CN102707542A - Method for regulating best matching state of type-II KDP (Potassium Dihydrogen Phosphate) crystal for frequency multiplication of infrared light - Google Patents
Method for regulating best matching state of type-II KDP (Potassium Dihydrogen Phosphate) crystal for frequency multiplication of infrared light Download PDFInfo
- Publication number
- CN102707542A CN102707542A CN2012101802890A CN201210180289A CN102707542A CN 102707542 A CN102707542 A CN 102707542A CN 2012101802890 A CN2012101802890 A CN 2012101802890A CN 201210180289 A CN201210180289 A CN 201210180289A CN 102707542 A CN102707542 A CN 102707542A
- Authority
- CN
- China
- Prior art keywords
- kdp crystal
- light
- aperture
- crystal
- kdp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a method for regulating best matching state of a type-II KDP crystal for frequency multiplication of infrared light. Adopted devices comprise a He-Ne light source, a pore aperture, a long-focus lens, a Rochon prism, a photoelectric probe and an oscilloscope. The method comprises the following steps of: firstly, roughly regulating a phase matching angle of the KDP crystal by using an auxiliary light source; secondly, focusing generated weak green lights on the Rochon prism via the long-focus lens, and regulating an azimuth angle of the KDP crystal according to the characteristics of the emergent light of the Rochon prism; and finally, regulating the phase matching angle of the KDP crystal by means of the photoelectric probe and the oscilloscope till the second frequency-multiplied output is the maximum. The method for regulating best matching state of the type-II KDP crystal for frequency multiplication of infrared light disclosed by the invention is characterized in that the azimuth angle of the KDP crystal is regulated by smartly utilizing the polarization detection characteristics of the Rochon prism and the KDP crystal is conveniently regulated in the weaker fundamental frequency light; the frequency multiplication efficiency of the KDP crystal is optimized and the polarization state of the frequency multiplication is guaranteed. The method for regulating best matching state of the type-II KDP crystal for frequency multiplication of infrared light disclosed by the invention has the characteristics of convenience in regulation, simpleness and high efficiency, and strong practicability.
Description
Technical field
The present invention relates to macro-energy double-frequency laser system, particularly a kind of II class KDP crystal is to the control method of infrared light frequency multiplication optimum matching state.
Background technology
Ultrashort ultra-intense laser will provide new research means for the development in fields such as the ultrafast science of high field, relativity nonlinear physics, astrophysics; This technology has obtained development by leaps and bounds since middle 1980s, comprise that each scientific and technological power of the world of China has set up large-scale high power ultra-short pulse laser facility in succession.In femtosecond magnitude ultrafast laser system, amplifying (CPA) based on the chirped pulse of titanium jewel (Ti:Sapphire) crystal is the major technology route; And heavy caliber KDP crystal is the main frequency-doubling crystal of 1053nm fundamental frequency light, so the output efficiency that improves the KDP crystal as much as possible is to improve pump energy, realizes one of gordian technique of high energy laser output.
In high energy PW (be afraid of watt) laser system, the method for optimizing KDP crystal double frequency efficient mainly is a phase matching angle of regulating the KDP crystal and the position angle makes frequency doubled light output efficiency maximum; The principle of this method can be summarized as follows:
The expression formula of II class KDP crystal double frequency is o+e → e, and the shg efficiency of KDP crystal and light ray propagation direction (θ, φ) relevant, deff=(d
14+ d
36) sin θ cos θ cos2 φ, the optimum phase matching problem is exactly under the situation that phase matching angle θ satisfies, and selects the position angle φ of light ray propagation, makes the shg efficiency of KDP crystal reach maximum.Figure (1) has provided the frequency multiplication process of fundamental frequency light in the KDP crystal; θ among the figure is a phase matching angle, is the angle of fundamental frequency optical propagation direction with respect to optical axis of crystal Z direction, and the φ angle is that light is at the projection on xy plane and the angle of optical axis.Regulate in order to reduce reflection loss and to be convenient to, general total hope lets fundamental frequency light positive incident plane of crystal in the experiment.So during the processing frequency-doubling crystal, must press the certain orientation sliced crystal,, see figure (2) so that the crystal normal direction becomes θ with optical axis direction.Therefore, when regulating the phase matching angle of KDP crystal, as long as make fundamental frequency light vertical incidence to plane of crystal.But, after definite fundamental frequency light positive is incident to plane of crystal, still need finely tunes phase matching angle and make the KDP crystal reach the optimum matching state owing to there is mismachining tolerance; The fundamental frequency polarization state of light of incident is 45 in the II class frequency multiplication
0The line polarisation is horizontal polarization light or vertical polarization light time when exporting light, and this moment, corresponding position angle φ was 0 ° or 90 °, can know according to the expression formula of effective nonlinear coefficient, and the effective nonlinear coefficient of this moment is maximum, and conversion efficiency is the highest.When frequency multiplication polarization state of light during not at these two states, crystal is not in best frequency multiplication state, and output efficiency is on the low side.Through rotating crystal, can change azimuthal size, and the output polarization state of light changes with the change at phasing degree.
At present, in high energy PW laser system, the key step of the control method of heavy caliber KDP frequency-doubling crystal can be summarized as follows: after the KDP frequency-doubling crystal is placed on amplifier, make light be incident to the germ nucleus; The phase matching angle and the position angle of adjustment KDP crystal, the power of behind KDP, observing green glow simultaneously with blank sheet of paper is stopped the rotation when green glow is the strongest, fixedly the KDP crystal frame; Mainly there is following shortcoming in this method: because fundamental frequency invisible light only, and general KDP plane of crystal all is coated with the 1053nm anti-reflection film, the Direct observation fundamental frequency only not the vertical incidence plane of crystal be difficulty very; Utilize the power of eye-observation green glow to be easy to cause eye fatigue, and then cause judgement inaccurate, influenced frequency multiplication output; Even when the green glow of exporting is the strongest, corresponding output polarization state of light is not necessarily horizontal polarization light, also might be orthogonal polarized light; The single-shot experiment that this method need be carried out repeatedly just can obtain higher shg efficiency, and is consuming time very long, and shg efficiency can not get maximization, can not guarantee to export polarization state of light.
Summary of the invention
The objective of the invention is to overcome the shortcoming of above-mentioned existing heavy caliber KDP frequency-doubling crystal control method; The control method of a kind of II class KDP crystal to infrared light frequency multiplication optimum matching state is provided, and this method both can make the shg efficiency maximization, can guarantee to export the control method of polarization state again, and this method is not only simple to operate, scientific and effective, and practical.
Technical solution of the present invention is following:
A kind of II class KDP crystal is characterized in that to the control method of infrared light frequency multiplication optimum matching state this method comprises the following steps:
1. prepare: in the near infrared fundamental frequency light light path of KDP crystal is set; Two positions of the light path before in KDP crystal design position are placed first aperture and second aperture respectively; When utilizing the infrared light detecting sheet to survey basic frequency beam; Adjust first aperture and second aperture, make the center of described basic frequency beam pass described first aperture and second aperture, to confirm the fundamental frequency direction of light;
2. the phase matching angle of coarse adjustment KDP crystal: before fundamental frequency light light path neutralizes first aperture, place the He-Ne laser instrument; Regulate the adjustment rack of described He-Ne laser instrument; The He-Ne laser beam that makes the output of He-Ne laser instrument is through described first aperture and second aperture, and this moment, the He-Ne laser beam overlapped with the fundamental frequency light direction; Design attitude with KDP crystal in the light path that is fixed on after KDP crystal on the adjustment rack is placed on second aperture; And make the He-Ne laser beam be incident to the center of KDP crystal; The pitching and the deflection of the adjustment rack through regulating the KDP crystal; Make from the He-Ne light beam of KDP plane of crystal reflection to overlap, lock the adjustment rack of described KDP crystal then with the center of described second aperture;
3. regulate the position angle of KDP crystal: described He-Ne laser instrument, first aperture and second aperture are removed, opened fundamental frequency light, described fundamental frequency light has faint green glow output behind described KDP crystal; A long focus lens is placed in the light path behind the described KDP crystal; Near the focus of described long focus lens, place Rochon prism, rotate described KDP crystal, behind described Rochon prism, utilize white to observe green glow through adjustment rack; When the luminous point of green glow is unique, locking KDP crystal;
4. the phase matching angle of accurate adjustment KDP crystal: place photoelectric probe in the light path behind described Rochon prism; The output terminal of described photoelectric probe links to each other with oscillographic input end, and the output of described photoelectric probe is input in the oscillograph, finely tunes adjustment rack pitching of KDP crystal and deflection then; When the waveforms amplitude on the observation oscilloscope reaches maximum; The adjustment rack of fixing described KDP crystal, adjusting finishes, and described long focus lens, Rochon prism, photoelectric probe and oscillograph are removed.
Compare with first method, the present invention has following outstanding feature:
1, utilize visible He-Ne light to confirm phase matching angle as secondary light source, very effectively simple when observing KDP plane of crystal light echo, can practice thrift the plenty of time;
2, utilize Rochon prism to judge the optimum azimuth of KDP crystal, accuracy is high, and maximum can reach desirable position angle, thereby the green glow that has guaranteed output is the strongest, makes shg efficiency maximize;
3, utilize Rochon prism to guarantee the horizontal polarization attitude of frequency doubled light, guaranteed the absorption maximum of laser crystal, thereby can improve the amplification efficient of final seed light pump light.
Description of drawings
Fig. 1 is o light and the e light in the KDP uniaxial crystal.
Fig. 2 is the cutting of nonlinear crystal.
Fig. 3 is the simple and easy index path of II class KDP crystal of the present invention to the control method of infrared light frequency multiplication optimum matching state.
Embodiment
Below in conjunction with embodiment and accompanying drawing the present invention is described further, but should limit protection scope of the present invention with this.
See also Fig. 3 earlier, Fig. 3 is the simple and easy index path of II class KDP crystal of the present invention to the control method of infrared light frequency multiplication optimum matching state.By the control method of the visible II class KDP crystal of the present invention of figure, comprise the following steps: infrared light frequency multiplication optimum matching state
1. prepare: in the near infrared fundamental frequency light light path (the light beam working direction from left to right) of KDP crystal is set; Two positions of the light path before the KDP crystal are placed first aperture 2 and second aperture 3 respectively; When utilizing the infrared light detecting sheet to survey basic frequency beam; Adjust first aperture 2 and second aperture 3, make the center of described basic frequency beam pass described first aperture 2 and second aperture 3, to confirm the fundamental frequency direction of light;
2. the phase matching angle of coarse adjustment KDP crystal: before fundamental frequency light light path neutralizes first aperture 2, place He-Ne laser instrument 1; Regulate the adjustment rack of described He-Ne laser instrument 1; The He-Ne laser beam that makes 1 output of He-Ne laser instrument is through described first aperture 2 and second aperture 3, and this moment, the He-Ne laser beam overlapped with the fundamental frequency light direction; The KDP crystal 4 that is fixed on the adjustment rack is placed in second aperture, the 3 back light paths; And make the He-Ne laser beam be incident to the center of KDP crystal 4; The pitching and the deflection of the adjustment rack through regulating the KDP crystal 4; Make from the He-Ne light beam of KDP crystal 4 surface reflection to overlap, then the adjustment rack of fixing described KDP crystal 4 with the center of described second aperture 3;
3. regulate the position angle of KDP crystal: described He-Ne laser instrument 1, first aperture 2 and second aperture 3 are removed, opened fundamental frequency light, described fundamental frequency light has faint green glow output behind described KDP crystal 4; A long focus lens 5 is placed in the light path behind the described KDP crystal 4; Near the focus of described long focus lens 5, place Rochon prism 6; Rotate described KDP crystal 4 through adjustment rack around light beam; Utilize the white screen to observe green glow in described Rochon prism 6 backs, when the luminous point of green glow is unique, locking KDP crystal 4;
4. the phase matching angle of accurate adjustment KDP crystal: place photoelectric probe 7 in the light path behind described Rochon prism 6; The output terminal of described photoelectric probe 7 links to each other with the input end of oscillograph 8; The output of described photoelectric probe 7 is input in the oscillograph 8; Finely tune adjustment rack pitching of KDP crystal 4 and deflection then, when the waveforms amplitude on the observation oscilloscope 8 reaches maximum, lock the adjustment rack of described KDP crystal; Adjusting finishes, and described long focus lens 5, Rochon prism 6, photoelectric probe 7 and oscillograph 8 are removed.
Claims (1)
1. an II class KDP crystal is characterized in that to the control method of infrared light frequency multiplication optimum matching state this method comprises the following steps:
1. prepare: in the near infrared fundamental frequency light light path of KDP crystal is set; Two positions of the light path before the KDP crystal are placed first aperture (2) and second aperture (3) respectively; When utilizing the infrared light detecting sheet to survey basic frequency beam; Adjust first aperture (2) and second aperture (3), make the center of described basic frequency beam pass described first aperture (2) and second aperture (3), to confirm the fundamental frequency direction of light;
2. the phase matching angle of coarse adjustment KDP crystal: place He-Ne laser instrument (1) before at fundamental frequency light light path first aperture (2) that neutralizes; Regulate the adjustment rack of described He-Ne laser instrument (1); The He-Ne laser beam that makes He-Ne laser instrument (1) output is through described first aperture (2) and second aperture (3), and this moment, the He-Ne laser beam overlapped with the fundamental frequency light direction; The KDP crystal (4) that is fixed on the adjustment rack is placed in the light path of second aperture (3) back; And make the He-Ne laser beam be incident to the center of KDP crystal (4); The pitching and the deflection of the adjustment rack through regulating KDP crystal (4); Make from the He-Ne light beam of KDP crystal (4) surface reflection to overlap, then the adjustment rack of fixing described KDP crystal (4) with the center of described second aperture (3);
3. regulate the position angle of KDP crystal: described He-Ne laser instrument (1), first aperture (2) and second aperture (3) are removed, opened fundamental frequency light, described fundamental frequency light has faint green glow output behind described KDP crystal (4); A long focus lens (5) is placed in the light path behind the described KDP crystal (4); Near the focus of described long focus lens (5), place Rochon prism (6); Rotate described KDP crystal (4) through adjustment rack; Utilize white to observe green glow in described Rochon prism (6) back, when the luminous point of green glow is unique, the rotary knob of the adjustment rack of locking KDP crystal (4);
4. the phase matching angle of accurate adjustment KDP crystal: place photoelectric probe (7) in the light path behind described Rochon prism (6); The output terminal of described photoelectric probe (7) links to each other with the input end of oscillograph (8); The output of described photoelectric probe (7) is input in the oscillograph (8); Finely tune KDP crystal (4) adjustment rack pitching and deflection then, when the waveforms amplitude on the observation oscilloscope (8) reaches maximum, lock the adjustment rack of described KDP crystal; Adjusting finishes, and described long focus lens (5), Rochon prism (6), photoelectric probe (7) and oscillograph (8) are removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210180289.0A CN102707542B (en) | 2012-06-04 | 2012-06-04 | Method for regulating best matching state of type-II KDP (Potassium Dihydrogen Phosphate) crystal for frequency multiplication of infrared light |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210180289.0A CN102707542B (en) | 2012-06-04 | 2012-06-04 | Method for regulating best matching state of type-II KDP (Potassium Dihydrogen Phosphate) crystal for frequency multiplication of infrared light |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102707542A true CN102707542A (en) | 2012-10-03 |
| CN102707542B CN102707542B (en) | 2014-11-26 |
Family
ID=46900447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210180289.0A Active CN102707542B (en) | 2012-06-04 | 2012-06-04 | Method for regulating best matching state of type-II KDP (Potassium Dihydrogen Phosphate) crystal for frequency multiplication of infrared light |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102707542B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103278128A (en) * | 2013-05-17 | 2013-09-04 | 中国工程物理研究院激光聚变研究中心 | Rapid and accurate measuring method for optimum matching angle of KDP (potassium dihydrogen phosphate) crystal |
| CN103278997A (en) * | 2013-04-28 | 2013-09-04 | 哈尔滨工业大学 | Mixer crystal four-dimensional high-precision adjustment mechanism |
| CN103457146A (en) * | 2013-09-05 | 2013-12-18 | 中国科学院上海光学精密机械研究所 | Method for determining orientation of crystal axis of titanium sapphire crystal |
| CN108168470A (en) * | 2018-03-21 | 2018-06-15 | 中国工程物理研究院激光聚变研究中心 | A kind of measuring device and method of the frequency-doubling crystal characteristic angle based on divergent beams |
| CN111244731A (en) * | 2018-11-28 | 2020-06-05 | 中国科学院大连化学物理研究所 | Crystal constant temperature equipment with adjustable angle |
| CN111913332A (en) * | 2020-08-17 | 2020-11-10 | 江苏博创翰林光电高科技有限公司 | Second harmonic bandwidth compression method |
| CN114414210A (en) * | 2021-11-25 | 2022-04-29 | 清华大学 | Rapid measurement system and method for phase matching direction of laser frequency doubling crystal |
| CN114413794A (en) * | 2022-01-29 | 2022-04-29 | 中国工程物理研究院激光聚变研究中心 | System and method for measuring optimal phase matching angle of large-diameter KDP crystal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2629933Y (en) * | 2003-03-17 | 2004-08-04 | 中国科学院福建物质结构研究所 | Adjustable cutting device of double-frequency crystal I phase matching angle |
| US20050276285A1 (en) * | 2004-06-15 | 2005-12-15 | National Tsing Hua University | Actively Q-switched laser system using quasi-phase-matched electro-optic Q-switch |
| US20110013264A1 (en) * | 2007-08-07 | 2011-01-20 | Onyx Optics, Inc. | Quasi non-critical phase matched and contra-phase matched structures |
-
2012
- 2012-06-04 CN CN201210180289.0A patent/CN102707542B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2629933Y (en) * | 2003-03-17 | 2004-08-04 | 中国科学院福建物质结构研究所 | Adjustable cutting device of double-frequency crystal I phase matching angle |
| US20050276285A1 (en) * | 2004-06-15 | 2005-12-15 | National Tsing Hua University | Actively Q-switched laser system using quasi-phase-matched electro-optic Q-switch |
| US20110013264A1 (en) * | 2007-08-07 | 2011-01-20 | Onyx Optics, Inc. | Quasi non-critical phase matched and contra-phase matched structures |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103278997A (en) * | 2013-04-28 | 2013-09-04 | 哈尔滨工业大学 | Mixer crystal four-dimensional high-precision adjustment mechanism |
| CN103278997B (en) * | 2013-04-28 | 2016-01-20 | 哈尔滨工业大学 | A kind of mixer crystal four-dimensional high-precision adjustment mechanism |
| CN103278128A (en) * | 2013-05-17 | 2013-09-04 | 中国工程物理研究院激光聚变研究中心 | Rapid and accurate measuring method for optimum matching angle of KDP (potassium dihydrogen phosphate) crystal |
| CN103278128B (en) * | 2013-05-17 | 2015-11-04 | 中国工程物理研究院激光聚变研究中心 | One is KDP crystal optimum matching angle accurate measurement method fast |
| CN103457146A (en) * | 2013-09-05 | 2013-12-18 | 中国科学院上海光学精密机械研究所 | Method for determining orientation of crystal axis of titanium sapphire crystal |
| CN103457146B (en) * | 2013-09-05 | 2015-12-23 | 中国科学院上海光学精密机械研究所 | Determine titanium gem crystal crystallographic axis towards method |
| CN108168470A (en) * | 2018-03-21 | 2018-06-15 | 中国工程物理研究院激光聚变研究中心 | A kind of measuring device and method of the frequency-doubling crystal characteristic angle based on divergent beams |
| CN108168470B (en) * | 2018-03-21 | 2023-07-04 | 中国工程物理研究院激光聚变研究中心 | Device and method for measuring characteristic angle of frequency doubling crystal based on divergent light beam |
| CN111244731A (en) * | 2018-11-28 | 2020-06-05 | 中国科学院大连化学物理研究所 | Crystal constant temperature equipment with adjustable angle |
| CN111913332A (en) * | 2020-08-17 | 2020-11-10 | 江苏博创翰林光电高科技有限公司 | Second harmonic bandwidth compression method |
| CN114414210A (en) * | 2021-11-25 | 2022-04-29 | 清华大学 | Rapid measurement system and method for phase matching direction of laser frequency doubling crystal |
| CN114414210B (en) * | 2021-11-25 | 2023-03-21 | 清华大学 | Rapid measurement system and method for phase matching direction of laser frequency doubling crystal |
| CN114413794A (en) * | 2022-01-29 | 2022-04-29 | 中国工程物理研究院激光聚变研究中心 | System and method for measuring optimal phase matching angle of large-diameter KDP crystal |
| CN114413794B (en) * | 2022-01-29 | 2023-09-22 | 中国工程物理研究院激光聚变研究中心 | System and method for measuring optimal phase matching angle of large-caliber KDP crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102707542B (en) | 2014-11-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102707542B (en) | Method for regulating best matching state of type-II KDP (Potassium Dihydrogen Phosphate) crystal for frequency multiplication of infrared light | |
| US9488525B2 (en) | Method and apparatus for femtosecond laser pulse measurement based on transient-grating effect | |
| CN106197693A (en) | A kind of ultrashort laser pulse waveform meter | |
| CN103259180B (en) | High-contrast femtosecond laser pulse generation device | |
| CN107677379B (en) | Femtosecond laser pulse waveform measuring device | |
| Iskhakov et al. | Macroscopic pure state of light free of polarization noise | |
| CN107102436B (en) | Wave plate set design method for compensating any optical phase delay | |
| CN103698025A (en) | Domain wall-based nonlinear impulse autocorrelation measuring method and measuring device | |
| CN109164663A (en) | Source and preparation method thereof and the unrelated quantum random number generator of equipment are tangled in a kind of miniaturization | |
| CN108462026A (en) | A kind of auto-collimation high stable tangles source module and system | |
| CN102522689B (en) | Wide spectral bandwidth ultrashort laser pulse seed source with stable carrier-envelope phase | |
| CN205808565U (en) | A kind of ultrashort laser pulse waveform meter | |
| CN109060150B (en) | Ultra-short pulse time width measuring device and method based on spectral interference | |
| CN102928989B (en) | Multi-pass phase modulation device of high-power laser system | |
| Chen et al. | Plasma-based terahertz wave photonics in gas and liquid phases | |
| CN1332262C (en) | Wavelength conversion method, wavelength conversion laser, and laser beam machining apparatus | |
| CN103825186B (en) | A kind of method improving laser output stability | |
| CN109375449B (en) | Method for controlling two-photon quantum interference curve | |
| US8149414B2 (en) | Method and device for measuring the spectral phase or the combined spectral and spatial phases of ultra short light pulses | |
| CN100570464C (en) | Carrier envelope phase stable dual-wavelength output optical parametric amplification laser system | |
| CN103187680B (en) | Device and method for improving signal-to-noise ratio of ultrashort pulse laser | |
| CN108775966B (en) | Double-delay third-order correlator | |
| CN105572081A (en) | High-sensitivity measuring method for representing saturated absorption material | |
| CN101820130A (en) | Method for adjusting non-collinear once chirped pulse optical parameter amplifying system | |
| CN211528873U (en) | Device for generating terahertz waves by collinear circular polarization long-wave bicolor field |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |