CN102544347A - Quick-response photo-thermal induced voltage thin-film material and application - Google Patents
Quick-response photo-thermal induced voltage thin-film material and application Download PDFInfo
- Publication number
- CN102544347A CN102544347A CN2011102948999A CN201110294899A CN102544347A CN 102544347 A CN102544347 A CN 102544347A CN 2011102948999 A CN2011102948999 A CN 2011102948999A CN 201110294899 A CN201110294899 A CN 201110294899A CN 102544347 A CN102544347 A CN 102544347A
- Authority
- CN
- China
- Prior art keywords
- photo
- thermal
- response
- induced voltage
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 26
- 239000010409 thin film Substances 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005516 engineering process Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 22
- 229910018921 CoO 3 Inorganic materials 0.000 claims description 13
- 229910002367 SrTiO Inorganic materials 0.000 claims description 10
- 230000003334 potential effect Effects 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 claims description 2
- 230000005855 radiation Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 2
- 238000011896 sensitive detection Methods 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 abstract 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 238000004549 pulsed laser deposition Methods 0.000 description 4
- 229910019606 La0.5Sr0.5CoO3 Inorganic materials 0.000 description 3
- 238000001182 laser chemical vapour deposition Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- -1 rare earth ions Chemical class 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001428 transition metal ion Inorganic materials 0.000 description 1
Images
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a photo-thermal induced voltage thin-film material having response time of less than 10 ns, and the application of the material. Lal-xSrxCoO3 serves as a quick-response induced voltage material, wherein x is equal to 0.1 to 0.6. A thin film is grown on an inclined strontium titanate (SrTiO3) single-crystal substrate by using a pulse laser deposit technology and has photo-thermal radiation induced voltage effects. Pulse laser light of which the pulse width is 28 ns and the wavelength is 248 nm is irradiated to the thin film, a quick-response large voltage signal of which the response time is 7 ns and the full width at half maximum is 17ns is obtained in the inclination direction of the thin film, and the voltage signal is acquired by a high-frequency oscilloscope. The photo-thermal induced voltage thin-film material is characterized in that: the response time is short; the material can operate at a wide optical spectrum of 0.19 to 11 mu m; the operation flow is easy, and energy sources are saved; the material can be used for manufacturing quick-response photo-thermal induced voltage detector devices; the response speed of a photo-thermal measuring instrument is increased; and the material is applicable to sensitive detection and tracking of pulse photo-thermal signals and military targets in the technical field of industry and the field of life.
Description
Technical field
The present invention relates to a kind of induced voltage material and purposes of fast-response, belong to light, hot induced voltage material and device technology field.
Background technology
At present, light, thermal measurement appearance mainly are divided into photon type measuring instrument and calorimetric type measuring instrument two big classes.The photon type measuring instrument is based on incident light in the semi-conducting material to the exciting of charge carrier, and like the generation of electron hole, measures the energy of incident light.This type detector has very fast time response usually, but receives to be with and the restriction of energy level, can not in wide spectral region, work.Calorimetric type measuring instrument is the variation that when absorbing heat, has physical quantity, through to the monitoring of physical index and the measuring light radiation.Need the long time to reach heat balance but this type device can be worked in very wide spectral region, so the response time is slow.And above-mentioned two types of devices need apply bias voltage or bias current mostly, thereby cause the interference of dark current, thermal noise and so on, simultaneously consumed energy.
One type of photo-thermal radiation detector is based on the anisotropy of material Seebeck coefficient.To have the anisotropic material epitaxy of Seebeck coefficient and be grown on the single crystalline substrate of inclination, use up, thermal radiation will produce photoinduction voltage to film.Its advantage is in very wide spectral region (0.19 μ m～11 μ m), can obtain high response signal and fast response time.In the thin film material system of perovskite structure and accurate perovskite structure, the response time (referring to the signal rising edge) is in 50ns to the microsecond order of magnitude, but does not also break through 10ns.
Summary of the invention
The objective of the invention is to obtain to be shorter than 10ns in the response time (referring to the signal rising edge); Halfwidth 17ns; Can in very wide spectral region, work, and need not apply any bias voltage, bias current, the saving energy, photo-thermal induced voltage material and device that workflow is easy.
