CN104761154A - Method for preparation of ITO nanowire under catalysis of organic macromolecular material - Google Patents
Method for preparation of ITO nanowire under catalysis of organic macromolecular material Download PDFInfo
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Abstract
The invention discloses a method for direct preparation of an ITO nanowire with an organic macromolecular material as the catalyst. The method includes: firstly depositing monolayer polystyrene spheres on a substrate by a self-assembling technique, then utilizing polystyrene spheres as the catalyst to prepare the ITO nanowire by means of electronic beam evaporation, and then removing polystyrene by chloroform cleaning or annealing so as to obtain large area uniformly distributed acicular ITO nanowires. The method for preparation of the ITO nanowire with the organic macromolecular material as the catalyst provided by the invention has the characteristics of cheap required materials (low cost), low temperature (280-320DEG C), simple operation steps, and easy preparation, etc., and the prepared ITO nanowire has a length up to the micron dimension, acicular end, good thermal stability, and good conductivity and light transmittance performance, and has strong application value in the aspects of field emission display, nano sensors, LED luminescent devices and solar cells.
Description
[technical field]
The invention belongs to opto-electronic device field of material technology, particularly prepare the method for ITO (tin indium oxide) nano wire.
[background technology]
ITO material has good chemical stability and thermostability, has good tack and pattern etching characteristic to substrate, as the mature LED being applied to horizontal structure of a kind of transparent conductive film.In the LED of horizontal structure, add plating ITO material layer, can make the electric current of injection LED chip fast and spread uniformly, increase electronics and enliven performance, to reach the object promoting LED light efficiency of conversion.ITO material after annealing has good conductivity and resistance of oxidation, can as the cold-cathode material of Flied emission.ITO material has very high gas-sensitive property to predetermined substance (such as ethanol) simultaneously, also can be applied to sensor field.Based on ITO material, there is excellent conductivity at room temperature performance, the transmitance of visible ray and distinctive gas-sensitive property simultaneously, obtain investigation and application widely in recent years.
Nano thread structure has been widely used in the fields such as electronics, photoelectron, chemical/biological sensors, energy harvesting/conversion due to the electricity of its high surface-volume ratio and excellence, thermal property.From 1964, since gas-liquid-solid (VLS) growth mechanism is found by Wagner and Ellis, occurred the method for many novelties, such as chemical Vapor deposition process, molecular beam epitaxy etc. greatly promoted synthesis and the application of nano wire.The characteristic that ITO nano wire not only has nanostructure also maintains the high transmitance of ITO body material and the advantage of electroconductibility, can be effectively applied in solar cell, indicating meter, plasma body and LED.For preparation ITO nano wire, technology common be at present based on VLS mechanism utilize metal (gold) as catalyzer be prepared [C.O ' Dwyer, M.Szachowica G.Visimberga, et.al, Nature Nanotech., 4,239 (2009)], this method has the factor restrictions such as the high and manufacture craft of temperature high (800 ~ 900 DEG C), cost is more complicated, be difficult to realize scale operation and apply, and after preparing ITO nano wire, how effectively and up hill and dale removing metallic particles also become a difficult problem.
In order to solve the relevant difficult problem in ITO the fabricate of nanowires, retrieval finds, the Chinese patent that the method for different I TO the fabricate of nanowires has been applied for has: application number is 200610031534.6 and 200910024491.2.But known by analyzing, application number be 200610031534.6 patent application still adopts is utilize metal-Jin to carry out the preparation of ITO nano wire as catalyzer, fundamentally solve catalyzer cost high and be difficult to the problem removed; And the patent application that application number is 200910024491.2 adopts is that a kind of mode of electron beam evaporation plating directly prepares ITO nano wire, require harsher to the Controlling Technology of equipment, and the ITO nanowire length of preparation can only at nanometer scale (~ 100nm), morphology control is second-rate.
[summary of the invention]
A kind of organic macromolecule material that utilizes is the object of the present invention is to provide to prepare the method for ITO nano wire do catalysis, to solve above-mentioned prior art Problems existing.The inventive method, by applying polystyrene sphere on substrate, makes it as catalyzer, directly utilizes electron beam evaporation plating mode, realizes low cost and big area preparation that preparation needle-like ITO nanowire length reaches micron dimension (~ 2 μm).
To achieve these goals, the present invention adopts following technical scheme:
Utilize organic macromolecule material to prepare a method for ITO nano wire do catalysis, comprise the following steps:
Substrate is prepared polystyrene sphere array, carries out ICP etching p-poly-phenyl ethene bead with oxygen and modify;
ITO evaporation is carried out to the substrate being coated with polystyrene sphere;
The substrate leaching completed by evaporation ITO adopts chloroform to soak or the mode of high temperature annealing removes residual polystyrene, obtains ITO nano wire.
Preferably, individual layer polystyrene sphere array is prepared by substrate.
Preferably, the diameter of polystyrene sphere is 500nm.
Preferably, when carrying out ITO evaporation, underlayer temperature remains on 280 ~ 320 degrees Celsius, and one side substrate being attached with polystyrene sphere, just to target, by the sedimentation rate of 0.08 ~ 0.1nm/s, deposits after 15 ~ 20 minutes, stops evaporation, takes out substrate after cooling.
Preferably, during ITO evaporation, polystyrene sphere is in molten state.
Preferably, during ITO evaporation, adopt the target of In:Sn=90:10; In evaporation cavity, vacuum pressure is less than 5 × 10
-4pa.
Preferably, described substrate is quartz glass plate or GaN epitaxy sheet.
Preferably, high-temperature annealing process is: utilize quick anneal oven to anneal 10 ~ 15 minutes under 570 ~ 600 degrees Celsius, removes polystyrene sphere.
Preferably, be 100 DEG C/s from room temperature to the temperature rise rate of annealing temperature during high temperature annealing, the cooling rate after annealing is 80 DEG C/s.
Relative to prior art, the present invention has following beneficial effect:
In the present invention, when the quartz glass substrate being coated with polystyrene sphere is within the scope of temperature 280 ~ 320 DEG C, polystyrene sphere is in molten state.When ITO target molecular vapor (stannic oxide, Indium sesquioxide mixed gas molecule) is at deposited on substrates, the polystyrene sphere being in molten state has stronger absorption and adhesive ability to ITO molecule, high temperature ITO molecule is constantly assembled in the polystyrene sphere of molten state, when reaching supersaturation, just outwards separate out in the mode of crystallization, form the ITO nano wire of needle-like.
In the present invention, adopt organic macromolecule material to do catalysis, size and density all have good controllability, can select according to demand.Remove than being easier to, and noresidue.Can regulate and control ITO evaporation rate and underlayer temperature simultaneously, experiment has that temperature is low, power consumption less, controlled, the inclusion-free of ITO nanowire size and big area the feature such as to prepare.
Further experiment proves, the ITO nano wire prepared do catalysis with organic macromolecule material, has when diameter is certain, can realize the continuous growth of length, reach micron dimension.And the present invention prepare ITO nano wire by can than more completely keeping original pattern after annealing at 600 DEG C, have good conductivity and light transmission, this characteristic has stronger using value in LED and solar cell.
In the present invention, utilize the ITO nano wire that organic macromolecule material is prepared do catalysis, along with the increase of length, ITO nanowire end diameter diminishes until become tip-like gradually, the ITO nano wire of this pattern has significant field emission performance, and this characteristic has good application prospect in Field Emission Display.
A kind of method utilizing organic macromolecule material to do catalysis big area to prepare ITO nano wire that the present invention proposes, effectively reduce experimental cost, simple to operate, preparation technology is succinct, energy consumption is low and output is high, stability is good, acquisition is applied widely in nano-crystalline solar battery, nano-sensor and LED photovoltaic luminescent device.
[accompanying drawing explanation]
Fig. 1 is the operation schematic diagram that the inventive method prepares ITO nano wire.
Fig. 2 is field emission scanning electron microscope (SEM) figure of polystyrene sphere.
Fig. 3 is after evaporation ITO completes, and does not remove ITO nano wire field emission scanning electron microscope (SEM) figure of polyphenylacetylene catalyst.
Fig. 4 gets rid of ITO nano wire field emission scanning electron microscope (SEM) figure after polyphenylacetylene catalyst with chloroform.
Fig. 5 gets rid of ITO nano wire field emission scanning electron microscope (SEM) figure after polyphenylacetylene catalyst with annealing way.
[embodiment]
Embodiment 1
Refer to shown in Fig. 1, a kind of organic macromolecule material that utilizes of the present invention prepares the method for ITO nano wire do catalysis, comprise the following steps: the GaN epitaxy sheet of a 2 inches diameter to be put into respectively in acetone, ethanol (99.7%) solvent under room temperature ultrasonic cleaning 10 minutes, then dry up with nitrogen after deionized water rinsing.On the GaN epitaxy sheet cleaned up, self-assembly sedimentation diameter is the individual layer polystyrene sphere of 500nm, and depositional area covers whole substrate, uses field emission scanning electron microscope (SEM) to observe sample surfaces, obtains result as shown in Figure 2.Carry out after ICP etches 200 seconds with oxygen afterwards, then carry out the observation of SEM, obtain the result as shown in illustration in Fig. 2, can find out that polystyrene sphere surface is modified, and the spacing between bead increases.
The GaN epitaxy sheet being attached with polystyrene sphere is put on the specimen holder of electron-beam coating equipment, has the one side of polystyrene sphere just to ITO target.After loading ITO target (In:Sn=90:10), close evaporation cavity chamber door, vacuumize, make vacuum pressure in cavity be less than 5 × 10
-4pa, heats target and specimen holder, and temperature, at 300 DEG C, makes polystyrene sphere occur the state of melting.Regulate beam spot, deposit on GaN epitaxy sheet after target is evaporated.Regulate electron beam line afterwards, make sedimentation rate within the scope of 0.08 ~ 0.1nm/s, carry out vapor deposition after 15 minutes, stop evaporation, GaN epitaxy sheet is taken out after cooling, observed by field emission scanning electron microscope, can obtain result as shown in Figure 3, illustration is a result figure polystyrene sphere growing ITO nano wire.As can be seen from the figure ITO nano wire is interweaved, and diameter is at about 15nm, and length is the longest to be reached ~ 2 μm, and ITO nanowire end presents tip-like.
The GaN epitaxy sheet of ITO nano wire growth is had to immerse chloroform (CHCl
3) in solution ultrasonic 30 minutes, for thoroughly removing polyphenylacetylene catalyst.Then use deionized water rinsing, after naturally drying in atmosphere, observed by field emission scanning electron microscope, result as shown in Figure 4 can be obtained.Can find out that polystyrene is all removed, ITO nano wire form does not change, and distribution is more even.
Embodiment 2
The ITO evaporation of GaN epitaxy sheet is completed according to step in case study on implementation 1, put it into annealing furnace (rapid alloying stove, model: RTP-3 subsequently, heat-up rate 100 DEG C/s, cooling rate 80 DEG C/s) in arrange annealing temperature be 600 DEG C, adjustment nitrogen flow is 25ml/min, carries out annealing 10 minutes, takes out substrate after cooling, carry out field emission scanning electron microscope observation, result as shown in Figure 5 can be obtained.Can find out that ITO nano wire pattern after high temperature annealing is still kept intact, and possess good conductivity and light transmission.
Embodiment 3
Refer to shown in Fig. 1, a kind of organic macromolecule material that utilizes of the present invention prepares the method for ITO nano wire do catalysis, comprise the following steps: the GaN epitaxy sheet of a 2 inches diameter to be put into respectively in acetone, ethanol (99.7%) solvent under room temperature ultrasonic cleaning 10 minutes, then dry up with nitrogen after deionized water rinsing.On the GaN epitaxy sheet cleaned up, self-assembly sedimentation diameter is the individual layer polystyrene sphere of 500nm, and depositional area covers whole substrate.Carry out ICP with oxygen afterwards to etch 200 seconds p-poly-phenyl ethene bead surface and modify, and the spacing between bead is increased.
The GaN epitaxy sheet being attached with polystyrene sphere is put on the specimen holder of electron-beam coating equipment, has the one side of polystyrene sphere just to ITO target.After loading ITO target (In:Sn=90:10), close evaporation cavity chamber door, vacuumize, make vacuum pressure in cavity be less than 5 × 10
-4pa, heats target and specimen holder, and temperature, at 280 DEG C, makes polystyrene sphere occur the state of melting.Regulate beam spot, deposit on GaN epitaxy sheet after target is evaporated.Regulate electron beam line afterwards, make sedimentation rate within the scope of 0.08 ~ 0.1nm/s, carry out vapor deposition after 20 minutes, stop evaporation, after cooling, take out GaN epitaxy sheet.
The GaN epitaxy sheet of ITO nano wire growth is had to immerse chloroform (CHCl
3) in solution ultrasonic 30 minutes, for thoroughly removing polyphenylacetylene catalyst.
Embodiment 4
The ITO evaporation of GaN epitaxy sheet is completed according to step in case study on implementation 3, put it into annealing furnace (rapid alloying stove, model: RTP-3 subsequently, heat-up rate 100 DEG C/s, cooling rate 80 DEG C/s) in arrange annealing temperature be 570 DEG C, adjustment nitrogen flow is 25ml/min, carry out annealing 10 minutes, take out substrate after cooling, obtain ITO nano wire.
Embodiment 5
Refer to shown in Fig. 1, a kind of organic macromolecule material that utilizes of the present invention prepares the method for ITO nano wire do catalysis, comprise the following steps: the GaN epitaxy sheet of a 2 inches diameter to be put into respectively in acetone, ethanol (99.7%) solvent under room temperature ultrasonic cleaning 10 minutes, then dry up with nitrogen after deionized water rinsing.On the GaN epitaxy sheet cleaned up, self-assembly sedimentation diameter is the individual layer polystyrene sphere of 500nm, and depositional area covers whole substrate.Carry out ICP with oxygen afterwards to etch 200 seconds p-poly-phenyl ethene bead surface and modify, and the spacing between bead is increased.
The GaN epitaxy sheet being attached with polystyrene sphere is put on the specimen holder of electron-beam coating equipment, has the one side of polystyrene sphere just to ITO target.After loading ITO target (In:Sn=90:10), close evaporation cavity chamber door, vacuumize, make vacuum pressure in cavity be less than 5 × 10
-4pa, heats target and specimen holder, and temperature, at 320 DEG C, makes polystyrene sphere occur the state of melting.Regulate beam spot, deposit on GaN epitaxy sheet after target is evaporated.Regulate electron beam line afterwards, make sedimentation rate within the scope of 0.08 ~ 0.1nm/s, carry out vapor deposition after 18 minutes, stop evaporation, after cooling, take out GaN epitaxy sheet.
The GaN epitaxy sheet of ITO nano wire growth is had to immerse chloroform (CHCl
3) in solution ultrasonic 30 minutes, for thoroughly removing polyphenylacetylene catalyst.
Embodiment 6
The ITO evaporation of GaN epitaxy sheet is completed according to step in case study on implementation 5, put it into annealing furnace (rapid alloying stove, model: RTP-3 subsequently, heat-up rate 100 DEG C/s, cooling rate 80 DEG C/s) in arrange annealing temperature be 580 DEG C, adjustment nitrogen flow is 25ml/min, carry out annealing 12 minutes, take out substrate after cooling, obtain ITO nano wire.
According to above embodiment, the present invention utilizes a kind of organic macromolecule material as catalyzer, has prepared the big area ITO nano wire of even needle-like, possesses the features such as low temperature (about 300 DEG C), cost are low, simple operating steps.
Claims (10)
1. utilize organic macromolecule material to prepare a method for ITO nano wire do catalysis, it is characterized in that, comprise the following steps:
Substrate is prepared polystyrene sphere array, carries out ICP etching p-poly-phenyl ethene bead with oxygen and modify;
ITO evaporation is carried out to the substrate being coated with polystyrene sphere;
The substrate leaching completed by evaporation ITO adopts chloroform to soak or the mode of high temperature annealing removes residual polystyrene, obtains ITO nano wire.
2. a kind of organic macromolecule material that utilizes according to claim 1 prepares the method for ITO nano wire do catalysis, it is characterized in that, polystyrene sphere array prepared by substrate is individual layer polystyrene sphere array.
3. a kind of organic macromolecule material that utilizes according to claim 1 prepares the method for ITO nano wire do catalysis, it is characterized in that, the diameter of polystyrene sphere is 500nm.
4. a kind of organic macromolecule material that utilizes according to claim 1 prepares the method for ITO nano wire do catalysis, it is characterized in that, when carrying out ITO evaporation, underlayer temperature remains on 280 ~ 320 degrees Celsius, one side substrate being attached with polystyrene sphere, just to target, by the sedimentation rate of 0.08 ~ 0.1nm/s, deposits after 15 ~ 20 minutes, stop evaporation, after cooling, take out substrate.
5. a kind of organic macromolecule material that utilizes according to claim 1 prepares the method for ITO nano wire do catalysis, and it is characterized in that, during ITO evaporation, polystyrene sphere is in molten state.
6. a kind of organic macromolecule material that utilizes according to claim 1 prepares the method for ITO nano wire do catalysis, it is characterized in that, during ITO evaporation, adopts the target of In:Sn=90:10; In evaporation cavity, vacuum pressure is less than 5 × 10
-4pa.
7. a kind of organic macromolecule material that utilizes according to claim 1 prepares the method for ITO nano wire do catalysis, it is characterized in that, described substrate is quartz glass plate or GaN epitaxy sheet.
8. a kind of organic macromolecule material that utilizes according to claim 1 prepares the method for ITO nano wire do catalysis, it is characterized in that, high-temperature annealing process is: utilize quick anneal oven to anneal 10 ~ 15 minutes under 570 ~ 600 degrees Celsius, removes polystyrene sphere.
9. a kind of organic macromolecule material that utilizes according to claim 8 prepares the method for ITO nano wire do catalysis, it is characterized in that, be 100 DEG C/s from room temperature to the temperature rise rate of annealing temperature during high temperature annealing, the cooling rate after annealing is 80 DEG C/s.
10. a kind of organic macromolecule material that utilizes according to claim 1 prepares the method for ITO nano wire do catalysis, and it is characterized in that, ITO nanowire end presents tip-like.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105042492A (en) * | 2015-08-10 | 2015-11-11 | 苏州晶雷光电照明科技有限公司 | LED lamp strip capable of changing colors under different types of noise based on solar cell panel |
| CN107393977A (en) * | 2017-08-09 | 2017-11-24 | 西安交通大学 | A kind of ultra wide band antireflective film and preparation method thereof |
| CN107620038A (en) * | 2017-09-14 | 2018-01-23 | 中国科学院合肥物质科学研究院 | The preparation method of nano-metal particle array structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102610715A (en) * | 2012-03-31 | 2012-07-25 | 中国科学院半导体研究所 | Method for producing nano fluorescent powder-free gallium nitride white light-emitting diode |
| CN103794714A (en) * | 2014-01-30 | 2014-05-14 | 中国科学院半导体研究所 | Manufacturing method of stress sensor based on nanorod diode piezoelectric effect |
| US9093355B2 (en) * | 2011-04-08 | 2015-07-28 | Georgia Tech Research Corporation | High-resolution parallel-detection sensor array using piezo-phototronics effect |
-
2015
- 2015-03-03 CN CN201510094494.9A patent/CN104761154B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9093355B2 (en) * | 2011-04-08 | 2015-07-28 | Georgia Tech Research Corporation | High-resolution parallel-detection sensor array using piezo-phototronics effect |
| CN102610715A (en) * | 2012-03-31 | 2012-07-25 | 中国科学院半导体研究所 | Method for producing nano fluorescent powder-free gallium nitride white light-emitting diode |
| CN103794714A (en) * | 2014-01-30 | 2014-05-14 | 中国科学院半导体研究所 | Manufacturing method of stress sensor based on nanorod diode piezoelectric effect |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105042492A (en) * | 2015-08-10 | 2015-11-11 | 苏州晶雷光电照明科技有限公司 | LED lamp strip capable of changing colors under different types of noise based on solar cell panel |
| CN107393977A (en) * | 2017-08-09 | 2017-11-24 | 西安交通大学 | A kind of ultra wide band antireflective film and preparation method thereof |
| CN107620038A (en) * | 2017-09-14 | 2018-01-23 | 中国科学院合肥物质科学研究院 | The preparation method of nano-metal particle array structure |
| CN107620038B (en) * | 2017-09-14 | 2019-12-31 | 中国科学院合肥物质科学研究院 | Preparation method of nano metal particle array structure |
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