CN104300091B - Oled device packaging structure and manufacturing method thereof - Google Patents
Oled device packaging structure and manufacturing method thereof Download PDFInfo
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- CN104300091B CN104300091B CN201410475529.9A CN201410475529A CN104300091B CN 104300091 B CN104300091 B CN 104300091B CN 201410475529 A CN201410475529 A CN 201410475529A CN 104300091 B CN104300091 B CN 104300091B
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- oled
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- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 238000004806 packaging method and process Methods 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 36
- 230000004888 barrier function Effects 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 34
- 239000004793 Polystyrene Substances 0.000 claims description 31
- 229920002223 polystyrene Polymers 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 26
- 239000000839 emulsion Substances 0.000 claims description 23
- 239000008187 granular material Substances 0.000 claims description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 15
- 229920000058 polyacrylate Polymers 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 11
- 229910000077 silane Inorganic materials 0.000 claims description 9
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 238000001291 vacuum drying Methods 0.000 claims description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 238000007720 emulsion polymerization reaction Methods 0.000 claims description 5
- 238000011065 in-situ storage Methods 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- 239000012153 distilled water Substances 0.000 claims description 4
- 239000003999 initiator Substances 0.000 claims description 4
- 238000010992 reflux Methods 0.000 claims description 4
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 claims description 3
- 238000007385 chemical modification Methods 0.000 claims description 3
- 230000002209 hydrophobic effect Effects 0.000 claims description 3
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 3
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 claims description 3
- 239000005050 vinyl trichlorosilane Substances 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 229920006389 polyphenyl polymer Polymers 0.000 claims description 2
- -1 γ-glycidylpropyl-trimethoxy silicon Alkane Chemical class 0.000 claims description 2
- 229940070721 polyacrylate Drugs 0.000 claims 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- 150000001336 alkenes Chemical class 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 239000011591 potassium Substances 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 46
- 239000010408 film Substances 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229920005570 flexible polymer Polymers 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 3
- 235000019394 potassium persulphate Nutrition 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- LTOKKZDSYQQAHL-UHFFFAOYSA-N trimethoxy-[4-(oxiran-2-yl)butyl]silane Chemical compound CO[Si](OC)(OC)CCCCC1CO1 LTOKKZDSYQQAHL-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000007773 negative electrode material Substances 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 230000032696 parturition Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Laminated Bodies (AREA)
- Electroluminescent Light Sources (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to the technical field of displaying, and discloses an OLED device packaging structure and a manufacturing method thereof to solve the problems that according to an OLED structure in the prior art, an OLED working layer is damaged easily in the process of manufacturing a barrier layer, and an OLED device is out of operation. The OLED device packaging structure comprises an upper substrate and a lower substrate, an OLED working layer is arranged between the upper substrate and the lower substrate, a packaging layer is arranged on the surface of the OLED working layer and attached to the inner surface of the upper substrate and the inner surface of the lower substrate, and moisture barrier layers are arranged on the outer surface of the upper substrate and the outer surface of the lower substrate. The OLED device packaging structure and the manufacturing method thereof are used in liquid crystal displays.
Description
Technical field
The present invention relates to display technology field, more particularly, to a kind of OLED encapsulating structure and preparation method thereof.
Background technology
Organic electroluminescent LED (Organic Light-Emitting Diode, OLED), OLED display with
LCD display device is compared, have thin, light, wide viewing angle, actively luminous, glow color continuously adjustabe, low cost, fast response time,
The advantages of energy consumption is little, driving voltage is low, operating temperature range width, simple production process, luminous efficiency are high.Because OLED shows dress
Put and there is the incomparable advantage of other display, there is fine application prospect, therefore obtained industrial circle and scientific circles
Greatly pay close attention to.
OLED includes upper and lower substrate, anode, organic thin film layer, negative electrode, OLED working lining, encapsulated layer etc..Due to
Electronics to be injected from negative electrode, this requires that cathode work function number is more low better during OLED work, but, for making negative electrode
Material is typically metal, the such as metal such as aluminum, magnesium, calcium, due to these metals general relatively more active it is easy to penetrate
There is chemical reaction in steam, lead to OLED disabler.Therefore OLED must be packaged, so that OLED
Each functional layer becomes to separate with the steam in air, oxygen etc..
At present, it is typically employed in setting barrier layer between the encapsulated layer of OLED and substrate, to stop steam, oxygen etc.
The infiltration of composition.Because barrier layer must be attached to the surface of encapsulated layer, therefore it is easy to make during making barrier layer
Become the damage of OLED working lining, lead to OLED to lose efficacy.
Content of the invention
Embodiments of the invention provide a kind of OLED encapsulating structure and preparation method thereof, of the prior art to solve
OLED structure easily causes OLED working lining and damages when making barrier layer, leads to the problem that OLED lost efficacy.
For reaching above-mentioned purpose, embodiments of the invention adopt the following technical scheme that：
A kind of OLED encapsulating structure, including upper and lower substrate, is provided with OLED working lining between described upper and lower substrate, institute
State OLED working lining surface and be provided with encapsulated layer, described encapsulated layer is fitted with the inner surface of described upper and lower substrate respectively, described upper,
The outer surface of infrabasal plate is equipped with water vapor barrier layer.
Wherein, described water vapor barrier layer includes the micrometer structure layer fitted with described upper substrate or infrabasal plate, described micron
Structure sheaf is provided with array pattern, and described array pattern is coated with the nanostructured layers with water-proof function.
Preferably, described array pattern is concaveconvex structure；Described concaveconvex structure includes groove, table in the longitudinal direction of described groove
Face is rectangle or trapezoidal.
Wherein, the material of described micrometer structure layer is Polyacrylate materials, and described polyacrylate material includes bearing
Property polyacrylate organic film material.
Preferably, described nanostructured layers are granules of polystyrene coating or the silica dioxide granule through silicic acid anhydride
Coating.
Further, described upper and lower substrate is the flexible base board of flexible polymer material.
Wherein, the material of described flexible base board is PET or PBT.
A kind of method making above-mentioned OLED encapsulating structure, all makes described in the outer surface of described upper and lower substrate
Water vapor barrier layer comprises the following steps：
First, make micrometer structure layer from negativity polyacrylate organic film material, then pass through photoetching process or face
Interior typography obtains described array pattern in described micrometer structure layer；
Second, polystyrene emulsion is obtained by the method for in-situ emulsion polymerization, described polystyrene emulsion is coated in
The Surface Creation granules of polystyrene of described array pattern；Or, pass through Plasma-CVD from silicon dioxide
Method by the surface of array pattern described in silica dioxide granule plated film.
Wherein, polystyrene emulsion is obtained by the method for in-situ emulsion polymerization, described polystyrene emulsion is coated in
The Surface Creation granules of polystyrene of described array pattern comprises the following steps：
The mixture of 100 parts of styrene, 6 parts of acrylic acid and 1000 parts of distilled water is added and is furnished with reflux condensing tube, temperature
In meter, the four-neck flask of agitator；It is stirred, stir speed (S.S.) is 300 rpm, logical nitrogen 2 minutes in whipping process；Add 1
Part potassium peroxydisulfate initiator；Then under nitrogen protection, in 70 DEG C of water-baths, reaction obtains polystyrene emulsion in 30 minutes；To react
The described polystyrene emulsion obtaining passes through the method uniform fold of rotary coating on described array pattern, vacuum drying time
30 seconds, vacuum drying temperature was 50 DEG C, and vacuum values are 26Pa；
From silicon dioxide by the method for Plasma-CVD by array described in silica dioxide granule plated film
The surface of figure comprises the following steps：
Obtain being coated with silicon dioxide substrate chemical modification in the hexane solution of 1.0 wt% silane couplers within 1 minute
To super-hydrophobicity interface.
