CN104183446B - High energy ion injection device - Google Patents
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- CN104183446B CN104183446B CN201410171523.2A CN201410171523A CN104183446B CN 104183446 B CN104183446 B CN 104183446B CN 201410171523 A CN201410171523 A CN 201410171523A CN 104183446 B CN104183446 B CN 104183446B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/047—Changing particle velocity
- H01J2237/0473—Changing particle velocity accelerating
- H01J2237/04735—Changing particle velocity accelerating with electrostatic means
- H01J2237/04737—Changing particle velocity accelerating with electrostatic means radio-frequency quadrupole [RFQ]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/05—Arrangements for energy or mass analysis
- H01J2237/053—Arrangements for energy or mass analysis electrostatic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/05—Arrangements for energy or mass analysis
- H01J2237/057—Energy or mass filtering
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Abstract
The present invention provides a kind of high energy ion injection device, the ion beam of high-energy is scanned by electric field, parallelization and filtering.The high energy ion injection device (100) of the present invention possesses：High-energy multistage linear accelerating unit (14), is accelerated to ion beam and generates high energy ion beam；Deflection unit (16), high energy ion Shu Chaoxiang semiconductor wafers travel direction is changed；And beam transmission line unit (18), the high energy ion beam deflected is transferred to chip.Beam transmission line unit (18) has beam-shaping device (32), high-energy beam scanner (34), high-energy Electric field beam parallelizer (36) and Electric field final energy filter (38).
Description
Technical field
The application advocates the priority based on Japanese patent application filed in 29 days Mays in 2013 the 2013-113474th.
The entire disclosure of which is by reference to being applied in this specification.
The present invention relates to a kind of high energy ion injection device.
Background technology
In semiconductor element manufacturing process, study plot implements following important process, and the process is used for by vacuum
In the lower crystallization for squeezing into ion to semiconductor wafer to add impurities to semiconductor wafer, so that electric conductivity changes,
And make semiconductor wafer semiconductor element.Device used in the process is referred to as ion implantation apparatus, the ion implanting
Device is accelerated the foreign atom for being generally used for semiconductor element as ion, and is driven into semiconductor wafer.
With highly integrated/high performance of semiconductor element, always using can be used in deeper being driven into semiconductor
The device of the ion implanting of high-energy in chip.This device is especially referred to as high energy ion injection device.It is used as it
In one, have the method (referenced patent document 1) for the acceleration system that ion beam is constituted with tandem electrostatic accelerator.
(batch (batch-type))
Also, the batch processed formula high-energy for the linear accelerator of high frequency for also carrying out high frequency acceleration using possessing for a long time
Ion implantation apparatus (referenced patent document 2).
Batch processed formula ion implanting is following method, i.e., more than ten silicon wafers are loaded in a diameter of 1m or so aluminium dish
Outer circumferential side, while making disk be rotated at a high speed with the degree of rotation of 1000 times per minute, while being uniformly injected into ion.In order to not
Chip is set to be flown out because of centrifugal force, the part for being loaded with chip of disk assigns 5 ° relative to the surfaces of revolution (face with rotating shaft direct cross)
The angle of left and right.Due to the rotary motion of the angle and chip, batch processed formula ion injection method is present at the center of chip
Before and after portion and end implant angle (ion is injected into the angle of chip) the problem of difference 1 ° (implant angle deviation).
Typically, there is the region for wanting to carry out ion implanting on the chip of chip and the region of ion implanting can not be carried out,
The region of ion implanting, which can not be carried out, to be covered by the organic matter for being referred to as photoresist layer.Ion can not be penetrated in injection
Photoresist layer, therefore the photoresist layer being coated with when high energy ion injects becomes very thick.Although needing what is injected
Photoresist layer is removed in region by photoetching process, if but integrated level is high and injection zone is small, occur that ion is vertically beaten
Enter the situation of the bottom of the deep hole surrounded by the wall portion of the photoresist layer towered.Ion is injected to the structure of this high aspect ratio
When need higher implant angle precision.
Especially, in the manufacture such as photographing element of CCD high-quality, ion is injected more deeply, resolution ratio is more improved, and
Sensitivity is uprised, therefore also gradually proceeds by the ion implanting (3~8MeV) of superenergy.Now, the injector angle being allowed to
It is 0.1 ° or so to spend error, it is impossible to use the batch device with larger implant angle deviation.
(single wafer high energy ion injection device)
Therefore, single wafer high energy ion injection device is put into use (patent document 3) in recent years.Basis is consolidated
Determine beam and mobile chip (rotary motion on disk), be thus uniformly injected into the horizontal direction, and single wafer is filled
Put middle moving beam (carrying out beam scanning in the horizontal direction) fixed wafer.By making scanning beam parallelization in which, not only
Implantation dosage can be made uniform in wafer face, additionally it is possible to make implant angle uniform, the problem of implant angle deviation can be solved.
In addition, both of which is that the dose uniformity of vertical is realized by moving in parallel chip with certain speed, but
Angular error will not be produced by the motion.
In addition, because single wafer ion injection device does not have unnecessary silicon wafer when carrying out the processing of several
Consumption of piece etc., thus be adapted to multi items produce on a small quantity, demand is continuously increased in recent years.
But in the production of high-quality photographing element, not only required angle precision, and also have such as without metallic pollution,
Implant damage (the remaining crystal defect after annealing) is smaller, injection depth accuracy (can accuracy of measurement) is good waits many strict want
Ask, also stay many to wait to improve part in single wafer ion injection device.
In conventional single wafer high energy ion injection device, tandem electrostatic is used as high-energy accelerated mode
Accelerator, or high frequency accelerated mode heavy-ion linear accelerator (linear accelerator).
Energy filtering magnet, beam scanner are provided with the downstream of this acceleration system and rail is scanned by magnetic field
Parallel (parallelization) magnet of the parallelization in road.No matter also, turning into beam in which scan position, Xiang Jing by parallel magnet
Incident angle (injector angle) all same of piece.The energy of ion is to 3~4MeV or so.
Also, what is used in the region (10~600keV) of more low energy compared with high energy ion injection device is (single
Chip-type) in current ion injection device a part in, use by electric field (electrode) will scan parallel track electric field
Parallel lens (patent document 4).Field parallel lens can keep the symmetry of track and will scan parallel track, therefore
Angle precision can be more improved than parallel magnet.Also, in the apparatus, it is provided with the vicinity of chip and is referred to as AEF
The Electric field deflecting electrode of (Angular Energy Filter).The valence mumber during beam transmission can be removed by AEF to send out
The ion for changing and the particle produced in beamline, therefore, it is possible to provide the beam that purity is higher.
Patent document 1：No. 3374335 publications of Japanese Patent No.
Patent document 2：Japanese Unexamined Patent Publication 2000-11944 publications
Patent document 3：No. 8035080 publications of U.S. Patent No.
Patent document 4：Japanese Unexamined Patent Publication 2003-288857 publications
The content of the invention
The present invention be in view of this situation and complete, its first purpose is to provide a kind of ion beam for making high-energy to sweep
Retouch the high energy ion injection device of deflection.
In order to solve above-mentioned problem, the high energy ion injection device of a mode of the invention from ion gun to extracting
Ion beam is accelerated, along the high energy ion injection device that beamline is transferred to chip and is injected into the chip.The dress
Put and possess, beam generating unit, with ion gun and quality analysis apparatus；High-energy multistage linear accelerating unit, to ion beam
Accelerated and generate high energy ion beam；The deflection unit of high energy beam, by high energy ion Shu Chaoxiang chips progress side
To conversion；Beam transmission line unit, chip is transferred to by the high energy ion beam deflected；And processing substrate feed unit, will
The high energy ion beam being transferred to is evenly injected into semiconductor wafer.Beam transmission line unit has beam-shaping device, height
Energy beam scanner, high-energy Electric field beam parallelizer and high-energy Electric field final energy filter.And
And, it is configured to, the high energy ion beam come out from deflection unit is entered by beam scanner and Electric field beam parallelizer
Row beam is scanned and by its parallelization, and removes quality, ion valence mumber with Electric field final energy filter by high-energy
And different being mixed into after ion such as energy is injected into chip.Also, beam scanner is set to fine-tuning triangular wave work
The Electric field beam scanner of work.
Invention effect：
According to the mode of the present invention, the diverging of beam can be suppressed.Also, can according to the another way of the present invention
Realize the high energy ion injection device that ensure that energy accuracy of measurement.
Brief description of the drawings
Fig. 1 is schematic layout and the beamline for showing schematically the high energy ion injection device involved by present embodiment
Figure.
Fig. 2 (a) is the top view for the schematic configuration for representing ion beam generation unit, and Fig. 2 (b) is to represent that ion beam generation is single
The side view of the schematic configuration of member.
Fig. 3 is to represent to include the top view of the whole layout of the schematic configuration of high-energy multistage linear accelerating unit.
Fig. 4 is to represent that the high-energy multistage for being linearly arranged with the accelerating field (gap) of multiple high-frequency reonsator front ends is straight
The block diagram of the structure of the control system of line accelerator module and converging and diverging lens.
Fig. 5 (a), Fig. 5 (b) are to represent EFM (energy spectrometer deflects electromagnet), energy width limitation slit, energy point
Analyse slit, BM (transverse center track correction deflection electromagnet), beam-shaping device, the outline knot of beam scanner (scanner)
The top view of structure.
Fig. 6 (a) is beamline after representing from beam scanner to beam parallelizer to processing substrate feed unit
Untill schematic configuration top view, Fig. 6 (b) is beamline after representing from beam scanner to beam parallelizer to base
The side view of schematic configuration untill plate processing feed unit.
Fig. 7 is the schematic diagram of the major part of one of beam scanner viewed from above.
Fig. 8 is the schematic diagram of the major part of one of beam scanner from side.
Fig. 9 is detachably to be provided with one of beam scanner along the midway path of ion beam line from downstream
Structure schematic elevational view.
Figure 10 is the schematic diagram of the another way for the deflecting electrode for representing angular energy filter device.
Figure 11 (a) is the top view for showing schematically the quadrupole lense as lateral convergence lens, and Figure 11 (b) is schematically
Represent the front view of quadrupole lense.
Figure 12 (a), Figure 12 (b) are the stereograms of one of the structure for representing electromagnet.
Figure 13 is the figure for showing schematically the opening and closing device that electromagnet possesses.
Figure 14 (a) is roughly the same with injector Faraday cup (Injector Farady cup) structure from front
Rotary transformer Faraday cup (Resolver Farady cup) schematic diagram, Figure 14 (b) be used for illustrate rotary transformer
The schematic diagram of the action of Faraday cup.
Figure 15 is the schematic diagram of Faraday cup of being grown crosswise from front.
Figure 16 (a) is to represent schematic configuration of the beam-shaping device untill beam scanner from involved by present embodiment
Top view, Figure 16 (b) is to represent the schematic configuration from the beam-shaping device involved by present embodiment to beam scanner
Side view.
Figure 17 is for illustrating the A/F of downstream earth electrode, the A/F for suppressing electrode and upstream side ground connection
The schematic diagram of magnitude relationship between the A/F of electrode.
Figure 18 is the figure of another for showing schematically beam parallelizer.
In figure：10- ion guns, 12- ion beam generation units, 14- high-energy multistage linear accelerating units, 14a- harmonic high frequencies
Shake device, the linear accelerators of 15a- the 1st, the linear accelerators of 15b- the 2nd, 16- beam deflection units, 18- beam transmission line units,
20- processing substrate feed units, 22- quality analysis apparatus, 22a- mass analyzing magmets, 22b- quality analysis slits, 24- energy
Analyze electromagnet, 26- quadrupole lenses, 27- energy widths limitation slit, 28- energy spectrometer slits, 30- deflection electromagnet, 32-
Beam-shaping device, 34- beam scanners, 36- beam parallelizers, 38- final energy filters, 42- suppress electrode, 44- from
Component high voltage power supply, 48- terminals, 50- power supplys, 52- input units, 54- control arithmetic units, 56- amplitude control units, 58-
Phase control device, 60- frequency control apparatus, 62- high frequency electric sources, 64- converging and diverging lens, 64a- lateral convergence lens,
64b- longitudinal directions convergent lens, 66- converging and diverging lens current supplies, 68- display devices, 70- storage devices, 74- suppresses electrode, 74a-
Opening, 76a- earth electrodes, 80a, 80b- Faraday cup, 82- scanner shells, 84- parallelizing lens, 87- upper magnet yokes, 87a,
Under 87b- deflecting electrodes, 88- lower yokes, 89- ground shields, 90- negative supplies, 91- vacuum tanks, 91a- coils, 91b-
Coil, 92a- opening and closing devices, 93- lower beams, 94- final energy filters, 95a- beam traps portion (Beam Dump
Sectior), 96- beams scanning space, 100- high energy ion injection devices.
Embodiment
One of the high energy ion injection device involved by present embodiment is further described in detail below.It is first
First, expect that the process of the present invention is illustrated to the present inventor etc..
(parallelization magnet)
Had using the conventional high energy ion injection device for the parallelization magnet for making parallel track by magnetic deflection field
Following problem.
If injecting high energy ion to the chip with photoresist layer, substantial amounts of gas leakage, the molecule of the gas leakage are produced
Interacted with beam ion, the valence mumber of a part of ion changes.If being changed by valence mumber during parallelization magnet,
Deflection angle is changed, therefore the collimation of beam is destroyed, and becomes different towards the injector angle of chip.
Also, the amount (number or dosage) of the ion injected is determined by using the Faraday cup being placed near chip
Beam current value and obtain, but because of valence mumber change, its measured value produces deviation, deviates predetermined injection rate, it is impossible to as such as institute in advance
The characteristic of fixed semiconductor element.
Moreover, deflection angle and rail of the parallelization carried out by 1 parallelization magnet in inner track and outer side track
Road length is different, therefore more outer siding track, and the ratio for the ion that valence mumber changes is bigger, the dose uniformity in wafer face
Also deteriorate.
Therefore, the beam transmission mode of conventional high energy ion injection device can not fully meet nearest high-precision
The requirement of injection.
Also, parallelization magnet needs the parallelization of the magnetic pole of wider width and certain length in a scanning direction interval,
Magnetic pole is further elongated when energy is uprised and becomes big, therefore weight becomes very large.In order to safely assemble and maintain device, remove
Need to strengthen outside the Intensity Design of semiconductor workshop in itself, consumption electric power also becomes very large.
If the field parallel used in current ion injection device in the preamble can be used in high-energy regions
Lens and electric field (electric pole type) energy filter (AEF：Angular Energy Filter), then it can solve these problems.Electric field
Parallelizing lens keep the symmetry of track and scanning track is alignd with central orbit direction and is carried out parallelization, and AEF exists
The ion that valence mumber has changed is removed before just reaching chip.Thus, when gas leakage is more, no energy can also be obtained
The beam of pollution, and the deviation of the implant angle of scanning direction as parallelization magnet will not be produced, as a result, can be uniform
Ground injects injection distribution and the injection rate (dosage) of accurate depth direction, and implant angle also becomes identical, and essence can be achieved
Spend very high ion implanting.Also, be made up of lightweight electrod assembly, thus compared with electromagnet can also reduce consumption electricity
Power.
It is to have invented a kind of excellent system introducing by current ion injection device in this in place of the core of the present invention
To high energy ion injection device, it is high energy devices and the dress of the high accuracy injection equal with middle current device can be carried out
Put.Hereinafter, the problem solved in this process is illustrated.Matter of utmost importance is the length of device.
During by deflected ion beam equal angular, required magnetic field is proportional to the square root of energy, and required electric field then with energy
Amount is proportional in itself.Therefore, the length of deflection pole and the square root of energy are proportional, and the length of deflecting electrode and energy into
Ratio and it is elongated.If be intended to want carries the field parallel lens and electric field AEF to realize in high energy ion injection device
High-precision angle is injected, then beam delivery system (distance untill from scanner to chip) is with using the conventional of parallelization magnet
Device compared to significantly elongated.
For example, as the high energy ion injection device for possessing parallelization mechanism by this electric field, with conventional high energy
Amount ion implantation apparatus is contemplated that ion gun, mass analyzing magmet, tandem electrostatic accelerator or high-frequency line in the same manner
Shape accelerator, beam scanner, scanning parallel track makeup are put, energy filter, injection process chamber and substrate conveying equipment
Constitution equipments such as (end stations) is assembled into the structure of substantially linear.Now, the length of conventional device is 8m or so, and device
Overall length length to 20m or so, the setting of set location and preparation, set operation etc. to turn into extensive, and setting area also becomes
Greatly.And it is further desired that maintenance after assembly alignment adjustment, device operating for each equipment is with repairing and the operation of adjustment is empty
Between.This Large ion injection device can not meet the configuration of the plant bulk in semiconductor production line and workshop production line is real
The requirement that feelings are combined.
Due to this situation, the purpose of the structure of the beamline in a mode of the invention is, can be true by realizing
Setting, preparation and setting operation and the upkeep operation of sufficient operating area and simplification/efficient activity set location are protected, and suppresses to set
Putting the technology of area, there is provided a kind of high-precision high energy ion for possessing and having field parallel lens and electric field energy filter
Injection device.
(the type beamline of turning back of U-shaped)
Object defined above can realize in the following way, i.e., by including being accelerated to the ion beam generated in ion gun
The long line part of multiple units；And the long line part structure for the multiple units being injected into including being adjusted to scanning beam in chip
Into the beamline of high energy ion injection device, and it is set to the type of turning back of the horizontal U-shaped with opposite long line part and penetrates
Bunch.According to the length of the unit accelerated from ion gun to ion, make to include beam scanner, beam parallelizer,
The length of the beam transport unit of energy filter etc. is configured to the length with the same length, so as to realize this cloth
Office.Also, in order to carry out upkeep operation, fully wide space is provided between 2 long line parts.
The mode of the present invention is completed premised on the layout of such beamline, and its object is to provide one kind
The ion beam of high-energy can be scanned in the range of sufficiently above wafer size, and by asked in beam transmission
The scanning of the good high energy beam of responsiveness of transmission can be stopped during topic at once, high-precision injection can be maintained all the time
High energy ion injection device.
The high energy ion injection device of the mode of the present invention, it is accelerated and given birth to the ion produced in ion gun
Into ion beam, along beamline is by beam transmission to chip and is injected into the chip, wherein, the high energy ion injection
Device possesses：Beam generating unit, with ion gun and quality analysis apparatus；High-energy multistage linear accelerating unit, to ion
Shu Jinhang accelerates and generates high energy ion beam；The deflection unit of high energy beam, by the high energy ion Shu Chaoxiang chips
Travel direction is changed；Beam transmission line unit, chip is transferred to by the high energy ion beam deflected；And processing substrate supply is single
Member, the high energy ion beam that will be transmitted to is evenly injected into semiconductor wafer.Beam transmission line unit has beam-shaping
Device, high-energy beam scanner, high-energy are filtered with Electric field beam parallelizer and high-energy Electric field final energy
Device, and be configured to, the beam scanner and the Electric field beam are passed through to the high energy ion beam come out from deflection unit
Parallelizer carries out beam scanning and by its parallelization, and removed by the high-energy with Electric field final energy filter
Different being mixed into after ion such as quality, ion valence mumber and energy is injected into chip.
High-energy in the structure is set to beam scanner with the Electric field beam scanning of fine-tuning triangular wave work
Device.By being set to respond faster Electric field, can design makes when being contemplated to generation electric discharge etc. in ion implantation process
When beam becomes unstable and injection rate and becomes uneven, stop injection at once, and restart injection at once after stabilization
System, can maintain to inject precision under any circumstance.Also, working frequency is easily set to variable frequency, Neng Gou
The amount for the crystal defect that control is produced in silicon crystallization during ion implanting, so as to improve the quality of product.
Electric field beam scanner has 1 pair of deflecting electrode, but in order to which high-speed response can not apply too high to the electrode
Voltage.However, in order to enter to be about to the high accuracy injection that the whole implantation dose non-uniformity of wafer face is suppressed to less than 0.5%,
It must tie up the sweep limits of sufficiently above wafer size.Therefore, relative to high energy beam, beam scanner, which must have, fills
The deflection angle divided.Therefore, in the present invention, by being configured to, the interval of the deflecting electrode pair is set to D1, by beam traveling side
To length be set to L1When, meet L1≥5D1, thus obtain sufficient deflection angle.
According to the present invention a mode, can in the range of sufficiently above wafer size to scan high-energy ion beam
It is scanned, the high accuracy that can carry out that the inhomogeneities of implantation dosage is suppressed into less than 0.5% before chip is reached is noted
Enter.Also, it during the problems such as producing the electric discharge of electrode in beam transmission, can carry out that the responsiveness of ion implanting can be stopped at once
The scanning of good high energy beam.Thus, it is possible to maintain high-precision injection all the time.
Here, the high energy ion injection device of a form of present embodiment is that the ion produced in ion gun is carried out
Accelerate, as beam transmission to chip and the ion implantation apparatus in chip is injected into along beamline.The device is will
The ion beam of parallelization is accurately irradiated to mechanical scanning chip on the move and is injected into the device in chip, and it has
It is standby：High-energy multistage linear accelerating unit, is accelerated to ion beam and generates high energy ion beam；Deflection unit, by high energy
The track for measuring ion beam is changed towards chip travel direction；And beam transmission line unit, the high energy ion beam deflected is passed
It is defeated to arrive chip.
The height come out from the high-energy multistage linear accelerating unit for the high frequency (exchange way) that high acceleration is carried out to ion beam
Energy ion beam has a range of Energy distribution.Therefore, beam scanning is carried out for the ion beam of the high-energy to back segment
And mechanical scanning chip on the move is irradiated to after beam parallelization, it is necessary to implement in advance high-precision energy spectrometer, in
The correction of heart track and the adjustment of beam converging and diverging.
Beam deflection unit possesses at least two deflection electromagnet in high precision, at least one energy width limitation slit and energy
Analyze slit, and at least one lateral convergence equipment.Multiple deflection electromagnet are configured to, and critically make corrections high energy ion beam
Energy spectrometer and ion implantation angle, and suppress power dissipation.The electromagnet of energy spectrometer is carried out in high accuracy deflection electromagnet
On nmr probe and hall probe are installed, and hall probe is only installed on other electromagnet.Nmr probe is used
In the correction of hall probe, hall probe is used for the constant feedback control in magnetic field.
Beam transmission line unit can carry out beam scanner uni beam parallelization to the ion beam of high-energy, and scanning beam is high
Precision it is irradiated to mechanical scanning chip on the move and injects ion.
Hereinafter, refer to the attached drawing further carries out detailed to one of the high energy ion injection device involved by present embodiment
Describe in detail bright.In addition, adding same-sign to identical important document in brief description of the drawings, and suitably omit repeat specification.Also, it is described below
Structure be example, not to the scope of the present invention carry out it is any limit.
(high energy ion injection device)
First, the structure to the high energy ion injection device involved by present embodiment is briefly described.In addition, this
The content of specification can be applied not only to the ion beam as one of the species of charged particle, additionally it is possible to be applicable to own
The device of charged particle beam.
Fig. 1 is to show schematically the schematic layout of the high energy ion injection device 100 involved by present embodiment and penetrate
The figure of bunch.
High energy ion injection device 100 involved by present embodiment is that the ion with the linear accelerated mode of high frequency adds
The ion implantation apparatus of fast device and high energy ion transmission beamline, and the ion produced in ion gun 10 is accelerated,
Along beamline is as beam transmission to chip (substrate) 200 and is injected into chip 200.
As shown in figure 1, high energy ion injection device 100 possesses：Ion beam generation unit 12, generates ion and carries out matter
Amount analysis；High-energy multistage linear accelerating unit 14, is accelerated to ion beam and becomes high energy ion beam；Beam is inclined
Turn unit 16, carry out energy spectrometer, central orbit correction and the control of power dissipation of high energy ion beam；Beam transmission line list
Member 18, chip is transferred to by the high energy ion beam analyzed；And processing substrate feed unit 20, the high-energy that will be transmitted to from
Beamlet is evenly injected into semiconductor wafer.
Ion beam generation unit 12 has ion gun 10, extracts electrode 40 and quality analysis apparatus 22.Ion beam generation is single
In member 12, beam is accelerated while extraction from ion gun 10 by extracting electrode, and the beam for having extracted acceleration passes through quality point
Analysis apparatus 22 carries out quality analysis.Quality analysis apparatus 22 has mass analyzing magmet 22a and quality analysis slit 22b.Quality
Analysis slit 22b is configured in immediately mass analyzing magmet 22a dead astern sometimes, but is configured in embodiment in its next structure
Into in the i.e. inlet portion of high-energy multistage linear accelerating unit 14.
The result of quality analysis is carried out by quality analysis apparatus 22, the ionic species needed for injection is only picked out, selects
The ion beam of the ionic species gone out be directed to after high-energy multistage linear accelerating unit 14.Pass through high-energy multistage straight line
Accelerator module 14, the direction for the ion beam being further accelerated is changed by beam deflection unit 16.
Beam deflection unit 16 has energy spectrometer electromagnet 24, the quadrupole lense of the lateral convergence of suppression power dissipation
26th, energy width limitation slit 27 (with reference to Fig. 5 described later), energy spectrometer slit 28 and the deflection electromagnet with turning function
30.In addition, energy spectrometer electromagnet 24 is sometimes referred to as energy filtering electromagnet (EFM).High energy ion beam is single by deflecting
The conversion of first travel direction, and towards the direction of substrate wafer.
Beam transmission line unit 18 is used to be transferred from the ion beam that beam deflection unit 16 leaves, and it has by convergence/hair
Dissipate beam-shaping device 32, beam scanner 34, beam parallelizer 36 and final energy filter 38 that lens group constitutes (including
Final energy separates slit).The length of beam transmission line unit 18 is according to ion beam generation unit 12 and high-energy multistage straight line
The length of accelerator module 14 and design, link and formed the layout of generally U-shaped at beam deflection unit 16.
The end in the downstream of beam transmission line unit 18 is provided with processing substrate feed unit 20, in injection process chamber
Inside accommodate：Beam monitor, the beam electronic current of measurement ion beam, position, implant angle, up and down converging and diverging angle, direction
Ion distribution etc.；Anti static device, prevents the electrostatic of substrate produced by ion beam；Wafer transport mechanism, moves into and takes out of
Chip (substrate) 200 is simultaneously set to appropriate position/angles；ESC (Electro Static Chuck), is protected in ion implanting
Hold chip；And wafer scanners structure, chip is made to beam scanning side with the corresponding speed of variation with beam current in injection
Moved to right angle orientation.
The high energy ion injection device 100 that each unit so is configured into U-shaped reduces setting area and can be true
Protect good workability.Also, in high energy ion injection device 100, by the way that each unit and each device are set into modular structure,
So as to be loaded and unloaded, assembled according to beamline reference position.
Then, further it is described in detail to constituting each unit of high energy ion injection device 100, each device.
(ion beam generation unit)
Fig. 2 (a) is the top view for the schematic configuration for representing ion beam generation unit, and Fig. 2 (b) is to represent that ion beam generation is single
The side view of the schematic configuration of member.
As shown in Fig. 2 (a), Fig. 2 (b), being provided with the outlet side for the ion gun 10 for being configured at beamline most upstream is used for
The extraction electrode 40 of ion beam is extracted from the plasma of the generation in ion chamber (arc chamber).Extracting the downstream of electrode 40
Near side, the extraction that the electronics direction for suppressing contained from the ion beam that electrode 40 is extracted is extracted extracts the adverse current of electrode 40 is provided with
Suppress electrode 42.
Ion gun 10 is connected with ion gun high voltage power supply 44.Be connected with extraction power supply between electrode 40 and terminal 48 extracting
50.It is configured with the downstream for extracting electrode 40 for isolating predetermined ion from the ion beam of injection and will be separated
The quality analysis apparatus 22 that ion beam takes out.
Shown in Fig. 5 as be described hereinafter, the forefront in the linear accelerating portion housing of high-energy multistage linear accelerating unit 14
It is configured with the Faraday cup 80a (injector (Injector)) of total beam current value for measuring ion beam.
Figure 14 (a) is rotary transformer farad roughly the same with injector Faraday cup 80a structure from front
The 80b schematic diagram, Figure 14 (b) is the schematic diagram for illustrating rotary transformer Faraday cup 80b action.
Injector Faraday cup 80a is configured to pass in and out from above-below direction in beamline by drive mechanism, also,
It is configured to rectangular bucket-shaped shape long in the horizontal direction, and by opening portion towards the upstream side of beamline, in adjustment ion
When source and quality analysis electromagnet, in addition to measuring the purpose of total beam electronic current of ion beam, it is additionally operable to as needed in beam
The completely cut off ion beam for reaching beamline downstream on line.In addition, it has been observed that height immediately ahead of injector Faraday cup 80a
Quality analysis slit 22b is configured with the inlet portion of energy multistage linear accelerating unit 14, and is configured to single quality analysis
Slit or the mode of the different multiple slits of width is selected according to the size of quality or mass slit width can be become
More off grade or multistage mode.
(high-energy multistage linear accelerating unit)
Fig. 3 is the top view for the integral layout for representing the schematic configuration comprising high-energy multistage linear accelerating unit 14.It is high
Multiple linear accelerators that energy multistage linear accelerating unit 14 possesses the acceleration for carrying out ion beam clip the height of more than 1
Frequency resonator 14a accelerating gap.High-energy multistage linear accelerating unit 14 can be right by the effect of high frequency (RF) electric field
Ion is accelerated.In Fig. 3, high-energy multistage linear accelerating unit 14 is by possessing the basic multistage of high energy ion injection
High-frequency reonsator 14a the 1st linear accelerator 15a, and it is further equipped with the multistage height of the addition of superenergy ion implanting
Frequency resonator 14a the 2nd linear accelerator 15b is constituted.
On the other hand, in the ion implantation apparatus accelerated using high frequency (RF), voltage is must take into consideration as high-frequency parameter
Amplitude V [kV], frequency f [Hz].Moreover, when carry out multistage high frequency accelerate when, using mutual high-frequency phase φ [deg] as
Parameter is added.Furthermore, it is necessary to for controlling ion beam after accelerating midway and accelerating above and below by convergence/divergence effect
The magnetic field lens (such as quadrupole electromagnet) or electric field lens (such as electrostatic quadrupole electrode) of left and right diffusion, their operating parameters
Optimum value according to ion by this at the time of ion energy and change, and the intensity of accelerating field is influenced whether
Assemble and dissipate, therefore, their value is determined again after high-frequency parameter is determined.
Fig. 4 is to represent that the high-energy multistage for being linearly arranged with the accelerating field (gap) of multiple high-frequency reonsator front ends is straight
The block diagram of the structure of the control system of line accelerator module and converging and diverging lens.
High-energy multistage linear accelerating unit 14 includes the high-frequency reonsator 14a of more than 1.It is straight as high-energy multistage
Constitutive requirements needed for the control of line accelerator module 14 need：Input unit 52, its condition being used for needed for operator's input；Control
Arithmetic unit 54 processed, it is used to calculate various parameters by the condition value inputted, and further each constitutive requirements are controlled
System；Amplitude control unit 56, it is used to adjust high-frequency voltage amplitude；Phase control device 58, it is used to adjust high-frequency phase；Frequently
Rate control device 60, it is used to control higher frequency；High frequency electric source 62；Converging and diverging lens current supply 66, it is used for converging and diverging
Lens 64；Display device 68, it is used to show operating parameters；And storage device 70, it is used to store the parameter being determined.And
And, the numerical computations code (program) in advance various parameters to be carried out with numerical computations is built-in with control arithmetic unit 54.
In the control arithmetic unit 54 of the linear accelerator of high frequency, by built-in numerical computations code, with the bar inputted
High-frequency parameter (voltage amplitude, frequency, phase) is calculated to the acceleration and convergence and diverging simulation of ion beam based on part
To obtain optimal efficiency of transmission.Also, the ginseng of the converging and diverging lens 64 for effectively transmitting ion beam is also calculated simultaneously
Number (Q coil currents or Q electrode voltages).The various parameters calculated are shown in display device 68.For more than high-energy
The acceleration environment of the ability of multistage linear accelerating unit 14, indicates that the display content of no solution is shown in display device 68.
Voltage amplitude parameter delivers to amplitude control unit 56 by control arithmetic unit 54, and amplitude control unit 56 is to high-frequency electrical
The amplitude in source 62 is adjusted.Phase parameter delivers to phase control device 58, phase of the phase control device 58 to high frequency electric source 62
Position is adjusted.Frequency parameter delivers to frequency control apparatus 60.Frequency control apparatus 60 enters to the output frequency of high frequency electric source 62
Row control, and the high-frequency reonsator 14a of high-energy multistage linear accelerating unit 14 resonant frequency is controlled.Control fortune
Device 54 is calculated to be controlled converging and diverging lens current supply 66 always according to the converging and diverging lens parameter calculated.
The inside of the linear accelerator of high frequency or be configured with before and after it requirement be used for effectively transmit ion beam
Converging and diverging lens 64.That is, alternately possessing before and after the accelerating gap of multistage high-frequency reonsator 14a front end has diverging
Lens or convergent lens, and the rear configuration of the lateral convergence lens 64a (referring to Fig. 5) in the 2nd linear accelerator 15b end
Have additional longitudinal convergent lens 64b (referring to Fig. 5), the high-energy by high-energy multistage linear accelerating unit 14 is accelerated from
The convergence and diverging of beamlet are adjusted, so that the ion beam of optimal two dimensional beam profile section is incident upon the beam deflection list of back segment
Member 16.
The every tens nanometers of seconds switching in direction of the electric field produced in the accelerating gap of the linear accelerator of high frequency is carried out to ion
The direction of acceleration and the direction slowed down.In order to which ion beam is accelerated into high-energy, in the accelerating gap at all tens
Electric field must be directed towards acceleration direction when ion enters accelerating gap.The ion being accelerated in a certain accelerating gap adds until next
The electric field in fast gap is towards the space (drift that must be shielded by the electric field between 2 accelerating gaps during untill acceleration direction
Move space).It is too fast or slowly can all be decelerated, therefore be unable to reach high-energy excessively.Acceleration phase is kept up with all accelerating gaps
Position turns into very strict condition, therefore reaches that predetermined power such case turns into and passed through what is carried out by the linear accelerator of high frequency
For the strict situation about selecting of quality, energy and electric charge (factor for determining speed).This expression, the linear accelerator of high frequency
It can be described as outstanding velocity filter.
(beam deflection unit)
As shown in figure 1, beam deflection unit 16 includes the energy spectrometer electromagnetism that electromagnet (EFM) is deflected as energy filtering
The horizontal meeting of power dissipation after iron 24, energy width limitation slit 27 (referring to Fig. 5), energy spectrometer slit 28, control deflection
Poly- quadrupole lense 26 and the deflection electromagnet 30 with implant angle correcting function.
Fig. 5 (a), Fig. 5 (b) are to represent EFM (energy spectrometer deflects electromagnet), energy width limitation slit, energy point
Analyse slit, BM (transverse center track correction deflection electromagnet), beam-shaping device, the outline knot of beam scanner (scanner)
The top view of structure.In addition, the symbol L shown in Fig. 5 (a) represents the central orbit of ion beam.
By the ion beam after high-energy multistage linear accelerating unit 14 because synchrotron oscillation forms Energy distribution.And
And, when the adjustment amount of accelerating phase is larger, central value is straight from high-energy multistage sometimes slightly offset from the beam of predetermined energy
Line accelerator module 14 is projected.Therefore, it can be passed through with only having desired energetic ion by beam deflection unit 16 described later
Mode set energy filtering deflection magnet (EFM) magnetic field, and pass through energy width and limit slit 27 and energy spectrometer slit
28 make a part for beam optionally through so that the energy of ion is consistent with setting value.The ion beam that can pass through
The transverse width for the opening that energy width can limit slit and energy spectrometer slit by energy width is preset.Only pass through
The ion of energy spectrometer slit is directed to the beamline of back segment and is injected into chip.
If the ion beam with Energy distribution be injected into control into magnetic field in foregoing feedback loop control system it is constant
The energy filtering electromagnet (EFM) of value, then all injection ion beams deflected each along designed path and cause power dissipation,
Ion in the range of desired energy width limits slit 27 by being arranged at the energy width of EFM near exits.In the position
Put, power dissipation gradually increases to maximum, and the beam dimensions σ obtained by emittance1(beam during without energy width
Size) it is gradually reduced to minimum value, and the beam width obtained by power dissipation is wider than the beam width based on emittance.With narrow
Seam is when blocking the ion beam of this state, and spatial distribution is clearly blocked, but Energy distribution with 2 σ1Corresponding energy width
And as more blunt otch.In other words, though for example, slit width is set as into size corresponding with 3% energy width,
The part for having the ion for being less than 3% with the energy difference of predetermined Implantation Energy bumps against slot wall and disappeared, and opposing energy difference is big
Then pass through slit in a part for 3% ion.
