CN103630286A - Pressure sensor - Google Patents

Pressure sensor Download PDF

Info

Publication number
CN103630286A
CN103630286A CN201310369763.9A CN201310369763A CN103630286A CN 103630286 A CN103630286 A CN 103630286A CN 201310369763 A CN201310369763 A CN 201310369763A CN 103630286 A CN103630286 A CN 103630286A
Authority
CN
China
Prior art keywords
barrier film
chamber
frequency
pressure
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201310369763.9A
Other languages
Chinese (zh)
Other versions
CN103630286B (en
Inventor
威廉·贝什林
皮特·斯蒂内肯
奥拉夫·温尼克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sciosense BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of CN103630286A publication Critical patent/CN103630286A/en
Application granted granted Critical
Publication of CN103630286B publication Critical patent/CN103630286B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
    • G01L9/0008—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
    • G01L9/0016—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L21/00—Vacuum gauges
    • G01L21/16—Vacuum gauges by measuring variation of frictional resistance of gases
    • G01L21/22—Vacuum gauges by measuring variation of frictional resistance of gases using resonance effects of a vibrating body; Vacuum gauges of the Klumb type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
    • G01L9/0008—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
    • G01L9/0019—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a semiconductive element
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

As may be consistent with one or more embodiments discussed herein, an integrated circuit apparatus includes a membrane suspended over a cavity, with the membrane and cavity defining a chamber. The membrane has a plurality of openings therein that pass gas into and out of the chamber. As the membrane is actuated, the volume of the chamber changes to generate a gas pressure inside the chamber that is different than a pressure outside the chamber. A sensor detects a frequency-based characteristic of the membrane responsive to the change in volume, and therein provides an indication of the gas pressure outside the chamber.

