CN103572271B - Utilize pressure reduction in the device of microchannel plate side wall deposition film and using method - Google Patents
Utilize pressure reduction in the device of microchannel plate side wall deposition film and using method Download PDFInfo
- Publication number
- CN103572271B CN103572271B CN201310485699.0A CN201310485699A CN103572271B CN 103572271 B CN103572271 B CN 103572271B CN 201310485699 A CN201310485699 A CN 201310485699A CN 103572271 B CN103572271 B CN 103572271B
- Authority
- CN
- China
- Prior art keywords
- microchannel plate
- negative pressure
- malleation chamber
- pressure cavity
- sol liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Chemically Coating (AREA)
Abstract
The invention discloses a kind of pressure reduction that utilizes in the device of microchannel plate side wall deposition film and using method.It comprises malleation chamber and negative pressure cavity, is communicating passage, malleation chamber and negative pressure cavity are respectively equipped with inlet mouth and air outlet between described malleation chamber and negative pressure cavity; The mid-way of communicating passage is provided with the Kato of fixing microchannel plate; Sol liquid is marked with in described malleation chamber and negative pressure cavity.The present invention utilizes the pressure difference of microchannel plate both sides, realizes the flowing of sol liquid in microchannel of required deposited thin film material, then carries out pyroprocessing to the colloidal sol sticked on the sidewall of microchannel, thus realize the deposition of film on microchannel plate sidewall.The film thickness of monolayer deposition, depends on the pressure difference of collosol concentration and microchannel plate both sides.The invention solves the difficult problem making the sol liquid of required deposited thin film material realize directed flow in the microchannel of narrow dimension, and then achieve the deposition of its thin-film material on microchannel plate sidewall.
Description
Technical field
The present invention relates to a kind of pressure reduction that utilizes at the devices and methods therefor of microchannel plate side wall deposition film, belong to micro electro mechanical system field.
Background technology
Microchannel plate, due to its special structure, can be widely used in the every field such as photomultiplier transit, super capacitor, lithium ion battery, gas sensor.In various applications, an important step is exactly at the various functional materials of the deposited on sidewalls of microchannel plate.Existing technology comprises chemical Vapor deposition process (CVD), atomic layer deposition method (ALD), electrochemical plating (Electroplating) and sol-gel method (Sol-Gel).Chemical Vapor deposition process and atomic layer deposition method all need machinery equipment costly, and cost is higher; Electrochemical plating need the situation depositing functional materials on an insulating substrate helpless for some; Sol-gel method needs sol liquid to cover substrate surface completely, but in microchannel plate, surface tension in catwalk becomes essential factor, sol liquid is difficult to cover sidewall surfaces completely by narrow and small passage, the bubble of inside microchannels can stop liquid further to flow into, therefore, sol liquid how is allowed successfully to become a difficult point in the flowing of microchannel plate inwall.
Summary of the invention
The object of this invention is to provide a kind of pressure reduction that utilizes at the devices and methods therefor of microchannel plate side wall deposition film.To solve the problems referred to above of prior art.
The object of the invention is to be achieved through the following technical solutions:
Utilize pressure reduction at a device for microchannel plate side wall deposition film, comprise malleation chamber and negative pressure cavity, be communicating passage between described malleation chamber and negative pressure cavity, malleation chamber and negative pressure cavity are respectively equipped with inlet mouth and air outlet; The mid-way of communicating passage is provided with the Kato of fixing microchannel plate; Sol liquid is marked with in described malleation chamber and negative pressure cavity.
When described malleation chamber and negative pressure cavity horizontal positioned, described inlet mouth and air outlet are arranged at the top of malleation chamber and negative pressure cavity, and the height of sol liquid is higher than microchannel plate longitudinal length.
