CN104578742A - Slow starting circuit - Google Patents
Slow starting circuit Download PDFInfo
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- CN104578742A CN104578742A CN201310504587.5A CN201310504587A CN104578742A CN 104578742 A CN104578742 A CN 104578742A CN 201310504587 A CN201310504587 A CN 201310504587A CN 104578742 A CN104578742 A CN 104578742A
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- switching transistor
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- soft
- power supply
- described switching
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
- H02H9/025—Current limitation using field effect transistors
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- Power Engineering (AREA)
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Abstract
The invention provides a slow starting circuit. The slow starting circuit comprises a first power supply, a second power supply, a capacitor,capacitance, a switching transistor and a first control module, wherein the capacitance is connected to the first power supply, the switching transistor is connected with the capacitance in series, and a grid of the switching transistor is connected to a first input terminal of the second power supply; the first control module is used for controlling the switching transistor to work in a linear region when the source-drain voltage VDS of the switching transistor is larger than a preset threshold value. For the slow starting circuit disclosed by the invention, when the VDS of the switching transistor VT1 is larger than the preset threshold value, the switching transistor VT1 is controlled to work in the linear region by the first control module, so that the switching transistor VT1 is equivalently used as impedance so as to restrain a surge current; for the slow starting circuit disclosed by the invention, the switching transistor VT1 is controlled according to the VDS, so that the requirement for the matching degree of the switching transistor VT1 and the capacitance C1 is lower, and the applicability is higher; in addition, the slow starting circuit disclosed by the invention also has the characteristics of simple structure, low cost and long working life.
Description
Technical field
The present invention relates to circuit field, particularly soft-start circuit.
Background technology
Soft-start circuit in communication equipment is mainly used in the input port needing to carry out hot plug or band capacitive load.Due to the momentary capacitance short circuit powered on; the electric current of input circuit increases to infinity instantaneously; the situation that input equipment is protected and switch is struck sparks may be caused to occur, and even more serious situation causes device failure on input circuit, and therefore necessity increases soft-start circuit on input circuit.
At present, the delay startup of communication power supply direct-flow input end mouth adopts switching device and control circuit to combine mostly, there is various scheme, but various scheme does not possess versatility, each defectiveness.Application number CN200810006443.6, " a kind of direct-current power supply slow startup control circuit " utilizes load and Capacitance parallel connection, by slowly opening the charging battery of metal-oxide-semiconductor realization to electric capacity, after capacitor charging completes, load starts, defect is that electric capacity needs to mate with metal-oxide-semiconductor, as electric capacity not yet complete charging time, the just conducting of its metal-oxide-semiconductor, still can make the device on excessive circuit damage loop, and allow metal-oxide-semiconductor mate with electric capacity to be very difficult, not at least to be suitable for bulky capacitor occasion; Application number CN200910167268.3, " soft-start circuit of power supply " adopts the mode of relay, buffer resistance and control circuit, utilizes buffer resistance to realize delay startup, and relay adhesive realizes normal band and carries, defect there is problem mechanical endurance, and it is large to account for board space; Application number CN200920018753.X, " a kind of soft-start circuit reducing power initiation power " utilizes metal-oxide-semiconductor and SPWM circuit control mode, by continuous switch MOS pipe in start-up course, reduce the start power consumption of metal-oxide-semiconductor, realize delaying, defect builds SPWM circuit relative complex, and cost also can increase, continuous switch MOS pipe, can generate stress simultaneously.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of soft-start circuit, can solve all problems of above-mentioned patent.
For solving the problems of the technologies described above, embodiments of the invention provide a kind of soft-start circuit, comprising:
First power supply;
Second source;
Access the electric capacity of the first power supply;
With the switching transistor of described capacitances in series, the first input end of its grid access second source;
First control module, for the source-drain voltage V at described switching transistor
dSwhen being greater than predetermined threshold value, controlling described switching transistor and be operated in linear zone.
