CN102560612B - Anode assembly for electroplating and electroplating device - Google Patents
Anode assembly for electroplating and electroplating device Download PDFInfo
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- CN102560612B CN102560612B CN201210027927.5A CN201210027927A CN102560612B CN 102560612 B CN102560612 B CN 102560612B CN 201210027927 A CN201210027927 A CN 201210027927A CN 102560612 B CN102560612 B CN 102560612B
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Abstract
The invention relates to an anode assembly for electroplating and an electroplating device. The anode assembly for the electroplating comprises an anode panel, a support rod and a plurality of support lines, wherein one end of the support rod is fixed at the middle area of the anode panel; first ends of the support lines are fixed at the marginal area of the anode panel; second ends of the support lines are fixed on the support rod; and the anode panel can be in a bending state by adjusting the lengths of the support lines. The anode assembly can generate uniform metal layers or films at middle areas and peripheral areas of semiconductor wafers, and finally improves the electroplating quality.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of anode assembly for electroplating and electroplanting device.
Background technology
In manufacture unicircuit (IC) semiconducter device, the even degree of substrate surface is quite crucial, and particularly the density of element increases and after size is contracted to time micron grade.General use metal level, as the line of Individual elements in IC, separates metal wire with dielectric layer or insulation layer, and between dielectric layer, forms the interconnection structures such as groove, contact hole, contact, to provide the circuit path of conducting metal interlayer.
In prior art, interconnection structure is to adopt copper or copper alloy for main raw, specifically can adopt metal level or the film of following method deposited copper or copper alloy: physical vapor deposition (PVD) method, chemical vapour deposition (CVD) method and electrochemical plating.Wherein, electrochemical plating can easily obtain highly purified metal level or film, and not only the formation speed of metal level or film is fast, but also can control the thickness of metal level or film with comparalive ease, and therefore electrochemical plating become main stream approach.General copper electroplating process is by wafer contacts electroplate liquid, and between positive and negative electrode, provides potential difference with metal refining to semiconductor substrate surface.
Electroplating technology needs to adopt electroplanting device to realize.According to the difference of electroplanting device structure, rectilinear electroplanting device and horizontal electroplanting device can be divided into.Be described for rectilinear electroplanting device below.
Fig. 1 is the structural representation of a rectilinear electroplanting device in prior art.Described rectilinear electroplanting device 100 comprises: turning axle 5 and the substrate fixture 4 be fixed on turning axle 5.In electroplating process, wafer 2 is fixed on substrate pedestal 3, and then is fixed on substrate fixture 4 by substrate pedestal 3, then immerses and comprises in the electrolytic plating pool 22 of electroplate liquid.The loop direction of whole electroplate liquid is as shown in arrow 13, and provide successional circulation electroplate liquid by pump 40, electroplate liquid upwards flows to wafer 2, then expands outwardly and flows transversely through wafer 2, as shown in arrow 14.The loop direction of electroplate liquid is from electrolytic plating pool 22 overflow to electroplate liquid storage tanks 20, as shown in arrow 10 and 11.Electroplate liquid flows back to pump 40, completes whole circulation step, as shown in arrow 12 after flowing out storage tanks 20 after flowing through filter (not shown).DC power supply (DC power supply) 50 provides negative pole to export and positive pole exports, and negative pole is wherein electrically connected to wafer 2, and positive pole is electrically connected to the anode 1 in electrolytic plating pool 22.In electroplating process, bias voltage is applied to wafer 2 by power supply unit 50, thus generation is negative volts lost relative to anode 1, makes flow of charge flow to wafer 2 from anode 1.
Fig. 2 is the electric force lines distribution relation schematic diagram between the anode of electroplanting device and negative electrode.In conjunction with reference to figure 2, semiconductor crystal wafer 2 is fixed on substrate fixture (not shown in Fig. 2) by substrate pedestal 3.Electrode contact ring 25 by multiple contact pin (contact pin) 25a and semiconductor crystal wafer 2 in electrical contact.When applying to be biased between anode 1 and semiconductor crystal wafer (negative electrode) 2, the volts lost between anode and negative electrode forms many power line Fc and Fe.Fc and Fe represents the power line in the middle section being in semiconductor crystal wafer (negative electrode) 2 and the power line in peripheral region respectively.Due to electrode contact ring 25 by multiple contact pin 25a and semiconductor crystal wafer 2 in electrical contact, cause volts lost sharply in the peripheral region of semiconductor crystal wafer 2 near contact pin 25a place, make the density of the power line Fe near contact pin 25a high more than the density of the power line Fc of semiconductor crystal wafer (negative electrode) 2 middle section.But, higher near contact pin 25a power line Fe density, just cause current density higher, and make the electrolytic coating deposit thickness of the peripheral region of semiconductor crystal wafer 2 thicker, and then cause in subsequent technique, bring out stripping and particle residue.Conductive layer thickness is on a semiconductor wafer uneven, also easily makes technique worsen further, and makes resistance bias higher.
Similarly, in other electroplanting devices of prior art, the middle section electrolytic coating deposit thickness that also there is semiconductor crystal wafer is thin, the defect that peripheral region electrolytic coating deposit thickness is thick.Especially when the size of semiconductor crystal wafer is greater than after 8 cun, above-mentioned defect is more obvious.
Therefore, how to ensure that the metal thickness homogeneity being deposited on semiconductor wafer surface in electroplating process just becomes those skilled in the art's problem demanding prompt solution.
Summary of the invention
The problem that the present invention solves is to provide a kind of anode assembly for electroplating and electroplanting device, in the process of plating, can form uniform metal level or film at the middle section of semiconductor crystal wafer and peripheral region, the final quality improving plating.
For solving the problem, the invention provides a kind of anode assembly for electroplating, comprising:
Anode plate;
Support bar, one end is fixed on the region intermediate of anode plate;
Multiple Support Level, the first end of described Support Level is fixed on the fringe region of anode plate, and the second end is fixed on support bar;
Described anode plate is made to be in case of bending by regulating the length of Support Level.
Alternatively, described Support Level is fixed on the fringe region of anode plate by bondage, welding, draw-in groove or hang.
Alternatively, described Support Level is fixed on support bar by bondage, welding, draw-in groove or hang.
Alternatively, one end of described support bar is fixed on the region intermediate of anode plate by screws bolts, welding or draw-in groove mode.
Alternatively, described anode plate arranges multiple hole.
Alternatively, described electroplanting device also comprises: baffle plate, is arranged on the fringe region of described anode plate.
Alternatively, described anode plate is multilayer concentric circle structure, and every layer receives different cathode voltages.
Alternatively, described anode plate is circular plate type, and described multiple Support Level is distributed in equably at the edge of described anode plate.
Alternatively, the second end of at least part of Support Level is fixed on the different positions of support bar.
Alternatively, the second end of described multiple Support Level is fixed on the same position of support bar.
In order to solve the problem, present invention also offers a kind of electroplanting device comprising above-mentioned anode assembly for electroplating.
Compared with prior art, the present invention has the following advantages: in electroplating process, anode is made to be in case of bending, thus the distance between anode and semiconductor crystal wafer increases along region intermediate successively to fringe region, and then make the electric field between anode and semiconductor crystal wafer region intermediate be better than electric field between anode and semiconductor crystal wafer fringe region, the defect of the density of electric fluxline of middle section is greater than with the density of electric fluxline making up fringe region, thus the electrolytic coating deposit thickness reducing fringe region and middle section is poor, ensure that the homogeneity of the metal level that semiconductor crystal wafer deposits or film, finally improve the quality of plating.
Accompanying drawing explanation
Fig. 1 is the structural representation of a rectilinear electroplanting device in prior art;
Fig. 2 is the electric force lines distribution relation schematic diagram between the anode of electroplanting device in prior art and negative electrode;
Fig. 3 is the structural representation of electroplanting device in the embodiment of the present invention one;
Fig. 4 is the structural representation of anode assembly for electroplating in Fig. 3;
Fig. 5 is the structural representation of electroplanting device in the embodiment of the present invention two;
Fig. 6 is the structural representation of electroplanting device in the embodiment of the present invention three.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, therefore the present invention is not by the restriction of following public specific embodiment.
Just as described in the background section, in prior art on a semiconductor wafer electroplated metal layer or film time, because the electric force lines distribution between anode and negative electrode (i.e. semiconductor crystal wafer) is uneven, therefore cause the middle section electrolytic coating deposit thickness of wafer thin, the defect that peripheral region electrolytic coating deposit thickness is thick.
For above-mentioned defect, the invention provides a kind of anode assembly for electroplating, comprising:
Anode plate;
Support bar, one end is fixed on the region intermediate of anode plate;
Multiple Support Level, the first end of described Support Level is fixed on the fringe region of anode plate, and the second end is fixed on support bar;
Described anode plate is made to be in case of bending by regulating the length of Support Level.
The present invention is in electroplating process, anode plate is made to be in case of bending, thus the distance between anode plate and semiconductor crystal wafer increases along region intermediate successively to fringe region, and then make the electric field between anode and semiconductor crystal wafer region intermediate be better than electric field between anode and semiconductor crystal wafer fringe region, the defect of the density of electric fluxline of middle section is greater than with the density of electric fluxline making up fringe region, thus the electrolytic coating deposit thickness reducing fringe region and middle section is poor, ensure that the homogeneity of the metal level that semiconductor crystal wafer deposits or film, finally improve the quality of plating.
Be described in detail below in conjunction with accompanying drawing.
Embodiment one
Shown in figure 3 and Fig. 4, present embodiments provide a kind of electroplanting device, comprising:
Chemical plating groove, comprises electrolytic plating pool 110;
Substrate fixture 130, for fixing semiconductor crystal wafer 140, described semiconductor crystal wafer 140 electroplated face and anode plate 120 are oppositely arranged;
Power supply unit 150, exports for providing negative pole and positive pole exports, and described negative pole exports and connects semiconductor crystal wafer 140, and described positive pole exports and connects anode assembly for electroplating;
Anode assembly for electroplating, comprising: anode plate 120; Support bar 170, described support bar 170 one end is fixed on the region intermediate of anode plate 120; Multiple Support Level 160, the first end of described Support Level 160 is fixed on the fringe region of anode plate 120, and the second end is fixed on support bar 170; Described anode plate 120 is made to be in case of bending by regulating the length of Support Level 160.
Described anode plate 120 can be vertically set in described electrolytic plating pool 110, thus completes electroplating process by the tangential movement of electroplate liquid, and namely electroplanting device can be horizontal.Described anode plate 120 also can be horizontally set in described electrolytic plating pool 110, thus completes electroplating process by the vertical movement of electroplate liquid, and namely described electroplanting device can be rectilinear.Fig. 3 is described for horizontal electroplanting device, but it does not limit the scope of the invention.
Wherein, the structure of described substrate fixture 130 and power supply unit 150 is all same as the prior art with effect, does not repeat them here.
Wherein, described substrate fixture 130 and anode plate 120 can carry out suspension to be fixed respectively by the hook (not shown) above electrolytic plating pool 110, and other modes also can be adopted to be fixed, and it does not limit the scope of the invention.
Described anode plate 120 can be non-inert anode.Now, when on semiconductor crystal wafer 140 during electro-coppering, then anode plate 120 can be copper coin.In such cases, anode plate 120 participates in redox reaction, by the own loss of anode plate 120 to form layers of copper on semiconductor crystal wafer 140.
Described anode plate 120 can also be noble electrode.Now, when on semiconductor crystal wafer 140 during electro-coppering, then the material of anode plate 120 can be graphite or platinum, thus anode plate 120 plays a part to transmit electronics, does not participate in redox reaction, finally can reduce the loss of antianode panel 120.
Anode plate 120 described in the present embodiment can be reticulated structure, namely described anode plate 120 is provided with multiple hole, the shape of described hole can be circle or Polygons etc., thus make electroplate liquid can abundant convection current and diffusion between semiconductor crystal wafer 140 (i.e. negative electrode) and anode plate 120, concentration polarization can be avoided, be conducive to the escape of gas, finally can improve the homogeneity of metal deposition.It should be noted that, in other embodiments of the invention, described anode plate 120 also can not arrange hole, now described anode plate 120 is the uniform battery lead plate of thickness.
The face that anode plate 120 described in the present embodiment is relative with described semiconductor crystal wafer 140 electroplated face can be cambered surface, thus the distance between anode plate 120 and described semiconductor crystal wafer 140 increases along region intermediate successively to fringe region, now, although in electroplating process, the density of electric fluxline between semiconductor crystal wafer 140 and anode plate 120 increases along region intermediate successively to fringe region, but because the distance d1 between semiconductor crystal wafer 140 region intermediate and anode plate 120 region intermediate is less than the distance d2 between semiconductor crystal wafer 140 fringe region and anode plate 120 fringe region, therefore the electric field between anode plate 120 and semiconductor crystal wafer 140 region intermediate can be made to be better than electric field between anode plate 120 and semiconductor crystal wafer 140 fringe region, and then the electrolytic coating deposit thickness that can reduce fringe region and region intermediate is poor, ensure that the homogeneity of the metal level that semiconductor crystal wafer deposits or film, finally improve the quality of plating.
Wherein, the thickness of degree of crook and the size of semiconductor crystal wafer 140, metal level to be deposited or the film of described anode plate 120, the factor such as voltage swing, the size of anode plate 120, the distance between semiconductor crystal wafer 140 and anode plate 120 that power supply unit 150 provides are relevant.
Support Level 160 described in the present embodiment can be electro-conductive material, thus power supply unit 150 can by Support Level 160 for anode plate 120 provides cathode voltage.
Described Support Level 160 can be fixed on the fringe region of anode plate 120 by bondage mode, now need to arrange hole at the fringe region of anode plate 120, and Support Level 160 is strapped on anode plate 120 through hole.This kind of method is simple to operation.Described Support Level 160 also can be fixed on the fringe region of anode plate 120 by welding process.Described Support Level 160 can also be fixed on the fringe region of anode plate 120 by draw-in groove mode, now, the fringe region of described anode plate 120 is provided with draw-in groove, and described draw-in groove is corresponding with the size of Support Level 160, thus Support Level 160 can be stuck in draw-in groove to be fixed.Described Support Level 160 can also be fixed on the fringe region of anode plate 120 by hang, now, the fringe region of anode plate 120 is provided with grab, the first end of described Support Level 160 is also provided with corresponding grab, thus is suspended on the grab on anode plate 120 by the grab in Support Level 160.It should be noted that, in other embodiments of the invention, the first end of described Support Level 160 can also be fixed on the fringe region of anode plate 120 by other means, and it does not limit the scope of the invention.
Similarly, described Support Level 160 also can be fixed on support bar 170 by bondage, welding, draw-in groove or hang, and this repeats no more.
One end of described support bar 170 can be fixed on the region intermediate of anode plate 120 by screws bolts mode, also can be fixed on the region intermediate of anode plate 120 by welding process, also has the region intermediate being fixed on anode plate 120 by draw-in groove mode.Particularly, described support bar 170 can be fixed on the central position point of anode plate 120, also can be fixed on other central zones of anode plate 120 non-central location point.
Preferably, described anode plate 120 is circular plate type, and described multiple Support Level 160 is arranged on the edge of anode plate 120 equably.The number of described Support Level 160 can be multiple, as: 3,6,8 or 10 etc.In other embodiments of the invention, described anode plate 120 can also be other shapes.
Second end of described Support Level 160 can be fixed on the same position of support bar 170; Also the different positions of support bar 170 can be fixed on; Part Support Level can also be fixed on the same position of support bar 170, residue Support Level 160 is fixed on the different positions of support bar 170.It is specifically arranged according to the bending needs of anode plate 120.
When electroplating, can first adopt Support Level 160 and support bar 170 that anode plate 120 is arranged to case of bending outward at electrolytic plating pool, then above-mentioned anode assembly for electroplating one piece is placed in electrolytic plating pool.When needing the case of bending changing anode plate 120, being taken out by anode assembly for electroplating from electrolytic plating pool, then adjusting the length of Support Level 160, the Support Level 160 after adjustment all can be constant with the fixed position of anode plate 120 and support bar 170.
Embodiment two
Shown in figure 5, the present embodiment can also be provided with baffle plate 220 at the fringe region of anode plate 120.The material of described baffle plate 220 can be any one insulating material, thus described baffle plate 220 can reduce the power line between anode plate 120 and semiconductor crystal wafer 140 fringe region.Now, the angle of bend of described anode plate 120 can reduce.
Baffle plate 220 described in the present embodiment is rectangular parallelepiped, specifically can be fixed by the mode hung.It should be noted that, described baffle plate 220 can also for bending arc structure in other embodiments of the invention, and the mode be pasted onto on anode plate 120 also can be adopted to be fixed for it or other modes are fixed.
In above-mentioned electroplating process, the distance between anode plate 120 and semiconductor crystal wafer 140 is not only made to increase successively along region intermediate to fringe region, the defect of the density of electric fluxline of middle section is greater than with the density of electric fluxline making up semiconductor crystal wafer fringe region, but also the power line of fringe region can be reduced by baffle plate 220, thus the homogeneity of electroplating deposition can be improved further.
Embodiment three
In conjunction with reference to shown in figure 6, the present embodiment is under the bending prerequisite of holding anode panel 120, and described anode plate 120 can justify structure for multilayer concentric, now, described power supply unit 150 needs to provide multiple different positive pole to export, and each annulus connects different positive poles and exports.Preferably, the cathode voltage that described positive pole output is corresponding outwards reduces successively from the center of circle of described concentric structure.Now, the angle of bend of described anode plate 120 can reduce.
As an object lesson, in conjunction with reference to shown in figure 6, anode plate 120 comprises three concentric(al) circless 121,122 and 123, each concentric(al) circles exports from the different positive poles of power supply unit 150 respectively and is connected, the cathode voltage that concentric(al) circles 121 receives is V1, and the cathode voltage that concentric(al) circles 122 receives is V2, and the cathode voltage that concentric(al) circles 123 receives is V3, wherein, V1 > V2 > V3.
The present embodiment is in electroplating process, not only make the distance between anode plate 120 and semiconductor crystal wafer 140 increase successively to fringe region along region intermediate, be greater than the defect of the density of electric fluxline of middle section with the density of electric fluxline making up semiconductor crystal wafer fringe region; Also for anode plate 120 different zones provides different cathode voltages, and the cathode voltage of central zone is maximum, and the cathode voltage of fringe region is minimum, thus can improve the homogeneity of electroplating deposition further.
It should be noted that, the present embodiment can also arrange baffle plate (not shown) at the fringe region of anode plate 120.
Although the present invention discloses as above with preferred embodiment, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (7)
1. an anode assembly for electroplating, is characterized in that, comprising:
Anode plate, described anode plate is provided with multiple hole;
Support bar, one end is fixed on the region intermediate of anode plate;
The Support Level of multiple adjustable in length, the first end of described Support Level is fixed on the fringe region of anode plate, and according to the bending needs of anode plate, described second end is fixed on the same or different positions on support bar;
Described anode plate is made to be in case of bending by regulating the length of Support Level;
Baffle plate, is arranged on the fringe region of anode plate and is less than described anode plate.
2. anode assembly for electroplating as claimed in claim 1, it is characterized in that, described Support Level is fixed on the fringe region of anode plate by bondage, welding, draw-in groove or hang.
3. anode assembly for electroplating as claimed in claim 1, it is characterized in that, described Support Level is fixed on support bar by bondage, welding, draw-in groove or hang.
4. anode assembly for electroplating as claimed in claim 1, it is characterized in that, one end of described support bar is fixed on the region intermediate of anode plate by screws bolts, welding or draw-in groove mode.
5. anode assembly for electroplating as claimed in claim 1, it is characterized in that, described anode plate is concentric structure, and each annulus receives different cathode voltages.
6. anode assembly for electroplating as claimed in claim 1, is characterized in that, described anode plate is circular, and described Support Level is fixed on the edge of described anode plate equably.
7. an electroplanting device, is characterized in that, comprises the anode assembly for electroplating according to any one of claim 1 to 6.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210027927.5A CN102560612B (en) | 2012-02-08 | 2012-02-08 | Anode assembly for electroplating and electroplating device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210027927.5A CN102560612B (en) | 2012-02-08 | 2012-02-08 | Anode assembly for electroplating and electroplating device |
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| CN102560612B true CN102560612B (en) | 2015-04-15 |
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| US9670588B2 (en) * | 2013-05-01 | 2017-06-06 | Lam Research Corporation | Anisotropic high resistance ionic current source (AHRICS) |
| US9816194B2 (en) | 2015-03-19 | 2017-11-14 | Lam Research Corporation | Control of electrolyte flow dynamics for uniform electroplating |
| US10014170B2 (en) | 2015-05-14 | 2018-07-03 | Lam Research Corporation | Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity |
| CN111501082B (en) * | 2020-06-04 | 2022-03-29 | 厦门通富微电子有限公司 | Electroplating electrode protection device, electroplating system and semiconductor processing equipment |
| TWI778668B (en) * | 2021-06-18 | 2022-09-21 | 日商荏原製作所股份有限公司 | Impedance body and plating device |
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Address after: Jiangsu province Nantong City Chongchuan road 226006 No. 288 Patentee after: Tongfu Microelectronics Co., Ltd. Address before: 226006 Jiangsu Province, Nantong City Chongchuan District Chongchuan Road No. 288 Patentee before: Fujitsu Microelectronics Co., Ltd., Nantong |