CN103681293B - Self-alignment duplex pattern method - Google Patents
Self-alignment duplex pattern method Download PDFInfo
- Publication number
- CN103681293B CN103681293B CN201210333003.8A CN201210333003A CN103681293B CN 103681293 B CN103681293 B CN 103681293B CN 201210333003 A CN201210333003 A CN 201210333003A CN 103681293 B CN103681293 B CN 103681293B
- Authority
- CN
- China
- Prior art keywords
- layer
- photoresist layer
- photoresist
- sacrifice
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 93
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 252
- 239000000463 material Substances 0.000 claims abstract description 73
- 238000007711 solidification Methods 0.000 claims abstract description 44
- 230000008023 solidification Effects 0.000 claims abstract description 44
- 238000005530 etching Methods 0.000 claims abstract description 35
- 239000000243 solution Substances 0.000 claims description 33
- 238000005468 ion implantation Methods 0.000 claims description 16
- 238000003384 imaging method Methods 0.000 claims description 14
- 238000001039 wet etching Methods 0.000 claims description 13
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 11
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 238000002791 soaking Methods 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000003960 organic solvent Substances 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 229910015892 BF 4 Inorganic materials 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 abstract description 9
- 238000012545 processing Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 276
- 239000000758 substrate Substances 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000003763 carbonization Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910003481 amorphous carbon Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000003667 anti-reflective effect Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005255 carburizing Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- GHUXAYLZEGLXDA-UHFFFAOYSA-N 8-azido-5-ethyl-6-phenylphenanthridin-5-ium-3-amine;bromide Chemical compound [Br-].C12=CC(N=[N+]=[N-])=CC=C2C2=CC=C(N)C=C2[N+](CC)=C1C1=CC=CC=C1 GHUXAYLZEGLXDA-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical class C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- JTMHCLKNFXDYMG-UHFFFAOYSA-N acetic acid;1-ethoxypropan-2-ol Chemical class CC(O)=O.CCOCC(C)O JTMHCLKNFXDYMG-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000000101 transmission high energy electron diffraction Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
A kind of self-alignment duplex pattern method, comprising: provide material layer to be etched; Described material layer to be etched is formed and sacrifices photoresist layer; The photoresist of top and sidewall in described sacrifice photoresist layer is cured and forms solidification photoresist shell; Etching is carried out back to the solidification photoresist shell at described sacrifice photoresist layer top, until expose uncured inside to sacrifice photoresist layer, is positioned at inner solidification photoresist shell of sacrificing photoresist layer sidewall and forms the first mask pattern; Remove described uncured inside and sacrifice photoresist layer.Owing to not needing to form hard mask layer, decrease processing step, the stress that can not produce because of described hard mask layer impacts the pattern of sacrificing photoresist layer, and described first mask pattern is formed after being removed at the top of solidification photoresist shell, the sidewall of the sacrifice photoresist layer formed by photoetching process is smooth and perpendicular to material surface to be etched, the sidewall profile of the final etched features formed is better.
Description
Technical field
The present invention relates to semiconductor technology, particularly a kind of self-alignment duplex pattern method.
Background technology
In field of semiconductor manufacture, Other substrate materials is used for mask image to be transferred in one or more layers material layer, such as, mask image be transferred in metal level, dielectric layer or Semiconductor substrate.But along with constantly the reducing of characteristic size of semiconductor technology, the mask pattern utilizing photoetching process to form small-feature-size in material layer becomes more and more difficult.
In order to improve the integrated level of semiconductor device, industry has proposed multiple double-pattern technique, and wherein, self-alignment duplex pattern (Self-AlignedDoublePatterning, SADP) technique is one wherein.Fig. 1 to Fig. 6 is a kind of method utilizing self-alignment duplex pattern to etch semiconductor structure for mask of prior art, specifically comprises:
Please refer to Fig. 1, Semiconductor substrate 10 is provided, form material layer 20 to be etched on Semiconductor substrate 10 surface, form bottom anti-reflection layer 40 on described material layer 20 surface to be etched, form photoresist layer 50 on described bottom anti-reflection layer 40 surface;
Please refer to Fig. 2, exposure imaging is carried out to described photoresist layer, formed and sacrifice photoresist layer 55, with described sacrifice photoresist layer 55 for mask, bottom anti-reflection layer is etched, formed and sacrifice bottom anti-reflection layer 45;
Please refer to Fig. 3, form hard mask layer 60 at described material layer 20 to be etched and sacrifice photoresist layer 55 surface;
Please refer to Fig. 4, etching is carried out back to described hard mask layer, until expose the top surface of described material layer to be etched 20 surface and sacrifice photoresist layer 55, form side wall 65 in described sacrifice photoresist layer 55, sacrifice bottom anti-reflection layer 45 sidewall surfaces;
Please refer to Fig. 5, remove described sacrifice photoresist layer and sacrifice bottom anti-reflection layer;
Please refer to Fig. 6, using described side wall 65 as mask, described material layer 20 to be etched is etched.
