic substrate; 4. pressure sensitive core; 5. lateral electrode; 11. clamped limits; 12. elastic membranes; Hard core in the middle of 13.; 21. pressure guide holes; 22. polished surfaces; 23. metallization fixed electordes; 24. metallization weld layers; 25. articulamentums; 31. pressurization holes.
Embodiment
In order to understand technical scheme provided by the invention more easily, below in conjunction with specific embodiments and the drawings, the present invention is described further.
Embodiment 1
As shown in Figure 1-Figure 3, silicon-on-sapphire differential capacitance type pressure transducer comprises silicon movable electrode 1, centered by described silicon movable electrode 1, according to subsymmetric at both sides assembling sapphire sheet 2 and ceramic substrate 3, described silicon movable electrode 1, sapphire sheet 2, ceramic substrate 3 constitute pressure sensitive core 4, and the side of described pressure sensitive core 4 is provided with lateral electrode 5.The centre of described sapphire sheet 2 is provided with pressure guide hole 21, two sides and pressure guide hole 21 inwall of described sapphire sheet 2 are all provided with metal level, described sapphire sheet 2 is polished surface 22 with the surface of contact of silicon movable electrode 1, the metal level of described polished surface 22 is as the metallization fixed electorde 23 of pressure transducer, the metal level of another side is as the metallization weld layer 24 during soldering processes, and the metal level of pressure guide hole 21 inwall is as articulamentum 25 connection metal fixed electorde 23 and metallization weld layer 24.
Described silicon movable electrode 1 comprises clamped limit 11, elastic membrane 12, middle hard core 13, and elastic membrane 12 connects the hard core 13 in clamped limit 11 and centre, and middle hard core 13 surface is lower than the surperficial 2-4 micron in clamped limit 11.
In described sapphire sheet 2, the metallization fixed electorde 23 of polished surface 22 is relative with the hard core 13 of the centre on silicon movable electrode 1.
The centre of described ceramic substrate 3 is provided with pressurization hole 31.
The principle of work of silicon-on-sapphire differential capacitance type pressure transducer is as follows: in silicon movable electrode, hard-hearted core is the movable electrode of capacitor, metal level in sapphire sheet is fixed electorde, when having pressure differential between two pressure guide holes, flexible sheet generation deformation on silicon movable electrode, space change between movable electrode and fixed electorde, the capacity of electric capacity also changes thereupon, and change and the pressure differential of the capacity of electric capacity exist corresponding relation, measures the capacity of electric capacity and the size of known pressure differential.
Embodiment 2
In order to make the silicon-on-sapphire differential capacitance type pressure transducer described in embodiment 1, have employed following method:
1, on silicon chip, the silicon movable electrode 1 of the integral structure with the hard core in clamped limit-elastic membrane-centre is made with MEMS technology;
2, in the sapphire sheet of single-sided polishing, pressure guide hole is got with femto-second laser;
3, chemical nickel plating, gold are carried out in sapphire sheet surface, form the metal level of gross thickness about 1 micron on the two sides of sapphire sheet and pressure guide hole surface; In the polished surface photoetching of sapphire sheet, the metal level in the middle of removing beyond hard core opposite segments;
4, by the polished surface of two panels sapphire sheet respectively with two of silicon movable electrode in the face of accurate, fit, heat, pressurize (Direct Bonding), to the polished surface of sapphire sheet with silicon chip surface cleans and plasma-activated before bonding.Anneal 3 to 10 hours at 300 to 500 DEG C of temperature after bonding;
5, above technique is all that (diameter representative value 100mm) carries out on large silicon chip and sapphire sheet, is distributed with multiple device.Use femto-second laser scribing after above technique completes, be separated into independently individual devices;
6,1 of individual devices side is polished, form lateral electrode (electrical connection for capacitor plate) in the mode of mask evaporation;
7, chemical nickel plating on surface, the gold of aluminum oxide ceramic sheet, form the metal level of gross thickness about 1 micron on surface, the two sides of aluminum oxide ceramic sheet, punching, welds together by metal brazing process and sapphire sheet.
Gordian technique of the present invention is as follows:
1, adopt sapphire-silicon-on-sapphire Direct Bonding to form pressure-sensitive differential capacitance type core component, because this bi-material does not all have creep, avoid thermal stress and cause sensor characteristic long-time stability to be deteriorated by the slow releasing that creep produces.
2, most crucial part is made up of silicon materials, and its linear expansion coefficient is 2.4 × 10
-6, sensor outer housing normally uses stainless steel material, its linear expansion coefficient about 20 × 10
-6, differ greatly.By silicon, (linear expansion coefficient is 2.4 × 10 in the present invention
-6)-sapphire (linear expansion coefficient 5.8 × 10
-6)-aluminum oxide ceramic (linear expansion coefficient 8 × 10
-6) be transitioned into stainless steel casing (linear expansion coefficient about 20 × 10 gradually
-6), decrease thermal stress, be conducive to the stability and the reliability that improve sensor.
