CN103956387A - Surge protection device - Google Patents
Surge protection device Download PDFInfo
- Publication number
- CN103956387A CN103956387A CN201410207186.8A CN201410207186A CN103956387A CN 103956387 A CN103956387 A CN 103956387A CN 201410207186 A CN201410207186 A CN 201410207186A CN 103956387 A CN103956387 A CN 103956387A
- Authority
- CN
- China
- Prior art keywords
- protective device
- surge protective
- suppression diode
- transient suppression
- discharge tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001052 transient effect Effects 0.000 claims abstract description 65
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 230000001681 protective effect Effects 0.000 claims description 78
- 230000001629 suppression Effects 0.000 claims description 59
- 238000009413 insulation Methods 0.000 claims description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical group C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 230000000452 restraining effect Effects 0.000 abstract 4
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000002457 bidirectional effect Effects 0.000 description 3
- 230000036632 reaction speed Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
The invention discloses a surge protection device which comprises a transient restraining diode and a semiconductor discharge tube. One end of the transient restraining diode is electrically connected with one end of the semiconductor discharge tube. The surge protection device can achieve a dual-direction protection function and has the advantages that breakdown voltage of the transient restraining diode is high in precision, response speed and reliability and low in leak current; the transient restraining diode is connected with the semiconductor discharge tube, junction capacitance of the whole surge protection device is lowered, clamping voltage of the surge protection device is lowered, and performance of the surge protection device is improved.
Description
Technical field
The present invention relates to carrying out surge protection technical field, more particularly, relate to a kind of surge protective device.
Background technology
In modern electronic equipment use procedure, often there will be the situation of surge current and voltage transient, make that electronic equipment is aging and hydraulic performance decline even damages electronic equipment.Therefore surge protective device is installed on the control circuit such as power line, holding wire of connecting electronic equipment is one of important measures of protection electronic equipment.But the performance of existing surge protective device has much room for improvement.
Summary of the invention
In view of this, the invention provides a kind of surge protective device, reduced the junction capacitance of surge protective device, reduced the clamping voltage of surge protective device, improved the performance of surge protective device.
For achieving the above object, the invention provides following technical scheme:
A kind of surge protective device, comprising:
One Transient Suppression Diode; And,
Semiconductor discharge tube, the first end of described Transient Suppression Diode and the first end of described semiconductor discharge tube are electrically connected.
Preferably, described Transient Suppression Diode is unidirectional Transient Suppression Diode;
Wherein, the first end of described unidirectional Transient Suppression Diode and the first end of described semiconductor discharge tube are electrically connected.
Preferably, described Transient Suppression Diode is two-way Transient Suppression Diode;
Wherein, the first end of described two-way Transient Suppression Diode and the first end of described semiconductor discharge tube are electrically connected.
Preferably, also comprise the first electrode and the second electrode;
Wherein, the second end of described the first electrode and described Transient Suppression Diode is electrically connected; The second end of described the second electrode and described semiconductor discharge tube is electrically connected.
Preferably, also comprise insulation crust, described insulation crust is enclosed with described Transient Suppression Diode and described semiconductor discharge tube, and the end of described the first electrode and described the second electrode is positioned at described insulation crust periphery.
Preferably, described insulation crust is insulation resin shell.
Preferably, described insulation crust is epoxy resins insulation shell.
Preferably, described surge protective device is SMD surge protective device.
Preferably, described surge protective device is axial type surge protective device.
Preferably, described the first electrode and described the second electrode are copper electrode.
Compared with prior art, technical scheme provided by the present invention has the following advantages:
Surge protective device provided by the present invention, comprises a Transient Suppression Diode and semiconductor discharge tube, and wherein, one end of Transient Suppression Diode and one end of semiconductor discharge tube are electrically connected.Surge protective device provided by the invention; not only meet the function of bidirectional protective; and surge protective device had both had, and the puncture voltage accuracy of Transient Suppression Diode is high, the advantage such as reaction speed is fast, the high and low leakage current of reliability; and by Transient Suppression Diode is connected to semiconductor discharge tube; also reduce the junction capacitance of whole surge protective device; and reduced the clamping voltage of surge protective device, improve the performance of surge protective device.
Brief description of the drawings
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The structural representation of a kind of surge protective device that Fig. 1 provides for the embodiment of the present application;
The structural representation of the another kind of surge protective device that Fig. 2 provides for the embodiment of the present application.
Embodiment
As described in background, the performance of existing surge protective device has much room for improvement.Inventor studies discovery, causes the reason of this defect to mainly contain the junction capacitance of surge protective device larger.Existing surge protective device is generally Transient Suppression Diode (TVS, Transient Voltage Suppressor), and Transient Suppression Diode has larger junction capacitance, in high-frequency circuit is answered, the surge protective device of larger electric capacity will cause dropout, has limited the application of surge protective device in high-frequency circuit.
Based on this, the invention provides a kind of surge protective device, the problems referred to above that exist to overcome prior art, comprising:
One Transient Suppression Diode; And,
Semiconductor discharge tube, the first end of described Transient Suppression Diode and the first end of described semiconductor discharge tube are electrically connected.
Surge protective device provided by the present invention, comprises a Transient Suppression Diode and semiconductor discharge tube, and wherein, one end of Transient Suppression Diode and one end of semiconductor discharge tube are electrically connected.Surge protective device provided by the invention; not only meet the function of bidirectional protective; and surge protective device had both had, and the puncture voltage accuracy of Transient Suppression Diode is high, the advantage such as reaction speed is fast, the high and low leakage current of reliability; and by Transient Suppression Diode is connected to semiconductor discharge tube; also reduce the junction capacitance of whole surge protective device; and reduced the clamping voltage of surge protective device, improve the performance of surge protective device.
Be more than core concept of the present invention, for above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention be described in detail.
A lot of details are set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization without prejudice to intension of the present invention in the situation that, and therefore the present invention is not subject to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, in the time that the embodiment of the present invention is described in detail in detail; for ease of explanation; represent that the profile of device architecture can disobey general ratio and do local amplification, and described schematic diagram is example, it should not limit the scope of protection of the invention at this.In addition in actual fabrication, should comprise, the three-dimensional space of length, width and the degree of depth.
The present embodiment provides a kind of surge protective device, shown in Fig. 1 and 2, the surge protective device that the embodiment of the present application is provided is elaborated, wherein, the structural representation of a kind of surge protective device that Fig. 1 provides for the embodiment of the present application, the structural representation of the another kind of surge protective device that Fig. 2 provides for the embodiment of the present application.
Surge protective device comprises:
One Transient Suppression Diode 1;
And,
Semiconductor discharge tube (TSS, Thyristor Surge Suppressor) 2, the first end of Transient Suppression Diode and the first end of semiconductor discharge tube are electrically connected.
Concrete, the Transient Suppression Diode 1 that the embodiment of the present application provides can be unidirectional Transient Suppression Diode, wherein, the first end of the first end of unidirectional Transient Suppression Diode and semiconductor discharge tube 2 is electrically connected;
In addition, in other embodiment of the application, Transient Suppression Diode 1 can also be two-way Transient Suppression Diode, and wherein, the first end of the first end of two-way Transient Suppression Diode and semiconductor discharge tube 2 is electrically connected.The application does not do concrete restriction to unidirectional and two-way the choosing of Transient Suppression Diode, need to specifically choose according to actual conditions.
The surge protective device providing in the embodiment of the present application also comprises the first electrode 3 and the second electrode 4, and wherein, the first electrode 3 is electrically connected with the second end of Transient Suppression Diode 1, and the second electrode 4 is electrically connected with the second end of semiconductor discharge tube 2.Wherein, the first electrode and the second electrode are metal electrode, and optional, the first electrode and the second electrode are copper electrode.The second end of the Transient Suppression Diode in surge protective device and semiconductor discharge tube is all electrically connected an electrode, convenient in use with electronic equipment connection, save time.
Further; in order to protect Transient Suppression Diode and the semiconductor discharge tube of surge protective device not damaged; and avoid Transient Suppression Diode and semiconductor discharge tube to leak electricity; the surge protective device that the embodiment of the present application provides also comprises insulation crust 5; insulation crust 5 wraps up Transient Suppression Diode 1 and semiconductor discharge tube 2, and the end of the first electrode 3 and the second electrode 4 is positioned at insulation crust 5 peripheries.Wherein, the end that is positioned at the first electrode of insulation crust periphery is the one end not being connected with Transient Suppression Diode, and the end that is positioned at the second electrode of insulation crust periphery is the one end not being connected with semiconductor discharge tube.
The insulation crust that the embodiment of the present application provides is insulation resin shell, and optional, insulation crust is epoxy resins insulation shell, this is not done to concrete restriction.
Known by foregoing, the surge protective device that the embodiment of the present application provides, first need one end welding of one end of Transient Suppression Diode and semiconductor discharge tube, Transient Suppression Diode and semiconductor discharge tube are electrically connected, make surge protective device that the embodiment of the present application provides not only there is the plurality of advantages of Transient Suppression Diode, and by making Transient Suppression Diode be electrically connected semiconductor discharge tube, reduce junction capacitance and the clamping voltage of surge protective device, improve the performance of surge protective device;
Then weld respectively an electrode at the other end of Transient Suppression Diode and the other end of semiconductor discharge tube, only need, by two electrodes and electronic equipment connection, facilitate surge protective device and electronic equipment connection, saved the time;
Finally adopt insulating material by Transient Suppression Diode and semiconductor discharge tube parcel; protection Transient Suppression Diode and semiconductor discharge tube are not damaged; improve the useful life of surge protective device; but also effectively avoided leaky in Transient Suppression Diode and the semiconductor discharge tube course of work, improve the security performance of surge protective device.
Shown in figure 1, the surge protective device that the embodiment of the present application provides can be SMD surge protective device, uses bent angle mould to cut bent angle moulding at the first electrode and the second electrode.
In addition, shown in figure 2, the surge protective device that the application provides is not limited to SMD surge protective device, and in other embodiment of the application, surge protective device can also be axial type surge protective device.
The surge protective device that the embodiment of the present application provides, comprises a Transient Suppression Diode and semiconductor discharge tube, and wherein, one end of Transient Suppression Diode and one end of semiconductor discharge tube are electrically connected.Surge protective device provided by the invention; not only meet the function of bidirectional protective; and surge protective device had both had, and the puncture voltage accuracy of Transient Suppression Diode is high, the advantage such as reaction speed is fast, the high and low leakage current of reliability; and by Transient Suppression Diode is connected to semiconductor discharge tube; also reduce the junction capacitance of whole surge protective device; and reduced the clamping voltage of surge protective device, improve the performance of surge protective device.
To the above-mentioned explanation of the disclosed embodiments, make professional and technical personnel in the field can realize or use the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiment, General Principle as defined herein can, in the situation that not departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. a surge protective device, is characterized in that, comprising:
One Transient Suppression Diode; And,
Semiconductor discharge tube, the first end of described Transient Suppression Diode and the first end of described semiconductor discharge tube are electrically connected.
2. surge protective device according to claim 1, is characterized in that, described Transient Suppression Diode is unidirectional Transient Suppression Diode;
Wherein, the first end of described unidirectional Transient Suppression Diode and the first end of described semiconductor discharge tube are electrically connected.
3. surge protective device according to claim 1, is characterized in that, described Transient Suppression Diode is two-way Transient Suppression Diode;
Wherein, the first end of described two-way Transient Suppression Diode and the first end of described semiconductor discharge tube are electrically connected.
4. surge protective device according to claim 1, is characterized in that, also comprises the first electrode and the second electrode;
Wherein, the second end of described the first electrode and described Transient Suppression Diode is electrically connected; The second end of described the second electrode and described semiconductor discharge tube is electrically connected.
5. surge protective device according to claim 4, it is characterized in that, also comprise insulation crust, described insulation crust is enclosed with described Transient Suppression Diode and described semiconductor discharge tube, and the end of described the first electrode and described the second electrode is positioned at described insulation crust periphery.
6. surge protective device according to claim 5, is characterized in that, described insulation crust is insulation resin shell.
7. surge protective device according to claim 6, is characterized in that, described insulation crust is epoxy resins insulation shell.
8. surge protective device according to claim 5, is characterized in that, described surge protective device is SMD surge protective device.
9. surge protective device according to claim 5, is characterized in that, described surge protective device is axial type surge protective device.
10. surge protective device according to claim 4, is characterized in that, described the first electrode and described the second electrode are copper electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410207186.8A CN103956387A (en) | 2014-05-15 | 2014-05-15 | Surge protection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410207186.8A CN103956387A (en) | 2014-05-15 | 2014-05-15 | Surge protection device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103956387A true CN103956387A (en) | 2014-07-30 |
Family
ID=51333638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410207186.8A Pending CN103956387A (en) | 2014-05-15 | 2014-05-15 | Surge protection device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103956387A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016041377A1 (en) * | 2014-09-19 | 2016-03-24 | 华为技术有限公司 | Protection apparatus, electronic device and power supply |
| CN107196282A (en) * | 2017-07-14 | 2017-09-22 | 力特半导体（无锡）有限公司 | A kind of Surge Protector |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5352905A (en) * | 1991-11-27 | 1994-10-04 | Shindengen Electric Manufacturing Co., Ltd. | Semiconductor surge suppressor |
| CN101783330A (en) * | 2009-12-22 | 2010-07-21 | 林茂昌 | Chip-type solid discharging tube |
| CN103795045A (en) * | 2012-10-31 | 2014-05-14 | 华为技术有限公司 | Protective device |
| CN204144269U (en) * | 2014-05-15 | 2015-02-04 | 安徽芯旭半导体有限公司 | A kind of surge protective device |
-
2014
- 2014-05-15 CN CN201410207186.8A patent/CN103956387A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5352905A (en) * | 1991-11-27 | 1994-10-04 | Shindengen Electric Manufacturing Co., Ltd. | Semiconductor surge suppressor |
| CN101783330A (en) * | 2009-12-22 | 2010-07-21 | 林茂昌 | Chip-type solid discharging tube |
| CN103795045A (en) * | 2012-10-31 | 2014-05-14 | 华为技术有限公司 | Protective device |
| CN204144269U (en) * | 2014-05-15 | 2015-02-04 | 安徽芯旭半导体有限公司 | A kind of surge protective device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016041377A1 (en) * | 2014-09-19 | 2016-03-24 | 华为技术有限公司 | Protection apparatus, electronic device and power supply |
| CN107196282A (en) * | 2017-07-14 | 2017-09-22 | 力特半导体（无锡）有限公司 | A kind of Surge Protector |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140730 |
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| RJ01 | Rejection of invention patent application after publication |