Manyly please refer to about self-alignment duplex pattern technique the american documentation literature that publication number is US2009/0146322A1.
But inventor finds, the sidewall profile of etched features that material layer to be etched formed is poor to utilize said method to etch, and complex process.
Summary of the invention
The problem that the present invention solves is to provide a kind of self-alignment duplex pattern method, and step is simple and sidewall profile that the is final etched features formed is better.
For solving the problem, technical solution of the present invention provides a kind of self-alignment duplex pattern method, comprising: provide material layer to be etched; Described material layer to be etched is formed and sacrifices photoresist layer; The photoresist of top and sidewall in described sacrifice photoresist layer is cured and forms solidification photoresist shell; Etching is carried out back to the solidification photoresist shell at described sacrifice photoresist layer top, until expose uncured inside to sacrifice photoresist layer, is positioned at the solidification photoresist shell of sacrificing photoresist layer sidewall in described inside and forms the first mask pattern; Remove described uncured inside and sacrifice photoresist layer.
Optionally, described curing process is ion implantation curing process, utilizes described ion implantation curing process the photoresist of sacrificing top and sidewall in photoresist layer to be become solidification photoresist shell.
Optionally, the ion injected in described ion implantation curing process is H, B, BF
2, BF
3, BF
4, P, As, In, C, Ge wherein one or more combination.
Optionally, the dosage range injected in described ion implantation curing process is 10E13atom/cm
2~ 10E16atom/cm
2, the energy range of injection is 1KeV ~ 500KeV, and the angular range of injection is-70 degree ~ 70 degree.
Optionally, the concrete technology carrying out back etching to the solidification photoresist shell at described sacrifice photoresist layer top is reactive ion etching process.
Optionally, the technique removing described uncured inside sacrifice photoresist layer is wet-etching technology.Optionally, the etching solution of described wet etching is the mixed solution dissolving the organic solvent of photoresist or sulfuric acid, hydrogen peroxide, utilizes described etching solution to carry out soaking or remove after spray treatment described inside and sacrifices photoresist layer.
Optionally, described wet etching removes inner technique of sacrificing photoresist layer: first use the acid solution of 20 degrees Celsius ~ 180 degrees Celsius to carry out soaking or spray treatment, remove with aqueous slkali again, wherein said acid solution comprises sulfuric acid, phosphoric acid, hydrofluoric acid, acetic acid, the one of hydrochloric acid or mixture, and described aqueous slkali is Ammonia.
Optionally.The technique removing described uncured inside sacrifice photoresist layer is: sacrifice photoresist layer to described inside and expose, and utilizes developer solution to remove described inside sacrifice photoresist layer.
Optionally, the technique forming described sacrifice photoresist layer comprises: form photoresist layer in described material surface to be etched, carry out exposure imaging to described photoresist layer, formed and sacrifice photoresist layer.
Optionally, the technique forming described sacrifice photoresist layer comprises: form bottom anti-reflection layer in described material surface to be etched, forms photoresist layer, carry out exposure imaging, formed and sacrifice photoresist layer described photoresist layer on described bottom anti-reflection layer surface.
Optionally, the technique forming described sacrifice photoresist layer comprises: on described material layer to be etched, form bottom anti-reflection layer, photoresist layer is formed on described bottom anti-reflection layer surface, exposure imaging is carried out to described photoresist layer, formed and sacrifice photoresist layer, with described sacrifice photoresist layer for mask, described bottom anti-reflection layer is etched, formed and sacrifice bottom anti-reflection layer.
Optionally, the technique forming described sacrifice photoresist layer comprises: on described material layer to be etched, form the bottom anti-reflection layer dissolving in developer solution, photoresist layer is formed on described bottom anti-reflection layer surface, exposure imaging is carried out to described bottom anti-reflection layer and photoresist layer, forms the sacrifice photoresist layer of sacrificing bottom anti-reflection layer and being positioned at described sacrifice bottom anti-reflection layer surface.
Optionally, also comprise, form the second mask layer in described material surface to be etched, described second mask layer is formed and sacrifices photoresist layer.
Optionally, after forming described first mask pattern, with described first mask pattern for mask, described second mask layer is etched, forms the second mask pattern.
Optionally, remove described first mask pattern, with described second mask pattern for mask, described material layer to be etched is etched, form etched features.
Optionally, also comprise, with described first mask pattern for mask, described material layer to be etched is etched, form etched features.
Compared with prior art, the present invention has the following advantages:
The photoresist of top and sidewall in described sacrifice photoresist layer is cured and forms solidification photoresist shell by the embodiment of the present invention, the solidification photoresist shell at described sacrifice photoresist layer top is etched, until expose uncured inside to sacrifice photoresist layer, remove described uncured inside and sacrifice photoresist layer, the solidification photoresist duricrust that photoresist layer sidewall is sacrificed in described inside forms the first mask pattern, follow-uply treats etachable material layer with described first mask pattern for mask and carries out etching formation etched features.Do not need owing to utilizing described method to form hard mask layer, decrease processing step, the stress that can not produce because of described hard mask layer impacts the pattern of sacrificing photoresist layer, and described first mask pattern is formed after being removed at the top of solidification photoresist shell, the sidewall of the sacrifice photoresist layer formed by photoetching process is smooth and perpendicular to material surface to be etched, make the sidewall profile solidifying photoresist shell better, the sidewall profile of the first mask pattern is better, thus makes the sidewall profile of the final etched features formed better.
Further, remove described uncured inside and sacrifice the technique of photoresist layer for exposing described inside sacrifice photoresist layer, utilize developer solution to remove described inside and sacrifice photoresist layer, compatible with existing photoetching process, do not need to expend the wet etching solution having certain risk, cost higher.
Accompanying drawing explanation
Fig. 1 to Fig. 6 is the cross-sectional view of the self-alignment duplex pattern metallization processes of prior art;
Fig. 7 is the schematic flow sheet of the self-alignment duplex pattern method of the embodiment of the present invention;
Fig. 8 to Figure 16 is the cross-sectional view of the self-alignment duplex pattern process of the embodiment of the present invention.
Embodiment
The sidewall profile of etched features that material layer to be etched formed is etched poor owing to utilizing above-mentioned technology, and complex process, inventor finds through research, when forming hard mask layer in described sacrificial material layer and sacrifice photoresist layer surface, described hard mask layer can produce effect of stress to sacrifice photoresist layer.Because the hardness of photoresist layer is little, even if it is also comparatively soft to sacrifice photoresist layer after postexposure bake, the stress that described hard mask layer produces can make to sacrifice photoresist layer distortion, forming section is the trapezoidal sacrifice photoresist layer of class, the sidewall of sacrificing photoresist layer is made to be not orthogonal to material surface to be etched, make the follow-up side wall being formed at described sacrifice photoresist layer sidewall surfaces be not orthogonal to material surface to be etched, the sidewall profile that etachable material layer carries out etching the etched features formed finally is treated in impact.
For this reason, the present invention proposes a kind of self-alignment duplex pattern method, described material layer to be etched is formed and sacrifices photoresist layer, the photoresist of top and sidewall in described sacrifice photoresist layer is cured and forms solidification photoresist shell, the solidification photoresist shell at described sacrifice photoresist layer top is etched, until expose uncured inside to sacrifice photoresist layer, remove described uncured inside and sacrifice photoresist layer, the solidification photoresist duricrust that photoresist layer sidewall is sacrificed in described inside forms the first mask pattern, follow-up with described first mask pattern for mask treat etachable material layer carry out etching formed etched features.Do not need owing to utilizing described method to form hard mask layer, decrease processing step, the stress that can not produce because of described hard mask layer impacts the pattern of sacrificing photoresist layer, and described first mask pattern is formed after being removed at the top of solidification photoresist shell, the sidewall of the sacrifice photoresist layer formed by photoetching process is smooth and perpendicular to material surface to be etched, make the sidewall profile solidifying photoresist shell better, the sidewall profile of the first mask pattern is better, thus makes the sidewall profile of the final etched features formed better.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here to implement with multiple, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention.Therefore the present invention is not by the restriction of following public concrete enforcement.
Please refer to Fig. 7, be the schematic flow sheet of the self-alignment duplex pattern method of the embodiment of the present invention, specifically comprise: step S101, Semiconductor substrate is provided, form material layer to be etched at described semiconductor substrate surface; Step S102, forms the second mask layer in described material surface to be etched; Step S103, forms bottom anti-reflection layer on described second mask layer surface, forms photoresist layer on described bottom anti-reflection layer surface; Step S104, carries out exposure imaging to described photoresist layer, is formed and sacrifices photoresist layer; Step S105, carries out ion implantation to described sacrifice photoresist layer, the photoresist of top and sidewall in described sacrifice photoresist layer is formed solidification photoresist shell; Step S106, carries out back etching at the top of described solidification photoresist shell, until expose uncured inside to sacrifice photoresist layer, be positioned at the solidification photoresist shell of sacrificing photoresist layer sidewall in described inside and form the first mask pattern; Step S107, removes described uncured inside and sacrifices photoresist layer, with described first mask pattern for mask, etch, form the second mask pattern to described bottom anti-reflection layer, the second mask layer; Step S108, removes described first mask pattern, with described second mask pattern for mask, etches described material layer to be etched, forms etched features.
Concrete, please refer to Fig. 8 to Figure 16, is the structural representation of the forming process of the self-alignment duplex pattern of the embodiment of the present invention.
Please refer to Fig. 8, Semiconductor substrate 100 is provided, form material layer 110 to be etched on described Semiconductor substrate 100 surface.
Described Semiconductor substrate 100 is silicon substrate, germanium substrate, silicon-Germanium substrate, silicon-on-insulator substrate (SOI), one wherein such as germanium on insulator (GOI) substrate, glass substrate etc.Described material layer to be etched 110 is wherein one or more such as silicon oxide layer, silicon nitride layer, polysilicon layer, low-K dielectric material, amorphous carbon, metal level.In the present embodiment, described material layer 110 to be etched is metal level, and the material of described metal level is aluminium, utilizes self-alignment duplex pattern to form metal interconnecting wires for mask carries out etching to described metal level.In other embodiments, described material layer to be etched can also be Semiconductor substrate, utilizes self-alignment duplex pattern to etch described Semiconductor substrate as mask.
Please refer to Fig. 9, form the second mask layer 120 on described material layer 110 surface to be etched.
Described second mask layer 120 is single layer structure or multilayer lamination structure, the material of described second mask layer 120 is silica, silicon nitride, carborundum, silicon oxynitride, amorphous carbon, polysilicon, hafnium oxide, titanium oxide, zirconia, titanium nitride, tantalum nitride, titanium wherein one or more, and the technique of described formation second mask layer 120 is chemical vapor deposition method or physical gas-phase deposition.The material of described second mask layer 120 is different from the material of material layer 110 to be etched, both have high etching selection ratio, make the second mask pattern of the second mask layer 120 formation described in later use treat the loss of the second mask pattern when etachable material layer 110 etches less, be conducive to the pattern and the size that control the final etched features formed.And the first mask pattern formed owing to solidifying photoresist shell is the photoresist layer of carbonization, may be poor with the etching selection of material layer to be etched, directly utilize described first mask pattern to treat etachable material layer for mask to carry out etching and can not carry out effective mask, therefore, in the present embodiment, the second mask layer 120 is formed on described material layer 110 surface to be etched, after later use second mask layer 120 forms the second mask pattern, remove the first mask pattern being positioned at its surface, with described second mask pattern for mask, etch described material layer to be etched, be conducive to the pattern and the degree of depth that control the final etched features formed.And in the present embodiment, described second mask layer 120 comprises amorphous carbon layer and is positioned at the silicon oxide layer on described amorphous carbon layer surface, because when dry etch process etches amorphous carbon layer, amorphous carbon layer sidewall profile is better, and described silicon oxide layer is larger with the etching selection of metal level, be conducive to the metal level that etch thicknesses is larger.
Please refer to Figure 10, form bottom anti-reflection layer 130 on described second mask layer 120 surface, form photoresist layer 140 on described bottom anti-reflection layer 130 surface.
Reflected by the interface after photoresist layer between photoresist layer and substrate to prevent the light exposed, make photoresist can not uniform exposure, in the present embodiment, first form bottom anti-reflection layer (BARC) 130 on described second mask layer 120 surface, then form photoresist layer 140 on described bottom anti-reflection layer 130 surface.In other embodiments, also directly photoresist layer can be formed on described second mask layer surface.
In the present embodiment, described bottom anti-reflection layer 130 is organic bottom antireflective layer, such as polyimides etc.In other embodiments, described bottom anti-reflection layer 130 can also be Inorganic bottom antireflective layer, such as silicon nitride, silicon oxynitride etc.
Above-mentioned Inorganic bottom antireflective layer and organic bottom antireflective layer are insoluble to developer solution after exposure technology, in other embodiments, the bottom anti-reflection layer adopted can also be dissolved in developer solution after overexposure, make a step exposure imaging technique form patterned sacrifice bottom anti-reflection layer simultaneously and be positioned at the sacrifice photoresist layer of sacrificing bottom anti-reflection layer surface, saving the technique that a step etching removes bottom anti-reflection layer.
In the present embodiment, the technique forming described Inorganic bottom antireflective layer is chemical vapor deposition method or physical gas-phase deposition, and the technique forming photoresist layer is spin coating technique.
In other embodiments, the technique forming described bottom anti-reflection layer can also be spin coating technique.
In other embodiments, also the second mask layer can not be formed in described material surface to be etched, directly form bottom anti-reflection layer in described material surface to be etched, photoresist layer is formed on described bottom anti-reflection layer surface, and utilize follow-up the first mask pattern be formed on material layer to be etched to be mask, described material layer to be etched is etched.
Please refer to Figure 11, to described photoresist layer 140(with reference to Figure 10) carry out exposure imaging, form patterned sacrifice photoresist layer 145 on described bottom anti-reflection layer 130 surface.
After exposing described photoresist layer 140, utilize the photoresist layer of developer solution to described exposure area to develop, in the present embodiment, described developer solution is tetramethyl ammonium hydroxide solution.In the present embodiment, after forming described patterned sacrifice photoresist layer 145, the photoresist of top and sidewall in described sacrifice photoresist layer is cured and forms solidification photoresist shell.
In other embodiments, after forming described patterned sacrifice photoresist layer, with described patterned sacrifice photoresist layer for mask, described bottom anti-reflection layer is etched, form patterned sacrifice bottom anti-reflection layer, then the photoresist of top and sidewall in described sacrifice photoresist layer is cured formation solidification photoresist shell.
In other embodiments, when described bottom anti-reflection layer is dissolved in developer solution after exposure, exposure imaging is carried out to described photoresist layer, bottom anti-reflection layer, obtain patterned sacrifice bottom anti-reflection layer simultaneously and be positioned at the sacrifice photoresist layer of sacrificing bottom anti-reflection layer surface, then the photoresist of top and sidewall in described sacrifice photoresist layer is cured formation solidification photoresist shell.
Please refer to Figure 12, ion implantation is carried out to described sacrifice photoresist layer 145, the photoresist of top and sidewall in described sacrifice photoresist layer 145 is formed solidification photoresist shell 146, the uncured sacrifice photoresist layer in described inside is formed innerly sacrifices photoresist layer 147.
The design parameter of described ion implantation curing process comprises: the ion of injection is H, B, BF
2, BF
3, BF
4, P, As, In, C, Ge wherein one or more combination, the dosage range of ion implantation is 10E13atom/cm
2~ 10E16atom/cm
2the energy range of ion implantation is 1KeV ~ 500KeV, the angular range injected is-70 degree ~ 70 degree, make not only at the top of sacrificing photoresist layer 145, also form solidification photoresist shell 146 at the sidewall of sacrificing photoresist layer 145, and by controlling the angle of described ion implantation and the energy of injection, the thickness of the solidification photoresist shell being positioned at sidewall can be controlled, thus control the thickness of final the first mask pattern formed.Cross-linking reaction again can be there is in the ion of described injection with photoresist molecule, photoresist is solidified, and heavy dose of ion injected can make the temperature on sacrifice photoresist surface raise, the sacrifice photoresist layer of described ion implantation is dewatered, there is carburizing reagent, generate the carbon of graphite-like or the carbon of diamond-like, thus make the hardness of described solidification photoresist shell 146 be far longer than the hardness of sacrificing photoresist layer, even if the thickness of the first mask pattern of follow-up formation is less, also described first mask pattern can be utilized to etch the second mask layer or material layer to be etched.And described curing reaction makes to sacrifice the solidification photoresist shell that photoresist layer becomes carbonization, hard mask layer is not formed owing to sacrificing photoresist layer surface, described sacrifice photoresist layer can not be out of shape because of the stress of hard mask layer generation, the sidewall flat smooth of described solidification photoresist shell and perpendicular to material surface to be etched, make the sidewall profile of the first mask pattern better, the pattern of the final etched features formed is better.
Please refer to Figure 13, please refer to Figure 12 at described solidification photoresist shell 146() top carry out back etching, until expose uncured inside to sacrifice photoresist layer 147, be positioned at the solidification photoresist shell of sacrificing photoresist layer 147 sidewall in described inside and form the first mask pattern 148.
The technique of carrying out back etching to the top of described solidification photoresist shell 146 is dry etch process, and in the present embodiment, the technique of described time etching is reactive ion etching (RIE) technique, and etching gas is O
2.Utilize after being positioned at the solidification photoresist shell 146 at top described in described time etching technics removal, expose described uncured inside and sacrifice photoresist layer 147, when follow-up after by described inside sacrifice, photoresist layer 147 removes, be positioned at the solidification photoresist shell of sacrificing photoresist layer 147 sidewall in described inside and form the first mask pattern 148, utilize described first mask pattern 148 can treat etachable material layer and carry out mask etching.
Please refer to Figure 14, remove described uncured inside sacrifice photoresist layer 147(and please refer to Figure 13).
In the present embodiment, removing the technique of sacrificing photoresist layer 147 in described inside is wet-etching technology.
The etching solution of described wet etching can for dissolving the organic solvent of photoresist, described organic solvent comprises ketone as acetone, alkanes is as cyclohexane, ester class is as methyl methacrylate, EMA, ethyl lactate, and ethers is as the mixture of one or more of propylene glycol monoethyl ether acetic acid esters.The etching solution of described wet etching can also be the mixed solution of sulfuric acid and hydrogen peroxide, utilizes described etching solution to carry out soaking or remove after spray treatment described inside and sacrifices photoresist layer.Described wet etching removes inner technique of sacrificing photoresist layer: first use the acid solution of 20 degrees Celsius ~ 180 degrees Celsius to soak or remove with aqueous slkali after spraying again, wherein said acid solution comprises sulfuric acid, phosphoric acid, hydrofluoric acid, acetic acid, the one of hydrochloric acid or mixture, and described aqueous slkali is Ammonia.Utilize described wet-etching technology to sacrifice photoresist layer 147 to described inside to remove, retain described first mask pattern 148.Due to the photoresist that described first mask pattern 148 is carbonization, described etching solution can not dissolve, corrode the photoresist of carbonization, thus optionally etches.
In other embodiments, removing the technique of sacrificing photoresist layer in described inside is exposure imaging technique.When described photoresist is positive glue, described sacrifice photoresist layer is the photoresist be not exposed, after time etching exposes uncured inside sacrifice photoresist layer 147, described sacrifice photoresist layer is exposed, described inside is sacrificed the light acid produced because of exposure in photoresist layer and originally crosslinked photoresist point subsolution can be made to be cross-linked, thus inner photoresist layer of sacrificing is dissolved in developer solution.And solidify in photoresist shell due to photoresist molecule generation carburizing reagent, therefore after overexposure, described first mask pattern also can not be dissolved in developer solution, thus realize selective etch, compatible with existing photoetching process, and do not need to expend the wet etching solution having certain risk, cost higher.
When described sacrifice photoresist layer 145(please refer to Figure 12) the shape of overlooking visual angle when being strip, the shape of described first mask pattern 148 is the annular mask pattern of sacrificing photoresist layer 147 around inside.In the present embodiment, because the etched features finally formed is metal interconnecting wires, after removing described inside sacrifice photoresist layer 147, photoresist is utilized to cover the first mask pattern corresponding to strip zone line, expose the first mask pattern that strip two ends are corresponding, with described photoresist for mask removes the first mask pattern corresponding to described strip two ends, described first mask pattern is made to become straight line or the broken line of bar shaped.
Please refer to Figure 15, with described first mask pattern 148 for mask, to described bottom anti-reflection layer 130(with reference to Figure 14), the second mask layer 120(is with reference to Figure 14) carry out dry etching, form the second mask pattern 125.
The first mask pattern 148 due to the formation of solidification photoresist shell is the photoresist layer of carbonization, may be poor with the etching selection of material layer 120 to be etched, directly utilize described first mask pattern 148 to treat etachable material layer 120 for mask to carry out etching and can not carry out effective mask, therefore, in the present embodiment, be after mask forms the second mask pattern 125 in the second mask layer 120 with described first mask pattern 148, remove the first mask pattern 148 being positioned at its surface, with described second mask pattern 125 for mask, etch described material layer to be etched 120, be conducive to the pattern and the degree of depth that control the final etched features formed.
In other embodiments, with described first mask pattern for mask, directly dry etching is carried out to described material layer to be etched, form etched features.
Please refer to Figure 16, remove described first mask pattern 148(with reference to Figure 15) and remaining bottom anti-reflection layer, with described second mask pattern 125 for mask, described material layer 110 to be etched is etched, form the etched features 115 of self-alignment duplex pattern.
In the present embodiment, the technique removing described first mask pattern 155 and remaining bottom anti-reflection layer is cineration technics.The organic substance be made up of elements such as C, O, H, N due to the material of described first mask pattern 155 and bottom anti-reflection layer or the organic substance of carbonization form, and the reacting gas of described cineration technics is O
2or O
3by described oxygen, ozone plasma, and utilize the sacrifice photoresist layer 145 of described oxygen, ozone plasma and carbonization or non-carbonization to react, form the main product such as volatile carbon monoxide, carbon dioxide, water, thus remove described sacrifice photoresist layer 145.In other embodiments, the reacting gas of described cineration technics can also comprise N
2or H
2deng, described N
2or H
2be conducive to improving the ability removed and sacrifice photoresist layer and residual polymer.
Because the width of described etched features 115 determines according to the thickness of the first mask pattern, by controlling power and the implant angle of ion implantation, the thickness of described first mask pattern can be less than the photoetching of existing technique, the minimum dimension of etching technics, make the width of described etched features 115 be less than the width of the figure utilizing photoetching process to be formed, be conducive to the integrated level improving integrated circuit.
To sum up, the embodiment of the present invention is formed on described material layer to be etched sacrifices photoresist layer, the photoresist of top and sidewall in described sacrifice photoresist layer is cured and forms solidification photoresist shell, the solidification photoresist shell at described sacrifice photoresist layer top is etched, until expose uncured inside to sacrifice photoresist layer, remove described uncured inside and sacrifice photoresist layer, the solidification photoresist duricrust that photoresist layer sidewall is sacrificed in described inside forms the first mask pattern, follow-up with described first mask pattern for mask treat etachable material layer carry out etching formed etched features.Do not need owing to utilizing described method to form hard mask layer, decrease processing step, the stress that can not produce because of described hard mask layer impacts the pattern of sacrificing photoresist layer, and described first mask pattern is formed after being removed at the top of solidification photoresist shell, the sidewall of the sacrifice photoresist layer formed by photoetching process is smooth and perpendicular to material surface to be etched, make the sidewall profile solidifying photoresist shell better, the sidewall profile of the first mask pattern is better, thus makes the sidewall profile of the final etched features formed better.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection range of technical solution of the present invention.
Claims (16)
1. a self-alignment duplex pattern method, is characterized in that, comprising:
Material layer to be etched is provided;
Form photoresist layer in described material surface to be etched, exposure imaging is carried out to described photoresist layer, formed and sacrifice photoresist layer;
The photoresist of top and sidewall in described sacrifice photoresist layer is cured and forms solidification photoresist shell;
Etching is carried out back to the solidification photoresist shell at described sacrifice photoresist layer top, until expose uncured inside to sacrifice photoresist layer, is positioned at the solidification photoresist shell of sacrificing photoresist layer sidewall in described inside and forms the first mask pattern;
Remove described uncured inside and sacrifice photoresist layer.
2. self-alignment duplex pattern method as claimed in claim 1, it is characterized in that, described curing process is ion implantation curing process, utilizes described ion implantation curing process the photoresist of sacrificing top and sidewall in photoresist layer to be become solidification photoresist shell.
3. self-alignment duplex pattern method as claimed in claim 2, it is characterized in that, the ion injected in described ion implantation curing process is H, B, BF
2, BF
3, BF
4, P, As, In, C, Ge wherein one or more combination.
4. self-alignment duplex pattern method as claimed in claim 3, it is characterized in that, the dosage range injected in described ion implantation curing process is 10E13atom/cm
2~ 10E16atom/cm
2, the energy range of injection is 1KeV ~ 500KeV, and the angular range of injection is-70 degree ~ 70 degree.
5. self-alignment duplex pattern method as claimed in claim 1, it is characterized in that, carrying out back etching technics to the solidification photoresist shell at described sacrifice photoresist layer top is reactive ion etching process.
6. self-alignment duplex pattern method as claimed in claim 1, is characterized in that, the technique removing described uncured inside sacrifice photoresist layer is wet-etching technology.
7. self-alignment duplex pattern method as claimed in claim 6, it is characterized in that, the etching solution of described wet etching is the mixed solution dissolving the organic solvent of photoresist or sulfuric acid, hydrogen peroxide, utilizes described etching solution to carry out soaking or remove after spray treatment described inside and sacrifices photoresist layer.
8. self-alignment duplex pattern method as claimed in claim 6, it is characterized in that, described wet etching removes inner technique of sacrificing photoresist layer: first carry out soaking or spray treatment with the acid solution of 20 degrees Celsius ~ 180 degrees Celsius, remove with aqueous slkali again, wherein said acid solution comprises sulfuric acid, phosphoric acid, hydrofluoric acid, acetic acid, the one of hydrochloric acid or mixture, and described aqueous slkali is Ammonia.
9. self-alignment duplex pattern method as claimed in claim 1, it is characterized in that, the technique removing described uncured inside sacrifice photoresist layer is: sacrifice photoresist layer to described inside and expose, and utilizes developer solution to remove described inside sacrifice photoresist layer.
10. self-alignment duplex pattern method as claimed in claim 1, it is characterized in that, the technique forming described sacrifice photoresist layer comprises: form bottom anti-reflection layer in described material surface to be etched, photoresist layer is formed on described bottom anti-reflection layer surface, exposure imaging is carried out to described photoresist layer, is formed and sacrifice photoresist layer.
11. self-alignment duplex pattern methods as claimed in claim 1, it is characterized in that, the technique forming described sacrifice photoresist layer comprises: on described material layer to be etched, form bottom anti-reflection layer, photoresist layer is formed on described bottom anti-reflection layer surface, exposure imaging is carried out to described photoresist layer, is formed and sacrifice photoresist layer, with described sacrifice photoresist layer for mask, described bottom anti-reflection layer is etched, is formed and sacrifice bottom anti-reflection layer.
12. self-alignment duplex pattern methods as claimed in claim 1, it is characterized in that, the technique forming described sacrifice photoresist layer comprises: on described material layer to be etched, form the bottom anti-reflection layer dissolving in developer solution, photoresist layer is formed on described bottom anti-reflection layer surface, exposure imaging is carried out to described bottom anti-reflection layer and photoresist layer, forms the sacrifice photoresist layer of sacrificing bottom anti-reflection layer and being positioned at described sacrifice bottom anti-reflection layer surface.
13. self-alignment duplex pattern methods as claimed in claim 1, is characterized in that, also comprise, form the second mask layer in described material surface to be etched, described second mask layer is formed and sacrifices photoresist layer.
14. self-alignment duplex pattern methods as claimed in claim 13, is characterized in that, after forming described first mask pattern, with described first mask pattern for mask, etch, form the second mask pattern to described second mask layer.
15. self-alignment duplex pattern methods as claimed in claim 14, is characterized in that, remove described first mask pattern, with described second mask pattern for mask, etch described material layer to be etched, form etched features.
16. self-alignment duplex pattern methods as claimed in claim 1, is characterized in that, also comprise, and with described first mask pattern for mask, etch described material layer to be etched, form etched features.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210333003.8A CN103681293B (en) | 2012-09-10 | 2012-09-10 | Self-alignment duplex pattern method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210333003.8A CN103681293B (en) | 2012-09-10 | 2012-09-10 | Self-alignment duplex pattern method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103681293A CN103681293A (en) | 2014-03-26 |
| CN103681293B true CN103681293B (en) | 2016-04-20 |
Family
ID=50318492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210333003.8A Active CN103681293B (en) | 2012-09-10 | 2012-09-10 | Self-alignment duplex pattern method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103681293B (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103903972A (en) * | 2014-04-22 | 2014-07-02 | 上海华力微电子有限公司 | Manufacturing method of graphs with small size |
| CN103985629B (en) * | 2014-05-21 | 2017-07-11 | 上海华力微电子有限公司 | The preparation method of autoregistration bilayer figure semiconductor structure |
| US10381802B2 (en) * | 2015-10-01 | 2019-08-13 | Philips Photonics Gmbh | Light emitting device |
| CN109727851B (en) * | 2017-10-31 | 2021-03-12 | 长鑫存储技术有限公司 | Multiple-interval exposure pattern and preparation method thereof |
| CN109767976A (en) * | 2017-11-10 | 2019-05-17 | 中芯国际集成电路制造(上海)有限公司 | Pattern photoresist, the multiple pattern of autoregistration, semiconductor devices and manufacturing method |
| CN110349906B (en) * | 2018-04-03 | 2021-11-09 | 长鑫存储技术有限公司 | Method for forming self-aligned trench |
| CN111696862B (en) * | 2019-03-12 | 2023-07-18 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| CN111933525B (en) * | 2020-09-22 | 2021-01-29 | 南京晶驱集成电路有限公司 | Etching method |
| CN113488474A (en) * | 2021-07-15 | 2021-10-08 | 广东省大湾区集成电路与系统应用研究院 | High-density static random access memory bit cell structure and process method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0753764A1 (en) * | 1995-07-14 | 1997-01-15 | Texas Instruments Incorporated | Improvements in or relating to semiconductor devices |
| US5876903A (en) * | 1996-12-31 | 1999-03-02 | Advanced Micro Devices | Virtual hard mask for etching |
| CN102439523A (en) * | 2009-07-23 | 2012-05-02 | 道康宁公司 | Methods and materials for double patterning |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS648676A (en) * | 1987-06-30 | 1989-01-12 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
2012
- 2012-09-10 CN CN201210333003.8A patent/CN103681293B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0753764A1 (en) * | 1995-07-14 | 1997-01-15 | Texas Instruments Incorporated | Improvements in or relating to semiconductor devices |
| US5876903A (en) * | 1996-12-31 | 1999-03-02 | Advanced Micro Devices | Virtual hard mask for etching |
| CN102439523A (en) * | 2009-07-23 | 2012-05-02 | 道康宁公司 | Methods and materials for double patterning |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103681293A (en) | 2014-03-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103681293B (en) | Self-alignment duplex pattern method | |
| CN103681234B (en) | The formation method of self-alignment duplex pattern | |
| JP6499654B2 (en) | Method for selectively etching a mask deposited on a silicon substrate | |
| US8435903B2 (en) | Semiconductor substrate surface treatment method | |
| US20080318169A1 (en) | Pattern forming method | |
| CN101770974B (en) | Method for fabricating shallow-trench isolation structure | |
| CN103839783A (en) | Self-aligned double patterning formation method | |
| KR20160126838A (en) | Semiconductor structure and manufacturing method thereof | |
| WO2011102140A1 (en) | Method for manufacturing a semiconductor device | |
| TW201537619A (en) | Patterned structure of semiconductor storage device and method for manufacturing the same | |
| CN102315158A (en) | Method for forming contact hole of semiconductor device | |
| KR20090027430A (en) | Method for forming micropattern in semiconductor device | |
| CN101719468B (en) | Method for manufacturing oxide layer capable of reducing gradient of side wall | |
| KR102366801B1 (en) | Method for manufacturing semiconductor device | |
| KR20080061651A (en) | Method for forming semiconductor device | |
| CN104637807B (en) | The method for making semiconductor devices using the double recompose-techniques of autoregistration | |
| CN101320683A (en) | Method of reworking a semiconductor substrate and method of forming a pattern of a semiconductor device | |
| CN109148272B (en) | Semiconductor device and method of forming the same | |
| WO2015172505A1 (en) | Ion implantation method | |
| US20130037961A1 (en) | Semiconductor device and method for fabricating the same | |
| CN106298522B (en) | The forming method of semiconductor structure | |
| TW201903844A (en) | Post etch treatment to prevent pattern collapse | |
| CN115036217A (en) | Method for improving wafer edge damage | |
| CN111696862B (en) | Semiconductor structure and forming method thereof | |
| CN103137463A (en) | Solution for detect of needle shape in deep groove etching process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |