CN102659752A - Tetracene derivative field effect transistor material and preparation method thereof - Google Patents
Tetracene derivative field effect transistor material and preparation method thereof Download PDFInfo
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- CN102659752A CN102659752A CN2012101137977A CN201210113797A CN102659752A CN 102659752 A CN102659752 A CN 102659752A CN 2012101137977 A CN2012101137977 A CN 2012101137977A CN 201210113797 A CN201210113797 A CN 201210113797A CN 102659752 A CN102659752 A CN 102659752A
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CN201210113797.7A CN102659752B (en) | 2012-04-18 | 2012-04-18 | Tetracene derivative field effect transistor material and preparation method thereof |
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CN102659752A true CN102659752A (en) | 2012-09-12 |
CN102659752B CN102659752B (en) | 2014-06-18 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102898315A (en) * | 2012-11-05 | 2013-01-30 | 上海毕得医药科技有限公司 | Method for preparing 3-ethynyl-4-fluoroaniline |
CN104051512A (en) * | 2013-03-14 | 2014-09-17 | 台湾积体电路制造股份有限公司 | Backside sensing biofet with enhanced performance |
CN104557439A (en) * | 2013-10-15 | 2015-04-29 | 中国科学院宁波材料技术与工程研究所 | Spiro-benzofluorene derivative as well as preparation method and application thereof |
US9389199B2 (en) | 2013-03-14 | 2016-07-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside sensing bioFET with enhanced performance |
CN109810130A (en) * | 2019-03-19 | 2019-05-28 | 合肥学院 | A kind of rigidity line style C60Photosensitive chemoattractant molecule of the glimmering triplet of fluorine boron and preparation method thereof |
US10823696B2 (en) | 2013-03-14 | 2020-11-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of fabricating a biological field-effect transistor (BioFET) with increased sensing area |
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2012
- 2012-04-18 CN CN201210113797.7A patent/CN102659752B/en active Active
Non-Patent Citations (2)
Title |
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吴卫平 等: "有机场效应晶体管和分子电子学研究进展", 《化学通报》 * |
汤庆鑫 等: "小分子场效应晶体管", 《化学进展》 * |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102898315A (en) * | 2012-11-05 | 2013-01-30 | 上海毕得医药科技有限公司 | Method for preparing 3-ethynyl-4-fluoroaniline |
CN102898315B (en) * | 2012-11-05 | 2015-01-28 | 上海毕得医药科技有限公司 | Method for preparing 3-ethynyl-4-fluoroaniline |
CN104051512A (en) * | 2013-03-14 | 2014-09-17 | 台湾积体电路制造股份有限公司 | Backside sensing biofet with enhanced performance |
US9389199B2 (en) | 2013-03-14 | 2016-07-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside sensing bioFET with enhanced performance |
CN104051512B (en) * | 2013-03-14 | 2017-08-25 | 台湾积体电路制造股份有限公司 | The back side sensing biological field effect transistor of performance enhancement |
US9976982B2 (en) | 2013-03-14 | 2018-05-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside sensing BioFET with enhanced performance |
US10184912B2 (en) | 2013-03-14 | 2019-01-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Backside sensing BioFET with enhanced performance |
US10823696B2 (en) | 2013-03-14 | 2020-11-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of fabricating a biological field-effect transistor (BioFET) with increased sensing area |
CN104557439A (en) * | 2013-10-15 | 2015-04-29 | 中国科学院宁波材料技术与工程研究所 | Spiro-benzofluorene derivative as well as preparation method and application thereof |
CN104557439B (en) * | 2013-10-15 | 2017-02-15 | 中国科学院宁波材料技术与工程研究所 | Spiro-benzofluorene derivative as well as preparation method and application thereof |
CN109810130A (en) * | 2019-03-19 | 2019-05-28 | 合肥学院 | A kind of rigidity line style C60Photosensitive chemoattractant molecule of the glimmering triplet of fluorine boron and preparation method thereof |
CN109810130B (en) * | 2019-03-19 | 2021-12-07 | 合肥学院 | Rigid linear C60-fluoroboric fluorescent triplet-state photosensitized molecule and preparation method thereof |
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CN102659752B (en) | 2014-06-18 |
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Application publication date: 20120912 Assignee: Jiangsu Nanyou IOT Technology Park Ltd. Assignor: Nanjing Post & Telecommunication Univ. Contract record no.: 2016320000211 Denomination of invention: Tetracene derivative field effect transistor material and preparation method thereof Granted publication date: 20140618 License type: Common License Record date: 20161114 |
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Assignee: Jiangsu Nanyou IOT Technology Park Ltd. Assignor: Nanjing Post & Telecommunication Univ. Contract record no.: 2016320000211 Date of cancellation: 20180116 |
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