Energy spectrometer slit is arranged at σ1As minimum position.On the position, σ1It is small to can be with compared with slit width
The degree ignored, therefore Energy distribution also almost universally clearly blocked with spatial distribution.For example, energy spectrometer slit
When A/F is also set to 3% size (0.03 η) equivalent to energy width, slit can be limited by energy width
Ion of the energy difference more than 3% is all blocked herein.As a result, be initially the Energy distribution of rectangle beam it is narrow by 2
Become that there is peak value 0% after seam, 1/2 is highly reduced at ± 3%, is drastically reduced afterwards to zero dome-type distribution.
The quantity of the less ion of energy difference is relative to become many, therefore with only setting an energy spectrometer slit and keeping substantially rectangular energy
Amount distribution and compare during by slit, energy width substantially reduces.
When the energy of the beam accelerated by linear accelerator is slightly offset from predetermined Implantation Energy, double aperture slit system tool
Have makes the energy of the beam after deviate the effect reduced by pruning the effect of the end of Energy distribution.For example, energy
When width deviates for ± 3% and also 3% energy, become the energy of the dome-shaped distribution by the Energy distribution after double aperture slit
The half of just (plus) side of amount, its center of gravity being distributed is that center of energy is substantially arrived near Δ E/E=1%.On the other hand, when with
When single energy analysis slit is blocked, center turns into Δ E/E=1.5%.The unsharp orientation of effect one of distribution is set to suppress energy
Work in the direction of center deviation.
Thus, in the acceleration system of this both sides is deviateed with energy width and energy, in order to reduce energy width and energy
This both sides of the deviation at amount center and improve can accuracy of measurement, the energy effectively carried out by double aperture slit limits.
Energy spectrometer electromagnet needs higher magnetic field precision, therefore is provided with the high accuracy for carrying out accurate magnetic field measuring
Measure device 86a, 86b (with reference to Fig. 5 (b)).Measure device 86a, 86b, which have been appropriately combined, is also referred to as MRP (magnetic resonance spies
Head) NMR (nuclear magnetic resonance) probes and hall probe device, MRP is used to correct hall probe, and hall probe is used for magnetic field
Carry out certain feedback control.Also, energy spectrometer electromagnet is with tight accurate manufacturing technique, so that the inhomogeneities in magnetic field is less than
0.01%.Moreover, it is 1 × 10 that current settings precision and current stability, are connected with each electromagnet-4More than power supply and its
Control device.
Also, between the upstream side of energy spectrometer slit 28 and energy spectrometer slit 28 and energy spectrometer electromagnet 24,
Quadrupole lense 26 is configured with as lateral convergence lens.Quadrupole lense 26 can be made up of Electric field or magnetic field type.Thus, from
Power dissipation after beamlet is deflected by U-shaped is inhibited, and beam dimensions diminish, therefore, it is possible to efficiently transmit beam.
Also, reduce in the magnetic pole piece conductance of deflection electromagnet, therefore leakage is effectively configured for example near energy spectrometer slit 28
Gas discharge vavuum pump.When being vortexed molecular pump using electromagnetic levitation type, it is necessary to be arranged at not by energy spectrometer electromagnet 24 and deflection
The position of the electromagnet leakage magnetic field influence of electromagnet 30.By the vavuum pump, it is prevented from deflection unit by residual gas
The decline of beam electronic current caused by volume scattering.
If the quadrupole lense, scattered adjustment in high-energy multistage linear accelerating unit 14 are whole with quadrupole lense 26 and beam
There is larger rigging error on shape device 32, then the central orbit deformation of the beam as shown in Fig. 5 (b), beam easily bumps against narrow
Seam and disappear, also cause the deviation of final implant angle and injection phase.However, in the horizontal plane, according to injector angle
The magnetic field compensating value of the deflection electromagnet 30 of correcting function is spent, the central orbit of beam is certain by beam scanner 34
The heart.Thus, the deviation of implant angle is corrected.If moreover, applying appropriate offset voltage to beam scanner 34, from scanner
The deformation of central orbit untill chip is disappeared, and the left and right deviation of injection phase is released from.
Acted on by the ion of each deflection electromagnet during beam deflection unit 16 by centrifugal force and Lorentz force, it
Cooperate and draw the track of arc-shaped.It should match somebody with somebody and share formula mv=qBr to represent.M is that the quality of ion, v are speed, q
It is the logical quantity of magnetism density for deflecting electromagnet, the radius of curvature that r is track for the valence mumber of ion, B.The only radius of curvature of the track
The ion that the radius of curvature of pole centers of the r with deflecting electromagnet is consistent can be by deflecting electromagnet.In other words, the valency of ion
Number mutually meanwhile, it is capable to by be applied with constant magnetic field B deflection electromagnet ion for only have specific momentum mv from
Son.EFM is referred to as energy spectrometer electromagnet, but is actually the device for analyzing Ion Momentum.BM and ion generation unit matter
Amount analysis electromagnet is all momentum filter.
Also, beam deflection unit 16 can make 180 ° of deflected ion beam by using multiple magnet.Thereby, it is possible to
Simple structure realizes the high energy ion injection device 100 that beamline is U-shaped.
As shown in Fig. 5 (a), beam deflection unit 16 will be from high-energy multistage linear accelerating using energy spectrometer electromagnet 24
90 ° of the deflected ion beam that unit 14 comes out.And course of the beam is further deflected using track correction dual-purpose deflection magnet 30
90 °, and it is injected into the beam-shaping device 32 of beam transmission line unit 18 described later.32 pairs of beams injected of beam-shaping device enter
Row shaping is simultaneously supplied to beam scanner 34.Also, prevented by the lensing of the quadrupole lense 26 shown in Fig. 5 (b) by penetrating
Dissipated caused by the power dissipation of beam, or expand effect to prevent that beam from becoming using the beam caused by power dissipation
It is small.
Figure 11 (a) is the top view for showing schematically the quadrupole lense as lateral convergence lens, and Figure 11 (b) is schematically
Represent the front view of quadrupole lense.Show that the electrode of the beamline direct of travel of quadrupole lense 26 is long in Figure 11 (a) top view
Degree, and the beam for the energy selected of energy analyzer (EFM deflection magnets) 24 is shown, the beam of lateral divergence passes through four
Pole lens 26 are by the effect of lateral convergence.Meeting by being produced by the electrode of quadrupole lense 26 is shown in Figure 11 (b) front view
The lateral convergence effect of beam caused by poly- disperse function.
As described above, being accelerated to the ion produced in ion gun and being transferred to chip and squeeze into ion implantation apparatus
In, beam deflection unit 16 utilizes multiple electromagnetism between high-energy multistage linear accelerating unit 14 and beam transmission line unit 18
Iron carries out 180 ° of deflections of ion beam.That is, energy spectrometer electromagnet 24 and track correction dual-purpose deflection electromagnet 30 is respectively constituted
Turn into 90 degree for deflection angle, as a result, being configured to total deflection angle turns into 180 degree.In addition, by 1 magnet carry out it is inclined
The amount of turning is not limited to 90 ° or following combination.
The magnet of 45 ° of+2 amount of deflections of magnet of (1) 1 90 ° of amount of deflection
The magnet of (2) 3 60 ° of amount of deflections
The magnet of (3) 4 45 ° of amount of deflections
The magnet of (4) 6 30 ° of amount of deflections
The magnet of 120 ° of+1 amount of deflection of magnet of (5) 1 60 ° of amount of deflections
The magnet of 150 ° of+1 amount of deflection of magnet of (6) 1 30 ° of amount of deflections
It is the road of turning back in the beamline of U-shaped as the beam deflection unit 16 in energy spectrometer portion, constitutes the unit
The radius of curvature r of deflection electromagnet limits the ceiling capacity of beam that can be transmitted, and be determination device whole width and
The important parameter (referring to Fig. 5) of the width of the maintenance area in center.It is maximum without reduction by the way that the value of radius of curvature is optimized
The whole width of device can be just suppressed to minimum by energy.Also, thus, high-energy multistage linear accelerating unit 14 and beam
Interval between transmission line unit 18 broadens, it can be ensured that sufficient working space R1 (referring to Fig. 1).
Figure 12 (a), Figure 12 (b) are the stereograms of one of the structure for representing electromagnet.Figure 13 is to show schematically electromagnetism
The figure for the opening and closing device that iron possesses.As shown in Figure 12 (a), Figure 12 (b), energy spectrometer electromagnet 24 and deflection electromagnet are constituted
30 electromagnet for example by upper magnet yoke 87, lower yoke 88, inner side side yoke 89a, outside side yoke 89b, upper boom (not shown), under
Bar 93, coil 91a and lower coil 91b are constituted.And as shown in figure 13, outside side yoke 89b be divided into 2 part 89b1 and
89b2, and turn into and can be split around in outside by opening and closing device 92a, 92b, its is not shown, and is configured to load and unload structure
Into beamline guiding piece container.
Also, the vacuum tank of the central portion of beam deflection unit 16, such as accommodate energy width limitation slit 27, four
The container of pole lens 26, energy spectrometer slit 28 etc. is the structure that can be easily loaded and unloaded from beamline.Thereby, it is possible to tieed up
When protecting operation, easily passed in and out in the workspace in U-shaped beamline center.
High-energy multistage linear accelerating unit 14 possesses the multiple linear accelerators for carrying out ion acceleration.It is multiple it is linear plus
Speed variator respectively have common linking part, and the linking part relative in multiple electromagnet specific energy analysis slit 28 more lean on
The energy spectrometer electromagnet 24 of upstream side is constituted in removably mode.Similarly, beam transmission line unit 18 also can be relative to
Deflection electromagnet 30 is constituted in removably mode.
Also, be arranged at specific energy analysis slit 28 upstream side includes the energy spectrometer electromagnet 24 of electromagnet
The high-energy multistage linear accelerating unit 14 being configured to relative to upstream can be loaded and unloaded or linked.Also, penetrated by modular
Bunch unit constitute beam transmission line unit 18 described later when, be arranged at specific energy analysis slit 28 farther downstream side deflection electricity
Magnet 30 is configured to load and unload or link relative to the beam transmission line unit 18 in downstream.
Linear accelerator and beam deflection unit are respectively arranged on planar bracket, and are configured to by respective equipment
Ion beam trajectory is actually contained on 1 horizontal plane (track after being deflected except final energy filter).
(beam transmission line unit)
Fig. 6 (a) is beamline after representing from beam scanner to beam parallelizer to processing substrate feed unit
Untill schematic configuration top view, Fig. 6 (b) is beamline after representing from beam scanner to beam parallelizer to base
The side view of schematic configuration untill plate processing feed unit.
Only have required ionic species to be separated by beam deflection unit 16, the ion as only required energy value
Beam desired section shape is shaped as by beam-shaping device 32.As shown in Figure 5, Figure 6, beam-shaping device 32 is by Q (four
Pole) (Electric field or magnetic field type) the convergence/divergence lens group such as lens constitutes.The beam of section shape with shaping passes through
Scanning direction of the beam scanner 34 along the plane parallel to Fig. 6 (a).For example, being configured to include lateral convergence (longitudinal divergence)
Lens QF/ lateral divergences (assemble longitudinal direction) lens QD/ lateral convergence (longitudinal divergence) lens QF 3 pole Q lens groups.According to need
Will, beam-shaping device 32 can be separately formed by lateral convergence lens QF, lateral divergence lens QD respectively, or combine it is multiple and
Constitute.
As shown in figure 5, the positive front portion of the beam-shaping device 32 of forefront in scanner shell is configured with for measuring
The Faraday cup 80b (being referred to as rotary transformer Faraday cup) of total beam current value of ion beam.
Figure 14 (a) is the schematic diagram of the rotary transformer Faraday cup 80b from front, and Figure 14 (b) is to be used to illustrate rotation
Change the schematic diagram of depressor Faraday cup 80b action.
Rotary transformer Faraday cup 80b is configured to pass in and out from above-below direction in beamline by drive mechanism,
Also, it is configured to the rectangular bucket-shaped shape with long side in the horizontal direction and by opening portion towards the upstream side of beamline,
When adjusting linear accelerator and beam deflection portion, in addition to measuring the purpose of total beam electronic current of ion beam, basis is additionally operable to
Need the completely cut off ion beam for reaching beamline downstream in beamline.Also, rotary transformer Faraday cup 80b, beam
Scanner 34, suppression electrode 74 and earth electrode 76a, 78a, 78b are contained in scanner shell 82.
Beam scanner 34 is with the edge horizontal direction orthogonal with the direct of travel of ion beam by the electric field of cyclical swing
The deflection scanning device (also referred to as beam scanner) of shuttle-scanning is periodically carried out to ion beam.
Relevant direction of beam travel, beam scanner 34 possess with clip ion beam by way of region it is opposite
1 couple (2) opposed scan electrode (bipolar deflection scanning electrode) of configuration, is similar to the constant of 0.5Hz~4000Hz scopes
The scanning voltage of the triangular wave of the positive and negative variation of frequency is applied to 2 opposite electrodes with contrary sign respectively.The scanning voltage is 2
Generation makes the electric field by beam deflection herein and variation in the gap of individual opposite electrode.Also, according to the week of scanning voltage
Phase property changes, and is scanned in the horizontal direction by the beam in gap.
When carrying out high energy ion injection, the amount of the crystal damage generated in silicon wafer interior is inversely proportional with scan frequency.
Also, crystal damage amount influences the quality of produced semiconductor equipment sometimes.Now, can be by freely setting scanning frequency
Rate improves the quality of produced semiconductor equipment.
Moreover, in the state of no application scanning voltage, the beam spot measured to make corrections near chip deviates
Amount, offset voltage (fixed voltage) is overlapped in scanning voltage.By the offset voltage, sweep limits will not left and right deviation, energy
Enough realize symmetrical ion implanting.
In the downstream of beam scanner 34, configured in the suppression electrode 74 that there is opening by region of ion beam 2
Between individual earth electrode 78a, 78b.In upstream side, although be configured with earth electrode 76a in front of scan electrode, but according to need
It can configure and the mutually isostructural suppression electrode in downstream.Suppress electrode suppression electronics to invade to positive electrode.
Also, ground shield 89 is configured with above and below deflecting electrode 87a, 87b.Ground shield prevents attached
Band moves into the positive electrode of cocurrent incident beam scanner 34 in the secondary electron of beam from outside.By suppressing electrode and earth shield
Plate, the power supply of scanner is protected, and being stabilized of track of ion beam.
The rear of beam scanner 34 possesses beam and is resident (Beam Park) function.Beam is resident to be configured to by penetrating
The ion beam of beam scanning device as needed carry out level it is big deflect and imported into beam trap.
Beam is resident as following system, even carry out producing electric discharge of electrode etc. during ion implanting it is not expected that barrier
Hinder, and continue injection action in this condition, then produce the bad grade of uniformity of dosage injection it is bad when, it is instantaneous (10 μ s with
It is interior) stop beam transmission system.In fact, beam current significantly reduced moment is being observed, by beam scanning power supply
Output voltage brings up to 1.5 times of voltage corresponding with maximum sweep width, and beam is imported into penetrating beside parallel lens
In beam collector.The beam exposure position on chip at the time of producing obstacle by storing, after obstacle is released above and below progress
The chip of scanning motion reaches the moment of the position, beam is returned to original track, thus as what does not all occur one
Sample continues ion implanting.
The power supply of this high-speed response can not be set voltage too high (mainly in terms of cost the problem of).On the other hand,
For the uniformity of the implantation dosage that obtains height, it is necessary to take the sweep limits for being wider than chip.Therefore, beam scanner needs
The ability that high energy beam can be made fully to deflect.The ability can be by the deflecting electrode to beam scanner interval and length
Limited to realize.The present invention energy area in by electrode length be set to interval more than 5 times.
In scanning housing, beam scanning space portion is arranged at longer interval in the downstream of beam scanner 34
It is interior, consist of even if beam scanning angle it is narrow and small when can also obtain sufficient sweep length.Positioned at beam scanning space
The rear of the scanning housing in the downstream in portion, so that the direction of the ion beam deflected turns into the ion beam before beam scan deflection
The mode in direction is adjusted, that is, be provided with turns into the beam parallelizer 36 that parallel mode bends return with beamline.
Produced in beam parallelizer 36 aberration (central part of beam parallelizer and the focal length of left and right end portions it
Difference) it is square proportional to the deflection angle of beam scanner 34, therefore beam scanning space portion is set to longer and by deflection angle
It is set to the smaller aberration for being remarkably contributing to suppress beam parallelizer.If aberration is larger, ion beam is injected to semiconductor wafer
When, center portion is different with beam-divergence angle with left and right end portions beam dimensions in the wafer, therefore is produced sometimes in the quality of product
Raw deviation.
Also, by adjusting the length in the beam scanning space portion, the length and high energy of beam transmission line unit can be made
The length for measuring multistage linear accelerating unit 14 is consistent.
Fig. 7 is the schematic diagram of the major part of one of beam scanner viewed from above.Fig. 8 is the beam from side
The schematic diagram of the major part of one of scanner.Fig. 9 is detachable along the midway path of ion beam line from downstream
Ground is provided with the schematic elevational view of the structure of one of beam scanner.
As shown in Figure 7, Figure 8, beam scanner 134 accommodate in the casing 150, be provided with 1 pair of deflecting electrode 128,130,
Earth electrode 132 near their upstream side and the earth electrode 133 near their downstream.
Set respectively on the upstream side side and downstream side and position corresponding with the opening portion of earth electrode 132,133 of casing 150
It is equipped with the opening portion 152A bigger than the opening portion of upstream side opening portion (omitting diagram), earth electrode 133.
Deflecting electrode and power supply connect through feed through structures to realize.On the other hand, set in the upper surface of casing 150
There are the terminal and earthy terminal for deflecting electrode 128,130 to be connected with power supply.Also, on casing 150, with beam
2 parallel sides of axle are provided with handling and handle easy to carry.In addition, being formed with casing 150 for reducing beam
The vacuum exhaust opening portion of pressure in scanner 134, it is connected with vacuum pumping hardware (not shown).
As shown in figure 9, casing 150 is sliding freely arranged on the beam orientating box 170 being fixedly set on support 160
It is interior.Beam orientating box 170 is sufficiently above casing 150, and 2 guide rails for that can slide casing 150 are equipped with bottom.Lead
Rail extends along the direction orthogonal with beam axis, and the side of the beam orientating box 170 of one side is set as opening and closing by door leaf 172
Freely.Thus, in maintenance, inspection beam scanner 134, casing 150 easily can be taken out from beam orientating box 170.Separately
Outside, in order to pin the casing 150 in push-in beam orientating box 170, the other end of guide rail is provided with locking mechanism (not shown).
The assembly of elements on these scanner peripheries is manipulating object when safeguarding beamline, and upkeep operation can easily exist
Working space R1 is implemented.When carrying out the upkeep operation of high-energy multistage linear accelerating unit 14, similarly can easily it make
Industry space R1 is implemented.
Field parallel lens 84 are configured with beam parallelizer 36.As shown in fig. 6, field parallel lens 84 by
Substantially the multiple acceleration electrode pairs and retarding electrode of hyperbolic shape are to constituting.Each electrode pair is not across producing degree of discharge width
Acceleration/deceleration gaps it is mutually opposing, and the axle for having the acceleration for causing ion beam and deceleration concurrently is formed with acceleration-deceleration gap
Direction composition, and the electricity for becoming by force and being played to ion beam the horizontal composition that lateral convergence is acted on proportional to the distance away from reference axis
.
Across the electrode pair middle and lower reaches side of accelerating gap electrode and deceleration gap upstream side electrode, and deceleration gap
The electrode in downstream and the electrode of upstream side of next accelerating gap form integral structure respectively, so as to these electrodes
Into same current potential.As shown in Fig. 6 (b), these structures also by upper unit and lower unit up and down to group body constitute, and
The spatial portion for setting ion beam to pass through between upper unit and lower unit.
Initial electrode (injection electrode) and last electrode (project electricity from the upstream side of field parallel lens 84
Pole) it is retained as earthing potential.Thus, before and after by parallelizing lens 84, the energy of beam does not change.
In middle electrode assembly, connected in the outlet lateral electrode of accelerating gap and the entrance lateral electrode of deceleration gap
There is type variable to determine the negative supply 90 of voltage, be connected with the outlet lateral electrode of deceleration gap and the entrance lateral electrode of accelerating gap
Type variable determines the positive supply (being born at n sections for negative and positive negative and positive ...) of voltage.Thus, ion beam repeat acceleration/deceleration and gradually to
The direction parallel with the central orbit of beamline.Also, the final direct of travel (beam kept up with the ion beam before deflection scanning
Trajectory direction) parallel track.
Thus, the beam scanned by beam scanner 34 passes through the beam parallelizer including field parallel lens etc.
36, the deflection angle parallel relative to the ion beam direct of travel (beamline orbital direction) before scanning is 0 degree of axle (benchmark
Axle) it is parallel.Now, scanning area is symmetrical on reference axis.
The ion beam come out from field parallel lens 84 delivers to (the AEF (94) of electric field final energy filter 38：
Angular Energy Filter).Carried out in final energy filter 94 and the ion beam before just being injected to chip
The related final analysis of energy, the ionic species of only required energy value is chosen, and is engaged and is carried out neutral with this
The removal for the neutral particle or the different ion of ion valence mumber without valence mumber changed.The final energy filter deflected based on the electric field
94 pass through the deflecting electrode for the tabular being made up of 1 pair of plane or curved surface opposite on the above-below direction of beamline orbital direction
Constitute, and it is downward upwardly through the deflecting action of final energy filter 94 itself with the upper and lower in beamline orbital direction
The ion beam trajectory that side is gradually curved is aligned and bent.
As shown in Fig. 6 (a), Fig. 6 (b), electric field deflection electrode is made up of 1 pair of AEF electrode 104, and is configured to from upper
Lower direction clamps ion beam.In 1 pair of AEF electrode 104, positive voltage is put on to the AEF electrodes 104 of upside respectively, and by negative electricity
Pressure puts on the AEF electrodes 104 of downside.When producing deflection because of electric field, pass through the electric field that is produced between 1 pair of AEF electrode 104
Effect, makes ion beam deflect about 10~20 degree downwards, the only ion beam of target energy is chosen.As shown in Fig. 6 (b),
In angular energy filter device 94, only deflected downwards with set orbit angle by the ion beam of selected valence mumber.Only
The beam being made up of such selected ionic species is irradiated to shone thing i.e. chip 200 with accurate even angle
In.
On the basis of reality deflects high energy beam, as shown in Figure 10, opposite along the vertical direction 1 pair of tabular
Deflecting electrode 204 be set as be engaged with ion beam trajectory and when bending, according to deflection angle and radius of curvature along front and rear n points
Cut, and respective upper electrode and lower electrode remain the plate electrode of same potential respectively, this is making precision and economy
Property aspect it is very excellent.Also, the tabular deflecting electrode split by front and rear n is except upper electrode and lower electrode are remained respectively
Outside the structure of same potential, 1 pair of the plate electrode up and down split as n can also be set as each different current potentials.
By using this structure, Electric field high-energy filter can be carried on the scanning beam transmission line of high-energy.
Beam deflection is made in the direction orthogonal with beam scanning plane by electric field, therefore do not influence the injection ion of beam scanning direction
Density Distribution (uniformity), and energy spectrometer can be carried out.
Moreover, be equipped with final energy filter, thus in this beamline with high-energy multistage linear accelerating unit 14
The linear accelerator of high frequency and U-shaped deflector magnetic field type EFM (energy spectrometer electromagnet 24) and BM (deflection electromagnet
30) 3 kinds of beam filters are equipped with altogether together.It has been observed that the linear accelerator of high frequency is speed (v) filter, EFM and BM are
Momentum (mv) filter, the final energy filter such as its entitled energy (mv2/ 2) filter.Thus, by set-up mode not
Same triple filter device, not only energy purity compared with the past is high, but also can be less very by particle and metallic pollution
Pure ion beam is supplied in chip.
In addition, functionally, EFM can carry out removal and the energy of the energy contamination through the linear accelerator of high frequency with high de-agglomeration
The limitation of width is measured, AEF is so that than relatively low resolution, the beam transmission line unit after the energy spectrometer carried out by EFM is main
Undertake the removing the ion that valence mumber changes because of resist gas leakage of the task.
Final energy filter 94 possesses earth electrode 108 in the upstream side of final energy filter 94, and possesses under
The electrode group that AEF suppresses electrode 110 is provided between 2 earth electrodes for swimming side.The AEF suppress electrode 110 suppress electronics to
Positive electrode is invaded.
Determined and made in the dose cup 122 that earth electrode of most downstream side of final energy filter 94 or so is held using configuration
For dose objective injection when beam electronic current amount.
(processing substrate feed unit)
In Fig. 6 (a), the arrow shown adjacent with chip 200 represents the scanned situation in direction of the beam along these arrows,
In Fig. 6 (b), the arrow shown adjacent with chip 200 represents that direction of the chip 200 along these arrows is moved back and forth and swept by machinery
Situation about retouching.That is, if beam is for example set as along one axially by shuttle-scanning, chip 200 is to pass through driving machine (not shown)
The mode that structure is moved back and forth along the direction at a right angle with above-mentioned one axial direction is driven.
Chip 200 is conveyed to the processing substrate feed unit for being supplied to precalculated position and carrying out the processing based on ion implanting
20 are contained in processing chamber (injection process chamber) 116.Processing chamber 116 is connected with AEF chambers 102.In processing chamber 116
It is configured with energy limitation slit (EDS：Energy Defining Slit)118.The energy limitation limitation of slit 118 have it is used it
Outer energy value and the ion beam of valence mumber pass through, thus only separation with passing through the energy value used by AEF and valence mumber
Ion beam, is configured to the slit grown crosswise along scanning direction for this.Also, energy limits slit 118 to adjust slit separation
Interval, can also be constituted slit body, and cope with the survey of energy spectrometer and implant angle from above-below direction with movable part
Multiple measurement purposes such as amount.Furthermore, it is also possible to which being configured to the movable slit part of switching up and down possesses multiple slit jaws, cutting
Change after these slit jaws, by further making above and below the axle of slit adjust or rotate along the vertical direction, so as to be changed to wish
The slit width of prestige.By the way that these multiple slit jaws are switched over successively according to ionic species, it can also be set as that reduction is handed over
Pitch the structure of pollution.
Low energy electrons are supplied to the ion beam on track according to the beam electronic current amount of ion beam by plasma shower device 120
With the preceding surface of chip 200, and suppress the charging (charge up) of positive charge that is produced by ion implanting.Alternatively, it is also possible to
The left and right end of plasma shower device 120 is configured to determine the dose cup (not shown) of dosage, and configuration is replaced with this most
The dose cup 122 at earth electrode of most downstream side of whole energy filter 94 or so end.
Beam in cross section instrument 124 possesses the beam in cross section instrument cup for carrying out the measure of the beam electronic current on ion implanting position
(omitting diagram).Beam in cross section instrument 124 makes it be moved to horizontal direction before ion implantation on one side, while in beam sweep limits
The interior density of an ion beam for determining ion implanting position.Carry out the result of beam in cross section measure, the anticipation inhomogeneities of ion beam
(PNU：Predicted Non Uniformity) when being unsatisfactory for technological requirement, correction beam scanner 34 applies alive control
Function processed, is automatically adjusted to meet process conditions.Also, it can also be configured on beam in cross section instrument 124 hang down while setting
Straight section cup (Vertical profile cup) (omitting diagram), and beam shape/beam X-Y location is determined, so as to confirm
Beam shape on injection phase, and combine beam width, beam centre position and diverging mask (Divergence Mask) really
Recognize implant angle and beam divergence angle.
It is configured with the most downstream of beamline with can be throughout the ion beam of all wafers area measure sweep limits
Beam electronic current measures the Faraday cup 126 of growing crosswise of function, and is configured to measure final installation beam.Figure 15 is grown crosswise from front
The schematic diagram of Faraday cup.In addition, in order to reduce cross pollution, Faraday cup 126 of growing crosswise can be set as having being capable of basis
The structure of the suitching type bottom surface of the three face structure Faraday cups in 3 faces of ionic species switching prism.Also, also it may be configured as
Growing crosswise on Faraday cup 126 while setting vertical section cup (Vertical profile cup) (omitting diagram), and determine
Beam shape and beam upper-lower position, so as to monitor implant angle and beam-divergence angle in the above-below direction of injection phase
Degree.
It has been observed that as shown in figure 1, in high energy ion injection device 100, each unit is in the way of surrounding working space R1
It is configured to U-shaped.Therefore, the operating personnel in working space R1 can be by minimal movement to entering compared with multiple-unit
Replacing, maintenance and the adjustment of row part.
(considering integral layout, maintainability, productivity, earth environment)
More than, the high energy ion injection device 100 involved by present embodiment passes through high-energy multistage linear accelerating list
First 14 pairs of ion beams generated by ion beam generation unit 12 accelerate, and are turned by the travel direction of beam deflection unit 16
Change, and be irradiated to positioned at being arranged on the substrate of processing substrate feed unit 20 of the end of beam transmission line unit 18.
Also, high energy ion injection device 100 as multiple units include high-energy multistage linear accelerating unit 14 and
Beam transmission line unit 18.Also, high-energy multistage linear accelerating unit 14 and beam transmission line unit 18 are configured to across Fig. 1
Shown working space R1 and it is opposite.Thus, the high-energy multistage straight line of substantially linear is configured in conventional device
Accelerator module 14 and beam transmission line unit 18 are folded back configuration, therefore, it is possible to suppress the total of high energy ion injection device 100
It is long.Also, the radius of curvature of multiple deflection electromagnet of composition beam deflection unit 16 quilt in the way of making device width minimum
Optimize.Thus, minimize the setting area of device, and be sandwiched in high-energy multistage linear accelerating unit 14 and beam
In working space R1 between transmission line unit 18, it can carry out being directed to high-energy multistage linear accelerating unit 14 and beam transmission
The operation of each device of line unit 18.
Also, constituting multiple units of high energy ion injection device 100 includes：Ion beam generation unit 12, it is set
In the upstream side of beamline and generation ion beam；Processing substrate feed unit 20, it is arranged on the downstream of beamline and supply
And handle the substrate for being injected with ion；And beam deflection unit 16, it is arranged at from ion beam generation unit 12 towards substrate
Manage midway and the track of deflection beam line of the beamline of feed unit 20.Also, at ion beam generation unit 12 and substrate
Reason feed unit 20 is configured at the overall side of beamline, and beam deflection unit 16 is configured at into the another of beamline entirety
Side.Thus, it is desirable to the processing substrate feed unit required for the ion gun 10 safeguarded with the short period, the supply of substrate and taking-up
20 is adjacent and configure, therefore the movement of operating personnel less also has no problem.
Also, high-energy multistage linear accelerating unit 14 possesses a series of multiple linear acceleration dresses for the acceleration for carrying out ion
Put, a series of multiple linear accelerators can each have common linking part.Thus, according to the ion institute injected to substrate
The energy needed, can easily change the value volume and range of product of linear accelerator.
Also, the beam scanner 34 as scanner device and the beam parallelizer 36 as parallelizing lens device
There can be the shape of standardization as the linking part with adjacent cells.Thereby, it is possible to easily change linear accelerator
Value volume and range of product.Also, beam scanner 34 and beam parallelizer 36 can be according to the institutes of high-energy multistage linear accelerating unit 14
The structure and quantity of the linear accelerator possessed are selected.
Also, it can also be configured to make in high energy ion injection device 100 framework and vacuum chamber one of each device
Body, and the reference position of alignment device framework or vacuum chamber and assembled, the centering (position thus, it is possible to carry out beam
Adjustment).Thus, numerous and diverse centering operation is changed into Min., can shortening device debug time, can suppress because of job error
The deviation of the axle of generation.Also, the continuous mutual centering of vacuum chamber can also be implemented with module unit.Thus, it is possible to reduce
Working load.And it is possible to which the size of modular device is set as below the size that device is easily moved.Thus, energy
Enough reduce the mobile setting load of module and high energy ion injection device 100.
Also, high energy ion injection device 100 can also will include high-energy multistage linear accelerating unit 14, beam and pass
On the support that the constitution equipment of defeated line unit 18 and exhaust apparatus etc. is assembled into one.Also, high energy ion injection device 100
It is set as on plane basal disc in substantially same level including high-energy multistage linear accelerating unit 14, beam deflection unit 16
And beam transmission line unit 18.Thereby, it is possible to which high energy ion injection device 100 to be fixed on to the plane base of same level
It is adjusted in the state of on disk, and each piece is directly carried, therefore adjustment deviation is seldom produced during transmission, has been saved very
Many troubles adjusted again at the scene.Therefore, it is possible to avoid taking many skilled persons to scene and make them stagnant for a long time
The diseconomy stayed.
If also, make above-mentioned plane basal disc be formed at it is middle and on the base plate of non-stent, can be on plane basal disc only
Carry the said equipment directly related with ion beam trajectory.Moreover, relative to these will be that high frequency is three-dimensional as auxiliary equipment
The parts such as circuit are all assembled in be formed in the space below plane basal disc, so as to improve space availability ratio, can realize more
Small-sized ion implantation apparatus.
Therefore, above-mentioned high energy ion injection device 100 can be also set even in the place that setting place is not had more than needed, and
To make the position that the state that assembling adjustment is carried out in workshop is directly transferred to need, assembled in situ and final tune can be passed through
It is whole and use.Also, high energy ion injection device 100 can realize the resistance to semiconductor in (standing) semiconductor manufacturing workshop
High energy ion injection more than the utilization correct level of process units line.
As above, the layout to each unit and each device is designed, so that high energy ion injection device compared with the past
100 are significantly minimized, and can be contained in the setting length of conventional half or so.Also, involved by present embodiment
Each constitutive requirements are assembled on basal disc by ion implantation apparatus in manufacturing plant, are carried out position adjustment on basal disc and are determined
Be transported to scene is directly carried on transmission vehicle in the state of ion beam trajectory, and on the basis of being installed by support somewhat
Adjust and remove the deviation produced in conveying, it becomes possible to operate device.Therefore, even if not being that skilled person also can be especially light
Pine and implement scene adjustment exactly, and during debugging being shortened.
Also, by taking as longer U-shaped is turned back the layout of type beamline, can realize can be by 5~8MeV of highest height
The ion implantation apparatus that energetic ion is injected with high accuracy.Also, the ion implantation apparatus passes through with central corridor (central area
Domain) the layout, there is sufficient maintenance area with less setting area.Also, when ion implantation apparatus is operated, pass through
Because of the operating using low consumption electric power obtained from field parallel lens, Electric field scanner and electric field AEF etc., it can reduce and disappear
Power consumption power.In other words, the ion implantation apparatus involved by present embodiment, which has, uses electric field gauche form parallelizing lens device
Obtained from scanning beam parallelization mechanism, thus allow for the operating of low consumption electric power.
More than, with reference to above-mentioned embodiment, the present invention is described, but the present invention is not limited to above-mentioned embodiment,
The device that the structure of embodiment is suitably combined and replaced is also contained in the scope of the present invention.Also, can also root
The combination in each embodiment and the order of processing are suitably changed according to the knowledge of those skilled in the art, or to each reality
The mode of applying applies the deformation such as various design alterations, and the scope of the present invention can be also included in by being applied with the embodiment of this deformation
It is interior.
Hereinafter, the different shape of the present invention is enumerated according to embodiment.
Each device at least included by beam transmission line unit is Electric field, therefore above-mentioned high energy ion injection device
Apparatus structure can be simplified and make the low output of power supply.
Figure 16 (a) is to represent outline of the beam-shaping device 32 untill beam scanner 34 from involved by present embodiment
The top view of structure, Figure 16 (b) is represented from the beam-shaping device 32 involved by present embodiment untill beam scanner 34
Schematic configuration side view.
As shown in Figure 16 (a), Figure 16 (b), Electric field beam scanner 34 has 1 couple of deflecting electrode 87a, 87b.Also,
Ground shield 89 is configured with above and below deflecting electrode 87a, 87b.Ground shield 89 prevents subsidiary in beam
Secondary electron moves into the electrode of cocurrent incident beam scanner 34 from outside.If can also be configured to 1 pair of deflecting electrode from outside
Interval between 87a, 87b parallel portion is set to W1, the length of deflecting electrode 87a, 87b direction of beam travel is set to L1,
Then meet L1≥5W1.Also, also may be configured as power supply (amplifier) can be with the arbitrary scan frequency of 0.5kHz~4kHz scopes
Work.And if also constituting the interval between the 1 of no parallel portion pair deflecting electrode 87a, 87b being set to D1, then L is met1
≥5D1。
Generally for making high energy beam fully deflect, it is necessary to make beam over long distances by the inside of higher electric field.For
Producing higher electric field needs using higher voltage or reduces electrode gap.Also, needed to use in beam scanner
The high voltage power supply that voltage can be made to change with 1kHz or so frequency, but this equipment one of high voltage can be exported in power supply
As hardly result in.Accordingly, it would be desirable to the interval of the deflecting electrode reduced in beam scanner.
Deflecting electrode 87a, 87b interval have to be larger than the width of the beam passed through.Thus between the minimum of determining electrode
Every.Also, the length of electrode is determined by beam energy, electric field and the angle deflected.Also, beam energy is determined by device model
It is fixed.Electric field is by above-mentioned conditional decision.Thus, by determining deflected angle come the length of determining electrode.
For example, the interval of the lateral probe movement device electrode in beam scanner involved by present embodiment is set to 60mm or so
(it is assumed that beam dimensions are the pressure-resistant degree having no problem between 40mm, electrode to the maximum), the direction of beam travel of scan electrode
Width is set to 460mm, longer.Also, scanning voltage is ± 30kV or so, scan frequency is 0.5~4kHz or so.
If between may be configured as 1 couple of deflecting electrode 87a, 87b parallel portion with Electric field beam scanner 34
Interval be set to W1, the height of deflecting electrode is set to H1, then H is met1≥1.5W1.For the entirety throughout beam equably
It is scanned, it is necessary to which electric field when scanning is uniform in the vertical direction.Therefore, it is possible to fully high by using the height of electrode
Deflecting electrode makes electric fields uniform.
Deflecting electrode 87a (87b) is rectangular long plate shape, is configured to opposed with another deflecting electrode 87b (87a)
Face is made up of plane or curved surface, and the lateral surface of side opposite with opposed faces is in step difference shape.
Also, deflecting electrode 87a (87b) may be configured as the opposed faces with another deflecting electrode 87b (87a) by two sections of planes
Constitute, and the lateral surface of side opposite with opposed faces is in step difference shape.Thus processability (making) is improved.It can so pass through
Lateral surface is set to simple planar structure and processing charges is reduced.Also, prune more outsides, energy by setting step difference
Enough mitigate component weight, and mitigate when carrying out installation exercise the burden of operating personnel.
Also, deflecting electrode 87a (87b) may be configured as being processed to saw with the opposed faces of another deflecting electrode 87b (87a)
The step difference of dentation.Thereby, it is possible to suppress the generation of metallic pollution.
In addition, as described above, the preferred interval relatively narrower of the deflecting electrode of beam scanner.However, the beam tool scanned
Have width, if therefore electrode gap is excessively narrow, beam can bump against electrode.Therefore, in 1 pair of deflecting electrode, with sweep length
The narrower mode in the gap of the upstream side not expanded also, the linear structure that the shape of upstream side is set to be parallel to each other, and be set to
Downstream towards sweep length expansion is with about ± 5 degree of shapes gradually expanded.Part can be will be enlarged by and be set to curve or ladder
Difference, but the processing of linear structure is simpler and can be with low-cost production.
High energy ion injection device 100 is configured at the beamline downstream of Electric field beam scanner 34, is also equipped with
Ion beam has the upstream side earth electrode 78a and downstream earth electrode 78b of opening by region, and is configured at upstream side
Suppression electrode 74 between earth electrode 78a and downstream earth electrode 78b.
Figure 17 is for illustrating the A/F of downstream earth electrode, suppressing the A/F of electrode and connecing for upstream side
The schematic diagram of magnitude relationship between the A/F of ground electrode.If may be configured as upstream side earth electrode 78a opening
78a1 width is set to W1, the opening 74a1 width that suppresses electrode 74 be set to W2, downstream earth electrode 78b opening 78b1
Width be set to W3, then each electrode meet W1≤W2≤W3.Scanning beam is with towards downstream and horizontal expansion, therefore passes through
It is configured to make suppression electrode 74 and the respective A/F of earth electrode 78a, 78b meet above-mentioned relation, so as to make
The beam of scanning does not bump against each part.
As shown in Figure 16 (a), the deflection angle of Electric field beam scanner 34 can be less than ± 5 °.Thus, direction exists
The incident angle of the Electric field beam parallelizer 36 (referring to Fig. 6) in downstream diminishes, and suppresses the generation of aberration.(beam is parallel for aberration
Change the difference of the center of device and the focal length of end) square proportionally increase with the incident angle.
It is provided between Electric field beam scanner 34 and Electric field beam parallelizer 36 for making Electric field beam
The beam scanning space 96 that the deflection angle of scanner 34 diminishes.Thereby, it is possible to expand Electric field beam scanner 34 and electric field
Interval between formula beam parallelizer 36.Therefore, the deflection angle in Electric field beam scanner 34 is smaller, has swept
The beam retouched also can fully expand before Electric field beam parallelizer 36 is reached.Therefore, it is possible to suppress in Electric field
The aberration of the beam of beam parallelizer 36 simultaneously ensures sufficiently wide sweep limits.
Can possess the vacuum tank 91 for accommodating Electric field beam scanner 34 and being provided with beam scanning space 96, and even
It is connected to vacuum tank 91 and the vavuum pump (not shown) for discharging the gas inside vacuum tank.For example can be in Electric field firing rate
The position of scanner is provided for ensuring that the vortex molecular pump of vacuum, and configures whirlpool in the underface of Electric field beam scanner
Flow pump.Thereby, it is possible to ensure the beamline vacuum of Electric field beam scanner 34.Further, it is possible to will be arrived due to ion collision
Lens stop and electrode near Electric field beam scanner 34 etc. and produce gas leakage effectively discharge.Thus, if it is possible to
Produced gas is removed near generating source as much as possible, then will be tailed off to the gas around spread.Also, if do not have
Unwanted gas, it becomes possible to do not hindered by the gas and pass through beam, therefore the efficiency of transmission of beam can be improved.
Electric field beam parallelizer 36 (referring to Fig. 6) be configured to focus F be located at clip beam scanning space 96 and configure
Region between 1 couple of deflecting electrode 87a, 87b that the Electric field beam scanner 34 of upstream side has.Sweep limits is perseverance
Regularly, the aberration of beam parallelizer and its focal length square are inversely proportional, therefore, it is possible to by setting focal length longer
Beam parallelizer 36 suppress aberration.
Figure 18 is the figure of another for showing schematically beam parallelizer.Electric field parallelizer 136 shown in Figure 18
With multistage parallelizing lens 84a, 84b, 84c.Thereby, it is possible to make the beam gradually parallelization scanned, therefore, it is possible to reduce
Interval between Electric field beam scanner 34 and Electric field parallelizer 136, the length of beam scanning space 96 as escribed above
Degree.Therefore, it is possible to shorten beamline overall length.
As shown in figure 1, high energy ion injection device 100 involved by present embodiment by part 1, part 2 and
Third portion constitutes high energy ion injection beamline, and the part 1 includes the He of beam generating unit 12 with ion gun 10
High-energy multistage linear accelerating unit 14 and with longer track, the part 2 is used for by including beam deflection unit
16 deflector travel direction conversion, the third portion is comprising beam transmission line unit 18 and has longer track, and phase
The device for being opposed to configure part 1 and third portion and constitute the U-shaped with opposite long line part is laid out.
Also, as shown in figure 5, high energy ion injection device 100 is straight in ion beam generation unit 12 and high-energy multistage
Total beam electronic current amount of measure ion beam is provided between line accelerator module 14 in the way of it can insert and keep out of the way to beamline
Injector Faraday cup 80a.
Similarly, between beam deflection unit 16 and beam delivery line unit 18 with can to beamline insert and keep out of the way
Mode be provided with determine ion beam total beam electronic current amount rotary transformer Faraday cup 80b.
Also, as shown in figure 1, high energy ion injection device 100 is also equipped with processing substrate feed unit 20, at the substrate
Reason feed unit 20 is configured at the downstream of beam transmission line unit 18, and the processing that progress is produced by ion implanting.Such as Fig. 6
It is shown, in processing substrate feed unit 20, total beam electronic current amount of measure ion beam is provided with the rear of ion implanting position
Fixed Faraday cup 126 of growing crosswise.
Also, as shown in Fig. 1 etc., high energy ion injection device 100 is configured to extract electrode assembly (extraction by adjusting
Electrode 40：With reference to Fig. 2), adjustment portion (lateral convergence lens 64a, longitudinal convergent lens 64b：With reference to Fig. 5), Electric field high-energy
Beam adjustment portion (orbit adjusting quadrupole lense 26：With reference to Fig. 5) and Electric field beam-shaping device 32 and Electric field beam parallelization
Device 36, generates beam converging and diverging amount homogeneous and the uniform beam of the less directionality of track deviation, and the beam is supplied to
Electric field beam scanner 34, the electrode assembly that extracts includes being arranged at the beam direction adjustment of ion beam generation unit 12
Portion, the adjustment portion is arranged at the terminus inner of high-energy multistage linear accelerating unit 14, to beam direction and converging and diverging
It is adjusted, the Electric field high energy beam adjustment portion is arranged at energy spectrometer unit (beam deflection unit 16：With reference to figure
1), beam transmission line unit 18 has the Electric field beam-shaping device 32 and Electric field beam parallelizer 36.
As shown in figure 16, Electric field beam scanner 34 may be configured as making ion beam inclined to the more lateral of usual sweep limits
Turn, and imported into the left and right either side in the nearby portion for being disposed in Electric field beam parallelizer 36 beam trap portion 95a,
95b, so as to temporarily collect beam.
Also, Electric field beam scanner 34 is configured to, the inclined of left and right deviation for the sweep limits that makes corrections can be applied
Move voltage (being used for the constant voltage that the position for being zero by electric field is moved from the center of left and right).Also, in beam scanner 34, from
Positional deviation when being adjusted to reach chip by the beam of the immediate vicinity of Electric field beam scanner 34 is seized back confiscated property and (turns calculation around)
And offset voltage is determined, it constitutes a part for implant angle/injection phase micro-tensioning system.
In the above-described embodiment, it is illustrated by taking Electric field beam parallelizer as an example, can according to circumstances uses magnetic
Field formula beam parallelizer.
In addition, between method, device, system etc. being combined of phase double replacement above constitutive requirements, the structure of the present invention
It is also effective as the mode of the present invention into important document and the mode of performance.
Claims (20)
1. a kind of high energy ion injection device, it accelerates to the ion beam extracted from ion gun, and is passed along beamline
Defeated to chip and to be injected into the chip, the high energy ion injection device is characterised by possessing：
Beam generating unit, with ion gun and quality analysis apparatus；
High-energy multistage linear accelerating unit, is accelerated to the ion beam and generates high energy ion beam；
The deflection unit of high energy beam, the high energy ion Shu Chaoxiang chips travel direction is changed；
Beam transmission line unit, chip is transferred to by the high energy ion beam deflected；And
Processing substrate feed unit, the high energy ion beam that will be transmitted to is evenly injected into chip,
There is the beam transmission line unit beam-shaping device, high-energy beam scanner, high-energy Electric field beam to put down
Rowization device and high-energy Electric field final energy filter,
And be configured to, the beam scanner and the Electric field are passed through to the high energy ion beam come out from the deflection unit
Beam parallelizer carries out beam scanning and by its parallelization, and passes through high-energy Electric field final energy filter
At least any one different being mixed into after ion is injected into the chip in removal quality, ion valence mumber and energy,
The Electric field beam scanner for the triangular wave work that the beam scanner is set to finely tune,
The Electric field beam scanner is configured to make ion beam deflect to the more lateral of usual sweep limits, and imported into arranging
In the beam trap portion of the left and right either side in the nearby portion of the Electric field beam parallelizer, penetrated so as to temporarily collection
Beam.
2. high energy ion injection device according to claim 1, it is characterised in that
The beam scanner has 1 pair of deflecting electrode, and the interval between 1 pair of deflecting electrode is set into D if consisting of1, will
The length of the direction of beam travel of the deflecting electrode is set to L1, then L is met1≥5D1。
3. high energy ion injection device according to claim 1, it is characterised in that
The Electric field beam scanner has 1 pair of deflecting electrode, and if being configured between the parallel portion of 1 pair of deflecting electrode
Interval be set to W1, the height of the deflecting electrode is set to H1, then H is met1≥1.5W1。
4. high energy ion injection device according to any one of claim 1 to 3, it is characterised in that
The Electric field beam scanner has 1 pair of deflecting electrode, and is configured to the arbitrary scan with 0.5kHz~4kHz
Frequency works.
5. the high energy ion injection device according to Claims 2 or 3, it is characterised in that
The deflecting electrode is made up of with the opposed faces of another deflecting electrode two sections of planes, and side opposite with the opposed faces
Lateral surface is in step difference shape.
6. the high energy ion injection device according to Claims 2 or 3, it is characterised in that
The deflecting electrode is constituted with the opposed faces of another deflecting electrode by processing saw-toothed step difference.
7. high energy ion injection device according to claim 2, it is characterised in that
Earth electrode, the deflecting electrode and the suppression electrode being configured between 2 earth electrodes are configured in ground shield,
And ground shield is configured inside scanner shell, and is configured to prevent electricity by suppressing electrode and ground shield
Subflow enters the deflecting electrode electrode of positive potential.
8. high energy ion injection device according to any one of claim 1 to 3, it is characterised in that be also equipped with：
Upstream side earth electrode and downstream earth electrode, be configured at the Electric field beam scanner beamline downstream and
There is opening by region in ion beam；And
Suppress electrode, be configured between the upstream side earth electrode and the downstream earth electrode,
If the A/F of upstream side earth electrode is set into W1, the A/F for suppressing electrode is set to W2, downstream is grounded
The A/F of electrode is set to W3, then W is met1≤W2≤W3。
9. the high energy ion injection device according to any one of claims 1 to 3,7, it is characterised in that
The deflection angle of the Electric field beam scanner is less than ± 5 °.
10. high energy ion injection device according to claim 9, it is characterised in that
Being provided between the Electric field beam scanner and the Electric field beam parallelizer is used for the Electric field
The beam scanning space that the deflection angle of beam scanner diminishes.
11. high energy ion injection device according to claim 10, it is characterised in that possess：
Vacuum tank, accommodates the Electric field beam scanner and is provided with the beam scanning space；And
Vavuum pump, is connected to the vacuum tank and for the gas for the inside for discharging the vacuum tank.
12. the high energy ion injection device according to any one of claims 1 to 3,7, it is characterised in that
The high energy ion injection device is made up of high energy ion injection beamline part 1, part 2 and third portion,
Wherein, the part 1 includes beam generating unit and the high-energy multistage linear accelerating unit and tool with ion gun
There is longer track；The part 2 is used to change by the deflector travel direction comprising the deflection unit；Described 3rd
Part is comprising the beam transmission line unit and has longer track,
The part 1 and the third portion are configured oppositely and constitute the dress of the U-shaped with opposite long line part
Put layout.
13. high energy ion injection device according to claim 12, it is characterised in that
Between the beam generating unit and the high-energy multistage linear accelerating unit with can to beamline insert and move back
The mode kept away is provided with the 1st Faraday apparatus of the total beam electronic current amount for determining ion beam.
14. the high energy ion injection device according to any one of claims 1 to 3,7, it is characterised in that
Set between the deflection unit and the beam delivery line unit in the way of it can insert and keep out of the way to beamline
There is the 2nd Faraday apparatus of the total beam electronic current amount for determining ion beam.
15. the high energy ion injection device according to any one of claims 1 to 3,7, it is characterised in that
Total beam electronic current amount of measure ion beam is provided with the processing substrate feed unit at the rear of ion implanting position
Fixed 3rd Faraday apparatus.
16. the high energy ion injection device according to claims 1 to 3,7 any one, it is characterised in that
The high energy ion injection device is configured to extract electrode assembly, adjustment portion, power dissipation adjusting apparatus by adjusting
With central orbit compensating device and high-energy Electric field beam-shaping device, generation beam dimensions are below 40mm and almost
There is no the beam of track deviation, and the beam be supplied to the Electric field beam scanner,
The electrode assembly that extracts includes being arranged at the beam direction adjustment portion of the beam generating unit,
The adjustment portion is arranged at the terminus inner of the high-energy multistage linear accelerating unit, and converging and diverging is adjusted,
Electromagnet is deflected, is configured to carry out correction and the energy point of the energy spectrometer, ion implantation angle of high energy ion beam
Scattered suppression,
The beam transmission line unit has the high-energy Electric field beam-shaping device.
17. the high energy ion injection device according to any one of claims 1 to 3,7, it is characterised in that
The deflection unit of the high energy beam includes central orbit compensating device, central orbit compensating device fine setting rail
Road, so that the ion beam projected in the plane of scanning motion identical plane with the Electric field beam scanner from deflection unit leads to
Cross the immediate vicinity of beam scanner.
18. the high energy ion injection device according to any one of claims 1 to 3,7, it is characterised in that
The Electric field beam scanner is configured to apply the offset voltage of the left and right deviation for the sweep limits that makes corrections.
19. high energy ion injection device according to claim 18, it is characterised in that
In the Electric field beam scanner, reach brilliant from the beam being adjusted to by the immediate vicinity of Electric field beam scanner
Positional deviation during piece is seized back confiscated property and determines the offset voltage, and constitutes a part for implant angle/injection phase micro-tensioning system.
20. a kind of high energy ion injection device, it accelerates to the ion beam extracted from ion gun, transmitted along beamline
To chip and it is injected into the chip, high energy ion injection device is characterised by possessing：
Beam generating unit, with ion gun and quality analysis apparatus；
High-energy multistage linear accelerating unit, is accelerated to the ion beam and generates high energy ion beam；
The deflection unit of high energy beam, the high energy ion Shu Chaoxiang chips travel direction is changed；
Beam transmission line unit, chip is transferred to by the high energy ion beam deflected；And
Processing substrate feed unit, the high energy ion beam that will be transmitted to is evenly injected into chip,
There is the beam transmission line unit beam-shaping device, high-energy beam scanner, high-energy magnetic field type beam to put down
Rowization device and high-energy Electric field final energy filter,
And be configured to, the beam scanner and the magnetic field type are passed through to the high energy ion beam come out from the deflection unit
Beam parallelizer carries out beam scanning and by its parallelization, and passes through high-energy Electric field final energy filter
At least any one different being mixed into after ion is injected into the chip in removal quality, ion valence mumber and energy,
The Electric field beam scanner for the triangular wave work that the beam scanner is set to finely tune,
The Electric field beam scanner is configured to make ion beam deflect to the more lateral of usual sweep limits, and imported into arranging
In the beam trap portion of the left and right either side in the nearby portion of the Electric field beam parallelizer, penetrated so as to temporarily collection
Beam.
Applications Claiming Priority (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013111364A JP6053611B2 (en) | 2013-05-27 | 2013-05-27 | High energy ion implanter |
| JP2013-111364 | 2013-05-27 | ||
| JP2013112036A JP6076834B2 (en) | 2013-05-28 | 2013-05-28 | High energy ion implanter |
| JP2013-112036 | 2013-05-28 | ||
| JP2013-113474 | 2013-05-29 | ||
| JP2013113474A JP6086819B2 (en) | 2013-05-29 | 2013-05-29 | High energy ion implanter |
| JP2013125512A JP6045445B2 (en) | 2013-06-14 | 2013-06-14 | High energy ion implanter |
| JP2013-125512 | 2013-06-14 | ||
| JP2013131358A JP6080706B2 (en) | 2013-06-24 | 2013-06-24 | High-frequency acceleration type ion acceleration / transport equipment |
| JP2013-131358 | 2013-06-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104183446A CN104183446A (en) | 2014-12-03 |
| CN104183446B true CN104183446B (en) | 2017-07-18 |
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| CN201410171523.2A Active CN104183446B (en) | 2013-05-27 | 2014-04-25 | High energy ion injection device |
| CN201410172111.0A Active CN104183447B (en) | 2013-05-27 | 2014-04-25 | High energy ion injection device |
| CN201410171492.0A Active CN104183469B (en) | 2013-05-27 | 2014-04-25 | High energy ion injection device |
| CN201410181511.8A Active CN104183448B (en) | 2013-05-27 | 2014-04-30 | High frequency accelerating type ion acceleration/transmitting device of high energy accuracy of measurement |
| CN201410183419.5A Active CN104183449B (en) | 2013-05-27 | 2014-04-30 | High energy ion injection device |
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| CN201410171492.0A Active CN104183469B (en) | 2013-05-27 | 2014-04-25 | High energy ion injection device |
| CN201410181511.8A Active CN104183448B (en) | 2013-05-27 | 2014-04-30 | High frequency accelerating type ion acceleration/transmitting device of high energy accuracy of measurement |
| CN201410183419.5A Active CN104183449B (en) | 2013-05-27 | 2014-04-30 | High energy ion injection device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP3285264B1 (en) * | 2015-04-15 | 2023-11-29 | Kaneka Corporation | Use of a film as charge conversion film for ion beam |
| CN105005070B (en) * | 2015-06-05 | 2018-02-13 | 北京大学 | The discriminating method and its device of doubtful ion beam after a kind of accelerator analysis magnet |
| JP6588323B2 (en) * | 2015-12-10 | 2019-10-09 | 住友重機械イオンテクノロジー株式会社 | Ion implantation method and ion implantation apparatus |
| CN108024439B (en) * | 2016-11-01 | 2020-12-04 | 北京中科信电子装备有限公司 | Ion RF accelerating structure and ion implanter applying same |
| JP6662549B2 (en) * | 2016-11-21 | 2020-03-11 | 住友重機械イオンテクノロジー株式会社 | Ion implantation method and ion implantation apparatus |
| JP6831245B2 (en) * | 2017-01-06 | 2021-02-17 | 住友重機械イオンテクノロジー株式会社 | Ion implantation method and ion implantation device |
| JP6675789B2 (en) * | 2017-02-27 | 2020-04-01 | 住友重機械イオンテクノロジー株式会社 | Ion implanter |
| WO2019180069A1 (en) * | 2018-03-20 | 2019-09-26 | Adam S.A. | Improving safety around a linear accelerator |
| US11164722B2 (en) * | 2018-07-31 | 2021-11-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ion implantation method |
| CN110618443B (en) * | 2019-08-26 | 2021-04-13 | 北京控制工程研究所 | Plasma thruster steady-state ion flow field measuring device and measuring method |
| CN113466921B (en) * | 2021-07-01 | 2023-07-28 | 兰州空间技术物理研究所 | Electrostatic field ion energy analyzer suitable for plume diagnosis of electric thruster |
| CN116170933B (en) * | 2023-01-09 | 2023-09-05 | 中国科学院近代物理研究所 | Magnetic field device for application type isochronous cyclotron |
| CN117295223B (en) * | 2023-11-27 | 2024-04-05 | 青岛四方思锐智能技术有限公司 | Sectional type radio frequency acceleration system and ion implanter |
| CN117393409B (en) * | 2023-11-27 | 2024-04-05 | 青岛四方思锐智能技术有限公司 | Periodic pulse high-energy ion implanter |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1906728A (en) * | 2003-12-04 | 2007-01-31 | 日新意旺机械股份公司 | Ion beam apparatus |
| CN103854942A (en) * | 2012-12-04 | 2014-06-11 | 斯伊恩股份有限公司 | Ion implantation apparatus |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5300891A (en) * | 1992-05-01 | 1994-04-05 | Genus, Inc. | Ion accelerator |
| JPH10321513A (en) * | 1997-05-16 | 1998-12-04 | Nikon Corp | Electron beam transfer device |
| JP4138946B2 (en) * | 1998-06-11 | 2008-08-27 | 株式会社アルバック | Ion implanter |
| JP3448731B2 (en) * | 1998-06-19 | 2003-09-22 | 住友イートンノバ株式会社 | Ion implanter |
| JP3680274B2 (en) * | 2002-03-27 | 2005-08-10 | 住友イートンノバ株式会社 | Ion beam charge neutralization apparatus and method |
| JP5329050B2 (en) * | 2007-04-20 | 2013-10-30 | 株式会社Ｓｅｎ | Beam processing equipment |
| US8168941B2 (en) * | 2009-01-22 | 2012-05-01 | Axcelis Technologies, Inc. | Ion beam angle calibration and emittance measurement system for ribbon beams |
| US8035080B2 (en) * | 2009-10-30 | 2011-10-11 | Axcelis Technologies, Inc. | Method and system for increasing beam current above a maximum energy for a charge state |
| JP5718169B2 (en) * | 2011-06-14 | 2015-05-13 | 株式会社Ｓｅｎ | Ion implantation apparatus and ion implantation method |
-
2014
- 2014-04-25 CN CN201410171523.2A patent/CN104183446B/en active Active
- 2014-04-25 CN CN201410172111.0A patent/CN104183447B/en active Active
- 2014-04-25 CN CN201410171492.0A patent/CN104183469B/en active Active
- 2014-04-30 CN CN201410181511.8A patent/CN104183448B/en active Active
- 2014-04-30 CN CN201410183419.5A patent/CN104183449B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1906728A (en) * | 2003-12-04 | 2007-01-31 | 日新意旺机械股份公司 | Ion beam apparatus |
| CN103854942A (en) * | 2012-12-04 | 2014-06-11 | 斯伊恩股份有限公司 | Ion implantation apparatus |
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| CN104183448A (en) | 2014-12-03 |
| CN104183446A (en) | 2014-12-03 |
| CN104183469A (en) | 2014-12-03 |
| CN104183469B (en) | 2018-06-19 |
| CN104183449A (en) | 2014-12-03 |
| CN104183447A (en) | 2014-12-03 |
| CN104183449B (en) | 2017-07-18 |
| CN104183447B (en) | 2018-05-22 |
| CN104183448B (en) | 2017-07-18 |
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