CN104037113A - Air supply apparatus for plasma processing cavity, and de-clamping method - Google Patents
Air supply apparatus for plasma processing cavity, and de-clamping method Download PDFInfo
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- CN104037113A CN104037113A CN201310068405.4A CN201310068405A CN104037113A CN 104037113 A CN104037113 A CN 104037113A CN 201310068405 A CN201310068405 A CN 201310068405A CN 104037113 A CN104037113 A CN 104037113A
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- gas
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- feeder
- process chamber
- electrostatic chuck
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides an air supply apparatus for a plasma processing cavity, and a de-clamping method. The air supply apparatus is arranged below a substrate and comprises: at least one gas channel which is arranged in the pedestal main body for accommodating a first gas; the gas channel is connected with a control device; the downstream part of the control device is connected with a gas supply device which can supply the first gas and conveying the first gas to the gas channel; and each gas channel is provided with a spaying first gas orifice, the first gas in the gas channel can spray the first gas between the bottom surface of a substrate and a static chuck through the spraying first gas orifice, the upstream part of the control device is also connected with a parallel loop, and the loop comprises a current limiting hole and a valve which are connected in parallel. The declamping method is safe and effective and avoids position offset of the substrate during a declamping process due to rapid increase of the first gas in a short period.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of feeder and de-clamping method of plasma process chamber.
Background technology
In field of semiconductor manufacture, semiconductor arts piece need to form predetermined structure, for example plasma process chamber or plasma activated chemical vapour deposition board through a series of operation processing in semiconductor processing system.In order to meet technological requirement, not only need operation processing procedure strictly to control, also can relate to loading and the de-clamping of semiconductor arts piece.The loading of semiconductor arts piece and de-clamping are the committed steps of semiconductor arts piece processing.
Plasma process chamber is carried out in processing procedure process substrate, and substrate is arranged on the electrostatic chuck in chamber.Electrostatic chuck below is provided with a DC electrode, can produce an electrostatic attraction after DC electrode has connected power supply, and substrate is held on electrostatic chuck.After processing procedure finishes, DC electrode disconnection is connected with power supply, then substrate is carried out to de-clamping.
The de-clamping mechanism of prior art comprises two kinds.The first de-clamping mechanism is mainly to adopt elevate a turnable ladder thimble to apply a power to substrate, thereby is lifted disengaging electrostatic chuck.The second de-clamping mechanism is to utilize the first gas to blow substrate, thereby departs from electrostatic chuck.
Wherein, prior art only adopts the mechanism of elevate a turnable ladder thimble de-clamping substrate from electrostatic chuck likely to cause the irreversible damage of substrate.As everyone knows, because substrate is machined by plasma, after machining, substrate especially on the bottom surface of substrate, also can there is electric charge on described substrate.Prior art has disclosed the program that on-chip electric charge is discharged, and in the ideal situation, substrate is carried out to discharge procedures and just can carry out de-clamping to substrate later.But, along with mechanism is aging, substrate is carried out still likely existing on discharge procedures meron residual charge.Described residual charge cause substrate because of and electrostatic chuck between downward suction of generation of static electricity described substrate is drawn on electrostatic chuck.Because the number of elevate a turnable ladder thimble is limited, its can not stepless action in whole substrate back.Therefore, at some position that does not have elevate a turnable ladder thimble to contact of substrate, downward suction is greater than elevate a turnable ladder thimble thrust upwards, and at other positions of substrate due to the direct contact of elevate a turnable ladder thimble, elevate a turnable ladder thimble thrust is upwards greater than downward suction, and described silicon chip can be owing to causing breakage bird caging is stressed.And because the thrust of elevate a turnable ladder thimble is an instantaneous power, it acts on suddenly substrate and likely can cause the unexpected bullet of substrate to leave electrostatic chuck, this likely causes substrate to be subject to the damage of described elastic force.Further, due to the limited space of plasma process system, above-mentioned de-clamping mechanism is only taked limited elevate a turnable ladder thimble, one or more in described limited elevate a turnable ladder thimble may lift because mechanism is aging not exclusively or postpone and even can not lift in actual applications, it may cause further the inclination of substrate or lift not exclusively, thereby causes substrate to contact with plasma treatment substrate and cause damage.
The de-clamping mechanism that prior art adopts the first gas to blow substrate also can produce many problems.Because the first gas is to provide by ejection the first gas the power that substrate is lifted, its dynamics size is to decide by flow and the flow velocity of the first gas.But the flow of gas and flow velocity are difficult to control, and gas is too little is difficult to substrate to lift.If flow and the flow velocity of gas sharply increases in the short time, can produce again an excessive power, by the substrate board that blows off, cause skew, thereby cause damaged substrate.On-chip material drops in chamber, for example, on focusing ring or electrostatic chuck, also can pollute to chamber.
Therefore, need in the industry a kind of can be by reliable substrate and stably from the de-clamping mechanism of electrostatic chuck de-clamping, the present invention is just based on this proposition.
Summary of the invention
For the problems referred to above in background technology, the present invention proposes a kind of feeder and de-clamping method of plasma process chamber.
First aspect present invention provide a kind of for plasma process chamber by the feeder of substrate de-clamping, wherein, in described plasma process chamber, be provided with a base station, described base station comprises electrostatic chuck, described substrate is arranged at electrostatic chuck top, wherein, described feeder is arranged at the below of described substrate, comprising:
At least one gas passage, it is arranged in described base station main body, for holding the first gas;
Described gas passage is connected with a control device;
The downstream of control device is connected with a gas supply device;
Be connected with a gas supply device in described control device downstream, it can provide the first gas, and is conveyed into described gas passage;
Each described gas passage has ejection first gas orifice, and the first gas in described gas passage can spray the first gas by described ejection the first gas orifice between described substrate bottom surface and described electrostatic chuck,
Wherein, be also connected with a shunt circuit in described control device upstream, this loop comprises metering hole in parallel and valve.
Further, between described control device and shunt circuit, be also connected with an aspiration pump, for extracting the first unnecessary gas out feeder.
Further, described the first gas is helium.
Further, described plasma process chamber also comprises several elevate a turnable ladder thimbles, and it is arranged among described base station movably, and described several elevate a turnable ladder thimbles can be promoted to and exceed described electrostatic chuck.
Further, described plasma process chamber also comprises a drive unit, and it can drive described elevate a turnable ladder thimble to move.
Further, described drive unit comprises cylinder or motor.
Further, the aperture of described metering hole is determined according to the first gas flow described in gas passage.
Second aspect present invention provide a kind of for plasma process chamber by the shunt circuit of the feeder of substrate de-clamping, described shunt circuit is positioned at the upstream of control device, it is characterized in that, the shunt circuit of described feeder comprises metering hole in parallel and valve.
Third aspect present invention a kind of for plasma process chamber by the method for substrate de-clamping, wherein, described plasma process chamber comprises the feeder described in claim 1 to 7 any one, wherein, described method comprises the steps:
Step (a), stops inputting process gas, extinguishes radio-frequency (RF) energy;
Step (b), the valve in shutoff control unit and described shunt circuit;
Step (c), promotes elevate a turnable ladder thimble to make described substrate leave electrostatic chuck.
Further, described step (c) also comprises the steps: afterwards
Load described substrate to manipulator, described manipulator transfers out chamber by substrate by the transmission gate that is arranged on chamber sidewall.
De-clamping mechanism provided by the invention can be avoided moving in the offset of de-clamping process meta because the flow of gas and flow velocity sharply increase the substrate causing at short notice, the damage of even upspringing.The present invention has utilized simple structure to realize de-clamping safely and effectively.
Brief description of the drawings
Fig. 1 is the structural representation of the gas supply system for plasma process chamber of prior art;
Fig. 2 is according to the structural representation of the gas supply system for plasma process chamber of a specific embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
Fig. 1 is the structural representation of the gas supply system for plasma process chamber of prior art.As shown in Figure 1, in plasma chamber 100, pass into process gas, process gas is owing to having passed into the radio-frequency (RF) energy generation plasma that is excited, with such as, to being positioned over substrate 101 on electrostatic chuck 102 be correlated with processing procedure, etching and deposition etc.The feeder that prior art provides comprises some gas passages 103, and gas passage 103 is in series with control device 105 and gas supply device 106 further successively.Wherein, feeder 106 is for continuing supply the first gas.Also be provided with a valve 107 in control device 105 upstreams.
Now simply introduce the de-clamping mechanism of prior art.After processing procedure, gas supply device 106 continues supply gas, and control device 105 is opened the path of itself and gas supply device 106.Now, valve 107 is also opened.Thereby gas enters gas passage 103, the top of some gas passages 103 respectively has a shower nozzle, and gas sprays to substrate back 101a by shower nozzle, makes it slowly depart from electrostatic chuck 102 substrate 101 is produced to a power.Because feeder is controlled the opening and closing of gas near a valve 107, likely there is at short notice cataclysm in the flow of its gas and flow velocity, for example become suddenly greatly, the power that puts on so substrate back 101a just becomes very large at short notice, causes basal lamina offset.
For solving the above-mentioned defect of prior art, the present invention is proposed.Fig. 2 is according to the structural representation of the gas supply system for plasma process chamber of a specific embodiment of the present invention.Plasma process chamber 200 has a process chambers (not shown), and process chambers is essentially cylindricality, and process chambers sidewall perpendicular, has the top electrode (not shown) and the bottom electrode that are arranged in parallel in process chambers.Conventionally, the region between top electrode and bottom electrode is processing region 204, this region 204 by formation high-frequency energy to light and to maintain plasma.Above electrostatic chuck 202, place substrate 201 to be processed, this substrate 201 can be the glass plate of waiting to want the semiconductor chip of etching or processing or treating to be processed into flat-panel monitor.Wherein, described electrostatic chuck 202 is for clamping substrate.Reacting gas is input in process chambers from gas source (not shown), one or more radio-frequency power supply (not shown) can be applied to individually on bottom electrode or be applied to respectively on top electrode and bottom electrode simultaneously, in order to radio-frequency power is transported on bottom electrode or top electrode and bottom electrode on, thereby produce large electric field process chambers is inner.Most of electric field lines are comprised in the processing region 204 between top electrode and bottom electrode, and this electric field accelerates the electronics that is present on a small quantity process chambers inside, make it the gas molecule collision with the reacting gas of inputting.These collisions cause the ionization of reacting gas and exciting of plasma, thereby produce plasma in process chambers.The neutral gas molecule of reacting gas has lost electronics in the time standing these highfields, leaves the ion of positively charged.The ion of positively charged accelerates towards bottom electrode direction, is combined with the neutral substance in processed substrate, excites substrate processing, i.e. etching, deposit etc.Certain suitable position in plasma process chamber 200 is provided with exhaust gas region, exhaust gas region and external exhaust apparatus are (not shown, for example vacuum pump pump) be connected, in order to extract the reacting gas of using and bi-product gas out chamber in processing procedure.Wherein, plasma confinement ring (not shown) is arranged at electrostatic chuck 202 peripheries, for by plasma confinement in processing region 204.
As shown in Figure 2, the invention provides a kind of for plasma process chamber by the feeder of substrate de-clamping, wherein, in described plasma process chamber 200, be provided with a base station, described base station comprises electrostatic chuck 202, described substrate 201 is arranged at electrostatic chuck 202 tops, and wherein, described feeder is arranged at the below of described substrate 201.Described feeder comprises at least one gas passage 203, and it is arranged in described base station main body, for holding the first gas.Described gas passage 205 is connected with a control device 205.The downstream of control device 205 is connected with a gas supply device 206, and it can provide the first gas, and is conveyed into described gas passage 203.Each described gas passage 203 has ejection first gas orifice, and it can spray the first gas by the first gas in described gas passage 203 between described substrate bottom surface 201a and described electrostatic chuck 202.
Wherein, be also connected with a shunt circuit in described control device 205 upstreams, this loop comprises metering hole in parallel (orifice) 209 and valve 207.The characteristic of metering hole 209 is, its pressure and flow are directly proportional, and the pressure ratio of its upstream and downstream must be to exceed 2 times.Restriction orifice can be used as flow measuring element and is used for measuring flow, also can be used as restricting element and is used for limited flow rate and reduce pressure.Have certain pressure reduction, the fluid metering hole of flowing through before and after the metering hole, for certain aperture, the flow of the metering hole of flowing through is along with pressure reduction increases and increases.But in the time that pressure reduction exceedes a certain numerical value (being called critical pressure differential), at this moment, no matter how pressure reduction increases, the flow of the metering hole of flowing through will maintain certain numerical value and no longer increase.Current limliting metering hole limits the flow of fluid and reduces pressure according to this principle.Therefore,, no matter how the upstream pressure of metering hole changes, its gas flow rate that flows through metering hole is determined.So just avoid the first gas to occur the situation that flow or flow velocity increase suddenly at short notice.
Particularly, carrying out when de-clamping, valve 207 is closed, and gas supply device 206 continues supply the first gases, control device 205 be open so that gas is introduced among shunt circuit.Because valve 207 is closed, the first gas is mostly by metering hole 209 inflow gas passages 203.Before de-clamping, it is close contact that substrate 204 and electrostatic chuck 202 are seen as, the first gas ceaselessly continues to be supplied between substrate bottom surface 201a and electrostatic chuck 202 by the shower nozzle of gas passage 203, apply a power on substrate 201, can make substrate 201 gently depart from electrostatic chuck 202 through the accumulation of certain hour.Due to the setting of metering hole 209, the first gas can't reach larger flow velocity and flow at short notice, therefore just substrate can not occur and move in the offset of de-clamping process meta, the situation that is even flown even to damage by unexpected bullet.
Further, between described control device 205 and shunt circuit, be also connected with an aspiration pump 208, for extracting the first unnecessary gas out feeder.Particularly, we will regard as between substrate 201 and electrostatic chuck 202 as being that close contact does not have space before de-clamping, but in actual machinery arranges, unavoidably there is tiny space between the two and leak gas, in order to keep air-tightness wherein, gas supply device 106 continues supply gas, and aspiration pump 208 can detach feeder by unnecessary gas.
Further, described the first gas is helium.Helium as refrigerating gas, and is also used as the gas of de-clamping in processing procedure process in de-clamping process.
Further, as shown in Figure 2, described plasma process chamber 200 also comprises several elevate a turnable ladder thimbles 211, it is arranged among described electrostatic chuck 202 movably, after the first gas has been realized de-clamping, described several elevate a turnable ladder thimbles 211 can be promoted to further and exceed described electrostatic chuck 202, exceed electrostatic chuck 202 thereby drive substrate 201 to be promoted to.The transmission window (not shown) that the manipulator (not shown) of originally awaiting orders outward at chamber in processing procedure process arranges by chamber sidewall puts in chamber, and substrate 101 is loaded in wherein, then transfers to outside chamber by transmission window.
Further, described plasma process chamber 200 also comprises a drive unit 210, and it can drive described elevate a turnable ladder thimble 211 to move.Alternatively, described drive unit 211 comprises cylinder or motor.
Further, the aperture of described metering hole 209 is determined according to the first gas flow described in gas passage.We can control by the configuration of different metering hole 209 flow velocity and the flow of the first gas, to control further the power that puts on substrate 201 back sides.
As shown in Figure 2, the present invention also provide a kind of for plasma process chamber 200 by the shunt circuit of the feeder of substrate 201 de-clampings, described shunt circuit is positioned at the upstream of control device 205, it is characterized in that, the shunt circuit of described feeder comprises metering hole in parallel 209 and valve.
The present invention also provide a kind of for plasma process chamber by the method for substrate de-clamping, wherein, as shown in Figure 2, described plasma process chamber 200 comprises previously described feeder, wherein, described method comprises the steps:
Step (a), stops inputting process gas, extinguishes radio-frequency (RF) energy;
Step (b), the valve 207 in shutoff control unit 205 and described shunt circuit;
Step (c), promotes elevate a turnable ladder thimble 211 to make described substrate 201 leave electrostatic chuck 202.
Further, described step (c) also comprises the steps: afterwards
Load described substrate to manipulator, described manipulator transfers out chamber by substrate by the transmission gate that is arranged on chamber sidewall.
The present invention can avoid the first gas in gas service duct sharply to increase at short notice, therefore can not produce in excessive de-clamping, avoid the substrate board that blows off, cause skew, thereby cause damaged substrate, also avoided the on-chip material bringing thus to drop in chamber, for example, on focusing ring or electrostatic chuck, also can pollute to chamber.In addition, the cost of metering hole is low, does not allow perishablely, has therefore also further saved cost.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.Read after foregoing those skilled in the art, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
- One kind for plasma process chamber by the feeder of substrate de-clamping, wherein, in described plasma process chamber, be provided with a base station, described base station comprises electrostatic chuck, described substrate is arranged at electrostatic chuck top, wherein, described feeder is arranged at the below of described substrate, comprising:At least one gas passage, it is arranged in described base station main body, for holding the first gas;Described gas passage is connected with a control device;The downstream of control device is connected with a gas supply device, and it is in order to the first gas to be provided, and is conveyed into described gas passage;Each described gas passage has ejection first gas orifice, and the first gas in described gas passage sprays the first gas by described ejection the first gas orifice between described substrate bottom surface and described electrostatic chuck,Wherein, be also connected with a shunt circuit in described control device upstream, this loop comprises metering hole in parallel and valve.
- 2. feeder according to claim 1, is characterized in that, is also connected with an aspiration pump between described control device and shunt circuit, for extracting the first unnecessary gas out described feeder.
- 3. feeder according to claim 2, is characterized in that, described the first gas is helium.
- 4. feeder according to claim 2, is characterized in that, described plasma process chamber also comprises several elevate a turnable ladder thimbles, and it is arranged among described base station movably, and described several elevate a turnable ladder thimbles exceed described electrostatic chuck in order to be promoted to.
- 5. feeder according to claim 1, is characterized in that, described plasma process chamber also comprises a drive unit, and it is in order to drive described elevate a turnable ladder thimble to move.
- 6. feeder according to claim 5, is characterized in that, described drive unit comprises cylinder or motor.
- 7. feeder according to claim 1, is characterized in that, the aperture of described metering hole is determined according to the first gas flow/flow velocity described in gas passage.
- For plasma process chamber by a shunt circuit for the feeder of substrate de-clamping, described shunt circuit is positioned at the upstream of control device, it is characterized in that, the shunt circuit of described feeder comprises metering hole in parallel and valve.
- For plasma process chamber by a method for substrate de-clamping, wherein, described plasma process chamber comprises the feeder described in claim 1 to 7 any one, wherein, described method comprises the steps:Step (a), stops inputting process gas, extinguishes radio-frequency (RF) energy;Step (b), the valve in shutoff control unit and described shunt circuit;Step (c), promotes elevate a turnable ladder thimble to make described substrate leave electrostatic chuck.
- 10. method according to claim 9, is characterized in that, described step (c) also comprises the steps: afterwardsLoad described substrate to manipulator, described manipulator transfers out chamber by substrate by the transmission gate that is arranged on chamber sidewall.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310068405.4A CN104037113B (en) | 2013-03-04 | 2013-03-04 | The feeder and de-clamping method of plasma process chamber |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310068405.4A CN104037113B (en) | 2013-03-04 | 2013-03-04 | The feeder and de-clamping method of plasma process chamber |
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| CN104037113B CN104037113B (en) | 2018-05-08 |
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Cited By (4)
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| CN106876237A (en) * | 2015-12-10 | 2017-06-20 | 中微半导体设备(上海)有限公司 | A kind of plasma processing apparatus and method for being provided with feedback de-clamping system |
| CN109755163A (en) * | 2017-11-06 | 2019-05-14 | 北京北方华创微电子装备有限公司 | The method of chamber loading and unloading substrate |
| CN110896045A (en) * | 2018-09-12 | 2020-03-20 | 中微半导体设备(上海)股份有限公司 | Lifting thimble assembly, electrostatic chuck and processing device with electrostatic chuck |
| CN114664620A (en) * | 2020-12-23 | 2022-06-24 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and processing method thereof |
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| CN104037113B (en) | 2018-05-08 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |