CN104254046A - MEMS microphone with low pressure region between diaphragm and counter electrode - Google Patents

MEMS microphone with low pressure region between diaphragm and counter electrode Download PDF

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Publication number
CN104254046A
CN104254046A CN201410289575.XA CN201410289575A CN104254046A CN 104254046 A CN104254046 A CN 104254046A CN 201410289575 A CN201410289575 A CN 201410289575A CN 104254046 A CN104254046 A CN 104254046A
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mems microphone
membrane parts
low
pressure
pressure area
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CN201410289575.XA
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CN104254046B (en
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A·德厄
A·弗勒梅尔
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Infineon Technologies AG
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Infineon Technologies AG
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0078—Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
    • H04R7/04—Plane diaphragms
    • H04R7/06—Plane diaphragms comprising a plurality of sections or layers
    • H04R7/08—Plane diaphragms comprising a plurality of sections or layers comprising superposed layers separated by air or other fluid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2410/00—Microphones
    • H04R2410/03—Reduction of intrinsic noise in microphones

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Multimedia (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)

Abstract

A MEMS microphone includes a first diaphragm element, a counter electrode element, and a low pressure region between the first diaphragm element and the counter electrode element. The low pressure region has a pressure less than an ambient pressure.

Description

Have in vibrating diaphragm and the MEMS microphone to the low-pressure area between electrode
Technical field
Embodiments of the present invention relate to microelectromechanical systems (MEMS) microphone.Some execution modes relate to the method for the manufacture of MEMS microphone.Some execution modes relate to MEMS sound transducer.Some execution modes relate to (closely) vacuum microphone and/or (closely) vacuum loud speaker.
Background technology
When designing transducer such as pressure sensor, acceleration transducer, microphone or loud speaker, it may be usually desirable for realizing high s/n ratio (SNR).The continuous microminiaturization of transducer proposes the new challenge about the high s/n ratio expected.Nowadays the microphone (and also comprising loud speaker at some category) that may be used in such as mobile phone and similar devices can be implemented as silicon microphone or microelectromechanical systems.In order to competitive and provide the performance of expection, silicon microphone may need high SNR.But for Electret Condencer Microphone, SNR may be limited to the structure of Electret Condencer Microphone usually.
Utilize current Electret Condencer Microphone design particularly when being embodied as MEMS, the problem of the limited SNR that can obtain can be explained as follows.The backboard that Electret Condencer Microphone generally includes vibrating diaphragm and can serve as electrode.Sound may need through backboard, and therefore backboard may be perforated usually.Notice, even if backboard may to be arranged in after vibrating diaphragm (such as wherein, deviate from vibrating diaphragm the side in direction that sound arrives) design in, backboard also may need perforation, this is because in the course of the work vibrating diaphragm may via the backboard after punching by some air pressures in the volume between vibrating diaphragm and backboard to the cavity of dorsal part.When not having the hole in dorsal part cavity and backboard, the volume between vibrating diaphragm and backboard may action as stiffness spring, and vibrating diaphragm thus may be avoided to vibrate significantly in response to the sound arrived.
A kind of different designs of Electret Condencer Microphone can use usually said pectination to drive, wherein vibrating diaphragm and have multiple interdigitated comb in the side week of vibrating diaphragm to electrode.These Comb transducer microphones can have reduction due to the noise that causes of disappearance backboard.But, between interdigital comb, still may there is noisy fluid element.
Summary of the invention
The present invention can provide a kind of MEMS microphone.This MEMS microphone can comprise the first membrane parts, to electrode member and at the first membrane parts and to the low-pressure area between electrode member.Low-pressure area can have the pressure less than environmental stress.
The present invention can provide a kind of method manufacturing MEMS microphone.The method can comprise, the first membrane parts and to electrode member between create low-pressure area.The method may further include, and stops material to enter low-pressure area enduringly, to maintain the low pressure of regulation in low-pressure area on average enduringly.
Accompanying drawing explanation
Here embodiments of the present invention are described with reference to the drawings.
Fig. 1 shows the schematic cross-section of the MEMS microphone comprising low-pressure area and single membrane parts;
Fig. 2 shows the schematic cross-section of MEMS microphone, MEMS loud speaker or the MEMS sound transducer comprising the first vibrating diaphragm and the second vibrating diaphragm surrounding low-pressure area;
Fig. 3 A and Fig. 3 B shows the schematic cross-section in the process of the operation of MEMS microphone when being exposed under sound of Fig. 2;
Fig. 4 shows the schematic cross-section of Fig. 2, and additionally illustrates the schematic circuit diagram of power supply and the sensing circuit illustrated for MEMS microphone;
Fig. 5 A and Fig. 5 B shows the schematic cross-section of MEMS microphone in the first sectional position;
Fig. 6 A and Fig. 6 B shows the schematic cross-section of identical MEMS microphone in another sectional position;
Fig. 7 A and Fig. 7 B shows the schematic cross-section of identical MEMS microphone in another sectional position;
Fig. 8 A and Fig. 8 B shows the schematic cross-section of identical MEMS microphone in another sectional position;
Fig. 9 A and Fig. 9 B shows the schematic cross-section of identical MEMS microphone in another sectional position;
Figure 10 shows the partial perspective cross-section schematic diagram of MEMS microphone;
Figure 11 shows the partial perspective cross-section schematic diagram similar with Figure 10, to illustrate some details of MEMS microphone better;
Figure 12 shows MEMS microphone and atmospheric pressure to the schematic cross-section of the impact of the first and second membrane parts;
Figure 13 illustrates the size marking of the vibrating diaphragm segmentation in the region crossed between plural pillar;
Figure 14 schematically illustrate under atmospheric pressure, as the thickness of vibrating diaphragm segmentation and the function of the length of side, the bending amount of the central authorities of vibrating diaphragm fragment in fig. 13;
Figure 15 shows the schematic cross-section of the MEMS microphone with antiseized projection;
Figure 16 A and Figure 16 B shows the schematic cross-section of the MEMS microphone to electrode had through horizontal partition;
Figure 17 A and Figure 17 B shows the schematic cross-section of the MEMS microphone comprising the membrane parts served as the hinge of the first and second membrane parts or the softer of suspension;
Figure 17 C shows the partial perspective generalized section of the MEMS microphone in Figure 17 A and Figure 17 B;
Figure 18 A shows and comprises the horizontal cross-section schematic diagram of X-shaped to the MEMS microphone of electrode;
Figure 18 B and Figure 18 C shows the schematic cross-section of the MEMS microphone from Figure 18 A;
Figure 19 illustrates that comprise can for the schematic cross-section of the single MEMS microphone to electrode and the first and second membrane parts electrically isolated from one;
Figure 20 A to Figure 20 O schematically illustrates the technological process of the method for the manufacture of MEMS microphone.
