CN102479848A - Solar cell structure of III-V semiconductor and manufacturing method thereof - Google Patents

Solar cell structure of III-V semiconductor and manufacturing method thereof Download PDF

Info

Publication number
CN102479848A
CN102479848A CN2010105641225A CN201010564122A CN102479848A CN 102479848 A CN102479848 A CN 102479848A CN 2010105641225 A CN2010105641225 A CN 2010105641225A CN 201010564122 A CN201010564122 A CN 201010564122A CN 102479848 A CN102479848 A CN 102479848A
Authority
CN
China
Prior art keywords
semiconductor layer
solar battery
type semiconductor
type
family
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010105641225A
Other languages
Chinese (zh)
Inventor
张一熙
刘吉人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jifu New Energy Technology Shanghai Co ltd
Original Assignee
Jifu New Energy Technology Shanghai Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jifu New Energy Technology Shanghai Co ltd filed Critical Jifu New Energy Technology Shanghai Co ltd
Priority to CN2010105641225A priority Critical patent/CN102479848A/en
Publication of CN102479848A publication Critical patent/CN102479848A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The invention provides a solar cell structure of III-V Group semiconductors and a manufacturing method thereof, wherein the solar cell structure of the III-V Group semiconductors comprises a transparent substrate, an amorphous silicon layer and at least one layer of III-V Group polycrystalline semiconductor layer (Group III-V Group polycrystalline semiconductor), wherein the amorphous silicon layer is formed on the transparent substrate by using a plasma enhanced chemical vapor deposition method, and the III-V Group polycrystalline semiconductor layer is sequentially formed on the amorphous silicon layer by using a metal organic chemical vapor deposition method. Because the transparent substrate is used for replacing the traditional III-V group substrate, the solar cell module can greatly reduce the cost, increase the area of the solar cell, further increase the light absorption area and improve the conversion efficiency.

Description

Semi-conductive solar battery structure of three or five families and preparation method thereof
Technical field
The present invention relates to a kind of technology of solar battery structure, semi-conductive solar battery structure of particularly a kind of three or five families and preparation method thereof.
Background technology
Because earth available resources are limited, for exempting from resource exhaustion, solar energy industry is arisen at the historic moment, and solar energy is a kind of continuous forever energy of environmental protection, thereby the exploitation solar cell can obtain the luminous energy storage to utilize.Solar cell is that electronics was excited and transition takes place after semiconductor absorbed light quantity or photon, thereby the electrons excited drive circuit forms the battery semiconductor.The various solar cell material that uses at present comprises the material of the element link of semiconductor species such as monocrystalline silicon, polysilicon, amorphous silicon or three or five families, two or six families.
Three or five family's solar cells are called the concentrating solar battery again, have the photoelectric conversion efficiency far above the silicon wafer solar cell, and the pliability of hull cell is also arranged simultaneously.Three or five family's solar cells are with on three or five family's substrates; Form gallium arsenide film with chemical vapour deposition technique; Made film solar battery structure is applied on the solar panel of artificial satellite very early, but has that absorption spectrum ranges is extremely wide, conversion efficiency can high exceed 30% and the life-span is long than other kind solar cell, the advantage of stable in properties.Although three or five family's solar cells need not used silicon wafer, chip cost is still high relatively, is the problem that need overcome at present.
Summary of the invention
The object of the present invention is to provide semi-conductive solar battery structure of a kind of three or five families and preparation method thereof, thereby overcome defective of the prior art.
The present invention realizes through following technical scheme:
The semi-conductive solar battery structure of a kind of three or five families comprises:
One transparency carrier;
One amorphous silicon layer is formed on this transparency carrier; And
At least one three or five family's polycrystal semiconductor layers are formed on this amorphous silicon layer.
Wherein, the material of this transparency carrier is glass, quartz, transparent plastic or signle crystal alumina.
This amorphous silicon layer is to utilize the plasma enhanced chemical vapor deposition method to be formed on this transparency carrier.
This three or five family polycrystal semiconductor layer is to utilize Metalorganic Chemical Vapor Deposition to be formed on this amorphous silicon layer.
The material of this three or five family polycrystal semiconductor layer is indium nitride, InGaN, aluminium arsenide, aluminum gallium arsenide or GaAs.
When this three or five family polycrystal semiconductor layer is two-layer, comprise one first type semiconductor layer and one second type semiconductor layer.
When this three or five family polycrystal semiconductor layer is three layers, comprise one first type semiconductor layer, an essential type semiconductor layer and one second type semiconductor layer.
Wherein, when this first type semiconductor layer was P type poly semiconductor, second type semiconductor layer was a N+ type poly semiconductor; Or first type semiconductor layer when being N+ type poly semiconductor, second type semiconductor layer is a P type poly semiconductor.
The present invention also provides a kind of manufacture method of solar battery structure, comprises the following steps:
On a transparency carrier, form an amorphous silicon layer; And
On this amorphous silicon layer, deposit one deck three or five family's polycrystal semiconductor layers at least in regular turn.
Wherein, the material of this transparency carrier is glass, quartz, transparent plastic or signle crystal alumina.
This amorphous silicon layer is to utilize the plasma enhanced chemical vapor deposition method to be formed on this transparency carrier.
This three or five family polycrystal semiconductor layer is to utilize Metalorganic Chemical Vapor Deposition to be formed on this amorphous silicon layer.
The material of this three or five family polycrystal semiconductor layer is indium nitride, aluminium arsenide, aluminum gallium arsenide or GaAs.
When this three or five family polycrystal semiconductor layer is two-layer, comprise one first type semiconductor layer and one second type semiconductor layer.
When this three or five family polycrystal semiconductor layer is three layers, comprise one first type semiconductor layer, an essential type semiconductor layer and one second type semiconductor layer.
When this first type semiconductor layer was P type poly semiconductor, second type semiconductor layer was a N+ type poly semiconductor; Or first type semiconductor layer when being N+ type poly semiconductor, second type semiconductor layer is a P type poly semiconductor.
The semi-conductive solar battery structure of three or five families of the present invention is to adopt transparency carrier to replace three or five family's substrates of the prior art, can significantly reduce cost.And use cheap transparency carrier, and can the area of solar cell be increased, and then increase the extinction area, promote conversion efficiency.
Description of drawings
Fig. 1 is the cutaway view of an embodiment of the semi-conductive solar battery structure of the present invention three or five families;
Fig. 2 is the cutaway view of another embodiment of the semi-conductive solar battery structure of the present invention three or five families;
Fig. 3 is for making the flow chart of the semi-conductive solar battery structure of three or five families among the present invention.
Description of reference numerals: 100,100 '-solar battery structure; The 10-transparency carrier; The 12-amorphous silicon layer; 14,14 '-3 5 family's semiconductor layer; 142-first type semiconductor layer; 144-second type semiconductor layer; 146-essence type semiconductor layer.
Embodiment
Below in conjunction with accompanying drawing, do more detailed explanation with other technical characterictic and advantage to the present invention is above-mentioned.
The present invention provides semi-conductive solar battery structure of a kind of three or five families and preparation method thereof, and this solar cell can be applicable to wall board for building, roof etc. and locates, and exposes to sunlight with absorption solar energy, and converts thereof into daily available electric energy.
Fig. 1 is the sketch map of solar battery structure 100 of the present invention; This solar cell comprises a transparency carrier 10, an amorphous silicon layer 12 and at least one three or five family's polycrystal semiconductor layers (Group III-V polycrystalsemiconductor) 14; Wherein the material of transparency carrier 10 is glass, quartz, transparent plastic or signle crystal alumina, and amorphous silicon layer 12 is formed on the transparency carrier 10; The material of three or five family's polycrystal semiconductor layers 14 is indium nitride, InGaN, aluminium arsenide, aluminum gallium arsenide or GaAs, and three or five family's polycrystal semiconductor layers 14 are formed on the amorphous silicon layer 12.
As shown in Figure 1; When three or five family's polycrystal semiconductor layers 14 comprise when two-layer; Then it comprises one first type semiconductor layer 142 and one second type semiconductor layer 144, and wherein when first type semiconductor layer 142 was P type poly semiconductor, second type semiconductor layer 144 was a N+ type poly semiconductor; When first type semiconductor layer 142 was N+ type poly semiconductor, second type semiconductor layer 144 was a P type poly semiconductor.With the InGaN is example, and when being P type polycrystalline InGaN semiconductor layer as if first type semiconductor layer 142, second type semiconductor layer 144 is a N+ type polycrystalline InGaN semiconductor layer.
Fig. 2 is another embodiment of solar battery structure 100 ' of the present invention; When three or five family's polycrystal semiconductor layers 14 ' comprise three layers; It comprises one first type semiconductor layer 142, one second type semiconductor layer 144 and an essential type semiconductor layer 146, wherein, and when first type semiconductor layer 142 is P type poly semiconductor; Second type semiconductor layer 144 is a N+ type poly semiconductor, and essential type semiconductor layer 146 is an I type poly semiconductor; When first type semiconductor layer 142 was N+ type poly semiconductor, second type semiconductor layer 144 was a P type poly semiconductor, and essential type semiconductor layer 146 is an I type poly semiconductor.With the InGaN is example, if first type semiconductor layer 142 is a P type polycrystalline InGaN semiconductor layer, then second type semiconductor layer 144 is a N+ type polycrystalline InGaN semiconductor layer, and essential type semiconductor layer 146 is an I type polycrystalline InGaN semiconductor layer.
Fig. 3 is the manufacture method of solar battery structure of the present invention, and (Plasma Enhanced Chemical Vapor Deposition PECVD) forms an amorphous silicon layer in step S10, on a transparency carrier, to utilize the plasma enhanced chemical vapor deposition method; Step S12 utilizes Metalorganic Chemical Vapor Deposition again on amorphous silicon layer (Metal-organic Chemical Vapor Deposition MOCVD) deposits one deck three or five family's polycrystal semiconductor layers at least in regular turn.Itself can't be formed at the semiconductor of three or five families on the transparency carrier, but because the key of the semiconductor of three or five families and amorphous silicon knot (bonding) is close, and lattice is close, constitutes the semi-conductive solar cell of three or five families so can see through amorphous silicon layer with transparency carrier.The step of deposition three or five family's polycrystal semiconductor layers is on amorphous silicon layer, to form first type semiconductor layer and second type semiconductor layer in regular turn among the step S12, or on amorphous silicon layer, forms first type semiconductor layer, essential type semiconductor layer and second type semiconductor layer in regular turn.
In sum; Semi-conductive solar battery structure of three or five families of the present invention and preparation method thereof is to adopt transparency carrier to replace three or five traditional family's substrates; Characteristic through the lattice of amorphous silicon layer own; The polycrystal semiconductor layer of three or five families can be deposited on the amorphous silicon layer, thereby accomplish solar battery structure.
The present invention need not adopt three or five expensive family's substrates, can significantly reduce cost, and because of the transparency carrier cost is low, can make large-area solar cell, and then increase the extinction area, promotes conversion efficiency.
The above is merely preferred embodiment of the present invention, only is illustrative for the purpose of the present invention, and nonrestrictive.Those skilled in the art is understood, and in spirit that claim of the present invention limited and scope, can carry out many changes to it, revise, in addition equivalent, but all will fall in protection scope of the present invention.

Claims (16)

1. semi-conductive solar battery structure of family comprises:
One transparency carrier;
One amorphous silicon layer is formed on this transparency carrier; And
At least one three or five family's polycrystal semiconductor layers are formed on this amorphous silicon layer.
2. the semi-conductive solar battery structure of three or five families as claimed in claim 1 is characterized in that the material of this transparency carrier is glass, quartz, transparent plastic or signle crystal alumina.
3. the semi-conductive solar battery structure of three or five families as claimed in claim 1 is characterized in that, this amorphous silicon layer is to utilize the plasma enhanced chemical vapor deposition method to be formed on this transparency carrier.
4. the semi-conductive solar battery structure of three or five families as claimed in claim 1 is characterized in that, this three or five family polycrystal semiconductor layer is to utilize Metalorganic Chemical Vapor Deposition to be formed on this amorphous silicon layer.
5. the semi-conductive solar battery structure of three or five families as claimed in claim 1 is characterized in that the material of this three or five family polycrystal semiconductor layer is indium nitride, InGaN, aluminium arsenide, aluminum gallium arsenide or GaAs.
6. the semi-conductive solar battery structure of three or five families as claimed in claim 1 is characterized in that, when this three or five family polycrystal semiconductor layer is two-layer, comprises one first type semiconductor layer and one second type semiconductor layer.
7. the semi-conductive solar battery structure of three or five families as claimed in claim 1 is characterized in that, when this three or five family polycrystal semiconductor layer is three layers, comprises one first type semiconductor layer, an essential type semiconductor layer and one second type semiconductor layer.
8. like claim 6 or 7 semi-conductive solar battery structures of described three or five families, it is characterized in that when this first type semiconductor layer was P type poly semiconductor, second type semiconductor layer was a N+ type poly semiconductor; Or first type semiconductor layer when being N+ type poly semiconductor, second type semiconductor layer is a P type poly semiconductor.
9. the manufacture method of a solar battery structure is characterized in that, comprises the following steps:
On a transparency carrier, form an amorphous silicon layer; And
On this amorphous silicon layer, deposit one deck three or five family's polycrystal semiconductor layers at least in regular turn.
10. the manufacture method of solar battery structure as claimed in claim 9 is characterized in that, the material of this transparency carrier is glass, quartz, transparent plastic or signle crystal alumina.
11. the manufacture method of solar battery structure as claimed in claim 9 is characterized in that, this amorphous silicon layer is to utilize the plasma enhanced chemical vapor deposition method to be formed on this transparency carrier.
12. the manufacture method of solar battery structure as claimed in claim 9 is characterized in that, this three or five family polycrystal semiconductor layer is to utilize Metalorganic Chemical Vapor Deposition to be formed on this amorphous silicon layer.
13. the manufacture method of solar battery structure as claimed in claim 9 is characterized in that, the material of this three or five family polycrystal semiconductor layer is indium nitride, aluminium arsenide, aluminum gallium arsenide or GaAs.
14. the manufacture method of solar battery structure as claimed in claim 9 is characterized in that, when this three or five family polycrystal semiconductor layer is two-layer, comprises one first type semiconductor layer and one second type semiconductor layer.
15. the manufacture method of solar battery structure as claimed in claim 9 is characterized in that, when this three or five family polycrystal semiconductor layer is three layers, comprises one first type semiconductor layer, an essential type semiconductor layer and one second type semiconductor layer.
16. the manufacture method like claim 14 or 15 described solar battery structures is characterized in that, when this first type semiconductor layer was P type poly semiconductor, second type semiconductor layer was a N+ type poly semiconductor; Or first type semiconductor layer when being N+ type poly semiconductor, second type semiconductor layer is a P type poly semiconductor.
CN2010105641225A 2010-11-24 2010-11-24 Solar cell structure of III-V semiconductor and manufacturing method thereof Pending CN102479848A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010105641225A CN102479848A (en) 2010-11-24 2010-11-24 Solar cell structure of III-V semiconductor and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010105641225A CN102479848A (en) 2010-11-24 2010-11-24 Solar cell structure of III-V semiconductor and manufacturing method thereof

Publications (1)

Publication Number Publication Date
CN102479848A true CN102479848A (en) 2012-05-30

Family

ID=46092405

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010105641225A Pending CN102479848A (en) 2010-11-24 2010-11-24 Solar cell structure of III-V semiconductor and manufacturing method thereof

Country Status (1)

Country Link
CN (1) CN102479848A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104617167A (en) * 2013-11-01 2015-05-13 国际商业机器公司 Method for forming photovoltaic device, and photovoltaic device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4496788A (en) * 1982-12-29 1985-01-29 Osaka Transformer Co., Ltd. Photovoltaic device
US4657603A (en) * 1984-10-10 1987-04-14 Siemens Aktiengesellschaft Method for the manufacture of gallium arsenide thin film solar cells
JPH0758360A (en) * 1993-08-19 1995-03-03 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture
JPH07240531A (en) * 1993-12-20 1995-09-12 Kurisutaru Device:Kk Solar cell, its manufacture, and forming method of multilayered thin film
US6121541A (en) * 1997-07-28 2000-09-19 Bp Solarex Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
CN1534798A (en) * 2003-03-26 2004-10-06 佳能株式会社 Laminated photovoltage element

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4496788A (en) * 1982-12-29 1985-01-29 Osaka Transformer Co., Ltd. Photovoltaic device
US4657603A (en) * 1984-10-10 1987-04-14 Siemens Aktiengesellschaft Method for the manufacture of gallium arsenide thin film solar cells
JPH0758360A (en) * 1993-08-19 1995-03-03 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacture
JPH07240531A (en) * 1993-12-20 1995-09-12 Kurisutaru Device:Kk Solar cell, its manufacture, and forming method of multilayered thin film
US6121541A (en) * 1997-07-28 2000-09-19 Bp Solarex Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
CN1534798A (en) * 2003-03-26 2004-10-06 佳能株式会社 Laminated photovoltage element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104617167A (en) * 2013-11-01 2015-05-13 国际商业机器公司 Method for forming photovoltaic device, and photovoltaic device

Similar Documents

Publication Publication Date Title
CN101136444B (en) Photovotic device, its manufacture method and solar cells incorporating same
CN102044632B (en) For the Zinc oxide film method and structure of CIGS battery
CN102150276B (en) Thin film sodium species barrier method and structure for CIGS based thin film photovoltaic cell
CN101552322B (en) Solar cell with zinc oxide based organic/inorganic hybrid nanostructure
CN207282509U (en) The crystalline silicon of double-side photic/film silicon heterojunction solar battery
CN103107228A (en) Photoelectric conversion device
US20170104113A1 (en) Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation
CN110767777A (en) Preparation method of low-cost high-efficiency laminated solar cell
KR101176132B1 (en) High Efficient Si-Thin Film Solar Cell
CN102447013A (en) Thin-film solar cell fabrication process, deposition method for solar cell precursor layer stack, and solar cell precursor layer stack
CN207441751U (en) A kind of homojunction perovskite thin film solar cell
TWI408823B (en) The solar cell structure of Sanhuan semiconductor and its manufacturing method
CN106449850A (en) High efficiency silicon-based heterojunction double-sided battery and its preparation method
Piralaee et al. Nitride/perovskite tandem solar cell with high stability: Analytical study of adjusting current matching condition
CN102376788A (en) Multilayered film used for solar energy cell, preparation method thereof and purpose thereof
CN101997084B (en) CuPc/ZnO organic/inorganic compound solar battery and preparation method thereof
CN102479848A (en) Solar cell structure of III-V semiconductor and manufacturing method thereof
KR101000051B1 (en) Thin-Film Type Solar Cell and Manufacturing Method thereof
CN201904350U (en) High-efficiency solar cell
CN201904351U (en) Solar cell structure with high photoelectric conversion efficiency
Hamakawa Recent advances in amorphous and microcrystalline silicon basis devices for optoelectronic applications
CN106653922B (en) A kind of solar battery structure of III V race semiconductor and preparation method thereof
CN102231408B (en) Method for manufacturing solar cell by layer transfer
US20110155246A1 (en) Thin film solar cell and manufacturing method thereof
CN102479849A (en) Structure of solar cell with high photoelectric conversion efficiency and method for manufacturing the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120530