Preferably, silane coupler includes γ-methacryloxypropyl-trimethoxy silane, vinyl trichlorine silicon
Alkane, γ-glycidylpropyl-trimethoxy silane.
In OLED encapsulating structure provided in an embodiment of the present invention and preparation method thereof, due to the appearance of upper and lower substrate
Face is equipped with water vapor barrier layer, and this water vapor barrier layer can stop that steam, oxygen enter OLED working lining, and OLED working lining is risen
Effect to protection.Because water vapor barrier layer is arranged on the outer surface of upper and lower substrate, avoid when making water vapor barrier layer
Destruction to encapsulated layer, thus avoid that OLED working lining is damaged and the situation that occurs OLED to lose efficacy.
Brief description
Fig. 1 is a kind of schematic cross-section of OLED encapsulating structure provided in an embodiment of the present invention；
Fig. 2 is the enlarged drawing of part A in Fig. 1.
Specific embodiment
Below in conjunction with the accompanying drawings the embodiment of the present invention is described in detail.
In the description of this specification, specific features, structure, material or feature can be in any one or more realities
Apply in example or example and combine in an appropriate manner.
Referring to Fig. 1, embodiments provide a kind of OLED encapsulating structure, this structure includes upper and lower substrate
(11,12), are provided with OLED working lining 13 between upper and lower substrate (11,12), OLED working lining 13 surface is provided with encapsulated layer 14, envelope
Dress layer 14 is fitted with the inner surface of upper and lower substrate (11,12) respectively, and the outer surface of upper and lower substrate (11,12) is equipped with steam resistance
Barrier 15.
In OLED encapsulating structure provided in an embodiment of the present invention, the outer surface due to upper and lower substrate (11,12) is all provided with
There is water vapor barrier layer 15, this water vapor barrier layer 15 can stop that steam, oxygen enter OLED working lining 13, and OLED working lining is risen
Effect to protection.Because water vapor barrier layer is arranged on the outer surface of upper and lower substrate (11,12), making moisture barrier
Destruction to encapsulated layer 14 is avoided, thus it is damaged and occur OLED to lose efficacy to avoid OLED working lining 13 during layer 15
Situation.
Referring to Fig. 2, specifically, in above-described embodiment, water vapor barrier layer 15 can include and upper substrate 11 or infrabasal plate 12
The micrometer structure layer 21 of laminating, micrometer structure layer 21 is provided with array pattern 211, has the micrometer structure layer of array pattern 211
The blocking effect of 21 pairs of steam or oxygen preferably, and, is coated with the nanostructured layers with water-proof function on array pattern 211
22, further improve the anti-steam function of water vapor barrier layer 15 so that the injured probability of OLED working lining 13 reduces, thus
Ensure that the function of OLED did not lost efficacy.
Wherein, array pattern 211 can be concaveconvex structure；Concaveconvex structure can include groove, the longitudinal inner surface of groove
For rectangle or trapezoidal.Array pattern 211 can be obtained by photoetching process, can obtain concavo-convex knot after micrometer structure layer 21 photoetching
Structure, for example, concaveconvex structure can be groove, and the longitudinal inner surface of groove can be rectangle or trapezoidal.It is of course also possible to pass through it
His technique obtains groove, and the longitudinal inner surface of groove can be other figures, such as circular arc.
Preferably, the material of micrometer structure layer 21 can be Polyacrylate materials, polyacrylate material includes bearing
Property polyacrylate organic film material.Polyacrylate materials have good waterproof, performance of steam isolation, with respect to other classes
Type Polyacrylate materials, to prepare the processing step of micrometer structure layer 21 from negativity polyacrylate organic film material
Relatively simple.
As an embodiment, in above-mentioned OLED encapsulating structure, nanostructured layers 22 can be polystyrene
Grain coating or the silica dioxide granule coating through silicic acid anhydride, both grain coatings are respectively provided with good waterproof, vapour proof
Function, and, processing technology is by a relatively simple.