Same or equivalent element or the element with same or equivalent function are indicated by equal or suitable Reference numeral in the following description.
Specific embodiment
In the following description, multiple details is set forth to provide the more thorough explanation to embodiments of the present invention.But will be apparent to those skilled in the art, when not having these concrete details, embodiment of the present invention also can be put into practice.In other instances, known structure and device illustrate to avoid making embodiments of the present invention fuzzy in block diagram form instead of in detail.In addition, below the feature of described different execution modes can be bonded to each other, unless otherwise.
The parallel plate capacitor that standard electric capacitance-type microphone uses the distance with the gap caused by film displacement to change.This may imply the noise of the air via bore flow.When studying the signal to noise ratio problem of current microphone, perforation backboard can be confirmed as one of main noise contributor.Possible solution may be remove a perforation backboard, but this may need new sensor concept.The experiment undertaken by the present inventor and simulation disclose, and signal to noise ratio can be improved 4 to 27dB (dB sound pressure level) by the removal of perforation backboard in theory.For having 40mm 3the larger microphone of dischargeable capacity, deposits signal to noise ratio in case at perforation backboard and may be about 71dB (A).After removal perforation backboard, signal to noise ratio can be increased to 98dB (A).For having 2.3mm 3the less microphone of dischargeable capacity, improvement may not be so obvious, but still have 4dB, namely from the 69dB (A) deposited at perforation backboard in case to the 73dB (A) after removing perforate substrates.
Noise in sound system may come from the viscous flow of the air in fine structure, and may cause damping and dissipation loss.For Electret Condencer Microphone concept, aspects more described herein can be instructed and how under the vacuum or low pressure atmosphere of moveable diaphragm or vibrating diaphragm inside, be encapsulated Static reference electrode (to electrode).Other aspects disclosed herein how can instruct and under what conditions can single membrane parts and to electrode member between form low-pressure area.
Fig. 1 schematically illustrates a concept for MEMS microphone, and wherein low-pressure area 132 can be arranged on membrane parts 112 and between electrode member 122.Fig. 1 schematically shows a possible execution mode as an example.In order to consistent with described further part, membrane parts 112 also can be called as " the first membrane parts ".Membrane parts 112 can under its side be exposed to environmental stress and potential acoustic pressure.This side of membrane parts 112 also can be called as the acoustic reception first type surface of membrane parts 112.At its another first type surface, membrane parts 112 can adjoin low-pressure area 132.Membrane parts 112 may be implemented as film or membrane component.Membrane parts 112 in response to the displacement of acoustic pressure schematically can be illustrated in FIG by chain-dotted line (notice, in order to illustration purpose, this displacement may some be illustrated large).
Low-pressure area 132 schematically can be illustrated in FIG by dotted line.Low-pressure area 132 has possibility and is usually less than environmental stress or standard atmospheric pressure.Low-pressure area 132 can adjoin with membrane parts 112 and usually directly contact, and also with to electrode member 122 adjoins and usually directly contact.
Membrane parts 112 can be biased by the pressure difference between the pressure in environmental stress and low-pressure area 132, and the pressure in this low-pressure area 132 usually may lower than environmental stress.Therefore, when not having sound to arrive membrane parts 112, membrane parts 112 can present corresponding resting position or configuration.According to the density in low pressure or region of no pressure, lower pressure can cause more weak damping.Meanwhile, the film bearing normal pressure and sensing sound can without any need for back cavity volume, because may there is very little power or not have power to transfer to the second electrode via fluid coupling.Providing some numerals is example, and film may must bear the absolute pressure up to about 100kPa.Such as can up to about 1MPa or up in the scope of 10MPa by the acoustic pressure of sensing.
According at least one execution mode, the pressure of low-pressure area can be essentially vacuum or nearly vacuum.In other examples of implementation, the pressure in low-pressure area can be less than environmental stress or the standard atmospheric pressure of about 50%.Also possibility, the pressure in low-pressure area can be less than environmental stress or the standard atmospheric pressure (standard atmospheric pressure can be 101.325kPa or 1013.25mbar usually) of about 45%, 40%, 35%, 30%, 25% or 20%.Pressure in low-pressure area also can be expressed as absolute pressure, such as, be less than 50kPa, is less than 40kPa, is less than 30kPa, or is less than 25kPa.Under arbitrary situation, the pressure of low-pressure area can be chosen for it usually can lower than the typical range of environmental stress, this typical range be used for MEMS microphone may should by the meteorological condition of rational expectation and the height (such as, up on height above sea level 9000 meters) relative to height above sea level.