Description

Pressure transducer
Technical field
The method that various example embodiment relate to pressure-sensing equipment, circuit and system and comprise the realization of these circuitries and system.
Background technology
Plurality of devices in intelligent building and system, for the climate controlling of for example sea level elevation measurement aviation, level sensing, substitute energy, nuclear power station, the automobile in white domestic appliances application, (for example apply, tire pressure monitoring, engine control and brake system) and medical use (for example intraocular pressure and blood pressure sensing, need to exceed the pressure transducer that only ON/OFF is controlled).These systems conventionally adopt to be had accurately and the sensor of linear output becomes before critical and follows the tracks of these variations with variation in operation.The single ON/OFF condition of on off state means can not be for the closed-loop system of Data Trend Monitor.The rapid exploitation of microprocessor and the system based on microprocessor, has strengthened the additional demand for the electronic pressure transmitter in pressure switch.
As sensing material, there is having affected the pressure survey in industry and business application in silicon.Silicon based sensor is used known MEMS or micro electro mechanical system (MEMS) technology.In the automobile in good environment and the medical application of MEMS sensor, adopt.Due to compact dimensions, they may be relatively cheap in the situation that of large turnout.Most of MEMS pressure transducers have piezoresistive or capacitive character is read.
Many micro-machined pressure transducers use the barrier film of gas-tight seal, the reference cavity (in some cases, described gauge pressure be vacuum) of described diaphragm seal in certain gauge pressure.The diaphragm deflection causing via the pressure differential due between external pressure and gauge pressure (deflection) is measured external pressure.Can measure this deflection by pressure drag, capacitive character or optical sensor.Yet due to many reasons, these methods implement challenging.For example, if be not stable with reference to the gaseous tension in cavity, signal drift may occur, this may and then require high level barrier film impermeability.In addition, although thin or large-area barrier film for deflection and sensitivity, expect, it is airtight being difficult to make thin barrier film.Permeation with reference to the layer in cavity requires to recalibrate, and the temperature dependency of chamber pressure (according to Boyle's law (P*V=n*R*T)) may cause problem.In addition, if the pressure in cavity is near vacuum, if barrier film spring constant is lower, external pressure can make diaphragm deflection significantly, and the barrier film with taller springs constant k has reduced sensitivity (be directly proportional to l/k, k is directly proportional to maximum pressure to be measured).These and other problems realize for multiple application and have proposed challenge for pressure transducer.
Summary of the invention
The method that various example embodiment relate to pressure-sensing equipment, circuit and system and comprise the realization of these equipment, circuit and system.
According to example embodiment, integrated device electronics comprises: integrated circuit substrate, has cavity; The barrier film suspending, described in the barrier film that suspends form the wall of the chamber in described cavity at least in part; Driver, described driver causes that barrier film is with respect to the movement of cavity; And sensor, described sensor detects the characteristic based on frequency of described barrier film.Described barrier film has for holding the variable-volume of gas, the described volume of mobile change of described barrier film.Described barrier film has a plurality of openings, and described opening transmits gas and passes in and out described chamber, and described barrier film moves in response to exciting force.Described exciter response is in the electric control signal carrying in integrated circuit, with controlled frequency, produce power, described power causes that barrier film is with respect to the movement of cavity, thereby changes the gaseous tension of the volume of chamber and the generation chamber interior different from the pressure of chamber outside.Described sensor detects barrier film in response to the characteristic based on frequency of volume change, the power of described properties influence gas on barrier film, and the indication of gaseous tension in chamber is provided.
Another example embodiment relates to integrated circuit pressure transducer, and described integrated circuit pressure transducer has gas chamber, driver and sensor.Described gas chamber has the wall that holds gas, and described wall comprises barrier film, and described barrier film has for controlling the electrode of the power being produced by driver.Described masterpiece, for barrier film, causes that barrier film moves, and changes the volume of chamber with the biasing in response to being applied to electrode.Described barrier film has a plurality of openings, and via described opening flowing gas with the pressure between the outside gas of the gas in balance chamber and chamber, when encouraging described barrier film below threshold frequency, make gas inflow and outflow chamber, and in response to encourage described barrier film more than threshold frequency, alleviate all in fact air-flows via opening.The excitation biasing becoming when described divider chain applies to barrier film via electrode, periodically to encourage barrier film, and reduces and expands the volume of chamber.The resonance frequency shift that detects barrier film by the electrical impedance based on sensing element (for example, with respect to reference to) and resonance frequency shift based on detecting the indication of pressure in chamber is provided, described sensor is made response to the divider chain of the resonance frequency excitation barrier film according to barrier film.In response to described divider chain excitation barrier film and pumped gas, pass through opening, the viscous flow of the gas of described sensor based on by opening provides the indication of pressure in chamber.In various implementations, described sensor is based at least one provides the indication of pressure in chamber below: frequency when barrier film amplitude starts to decline; And in barrier film amplitude or phase place as under the concrete frequency representing via the impedance between electrode.
Another example embodiment relates to pressure sensor apparatus, comprise have sidewall cavity, form barrier film, driver and the sensor of one of sidewall.In described barrier film, there are a plurality of openings, when encouraging described barrier film in resonance frequency or more than resonance frequency, the size of described opening prevents that all in fact air-flows are by described opening, and when encouraging described barrier film below resonance frequency, the size of described opening is convenient to air-flow by described opening.Described driver periodically encourages described barrier film with the gas in compression and expansion cavity promptly.Described sensor detects described barrier film in response to the characteristic based on frequency of periodic excitation, and the characteristic based on frequency based on detecting provides the output that represents barrier film place pressure.
More than discuss/general introduction is not intended to describe each embodiment of the present disclosure or each implementation.Following accompanying drawing and detailed description are also exemplified with various embodiment.
Accompanying drawing explanation
Consider by reference to the accompanying drawings following detailed description in detail, can understand more all sidedly various example embodiment, wherein:
Fig. 1 shows according to the sectional view of the pressure sensor apparatus of example embodiment;
Fig. 2 shows according to the sectional view of another pressure sensor apparatus of another example embodiment;
Fig. 3 shows according to the top view of the resonance pressure sensor of another example embodiment, and described resonance pressure sensor has and comprises the resonant iris of sacrificing hole;
Fig. 4 shows the curve with respect to barrier film radius according to the resonance frequency of another example embodiment realization;
Fig. 5 A shows the deflection to diaphragm center according to the static excitation of excitation frequency of passing through according to another example embodiment;
Fig. 5 B shows according to the phase place between the driving voltage of another example embodiment and the diaphragm deflection corresponding with the deflection shown in Fig. 5 A;
Fig. 6 shows the cutoff frequency that can realize according to another example embodiment with respect to the curve of barrier film radius;
Fig. 7 shows the impedance phase for different pressures that can realize according to one or more example embodiment for the curve of frequency;
Fig. 8 shows according to the press device of step in the technological process that is used to form pressure transducer of another example embodiment;
Fig. 9 shows according to the equipment of Fig. 8 in other step of another example embodiment;
Figure 10 shows the equipment that pressure transducer is combined with MEMS microphone according to another example embodiment;
Figure 11 shows another equipment that pressure transducer is combined with MEMS microphone according to another example embodiment; And
Figure 12 shows according to the pressure sensor apparatus in the related process stage of another example embodiment.
Embodiment
Although the embodiment here can be revised as various improvement and alternative form, as example, its details is shown in the accompanying drawings, and will be described in detail.Yet it should be understood that and be not intended to limit the invention to described specific embodiment.On the contrary, be intended to cover all improvement, the equivalence in the scope of the invention that drops on the various aspects that comprise that claim limits and substitute.In addition the term " example " that, runs through this application use is just in order to illustrate rather than to limit.
Device, system and the structure of the number of different types that the aspect of be sure oing various embodiment can be applied to comprise pressure-sensing.Although the present invention needn't limit like this, by using context to should be appreciated that various aspects to the discussion of example.
Various embodiment relate to the pressure transducer based on barrier film, and the excitation of its septation has changed the volume of the chamber of its septation formation sidewall.Barrier film comprises a plurality of openings, and the excitation frequency of described opening based on barrier film (or excitation frequency do not exist) is convenient to and alleviated gas inflow and outflow chamber.Particularly, for example, when barrier film while being static (or, operate under low frequency), described opening is convenient to pressure in chamber and the pressure equilibrium of forces of chamber outside.When more promptly encouraging barrier film, described opening alleviates air-flow via the viscous interaction of gas and opening, and in the resonance frequency of barrier film or near resonance frequency, stops air-flow.Therefore, detect the characteristic based on frequency of barrier film, and used as the indication to air pressure in chamber.
In one implementation, under resonance frequency, encourage barrier film, and the indication for detection of pressure in chamber by the skew of resonance frequency.In another kind of implementation, encourage barrier film being less than under the frequency of resonance frequency, and the indication as pressure in chamber by (viscous) flow resistance of the gas by opening.This method is used air pumping effect, and the frequency of barrier film amplitude while starting to decline and/or the barrier film amplitude under specific one or several frequency for detection of chamber in the indication of pressure.
For example, when encouraging the barrier film of chamber, change the volume of chamber and the air of compression or expansion chamber inside.Compression or the air expanding carry out the poor trend of equalized pressure by flowing through air vent and flowing out or flow into chamber.Finite size via shear viscosity and air vent has slowed down this balance.Pressure relaxation time T depends on many factors, for example the number of air pressure, air vent and size.Flow resistance and pressure differential by hole have provided by the air-flow of tubulose air vent, and described flow resistance has R=8 η L/ π r 4form, wherein r be pipe radius, L is length of tube (L > > r), and is that η is the shear viscosity of air.The chamber for the movement along with barrier film with thin clearance, air, along this Clearance Flow, causes the larger flow resistance that needs consideration.
In various embodiments, in the pressure limit between approximately 0 bar to 1 bar, realized the larger skew (for example, about 2.2x) of barrier film resonance frequency.Under higher excitation frequency, little air vent prevents that air from flowing into significantly and flowing out chamber in an Energizing cycle.In (chamber) very little volume, the compressibility of gas has produced the additional springs constant for tuned mass spring system, and described additional springs constant moves to higher frequency by resonance frequency.Due to barrier film vibration, temporarily reduce cavity volume, and increased resulting pressure, this produces clean power in opposite direction.During oscillation period, in chamber, molecule number keeps constant, therefore via little volume, has promoted above-mentioned situation.
Can be by resonance frequency T resinverse (cycle length) remain and be less than pressure relaxation time T, barrier film has the particular resonant frequency f that depends on barrier film geometric configuration and material (ignoring viscosity) in this case res, to adapt to various implementations.When excitation barrier film, the air of chamber interior and the effect of air viscosity are for being characterized pressure.Periodicity or short pulse excitation are used for encouraging barrier film.Under the abundant frequency lower than 1/ τ, because being pumping, barrier film enters with pumping to go out air, the movement of barrier film is not subject to the impact of increased air.Under the higher frequency in 1/ τ left and right, the viscosity of air is as the resistance for air pumping effect and diaphragm stimuli.Phase differential between diaphragm stimuli amplitude and diaphragm stimuli and barrier film move reduces.Under upper frequency, air can not be followed pump action, and in essence not by pumping, but instead compressed and expansion.Meanwhile, reduced damping, because the effect of gas volume viscosity is conventionally much smaller than their shear viscosity.
Have threshold frequency, due to the impact increase of shear viscosity, barrier film amplitude starts at this threshold frequency place to decline.Along with frequency increases, barrier film amplitude can be for zero, because bulk viscosity is conventionally much smaller than shear viscosity.Meanwhile, phase differential declines, and gets back to zero, has represented the loss reducing.When frequency further increases, reach the resonance frequency of barrier film.The compression and expansion of volume of air also causes spring force except the elastic force of barrier film, and it causes the skew of the resonance frequency that depends on air pressure.For the general information relevant with MEMS sensor, and for the specifying information relevant with air stream/damping aspect with MEMS resonator types device, can be with reference to Suijlen, Koning, van Gils and Beijerinck " Squeeze film damping in the free molecular flow regime with full thermal accommodation ", Sens.Actuators A:Phys. (2009), is all incorporated in this as a reference by it.In addition, for the relevant general information of the detection with resonance frequency and for the relevant specifying information of the method for the skew with detection resonance frequency, described method can be combined with one or more example embodiment, can be with reference to T.Nakamoto and T.Kobayashi at IEEE Trans.Ultrasonics, Ferroelectrics and Frequency control, vol.41, p.806 " the Development of Circuit for Measuring both Q-variation and resonant frequency shift of quartz crystal Microbalance " of (Nov.1994), it is all incorporated in to this as a reference.
In conjunction with various example embodiment, sensor device compression or expanding gas, and detect the velocity characteristic of gas, and by the velocity characteristic that detect for detection of pressure.The barrier film in specific embodiment Zhong， pressure chamber with vibrating membrane (diaphragm) type that comprises opening, described opening allows gas to flow into and flows out chamber.Described opening is enough little, in Fast Compression with between the phase of expansion, can not affect significantly the pressure differential that barrier film two ends produce, but makes gas flow for example, the long-term pressure differential at barrier film two ends is carried out to balance (as mentioned above).To the barrier film of vibrating membrane type encourage promptly to compress or expansion chamber in gas, and for example by the variation by capacitance detecting, detect the equilibrium rate of gas in compression or after expanding.Pressure by the speed detecting for definite barrier film outside.
Compression discussed here can be positive or negative.For example, during gas in barrier film forward ground compression chamber, when gas makes barrier film move/increase the volume of chamber, the aspect of other that detect the speed of expansion of gas or diaphragm stimuli based on frequency.When barrier film negative sense ground pressure gas the volume of chamber (, increase), other of the speed of the gas that detects compression when discharging or diaphragm stimuli are based on aspect frequency.In each situation, pressure influence expands or the gained speed of gas during compression, and can the indication as pressure in chamber by the speed detecting, and the indication of the pressure of chamber outside (because balance).
In some implementations, sensor device is formed to a part for Semiconductor substrate, a part for Semiconductor substrate forms cavity.Barrier film and cavity are configured to form chamber and gas are trapped in chamber.In this case, etching cavity or formation cavity in the substrate that barrier film extends thereon, for example, in the layer of the Semiconductor substrate forming on insulation course.When (for example, with respect to substrate) excitation barrier film outside plane, change the volume of chamber, the gas in compression or expansion chamber.
According to various embodiment, sensor device is according to one or more operations of various ways.In one embodiment, sensor device is associated with the number of gas molecule in chamber by the speed of the characteristic based on frequency of barrier film and/or gas.The number of gas molecule is for being characterized the pressure of chamber.For example, the number of gas molecule affects the amplitude of barrier film, the molecular velocity after the damping of barrier film and compression.In some implementations, sensor device is associated with the time average environmental pressure in a plurality of compression-expansion cycle upper chamber by the number of gas molecule in chamber.
In another embodiment, the spring constant of detection system, and used as the indication of (and chamber outside) pressure in chamber, because the number of gas molecule affects the needed power of pressure gas.In some implementation, by detecting resonance frequency, carry out this method, described resonance frequency depends on spring constant, and is therefore the function of pressure.In certain embodiments, use the compression and expansion time more much longer than the mechanical resonant cycle of chamber to be convenient to the method based on resonance.In a word, can, in the situation that not using fixing/known (specification (gauge)) pressure and not carrying out sensing based on friction force, carry out the said method for pressure-sensing.
Multiple barrier film is for adapting to different application.Engineering properties based on barrier film and the geometric configuration of chamber arrange device performance.Select the composition of barrier film and the barrier film deposition parameter such as temperature and plasma power that internal stress is set.The engineering properties of barrier film (for example, mechanical stress, rigidity and membrane thicknesses) is provided with barrier film hardness, is therefore provided with the sensitivity of pressure transducer.
With one or more of several different methods, encourage barrier film.In some implementations, via electrostatic force excitation barrier film.In other implementations, via piezoelectric forces excitation barrier film.In other implementations, use other (for example physics) power to encourage barrier film.
In the device of number of different types, realize circuit described herein and correlation technique to adapt to various application.For example, some application relate to the device of MEMS (micro electro mechanical system) (MEMS) type, for example MEMS sensor platform, MEMS stream electric switch and MEMS microphone.Other application relate to mobile phone (for example,, for microphone), weather station, GPS application (for example height above sea level) and wrist-watch is one or more.Some embodiment based on automobile relates to one or more in detecting of tire pressure monitoring system (TPMS), air bag, impact registration (registration) device, exhaust and engine/fuel related pressure.Other embodiment relate to the application of environment and intelligent building, for example, for example, at heating, heating ventilation and air-conditioning (HVAC) system, air-flow, gas detection (CO 2) and air strainer in pressure drop in one or more in pressure detection.Medical application comprises the pressure-sensing for respirator, breathing equipment, osophone or gaseous tension.
Referring now to accompanying drawing, Fig. 1 shows according to the sectional view of the pressure sensor apparatus 100 of another example embodiment.Equipment 100 comprises the integrated circuit substrate 110 wherein with cavity 112.Barrier film 120 is suspended on cavity, and utilizes the sidewall of cavity to define for holding the cavity area of gas, for example air or other gas (and for example can comprise steam).Barrier film 20 comprises a plurality of openings, as example mark opening 124 and 126.These openings transmit gas (for example, the gas such as air) between cavity area and the volume adjacent with chamber.The size of opening can be set for different application, and in certain embodiments, the diameter of described opening is between about 100nm and 2000nm, and in other embodiments, the diameter of described opening is less than about 2nm.
Barrier film 120 operation is for respect to chamber and deflection, to regulate the volume of chamber, has been shown in dotted line the diaphragm position corresponding with example deflection 122, and described deflection has reduced the volume of chamber.For example, described excitation can be by comprising that the driver of biasing circuit 130 realizes, and can realize Sing plus (for example, for as shown deflection barrier film) or time the cycle motivation that becomes, wherein according to concrete one or more frequency excitation barrier films 120.For example, can control this biasing via (be directly connected or be connected via the interconnection) control circuit in integrated circuit substrate, and this biasing can be carried out excitation with the pressure equilibrium of chamber outside by the pressure in chamber afterwards.Because the promotion via air vent geometric configuration and viscous effect, the balance that opening in chamber has promoted chamber interior and outside gaseous tension (for example, under stable state), while encouraging barrier film under relatively low speed/frequency, allow the viscous flow of gas, and ought be under higher speed/frequency (for example, being greater than threshold frequency, near resonance frequency) excitation suppresses approximately all air-flows during barrier film and passes through opening.In this case, barrier film 120 operation, as sealed the volume of chamber in high-frequency, is convenient to the wherein detection of gaseous tension, and is therefore convenient to the detection of corresponding (balance) pressure of chamber outside.Under low frequency, barrier film 120 operation is for via opening viscous ground flowing gas, and the viscosity of gas and the flow resistance of the opening number of opening (and comprise) are for detection of the pressure characteristic of gas in chamber.In some instances, use known pressure, viscosity and flow resistance are also used as the indication of gas componant.
Detect the frequency characteristic of barrier film, and be used as the indication of pressure in chamber.For example, can detect this specific character via biasing circuit 130 or via separated sensor 140.In some implementations, the skew of the resonance frequency that is barrier film by frequency characteristic detection (for example, when opening passes through a small amount of gas or does not pass through gas), or detect for relevant to the pumping effect of gas in chamber (for example, frequency while starting to decline by identifying the amplitude of barrier film 120, or barrier film amplitude under concrete frequency, as the electrical impedance via sensing element represents).These aspects also can with the velocity correlation of the expansion/compression of gas in chamber.
Fig. 2 shows according to the sectional view of another pressure sensor apparatus 200 of another example embodiment.Equipment 200 comprises barrier film 203, and described barrier film has opening 207 and 208, and forms the sidewall of the chamber/gap area 205 being limited by barrier film and substrate region 204,206 and 209, wherein 204 and 206 barrier film is anchored to substrate 209 below.Electrode 201 on barrier film 203 and substrate 209 and 202 operations are for (in the situation that biasing is applied to electrode 202 and 201) excitation barrier film 203 respectively.In various implementations, the indication by the impedance representing between electrode as the frequency characteristic of barrier film 203, for example deflection of barrier film, and for detection of the pressure in chamber.
In a vacuum, spring constant depends on barrier film 203 material parameter and the geometric configuration of (comprising opening wherein).Under higher external pressure, gas enters into narrower gap area 205 via opening.If the resonance frequency of barrier film is enough high, the aperture in 203 and narrower gap area 205 combine with the viscosity of gas, prevent that gas from leaving in fact cavity region in a harmonic period.Therefore, the amount of gas keeps constant, makes perfect gas law can be applied to equipment 200.For rapid expanding and compression, can ignore heat interchange, make adiabatic ground compression and expansion gas.Therefore, P*V γ=constant is effectively approximate, and wherein γ is adiabatic exponent, and for diatomic gas (as airborne nitrogen and oxygen), adiabatic exponent is approximate 7/5.If downward diaphragm deflection (as 122 of Fig. 1 represented) equals Δ z (piston mode model) in whole area A, this with there is spring constant k gasadP/dz=A*d (the P*V of==- γ/ V γ)/dz=-A*P*V γd ((Az) -γthe spring of)/dz=γ P*A/z is corresponding.As example, for thering is z 0the gap of=300nm and 100 microns of radius barrier films under atmospheric pressure (P=100kPa), k gas=15000N/m.
In the more unequal embodiment of every bit displacement on barrier film, use as follows correction factor α therein.
k gas＝αγP*A/z 0 (1)
Model shape based on resonance is selected correction factor.
Therefore, resonance frequency depends on external pressure, because the gas-operated of inside cavity is spring.Total spring constant of gas and barrier film is approximate providing as follows:
k total＝k mem+k gas (2)
Because effectively (or distribution) quality m and spring constant k of barrier film memwith pressure independent, and k gasbe directly proportional to pressure, so resonance frequency f resalso depend on pressure, as shown in equation 3 and 4:
F res=((k mem+ γ PA/z 0)/(4 π 2m)) 1/2=f 0(1+ α γ PA/ (k memz 0)) 1/2(3) and
df res/dP＝f 0 2αγA/(2f resk memz 0) (4)
Wherein, f 0it is the resonance frequency of true Overhead Sensor.Equation (3) shows for area A and gap z 0larger ratio and less spring constant k mem(for example, for less membrane thicknesses and/or lower stress), the pressure sensitivity of device is maximum.In order to alleviate/prevent gas, in one-period, leave cavity, use upper frequency f 0(low m and high k mem) and less gap z 0, and the aperture of relatively small amount ( hole 207 and 208 shown in the xsect of Fig. 2), shown in aperture spaced apart and fully spaced apart with the center of barrier film fully each other.
If barrier film 203 is at frequency f resonance, described frequency is high enough to prevent that gas from fleeing from the cavity that comprises gap area 205 if having time, the amplitude being directly proportional to diaphragm displacement according to frequency f utilization (| Δ P|=k gas| Δ z|/A) carry out the pressure P of gas in modulation gap 205 g, make P g(t)=P 0+ | Δ P|sin (2 π ft).Pressure differential Pg-P 0cause the power (F=(P that depends on amplitude on barrier film g-P 0) A), described power is as effective spring constant k gas.
In certain embodiments, barrier film 203 comprises the SiN layer of the 700nm that uses PECVD formation, and electrode 201 and 202 comprises the metal electrode that 250nm is thick, for example, comprise W, TiN or Al, and gap size z 0(205 place) is 300nm.Hole has (comprising 207,208) diameter of approximately 2 μ m, and along the marginal distribution of barrier film 203.In some implementations, barrier film 203 is the circular diaphragm with the diameter within the scope of 25 μ m to 90 μ m.In other implementations, barrier film 203 is rectangle or square barrier film, and can be implemented as and the similar surface area of above-mentioned diameter about circular diaphragm.
Fig. 3 shows the top view of the resonance pressure sensor 300 of another example embodiment according to the present invention, and described pressure transducer comprises having the resonant iris 310 of sacrificing hole 312.Sensor 300 comprise with barrier film 310 on electrode (for example, similar with the electrode 201 of Fig. 2) the top electrodes contact 320 of coupling and with the bottom electrode contact 330 of bottom/bias electrode (for example, similar with the electrode 202 of Fig. 2) coupling of sensor 300.Ground-electrode 340 couplings, with by substrate ground connection, form sensor 300 in described substrate.As example, show eight air vents (being labeled as 312), and described air vent is positioned near the outer perimeter of barrier film 310.
Fig. 4 shows resonance frequency as realized according to one or more embodiment with respect to the curve of barrier film radius.With respect to larger diameter, for less diameter, resonance frequency increases, because barrier film shows according to the mode of rigidity more.Curve 410 shows the resonance frequency for the mechanical stress of 0MPa in barrier film, and curve 420 shows the resonance frequency (tension stress (tensile stress)) for 100MPa.Curve 430 shows the resonance frequency for the measurement of example diaphragm diameter.
Fig. 5 A shows according to the deflection of the diaphragm center for static excitation of other example embodiment, and Fig. 5 B shows the relevant phase place according to other embodiment.Particularly, with respect to the excitation frequency of 90 μ m radius barrier films under environmental pressure, drawn deflection amplitude and phase place, described barrier film can be realized as shown in Fig. 1,2 and/or 3.Near the noise increasing 50Hz is the mechanical vibration due to measure setup.Line 510 and 520 both point of crossing represent cutoff frequency (530).Sinusoidal excitation has the amplitude of 2V, and bias voltage is 8V (top square) and 10V (bottom square).
Under low frequency, deflection amplitude is not subject to the restriction of gas in chamber, and deflection and excitation homophase.Movement is so slow, for example makes gas pumping, by hole (, 207 of Fig. 2,208).Under the frequency of about 200Hz, the damping of the increase of gas in the time of for example, due to the thin gap in flowing through chamber (, Fig. 2 205), amplitude starts to decline.Described damping depends on the geometric configuration in gap and the shear viscosity of internal table surface properties and gas.Described damping also causes the increase of phase delay.These damping effects that detection applies via pulse or the periodic excitation of barrier film, and for detection of the characteristic based on frequency of the barrier film that pressure is represented.Under frequency more than 10kHz, the damping of gas is so high, makes the gas in one-period can not inflow and outflow gap area.Therefore,, along with frequency increases, reduced the lateral airflow by gap.Because Air Flow still less, and due to the low bulk viscosity of gas, damping force reduces again.Under these frequencies, the force of compression of the air of inside, gap becomes overriding.Because bulk viscosity is less than shear viscosity conventionally, so the phase place of deflection gets back to 0, represent the damping reducing.Under frequency more than 10Hz, the compression of measurement gas is measured as to constant deflection amplitude.
For the device with small radii, center and the distance between hole of barrier film are less, have made to increase the cutoff frequency (530) of line 510 and 520 infalls, and under this cutoff frequency, gas does not have time enough to leave resonator gap.Fig. 6 shows cutoff frequency as realized in conjunction with barrier film with respect to the curve of barrier film radius.
Fig. 7 shows the curve for frequency for the impedance phase of 90 μ m diaphragm diameters, shows the skew of the resonance frequency that the variation due to the clearance pressure of realizing according to one or more embodiment causes.Show at atmospheric pressure (710), more than 900mbar (720), more than 860mbar (730), 860mbar (740), 200mbar (750), 60mbar (760) and 2e -2response curve under mbar (770).When pressure is increased to 100kPa from 0, the increase factor of resonance frequency is 2.2.For example,, by apply DC bias voltage V at barrier film two ends dctime measure exciting electrode (for example, as shown in Figure 2) between with respect to the electrical impedance of frequency, measure resonance frequency.By electrostatic force, stimulate barrier film, and (electric capacity between electrode 201 and 202 is distance z by measuring capacitive current 0the function of+Δ z) detect the motion of barrier film.
In certain embodiments, have the feedback loop of amplifier for generation of MEMS oscillator, described MEMS oscillator produces the AC output signal of the frequency with the external pressure of depending on continuously.The frequency of output signal is measuring of pressure.With various ways one or more, determine frequency, wherein measure the resonance frequency of MEMS, mechanical resonator or rlc circuit.
As shown in above equation (3), can under pressure in a big way, carry out described measurement, and described measurement can become sensitiveer under higher pressure.Yet under lower pressure, can make the gap z in chamber 0less, area A is large, k memless and frequency f 0be high enough to prevent that the barrier film due to resonance from causing pushing out gas.In certain embodiments, the array that the physical property with respect to such as vibrating membrane size, bore dia and chamber size is had to the pressure transducer of different sensitivity scope combines the range of sensitivity that provides broad.In certain embodiments, the implementation that the Q factor of pressure-sensing discussed here and resonance is measured combines, for example, in conjunction with reference paper Nakamoto cited above, discuss.
According to various example embodiment, calibration steps is for calibrating pressure transducer as discussed here, for example compensate the skew of the resonance frequency of barrier film, described skew may be the variation generation due to process conditions, for example, can relate to inhomogeneous membrane thicknesses.In some implementations, the resonance frequency of determining barrier film under reference pressure is to look at whether there is skew.Other implementation relates to the device that has different size or hole density by use and checks whether " basis " pressure resonance frequency is offset; If the distance of Kong Yukong is enough little, fundamental resonance frequency will become and pressure independent, and the XOR any of poor quality in barrier film changes and can accurately determine, and for the calibration of pressure sensitive barrier film is proofreaied and correct.Other implementation relates to frequency of utilization and scans and determine that pressure (for example starts spring constant for the oeverall quality spring system cutoff frequency while working, in above Fig. 5 A 530), to determine the calibration curve under reference pressure and to use subsequently described curve to determine environmental pressure according to for example cutoff frequency.
In other embodiments, calibration is for considering that temperature is for the impact of resonance frequency, and as thermal expansivity that can be based on material, thermal expansion has caused the skew (temperature variation of Young modulus is more much smaller than thermal expansion effects) of resonance frequency.Can serviceability temperature sensor and look-up table proofread and correct this skew.In some cases, humidity may have the impact on the quality of device or spring constant.Because the variation that humidity causes also can be proofreaied and correct by humidity sensor and look-up table.According to calibration or model, obtain the calibration data in look-up table.
In certain embodiments, alleviate humidity and change the impact for pressure transducer.For example, in some implementations, with hydrophobic coating, apply resonator barrier film.In other implementations, reduce surfaceness and the poriness of barrier film.
In another embodiment, measure a plurality of upper resonance frequency (f of identical barrier film 1, f 2, f 3...) and for realizing calibration.Because it is different for the impact of resonance frequency from pressure for the impact of resonance frequency that quality or spring constant change, the ratio of resonance frequency (f for example 2/ f 1, f 3/ f 2) for the impact of mass loading and pressure variation are distinguished.In fact, minimum barrier film pattern (f 1) will than the higher mode cavity volume of much less (require change) for pressure sensitive many.All patterns all depend on quality and spring constant approx as sqrt (k/m).
Several different methods can be for the manufacture of sensor device discussed here.In certain embodiments, deposit bottom metal electrode (for example thick PVDAl of 200nm) and on substrate, carry out subsequently composition, the common separation layer of the monox on naked silicon or silicon nitride for example, or there is the separation layer on the CMOS wafer top of integrated circuit below.Use PECVD or LPCVD on top, conformally to deposit isolation silicon nitride or monox, then be sacrifice layer (for example, the thick metal level of 300-500nm such as Mo, Al or Cr) deposition, sacrifice layer is patterned into have wing flap (flap) suitable round-shaped, to access this one deck to sacrifice etching at circular diaphragm region exterior.Larger expendable film thickness can, for generation of larger gap and less spring constant, have less generally sensitivity.Less thickness can be for measuring lower gaseous tension.After sacrifice layer deposition, it is then the deposition (for example 200-300nm is thick) of silicon nitride or the monox cap rock of uniform deposition.Thin top electrodes (Al) is deposited on top and carry out subsequently composition.More thin electrodes (for example 100nm-200nm) can be for realizing less temperature expansion coefficient.Then with PECVD silicon nitride or silicon oxide layer, cover electrode.
Fig. 8 shows the press device 800 in the step of technological process that forms resonance pressure sensor according to specific embodiment.Can, according to said method forming device 800, start from substrate 810, insulation course 820, each nitride layer 830 and 840, bottom electrode 850, sacrifice layer 860, top electrodes 870 and nitride cap 880.Technological process continues, on sacrifice layer 860, stop at barrier film around according to circumference form for example, to the composition in hole and dry etching (, the opening of all openings 312 as shown in Figure 3 and so on, diameter is 2 μ m).
Equipment 800 when Fig. 9 shows other step has wherein formed cavity via opening 990 during the etching of sacrifice layer 860.In certain embodiments, utilize PES etching (potpourri of phosphoric acid, sulfuric acid and acetic acid) optionally to remove the sacrifice layer based on Mo.In some implementations, equipment 800 be also further coated with on layer 880 layer (for example, SiN), to alleviate the pollution of resonant iris.With top for encouraging and bottom electrode be electrically connected to and bond pad produces by follow-up composition, etching and deposition.
Multiple diaphragm type is used for adapting to concrete application.In certain embodiments, thickness be less than about 2nm only have the Graphene of several atomic thickness or other barrier films (for example boron nitride or molybdenum disulfide) for expecting the application of less flexible rigidity.Tension force/spring constant in barrier film may be lower due to less thickness (h), makes built-in stress (σ) be multiplied by the product very little (k=4 π σ h) of thickness.Therefore, the barrier film of much smaller size can be for realizing similar spring constant.For example, realize Graphene barrier film to obtain and the similar pressure sensitivity of barrier film (dz/dP) with much smaller (little 100-1000 doubly) area.In other embodiments, use semi permeability barrier film or there is the barrier film of micropore/nano-pore.Because these barrier films have the different permeability for gas with various, can make barrier film is optionally for the partial pressure of gas with various, thereby for by the pressure reading of sensor is compared to the ratio of determining potpourri gas from different semi permeability barrier films.
Other embodiment relate to the equipment that comprises pressure transducer and ohm mems switch, can use similar technological process to process.By sensor and switch are combined, can in identical device, realize several pressure transducers with different-diameter.Described switch is then for switching between different pressure transducers, because larger barrier film is sensitiveer under lower pressure, and less barrier film is sensitiveer under higher pressure.Profit can realize the low-cost processes with low electric capacity in this way, wherein in little Substrate Area, has the stray capacitance and the very broad pressure limit that reduce.
Figure 10 shows the equipment 1000 that pressure transducer and MEMS microphone are combined according to another example embodiment.Equipment 1000 is included in for example, MEMS pressure transducer and MEMS microphone on common integrated circuit substrate 1005 (silicon), described MEMS pressure transducer comprises the barrier film 1020 with opening 1022, and described MEMS microphone comprises the barrier film 1040 with opening 1042.Described barrier film is supported by silica material 1007 and 1008.Backboard has the region in pressure transducer and microphone diaphragm 1010 and 1030 (for example, polysilicon) respectively, and composition has opening 1012 and 1032 therein.Electrode (for example gold) 1051-1057 locates as shown.When being made by silicon, barrier film in order to obtain larger resonance frequency, the diameter of pressure transducer can be chosen between 50-100 μ m.The biasing that for example, can apply via backboard 1010 encourages barrier film 1020.In some implementations, pressure transducer is for example, than the diameter of microphone (1mm) more much smaller, and is manufactured on the corner of MEMS microphone tube core.
Figure 11 shows also another equipment 1100 that pressure transducer and MEMS microphone are combined.Equipment 1100 is similar with the equipment shown in Figure 10, and carries out mark with similar reference number, does not have the backplane region on barrier film 1,020 1010 as shown in figure 10 on pressure-sensing equipment.In this embodiment, between substrate 1005 and barrier film 1020, carry out below excitation.Substrate 1005 comprises the conductive material such as highly doped silicon, and for measuring the impedance between resonant iris and substrate.
Figure 12 shows the equipment 1200 with processed wafer (for example,, via CMOS) 1230 as realized in conjunction with one or more example embodiment.CMOS rear end 1232 comprises metal layer at top 1234, and sensor, on CMOS rear end, is passivation layer 1236 therebetween.Pressure transducer comprises plane bottom electrode, and described plane bottom electrode comprises Al layer 1238 or the silit cap rock 1240 of the SiN with rich Si in this example.In some implementations, use Ti/TiN or tungsten bottom electrode.Bottom electrode is connected with CMOS metal layer at top by through-hole interconnection.Top and bottom electrode are spaced apart by sacrifical oxide 1241, remove this sacrifical oxide 1241 while processing in the region between electrode for capacitors subsequently.By mineralization pressure sensor on the top such as integrated circuit such as cmos circuits, realized fully integrated scheme.The metal layer at top 1234 of cmos circuit can be used as for the barricade that above covers the bottom electrode of (overlying), and also for enabling the formation of interconnection.
The integrated elimination of being convenient to bonding wire of CMOS, this has reduced stray capacitance.Use the as directed through hole that extends through passivation layer 1236 below bottom electrode, also via being positioned at metal interconnected 1234 below bottom electrode, realized and being electrically connected to of pressure transducer bottom electrode, described through hole also extend up through passivation layer 1236 with oxide 1242 to be connected contact pad 1248.
Top contact pad can be for the input and output of circuit.Figure 12 shows the contact pad that (connecting by the side direction in metal layer at top) contacts with bottom capacitor electrodes.In some implementations, omitted this direct contact, and electrode for capacitors is realized and the contacting of IC below of processing for signal.So described contact pad is for IC input and output.
Equipment 1200 comprises tungsten top electrodes 1244 and dielectric sealant 1246.For example, top electrodes can comprise the combination of titanium-tungsten, titanium, titanium nitride, aluminium, SiGe and/or these materials.Multiple deposition process for electrode 1234,1238 and 1244 is used for adapting to various embodiment, and can comprise physical vapour deposition (PVD), high-density plasma sputter, plasma reinforced chemical vapour deposition (PECVD), chemical vapor deposition (CVD) and ald (ALD).
After sacrifical oxide is removed, deposit sealant 1246, and sealant 1246 is for being partially or fully filled in the sacrifice etching opening forming on the cavity region of pressure transducer, this can be for reducing diameter and/or the number of air vent in barrier film.In some implementations, seal described barrier film, then at selected point, open opening to produce air vent.In other implementations, form the hole of different size, wherein, in common sealing technology, fill less hole and larger hole is diminished, obtained having the hole of the required number of required hole dimension.In certain embodiments, sealant comprises one or more among the stacked combination of silicon dioxide, silicon nitride or these materials.Deposition process for monox comprises high-density plasma oxidation (HDP oxidation), plasma reinforced chemical vapour deposition (PECVD), chemical vapor deposition (CVD) and ald (ALD).
Aluminium contact pad 1248 provides and being connected of device, and the through hole of having filled W extends downward bottom electrode layer from top aluminium contact pad, and also from bottom electrode layer, extends to CMOS metal layer at top, as mentioned above.If select different materials as top electrodes, for example, select SiGe, therefore with different materials (SiGe) filling vias and anchor point.
SiC layer 1240 alleviates/prevents the short circuit between top and bottom electrode, and avoids by sacrificing HF gas phase etching for the etching of passivation layer 1236 below.In some implementations, the SiN of rich Si is used as to etching stopping/passivation layer.Through hole is embodied as and is electrically connected to path with realization and top electrodes and contacting of electron device below.In some implementations, anchor 1250 is as cavity etching stopping protection ring around, and as mechanical anchor with the fixing diaphragm deflection at barrier film circumference place.
Technological process as above and/or for shown in and described various device used the whole bag of tricks.For example, can be by the SiN layer of rich Si, rather than SiC, be arranged on bottom electrode, to prevent the short circuit between top and bottom electrode.This Short Circuit withstand layer can be arranged on the top of sacrificial oxide layer, or can be below sacrificing etching oxide and above all use the SiN layer of rich Si.Can carry out composition to form the anti-static friction projection of device to one of these layers.In the time of on the top that the SiN layer of rich Si is arranged on to sacrificial oxide layer, the supporting layer that the SiN layer of rich Si can be used as to top metal electrode is to avoid bending.
In some implementations, the bottom electrode by electrode 1238 as excitation, is used as sensing electrode by electrode 1239.Other bipolar electrode structures are used for adapting to some embodiment.
Based on above discussion and explanation, what it should be understood by one skilled in the art that is in the situation that strictly do not follow example embodiment and the application that illustrates and describe here, can carry out various modifications and variations to embodiment.For example, can use the diaphragm material of difformity, thickness and type, and different hole dimensions, position and quantity can be used for to barrier film to adapt to different application.These improve and do not depart from true spirit of the present invention and the scope that comprises claims.

Claims (25)

1. an integrated device electronics, comprising:
Integrated circuit substrate, has cavity;
The barrier film suspending; the described barrier film suspending forms the wall of chamber; described chamber is at least in part in described cavity and have for holding the variable-volume of gas; in described barrier film, there are a plurality of openings; described opening is configured for and transmits gas and pass in and out described chamber, thereby described diaphragm configuration move and the volume of change chamber for the exciting force in response to being applied to described barrier film;
Driver, is configured to cause in response to the electric control signal carrying in integrated circuit that barrier film is with respect to the movement of cavity, thereby changes the gaseous tension of the volume of chamber and the generation chamber interior different from the gaseous tension of chamber outside; And
Sensor, is configured to detect in response to volume change the characteristic based on frequency of barrier film, and the indication of gaseous tension in chamber is provided.
2. equipment according to claim 1, wherein said sensor is configured to:
By detecting frequency, detect the characteristic based on frequency of barrier film, wherein, more than described frequency, at least one in barrier film amplitude and barrier film phase place starts to decline; And
Frequency based on detecting provides the indication of pressure in chamber.
3. equipment according to claim 1, wherein said sensor is configured to:
By encouraging barrier film under concrete frequency when, detect the amplitude of barrier film and at least one in phase place, detect the characteristic based on frequency of barrier film; And
Amplitude under concrete frequency based on detecting and at least one in phase place provide the indication of pressure in chamber.
4. equipment according to claim 1, wherein said sensor is configured to:
By detecting the resonance frequency of barrier film with respect to the skew of the resonance frequency under reference pressure, detect the characteristic based on frequency of barrier film; And
The skew of the resonance frequency based on detecting provides the indication of pressure in chamber.
5. equipment according to claim 1, when wherein said sensor is configured to the frequency excitation barrier film below the resonance frequency with barrier film, the viscosity based on gas and the flow resistance of opening provide the indication of pressure in chamber.
6. equipment according to claim 1, wherein
Described diaphragm configuration is for to flow through gas with the pressure between the gas in balance chamber and the gas of chamber outside via opening below threshold frequency, and is configured to alleviate all in fact air-flows via opening more than threshold frequency;
Described actuator arrangement for periodically encouraging barrier film more than threshold frequency; And
Described sensor is configured to periodically to encourage more than threshold frequency the characteristic based on frequency that detects barrier film in barrier film, and the characteristic based on frequency detecting has been indicated the pressure of chamber outside.
7. equipment according to claim 1, wherein said sensor is configured to:
By detecting barrier film, in response to the deflection of volume change, detect the characteristic of barrier film; And
The indication of pressure in chamber is provided with the deflection detecting.
8. equipment according to claim 1, wherein:
Described actuator arrangement setovers to encourage barrier film for the excitation becoming when applying to barrier film, causes the movement of barrier film; And
Described sensor is configured to setover to detect based on described excitation the deflection of barrier film.
9. equipment according to claim 1, wherein:
Described actuator arrangement is by causing that under the resonance frequency of barrier film the periodicity movement of barrier film causes the movement of barrier film; And
Described sensor is configured to:
By detecting barrier film when the moving regulator periodically, in response to the increase of the resonance frequency of volume change, detect the characteristic of barrier film; And
The indication of pressure in chamber is provided by detected resonance frequency.
10. equipment according to claim 9, wherein said actuator arrangement is for utilizing Sing plus to encourage described barrier film, and described sensor is configured to detect barrier film in response to the resonance frequency of described Sing plus.
11. equipment according to claim 1, wherein said sensor is configured to:
The damping of moving in response to barrier film by detection barrier film detects the characteristic of barrier film; And
The indication of pressure in chamber is provided with the damping detecting.
12. equipment according to claim 11, wherein said actuator arrangement is for utilizing Sing plus excitation barrier film, and described sensor is configured for detection barrier film in response to the damping of described Sing plus.
13. equipment according to claim 1, wherein said sensor is configured to for the response of volume change, detect the characteristic of barrier film by detecting barrier film, so that the indication to the pressure in chamber and the pressure differential between the pressure outside chamber to be provided.
14. equipment according to claim 1, wherein said sensor is configured to by the balancing speed of gas in detection chambers and uses detected speed to determine the indication to the number of gas molecule in chamber, detects the characteristic based on frequency.
15. equipment according to claim 1, number and size that wherein said sensor is configured to based on a plurality of openings detect the characteristic based on frequency.
16. equipment according to claim 1, wherein
Described actuator arrangement, for by encouraging described barrier film with the gas in compression and expansion chamber periodically on a plurality of cycles, causes that barrier film is with respect to the movement of cavity; And
The time average environmental pressure that described sensor is configured to by calculating in a plurality of cycle upper chamber detects the characteristic based on frequency.
17. equipment according to claim 1, wherein said sensor is configured to, by detecting the spring constant of barrier film and the indication of gaseous tension in chamber being provided with the spring constant of detection, detect the characteristic based on frequency.
18. equipment according to claim 1, wherein said a plurality of openings comprise that diameter is less than at least one among the air vent of 2nm at the air vent between about 100nm and 2000nm and diameter.
19. equipment according to claim 1, indication and the excitation input for causing that barrier film moves based on providing via driver based on gaseous tension is provided wherein said sensor, determines the gaseous tension of chamber interior.
20. 1 kinds of integrated circuit pressure transducers, comprising:
Gas chamber, has the wall that is configured to hold gas, and described wall comprises barrier film, thereby described barrier film has electrode and is configured in response to the biasing that is applied to electrode and mobile and change the volume of chamber, and described barrier film has a plurality of openings, and described opening is configured to:
Via described opening flowing gas with the pressure between the outside gas of the gas in balance chamber and chamber,
When encouraging described barrier film below threshold frequency, make gas inflow and outflow chamber, and
In response to encourage described barrier film more than threshold frequency, alleviate all in fact air-flows via opening;
Divider chain, the excitation becoming when thering is electrode and being configured to apply to barrier film via electrode biasing, periodically to encourage barrier film, and the volume of compression and expansion chamber; And
Sensor, is configured to:
In response to described divider chain, under the resonance frequency of barrier film, encourage described barrier film, the impedance based between electrode detects the skew of the resonance frequency of barrier film, and the skew of the resonance frequency based on detecting provides the indication of pressure in chamber, and
In response to described divider chain excitation barrier film and pump air, pass through opening, the viscous flow of the gas based on by described opening provides the indication of pressure in chamber.
21. equipment according to claim 20, wherein said sensor is configured to provide based on following at least one indication of pressure in chamber: frequency when barrier film amplitude starts to decline; And via the impedance between electrode barrier film amplitude or phase place represented, under concrete frequency.
22. 1 kinds of pressure sensor apparatus, comprising:
The chamber with sidewall;
Barrier film; described barrier film forms one of sidewall and has a plurality of openings; described opening is configured to have such opening size: when encouraging described barrier film more than resonance frequency; prevent that all in fact air-flows are by described opening; and when encouraging described barrier film below resonance frequency, be convenient to air-flow by described opening;
Driver, is configured to periodically to encourage described barrier film with the gas in compression and expansion cavity promptly; And
Sensor, is configured to detect described barrier film in response to the characteristic based on frequency of periodic excitation, and the characteristic based on frequency based on detecting provides the output that has represented barrier film place pressure.
The method of 23. 1 kinds of manufacturing integration circuit arrangements, described method comprises:
Formation has the integrated circuit substrate of cavity;
The barrier film that formation suspends; the described barrier film suspending forms the wall of chamber; described chamber is at least in part in described cavity and have for holding the variable-volume of gas; and in described barrier film, form a plurality of openings and pass in and out described chamber to transmit gas, thereby described diaphragm configuration move and the volume of change chamber for the exciting force in response to being applied to described barrier film;
Form driver, described exciter response causes that in the electric control signal carrying in integrated circuit barrier film is with respect to the movement of cavity, thereby changes the gaseous tension of the volume of chamber and the generation chamber interior different from the gaseous tension of chamber outside; And
Form sensor, described sensor detects barrier film in response to the characteristic based on frequency of volume change, and the indication of gaseous tension in chamber is provided.
24. methods according to claim 23,
Wherein form the barrier film suspending and comprise the barrier film that forms a plurality of openings with different size;
Described method also comprises: the sacrifice etching of carrying out the material below described barrier film via described a plurality of openings; And
After carrying out sacrifice etching, apply sealant to seal at least some in described opening.
25. methods according to claim 24, wherein applying sealant comprises with at least some that seal in described opening: apply sealant to seal the opening of size below threshold size in described opening, and reduce the size of the opening of size more than threshold size.
CN201310369763.9A 2012-08-23 2013-08-22 Pressure transducer Active CN103630286B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/592,570 2012-08-23
US13/592,570 US8833171B2 (en) 2012-08-23 2012-08-23 Pressure sensor

Publications (2)

Publication Number Publication Date
CN103630286A true CN103630286A (en) 2014-03-12
CN103630286B CN103630286B (en) 2016-01-06

Family

ID=48986040

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310369763.9A Active CN103630286B (en) 2012-08-23 2013-08-22 Pressure transducer

Country Status (3)

Country Link
US (1) US8833171B2 (en)
EP (1) EP2700928B1 (en)
CN (1) CN103630286B (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104949790A (en) * 2014-03-31 2015-09-30 英飞凌科技股份有限公司 Dynamic pressure sensor
CN105783995A (en) * 2016-03-24 2016-07-20 北京航空航天大学 MEMS (Micro-Electro-Mechanical System) sensor and MEMS sensor-based thermodynamic parameter measurement method
CN106255020A (en) * 2016-09-13 2016-12-21 北京塞宾科技有限公司 A kind of microphone including molybdenum bisuphide material vibrating diaphragm
CN106255021A (en) * 2016-09-13 2016-12-21 北京塞宾科技有限公司 A kind of molybdenum bisuphide vibrating diaphragm microphone
CN107359235A (en) * 2017-08-14 2017-11-17 中北大学 A kind of graphene pressure sensor
CN111272316A (en) * 2020-02-11 2020-06-12 河海大学 Embedded prestressed anchor cable anchoring force detection device and detection method
CN113252230A (en) * 2015-07-20 2021-08-13 美国血液技术公司 Device for measuring pressure in a fluid path
CN113550891A (en) * 2020-04-24 2021-10-26 研能科技股份有限公司 Actuation sensing module
TWI833802B (en) * 2018-09-26 2024-03-01 奧地利商Ａｍｓ有限公司 Integrated optical transducer and method for fabricating an integrated optical transducer

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8503699B2 (en) * 2011-06-01 2013-08-06 Infineon Technologies Ag Plate, transducer and methods for making and operating a transducer
EP2637007B1 (en) 2012-03-08 2020-01-22 ams international AG MEMS capacitive pressure sensor
DE102012215239B4 (en) * 2012-08-28 2023-12-21 Robert Bosch Gmbh Component and method for testing such a component
US9759700B2 (en) * 2012-11-30 2017-09-12 Empire Technology Development Llc Gas detection device with graphene membrane
DE102012112862B4 (en) 2012-12-21 2023-11-02 Pfeiffer Vacuum Gmbh Device for measuring a pressure with at least one pressure sensor with at least one active sensor surface
US9880063B2 (en) * 2013-03-13 2018-01-30 Invensense, Inc. Pressure sensor stabilization
US9516428B2 (en) * 2013-03-14 2016-12-06 Infineon Technologies Ag MEMS acoustic transducer, MEMS microphone, MEMS microspeaker, array of speakers and method for manufacturing an acoustic transducer
DE102013114734A1 (en) * 2013-12-20 2015-07-09 Endress + Hauser Gmbh + Co. Kg Capacitive pressure cell with at least one temperature sensor and pressure measuring method
US9309105B2 (en) * 2014-03-06 2016-04-12 Infineon Technologies Ag Sensor structure for sensing pressure waves and ambient pressure
US9513184B2 (en) 2014-06-11 2016-12-06 Ams International Ag MEMS device calibration
US9340412B2 (en) * 2014-07-28 2016-05-17 Ams International Ag Suspended membrane for capacitive pressure sensor
DE102014217153A1 (en) * 2014-08-28 2015-12-03 Robert Bosch Gmbh MEMS device with a pressure-sensitive membrane
US9778238B2 (en) * 2014-09-09 2017-10-03 Ams International Ag Resonant CO2 sensing with mitigation of cross-sensitivities
US10444103B2 (en) * 2014-11-11 2019-10-15 Ams International Ag Method and apparatus for calibrating pressure sensor integrated circuit devices
RU2584380C1 (en) * 2015-02-03 2016-05-20 Акционерное общеcтво "Научно-исследовательский институт физических измерений" Pressure measuring device
JP6433357B2 (en) * 2015-03-26 2018-12-05 株式会社オーディオテクニカ Boundary microphone
KR102519055B1 (en) * 2015-11-03 2023-04-07 삼성전자주식회사 Apparatus for producing carbonated water, Refrigerator having the same and method for controlling the same
GB201519620D0 (en) 2015-11-06 2015-12-23 Univ Manchester Device and method of fabricating such a device
TWI598575B (en) * 2016-05-27 2017-09-11 美律實業股份有限公司 Air pressure sensing apparatus and air pressure sensing method
EP3279630B1 (en) * 2016-08-03 2019-06-26 ams AG Pressure sensor module
CN107799386B (en) * 2016-09-06 2020-04-28 中芯国际集成电路制造(北京)有限公司 Semiconductor device and method for manufacturing the same
EP3301425B1 (en) 2016-09-30 2021-01-20 Sciosense B.V. Pressure sensor device and method for forming a pressure sensor device
EP3301072B1 (en) 2016-09-30 2024-02-21 Sciosense B.V. Semiconductor device and method for forming a semiconductor device
DE102017100894B4 (en) * 2017-01-18 2019-12-12 Infineon Technologies Ag Method of forming a graphene membrane device, graphene membrane device, microphone and Hall sensor
EP3376778B8 (en) * 2017-03-13 2020-08-12 ams International AG Microphone and method of testing a microphone
US10623867B2 (en) 2017-05-01 2020-04-14 Apple Inc. Combined ambient pressure and acoustic MEMS sensor
CN107271332B (en) * 2017-07-04 2019-10-11 西安交通大学 A kind of MEMS fluid viscosity sensor chip and preparation method thereof based on face interior resonance
CN107436205B (en) * 2017-08-14 2023-10-13 中北大学 On-chip temperature compensation graphene pressure sensor
CN107941385B (en) * 2017-08-14 2023-12-08 中北大学 Pressure sensor based on graphene piezoresistance junction
GB2569810A (en) * 2017-12-27 2019-07-03 Nokia Technologies Oy An apparatus for sensing comprising a microphone arrangement
EP3653567B1 (en) 2018-11-19 2024-01-10 Sciosense B.V. Method for manufacturing an integrated mems transducer device and integrated mems transducer device
US12091313B2 (en) 2019-08-26 2024-09-17 The Research Foundation For The State University Of New York Electrodynamically levitated actuator
RU193737U1 (en) * 2019-09-02 2019-11-12 Общество с ограниченной ответственностью "БУТИС" HIGH TEMPERATURE SENSITIVE ELEMENT ON SURFACE ACOUSTIC WAVES
RU199339U1 (en) * 2020-05-25 2020-08-28 Акционерное общество "Аэроприбор-Восход" Frequency pressure sensor
NL2026284B1 (en) 2020-08-18 2022-04-14 Univ Delft Tech MEMS-based microphone and microphone assembly
US20220411259A1 (en) * 2021-06-25 2022-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Impact-resistant micromechanical arms
CN113993049B (en) * 2021-08-26 2022-05-27 地球山(北京)科技有限公司 MEMS digital loudspeaker design method
WO2024088540A1 (en) * 2022-10-27 2024-05-02 Vat Holding Ag Gas type compensation for mems device
CN116593059B (en) * 2023-07-19 2023-11-10 宁德时代新能源科技股份有限公司 Sensor, manufacturing method, battery cell, battery and electricity utilization device
CN116986550B (en) * 2023-09-26 2023-11-28 苏州敏芯微电子技术股份有限公司 Airflow sensor and airflow sensor packaging structure

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3818765A (en) * 1971-02-17 1974-06-25 Sentralinst For Ind Forskning Device for sterile measurement of liquid or gas pressures
CN87104354A (en) * 1986-06-23 1988-01-20 罗斯蒙德公司 Capacitive pressure transducer
JPH0868709A (en) * 1994-08-31 1996-03-12 Matsushita Electric Ind Co Ltd Gas pressure sensor
CN101153826A (en) * 2006-09-19 2008-04-02 新科实业有限公司 Air pressure sensor
CN102569179A (en) * 2006-04-18 2012-07-11 气体产品与化学公司 Materials and methods of forming controlled voids in dielectric layers

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5142912A (en) 1990-06-15 1992-09-01 Honeywell Inc. Semiconductor pressure sensor
US5528939A (en) * 1995-03-21 1996-06-25 Martin; Jacob H. Micromechanical pressure gauge having extended sensor range
US5939635A (en) * 1997-12-02 1999-08-17 Varian Inc. Micromechanical pressure sensor-with improved range
US5955659A (en) * 1998-01-13 1999-09-21 Massachusetts Institute Of Technology Electrostatically-actuated structures for fluid property measurements and related methods
DE10034390C2 (en) * 2000-07-14 2003-06-26 Eads Deutschland Gmbh Pressure sensor and method for its production, and internal combustion engine with pressure sensor
US7047810B2 (en) * 2003-01-15 2006-05-23 Ahura Corporation Micro-electro-mechanical pressure sensor
US7176048B1 (en) 2004-12-12 2007-02-13 Burns David W Optically coupled sealed-cavity resonator and process
US7322803B2 (en) * 2004-12-30 2008-01-29 Adaptivenergy, Llc. Pumps with diaphragms bonded as bellows
EP1719993A1 (en) * 2005-05-06 2006-11-08 STMicroelectronics S.r.l. Integrated differential pressure sensor and manufacturing process thereof
US8627726B2 (en) 2007-06-04 2014-01-14 Nxp, B.V. Pressure gauge
WO2009138919A1 (en) 2008-05-12 2009-11-19 Nxp B.V. Mems devices
EP2286431A1 (en) 2008-06-06 2011-02-23 Nxp B.V. Mems switch and fabrication method
EP2249365A1 (en) 2009-05-08 2010-11-10 Nxp B.V. RF MEMS switch with a grating as middle electrode
EP2309241B1 (en) * 2009-10-07 2016-11-30 ams international AG MEMS pressure sensor
EP2402284A1 (en) 2010-06-29 2012-01-04 Nxp B.V. MEMS manufacturing method
US9016133B2 (en) 2011-01-05 2015-04-28 Nxp, B.V. Pressure sensor with pressure-actuated switch

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3818765A (en) * 1971-02-17 1974-06-25 Sentralinst For Ind Forskning Device for sterile measurement of liquid or gas pressures
CN87104354A (en) * 1986-06-23 1988-01-20 罗斯蒙德公司 Capacitive pressure transducer
JPH0868709A (en) * 1994-08-31 1996-03-12 Matsushita Electric Ind Co Ltd Gas pressure sensor
CN102569179A (en) * 2006-04-18 2012-07-11 气体产品与化学公司 Materials and methods of forming controlled voids in dielectric layers
CN101153826A (en) * 2006-09-19 2008-04-02 新科实业有限公司 Air pressure sensor

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104949790A (en) * 2014-03-31 2015-09-30 英飞凌科技股份有限公司 Dynamic pressure sensor
US10393606B2 (en) 2014-03-31 2019-08-27 Infineon Technologies Ag Dynamic pressure sensor
CN113252230A (en) * 2015-07-20 2021-08-13 美国血液技术公司 Device for measuring pressure in a fluid path
CN105783995A (en) * 2016-03-24 2016-07-20 北京航空航天大学 MEMS (Micro-Electro-Mechanical System) sensor and MEMS sensor-based thermodynamic parameter measurement method
CN105783995B (en) * 2016-03-24 2017-12-19 北京航空航天大学 MEMS sensor, the thermal parameter measuring method based on MEMS sensor
CN106255020A (en) * 2016-09-13 2016-12-21 北京塞宾科技有限公司 A kind of microphone including molybdenum bisuphide material vibrating diaphragm
CN106255021A (en) * 2016-09-13 2016-12-21 北京塞宾科技有限公司 A kind of molybdenum bisuphide vibrating diaphragm microphone
CN106255021B (en) * 2016-09-13 2020-04-10 北京塞宾科技有限公司 Molybdenum disulfide vibrating diaphragm microphone, cell-phone, computer and earphone
CN106255020B (en) * 2016-09-13 2020-04-14 北京塞宾科技有限公司 Microphone, mobile phone, computer and earphone comprising molybdenum disulfide material diaphragm
CN107359235A (en) * 2017-08-14 2017-11-17 中北大学 A kind of graphene pressure sensor
CN107359235B (en) * 2017-08-14 2023-10-03 中北大学 Graphene pressure sensor
TWI833802B (en) * 2018-09-26 2024-03-01 奧地利商Ａｍｓ有限公司 Integrated optical transducer and method for fabricating an integrated optical transducer
CN111272316B (en) * 2020-02-11 2021-04-06 河海大学 Embedded prestressed anchor cable anchoring force detection device and detection method
CN111272316A (en) * 2020-02-11 2020-06-12 河海大学 Embedded prestressed anchor cable anchoring force detection device and detection method
CN113550891A (en) * 2020-04-24 2021-10-26 研能科技股份有限公司 Actuation sensing module
CN113550891B (en) * 2020-04-24 2022-10-25 研能科技股份有限公司 Actuation sensing module

Also Published As

Publication number Publication date
US20140053651A1 (en) 2014-02-27
EP2700928A3 (en) 2017-08-23
US8833171B2 (en) 2014-09-16
EP2700928B1 (en) 2020-04-22
CN103630286B (en) 2016-01-06
EP2700928A2 (en) 2014-02-26

Similar Documents

Publication Publication Date Title
CN103630286B (en) Pressure transducer
US9383285B2 (en) MEMS resonator pressure sensor
US9772245B2 (en) MEMS capacitive pressure sensor
JP5778619B2 (en) Pressure sensor
CN102032970B (en) Mems pressure sensor
CN102768093B (en) MEMS capacitive pressure sensor, operational approach and manufacture method
CN203772280U (en) Integrated detecting structure and related resonator sensor equipment
JP5649810B2 (en) Capacitive sensor
JP5497746B2 (en) Inertial sensor and manufacturing method thereof
US8593155B2 (en) MEMS in-plane resonators
US20220153572A1 (en) Fet based sensory systems
US20140265720A1 (en) Methods and devices relating to capacitive micromachined diaphragms and transducers
US20140305208A1 (en) MEMS Inertial Sensor and Method of Inertial Sensing
KR20120029039A (en) Bulk acoustic wave resonator sensor
US9726562B2 (en) Pressure sensor made from nanogauges coupled to a resonator
Eswaran et al. Sensitivity analysis on MEMS capacitive differential pressure sensor with bossed diaphragm membrane
WO2018096215A1 (en) Sensor
JP4864438B2 (en) System and method for sensing pressure
Sparks et al. A portable MEMS Coriolis mass flow sensor
Qaradaghi et al. Frequency output MEMS resonator on membrane pressure sensors
Ramezany et al. Sail-shaped piezoelectric micro-resonators for high resolution gas flowmetry
Dolleman Graphene based pressure sensors: Resonant pressure transduction using atomically thin materials
Dolleman Graphene based pressure sensors
US20190346409A1 (en) Sensor
TW202417824A (en) Gas type compensation for mems device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: AMS INTERNATIONAL LTD.

Free format text: FORMER OWNER: KONINKL PHILIPS ELECTRONICS NV

Effective date: 20150814

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20150814

Address after: La Ville de Perth

Applicant after: AMS INTERNATIONAL CO., LTD.

Address before: Holland Ian Deho Finn

Applicant before: Koninkl Philips Electronics NV

C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20220328

Address after: Eindhoven

Patentee after: Theo Testing Co.,Ltd.

Address before: La Ville, Perth, Switzerland

Patentee before: AMS INTERNATIONAL AG