Wherein, upper and lower substrate (11,12) can be flexible polymer material.To be made upper and lower using flexible polymer material
Substrate (11,12) is so that OLED is capable of Flexible Displays.Flexible OLED devices soft it is thus possible to occur shape
Become and be hardly damaged, such that it is able to OLED is arranged on curved surface it might even be possible to dress.Preferably, from PET or
PBT material makes flexible base board.But, the material making flexible base board is not limited to above two material.
The embodiment of the present invention additionally provides a kind of method making above-mentioned OLED encapsulating structure, in described upper and lower base
The outer surface of plate has all made described water vapor barrier layer and has comprised the following steps：
First, make micrometer structure layer from negativity polyacrylate organic film material, then pass through photoetching process or face
Interior typography obtains described array pattern in described micrometer structure layer；
Second, polystyrene emulsion is obtained by the method for in-situ emulsion polymerization, described polystyrene emulsion is coated in
The Surface Creation granules of polystyrene of described array pattern；Or, pass through Plasma-CVD from silicon dioxide
Method by the surface of array pattern described in silica dioxide granule plated film.
Wherein, polystyrene emulsion is obtained by the method for in-situ emulsion polymerization, described polystyrene emulsion is coated in
The Surface Creation granules of polystyrene of described array pattern comprises the following steps：
The mixture of 100 parts of styrene, 6 parts of acrylic acid and 1000 parts of distilled water is added and is furnished with reflux condensing tube, temperature
In meter, the four-neck flask of agitator；It is stirred, stir speed (S.S.) is 300 rpm, logical nitrogen 2 minutes in whipping process；Add 1
Part potassium peroxydisulfate initiator；Then under nitrogen protection, in 70 DEG C of water-baths, reaction obtains polystyrene emulsion in 30 minutes；To react
The described polystyrene emulsion obtaining passes through the method uniform fold of rotary coating on described array pattern, vacuum drying time
30 seconds, vacuum drying temperature was 50 DEG C, and vacuum values are 26Pa；
From silicon dioxide by the method for Plasma-CVD by array described in silica dioxide granule plated film
The surface of figure comprises the following steps：
The cover plate of silicon dioxide and substrate will be coated with through 1.0 wt% silane coupler (γ-methacryloxies third
Base-trimethoxy silane, vinyl trichlorosilane, γ-glycidylpropyl-trimethoxy silane) hexane solution in change
Learn modified 1min and can get super-hydrophobicity interface.
Wherein, hydrophobic treatment step includes：By the hexane solution of 1.0 wt% silane couplers to silicon dioxide chemistry
Modified one minute.
One specific embodiment of present invention offer is described below in detail：Select negativity polyacrylate organic membrane first
Material makes micrometer structure layer, then obtains described array in described micrometer structure layer by typography in photoetching process or face
Figure；One of following two scheme of reselection is to process to described array pattern.
Scheme 1：The mixture of 100 parts of styrene, 6 parts of acrylic acid and 1000 parts of distilled water is added and is furnished with reflux condensation mode
In pipe, thermometer, the four-neck flask of agitator, in whipping process, logical nitrogen 2 minutes, add 1 part of potassium peroxydisulfate initiator, then
React 30 minutes in 70 DEG C of water-baths under nitrogen protection, being kept stirring for speed is 300 rpm, forms polystyrene emulsion, polyphenyl
Vac emulsion passes through the method uniform fold of rotary coating on array pattern, and rotary rpm is 1000rpm, vacuum drying temperature
For 50 DEG C, vacuum values are 26Pa, vacuum drying time 30 seconds.The hydrophobic performance making granules of polystyrene surface greatly enhances,
So that the ability of the anti-steam of flexible base board greatly enhances.
It should be noted that granules of polystyrene can also directly be generated on array pattern 211.Pass through original position emulsion
The method of polymerization is reacted on array pattern 211, generates polystyrene emulsion, thus directly giving birth on the surface of array pattern 211
Become granules of polystyrene.Adopt the step that can reduce rotary coating in this way.
Scheme 2：Silica dioxide granule is obtained by the method for the method plated film of Plasma-CVD, etc.
The canonical parameter of gas ions-chemical vapor deposition is as follows：Using the standby equipment of AKT company system, using silane (SiH4) and laughing gas
(N2O) react under plasmoid, technological temperature is 350 DEG C.Its reaction equation is：SiH4(gaseous state)+2N2O (gaseous state) →
SiO2(solid-state)+2N2(gaseous state)+H2(gaseous state), afterwards, will be even through 1.0 wt% silane for the array pattern being coated with silicon dioxide
Connection agent (γ-methacryloxypropyl-trimethoxy silane, vinyl trichlorosilane, γ-glycidylpropyl-trimethoxy
Base silane) hexane solution in chemical modification can get super-hydrophobicity interface within 1 minute.
The above, the only specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, and any
Those familiar with the art the invention discloses technical scope in, change or replacement can be readily occurred in, all should contain
Cover within protection scope of the present invention.Therefore, protection scope of the present invention should described be defined by scope of the claims.
Claims (8)
1. a kind of OLED encapsulating structure, including upper and lower substrate, is provided with OLED working lining between described upper and lower substrate, described
OLED working lining surface is provided with encapsulated layer, and described encapsulated layer is fitted with the inner surface of described upper and lower substrate respectively, and its feature exists
In the outer surface of described upper and lower substrate is equipped with water vapor barrier layer；Described water vapor barrier layer includes and described upper substrate or lower base
The micrometer structure layer of plate laminating, described micrometer structure layer is provided with the array pattern of concaveconvex structure, and described array pattern covers
There are the nanostructured layers with water-proof function；Described concaveconvex structure includes groove, and the longitudinal inner surface of described groove is rectangle, ladder
Shape or circular arc.
2. OLED encapsulating structure according to claim 1 is it is characterised in that the material of described micrometer structure layer is poly-
Acrylate materials, described polyacrylate material includes negativity polyacrylate organic film material.
3. the OLED encapsulating structure according to any one of claim 1-2 is it is characterised in that described nanostructured layers are
Granules of polystyrene coating or the silica dioxide granule coating through silicic acid anhydride.
4. OLED encapsulating structure according to claim 3 is it is characterised in that described upper and lower substrate is flexible gathering
The flexible base board of compound material.
5. OLED encapsulating structure according to claim 4, the material of described flexible base board is PET or PBT.
6. a kind of method making the OLED encapsulating structure described in any one of the claims 3-5 it is characterised in that
The outer surface of described upper and lower substrate all make with the water vapor barrier layer described in length identical of described upper and lower substrate include following
Step：
First, make micrometer structure layer from negativity polyacrylate organic film material, then print by photoetching process or face
Dataller's skill obtains the array pattern of concaveconvex structure in described micrometer structure layer, and described concaveconvex structure includes groove, described groove
Longitudinal inner surface be rectangle, trapezoidal or circular arc；
Second, polystyrene emulsion is obtained by the method for in-situ emulsion polymerization, described polystyrene emulsion is coated in described
The Surface Creation granules of polystyrene of array pattern；
Or, from silicon dioxide by the method for Plasma-CVD by battle array described in silica dioxide granule plated film
The surface of row figure.
7. the method making OLED encapsulating structure according to claim 6 is it is characterised in that gathered by original position emulsion
The method closed obtains polystyrene emulsion, described polystyrene emulsion is coated in the Surface Creation polyphenyl second of described array pattern
Alkene granule comprises the following steps：
The mixture of 100 parts of styrene, 6 parts of acrylic acid and 1000 parts of distilled water is added and is furnished with reflux condensing tube, thermometer, stirs
Mix in the four-neck flask of device；It is stirred, stir speed (S.S.) is 300 rpm, logical nitrogen 2 minutes in whipping process；Add 1 part of over cure
Sour potassium initiator；Then under nitrogen protection, in 70 DEG C of water-baths, reaction obtains polystyrene emulsion in 30 minutes；Reaction is obtained
Described polystyrene emulsion passes through the method uniform fold of rotary coating on described array pattern, vacuum drying time 30 seconds,
Vacuum drying temperature is 50 DEG C, and vacuum values are 26Pa；
From silicon dioxide by the method for Plasma-CVD by array pattern described in silica dioxide granule plated film
Surface comprise the following steps：
Surpassed being coated with silicon dioxide substrate chemical modification in the hexane solution of 1.0wt% silane coupler within 1 minute
Hydrophobic interface.
8. the method making OLED encapsulating structure according to claim 7 is it is characterised in that silane coupler includes
γ-methacryloxypropyl-trimethoxy silane, vinyl trichlorosilane, γ-glycidylpropyl-trimethoxy silicon
Alkane.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410475529.9A CN104300091B (en) | 2014-09-17 | 2014-09-17 | Oled device packaging structure and manufacturing method thereof |
| PCT/CN2014/092540 WO2016041253A1 (en) | 2014-09-17 | 2014-11-28 | Oled device encapsulation structure and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410475529.9A CN104300091B (en) | 2014-09-17 | 2014-09-17 | Oled device packaging structure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104300091A CN104300091A (en) | 2015-01-21 |
| CN104300091B true CN104300091B (en) | 2017-02-15 |
Family
ID=52319743
Family Applications (1)
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| CN104851844B (en) * | 2015-03-25 | 2018-03-16 | 中山大学 | A kind of waterproof oxygen barrier layer and its preparation method and application |
| CN104851846A (en) * | 2015-03-25 | 2015-08-19 | 中山大学 | Flexible water and oxygen resistant packaging structure and preparation method and application thereof |
| CN105140417A (en) * | 2015-08-20 | 2015-12-09 | 京东方科技集团股份有限公司 | Organic light-emitting diode device, fabrication method and display device |
| CN105047829B (en) * | 2015-09-18 | 2017-05-10 | 京东方科技集团股份有限公司 | Packaging structure and packaging method of organic light emitting device and flexible display device |
| CN105226198A (en) * | 2015-10-13 | 2016-01-06 | 京东方科技集团股份有限公司 | A kind of waterproof transmission increasing flexible OLED devices device and preparation method thereof |
| CN105870356B (en) * | 2016-06-27 | 2017-10-17 | 京东方科技集团股份有限公司 | display device and preparation method thereof |
| CN106486019B (en) * | 2016-10-31 | 2019-06-11 | 昆山工研院新型平板显示技术中心有限公司 | Flexible display apparatus and its manufacturing method |
| CN109980118A (en) * | 2017-12-27 | 2019-07-05 | 宁波长阳科技股份有限公司 | A kind of water vapor rejection film |
| KR102656235B1 (en) * | 2018-08-17 | 2024-04-09 | 엘지디스플레이 주식회사 | Display device having an encapsulating substrate of high thermal conductivity |
| CN109166898A (en) * | 2018-09-04 | 2019-01-08 | 武汉华星光电半导体显示技术有限公司 | A kind of production method of organic light emitting diode display |
| CN110212108B (en) * | 2019-05-17 | 2020-05-19 | 华中科技大学 | Packaging method and product of flexible display |
| CN111129353B (en) | 2020-02-07 | 2021-01-01 | 武汉华星光电半导体显示技术有限公司 | Display device and method of manufacturing the same |
| CN111864083A (en) * | 2020-07-24 | 2020-10-30 | 武汉理工大学 | Packaging method of perovskite solar cell |
| CN113745429B (en) * | 2021-08-26 | 2024-04-30 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN115273670A (en) * | 2022-08-18 | 2022-11-01 | 武汉天马微电子有限公司 | Folding display screen |
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