Wherein, described first control module specifically comprises:
Sampling unit, for gathering the V of described switching transistor
dS, as described V
dSwhen being greater than predetermined threshold value, according to described V
dSworking signal is provided to described first control unit;
Voltage regulation unit, provides voltage for the source electrode that is described switching transistor according to described working signal and grid, makes described switching transistor be operated in linear zone.
Wherein, described soft-start circuit also comprises:
Second control module, for the V when described switching transistor
dSwhen being less than predetermined threshold value, controlling described switching transistor and be operated in an ohm conducting district.
Wherein, described switching transistor is N-MOS pipe, and its drain electrode is connected with described electric capacity, its source ground; Described second source also comprises the second input;
The input of described voltage regulation unit is connected with the second input of described second source, and its output is connected with the grid of described switching transistor, and is connected with the source electrode of described switching transistor by the first control switch;
Described sampling unit also for: as the V collected
dSwhen being less than predetermined threshold value, disconnect described control switch; As the V collected
dSwhen being greater than predetermined threshold value, closed described control switch.
Wherein, described second source also comprises the 3rd input;
Described second control module comprises first can breakdown diode, and its negative pole is connected with described 3rd input, and its positive pole is connected with the source electrode of described switching transistor;
When described first control switch disconnects, described second source punctures described first can breakdown diode arrive the source electrode of described switching transistor, makes described switching transistor be operated in an ohm conducting district.
Wherein, described switching transistor is P-MOS pipe, and its drain electrode is connected with described electric capacity, described first power supply of its source electrode access;
The input of described voltage regulation unit is connected with described first power supply, and its output is connected with the source electrode of described switching transistor, and is connected with the grid of described switching transistor by the second control switch;
Described sampling unit also for: as the V collected
dSwhen being less than predetermined threshold value, disconnect described control switch; As the V collected
dSwhen being greater than predetermined threshold value, closed described control switch.
Wherein, described second control module comprises second can breakdown diode, and its negative pole is connected with described first power supply, and its positive pole is connected with the grid of described switching transistor and the first input end of described second source respectively; The voltage of described second source is less than the voltage of described first power supply;
When described second control switch disconnects, described first power supply punctures described second can breakdown diode arrive the grid of described switching transistor, makes described switching transistor be operated in an ohm conducting district.
Wherein, described soft-start circuit also comprises:
Temperature compensation module; Its control end is connected with described sampling module, for carrying out temperature-compensating according to described working signal to described.
Wherein, described temperature compensation module access is between described voltage regulation unit and described control switch.
Wherein, described sampling unit accesses the V of described switching transistor especially by bleeder circuit
dS;
Described bleeder circuit comprises the first resistance, the second resistance and the 3rd resistance; Wherein
Described first resistance first end is connected with the source electrode of described switching transistor, and its second end is connected with the first end of described 3rd resistance;
Described second resistance first end is connected with the drain electrode of described switching transistor, and its second end is connected with the first end of described 3rd resistance;
Second end of described 3rd resistance is connected with described sampling unit.
Such scheme of the present invention has following beneficial effect:
Soft-start circuit of the present invention is at the V of switching transistor
dSwhen being greater than predetermined threshold value (impulse current of soft-start circuit is excessive), by the first control module control switch transistor in linear zone, switching transistor equivalence is made to become an impedance to suppress impulse current.Because the present invention is according to V
dScontrol switching transistor, therefore require lower to the matching degree of transistor AND gate electric capacity, applicability is stronger; In addition, soft-start circuit of the present invention also has that structure is simple, cost is low, the feature of long working life.
Accompanying drawing explanation
Fig. 1 is the structural representation of soft-start circuit in the present invention;
Fig. 2 be in the present invention the first control module at the structural representation of soft-start circuit;
Fig. 3 be in the present invention the second control module at the structural representation of soft-start circuit;
Fig. 4 be in the present invention N-MOS pipe as the detailed circuit diagram of the soft-start circuit of switching transistor;
Fig. 5 be in the present invention P-MOS pipe as the detailed circuit diagram of the soft-start circuit of switching transistor.