Beneficial effect of the present invention is: adopt sapphire-silicon-on-sapphire Direct Bonding to form pressure-sensitive differential capacitance type core component, because this bi-material does not all have creep, avoiding thermal stress causes sensor characteristic long-time stability to be deteriorated by the slow releasing that creep produces, and the long-time stability of pressure transducer are improved.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (8)
1. silicon-on-sapphire differential capacitance type pressure transducer, comprise silicon movable electrode, it is characterized in that: centered by described silicon movable electrode, according to subsymmetric at both sides assembling sapphire sheet and ceramic substrate, described silicon movable electrode, sapphire sheet, ceramic substrate constitute pressure sensitive core, and the side of described pressure sensitive core is provided with lateral electrode.
2. silicon-on-sapphire differential capacitance type pressure transducer according to claim 1, it is characterized in that: the centre of described sapphire sheet is provided with pressure guide hole, described sapphire two sides and pressure guide hole inwall are all provided with metal level, the surface of contact of described sapphire sheet and silicon movable electrode is polished surface, the metal level of described polished surface is as the metallization fixed electorde of pressure transducer, the metal level of another side as metallization weld layer during soldering processes, the metal level connection metal fixed electorde of pressure guide hole inwall and metallization weld layer.
3. silicon-on-sapphire differential capacitance type pressure transducer according to claim 1, it is characterized in that: described silicon movable electrode comprises clamped limit, elastic membrane, middle hard core, elastic membrane connects the hard core in clamped limit and centre, and middle hard wicking surface is lower than surface, clamped limit 2-4 micron.
4. silicon-on-sapphire differential capacitance type pressure transducer according to claim 1, is characterized in that: in described sapphire sheet, the metal level of polished surface is relative with the hard core in the centre on silicon chip.
5. silicon-on-sapphire differential capacitance type pressure transducer according to claim 1, is characterized in that: the centre of described ceramic substrate is provided with pressurization hole.
6. provide a kind of method preparing silicon-on-sapphire differential capacitance type pressure transducer according to claim 1, it is characterized in that: the method for making of described silicon-on-sapphire differential capacitance type pressure transducer is as follows:
The first step: the silicon movable electrode making the integral structure with the hard core in clamped limit-elastic membrane-centre with MEMS technology on silicon chip;
Second step: get pressure guide hole with femto-second laser in the sapphire sheet of single-sided polishing;
3rd step: at chemical nickel plating on surface, the gold of sapphire sheet, forms the metal level of gross thickness 1 micron on the two sides of sapphire sheet and pressure guide hole surface; In the polished surface photoetching of sapphire sheet, remove the metal level of part beyond fixed electorde;
4th step: by the polished surface of two panels sapphire sheet respectively with two of silicon movable electrode in the face of accurate, fit, heat, pressurize (Direct Bonding), to the polished surface of sapphire sheet with silicon chip surface cleans and plasma-activated before bonding, anneal 3 to 10 hours at 300 to 500 DEG C of temperature after bonding;
5th step: make ceramic substrate, and assemble sensor: by potsherd chemical nickel plating, gold, form the metal level of gross thickness about 1 micron on surface, the two sides of potsherd, punching, welds together by metal brazing process and sapphire sheet;
6th step: make lateral electrode: polished 1 of individual devices side, form lateral electrode in the mode of mask evaporation.
7. the method for making of silicon-on-sapphire differential capacitance type pressure transducer according to claim 6, is characterized in that: the described first step to the 4th step is all carry out on whole silicon chip and sapphire sheet.
8. the method for making of silicon-on-sapphire differential capacitance type pressure transducer according to claim 7, it is characterized in that: carry out scribing with femto-second laser after completing the described first step to the 4th step, whole silicon chip and sapphire sheet are separated into independently individual devices.
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| CN201510499940.4A CN104990651A (en) | 2015-08-16 | 2015-08-16 | Silicon-sapphire differential capacitance type pressure sensor and manufacturing method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107101751A (en) * | 2017-02-28 | 2017-08-29 | 宝力马（苏州）传感技术有限公司 | A kind of novel capacitance-type pressure sensor and preparation method thereof |
| CN107907263A (en) * | 2017-12-13 | 2018-04-13 | 沈阳市传感技术研究所 | The capacitive pressure transducer of electrode single-end suspension |
| CN115585934A (en) * | 2022-12-14 | 2023-01-10 | 深圳市长天智能有限公司 | Silicon capacitance type pressure sensor and manufacturing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107101751A (en) * | 2017-02-28 | 2017-08-29 | 宝力马（苏州）传感技术有限公司 | A kind of novel capacitance-type pressure sensor and preparation method thereof |
| CN107907263A (en) * | 2017-12-13 | 2018-04-13 | 沈阳市传感技术研究所 | The capacitive pressure transducer of electrode single-end suspension |
| CN107907263B (en) * | 2017-12-13 | 2023-06-16 | 沈阳市传感技术研究所 | Capacitive pressure sensor with electrode suspended at single end |
| CN115585934A (en) * | 2022-12-14 | 2023-01-10 | 深圳市长天智能有限公司 | Silicon capacitance type pressure sensor and manufacturing method thereof |
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