CN103985948B - A kind of preparation method of low-loss silica probe - Google Patents
A kind of preparation method of low-loss silica probe Download PDFInfo
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- CN103985948B CN103985948B CN201410197039.7A CN201410197039A CN103985948B CN 103985948 B CN103985948 B CN 103985948B CN 201410197039 A CN201410197039 A CN 201410197039A CN 103985948 B CN103985948 B CN 103985948B
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Abstract
The invention discloses a kind of preparation method of low-loss silica probe, it is characterized in that on the quartz substrate of twin polishing, by techniques such as magnetron sputtering, photoetching, plating, etching, scribings, acquisition low-loss, the quartz probe that consistency is good.Quartz probe of the present invention, has the advantage that hardness is high, loss is low, precision is high.The method processing consistency is good, is convenient to mass production, is specially adapted to the application in microwave, millimeter-wave power amplifiers, belong to the key technology realizing hf power module.
Description
Technical field
The invention belongs to and realize low-loss microwave, millimetre-wave circuit key technology area, be specifically related to a kind of preparation method being applicable to low-loss silica probe.
Background technology
Along with the development of electronic product, the operating frequency of module improves constantly.In microwave, millimeter wave module particularly power model, the control of loss is very important.Therefore, be improving performance, in module, the application of low-loss device seems particularly important.
In numerous power model, probe many uses Rogers5880 soft base plate is processed.There is the problems such as fissipation factor is high, processing consistency is poor, assembly difficulty is high, corrosion-resistant due to soft base plate, apply in high-frequency circuit and limited to.Particularly in power model, higher fissipation factor constrains the combined coefficient of module.The probe of the quartz base plate processing now adopted, loss is low, processing consistency is good, has significantly promote combined coefficient.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of low-loss silica probe, for solving above-mentioned technical barrier.
For achieving the above object, the present invention adopts following technical scheme:
A preparation method for low-loss silica probe, is characterized in that comprising the following steps:
(1) organic cleaning fluid is used to clean quartz substrate;
(2) magnetron sputtering is carried out to the quartz substrate after cleaning in step (1), quartz substrate is formed titanium tungsten adhesion layer and gold seeds layer successively;
(3) on gold seeds layer, coating photoresist layer is carried out, afterwards the mask plate with probe patterns is covered on photoresist layer and carry out exposure-processed, remove on whole quartz substrate with the photoresist layer of corresponding section, probe patterns position again, whole quartz substrate forms probe patterns;
(4) electrogilding thickening is carried out to the probe patterns after photoetching in step (3), gold seeds layer is formed layer gold circuit;
(5) photoresist layer remaining on gold seeds layer is removed;
(6) coating photoresist layer is carried out to the whole quartz substrate after process in step (5), then by whole quartz substrate with corresponding section, probe patterns position outside photoresist layer remove;
(7) by whole quartz substrate with corresponding section, probe patterns position outside titanium tungsten adhesion layer and gold seeds layer remove;
(8) photoresist layer remaining on layer gold circuit is removed;
Complete the preparation of low-loss silica probe.
Wherein, in step (1), the length of quartz substrate is 50.8mm, and width is 50.8mm, and thickness is 0.254mm; Quartz substrate twin polishing.
Wherein, in step (2), titanium tungsten adhesion layer thickness is 500 dust ~ 1000 dusts, and gold seeds layer thickness is 2000 dust ~ 3000 dusts.
Wherein, in step (3), photoresist layer thickness is 6 μm ~ 7 μm.
Wherein, in step (4), layer gold circuit thickness is 4 μm ~ 5 μm.
Wherein, the solution that removes photoresist being carried out removing by photoresist layer remaining on gold seeds layer in step (5) is acetone.
Wherein, in step (6), photoresist layer thickness is 3 μm ~ 4 μm.
Wherein, be adopt wet etching to remove titanium tungsten adhesion layer and gold seeds layer in step (7), the etching solution of titanium tungsten adhesion layer is hydrogen peroxide, and the etching solution of gold seeds layer is KI.
Beneficial effect acquired by the present invention is compared with prior art:
Quartz probe of the present invention has the advantage that hardness is high, loss is low, precision is high, is applicable in the application of microwave, millimeter wave module, particularly power amplifier module.
Accompanying drawing explanation
Fig. 1 is quartz probe processing process figure.
Fig. 2 is quartz probe course of processing schematic diagram.
Embodiment
Below, the invention will be further described for composition graphs 1 and Fig. 2.
A preparation method for low-loss silica probe, its processing process as shown in Figure 1, specifically comprises the following steps:
(1) organic cleaning fluid is used to clean quartz substrate.
Be 50.8mm by length, width is 50.8mm, thickness is 0.254mm, the quartz substrate of twin polishing is positioned over and fills in the beaker of acetone, use Ultrasonic Cleaning 5 ~ 10 minutes, then being taken out by quartz substrate to be positioned over contains in spirituous beaker, use Ultrasonic Cleaning 5 ~ 10 minutes, to clean quartz substrate surface contaminants, it is for subsequent use that cleaning terminates rear taking-up.
(2) magnetron sputtering is carried out to the quartz substrate after cleaning in step (1), quartz substrate is formed titanium tungsten adhesion layer and gold seeds layer successively;
Carried out putting into magnetron sputtering apparatus by quartz substrate after cleaning, sputtered titanium tungsten adhesion layer and gold seeds layer successively on quartz substrate, wherein, titanium tungsten adhesion layer thickness is 500 dust ~ 1000 dusts, and gold seeds layer thickness is 2000 dust ~ 3000 dusts.
(3) on gold seeds layer, coating photoresist layer is carried out, afterwards the mask plate with probe patterns is covered on photoresist layer and carry out exposure-processed, remove on whole quartz substrate with the photoresist layer of corresponding section, probe patterns position again, whole quartz substrate forms probe patterns;
Coating photoresist layer is carried out to the quartz substrate after sputtering, photoresist layer thickness is 6 μm ~ 7 μm, then dry 2 minutes ~ 5 minutes at 100 DEG C, afterwards the mask plate with probe patterns is covered on photoresist layer and carry out exposure-processed, quartz substrate after exposure is put into supporting developer solution and is carried out development treatment, remove the photoresist layer with corresponding section, probe patterns position on quartz substrate, form probe patterns.
(4) electrogilding thickening is carried out to the probe patterns after photoetching in step (3), gold seeds layer is formed layer gold circuit;
Probe after photoetching is put into gold plating bath and carries out electrogilding thickening to probe patterns, layer gold circuit thickness is 4 μm ~ 5 μm.
(5) photoresist layer remaining on gold seeds layer is removed;
Quartz substrate after plating is put into acetone to remove photoresist liquid, remove remaining photoresist on gold seeds layer.
(6) coating photoresist layer is carried out to the whole quartz substrate after process in step (5), then by whole quartz substrate with corresponding section, probe patterns position outside photoresist layer remove;
Carry out photoresist coating to the quartz substrate after removing photoresist, photoresist layer thickness is 3 μm ~ 4 μm, after overexposure, development, remove on quartz substrate with corresponding section, probe patterns position outside photoresist layer.
(7) by whole quartz substrate with corresponding section, probe patterns position outside titanium tungsten adhesion layer and gold seeds layer remove;
Quartz substrate after photoetching is put into successively wet etching solution KI and the hydrogen peroxide of gold seeds layer and titanium tungsten adhesion layer, remove on whole quartz substrate with corresponding section, probe patterns position outside gold seeds layer and titanium tungsten adhesion layer.
(8) photoresist layer remaining on layer gold circuit is removed;
Quartz substrate after wet etching is put into acetone soln and removes remaining photoresist.
(9) if preparation has multiple quartz probe on a quartz substrate, then after step (8), also each quartz probe should be split, specifically the form of mechanical scribing can be adopted to split to quartz substrate.
Complete the preparation of low-loss silica probe.
Claims (8)
1. a preparation method for low-loss silica probe, is characterized in that comprising the following steps:
(1) organic cleaning fluid is used to clean quartz substrate;
(2) magnetron sputtering is carried out to the quartz substrate after cleaning in step (1), quartz substrate is formed titanium tungsten adhesion layer and gold seeds layer successively;
(3) on gold seeds layer, coating photoresist layer is carried out, afterwards the mask plate with probe patterns is covered on photoresist layer and carry out exposure-processed, remove on whole quartz substrate with the photoresist layer of corresponding section, probe patterns position again, whole quartz substrate forms probe patterns;
(4) electrogilding thickening is carried out to the probe patterns after photoetching in step (3), gold seeds layer is formed layer gold circuit;
(5) photoresist layer remaining on gold seeds layer is removed;
(6) coating photoresist layer is carried out to the whole quartz substrate after process in step (5), then by whole quartz substrate with corresponding section, probe patterns position outside photoresist layer remove;
(7) by whole quartz substrate with corresponding section, probe patterns position outside titanium tungsten adhesion layer and gold seeds layer remove;
(8) photoresist layer remaining on layer gold circuit is removed;
Complete the preparation of low-loss silica probe.
2. the preparation method of low-loss silica probe according to claim 1, is characterized in that: in step (1), the length of quartz substrate is 50.8mm, and width is 50.8mm, and thickness is 0.254mm; Quartz substrate twin polishing.
3. the preparation method of low-loss silica probe according to claim 1, is characterized in that: in step (2), titanium tungsten adhesion layer thickness is 500 dust ~ 1000 dusts, and gold seeds layer thickness is 2000 dust ~ 3000 dusts.
4. the preparation method of low-loss silica probe according to claim 1, is characterized in that: in step (3), photoresist layer thickness is 6 ~ 7 μm.
5. the preparation method of low-loss silica probe according to claim 1, is characterized in that: in step (4), layer gold circuit thickness is 4 ~ 5 μm.
6. the preparation method of low-loss silica probe according to claim 1, is characterized in that: the solution that removes photoresist being carried out removing by photoresist layer remaining on gold seeds layer in step (5) is acetone.
7. the preparation method of low-loss silica probe according to claim 1, is characterized in that: in step (6), photoresist layer thickness is 3 ~ 4 μm.
8. the preparation method of low-loss silica probe according to claim 1, it is characterized in that: be adopt wet etching to remove titanium tungsten adhesion layer and gold seeds layer in step (7), the etching solution of titanium tungsten adhesion layer is hydrogen peroxide, and the etching solution of gold seeds layer is KI.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108328567B (en) * | 2018-01-08 | 2020-07-14 | 东南大学 | Method for obtaining high-density unequal-height crystal microneedle array |
| CN111847847B (en) * | 2020-07-30 | 2022-05-06 | 保定开拓精密仪器制造有限责任公司 | Preparation method of quartz pendulous reed |
| CN111812366A (en) * | 2020-08-05 | 2020-10-23 | 苏州韬盛电子科技有限公司 | Method for manufacturing wafer test micro probe based on micro electro mechanical system |
| CN118073208B (en) * | 2024-04-16 | 2024-07-19 | 四川九洲电器集团有限责任公司 | Miniaturized preparation method of microwave power amplifier and microwave power amplifier |
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