First membrane parts can have the vibrating diaphragm compliance at least about 1nm/Pa.According to optional implementation, vibrating diaphragm compliance may be at least about 2nm/Pa, is at least about 3nm/Pa, is at least about 4nm/Pa, or is at least about 5nm/Pa.Vibrating diaphragm compliance can be understood as the inverse of vibrating diaphragm rigidity usually.But as used herein, vibrating diaphragm compliance can be normalized to the size of vibrating diaphragm, and the peak excursion of vibrating diaphragm when bearing specific acoustic pressure (being 1 Pascal (Pa)) here can be shown.Usually the reference sound pressure in air used can be P ref=20 μ Pa (rms), its approximate threshold value being equivalent to human auditory.Under this reference sound pressure, the sound pressure level (SPL) of 94dB can cause the acoustic pressure of 1Pa (drilling hammer by contrast, at 1 meter of can have the sound pressure level of about 100dB).
Fig. 2 shows the schematic cross-section through a kind of MEMS microphone, this MEMS microphone may further include be arranged in electrode member 222 about the second membrane parts 214 on the opposite side of the first membrane parts 212.Fig. 2 illustrates another possible execution mode.MEMS microphone can be included in the multiple pillar or supporter 272 that extend between the first membrane parts 212 and the second vibrating diaphragm 214.Pillar 272 does not usually contact or touches electrode member 222, but can pass electrode member 222 via to the opening in electrode member 222 or hole 227.In the example of realization illustrated in fig. 2, pillar 272 may be integrally formed with the first membrane parts 212 and the second membrane parts 214.Therefore, the first membrane parts 212, second membrane parts 214 and pillar 272 can form the overall structure of same material such as polysilicon.But this does not also mean that the first membrane parts 212, second membrane parts 214 and pillar 272 need to be formed in the manufacture process of MEMS microphone simultaneously.Contrary possibly, in first time deposition process, first the second membrane parts 214 can be formed on the surface (or surface of auxiliary layer (such as etch stop layer)) of substrate 202.In second time deposition process and may in third time deposition process, pillar 272 can be formed subsequently and also have the first membrane parts 212 finally to be formed.Following will describe optionally realize in example, pillar 272 can be made up of the material being different from the first and second membrane parts 212,214.First membrane parts 212 can have can towards the first type surface of sound arrival direction (schematically being illustrated by arrow) in fig. 2.
As an example in fig. 2 with in sectional view schematically illustrated MEMS microphone, except pair of electrode elements 222, second pair of electrode member 224 can also be set.Second pair of electrode member 224 can separate with pair of electrode elements 222.To electrode isolation layers 252 can make pair of electrode elements 222 and second pair of electrode member 224 electrically isolated from one.In the example of schematically illustrated MEMS microphone in fig. 2, pair of electrode elements 222, second pair of electrode member 224 and to electrode isolation layers 252 can be formed can its outer rim or around by supporting construction support to electrode assembly or to electrode structure.Notice, although Fig. 2 describe " floating " state is manifested in low-pressure area 232 to three middle bodies of electrode assembly, they usually can above the plotting planes of Fig. 2 and/or attached underneath to around electrode assembly, shown in dotted line.
In the example of indicative icon in fig. 2, supporting construction can have stacking construction, and the first membrane parts 212, second membrane parts 214 and can contacting with plane earth on one or two in their first type surfaces of supporting construction the periphery of electrode assembly 222,224,252.Supporting construction itself can be arranged in the first type surface place of substrate 202.On this first type surface of substrate 202, each layer can be arranged in top of each other in the following order, such as: the second membrane parts 214, second vibrating diaphragm separator 244, second pair of electrode member 224, to electrode isolation layers 252, pair of electrode elements 222, first vibrating diaphragm separator 242 and the first membrane parts 212.Dorsal part cavity 298 can be formed in substrate 202 to allow the second membrane parts 214 to vibrate in response to sound wave.
When studying the pressure condition of this structure, the diaphragm structure comprising the first membrane parts 212, pillar 272 and the second membrane parts 214 can be observed and enough rigidity can cross pressure to bearing the 1bar of outside atmosphere to vacuum chamber or low-pressure cavity.Especially, pillar 272 can be considered as extending through to the hole 227 of electrode assembly with the vertical ridge of rock-steady structure (being also called " stator ").Diaphragm means 212,214 can closely seal.
Fig. 2 illustrates, such as, when not having the sound wave that can cause membrane parts 212,214 that skew occurs to arrive membrane parts 212,214, is in the MEMS microphone of its resting position.In the side that the sound of the first membrane parts 212 can arrive, total pressure can be expressed as p (t)=normal pressure+p sound(t).In dorsal part cavity 298, only may there is normal atmosphere pressure, i.e. p 0=normal pressure.Pressure in low-pressure area 232 can be relatively low, such as p gap~ 0 or < environmental stress 50%.
Fig. 3 A and Fig. 3 B illustrates by when a kind of possible MEMS microphone is exposed under sound as possible example and/or execution mode, by the schematic cross-section of this MEMS microphone.Fig. 3 A illustrates such situation, and wherein diaphragm means 212,214,272 can be crossed the effect of pressure due to audiogenic, relative compared with the reference pressure in dorsal part cavity 298 of the upside adjacent with the first membrane parts 212 and be pushed down, that is,
P (t)=normal pressure+| p sound|.
In figure 3b, the pressure in acoustic reception side can, lower than the pressure in dorsal part cavity 298, make diaphragm means 212,214,272 upwards to offset.Therefore, when there being sound, diaphragm structure or membrane structure move up and down relative to electrode structure 222,224,252 (stator).Insufficient pressure in figure 3b can be expressed as
P (t)=normal pressure-| p sound|.
Fig. 4 schematically illustrates the example how MEMS microphone can be electrically connected to power supply circuits and amplifier.Fig. 4 illustrates an example of possible connection.Other layouts are also possible.In Fig. 4, the first and second membrane parts 212,214 can connect 412 by vibrating diaphragm and be grounded to earthing potential or reference potential.Pair of electrode elements 222 can be electrically connected to the first power supply circuits by first pair of Electrode connection 422 and also be connected to the first input of amplifier 401.First power supply circuits comprise voltage source 402 and resistor 406.Resistor 406 can have several giga-ohm even draws very much ohm very high resistance up to 1.Amplifier 401 can be differential amplifier.Second pair of electrode member 224 can be connected to the second input of the second power supply circuits and amplifier 401 by second pair of Electrode connection 424.Second power supply circuits comprise the second voltage source 404 and usually have the resistor 408 of the resistance approximately identical with resistor 406.First and second power supply circuits make first and second pairs of electrode members 222,224 relative to reference potential (earthing potential) electrical bias respectively.When diaphragm structure can offset in response to the sound arrived, first and second, the electromotive force of electrode 222,224 due to the impact of electric capacity changed between diaphragm structure and first and second is on electrode member, and can be changed in the opposite direction.This is schematically illustrated by first waveform 432 and the second waveform 434 that can be fed to the first and second inputs in amplifier 401 respectively in the diagram.Amplifier 401 can produce the output signal 430 of amplifying based on input signal 432,434 (particularly the difference of input signal 432,434).Then the output signal 430 of amplification is supplied to the other parts for follow-up signal process (such as analog-to-digital conversion, filtering etc.).
The possible implementation of the low-pressure area that has between two membrane parts and the MEMS microphone to electrode in this low-pressure area will be described now about Fig. 5 A to Figure 10.Fig. 5 A to Figure 10 shows the example of possible execution mode and/or possible implementation.Fig. 5 A, 6A, 7A, 8A can be substantially identical with 9A, and represent the position of the horizontal cross-section of the correspondence shown in Fig. 5 B, 6B, 7B, 8B and 9B respectively.In Fig. 5 A to Figure 10, the example of indicative icon can relate to a kind of transverse design comprised for the ventilation hole 515 making the static pressure between ambient air with dorsal part cavity 298 balanced.
Fig. 6 A represents, can implement next horizontal cross-section according to through the cross section of the second membrane parts 214, in fig. 6b this horizontal cross-section of graphical representation of exemplary.In this position, ventilation hole 515 can have square cross section.
Fig. 7 A shows another schematic cross-section of MEMS microphone, and Fig. 7 B shows corresponding schematic horizontal cross section, may implement this horizontal cross-section on the height of the second vibrating diaphragm separator 244.In the example of described MEMS microphone, second vibrating diaphragm separator 244 may not be provided in only the electric isolution between the second membrane parts 214 and second pair of electrode member 224, also can serve as second pair of electrode member 224 and the support of other structures that can be arranged in second pair of electrode member 224 top.Therefore, the second vibrating diaphragm separator 244 also can be regarded as a part for supporting construction.Second vibrating diaphragm separator 244 can also retrain or limit low-pressure area 232 in the horizontal.Also pillar 272 can be seen in Fig. 7 A and 7B.In the mode similar with pillar 272, passage 715 can be formed by four sidewalls extended between the first membrane parts 212 and the second membrane parts 214.In described example, passage 715 can have square cross section, but also can have other cross sectional shapes.Passage 715 can for ventilation hole 515 sealing low pressure district 232.
Can find out in figure 7b, each pillar 272 can have elongated cross section (particularly the cross section of rectangle).But other cross sectional shapes are also fine.Therefore, each pillar 272 can be wider than thick significantly, such as, than thick wider three times to six times between.The width of pillar can schematically be illustrated as " w " in figure 7b, and the thickness of pillar 272 can schematically be illustrated as " t " in figure 7b.Can the first subset of oriented columns 272, the width w in their cross section is extended along first direction.Can the second subset of differently oriented columns 272, the width w in their cross section is extended along the second direction that can be not parallel to first direction.In figure 7b schematically in illustrated example, the second direction of the cross section orientation of the second subset of pillar 272 can be orthogonal to the first direction of the cross section orientation in the first subset describing pillar 272.In alternative embodiments, multiple pillar 272 can be subdivided into three or even more subset of pillar, and each subset has the direction of different cross section orientations.Pillar 272 has different cross section orientations to realize, for the pressure be excessively applied to by air on the first and second membrane parts 212,214, and substantially isotropic rigidity of whole membrane parts.In addition, by spaced at least some pillar 272, can think and enough spaces are stayed to electrode assembly 222,224,252, as seen in the fig. 8b.
Fig. 8 B shows the horizontal cross-section at the height to electrode isolation layers 252.In the illustrated case, also can represent the geometry of first and second pairs of electrode members 222,224 to the geometry of electrode isolation layers 252, and thus represent and comprise pair of electrodes 222, whole to electrode assembly to three layers of electrode isolation layers 252 and second pair of electrode member 224.Hole 227 can be comprised to electrode isolation layers 252.Pillar 272 can when the edge of not contact hole 227 (that is, have enough with gap) through hole 227.Therefore, when diaphragm means can be made to offset up or down, diaphragm means can move up and down relative to electrode assembly, and this mainly may occur in its middle body when being exposed under sound wave electrode assembly.In addition, can prevent pillar 272 and pair of electrodes 222 and/or second pair of electrode 224 from producing electrical contact to the hole 227 in electrode assembly, this electrical contact will diaphragm means and to electrode assembly between cause short circuit.
In order to the mechanical stability providing some extra to diaphragm means, the sidewall of the passage 715 in Fig. 8 can thicker than in the horizontal cross-section of Fig. 7 B.Ventilation hole 515 can have circular cross section in shown position in the fig. 8b.
Fig. 9 B shows and horizontal cross-section like Fig. 8 category-B, so the difference in cross section is implemented at the height in pair of electrode elements 222.
Figure 10 shows the schematic perspective cross-sectional view of MEMS microphone.Figure 11 shows similar schematic perspective cross-sectional view, wherein can be shown specifically further the relation of electrode assembly and pillar 272.Especially, Figure 11 can show, and how one in pillar 272 is can through being formed in the hole 227 in electrode assembly.
Figure 12 shows a kind of schematic cross-section of MEMS microphone, and wherein the bending of vibrating diaphragm portion can be illustrated schematically.Due to the effect of the vacuum between first and second membrane parts 212,214 or low pressure, suspension vibrating diaphragm parts can carry the environmental stress causing bending.Due to the effect of the pillar 272 between first and second membrane parts 212,214 usually can be arranged in regularly, bends and can be reduced to relatively little amount.
Figure 13 schematically illustrates a suspension vibrating diaphragm parts (membrane element).The lateral dimension " l " of suspension vibrating diaphragm parts, its thickness t vibrating diaphragm, and its internal stress can limit bending amount.As an example, the blockage that Figure 14 chart illustrates unstressed polysilicon vibrating diaphragm under 1bar pressure (atmospheric pressure), for different-thickness and length of side, the bending result of calculation.For typical size (length of side=20 μm, thickness=0.5 μm), bending can be about 140nm, and be acceptable for the air gap of 2 μm.Tensile stress in vibrating diaphragm layer can reduce bending extraly.
Figure 15 show according to may have between first and second membrane parts 212,214 a kind of possible execution mode of low-pressure area 232, the schematic cross-section of MEMS microphone.According to the example of the implementation of indicative icon in fig .15, the first membrane parts 212 can comprise can be arranged in the first membrane parts 212 can towards the antiseized projection 1512 of the surface of low-pressure area 232.Antiseized projection 1512 can reduce the first membrane parts 212 is attached to pair of electrode elements 222 risk due to the effect of adhesion.In a similar fashion, the second pair of electrode member 224 can comprise the multiple second antiseized projections 1524 towards the second membrane parts 214.Antiseized projection 1512 can be integrated with the first membrane parts 212.Antiseized projection 1524 can be integrated as a part and second pair of electrode member 224.
Figure 16 A shows a kind of schematic cross-section with MEMS microphone for the horizontal partition to electrode.Figure 16 B shows the schematic horizontal sectional view of MEMS microphone of the same race.In this embodiment, pair of electrode elements 222 does not extend in supporting construction, except the little bow strip for pair of electrode elements 222 being electrically connected with external circuitry (such as power supply circuits and reading circuit).Pair of electrode elements 222 can by gap 1623 laterally restriction, and this gap 1623 can by the region electric isolution to electrode material 1622 of pair of electrode elements 222 with surrounding.Pair of electrode elements 222 can be restricted to the middle section of MEMS microphone.First membrane parts 212 and the second membrane parts 214 can stand skew larger in the ratio edge region caused due to the effect of acoustic wave excitation in central area.In edge region (namely in supporting construction and near supporting construction), the first and second membrane parts 212,214 may not move in response to sound wave usually significantly.Therefore, fringe region may not contribute to the change of electric capacity.Horizontal partition for first and second pairs of electrode members 222,224 can cause the capacitance variations of the larger ratio in response to sound wave usually, and thus obtains higher MEMS microphone sensitivity.Gap 1623 through supporting zone time, the material of the first vibrating diaphragm separator 242 can be filled with, so as external ambient atmosphere sealing low pressure district 232.The second vibrating diaphragm separator 244 same process can be carried out, because may be used for the gap between packing elements 224 and element 1624 to the gap between second pair of electrode member 224 and corresponding skirt materials 1624.In optional mode, gap 1623 and the gap around second pair of electrode member 224 can be filled with special isolated material or be substituted by special isolated material.
Figure 17 A shows a kind of schematic cross-section of MEMS microphone, as how can introduce softer vibrating diaphragm or film and this softer vibrating diaphragm or film can for the low pressure of (namely between the first and second membrane parts 212,214) in low-pressure area be still rigidity an example.Figure 17 B shows corresponding horizontal cross-section.MEMS microphone can comprise hinge components or the 3rd membrane parts 1716.Hinge components or the 3rd membrane parts 1760 can be coupling between the first membrane parts 212 and supporting construction 1706.Hinge components/the 3rd membrane parts 1716 can have rigidity that can be less than the rigidity of the first membrane parts 212 and/or less than the rigidity of the second membrane parts 214.3rd membrane parts 1716 can comprise the wall elements 1717 being configured to lateral confinement low-pressure area 232.Wall elements 1717 can be coupled to supporting construction 1706, and supporting construction 1706 can be participated in constraint low-pressure area 232.Shown in Figure 17 A and 17B, schematically illustrated MEMS microphone can comprise four hinge components/the 3rd membrane parts 1716.Pair of electrode elements 222 can be coupled to supporting construction 1706 independent of hinge components 1716 ground.This can by arranging at least one gap to realize in hinge components 1716, and pair of electrode elements 222 can to extend to the supporting construction 1706 Figure 17 B from low-pressure area 232 by this at least one gap.This can for electrode isolation layers 252 indicative icon.The structure of pair of electrode elements 222 and second pair of electrode member 224 can with substantially similar to the structure of electrode isolation layers 252.In the structure shown in Figure 17 A and 17B, may be provided with four gaps between four hinge components 1716, four gaps are arranged on such as in four the square bights formed by four hinge components 1716.