This pressure reduction that utilizes is in the using method of the device of microchannel plate side wall deposition film:
(1) microchannel plate is cut into the shape size coincide with Kato cross section;
(2) microchannel plate put into Kato and fixed;
(3) sol liquid of required deposited thin film material is poured into from malleation chamber;
(4) from inlet mouth injecting compressed air, or air pump is utilized to deflate from air outlet, or both dual-purposes, utilize the pressure difference of microchannel plate both sides, make sol liquid flow into negative pressure cavity from malleation chamber by the inside pipeline of microchannel plate;
(5) pour out sol liquid, take out microchannel plate;
(6) pyroprocessing is carried out to microchannel plate, thus realize the deposition of film on microchannel plate sidewall;
(7) this process approach repeatedly recycles, i.e. multilayer sol-gel method, until realize pre-determined thickness.
When described malleation chamber and negative pressure cavity are placed up and down, malleation chamber is above negative pressure cavity, and described inlet mouth and air outlet are arranged at malleation chamber respectively above negative pressure cavity; Described sol liquid flows into the negative pressure cavity of below from the malleation chamber of top, and remaining sol liquid is contained in below cavity bottom.It is pointed out that above-mentioned inlet mouth and air outlet can both all use, also can only with wherein any one, another mouth communicates with air.
This pressure reduction that utilizes is in the using method of the device of microchannel plate side wall deposition film:
(1) microchannel plate is cut into the shape size coincide with Kato cross section;
(2) microchannel plate put into Kato and fixed;
(3) sol liquid of required deposited thin film material is poured into from malleation chamber;
(4) from inlet mouth injecting compressed air, or air pump is utilized to deflate from air outlet, or both dual-purposes, utilize the pressure difference of microchannel plate both sides, make sol liquid flow into negative pressure cavity from malleation chamber by the inside pipeline of microchannel plate;
(5) pour out sol liquid, take out microchannel plate;
(6) pyroprocessing is carried out to microchannel plate, thus realize the deposition of film on microchannel plate sidewall;
(7) this process approach repeatedly recycles, i.e. multilayer sol-gel method, until realize pre-determined thickness.
The present invention utilizes the pressure difference of microchannel plate both sides, realizes the flowing of sol liquid in microchannel of required deposited thin film material, then carries out pyroprocessing to the colloidal sol sticked on the sidewall of microchannel, thus realize the deposition of film on microchannel plate sidewall.The film thickness of monolayer deposition, depends on the pressure difference of collosol concentration and microchannel plate both sides.For reaching certain thickness thin film deposition, repeatedly can recycle this process approach, i.e. multilayer sol-gel method, until realize pre-determined thickness.The apparatus structure of pressure differential method, according to the flow direction of sol liquid, can be divided into cross flow type structure and longitudinal flow type structure.
The invention has the beneficial effects as follows: make the sol liquid of required deposited thin film material realize directed flow in the microchannel of narrow dimension, and then realize the deposition of its film on microchannel plate sidewall.
Accompanying drawing explanation
Fig. 1 is the pressure differential method apparatus structure schematic diagram of cross flow type structure.
Fig. 2 is the pressure differential method apparatus structure schematic diagram of longitudinal flow type structure.
All schematic diagram are not all equal proportions above.
Fig. 3 is silicon microchannel plate framework material side-view.
Fig. 4 is silicon microchannel plate framework material vertical view.
Fig. 5 is the deposit trial-production of silicon micro-channel sidewall semiconductor-on-insulator thin-film material.
In figure: 1, malleation chamber 2, negative pressure cavity 3, communicating passage 4, Kato 5, microchannel plate 6, inlet mouth 7, air outlet.
Embodiment
Technical characterstic of the present invention is set forth further below in conjunction with accompanying drawing and specific embodiment.
As depicted in figs. 1 and 2, sets forth the pressure differential method apparatus structure schematic diagram of cross flow type structure and longitudinal flow type structure.
In Fig. 1, a kind of pressure reduction that utilizes, at the device of microchannel plate side wall deposition film, comprises malleation chamber 1 and negative pressure cavity 2, is communicating passage 3 between described malleation chamber 1 and negative pressure cavity 2, and malleation chamber 1 and negative pressure cavity 2 are respectively equipped with inlet mouth 6 and air outlet 7; The mid-way of communicating passage 3 is provided with the Kato 4 of fixing microchannel plate 5; Sol liquid is marked with in described malleation chamber 1 and negative pressure cavity 2.Described malleation chamber 1 and negative pressure cavity 2 horizontal positioned; Described inlet mouth 6 and air outlet 7 are arranged at the top of malleation chamber 1 and negative pressure cavity 2, and the height of sol liquid is higher than microchannel plate 5 longitudinal length.
In Fig. 2, a kind of pressure reduction that utilizes, at the device of microchannel plate side wall deposition film, comprises malleation chamber 1 and negative pressure cavity 2, is communicating passage 3 between described malleation chamber 1 and negative pressure cavity 2, and malleation chamber 1 and negative pressure cavity 2 are respectively equipped with inlet mouth 6 and air outlet 7; The mid-way of communicating passage 3 is provided with the Kato 4 of fixing microchannel plate 5; Sol liquid is marked with in described malleation chamber 1 and negative pressure cavity 2.Described malleation chamber 1 and negative pressure cavity about 2 are placed, and malleation chamber 1 is above negative pressure cavity 2, and described inlet mouth 6 and air outlet 7 are arranged at malleation chamber 1 respectively above negative pressure cavity 2; Described sol liquid flows into the negative pressure cavity 2 of below from the malleation chamber 1 of top, and remaining sol liquid is contained in bottom the negative pressure cavity 2 of below.It is pointed out that above-mentioned inlet mouth 6 and air outlet 7 can both all use, also can only with wherein any one, another mouth communicates with air.
Respectively provide a specific embodiment in conjunction with these two structures respectively below, the present invention is further described.
Embodiment 1: described malleation chamber and negative pressure cavity horizontal positioned structure
(1) microchannel plate 5 is cut into the shape size that middle Kato 4 cross section coincide with Fig. 1 bottom of device;
(2) microchannel plate 5 put into Kato 4 and fixed;
(3) sol liquid of required deposited thin film material is poured into from malleation chamber 1;
(4) from inlet mouth 6 injecting compressed air, or air pump is utilized to deflate from air outlet 7, or both dual-purposes, utilize the pressure difference of microchannel plate 5 both sides, make sol liquid flow into negative pressure cavity 2 from malleation chamber 1 by the inside pipeline of microchannel plate 5;
(5) pour out sol liquid, take out microchannel plate 5;
(6) pyroprocessing is carried out to microchannel plate 5, thus realize the deposition of film on microchannel plate 5 sidewall;
(7) this process approach repeatedly recycles, i.e. multilayer sol-gel method, until realize pre-determined thickness.
Embodiment 2: described malleation chamber and the upper and lower displacement structure of negative pressure cavity
(1) microchannel plate 5 is cut into the shape size that middle Kato 4 cross section coincide with Fig. 2 device;
(2) microchannel plate 5 put into Kato 4 and fixed;
(3) sol liquid of required deposited thin film material is poured into from malleation chamber 1;
(4) from inlet mouth 6 injecting compressed air, or air pump is utilized to deflate from air outlet 7, or both dual-purposes, utilize the pressure difference of microchannel plate 5 both sides, make sol liquid flow into negative pressure cavity 2 from malleation chamber 1 by the inside pipeline of microchannel plate 5;
(5) pour out sol liquid, take out microchannel plate 5;
(6) pyroprocessing is carried out to microchannel plate 5, thus realize the deposition of film on microchannel plate 5 sidewall;
(7) this process approach repeatedly recycles, i.e. multilayer sol-gel method, until realize pre-determined thickness.
Fig. 3 and Fig. 4 is not at side-view and the vertical view of the silicon microchannel plate framework material of disposed on sidewalls film respectively.As can be seen from the figure, this silicon microchannel plate is of a size of the length of side 5 microns of x5 microns, dark 250 microns, sidewall thickness 1 micron, and use normal method, sol liquid is difficult to cover sidewall surfaces completely by narrow and small passage.Fig. 5 is the vertical view carried out semiconductor film material deposit trial-production on silicon micro-channel sidewall after.As can be seen from the figure, utilize pressure reduction in the apparatus and method of microchannel plate side wall deposition film, can on silicon micro-channel sidewall comparatively intactly deposit cover semiconductor-on-insulator film, concrete film thickness depends on the pressure difference of collosol concentration and microchannel plate both sides.
The present invention proposes a kind of pressure reduction that utilizes in the method for microchannel plate side wall deposition film, make the sol liquid of required deposited thin film material in the flowing of microchannel interior orientation, and then realize the deposition of its film on microchannel plate sidewall.
Claims (5)
1. utilize pressure reduction at a device for microchannel plate side wall deposition film, it is characterized in that: comprise malleation chamber and negative pressure cavity, be communicating passage between described malleation chamber and negative pressure cavity, malleation chamber and negative pressure cavity are respectively equipped with inlet mouth and air outlet; The mid-way of communicating passage is provided with the Kato of fixing microchannel plate; Sol liquid is marked with in described malleation chamber and negative pressure cavity.
2. a kind of pressure reduction that utilizes according to claim 1 is at the device of microchannel plate side wall deposition film, it is characterized in that: when described malleation chamber and negative pressure cavity horizontal positioned, described inlet mouth and air outlet are arranged at the top of malleation chamber and negative pressure cavity, and the height of sol liquid is higher than microchannel plate longitudinal length.
3. a kind of pressure reduction that utilizes according to claim 1 is at the device of microchannel plate side wall deposition film, it is characterized in that: when described malleation chamber and negative pressure cavity are placed up and down, malleation chamber is above negative pressure cavity, and described inlet mouth and air outlet are arranged at the top of malleation chamber and negative pressure cavity respectively; Described sol liquid flows into the negative pressure cavity of below from the malleation chamber of top, and remaining sol liquid is contained in below cavity bottom.
4. a kind of pressure reduction that utilizes, in the using method of the device of microchannel plate side wall deposition film, is characterized in that as claimed in claim 2:
(1) microchannel plate is cut into the shape size coincide with Kato cross section;
(2) microchannel plate put into Kato and fixed;
(3) sol liquid of required deposited thin film material is poured into from malleation chamber;
(4) from inlet mouth injecting compressed air, or air pump is utilized to deflate from air outlet, or both dual-purposes, utilize the pressure difference of microchannel plate both sides, make sol liquid flow into negative pressure cavity from malleation chamber by the inside pipeline of microchannel plate;
(5) pour out sol liquid, take out microchannel plate;
(6) pyroprocessing is carried out to microchannel plate, thus realize the deposition of film on microchannel plate sidewall;
(7) this process approach repeatedly recycles, i.e. multilayer sol-gel method, until realize pre-determined thickness.
5. a kind of pressure reduction that utilizes, in the using method of the device of microchannel plate side wall deposition film, is characterized in that as claimed in claim 3:
(1) microchannel plate is cut into the shape size coincide with Kato cross section;
(2) microchannel plate put into Kato and fixed;
(3) sol liquid of required deposited thin film material is poured into from malleation chamber;
(4) from inlet mouth injecting compressed air, or air pump is utilized to deflate from air outlet, or both dual-purposes, utilize the pressure difference of microchannel plate both sides, make sol liquid flow into negative pressure cavity from malleation chamber by the inside pipeline of microchannel plate;
(5) pour out sol liquid, take out microchannel plate;
(6) pyroprocessing is carried out to microchannel plate, thus realize the deposition of film on microchannel plate sidewall;
(7) this process approach repeatedly recycles, i.e. multilayer sol-gel method, until realize pre-determined thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310485699.0A CN103572271B (en) | 2013-10-16 | 2013-10-16 | Utilize pressure reduction in the device of microchannel plate side wall deposition film and using method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310485699.0A CN103572271B (en) | 2013-10-16 | 2013-10-16 | Utilize pressure reduction in the device of microchannel plate side wall deposition film and using method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103572271A CN103572271A (en) | 2014-02-12 |
| CN103572271B true CN103572271B (en) | 2016-03-02 |
Family
ID=50044961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310485699.0A Expired - Fee Related CN103572271B (en) | 2013-10-16 | 2013-10-16 | Utilize pressure reduction in the device of microchannel plate side wall deposition film and using method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103572271B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104289382B (en) * | 2014-07-10 | 2019-04-05 | 华东师范大学 | Using rotation suction method microchannel plate side wall deposition film method and its dedicated unit |
| CN104843636A (en) * | 2015-03-20 | 2015-08-19 | 华东师范大学 | Method and device for liquid flow deposition of film on inner wall of silicon micro-channel by utilizing improved differential pressure method |
| CN105502283A (en) * | 2015-12-07 | 2016-04-20 | 华东师范大学 | Method for depositing three-dimensional nano-film structure on side wall of microchannel plate by hydrothermal method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101484610A (en) * | 2005-10-13 | 2009-07-15 | 维罗西股份有限公司 | Electroless plating in microchannels |
| CN101538704A (en) * | 2009-03-20 | 2009-09-23 | 华东师范大学 | Method of electroless nickel plating on silicon substrate microchannel |
| CN101579632A (en) * | 2009-03-24 | 2009-11-18 | 华东师范大学 | Nickel palladium/ silicon microchannel catalyst and application thereof on preparing electrode of integratable direct methanol fuel cell |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006036193A1 (en) * | 2004-03-23 | 2006-04-06 | Velocys, Inc. | Micro-channel reactor with catalysts applied directly to thermally-grown alumina, methods using same and oxidative dehydrogenation |
-
2013
- 2013-10-16 CN CN201310485699.0A patent/CN103572271B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101484610A (en) * | 2005-10-13 | 2009-07-15 | 维罗西股份有限公司 | Electroless plating in microchannels |
| CN101538704A (en) * | 2009-03-20 | 2009-09-23 | 华东师范大学 | Method of electroless nickel plating on silicon substrate microchannel |
| CN101579632A (en) * | 2009-03-24 | 2009-11-18 | 华东师范大学 | Nickel palladium/ silicon microchannel catalyst and application thereof on preparing electrode of integratable direct methanol fuel cell |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103572271A (en) | 2014-02-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Whitby et al. | Enhanced fluid flow through nanoscale carbon pipes | |
| CN103572271B (en) | Utilize pressure reduction in the device of microchannel plate side wall deposition film and using method | |
| US9449787B2 (en) | Liquid flow cells having graphene on nitride for microscopy | |
| US9196457B2 (en) | Flow cells for electron microscope imaging with multiple flow streams | |
| US20150231536A1 (en) | Filter device | |
| WO2010124263A2 (en) | Electroosmotic pump | |
| JP2013517113A5 (en) | ||
| Phillips et al. | Directional wetting in anisotropic inverse opals | |
| CN105277724B (en) | A kind of micro flow control chip device and preparation method thereof | |
| Zheng et al. | Superwicking on nanoporous micropillared surfaces | |
| CN101497017B (en) | Microflow control structure | |
| Shen et al. | Improving the dielectric properties of an electrowetting-on-dielectric microfluidic device with a low-pressure chemical vapor deposited Si3N4 dielectric layer | |
| JP2015005331A (en) | Manufacturing method of sealed electrochemical device | |
| KR101871887B1 (en) | Active fluidic diode using asymmetric ion concentration polarization layer | |
| Wang et al. | Colloidal lithography-based fabrication of highly-ordered nanofluidic channels with an ultra-high surface-to-volume ratio | |
| US20170141135A1 (en) | Carrier substrate having a plurality of fluid passages and method of fabricating display apparatus utilizing the same | |
| JP2013222088A5 (en) | ||
| TWI793313B (en) | Water supply device and water supply method | |
| CN104289382B (en) | Using rotation suction method microchannel plate side wall deposition film method and its dedicated unit | |
| He et al. | Lateral porous silicon membranes with size and charge selectivity | |
| CN105948005A (en) | Method using polydimethyl siloxane to fast transfer black-phosphorus film | |
| CN108562544B (en) | Stretchable flexible liquid pool and manufacturing method thereof | |
| CN105502283A (en) | Method for depositing three-dimensional nano-film structure on side wall of microchannel plate by hydrothermal method | |
| KR101138468B1 (en) | Method for separating sample in fluid using microfluidic channel | |
| CN104843636A (en) | Method and device for liquid flow deposition of film on inner wall of silicon micro-channel by utilizing improved differential pressure method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160302 Termination date: 20191016 |