CN103887282B - A kind of metal electro-migration structure - Google Patents
A kind of metal electro-migration structure Download PDFInfo
- Publication number
- CN103887282B CN103887282B CN201410106505.6A CN201410106505A CN103887282B CN 103887282 B CN103887282 B CN 103887282B CN 201410106505 A CN201410106505 A CN 201410106505A CN 103887282 B CN103887282 B CN 103887282B
- Authority
- CN
- China
- Prior art keywords
- metal
- electro
- migration
- metal level
- interconnection line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of metal electro-migration structure, by using top layer to connect metal level as transition zone, and increase the mode of lower floor's connection metal level, transition metal layer is made not produce transverse current, the electric current so walked toward lower floor in transition metal layer can the shortest due to distance (< 1um), it is difficult to produce electromigration, lower floor connects metal level owing to not limited by interconnection line number simultaneously, enough interconnection line shunt currents can be filled up, and then be prevented effectively from connection metal level stress concentration point occurs, thus reduce electromigration invalidation point and be positioned at the probability connecting metal level.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of metal electro-migration structure.
Background technology
In integrated circuit fabrication, need to test the electric migration performance of different metal layer, test structure such as electromigration
Test structure view in transverse section shown in (Fig. 1): 1 is tested metal level, 2 be interconnection line (as requested, often
End can only have one), 3 for connecting metal level.But in some technique, it is frequently encountered by each layer metal level
Thickness is different, the most sometimes thickness (H) difference of adjacent two layers metal level can reach 3 times the biggest.
At this moment, when to tested metal level apply current stress (I) time, connect metal level born electric current density (J,
J=I/s, s are the cross-sectional area of metal) bigger than the electric current density of tested metal level.
It is currently by increasing the width connecting metal level 3, avoids the generation of this kind of situation, but due to institute
The electric current added all passes through interconnection line 2 and is transmitted to connect on metal level 3, the therefore connection metal level under interconnection line 2
3 are still easy to failpoint 5 occur.Just (electricity of tested metal level moves with the test purpose of this test structure for this
Move performance, failpoint 4) to run counter to, it is necessary to improved structure designs, and improves the accuracy of test result.
Summary of the invention
The invention discloses a kind of metal electro-migration structure, it is characterised in that described metal electro-migration structure includes:
Test metal level, transition metal layer, the first interconnection line, the second interconnection line and attachment structure；Described test metal
The two ends of layer are connected by transition metal layer described in one first interconnection line and respectively, each described transition metal layer
Connect also by the second interconnection line described at least two and an attachment structure.
Above-mentioned metal electro-migration structure, it is characterised in that: described metal electro-migration structure is applied to semiconductor device
In part structure in metal level electro-migration testing structure technique.
Above-mentioned metal electro-migration structure, it is characterised in that: each described attachment structure all includes some connection gold
Belong to layer, and be sequentially overlapped connection by described second interconnection line, so that described some connection metal levels are connected.
Above-mentioned metal electro-migration structure, it is characterised in that: between adjacent two connection metal levels the most at least
Connected by two described second interconnection lines.
Above-mentioned metal electro-migration structure, it is characterised in that: the thickness of each described transition metal layer is less than 1 μ
m。
Above-mentioned metal electro-migration structure, it is characterised in that: described metal electro-migration structure also includes two metal gaskets,
And each described metal gasket is all connected with described test metal level by attachment structure described in, for described
Test metal level carries out electro-migration testing technique.
Above-mentioned metal electro-migration structure, it is characterised in that: each described connection metal level all with described metal gasket
Electrical connection.
In sum, owing to have employed technique scheme, by make top layer connect metal level as transition zone,
And increase lower floor and connect the mode of metal level, make transition metal layer not produce transverse current, so at transition metal
The electric current walked toward lower floor in Ceng is due to distance the shortest (< 1um), theoretical according to metal electro-migration, is difficult to produce electricity
Migrate, and lower floor's connection metal level is not owing to being limited by interconnection line number, can fill up the shunting of enough interconnection lines
Electric current, avoids connecting metal level and stress concentration point occurs, thus reduce electromigration invalidation point and be positioned at connection metal
The probability of layer.
