CN103708412B - A kind of micro electro-mechanical system packaging method - Google Patents
A kind of micro electro-mechanical system packaging method Download PDFInfo
- Publication number
- CN103708412B CN103708412B CN201310533362.2A CN201310533362A CN103708412B CN 103708412 B CN103708412 B CN 103708412B CN 201310533362 A CN201310533362 A CN 201310533362A CN 103708412 B CN103708412 B CN 103708412B
- Authority
- CN
- China
- Prior art keywords
- electrostatic bonding
- lix
- bonding
- metal material
- mechanical system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 52
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 8
- 239000007769 metal material Substances 0.000 claims abstract description 13
- 238000013461 design Methods 0.000 claims abstract description 11
- 239000000654 additive Substances 0.000 claims abstract description 7
- 230000000996 additive effect Effects 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000002474 experimental method Methods 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 5
- 238000004458 analytical method Methods 0.000 claims description 3
- 238000005457 optimization Methods 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 claims description 3
- 229910020366 ClO 4 Inorganic materials 0.000 claims description 2
- 229920001940 conductive polymer Polymers 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims description 2
- 238000000611 regression analysis Methods 0.000 claims description 2
- 239000007784 solid electrolyte Substances 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 description 15
- 238000007789 sealing Methods 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000011160 research Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003487 electrochemical reaction Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- SIXOAUAWLZKQKX-UHFFFAOYSA-N carbonic acid;prop-1-ene Chemical compound CC=C.OC(O)=O SIXOAUAWLZKQKX-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 239000011245 gel electrolyte Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Micromachines (AREA)
Abstract
The invention discloses a kind of micro electro-mechanical system packaging method, belong to integrated antenna package technical field.Described method comprises: P (EO) n-LiX and metal material are carried out electrostatic bonding, n=4-60 of described P (EO) n-LiX, X=SCN, N (CF
3sO
2)
2, C1O
4, CF
3sO
3.The present invention, by the design of component and the adjustment of additive, prepares ionic conductive high molecular solid electrolyte material P (EO) n-LiX be applicable to metal material bonding.
Description
Technical field
The present invention relates to integrated antenna package technical field, particularly a kind of micro electro-mechanical system packaging method.
Background technology
The second half in 20th century, along with the development of large scale integrated circuit technology and micro-fabrication technology, the Micro-Electro-Mechanical system manufacturing millimicron size becomes possibility, mechanism and driver thereof, sensor, controller, power supply combine on very little wafer by many micromachines, thus define complete MEMS (MicroE1ectroMechanicalSystem, MEMS).At present, MEMS has become one of great scientific and technical research field of attracting attention in the world, its achievement in research is widely used in the fields such as Aero-Space, automobile, information communication, biotechnology, medical treatment, analyzing and diagnosing, emerge many various micro element systems based on manufacturing MEMS technology, as pressure sensor, flow sensor, strain transducer, inertia motion sensor, micro-actuator, RF switch and biochip etc.
Encapsulation technology is one of important step of complicated MEMS manufacture, directly affects service life and the range of application of MEMS.Current encapsulation technology mainly contains electrostatic bonding, melting bonding and splicing etc.Relative to electrostatic bonding, melting bonding and adhesive bonding technique exist efficiency low, pollute wafer and the shortcoming such as the life-span is short, thus limit their range of application.And electrostatic bonding has advantages such as connecting temperature is low, speed is fast, technique is simple, bond strength is high, good airproof performance, bonding can be carried out when not using any binding agent to functional materials such as metal, silicon chip, pottery (glass), marmems.It connects the electrochemical reaction process that essence is solid interface, under uniform temperature and electric field action, by dissociation and the migration of alkali metal ion in solid electrolyte glass, produce high electric field and strong electrostatic attraction at linkage interface, thus form close contact and electrochemical reaction connection.Polymer solid electrolyte (SolidPolymerElectro1ytes, SPE) is a kind of novel solid electrolyte developed rapidly in recent years.Polymer solid electrolyte (SolidPolymerElectrolytes, SPE) is a kind of novel solid electrolyte developed rapidly in recent years.The research that the electrostatic bonding encapsulation technology of SPE and metal group material is used for the aspects such as microelectronic component, energy device and new light sources device is had important scientific meaning and using value, and the research has caused the concern of more developed country scholar.
In prior art, the method for attachment all relating to macromolecular material and metal by the MEMS that ionic conduction SPE assembles is often polymerization, vacuum vapour deposition, liquid pouring method and bonding method etc.
Realizing in process of the present invention, inventor finds that prior art at least exists following problem:
The method of attachment all relating to macromolecular material and metal by the MEMS that ionic conduction SPE assembles causes: polymer solid electrolyte interface cohesion is loose, surface quality is coarse, electrical conductivity is on the low side, affects device using function; Shorten device lifetime, increase device weight, reduce device mechanical efficiency.
Summary of the invention
In order to solve the problem of prior art, embodiments provide a kind of micro electro-mechanical system packaging.Described technical scheme is as follows:
A kind of micro electro-mechanical system packaging method, it is characterized in that, described method comprises:
P (EO) n-LiX and metal material are carried out electrostatic bonding.
Alternatively, n=4-60 of described P (EO) n-LiX, X=SCN, N (CF
3sO
2)
2, ClO
4, CF
3sO
3.
Alternatively, described method also comprises:
High-voltage pulse electric source device is adopted to carry out electrostatic bonding to described P (EO) n-LiX and metal material.
Alternatively, the exportable direct current of described high-voltage pulse electric source device and pulse square wave two states.
Alternatively, described electrostatic bonding adopts orthogonal experiment and regression analysis, and in conjunction with first principle simulative optimization design result, determine technological parameter, described technological parameter comprises temperature, electric-field intensity, electric current, pressure, reaction time, additive percentage.
Alternatively, finite element software is applied in described electrostatic bonding process, the regularity of distribution of analysis temperature field and stress-strain field.
Alternatively, by setting up ionic conductive polymer and metal electrostatic bonding model in described electrostatic bonding process, design encapsulating structure.
The beneficial effect that the technical scheme that the embodiment of the present invention provides is brought is:
By the design of component and the adjustment of additive, prepare ionic conductive high molecular solid electrolyte material P (EO) n-LiX be applicable to metal material bonding.
Accompanying drawing explanation
Fig. 1 is the relation schematic diagram of the Wire bonding strength that provides of the embodiment of the present invention and clean air pressure;
Fig. 2 is the temperature of node and the relation schematic diagram of weld interval in the Parallel Seam Sealing Technology process chips that provides of the embodiment of the present invention.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearly, below embodiment of the present invention is described further in detail.
Embodiment one
P (EO) n-LiX and metal material are carried out the process of electrostatic bonding, details are as follows:
By the migration mechanism of research Li ion in ionic conductive high molecular solid electrolyte, design is suitable for the composition carrying out ionic conductive high molecular solid electrolyte P (EO) n-LiX encapsulating bonding with metal material, wherein X=SCN, N (CF
3sO
2)
2, C1O
4, CF
3sO
3deng, n=4-60, adopt the adjustment kind of additive and content, the parameters such as research temperature to the Influencing Mechanism of ionic mobility and electrical conductivity and rule, prepare electrical property good be suitable for the ionic conductive high molecular solid electrolyte with the Li series of metal material bonding.
Alternatively, electrostatic bonding for ionic conductive high molecular solid electrolyte and metal designs a kind of high efficiency high-voltage pulse electric source device, the exportable direct current of this design and pulse square wave two states, extend effective duration of peak point current in bonding process, thus improve average current and the bonding rate of bonding process.
Embodiment two
Carry out in the process of electrostatic bonding at P (EO) n-LiX and metal material, mainly adopt orthogonal experiment, choose optimal processing parameter, detailed description of the invention, details are as follows:
1. scheme arrangement
(1) formulate factor and position level table, investigate temperature, voltage, surface roughness, cooling velocity is four factors altogether, and the value of often kind of factor is three.
(2) L is used
9(3
4) table determines experimental condition, then have 4 files and 9 to walk crosswise, 4 arrange most multipotency investigates 4 kinds of factors, often shows three position levels, existing four factors, each point of three position levels, are put into 4 kinds of factors on 4 row respectively, then, according to optimum seeking table, the position level number of each row is changed into the value of factor.At this moment, 9 conditions will tested exactly are walked crosswise for 9.
2. result of the test
Often kind of condition does single test, and each result presses the quality score of bonding effect, and the measured scoring of matter is high, and records the scoring of nine times.
3. calculate and analyze
(1) three score sums of often each level of row factor are calculated.
(2) calculate extreme difference R, to each row, from I, II and III, maximum number subtracts minimum number, equals extreme difference R, and four extreme difference notes are most next line in table, and extreme difference means that greatly the difference that three position levels cause is large, is important factor; Extreme difference is little is unessential factor.
(3) compare and observe;
Relatively four extreme differences, what extreme difference was large is most important factor, and all the other several factors, interact, and can draw temperature, voltage, surface roughness, the optimum value of cooling velocity by observing.
By above orthogonal experiment, the optimal processing parameter of P (EO) n-LiX and metal material electrostatic bonding can be selected.
Wherein, technological parameter includes but not limited to choose temperature, electric-field intensity, electric current, pressure, reaction time, additive percentage etc., and target test function is ionic mobility, Surface bond rate and bonding strength.
The embodiment of the present invention utilizes Large Scale Nonlinear finite element analysis software to simulate the residual stress of test specimen, analyzes residual stress and residual deformation, and measure and the technique that effectively can propose alleviation also propose to improve binding affinity method.
Embodiment three
In the present embodiment, the technical process of MEMS package comprises cleaning, bonding, paster, wire bonding, sealing cap etc.Wherein:
(1) bonding technology is the critical process in MEMS package.It is a kind of process for sealing along with the development of integrated circuit and micromechanics occurs, bonding techniques can be widely used in sensor, actuator, three dimensional integrated circuits and photoelectronic manufacture.Its appearance makes micromechanics Design and manufacture more flexible.
(2) MEMS paster technique common are two kinds, and one is adhesive technology, and one is soldering processes.The kind of glue is a lot, and the selection of Heraeus is very important, the glue of different performance, very large to the performance impact of MEMS.
(3) cleaning procedure and lead key closing process are in microelectronics and MEMS package, and lead key closing process remains the important way realizing chip bonding pad and be connected with outer lead.How to improve Wire bonding strength is the problem that people study always.Because MEMS exists movable part, and usually require to contact with extraneous medium to make this problem seem more important.Pollution is the major reason affecting Wire bonding strength, and the present embodiment have studied the relation of cleaning procedure and Wire bonding strength for this reason.At present, the low-voltage plasma cleaning technique of radio-frequency driven is a kind of clean method of effective, low cost, and it is very large to the effect of raising Wire bonding strength.The successful Application of plasma cleaning technology relies on the optimization of technological parameter, comprises pressure process, plasma power, time and type of process gas.
By experiment, the present embodiment have studied the technological parameter of these keys to the impact of wire bonding Tensile strength.The gold wire bonding linear diameter of experiment is 25pm, sgf should be greater than by standard bond strength, when not cleaning, its average bond strength is 4.7gf, ultrasonic clear after, its average bond strength is 5.1gf, can just meet technological requirement, after with plasma cleaning, its average bond strength brings up to more than 6.6gf, as shown in Figure 1.Obvious gas pressure, when 100120mT or 140-180mT, has good bond strength.Experimentally draw, use Ar plasma, sample is placed on ground pole plate, when RF power is 200-600W, when gas pressure is 100-120mT or 140-180mT, the time of cleaning 10-15min can obtain fine cleaning performance.