Technical scheme of the present invention is:
Choose La
1-xSr
xCoO
3(X=0.1-O.6) as the thin-film material of fast response optical heat induced potential effect, it belongs to perovskite (A
1-xM
xBO
3) oxide of structure class, wherein X=0.1～O.6, A is a trivalent rare earth ions, and M is the divalent alkaline-earth metal ion, and B is the transition-metal ion of variable valence states such as Mn, Co, Fe, and this type oxide has anisotropic Seebeck coefficient.
Adopt SrTiO
3Or LaAlO
3Structural material is as single crystalline substrate, utilizes pulsed laser deposition technique 5～15 ° of inclinations
SrTiO
3Or LaAlO
3La grows on the single crystalline substrate
1-xSr
xCoO
3Film.
On 5～15 ° of incline directions on the film surface, prepare electrode then, receive on the ondograph through coaxial cable at the electrode two ends.
When pulsewidth is 28ns, wavelength be the pulsed laser irradiation of 248nm to film, on the film incline direction, obtain response time 7ns, the voltage signal that reaches volt of the quick response of halfwidth 17ns collects this voltage signal by ondograph.
Principle of the present invention:
The induced potential formula can be expressed as:
V is the induced potential of film on the substrate tilting direction in (1) formula; L is that film is accepted light, thermal-radiating length, and d is a film thickness; Δ S=(S
Ab-S
c), S
Ab, S
cBe respectively the Seebeck coefficient of ab face and c axle; Δ T is the temperature gradient that film forms in the substrate tilting direction; θ is the angle between single crystalline substrate normal direction and (001) axle, i.e. inclination angle.
The invention has the beneficial effects as follows: the response time has been broken through 10ns (less than 10ns), can in very wide spectral region, work, and need not add any bigoted voltage and current.Can be used for making the photo-thermal induced potential sensitive detection parts of some rapid sensitive reactions, improve the reaction speed of light, thermal measurement appearance, be used for the pulsed light thermal signal of industrial technology field even sphere of life and the sensitivity of military target and survey and follow the trail of.
Description of drawings
Fig. 1 is that the present invention is at inclination SrTiO
3The La that grows on the single crystalline substrate
1-xSr
xCoO
3(X=0.1-O.6) film sketch map and pulse laser induced potential schematic diagram.
Fig. 2 is that the present invention is 10 at the inclination angle
oSrTiO
3The La that grows on the single crystalline substrate
0.5Sr
0.5CoO
3The photoinduction voltage signal curve of film.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is further specified.
Embodiment 1:
In Fig. 1, choose La
1-xSr
xCoO
3, wherein X=0.3 is as the thin-film material of fast-response laser induced chemical vapor deposition voltage effects.At first utilizing pulsed laser deposition technique is 10 at the inclination angle
oSrTiO
3La grows on the single crystalline substrate
1-xSr
xCoO
3Film; Connect ondograph according to Fig. 1 then; With light radiation film surface, then direction produces photoinduction voltage at the inclination angle, thereby can obtain the induced potential signal, forms corresponding image.
Fig. 2 is 10 at the inclination angle for using said method
oSrTiO
3The La that grows on the single crystalline substrate
0.5Sr
0.5CoO
3Film, the photoinduction voltage pattern picture that under Ultra-Violet Laser (248nm) irradiation of 28ns pulse duration, obtains.Can draw La
0.5Sr
0.5CoO
3The response time of film is 7ns, halfwidth 17ns.
Embodiment 2:
In Fig. 1, choose La
1-xSr
xCoO
3, wherein X=0.1 is as the thin-film material of fast-response laser induced chemical vapor deposition voltage effects.At first utilizing pulsed laser deposition technique is 15 at the inclination angle
oSrTiO
3La grows on the single crystalline substrate
1-xSr
xCoO
3Film; Connect ondograph according to Fig. 1 then; With light radiation film surface, then direction produces photoinduction voltage at the inclination angle, thereby can obtain the induced potential signal, forms corresponding image.
The photoinduction voltage pattern picture that under Ultra-Violet Laser (248nm) irradiation of 28ns pulse duration, obtains.Can draw La
0.5Sr
0.5CoO
3The response time of film is 7ns, halfwidth 17ns.
Embodiment 3:
In Fig. 1, choose La
1-xSr
xCoO
3, wherein X=0.6 is as the thin-film material of fast-response laser induced chemical vapor deposition voltage effects.At first utilizing pulsed laser deposition technique is 5 at the inclination angle
oSrTiO
3La grows on the single crystalline substrate
1-xSr
xCoO
3Film; Connect ondograph according to Fig. 1 then; With light radiation film surface, then direction produces photoinduction voltage at the inclination angle, thereby can obtain the induced potential signal, forms corresponding image.
The photoinduction voltage pattern picture that under Ultra-Violet Laser (248nm) irradiation of 28ns pulse duration, obtains.Can draw La
0.5Sr
0.5CoO
3The response time of film is 7ns, halfwidth 17ns.
Claims (3)
1. a photo-thermal induced potential thin-film material that responds fast is characterized in that: adopt SrTiO
3Or LaAlO
3Structural material
As single crystalline substrate, La
1-xSr
xCoO
3Structural material is as the thin-film material of the photo-thermal induced potential effect of fast-response, wherein X=0.1～0.6.
2. quick response induced potential thin-film material according to claim 1 is characterized in that: La
1-xSr
xCoO
3Structure
Film is that to be grown in the inclination angle be 5～15 ° SrTiO
3, LaAlO
3On the single crystalline substrate.
3. quick response induced potential thin-film material according to claim 2 and uses thereof is characterized in that: be used for the pulsed light thermal signal of industrial technology field even sphere of life and the sensitivity of military target and survey and follow the trail of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110294899.9A CN102544347B (en) | 2011-10-08 | 2011-10-08 | Quick-response photo-thermal induced voltage thin-film material and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110294899.9A CN102544347B (en) | 2011-10-08 | 2011-10-08 | Quick-response photo-thermal induced voltage thin-film material and application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102544347A true CN102544347A (en) | 2012-07-04 |
| CN102544347B CN102544347B (en) | 2015-06-03 |
Family
ID=46350758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110294899.9A Expired - Fee Related CN102544347B (en) | 2011-10-08 | 2011-10-08 | Quick-response photo-thermal induced voltage thin-film material and application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102544347B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103427013A (en) * | 2013-08-30 | 2013-12-04 | 昆明理工大学 | Atomic-layer thermopile material and application thereof |
| CN103641465A (en) * | 2013-12-02 | 2014-03-19 | 昆明理工大学 | Preparation method of porous ceramics |
| CN106400115A (en) * | 2016-09-26 | 2017-02-15 | 昆明理工大学 | Novel thin-film material with high-sensitivity transverse light-induced voltage response and preparation method thereof |
| CN108534945A (en) * | 2018-03-22 | 2018-09-14 | 昆明理工大学 | A method of modulation membrane laser induced potential |
| CN108630800A (en) * | 2018-04-17 | 2018-10-09 | 昆明理工大学 | A kind of photo-thermal induced voltage material and its application |
| CN109103324A (en) * | 2018-06-26 | 2018-12-28 | 昆明理工大学 | A kind of hot induced voltage material and its application |
| CN110350075A (en) * | 2018-04-08 | 2019-10-18 | 昆明理工大学 | A kind of hot induced voltage material and its application |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993778A (en) * | 2019-12-13 | 2020-04-10 | 西南科技大学 | Heat flow sensor based on transverse thermoelectric effect of thin film |
| CN115666203B (en) | 2022-12-26 | 2023-06-16 | 山东大学 | Heat flow sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040016926A1 (en) * | 2000-11-03 | 2004-01-29 | The Regents Of The University Of California | Thin film transistors on plastic substrates with reflective coatings for radiation protection |
| CN1923751A (en) * | 2005-12-19 | 2007-03-07 | 昆明理工大学 | Fast response optical heat radiation induced voltage material, preparation method and application |
-
2011
- 2011-10-08 CN CN201110294899.9A patent/CN102544347B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040016926A1 (en) * | 2000-11-03 | 2004-01-29 | The Regents Of The University Of California | Thin film transistors on plastic substrates with reflective coatings for radiation protection |
| CN1923751A (en) * | 2005-12-19 | 2007-03-07 | 昆明理工大学 | Fast response optical heat radiation induced voltage material, preparation method and application |
Non-Patent Citations (1)
| Title |
|---|
| 彭巨擎等: "不同衬底上La0.5Sr0.5CoO3薄膜生长及导电性质的研究", 《昆明理工大学学报》 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103427013A (en) * | 2013-08-30 | 2013-12-04 | 昆明理工大学 | Atomic-layer thermopile material and application thereof |
| CN103641465A (en) * | 2013-12-02 | 2014-03-19 | 昆明理工大学 | Preparation method of porous ceramics |
| CN106400115A (en) * | 2016-09-26 | 2017-02-15 | 昆明理工大学 | Novel thin-film material with high-sensitivity transverse light-induced voltage response and preparation method thereof |
| CN106400115B (en) * | 2016-09-26 | 2020-03-31 | 云南大学 | Thin film material with high-sensitivity transverse light induced voltage response and preparation method thereof |
| CN108534945A (en) * | 2018-03-22 | 2018-09-14 | 昆明理工大学 | A method of modulation membrane laser induced potential |
| CN108534945B (en) * | 2018-03-22 | 2021-01-05 | 昆明理工大学 | Method for modulating thin film laser induced voltage |
| CN110350075A (en) * | 2018-04-08 | 2019-10-18 | 昆明理工大学 | A kind of hot induced voltage material and its application |
| CN108630800A (en) * | 2018-04-17 | 2018-10-09 | 昆明理工大学 | A kind of photo-thermal induced voltage material and its application |
| CN109103324A (en) * | 2018-06-26 | 2018-12-28 | 昆明理工大学 | A kind of hot induced voltage material and its application |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102544347B (en) | 2015-06-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102544347B (en) | Quick-response photo-thermal induced voltage thin-film material and application | |
| Wang et al. | Laser-induced voltage effects in c-axis inclined NaxCoO2 thin films | |
| Singh et al. | Quantitative measurement of transport properties: Ag-doped nanocrystalline CdS thin films | |
| Yoon et al. | Nanoscale imaging and spectroscopy of band gap and defects in polycrystalline photovoltaic devices | |
| Liu et al. | Coherent band-edge oscillations and dynamic longitudinal-optical phonon mode splitting as evidence for polarons in perovskites | |
| Tan et al. | Origin of vertical slab orientation in blade-coated layered hybrid perovskite films revealed with in-situ synchrotron X-ray scattering | |
| CN109216497A (en) | On piece optical detector and its manufacturing method based on Two-Dimensional Anisotropic material | |
| CN1923751A (en) | Fast response optical heat radiation induced voltage material, preparation method and application | |
| CN106400115A (en) | Novel thin-film material with high-sensitivity transverse light-induced voltage response and preparation method thereof | |
| Zhang et al. | Laser-induced thermoelectric voltage effect of La0. 9Sr0. 1NiO3 films | |
| Chen et al. | High sensitivity and fast response self-powered PbSe ultraviolet pulsed photodetectors based on the transverse thermoelectric effect | |
| Bolotnikov et al. | Performance studies of CdZnTe detector by using a pulse shape analysis | |
| Zhang et al. | Temperature dependent photoexcited carrier dynamics in multiferroic BiFeO3 film: A hidden phase transition | |
| CN116519142A (en) | Method for detecting polarization by using three-dimensional topological insulator film | |
| Li et al. | Non-contact localized probing of ferroelectric phase transitions in Li+/Er3+: BaTiO3 ceramics using fluorescence abnormalities | |
| Hammig | Nanoscale methods to enhance the detection of ionizing radiation | |
| CN102359820A (en) | Thermal radiation detector for layered oxide polycrystalline ceramic | |
| Chen et al. | High-performance, ultra-broadband Sb2Te3 photodetector assisted by multimechanism | |
| Yada et al. | Discrimination between photodoping-and heat-induced magnetization changes in Nd 0.52 Sr 0.48 MnO 3 using a heterostructure with SrTiO 3 | |
| Zhang et al. | A novel strongly correlated electronic thin-film laser energy/power meter based on anisotropic Seebeck effect | |
| CN108630800A (en) | A kind of photo-thermal induced voltage material and its application | |
| Yan et al. | The enhancement of laser-induced transverse voltage in tilted Bi2Sr2Co2Oy thin films with a graphite light absorption layer | |
| CN103427013A (en) | Atomic-layer thermopile material and application thereof | |
| Chen et al. | Self-powered high-performance photo and thermal detectors based on the transverse thermoelectric effect of the inclined La-doped BiCuSeO films | |
| Yao et al. | Photon-interactions with perovskite oxides |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150603 Termination date: 20201008 |