CN102974581A - Process for cleaning wafer box holding monocrystalline silicon polishing wafer - Google Patents
Process for cleaning wafer box holding monocrystalline silicon polishing wafer Download PDFInfo
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- CN102974581A CN102974581A CN2012105345659A CN201210534565A CN102974581A CN 102974581 A CN102974581 A CN 102974581A CN 2012105345659 A CN2012105345659 A CN 2012105345659A CN 201210534565 A CN201210534565 A CN 201210534565A CN 102974581 A CN102974581 A CN 102974581A
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Abstract
The invention relates to a packing technology for a monocrystalline silicon polishing wafer, in particular to a process for cleaning a wafer box holding a monocrystalline silicon polishing wafer. The process comprises the following steps that an Entegris non-disposable sheet box is cleaned by a rotary wafer box cleaning machine with deion water, thus a dry wafer box with a higher cleanness degree is realized, and the humidity of the cleaning machine is adjusted to 25 plus or minus 5 percent firstly; a temperature is adjusted to 90 plus or minus 10 DEG C; the flow rate of nitrogen is adjusted to 200 plus or minus 50 L/min; the temperature of nitrogen is adjusted to 120 plus or minus 20 DEG C, the cleaning process is divided into sixteen steps, and the wafer box is subjected to the processes of inward cleaning, outward cleaning, hot nitrogen blowing-in and hot nitrogen blowing-out respectively by the adoption of clockwise rotation and counterclockwise rotation, and the cleaning time, a rotation speed and implemented procedures are set for each step. The wafer box cleaned by the process is used for replacing the wafer box with a high cleanness degree, the cost of accessories with the high cleanness degree is saved, and the control on the surface of a silicon chip is enhanced. By the adoption of the process, a favorable position is occupied in the high developing and fierce marketing competition of semi-conductor industry.
Description
Technical field
The present invention relates to the packing technique of monocrystalline silicon wafer crystal polished silicon wafer, particularly a kind of Sheng is carried the cleaning of monocrystalline silicon wafer crystal polished silicon wafer film magazine.
Background technology
The particle of monocrystalline silicon wafer crystal polished silicon wafer adsorption can cause component graphics defective, epitaxy defect, affect the integrality of layout; be the biggest obstacle of high finished product rate, particularly during wafer bonding, introduce microgap; simultaneously also cause dislocation, affect bond strength and surface quality.Therefore, the control of silicon chip surface particle degree is the key of silicon wafer processing.The general main crystal growth → barreling → section → chamfering → grinding → corrosion → injury of back → back of the body envelope → trimming → polishing → cleaning → processes such as packing that comprise of the processing of Silicon Wafer polished silicon wafer.Silicon polishedly will carry out surface examination after clean drying again, and qualified silicon polishedly put into film magazine and encapsulate.Therefore, the cleanliness factor of film magazine is most important, has directly affected the product surface quality the when client uses.In order to guarantee that clean polished silicon wafer is not subject to secondary pollution, should implement strict management and control to the cleanliness factor of its packing box.
The main disposable film magazine of Ying Tege (Entegris) company production that adopts is packed in the industry at present.But in use often find, use this film magazine Proper Packing product to increase to some extent in placement a period of time rear surface granularity, and use the film magazine of high-cleanness, high to be unfavorable for reducing cost of supplementary product, therefore be not suitable with high speed development and the fierce market competition of semicon industry.
Summary of the invention
The objective of the invention is the present situation for the polished silicon wafer packing technique, a kind of process cleaning that Sheng simple, efficient, that cost is low is carried monocrystalline silicon wafer crystal polished silicon wafer film magazine is provided.The rotary film magazine cleaning machine of this process using STORM (TM) III cleans second-hand film magazine by the spray design of deionized water.
The present invention realizes by such technical scheme: a kind of Sheng is carried the cleaning of monocrystalline silicon wafer crystal polished silicon wafer film magazine, it is characterized in that, the non-disposable film magazine of Ying Tege company is cleaned by rotary film magazine cleaning machine with deionized water, with the film magazine of realizing that drying and cleanliness factor are higher, the humidity with cleaning machine transfers to 25 ± 5% first; Temperature transfers to 90 ± 10 ℃, nitrogen flow 200 ± 50L/min, 120 ± 20 ℃ of nitrogen temperatures, cleaning is divided into 16 steps, take respectively clockwise and be rotated counterclockwise film magazine is carried out interior to flushing; Export-oriented flushing; In blow hot nitrogen; Blow the hot nitrogen program outward, program such as the following table of scavenging period, rotating speed and execution that its each step is set:
Advantage of the present invention and effect: the non-disposable film magazine that utilizes Ying Tege (Entegris) company to provide replaces the higher disposable film magazine of price, and the film magazine cleaning machine of use adopts hot nitrogen but not compressed air, thereby has guaranteed the high-cleanness, high of film magazine.Owing to increased the at a high speed conversion frequency of (300rpm) and low speed (10rpm) nitrogen blowing, thereby guaranteed the degree of drying of film magazine, improved operating efficiency the duration of runs that has also reduced simultaneously program.This technique detects the film magazine internal environment with utilization liquid particles degree instrument respectively and take polished silicon wafer particle variable quantity as appraisal standards, the result of two kinds of method of testings is very desirable.
Adopt this technique through the film magazine of the alternative high-cleanness, high of film magazine after cleaning, not only saved the cost of high-cleanness, high auxiliary material, and strengthened the control of silicon chip surface particle.Can occupy catbird seat in high speed development and the fierce market competition of semicon industry.
Description of drawings
Fig. 1 is two kinds of film magazine particle level comparison diagrams after testing;
Among the figure: ■ represents the film magazine particle level of cleaning through the film magazine cleaning machine;
The film magazine particle level that expression is not cleaned through the film magazine cleaning machine.
The specific embodiment
Embodiment: 1) prepare the disposable film magazine of Ying Tegefei as packaging material.
2) open appliance doors according to by upper under order box at the bottom of, lid, the box heart (H faces down) be placed on the rack for cleaning.Notice that film magazine loads necessary Central Symmetry.
3) first the humidity of cleaning machine is transferred to 25%; Temperature transfers to 90 ℃; Nitrogen flow 200L/min; 120 ℃ of nitrogen temperatures, cleaning are divided into 16 steps, take respectively clockwise and be rotated counterclockwise film magazine is carried out interior to flushing; Export-oriented flushing; In blow hot nitrogen; Blow the hot nitrogen program outward, program such as the following table of scavenging period, rotating speed and execution that its each step is set:
4) adopt cleaned film magazine that 500 silicon chips of test passes are packed.Silicon chip is 6 inches, 625 μ m, and＜111〉crystal orientation, resistivity is 0.003-0.0035 Ω cm.
5) film magazine after will cleaning and load respectively deionized water (resistivity〉18M Ω cm) without the film magazine that cleans shakes up, and adopts liquid particles degree instrument to detect deionized water in two kinds of film magazines, and test result as shown in Figure 1.
6) to 500 polished silicon wafer of step 4) packing after leaving standstill 7 days, the repetition measurement product percent of pass reaches 100%.And after the polished silicon wafer that adopts the disposable film magazine of traditional Ying Tege packing left standstill 7 days, product retest-ok rate only was 88.94%.
In the present embodiment, detect the film magazine internal environment with liquid particles degree instrument and consider, illustrate that this cleaning method can remove effectively that second-hand film magazine is inner to stain and particle; Consider with polished silicon wafer particle variable quantity, illustrate that the film magazine packing polished silicon wafer surface particles degree that adopts this cleaning has obtained effective control.Therefore, this cleaning is a kind of new technology that the polished silicon wafer film magazine cleans that is applicable to.
According to the above description, can realize the solution of the present invention in conjunction with art technology.
Claims (1)
1. contain the cleaning of carrying monocrystalline silicon wafer crystal polished silicon wafer film magazine for one kind, it is characterized in that, the non-disposable film magazine of Ying Tege company is cleaned by rotary film magazine cleaning machine with deionized water, and with the film magazine of realizing that drying and cleanliness factor are higher, the humidity with cleaning machine transfers to 25 ± 5% first; Temperature transfers to 90 ± 10 ℃; Nitrogen flow 200 ± 50L/min; 120 ± 20 ℃ of nitrogen temperatures, cleaning are divided into 16 steps, take respectively clockwise and be rotated counterclockwise film magazine is carried out interior to flushing; Export-oriented flushing; In blow hot nitrogen; Blow the hot nitrogen program outward, program such as the following table of scavenging period, rotating speed and execution that its each step is set:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105345659A CN102974581A (en) | 2012-12-12 | 2012-12-12 | Process for cleaning wafer box holding monocrystalline silicon polishing wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105345659A CN102974581A (en) | 2012-12-12 | 2012-12-12 | Process for cleaning wafer box holding monocrystalline silicon polishing wafer |
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| Publication Number | Publication Date |
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| CN102974581A true CN102974581A (en) | 2013-03-20 |
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| CN2012105345659A Pending CN102974581A (en) | 2012-12-12 | 2012-12-12 | Process for cleaning wafer box holding monocrystalline silicon polishing wafer |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876295A (en) * | 2015-12-10 | 2017-06-20 | 有研半导体材料有限公司 | A kind of method of tenor test in silicon chip film magazine |
| CN109290321A (en) * | 2017-07-25 | 2019-02-01 | 春田科技顾问股份有限公司 | Blowing-out device and blowing-out method for loading port |
| CN112713083A (en) * | 2020-12-29 | 2021-04-27 | 杭州中欣晶圆半导体股份有限公司 | Method for reducing cleaning of wafer box on surface particles of silicon wafer during transportation |
| CN114453365A (en) * | 2022-01-18 | 2022-05-10 | 中环领先半导体材料有限公司 | Portable large-diameter silicon wafer box cleaning process |
| CN115502157A (en) * | 2022-10-12 | 2022-12-23 | 上海中欣晶圆半导体科技有限公司 | Cleaning and storing method for semiconductor silicon substrate piece packaging box |
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| US5846338A (en) * | 1996-01-11 | 1998-12-08 | Asyst Technologies, Inc. | Method for dry cleaning clean room containers |
| EP1182694A2 (en) * | 2000-08-23 | 2002-02-27 | Tokyo Electron Limited | Processing system for substrate |
| CN1938818A (en) * | 2004-02-05 | 2007-03-28 | 安格斯公司 | Purging of a wafer conveyance container |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876295A (en) * | 2015-12-10 | 2017-06-20 | 有研半导体材料有限公司 | A kind of method of tenor test in silicon chip film magazine |
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| CN109290321B (en) * | 2017-07-25 | 2021-03-19 | 春田科技顾问股份有限公司 | Blowing-out device and blowing-out method for loading port |
| CN112713083A (en) * | 2020-12-29 | 2021-04-27 | 杭州中欣晶圆半导体股份有限公司 | Method for reducing cleaning of wafer box on surface particles of silicon wafer during transportation |
| CN114453365A (en) * | 2022-01-18 | 2022-05-10 | 中环领先半导体材料有限公司 | Portable large-diameter silicon wafer box cleaning process |
| CN114453365B (en) * | 2022-01-18 | 2023-01-03 | 中环领先半导体材料有限公司 | Portable large-diameter silicon wafer box cleaning process |
| CN115502157A (en) * | 2022-10-12 | 2022-12-23 | 上海中欣晶圆半导体科技有限公司 | Cleaning and storing method for semiconductor silicon substrate piece packaging box |
| CN115502157B (en) * | 2022-10-12 | 2024-07-09 | 上海中欣晶圆半导体科技有限公司 | Cleaning and preserving method for packaging box of semiconductor silicon substrate slice |
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Application publication date: 20130320 |