(4) sealing cap technical study: to the airtight MEMS of performance application, normal employing air-tight packaging technique.Level Hermetic Package shell has metal shell and ceramic package, and these two kinds of shells can carry out sealing cap with parallel seam sealing machine.The operation principle of parallel welder is a kind of electric resistance welding, and it to contact with metal cover board with two columniform circular electrodes and forms closed-loop path.The high resistant point in whole loop is in electrode and cover plate contact position, and electric current produces amount of heat in contact position, makes it be molten condition, solidify after series of spot welds.Because welding adopts pulse current, therefore solder joint can be mutually overlapping, just defines airtight filling weld seam.In Parallel Seam Sealing Technology, because the temperature of weld is very high, by radiation and the heat be transmitted on chip, the chip temperature made in cavity is raised.Whether this temperature rise has how many, damage can be caused to be the problem that people are concerned about to chip always.For this reason, the present embodiment has carried out sunykatuib analysis for metal shell Finite Element Method.The cover plate of cavity and body of wall are for cutting down, and base plate is CuW, and suppose that the melting welding temperature of cavity cover plate is 1400 DEG C, and environment temperature is 25 DEG C, and the emissivity of cover plate is 1.0.Result of calculation as shown in Figure 2, gives the temperature of a certain node and the relation of weld interval in Parallel Seam Sealing Technology process chips in figure.This shows, the maximum temperature rise in cavity near chip position only has 37 DEG C, adds environment temperature, and the temperature of chip is 62 DEG C.Therefore, Parallel Seam Sealing Technology is reliable, and soldering and sealing process can not impact chip.To be that room-temperature conductivity is lower (be generally 10 to fatal defects due to PEO-salt complex
-6~ 10
-8scm
-1), and electrical conductivity is only 10
-4scm
-1above just have using value.The method improving room-temperature conductivity has two kinds, the first adds a small amount of polar organic solvent in polymeric matrix, as propene carbonate (PC), ethylene carbonate (EC) etc., realize so-called gel electrolyte, but adding of organic solvent not only reduces electrolytical mechanical strength, and add the reactivity of itself and metal lithium electrode.Two of method in PEO electrolyte, adds inorganic filler to improve electrolytical electrical conductivity, and the method can also improve the stability of electrolytical mechanical strength and lithium/electrolyte interface simultaneously.
The method that the embodiment of the present invention provides, by the design of component and the adjustment of additive, prepares ionic conductive high molecular solid electrolyte material P (EO) n-LiX be applicable to metal material bonding.By optimizing bonding technology parameter, controlling the transmission of bonding process intermediate ion and the process of interfacial chemical reaction, obtaining the Interface debond thing with certain stuctures and properties, ensureing bonding quality.
One of ordinary skill in the art will appreciate that all or part of step realizing above-described embodiment can have been come by hardware, the hardware that also can carry out instruction relevant by program completes, described program can be stored in a kind of computer-readable recording medium, the above-mentioned storage medium mentioned can be read-only storage, disk or CD etc.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (1)
1. a micro electro-mechanical system packaging method, is characterized in that, described method comprises:
P (EO) n-LiX and metal material are carried out electrostatic bonding, the n=4-60 of described P (EO) n-LiX, X=SCN, N (CF
3sO
2)
2, ClO
4, CF
3sO
3;
Described method also comprises:
High-voltage pulse electric source device is adopted to carry out electrostatic bonding to described P (EO) n-LiX and metal material;
The exportable direct current of described high-voltage pulse electric source device and pulse square wave two states;
Described electrostatic bonding adopts orthogonal experiment and regression analysis, and in conjunction with first principle simulative optimization design result, determine technological parameter, described technological parameter comprises temperature, electric-field intensity, electric current, pressure, reaction time, additive percentage;
Finite element software is applied, the regularity of distribution of analysis temperature field and stress-strain field in described electrostatic bonding process;
By setting up ionic conductive polymer and metal electrostatic bonding model in described electrostatic bonding process, design encapsulating structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310533362.2A CN103708412B (en) | 2013-10-29 | 2013-10-29 | A kind of micro electro-mechanical system packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310533362.2A CN103708412B (en) | 2013-10-29 | 2013-10-29 | A kind of micro electro-mechanical system packaging method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103708412A CN103708412A (en) | 2014-04-09 |
| CN103708412B true CN103708412B (en) | 2016-01-20 |
Family
ID=50401815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310533362.2A Active CN103708412B (en) | 2013-10-29 | 2013-10-29 | A kind of micro electro-mechanical system packaging method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103708412B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1135267A (en) * | 1994-09-06 | 1996-11-06 | 第一工业制药株式会社 | Solid polyelectrolyte |
| CN1471353A (en) * | 2002-06-26 | 2004-01-28 | Nec������ʽ���� | Printed circuit board its manufacturing method and semiconductor device |
| CN1764861A (en) * | 2003-03-27 | 2006-04-26 | 伊英克公司 | Electro-optic assemblies |
| CN102768903A (en) * | 2012-08-09 | 2012-11-07 | 中国振华（集团）新云电子元器件有限责任公司 | Method for manufacturing high-voltageconducting polymer electrolytic capacitor |
-
2013
- 2013-10-29 CN CN201310533362.2A patent/CN103708412B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1135267A (en) * | 1994-09-06 | 1996-11-06 | 第一工业制药株式会社 | Solid polyelectrolyte |
| CN1471353A (en) * | 2002-06-26 | 2004-01-28 | Nec������ʽ���� | Printed circuit board its manufacturing method and semiconductor device |
| CN1764861A (en) * | 2003-03-27 | 2006-04-26 | 伊英克公司 | Electro-optic assemblies |
| CN102768903A (en) * | 2012-08-09 | 2012-11-07 | 中国振华（集团）新云电子元器件有限责任公司 | Method for manufacturing high-voltageconducting polymer electrolytic capacitor |
Non-Patent Citations (3)
| Title |
|---|
| LiC104.《International Journal of Radiation Applications and Instrumentation. Part C. Radiation Physics and Chemistry》.1992,第40卷(第5期),Pages 365–367. * |
| P. Ferloni, et al.EFFECTS OF GAMMA-RADIATION ON THE POLYMER ELECTROLYTE P(EO)8• * |
| 金属与陶瓷阳极连接高压脉冲电源的设计;梁晋昌等;《机械管理开发》;20070228;第38-40页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103708412A (en) | 2014-04-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105234567B (en) | The automatic Soldering lug machine of solar energy widgets, the second testing agency, detection method | |
| JP2019512446A (en) | Sealing device with transparent laser welding area | |
| CN112846499A (en) | Ultrafast laser welding method and system for glass and metal packaging | |
| EP2225184A2 (en) | Frit-containing pastes for producing sintered frit patterns on glass sheets | |
| CN103723677B (en) | A kind of sensor assembling package system and assembling method for packing | |
| CN106182741B (en) | A kind of ultrasonic precision sealing-in device and method | |
| CN102189684A (en) | Device and method for welding plastic materials in laser transmission manner | |
| CN103252568A (en) | Technique method for filling spot welding stainless steel high-entropy alloy powder and for filling spot welding stainless steel with high-entropy alloy powder | |
| CN106271071B (en) | A kind of laser welding work station | |
| CN103708412B (en) | A kind of micro electro-mechanical system packaging method | |
| CN107329292A (en) | Radium-shine restorative procedure and radium-shine reparation metacoxal plate | |
| CN103145096A (en) | Low-temperature ultrasound anodic bonding method of silicon wafer and glass sheet | |
| CN107481944B (en) | A kind of semiconductor devices hybrid package method | |
| CN106271019A (en) | Flexible-operation module welding process | |
| CN107502921B (en) | A kind of aluminum electrolytic tank laser crust breaker | |
| CN103449359B (en) | Welding method for micron/nano scale conducting materials | |
| CN112687961B (en) | Lithium ion microelectrode battery and preparation method thereof | |
| CN203715270U (en) | Sensor assembling and packaging system | |
| CN104692676A (en) | Electric-field-assisted diffusion bonding device and method for glass tubes and metal plates | |
| CN101537709B (en) | Ultrasonic bonding method with local solubility for activating auxiliary polymer | |
| CN210878081U (en) | Ultrasonic welding device applied to sealing of vapor chamber | |
| CN114147348A (en) | Laser welding method for sealing nail | |
| CN201607223U (en) | Mechanical-type posture monitoring instrument | |
| KR200339861Y1 (en) | Apparatus for heat lamination sealing in battery cover | |
| CN201989321U (en) | Welding device for laser transmission welding plastic material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231228 Address after: 030000, 29th Floor, 28th Floor, Building 4, Zhonghai Huanyu Tianxia, No. 8, Section 1, Jinci Road, Wanbailin District, Taiyuan City, Shanxi Province (settled at No. 2903-5 Zhongzhou Incubator) Patentee after: Shanxi Weibin Technology Co.,Ltd. Address before: 030024 Shanxi province Taiyuan city Berlin District Wan wa flow Road No. 66 Patentee before: TAIYUAN University OF SCIENCE AND TECHNOLOGY |