Embodiment
For making the technical problem to be solved in the present invention, technical scheme and advantage clearly, be described in detail below in conjunction with the accompanying drawings and the specific embodiments.
As shown in Figure 1, a kind of soft-start circuit, comprising:
First power supply VCC1;
Second source VCC2;
Access the electric capacity C1 of the first power supply VCC1;
The switching transistor VT1 connected with described electric capacity C1, the first input end of its grid access second source VCC2 is 1.;
First control module, for the source-drain voltage V at described switching transistor
dSwhen being greater than predetermined threshold value, controlling described switching transistor and be operated in linear zone.
Soft-start circuit of the present invention is at the V of switching transistor VT1
dSwhen being greater than predetermined threshold value (impulse current of soft-start circuit is excessive), being operated in linear zone by the first control module control switch transistor VT1, making switching transistor VT1 equivalence become an impedance to suppress impulse current.Because the present invention is according to V
dScontrol switching transistor VT1, therefore require lower to the matching degree of switching transistor VT1 and electric capacity C1, applicability is stronger; In addition, soft-start circuit of the present invention also has that structure is simple, cost is low, the feature of long working life.
Wherein, in the above embodiment of the present invention, described first control module specifically comprises:
Sampling unit, for gathering the V of described switching transistor
dS, as described V
dSwhen being greater than predetermined threshold value, according to described V
dSworking signal is provided to described first control unit;
Voltage regulation unit, provides voltage for the source electrode that is described switching transistor according to described working signal and grid, makes described switching transistor be operated in linear zone.
In addition, as shown in Figure 2, electric capacity C1 is in charging process, the impulse current produced can reduce gradually, destroy until do not produce other element in circuit, now can make the complete conducting of switching transistor VT1, make electric capacity C1 quick charge complete, therefore, in the above embodiment of the present invention, described soft-start circuit also comprises:
Second control module, for the V as described switching transistor VT1
dSwhen being less than predetermined threshold value, controlling described switching transistor VT1 and be operated in an ohm conducting district.
In addition, in the present invention, soft-start circuit adopts switching transistor VT1 type different, and its circuit structure also can be distinct, adopts N-MOS pipe below and adopt the circuit structure of P-MOS pipe to be described respectively on the basis of foregoing embodiments to switching transistor VT1.
< mode one >
As shown in Figure 4, described switching transistor is N-MOS pipe, and its drain electrode is connected with described electric capacity, its source ground; 2. described second source also comprises the second input;
2. the input of described voltage regulation unit is connected with second input of described second source VCC2, and its output is connected with the grid of described switching transistor VT1, and is connected with the source electrode of described switching transistor VT1 by the first control switch;
Described sampling unit also for: as the V collected
dSwhen being less than predetermined threshold value, disconnect described control switch; As the V collected
dSwhen being greater than predetermined threshold value, closed described control switch.
Particularly, 3. described second source VCC2 also comprises the 3rd input;
Described second control module comprises first can breakdown diode VD1, and 3. its negative pole is connected with described 3rd input, and its positive pole is connected with the source electrode of described switching transistor VT1;
When described first control switch disconnects, described second source VCC2 punctures described first can breakdown diode VD1 arrive the source electrode of described switching transistor VT1, makes described switching transistor VT1 be operated in an ohm conducting district.
Be that the operation principle of the soft-start circuit of N-MOS pipe is described in detail below to switching transistor VT1:
As shown in Figure 4, at VCC1 powered on moment, electric capacity C1 instantaneous short circuit, VCC1 is all loaded into source electrode and the drain electrode of switching transistor VT1, now V
dSbe greater than predetermined threshold value, sampling unit sends a control signal to the first control switch, makes it close, and sampling unit produces working signal to voltage regulation unit simultaneously, voltage regulation unit is powered, to change the gate source voltage V of switching transistor VT1 to the source electrode of switching transistor VT1 and grid according to working signal
gS, make it be operated in linear zone, suppression impulse current (its principle is based on transistor characteristic, i.e. linear zone:
).After this, along with the voltage in electric capacity C1 accumulates gradually, V is made
dSreduce gradually, until when being less than predetermined threshold value, sampling unit transmits control signal to the first control switch, makes it disconnect, and sampling unit stops sending working signal to voltage regulation unit simultaneously, voltage regulation unit is caused to quit work, now 2. second input of second source VCC2 disconnects, and second source VCC2 is increased through the 3rd input voltage 3., and puncturing first can breakdown diode VD1, arrive the source electrode of switching transistor VT1, make its gate source voltage V
gSchange, be finally operated in an ohm conducting district (its principle is based on transistor characteristic equally, i.e. ohm conducting district:
).Afterwards, after electric capacity C1 charging complete, the first power supply VCC1 flows to load, and delay startup completes.Wherein, described first control switch is preferably delay switch, prevents electric current from producing stress by slowly closing or disconnecting.It is pointed out that above-mentioned sampling unit and voltage regulation unit are technological means conventional in circuit field, therefore not to repeat here herein.
< mode two >
As shown in Figure 5, when described switching transistor VT1 is P-MOS pipe, its drain electrode is connected with described electric capacity, the described first power supply VCC1 of its source electrode access;
The input of described voltage regulation unit is connected with described first power supply VCC1, and its output is connected with the source electrode of described switching transistor VT1, and is connected with the grid of described switching transistor VT1 by the second control switch;
Described sampling unit also for: as the V collected
dSwhen being less than predetermined threshold value, disconnect described control switch; As the V collected
dSwhen being greater than predetermined threshold value, closed described control switch.
Particularly, described second control module comprises second can breakdown diode VD2, and its negative pole is connected with described first power supply VCC1, and its positive pole is connected with the grid of described switching transistor VT1; The voltage of described second source is less than the voltage of described first power supply;
When described second control switch disconnects, described first power supply VCC1 punctures described second can breakdown diode VD2 arrive the grid of described switching transistor VT1, makes described switching transistor VT1 be operated in an ohm conducting district.
Be that the operation principle of the soft-start circuit of P-MOS pipe is described in detail below to switching transistor VT1:
As shown in Figure 5, at VCC1 powered on moment, electric capacity C1 instantaneous short circuit, VCC1 is all loaded into source electrode and the drain electrode of switching transistor VT1, now V
dSbe greater than predetermined threshold value, sampling unit transmits control signal to the second control switch, and make it close, meanwhile, sampling unit is according to V
dSsend working signal to voltage regulation unit, voltage regulation unit is powered, to change the gate source voltage V of switching transistor VT1 to the source electrode of switching transistor VT1 and grid according to working signal
gS, make it be operated in linear zone, suppress impulse current.After this, along with the voltage in electric capacity C1 accumulates gradually, V is made
dSreduce gradually, until when being less than predetermined threshold value, sampling unit transmits control signal to the second control switch, makes it disconnect, and sampling unit stops sending working signal to voltage regulation unit simultaneously, voltage regulation unit is caused to quit work, the circuit that now the first power supply VCC1 arrives A point through voltage regulation unit disconnects, and making the first power supply VCC1 arrive second can the voltage increase of breakdown diode VD2, thus puncture this second can breakdown diode VD2, and arrive the grid of switching transistor VT1, make its gate source voltage V
gSchange, be finally operated in an ohm conducting district.Afterwards, after electric capacity C1 charging complete, the first power supply VCC1 flows to load, and delay startup completes.Wherein, described second control switch is preferably delay switch, prevents electric current from producing stress by slowly closing or disconnecting.
In addition, due to operation interval and the V of switching transistor VT1
gSrelevant, the threshold voltage according to the known GS end of transistor device handbook can arrive temperature influence, and therefore, for ensureing the operation interval of stability contorting switching transistor VT1, soft-start circuit of the present invention also comprises:
Temperature compensation module; Its control end is connected with described sampling module, for carrying out temperature-compensating according to described working signal to described.
Particularly, as shown in Figure 4 and Figure 5, described temperature compensation module access is between described voltage regulation unit and described control switch, and in Fig. 4, the source of working power of temperature compensation module is in second source, and in Fig. 5, the working power of temperature compensation module then derives from the first power supply.It is pointed out that prior art has had a lot for the technique for temperature compensation of switching transistor, because the circuit structure related to is not unique, so no longer repeat temperature compensation module herein.
In addition, as shown in Figure 4 and Figure 5, described sampling unit accesses the V of described switching transistor VT1 especially by bleeder circuit
dS, to make V
dSpoint to be depressed in voltage range that sampling unit can work, wherein
Described bleeder circuit comprises the first resistance R1, the second resistance R2 and the 3rd resistance R3; Wherein
Described first resistance R1 first end is connected with the source electrode of described switching transistor VT1, and its second end is connected with the first end of described 3rd resistance R3;
Described second resistance R2 first end is connected with the drain electrode of described switching transistor VT1, and its second end is connected with the first end of described 3rd resistance R3;
Second end of described 3rd resistance R3 is connected with described sampling unit.
In sum, the matching degree of the present invention to switching transistor VT1 and electric capacity C1 requires lower, and applicability is stronger; Further, soft-start circuit of the present invention also has that structure is simple, cost is low, the feature of long working life.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the prerequisite not departing from principle of the present invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. a soft-start circuit, is characterized in that, comprising:
First power supply;
Second source;
Access the electric capacity of the first power supply;
With the switching transistor of described capacitances in series, the first input end of its grid access second source;
First control module, for the source-drain voltage V at described switching transistor
dSwhen being greater than predetermined threshold value, controlling described switching transistor and be operated in linear zone.
2. soft-start circuit according to claim 1, is characterized in that, described first control module specifically comprises:
Sampling unit, for gathering the V of described switching transistor
dS, as described V
dSwhen being greater than predetermined threshold value, according to described V
dSworking signal is provided to described first control unit;
Voltage regulation unit, provides voltage for the source electrode that is described switching transistor according to described working signal and grid, makes described switching transistor be operated in linear zone.
3. soft-start circuit according to claim 2, is characterized in that, also comprises:
Second control module, for the V when described switching transistor
dSwhen being less than predetermined threshold value, controlling described switching transistor and be operated in an ohm conducting district.
4. soft-start circuit according to claim 3, is characterized in that, described switching transistor is N-MOS pipe, and its drain electrode is connected with described electric capacity, its source ground; Described second source also comprises the second input;
The input of described voltage regulation unit is connected with the second input of described second source, and its output is connected with the grid of described switching transistor, and is connected with the source electrode of described switching transistor by the first control switch;
Described sampling unit also for: as the V collected
dSwhen being less than predetermined threshold value, disconnect described control switch; As the V collected
dSwhen being greater than predetermined threshold value, closed described control switch.
5. soft-start circuit according to claim 4, is characterized in that,
Described second source also comprises the 3rd input;
Described second control module comprises first can breakdown diode, and its negative pole is connected with described 3rd input, and its positive pole is connected with the source electrode of described switching transistor;
When described first control switch disconnects, described second source punctures described first can breakdown diode arrive the source electrode of described switching transistor, makes described switching transistor be operated in an ohm conducting district.
6. soft-start circuit according to claim 3, is characterized in that, described switching transistor is P-MOS pipe, and its drain electrode is connected with described electric capacity, described first power supply of its source electrode access;
The input of described voltage regulation unit is connected with described first power supply, and its output is connected with the source electrode of described switching transistor, and is connected with the grid of described switching transistor by the second control switch;
Described sampling unit also for: as the V collected
dSwhen being less than predetermined threshold value, disconnect described control switch; As the V collected
dSwhen being greater than predetermined threshold value, closed described control switch.
7. soft-start circuit according to claim 6, is characterized in that,
Described second control module comprises second can breakdown diode, and its negative pole is connected with described first power supply, and its positive pole is connected with the grid of described switching transistor and the first input end of described second source respectively; The voltage of described second source is less than the voltage of described first power supply;
When described second control switch disconnects, described first power supply punctures described second can breakdown diode arrive the grid of described switching transistor, makes described switching transistor be operated in an ohm conducting district.
8. the soft-start circuit according to any one of claim 4 to 7, is characterized in that, also comprises:
Temperature compensation module; Its control end is connected with described sampling module, for carrying out temperature-compensating according to described working signal to described.
9. soft-start circuit according to claim 7, is characterized in that, described temperature compensation module access is between described voltage regulation unit and described control switch.
10. the soft-start circuit according to any one of claim 2 to 7, is characterized in that, described sampling unit accesses the V of described switching transistor especially by bleeder circuit
dS;
Described bleeder circuit comprises the first resistance, the second resistance and the 3rd resistance; Wherein
Described first resistance first end is connected with the source electrode of described switching transistor, and its second end is connected with the first end of described 3rd resistance;
Described second resistance first end is connected with the drain electrode of described switching transistor, and its second end is connected with the first end of described 3rd resistance;
Second end of described 3rd resistance is connected with described sampling unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310504587.5A CN104578742B (en) | 2013-10-23 | 2013-10-23 | A kind of soft-start circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310504587.5A CN104578742B (en) | 2013-10-23 | 2013-10-23 | A kind of soft-start circuit |
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| CN104578742A true CN104578742A (en) | 2015-04-29 |
| CN104578742B CN104578742B (en) | 2019-03-29 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106787667A (en) * | 2017-02-07 | 2017-05-31 | 北京百卓网络技术有限公司 | Switching Power Supply soft-start circuit and control method |
| CN107026436A (en) * | 2017-04-17 | 2017-08-08 | 顺丰科技有限公司 | Electricity is relieved a garrison the functional module of firing circuit, electron speed regulator and high-voltage great-current |
| CN111371439A (en) * | 2020-03-10 | 2020-07-03 | 深圳市九九智能科技有限公司 | Buffer time delay adjusting device |
| CN114079370A (en) * | 2020-08-17 | 2022-02-22 | 维谛公司 | Output hot plug circuit |
| CN115940902A (en) * | 2022-12-31 | 2023-04-07 | 广州慧智微电子股份有限公司 | Switching circuit |
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| CN101640412A (en) * | 2009-09-02 | 2010-02-03 | 中兴通讯股份有限公司 | Soft-starting circuit of power supply |
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| CN103915996A (en) * | 2013-01-08 | 2014-07-09 | 中兴通讯股份有限公司 | Direct-current power supply slow start control circuit and control method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106787667A (en) * | 2017-02-07 | 2017-05-31 | 北京百卓网络技术有限公司 | Switching Power Supply soft-start circuit and control method |
| CN107026436A (en) * | 2017-04-17 | 2017-08-08 | 顺丰科技有限公司 | Electricity is relieved a garrison the functional module of firing circuit, electron speed regulator and high-voltage great-current |
| CN111371439A (en) * | 2020-03-10 | 2020-07-03 | 深圳市九九智能科技有限公司 | Buffer time delay adjusting device |
| CN114079370A (en) * | 2020-08-17 | 2022-02-22 | 维谛公司 | Output hot plug circuit |
| CN115940902A (en) * | 2022-12-31 | 2023-04-07 | 广州慧智微电子股份有限公司 | Switching circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104578742B (en) | 2019-03-29 |
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