Figure 17 C shows the perspective section schematic diagram of two hinge components in the first and second membrane parts 212,214 and hinge components 1716.For clarity sake, eliminate to electrode member 222,224 and to electrode isolation layers 252 from the diagram of Figure 17 C.Can find out, each hinge components 1716 can be formed have the end each other to two grooves that base fabric is put, the structure that can be described as " double flute (double-trough) ".In bight, two hinge components 1716 need not contact with each other, and can be retained in the space between hinge components 1716, and this space can allow electrode structure independent of diaphragm structure ground mechanical bond and be electrically coupled to supporting construction.In the example of this implementation, hinge components 1716 can have the cross section of H-shaped.In optional implementation, one or more hinge components 1716 can have such as U-shaped cross section or another kind of cross section, and wherein such as the second membrane parts 214 can form the following of " U " continuously, and the first membrane parts 212 can be interrupted by wall elements 1717.Dotted line in Figure 17 C schematically illustrates some Internal periphery of low-pressure area 232.
Figure 18 A to Figure 18 C schematically illustrates another possible implementation of MEMS microphone, wherein can have the structure of roughly X-shaped to electrode member.That Figure 18 A can show pair of electrode elements 1822 and hinge components or the 3rd membrane parts 1816 schematic top figure.For clarity sake, from diagram, some elements are eliminated, such as, in Figure 17 A to Figure 17 C wall elements 1717.Can find out, by four arms that can extend in the mode of X-shaped from the central portion of pair of electrode elements 222, and pair of electrode elements 222 can be hung at supporting construction 1706 place.As an optional implementation, the arm of an arm, two arms, three arms or any other quantity can be passed through, and support pair of electrode elements 1822 at supporting construction place.
Figure 18 B shows the schematic cross-section of the MEMS microphone by Figure 18 A, and Figure 18 C shows the horizontal cross-section of the correspondence by MEMS microphone.Can find out in Figure 18 C, the sectional view of Figure 18 B can be implemented with angled plane taken, make the left part in Figure 18 B that cross section by hinge components 1816 is shown, and the right part of Figure 18 B illustrate by the schematic cross-section to electrode isolation layers 1852.Hinge components or the 3rd membrane parts 1816 can comprise promotion hinge components 1816 bending wave molding 1818 in this region.The rotation bending the axle that can be described as around the extended line being parallel to wave molding 1818 of each hinge components 1816.The wall elements 1817 of hinge components 1816 can participate in and retrain in low-pressure area 232 for ambient air.For this reason, wall elements 1817 can be coupled to supporting construction 1706.In the example shown in Figure 18 A to Figure 18 C, wall elements 1817 can comprise can with certain angle start from supporting construction 1706 the first wall portion, supporting construction 1706 can be basically parallel to and the second wall portion of extending and the 3rd wall portion that can merge with certain angle and supporting construction 1706.By this way, wall elements 1817 can form three trapezoidal limits that the remainder surrounding hinge components 1816 particularly comprises the part of wave molding 1818.The 4th trapezoidal limit can be formed by supporting construction.Other steam vent 1815 can be formed in more than one hinge components 1816.Ventilation hole 1815 can be configured to be convenient to make the static pressure between environmental stress with dorsal part cavity 298 balanced.As described above, in centre strut 715, other ventilation hole 515 can also be had.
Figure 19 shows another example of the possible implementation of MEMS microphone, and wherein namely stator can be implemented as single electrode to electrode assembly, and movable diaphragm structure comprises for electrically isolated from one two electrodes.MEMS microphone can comprise the first membrane parts 1912 and the second membrane parts 1914.First membrane parts 1912 can be mechanically coupled to the second membrane parts 1914 via multiple electric isolution pillar 1972.The single to electrode member 1922 of electric conducting material can be comprised to electrode assembly.Also can arrange can for electrically isolated from one two to electrode and also can for electrically isolated from one two extra vibrating diaphragms (namely for four of MEMS microphone different electrodes).
Figure 20 A to Figure 20 O shows in the different phase or step of one of the manufacturing process for MEMS microphone as described above possible example, through the schematic cross-section of a part for wafer.Any size, the one-tenth-value thickness 1/10 of different layers, Material selec-tion etc. are all example, and thus can change.
It can be that wherein silicon can with the substrate 202 of the silicon wafer of mono-crystalline structures layout that Figure 20 A shows.Can deposited lower etch stop layer 203 at the top major surface place of backboard 202.Lower etch stop layer 203 can guarantee to appear in subsequent manufacturing procedures for the formation of cavity 298 the reliable stopping of etch process.Lower etch stop layer 203 can be made up of such as oxide, thermal oxide or TEOS usually.Its thickness can between 0.1 to 1 μm.
Figure 20 B shows at the schematic cross-section for the wafer after lower etch stop layer 203 place deposited the layer of the second membrane parts 214.In addition, the second membrane parts 214 structure can also have been defined in Figure 20 B.This material can be doped silicon polymer (poly-silicone), and it can be the doped polysilicon layer of deposit as a part for the motor of MEMS microphone.The thickness of layer 214 usually can between 0.5 to 2 μm.
Figure 20 C shows the schematic cross-section by wafer after the structure place shown in Figure 20 B deposited for the layer of the sacrifical oxide 2044 in lower gap.Sacrifical oxide can be the material substantially identical with the material for lower etch stop layer 203.The thickness at the top at the second membrane parts 214 of the second vibrating diaphragm oxide layer 2044 of deposit between about 0.5 to 2 μm, can depend on the gap width for MEMS microphone of expectation usually.
Figure 20 D shows the schematic cross-section that to deposited on the sacrifical oxide 2044 that previous deposition is good after each layer of multi-layer stator.In described example, multi-layer stator can comprise three layers: layer 2024, for forming second pair of electrode member 224 subsequently; The layer 2052 of electrical insulating material, for what formed electrode isolation layers 252 subsequently; And layer 2022, for forming pair of electrode elements 222 subsequently.Layer 2024 and layer 2022 can be doped polycrystalline silicon, or comprise doped polycrystalline silicon.Layer 2052 can comprise silicon nitride SiN.Other materials is also fine, such as monocrystalline silicon (body silicon; Or silicon-on-insulator, SOI), polysilicon, metal (such as aluminium or AlSiCu).Dielectric layer can comprise oxide, Si 3n 4, Si xn yo, polyimides etc.The thickness of each layer of multi-layer stator is passable, such as, for the layer of first and second pairs of electrode members 2022,2024, between about 0.1 to 1 μm, and for the layer to electrode isolation layers 2052, between about 0.1 to 0.5 μm.
Figure 20 E shows after can defining the multi-layer stator structure comprising three layers 2024,2052 and 2022, particularly can define the schematic cross-section after opening 2027 or groove in multi-layer stator, such as described opening 2027 can extend to the second vibrating diaphragm separator 2044.
Then can pass through depositing technics (such as, there is the TEOS deposition structure 2042 of the thickness between about 0.5 to 5 μm) and fill opening 2027.When the second vibrating diaphragm separator 2044 can for be same material with deposition materials, these two layers can merge, and can form a structure.Schematic cross-section after TEOS deposit can as shown in Figure 20 F.Other deposition materials are also fine.
Figure 20 G show can the second vibrating diaphragm separator 2042 place deposited mask 2045 and made mask 2045 define structure after schematic cross-section.Then, can perform usually said interval body etch process (pillar etch technique), its result can be seen in Figure 20 H.Especially, can make hole 2027 being deeply extended relative to them, make them can arrive the second membrane parts 214 downwards now.
In Figure 20 I, can eliminate mask 2045.Hole 2027 can limit the shape of pillar 272 in the future now.In subsequent steps, further deposit doped polycrystalline silicon 2012 can be performed, this deposit filler opening 2027 (Figure 20 J).The thickness of the doped polycrystalline silicon of deposit can such as between about 0.5 to 2 μm.
Subsequently, the doped polycrystalline silicon 2012 of deposit can be constructed.By constructing the first vibrating diaphragm layer 2012, multiple aperture 2011 can be created in the first vibrating diaphragm layer 2012.Each hole can have the diameter such as between about 0.1 to 1 μm.Aperture 2011 can be used as etch-hole subsequently, and then makes aperture 2011 again close.Figure 20 J show deposited the first vibrating diaphragm layer 2012 and make the first vibrating diaphragm layer 2012 form structure after schematic cross-section.While the little etch-hole 2011 of formation, can by forming the horizontal partition that the gap 2021 that the first membrane parts 212 is separated with the part of the surrounding of the first diaphragm materials 2012 can be performed the first vibrating diaphragm layer 2012, this separation can complete subsequently.The part of the surrounding of the first diaphragm materials can be used to electrical contact pair of electrode elements 222, second pair of electrode member 224 and/or the second membrane parts 214 subsequently.
Figure 20 K show horizontal partition 2021 can the temporary transient side by means of mask 2046 be capped after schematic cross-section.Utilize also not by the remaining aperture 2011 that mask covers, perform release etch to remove the oxide between the second vibrating diaphragm layer 214 and the first vibrating diaphragm layer 2012.Release etch technique can be subject to time controling, the marginal portion of expendable material 2042 and 2044 can not be etched away by etchant, because, the distance in nearest hole 2011 can ether large, make etchant can not arrive this marginal portion during release etch technique continues.Substituting the etch process by time controling, also can using other forms stopped for arranging etching.
Figure 20 L shows the schematic cross-section eliminated after mask 2046.Can perform etch-hole to close in Figure 20 M, to use suitable encapsulant 2019 to close to make aperture 2011, this can be schematically shown by thick line in Figure 20 M and Figure 20 N and 20O subsequently.This closed step can perform, to obtain low-pressure area 232 under low pressure atmosphere or (closely) vacuum.This etch-hole closes more than of can comprise in following activity:
Under low pressure, the non-conformal deposit of oxide is utilized to cover, or
Under low pressure/vacuum, deposit BPSG (boron-phosphorosilicate glass) and refluxing after a while, or
Under low pressure/vacuum, laminated foil.
Figure 20 M illustrates the situation of deposit BPSG, and it also may cause BPSG to cover the madial wall of low-pressure area 232.
Figure 20 N shows the schematic cross-section of MEMS microphone in the process manufactured after can etched contact hole.Can form the first contact 2082 in the first contact hole, and this first contact 2082 is provided for the electrical connection of the first membrane parts 212.Second contact point 2092 can be set in the second contact hole, to be provided for the electrical connection of pair of electrode elements 222.3rd contact point 2094 can be set in the 3rd contact hole, as the electrical connection for second pair of electrode member 224.Notice, one or more horizontal partition 2021, first vibrating diaphragm separator 242 and to electrode isolation layers 252 such as at different contact point 2082, between 2092 and 2094, provide electric isolution.Contact for the second membrane parts 214 may clearly not illustrate in Figure 20 N, but can with such as contact point 2082,2084,2092 similar modes are formed.
Figure 20 O shows with schematic cross-section, carry out such as utilizing DRIE/Bosch technique (DRIE: deep reactive ion etch) to after the back side etch of dorsal part cavity 298, final MEMS microphone.The etching that lower etch stop layer 203 can serve as DRIE technique stops, and can be removed by further special oxide etching process after DRIE technique.
Although describe in some under the background of device, very clear, these aspects also represent the description of the method to correspondence, and wherein, module or device correspond to the feature of method step or method step.Similarly, also represent in describing under the background of method step for the module of correspondence or the project of the device of correspondence or the description of feature.
Execution mode as described above is explanation of the principles of the present invention.Should be appreciated that, be apparent for the modifications and variations of layout described herein and details for others skilled in the art.Therefore, it is intended to only limited by the scope of Patent right requirement subsequently, instead of limited by with the detail presented the description of execution mode herein and the mode of explaination.
Although every claim claim that only forward reference one is single, the disclosure also contains the combination of any claim expected.

Claims (33)

1. a MEMS microphone, comprising:
First membrane parts;
To electrode member; And
Low-pressure area, described first membrane parts and described to electrode member between, described low-pressure area has the pressure less than environmental stress.
2. MEMS microphone according to claim 1, the described pressure in wherein said low-pressure area is essentially vacuum.
3. MEMS microphone according to claim 1, the described pressure in wherein said low-pressure area is less than about 50% of described environmental stress.
4. MEMS microphone according to claim 1, wherein said microphone comprise further be arranged on described to the second membrane parts on the side relative with the first membrane parts of electrode member.
5. MEMS microphone according to claim 4, wherein said first membrane parts is electrically coupled to described second membrane parts.
6. MEMS microphone according to claim 4, wherein said first membrane parts and described second membrane parts electric isolution.
7. MEMS microphone according to claim 1, wherein said microphone comprises separated second pair of electrode member with described pair of electrode elements further.
8. MEMS microphone according to claim 7, wherein said pair of electrode elements and described second pair of electrode member electric isolution.
9. MEMS microphone according to claim 1, wherein said first membrane parts has the vibrating diaphragm compliance at least about 1nm/Pa.
10. MEMS microphone according to claim 1, wherein said first membrane parts has the vibrating diaphragm compliance at least about 5nm/Pa.
11. MEMS microphone according to claim 1, wherein said low-pressure area is in seal chamber.
12. MEMS microphone according to claim 1, comprise the hinge components be coupling between described first membrane parts and supporting construction further.
13. MEMS microphone according to claim 12, wherein said hinge components comprises the wall elements being configured to low-pressure area described in lateral confinement.
14. MEMS microphone according to claim 13, wherein said wall elements is coupled to described supporting construction, makes low-pressure area described in described supporting construction hand in restrain.
15. MEMS microphone according to claim 13, wherein saidly be coupled to described supporting construction by least one gap in described hinge components independent of described hinge components to electrode member, at least one gap described extends to described supporting construction from described low-pressure area.
16. 1 kinds of MEMS microphone, comprising:
First membrane parts;
Second membrane parts, separates with described first membrane parts;
Low-pressure area, be arranged between described first membrane parts and described second membrane parts, described low-pressure area has the pressure less than environmental stress; And
Pair of electrode elements, is arranged in described low-pressure area.
17. MEMS microphone according to claim 16, the pressure in wherein said low-pressure area is vacuum substantially.
18. MEMS microphone according to claim 16, the pressure in wherein said low-pressure area is less than about 50% of described environmental stress.
19. MEMS microphone according to claim 16, wherein said low-pressure area is in seal chamber.
20. MEMS microphone according to claim 16, comprise second pair of electrode member with described pair of electrode elements electric isolution further.
21. MEMS microphone according to claim 16, comprise the one or more pillars be coupling between described first membrane parts and described second membrane parts further.
22. MEMS microphone according to claim 21, wherein said one or more pillar is electric isolution.
23. MEMS microphone according to claim 21, wherein said one or more pillar is conduction.
24. MEMS microphone according to claim 21, wherein have at least between spaced 5 μm to 20 μm of two pillars.
25. MEMS microphone according to claim 16, comprise the 3rd membrane parts further, and described 3rd membrane parts has than the rigidity of described first membrane parts or the less rigidity of the rigidity of described second membrane parts.
26. MEMS microphone according to claim 25, wherein said 3rd membrane parts is coupling between at least one membrane parts in supporting construction and described first membrane parts and described second membrane parts.
27. MEMS microphone according to claim 26, wherein at described supporting construction place, support described pair of electrode elements independent of described 3rd membrane parts.
28. 1 kinds of methods for the manufacture of MEMS microphone, described method comprises:
The first membrane parts and to electrode member between create low-pressure area; And
Material is stoped to enter in described low-pressure area enduringly, to maintain the low pressure of regulation on average enduringly.
29. methods according to claim 28, wherein create described low-pressure area and are included in described first membrane parts and describedly form cavity between electrode member.
30. methods according to claim 28, wherein, the described material that stops enduringly enters and comprises, and closes described cavity to obtain at described first membrane parts and described to the low-pressure area between electrode member under low pressure atmosphere.
31. methods according to claim 28, wherein, the pressure of described low-pressure area is less than 70% of standard atmospheric pressure.
32. methods according to claim 28, the wherein said material of prevention enduringly enters and comprises following at least one item:
Utilize non-conformal ground deposited oxide to cover the surface of described MEMS microphone;
The described surface deposition phosphosilicate (BPSG) of described MEMS microphone, and reflux under described low pressure atmosphere after a while; And
Laminated foil.
33. methods according to claim 28, comprise taking a step forward of described low pressure of establishment:
To deposit expendable material on the layer of electrode material;
Deposit diaphragm materials on described expendable material;
Construct described diaphragm materials to access described expendable material; And
Remove described expendable material;
Wherein, create described low-pressure area and comprise, from least one removing that the space previously occupied by described expendable material before described expendable material deflates, gas and fluid.
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