Accompanying drawing explanation
Fig. 1 is electro-migration testing structure view in transverse section；
Fig. 2 is electro-migration testing structure defect schematic diagram；
Fig. 3 is electro-migration testing structure view in transverse section of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawings the detailed description of the invention of the present invention is further described:
A kind of metal electro-migration structure, this metal electro-migration structure includes: test metal level 1, transition metal layer
8, first interconnection line the 2, second interconnection line 6 and attachment structure；The two ends of test metal level 1 are respectively by one
Interconnection line 2 is connected with a transition metal layer 8, and each transition metal layer 8 is also by least two the second interconnection line
6 are connected with an attachment structure, and wherein, the thickness of each transition metal layer 8 is less than 1 μm, and attachment structure is
By some connection metal levels 7 of the second interconnection line 6 series connection, metal electro-migration structure also includes two metal gaskets,
And each metal gasket is all connected with test metal level 1 by an attachment structure, enter for test metal level 1
Row electro-migration testing technique, each connection metal level 7 all electrically connects with metal gasket, if by current distributing to involvement
Connecing on metal level 7, thus reduce stress concentration point and occur in the probability connected on metal level 7, two connect gold
Belong to the number of the second interconnection line 6 between layer 7 more than or equal to 1, equal between two adjacent connection metals 7
Connect at least through two the second interconnection lines 6.
By the way of increasing and connecting metal level 7, make transition metal layer 8 not produce transverse current, so surveying
During examination, the electric current passed through just is split connecting on metal level 7, wherein, in transition metal layer 8 to every layer
The electric current walked toward lower floor is due to distance the shortest (< 1um), theoretical according to metal electro-migration, is difficult to produce electromigration,
Connect metal level 7 to be limited owing to not counted by the second interconnection line 6, enough second interconnection lines 6 points can be filled up
Stream electric current, avoids connecting metal level 7 and stress concentration point occurs, thus reduce electromigration invalidation point and be positioned at connection
The probability of metal level 7.
A kind of metal electro-migration structure being applicable to super-thick top-layer metal technique of the application, is applied to semiconductor device
In structure in metal level electro-migration testing structure technique, preferably can be applicable to more than or equal to 130nm, 90nm,
In 65/55nm, 45/40nm, 32/28nm and the technique less than or equal to the technology nodes such as 22nm.Changed by this
Entering electro-migration testing structure, when adjacent two layers metal layer thickness difference can be avoided excessive, failpoint likely goes out
Connect now the situation of metal level, thus improve the accuracy of test structure.
By explanation and accompanying drawing, give the exemplary embodiments of the ad hoc structure of detailed description of the invention, based on this
Bright spirit, also can make other conversion.Although foregoing invention proposes existing preferred embodiment, but, this
A little contents are not intended as limitation.
For a person skilled in the art, read after described above, various changes and modifications undoubtedly will aobvious and
It is clear to.Therefore, appending claims should regard whole changes of true intention and the scope containing the present invention as
Change and revise.The scope of any and all equivalence and content in Claims scope, be all considered as still belonging to this
In the intention of invention and scope.
Claims (7)
1. a metal electro-migration structure, it is characterised in that described metal electro-migration structure includes:
Test metal level, transition metal layer, the first interconnection line, the second interconnection line and attachment structure；Institute
State the two ends of test metal level respectively by transition metal layer described in one first interconnection line and even
Connecing, each described transition metal layer connects knot also by the second interconnection line described at least two and one
Structure connects；
Wherein, described transition metal layer cuts off to avoid producing horizontal electromigration.
Metal electro-migration structure the most according to claim 1, it is characterised in that: described metal
Electromigration structure is applied in semiconductor device structure in metal level electro-migration testing structure technique.
Metal electro-migration structure the most according to claim 1, it is characterised in that: each described
Attachment structure all includes some connection metal levels, and is sequentially overlapped even by described second interconnection line
Connect, so that described some connection metal levels are connected.
Metal electro-migration structure the most according to claim 3, it is characterised in that: adjacent two
All connecting at least through two described second interconnection lines between individual connection metal level.
Metal electro-migration structure the most according to claim 1, it is characterised in that: each described
The thickness of transition metal layer is less than 1 μm.
Metal electro-migration structure the most according to claim 3, it is characterised in that: described metal
Electromigration structure also includes two metal gaskets, and each described metal gasket is all by connecting knot described in one
Structure is connected with described test metal level, carries out electro-migration testing for described test metal level
Technique.
Metal electro-migration structure the most according to claim 6, it is characterised in that: each described
Connect metal level all to electrically connect with described metal gasket.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410106505.6A CN103887282B (en) | 2014-03-20 | 2014-03-20 | A kind of metal electro-migration structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410106505.6A CN103887282B (en) | 2014-03-20 | 2014-03-20 | A kind of metal electro-migration structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103887282A CN103887282A (en) | 2014-06-25 |
| CN103887282B true CN103887282B (en) | 2016-08-17 |
Family
ID=50956107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410106505.6A Active CN103887282B (en) | 2014-03-20 | 2014-03-20 | A kind of metal electro-migration structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103887282B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449462B (en) * | 2016-11-17 | 2019-11-26 | 上海华力微电子有限公司 | Electro-migration testing structure |
| CN108573890B (en) * | 2018-04-10 | 2021-07-27 | 上海华力微电子有限公司 | Copper metal interconnection electromigration test structure and test method thereof |
| CN111007387A (en) * | 2019-12-07 | 2020-04-14 | 苏州容启传感器科技有限公司 | Test chip and integration method |
| CN111653550B (en) * | 2020-06-29 | 2023-09-29 | 上海华力微电子有限公司 | Electromigration test structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101246859A (en) * | 2007-02-13 | 2008-08-20 | 台湾积体电路制造股份有限公司 | Test structure for seal ring quality monitor |
| CN103094255A (en) * | 2013-02-27 | 2013-05-08 | 上海华力微电子有限公司 | Interconnection electromigration test structure |
| CN103346143A (en) * | 2013-07-03 | 2013-10-09 | 上海华力微电子有限公司 | Test structure for metal layer electromigration |
| CN103456718A (en) * | 2012-06-05 | 2013-12-18 | 中芯国际集成电路制造(上海)有限公司 | Metal interconnecting wire electromigration test structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7851237B2 (en) * | 2007-02-23 | 2010-12-14 | Infineon Technologies Ag | Semiconductor device test structures and methods |
-
2014
- 2014-03-20 CN CN201410106505.6A patent/CN103887282B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101246859A (en) * | 2007-02-13 | 2008-08-20 | 台湾积体电路制造股份有限公司 | Test structure for seal ring quality monitor |
| CN103456718A (en) * | 2012-06-05 | 2013-12-18 | 中芯国际集成电路制造(上海)有限公司 | Metal interconnecting wire electromigration test structure |
| CN103094255A (en) * | 2013-02-27 | 2013-05-08 | 上海华力微电子有限公司 | Interconnection electromigration test structure |
| CN103346143A (en) * | 2013-07-03 | 2013-10-09 | 上海华力微电子有限公司 | Test structure for metal layer electromigration |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103887282A (en) | 2014-06-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103887282B (en) | A kind of metal electro-migration structure | |
| CN102446900B (en) | Electromigration reliability test structure for multilayer of metal interconnected metal wires | |
| CN103955582B (en) | Method of designing integrated circuit based on cell library and its structure | |
| CN203631539U (en) | Through silicon via testing structure | |
| CN205376473U (en) | Electromigration test structure | |
| CN104900629B (en) | A kind of test structure for detecting skew | |
| CN104658940A (en) | Structure for measuring electrical properties of FinFET (fin field-effect transistor) | |
| US9759766B2 (en) | Electromigration test structure for Cu barrier integrity and blech effect evaluations | |
| CN103035619B (en) | A kind of electromigration reliability test structure | |
| CN108447797A (en) | Metal electro-migration test structure and the metal electro-migration test method for using the structure | |
| CN104124235B (en) | Testing structure and testing method implemented by same | |
| CN105097778A (en) | Through hole array test structure for improving detection capability of current ramp test | |
| CN101750563B (en) | Structure for detecting short circuit of through holes or contact holes in semiconductor device | |
| CN201022075Y (en) | Testing structure for electronic migration rate | |
| CN203826374U (en) | Test structure | |
| US20160291084A1 (en) | Via leakage and breakdown testing | |
| CN110071053A (en) | A kind of electro-migration testing structure | |
| CN103367323B (en) | Detect domain structure and detection method | |
| CN212540578U (en) | Test structure | |
| CN107978587B (en) | Metal connecting line constant temperature electromigration test structure | |
| CN203481225U (en) | Electric leakage monitoring structure | |
| TW200942827A (en) | Multi-layer probe group and its manufacturing method | |
| CN203895444U (en) | Contact hole bridging test structure | |
| CN108091636A (en) | Top-level metallic line electro-migration testing structure | |
| CN105226051B (en) | Semi-conductor test structure and conductive plunger and the detection method of active region contact performance |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |