CN102394235A - Insulated gate bipolar transistor (IGBT) module and manufacturing method thereof - Google Patents
Insulated gate bipolar transistor (IGBT) module and manufacturing method thereof Download PDFInfo
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- CN102394235A CN102394235A CN2011103609554A CN201110360955A CN102394235A CN 102394235 A CN102394235 A CN 102394235A CN 2011103609554 A CN2011103609554 A CN 2011103609554A CN 201110360955 A CN201110360955 A CN 201110360955A CN 102394235 A CN102394235 A CN 102394235A
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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Abstract
The invention relates to the semiconductor technology field and especially relates to an insulated gate bipolar transistor (IGBT) module and a manufacturing method thereof. The module comprise: a substrate; an IGBT chip and a fast recovery diode (FRD), which are located on the substrate and in the module; an external electrode terminal of an outer surface of the module, wherein the substrate and the IGBT chip, and the substrate and the FRD are connected by using low-temperature bonding. In the invention, because the substrate and the IGBT chip, and the substrate and the FRD are connected by using the low-temperature bonding, reliability of the module can be substantially raised. And because of using a low-temperature bonding connection mode, amounts of materials and components which are needed for making the module are less. A module structure is simple and the reliability of the device can be raised.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly, relate to a kind of insulated gate bipolar transistor module and preparation method thereof.
Background technology
Igbt (Insulated Gate Bipolar Transistor; IGBT) be novel high power device; It has, and on-state voltage drop is low, current capacity is big, input impedance is high, response speed is fast, be easy to advantages such as control, is widely used in industry, information, new forms of energy, medical science, traffic, military affairs and aviation field.
For welded type IGBT module; As shown in Figure 1; Mainly comprise: substrate 1100 has the liner plate 1300 of double-sided metalization, is welded with igbt (IGBT) chip 1410 above the liner plate 1300, fast recovery diode chip (Fast Recovery Diode, FRD) 1420 above the substrate 1100; Also be welded with auxiliary electrode 1600, printed circuit board (PCB) (Printed Circuit Board, PCB) 1700 above the liner plate 1300; The IGBT module-external has gate terminal 1810, emitter terminal 1820, collector terminal 1830.Wherein, between substrate 1100 and the liner plate 1300, adopt the mode of welding to be connected between liner plate 1300 and igbt chip 1410 and the FRD chip 1420, weld layer is a tin silver soldering layer 1200.The positive electrode (comprising grid 1411, emitter 1412) of igbt chip 1410 in the IGBT module and FRD chip 1420 positive electrodes lead to through crude aluminum line 1500 (comprising FRD chip anode 1421) on the metallization face of liner plate 1300 and interconnect, and another effect of this inner board 1300 is the interconnection that realizes the different electrodes of power semiconductor chip (igbt chip 1410, FRD chip 1420).The grid 1411 of igbt chip, emitter 1412, collector electrode 1413 lead to module-external through auxiliary electrode 1600, PCB1700 again, realize the connection with outside terminal (gate terminal 1810, emitter terminal 1820, collector terminal 1830).
Yet, the inventor finds that in realizing process of the present invention there is following problem at least in prior art: because between the substrate in the IGBT module and the liner plate, all adopts the mode of welding to be connected between liner plate and the chip; And layer is generally tin-silver solder, and its fusing point is generally 200 ℃～300 ℃.Its inside chip junction temperature can be up to 175 ℃ during the work of IGBT module; Growth along with the IGBT module operating time; Layer between layer between substrate and the liner plate, liner plate and the chip can cause the reliability of IGBT module to reduce, and then failure phenomenon occur because thermal stress cracks.
On the other hand; Owing to adopt the mode of lead-in wire bonding to connect in the IGBT module between the electrode of each chip; There are a plurality of bonding points in the IGBT module; Because IGBT inside modules material coefficient of thermal expansion coefficient is different, can cause the inefficacy of IGBT module because problems such as stress crack and then cause coming off of bonding point in the long-term work of IGBT module.
Summary of the invention
The embodiment of the invention provides a kind of insulated gate bipolar transistor module and preparation method thereof, reduces the failure phenomenon of IGBT module, improves the reliability of device.
For realizing above-mentioned purpose, the embodiment of the invention provides following technical scheme:
On the one hand, the embodiment of the invention discloses a kind of insulated gate bipolar transistor module, said module comprises:
Substrate;
Be positioned at above the said substrate, the igbt chip of said inside modules, fast recovery diode chip;
The external electrode terminals of module outer surface;
Wherein, between said substrate and the said igbt chip, adopt low-temperature bonding to realize being connected between substrate and the said fast recovery diode chip.
Preferably, the electrodes use of said igbt chip and fast recovery diode chip front side lead-in wire interconnects, and draws module-external through auxiliary electrode, and realization is connected with said external electrode terminals.
Preferably, said external electrode terminals adopts low-temperature bonding to realize being connected with igbt chip and fast recovery diode chip front side corresponding electrode.
Preferably, said employing low-temperature bonding is realized being connected to:
The connection medium of said low-temperature bonding is silver-colored bonded layer.
Preferably, said upper surface of base plate is a metal layer.
Preferably, said substrate is an electric conducting material.
On the other hand, the embodiment of the invention also provides a kind of insulated gate bipolar transistor module, comprising:
Substrate;
Be positioned at above the said substrate, the igbt chip of said inside modules, fast recovery diode chip;
The external electrode terminals of module outer surface;
Wherein, said external electrode terminals adopts low-temperature bonding to realize being connected with igbt chip and fast recovery diode chip front side corresponding electrode.
Preferably, between said substrate and the said igbt chip, adopt welding to realize being connected between substrate and the said fast recovery diode chip.
Preferably, said employing low-temperature bonding is realized being connected to:
The connection medium of said low-temperature bonding is silver-colored bonded layer.
On the other hand, the embodiment of the invention also provides a kind of manufacture method of insulated gate bipolar transistor module, it is characterized in that, said method comprises:
Substrate is provided, adopts low-temperature bonding method to be bonded on the said substrate igbt chip, fast recovery diode chip;
Realize being connected of said igbt chip and fast recovery diode chip and external electrode terminals.
Preferably, being connected to of the said igbt chip of said realization and fast recovery diode chip and external electrode terminals:
The electrodes use lead-in wire of said igbt chip and fast recovery diode chip front side is interconnected, and draw module-external through auxiliary electrode, realization is connected with said external electrode terminals.
Preferably, being connected to of the said igbt chip of said realization and fast recovery diode chip and external electrode terminals:
Adopt low-temperature bonding method to be bonded on said igbt chip and the fast recovery diode chip front side corresponding electrode external electrode terminals.
On the other hand, the embodiment of the invention also provides a kind of manufacture method of insulated gate bipolar transistor module, it is characterized in that, said method comprises:
Substrate is provided, igbt chip, fast recovery diode chip are connected on the said substrate;
Adopt low-temperature bonding method to be bonded on said igbt chip and the fast recovery diode chip front side corresponding electrode external electrode terminals.
Preferably, said igbt chip, fast recovery diode chip are connected on the said substrate is:
Adopt welding method to be fixed on the said substrate igbt chip, fast recovery diode chip.
Compared with prior art; Technique scheme has the following advantages: the insulated gate bipolar transistor module that the embodiment of the invention provides; Because the realization of employing low-temperature bonding is connected between substrate and said igbt chip, between substrate and the said fast recovery diode chip; Replace the connected mode that the available technology adopting tin-silver solder welds, made the reliability of module improve greatly.On the other hand, adopt the connected mode of low-temperature bonding, do not need materials such as liner plate, needed material of manufacturing module and parts still less make modular structure simpler, have improved the reliability of device.
Description of drawings
Shown in accompanying drawing, above-mentioned and other purpose, characteristic and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by actual size equal proportion convergent-divergent.
Fig. 1 is an IGBT module diagram of the prior art;
Fig. 2 is the IGBT module first embodiment sketch map provided by the invention;
Fig. 3 is the IGBT module second embodiment sketch map provided by the invention;
Fig. 4 is IGBT module the 3rd an embodiment sketch map provided by the invention;
Fig. 5 is IGBT module the 4th an embodiment sketch map provided by the invention.
The 1100-substrate; 1200-tin silver soldering layer; The 1300-liner plate; The 1410-IGBT chip;
The grid of 1411-IGBT chip; The emitter of 1412-IGBT chip;
The collector electrode of 1413-IGBT chip; The 1420-FRD chip;
1421-FRD chip anode; 1422-FRD chip negative electrode;
1500-crude aluminum line; The 1600-auxiliary electrode; 1700-PCB; The 1810-gate terminal;
The 1820-emitter terminal; The 1830-collector terminal;
The 2100-insulated substrate; 2100 '-electrically-conductive backing plate;
2110-upper surface of base plate patterned metallization layer; 2120-upper surface of base plate single face metal layer;
2200-tin silver soldering layer; The 2410-IGBT chip; 2411-IGBT chip grid;
2412-IGBT chip emitter; 2413-IGBT chipset electrode;
The 2420-FRD chip; 2421-FRD chip anode; 2422-FRD chip negative electrode;
The 2500-lead-in wire; The 2600-auxiliary electrode; 2700-PCB;
The 2810-gate terminal; The 2820-emitter terminal; The 2830-collector terminal;
2900-silver bonded layer
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
A lot of details have been set forth in the following description so that make much of the present invention; But the present invention can also adopt other to be different from alternate manner described here and implement; Those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed specific embodiment.
Secondly, the present invention combines sketch map to be described in detail, when the embodiment of the invention is detailed; For ease of explanation; The profile of expression device architecture can be disobeyed general ratio and done local the amplification, and said sketch map is example, and it should not limit the scope of the present invention's protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Said as the background technology part, as shown in Figure 1, for welded type IGBT module, chip is fixed in order to be implemented in inside modules, need each chip be welded, and the electrode of chip is interconnected and draws.The welded type IGBT module of prior art has the liner plate 1300 of double-sided metalization, is welded with igbt chip 1410 above the liner plate 1300, FRD chip 1420, also is welded with auxiliary electrode 1600, PCB1700 above the liner plate 1300 above the substrate 1100.Wherein, between substrate 1100 and the liner plate 1300, adopt the mode of welding to be connected between liner plate 1300 and igbt chip 1410 and the FRD chip 1420, weld layer is a tin silver soldering layer 1200.Igbt chip 1410 in the IGBT module, FRD chip 1420 positive electrodes lead to through crude aluminum line 1500 on the metallization face of liner plate 1300 and interconnect, and another effect of this inner board 1300 is the interconnection that realizes the different electrodes of power semiconductor chip (igbt chip 1410, FRD chip 1420).The grid 1411 of igbt chip, emitter 1412, collector electrode 1413 lead to module-external through auxiliary electrode 1600, PCB1700 again, realize the connection with outside terminal (gate terminal 1810, emitter terminal 1820, collector terminal 1830).
The inventor finds that in realizing process of the present invention there is following problem at least in prior art: because between the substrate in the IGBT module and the liner plate, all adopts the mode of welding to be connected between liner plate and the chip; And layer is generally tin-silver solder; Its fusing point is generally 200 ℃～300 ℃; Along with the growth of IGBT module operating time, aging phenomenon can appear in the layer between the layer between substrate and the liner plate, liner plate and the chip, causes the reliability of IGBT module to reduce.On the other hand; Owing to adopt the mode of lead-in wire bonding to connect in the IGBT module between the electrode of each chip; There are a plurality of bonding points in the IGBT module; Because IGBT inside modules material coefficient of thermal expansion coefficient is different, can cause the inefficacy of IGBT module because problems such as stress crack and then cause coming off of bonding point in the long-term work of IGBT module.
In order to improve the reliability of IGBT module, the embodiment of the invention provides and has adopted the IGBT module of low-temperature bonding technology generation for welding manner.Wherein, Low-temperature bonding technology (Low Temperature Joining Technique; LTJT), be exactly in air ambient, (be generally 220 ℃～300 ℃) at a lower temperature; The para-linkage material applies certain pressure and keeps certain hour, thereby realizes a kind of technology that bonding material is connected with bonded interface.
The embodiment of the invention provides a kind of igbt (IGBT) module, comprising:
Substrate;
Be positioned at above the said substrate, the igbt chip of said inside modules, fast recovery diode chip;
The external electrode terminals of said module outer surface;
Wherein, between said substrate and the said igbt chip, adopt low-temperature bonding to realize being connected between substrate and the said fast recovery diode chip.
In embodiment provided by the invention; Between substrate and said igbt chip, between substrate and the said fast recovery diode chip, adopt low-temperature bonding to realize being connected; Replace the connected mode that the available technology adopting tin-silver solder welds, made the reliability of module improve greatly.On the other hand, adopt the connected mode of low-temperature bonding, do not need materials such as liner plate, needed material of manufacturing module and parts still less make modular structure simpler, have improved the reliability of device.
Referring to Fig. 2, the IGBT module first embodiment sketch map provided by the invention.
As shown in Figure 2, in first embodiment of the invention, said module comprises substrate 2100, is positioned at above the substrate 2100, the igbt chip 2410 and the FRD chip 2420 of inside modules.Wherein, between substrate 2100 and the igbt chip 2410, adopt the mode of low-temperature bonding to realize being connected between the FRD chip 2420.
Concrete, said upper surface of base plate is a patterned metallization layer 2110.Said metal layer is divided into a plurality of mutual area isolated, forms the metal layer of single face metallization and band metallization pattern, is used to realize the connection of igbt chip 2410, FRD chip 2420 front electrodes.Here, the material of substrate can be an insulating material, carries out metalized at the upper surface of substrate, forms the layer of metal layer.When the anode with the grid of igbt chip and emitter and FRD chip is drawn out to the metallization face of substrate; In order to distinguish different electrodes; Metal layer is divided into a plurality of different zones, and each zone is isolated from each other, and has so just formed the metal layer of band metallization pattern.
When concrete the realization, igbt chip 2410, FRD chip 2420 and auxiliary electrode 2600 are bonded directly on the metallization face of substrate through the low-temperature bonding technology.As shown in Figure 2, be that the collector electrode 2413 at igbt chip 2410 back sides and the negative electrode 2422 of FRD chip back are incorporated on the metallization face through the low-temperature bonding technical key, thereby realize that igbt chip is connected with the inverse parallel of FRD chip.Preferably, be used to realize that the connection medium that connects can be silver-colored bonded layer 2900.
Igbt chip 2410, the interconnection of FRD chip 2420 front electrodes still adopt lead-in wire to interconnect, and for example use crude aluminum line, aluminium strip or copper cash to interconnect.All chips of inside modules have 5 electrodes: grid 2411 and emitter 2412 that igbt chip is positive, the collector electrode 2413 at the back side; The anode 2421 of FRD chip front side, the negative electrode 2422 at the back side.During concrete the realization, the emitter 2412 that igbt chip is positive and the anode 2421 of FRD chip front side are drawn out on the positive metallized area of liner plate through lead-in wire, realize IGBT emitter 2412 and 2412 interconnection of FRD anode; The collector electrode 2413 at the igbt chip back side is guided on another positive metallized area of liner plate through bonded layer with the negative electrode 2422 of FRD chip back and is realized interconnection; The positive grid 2411 of igbt chip is drawn out on another positive metallized area of liner plate through lead-in wire realizes gate interconnection.Like this, anode 2421 interconnection of the emitter 2412 in igbt chip front and FRD chip front side form a common electrode---the emitters of IGBT module; The collector electrode 2413 at the igbt chip back side forms a common electrode---the collector electrode of IGBT module with 2422 interconnection of the negative electrode of FRD chip back; The positive grid 2412 of all igbt chips interconnects as an electrode---the grid of IGBT module.So the outside of IGBT module is three electrodes altogether: emitter terminal 2820, collector terminal 2830 and gate terminal 2810.In order to realize the module utmost point interconnection of electrode, the IGBT module also comprises auxiliary electrode 2600 and PCB2700.The effect of auxiliary electrode 2600 is that each electrode on the substrate metal face is guided on the PCB2700 plate, and draws module-external through auxiliary electrode, and realization is connected with said external electrode terminals.
Compare with the welded type module of prior art; The IGBT module package material that the embodiment of the invention provides no longer needs liner plate; The connected mode of substrate and chip does not re-use welding manner but adopts the low-temperature bonding technology, connects material and becomes silver-colored bonded layer by tin-silver solder.Like this, because silver point is more than 900 degree, improved the reliability of articulamentum greatly.On the other hand, adopt low-temperature bonding technology, improved the reliability of module greatly.And chip is bonded directly on the substrate, no longer need liner plate, reduced connection number of times and encapsulating material, simplified packaging technology, make modular structure simpler, it is easier to make, more reliable performance.
Referring to Fig. 3, the IGBT module second embodiment sketch map provided by the invention.
In second embodiment provided by the invention, adopt the low-temperature bonding technology contemporary for chips welding and lead key closing process.In the prior art, because employing lead-in wire bonding is realized the interconnection of chip electrode, rupture and cause inefficacy the junction and easy generation of bonding wire of bonding point.And in a second embodiment, adopt low-temperature bonding to replace the lead-in wire bonding, and can directly electrode terminal being bonded on the chip surface electrode, electrode terminal is compared the crude aluminum line and is difficult for rupturing, and has therefore improved the reliability of module.
Said module comprises substrate 2100, is positioned at above the substrate 2100, the igbt chip 2410 and the FRD chip 2420 of inside modules.Wherein, between substrate 2100 and the igbt chip 2410, adopt the mode of low-temperature bonding to realize being connected between the FRD chip 2420.
Concrete, said upper surface of base plate is a single face metal layer 2120.Said metal layer is the block of metal layer.Here, the material of substrate can be an insulating material, carries out metalized at the upper surface of substrate, forms the layer of metal layer.Here, metal layer is the single face metal layer, is not with the metallization pattern.
When concrete the realization, igbt chip 2410, FRD chip 2420 and collector terminal 2830 are bonded directly on the metallization face of substrate through the low-temperature bonding technology.As shown in Figure 3, be that the collector electrode 2413 at igbt chip 2410 back sides and the negative electrode 2422 of FRD chip back are incorporated on the metallization face through the low-temperature bonding technical key, thereby realize that igbt chip is connected with the inverse parallel of FRD chip.Then gate terminal 2810 and emitter terminal 2820 are bonded directly on the chip through the low-temperature bonding technology, realize the interconnection of chip front side electrode and draw module-external.During concrete the realization,, be bonded to respectively on the electrode of each chip, just realized the interconnection of chip front side electrode and drawn module-external owing to a plurality of pins are arranged at gate terminal, emitter terminal, collector terminal bottom.With emitter terminal 2820 is example; The pin of emitter terminal 2820 bottoms is bonded to respectively on the anode 2421 of igbt chip positive emitter 2412 and FRD chip front side, the emitter of all igbt chips of IGBT inside modules and the anode of FRD chip all are drawn out on the emitter terminal 2820.For gate terminal 2810, be that the pin with gate terminal 2810 bottoms is bonded to respectively on the positive grid of each igbt chip, thereby the grid of all igbt chips of IGBT inside modules all is drawn out on the gate terminal.For collector terminal; All be bonded to through a plurality of pins on the metallization face 2120 of substrate 2100 its underpart; Interconnect through the collector electrode 2413 at the bonded layer and the igbt chip back side and the negative electrode 2422 of FRD chip back, the collector electrode 2413 of all igbt chips of inside modules and the negative electrode 2422 of FRD chip all are drawn out on 2830.
Preferably, be used to realize that the connection medium that connects can be silver-colored bonded layer 2900.
Compare with welded type module of the prior art, the IGBT module package material that second embodiment of the invention provides no longer needs liner plate, auxiliary electrode and PCB; Substrate is connected with chip and does not re-use solder technology but adopt the low-temperature bonding technology, connects material and becomes silver-colored bonded layer by tin-silver solder, has improved the reliability of module.On the other hand, the interconnection of inside modules chip becomes the low-temperature bonding technology by Wire Bonding Technology, and the chip front side electrode no longer need be guided on the liner plate earlier and interconnect, but directly draws through the terminal that is bonded to chip front side, has realized two-sided heat radiation.And IGBT module in the prior art can only realize the single face heat radiation.This is because the heat that produces during the inside modules chip operation can transmit downwards through substrate and realize heat radiation, also can upwards transmit through the electrode terminal that is bonded to chip front side and realize heat radiation.Therefore electrode terminal both provided current path, and thermal dissipating path also is provided.And existing IGBT module interconnects on the liner plate owing to the chip front side electrode is drawn out to, and the heat dissipation capability that almost makes progress can only realize downward heat radiation.And IGBT module provided by the invention can realize realizing upwards heat radiation through electrode terminal, also can realize heat radiation downwards, promptly two-sided heat radiation through substrate.
Referring to Fig. 4, IGBT module the 3rd embodiment sketch map provided by the invention.
In the 3rd embodiment provided by the invention, adopt the low-temperature bonding technology contemporary for chips welding and lead key closing process.Said module comprise substrate 2100 ', be positioned at the igbt chip 2410 and the FRD chip 2420 of substrate 2100 ' top, inside modules.Wherein, substrate 2100 ' with igbt chip 2410 between, adopt the mode of low-temperature bonding to realize being connected between the FRD chip 2420.
Concrete, said substrate is electric conducting material, and is concrete, said substrate can be a metal substrate.Here, substrate both as the substrate of module also as an electrode of module.
When concrete the realization, with igbt chip 2410, FRD chip 2420 through the low-temperature bonding technology be bonded directly to metal substrate 2100 ' on.Then gate terminal 2810 and emitter terminal 2820 are bonded directly on the chip through the low-temperature bonding technology, realize the interconnection of chip front side electrode.During concrete the realization,, be bonded to respectively on the electrode of each chip, just realized the interconnection of chip front side electrode and drawn module-external owing to a plurality of pins are arranged at gate terminal, emitter terminal, collector terminal bottom.With emitter terminal 2820 is example; The pin of emitter terminal 2820 bottoms is bonded to respectively on the anode 2421 of igbt chip positive emitter 2412 and FRD chip front side, the emitter of all igbt chips of IGBT inside modules and the anode of FRD chip all are drawn out on the emitter terminal 2820.For gate terminal 2810, be with the pin bonding of gate terminal 2810 bottoms to the positive grid of igbt chip, thereby the grid of all igbt chips of IGBT inside modules all is drawn out on the gate terminal.In the 3rd embodiment provided by the invention; Do not need collector terminal; This be because; Because in embodiments of the present invention IGBT module adopts metal substrate, can be directly with the negative electrode 2422 of the collector electrode 2413 at the igbt chip back side and FRD chip back by metal substrate 2100 ' draw from the bottom of module, no longer need realize that electrode draws from module top through collector terminal.Preferably, be used to realize that the connection medium that connects can be silver-colored bonded layer 2900.
Compare with welded type module of the prior art, the IGBT module package material that third embodiment of the invention provides no longer needs liner plate, auxiliary electrode, PCB and collector terminal; Substrate is connected with chip and does not re-use solder technology but adopt the low-temperature bonding technology, connects material and becomes silver-colored bonded layer by tin-silver solder, has improved the reliability of module.On the other hand, the interconnection of inside modules chip becomes the low-temperature bonding technology by Wire Bonding Technology, and the chip front side electrode no longer need be guided on the liner plate earlier and interconnect, but directly draws through the terminal that is bonded to chip front side, has realized two-sided heat radiation.
In the prior art, because employing lead-in wire bonding is realized the interconnection of chip electrode, rupture and cause inefficacy the junction and easy generation of bonding wire of bonding point.The present invention is directed to this situation, adopt low-temperature bonding to replace the lead-in wire bonding, can directly electrode terminal be bonded on the chip surface electrode, electrode terminal is compared the crude aluminum line and is difficult for rupturing, and has improved the reliability of module.
The present invention also provides a kind of insulated gate bipolar transistor module, comprising:
Substrate;
Be positioned at above the said substrate, the igbt chip of said inside modules, fast recovery diode chip;
The external electrode terminals of module outer surface;
Wherein, said external electrode terminals adopts low-temperature bonding to realize being connected with igbt chip and fast recovery diode chip front side corresponding electrode.
Referring to Fig. 5, IGBT module the 4th embodiment sketch map provided by the invention.Said module comprises substrate 2100, is positioned at above the substrate 2100, the igbt chip 2410 and the FRD chip 2420 of inside modules.Wherein, between substrate 2100 and the igbt chip 2410, adopt the mode of welding to realize being connected between the FRD chip 2420.
Concrete, said upper surface of base plate is a metal layer 2120.Said metal layer is the block of metal layer.Here, the material of substrate can be an insulating material, carries out metalized at the upper surface of substrate, forms the layer of metal layer.Here, metal layer is the single face metal layer, is not with the metallization pattern.
When concrete the realization, igbt chip 2410, FRD chip 2420 and collector terminal 2830 are welded on the metallization face of substrate through tin-silver solder 2200.Then gate terminal 2810 and emitter terminal 2820 are bonded directly on the chip through the low-temperature bonding technology, realize the interconnection of chip front side electrode and draw module-external.Preferably, said connection medium is silver-colored bonded layer 2900.During concrete the realization,, be bonded to respectively on the electrode of each chip, just realized the interconnection of chip front side electrode and drawn module-external owing to a plurality of pins are arranged at gate terminal, emitter terminal, collector terminal bottom.With emitter terminal 2820 is example; The pin of emitter terminal 2820 bottoms is bonded to respectively on the anode 2421 of igbt chip positive emitter 2412 and FRD chip front side, the emitter of all igbt chips of IGBT inside modules and the anode of FRD chip all are drawn out on the emitter terminal 2820.For gate terminal 2810, be with the pin bonding of gate terminal 2810 bottoms to the positive grid of igbt chip, thereby the grid of all igbt chips of IGBT inside modules all is drawn out on the gate terminal.For collector terminal; All be welded to through a plurality of pins on the metallization face 2120 of substrate 2100 its underpart; Link to each other with the collector electrode 2413 at the igbt chip back side and the negative electrode 2422 of FRD chip back through tin silver soldering layer 2200, the collector electrode 2413 of all igbt chips of inside modules and the negative electrode 2422 of FRD chip all are drawn out on 2830.
Preferably, be used to realize that the connection medium that connects can be silver-colored bonded layer 2900.
With compare in the prior art, the IGBT module package material that fourth embodiment of the invention provides no longer needs liner plate, auxiliary electrode and PCB; On the other hand, the interconnection of inside modules chip becomes the low-temperature bonding technology by Wire Bonding Technology, and the chip front side electrode no longer need be guided on the liner plate earlier and interconnect, but directly draws through the terminal that is bonded to chip front side, has realized two-sided heat radiation.
In another embodiment provided by the invention, between said substrate and the said igbt chip, adopt low-temperature bonding to realize being connected between substrate and the said fast recovery diode chip.The connection medium of said low-temperature bonding is silver-colored bonded layer.In this embodiment, substrate is connected with chip and does not re-use solder technology but adopt the low-temperature bonding technology, connects material and becomes silver-colored bonded layer by tin-silver solder, has improved the reliability of module.
The embodiment of the invention also provides a kind of manufacture method of insulated gate bipolar transistor module, and said method comprises:
Substrate is provided, adopts low-temperature bonding method to be bonded on the said substrate igbt chip, fast recovery diode chip;
Realize being connected of said igbt chip and fast recovery diode chip and external electrode terminals.
Preferably; Being connected to of the said igbt chip of said realization and fast recovery diode chip and external electrode terminals: the electrodes use lead-in wire of said igbt chip and fast recovery diode chip front side is interconnected; And draw module-external through auxiliary electrode, realize and being connected of said external electrode terminals.
Preferably, being connected to of the said igbt chip of said realization and fast recovery diode chip and external electrode terminals: adopt low-temperature bonding method to be bonded on said igbt chip and the fast recovery diode chip front side corresponding electrode external electrode terminals.
On the other hand, the embodiment of the invention also provides a kind of manufacture method of insulated gate bipolar transistor module, it is characterized in that, said method comprises:
Substrate is provided, igbt chip, fast recovery diode chip are connected on the said substrate;
Adopt low-temperature bonding method to be bonded on said igbt chip and the fast recovery diode chip front side corresponding electrode external electrode terminals.
Preferably, said igbt chip, fast recovery diode chip are connected on the said substrate is: adopt welding method to be fixed on the said substrate igbt chip, fast recovery diode chip.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.
Though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention.Any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the method for above-mentioned announcement capable of using and technology contents are made many possible changes and modification to technical scheme of the present invention, or are revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (14)
1. an insulated gate bipolar transistor module is characterized in that, said module comprises:
Substrate;
Be positioned at above the said substrate, the igbt chip of said inside modules, fast recovery diode chip;
The external electrode terminals of module outer surface;
Wherein, between said substrate and the said igbt chip, adopt low-temperature bonding to realize being connected between substrate and the said fast recovery diode chip.
2. module according to claim 1; It is characterized in that; The electrodes use lead-in wire of said igbt chip and fast recovery diode chip front side interconnects, and draws module-external through auxiliary electrode, and realization is connected with said external electrode terminals.
3. module according to claim 1 is characterized in that, said igbt chip and fast recovery diode chip front side electrode adopt low-temperature bonding to realize being connected with corresponding external electrode terminals.
4. according to any described module of claim 1 to 3, it is characterized in that said employing low-temperature bonding is realized being connected to:
The connection medium of said low-temperature bonding is silver-colored bonded layer.
5. module according to claim 1 is characterized in that, said upper surface of base plate is a metal layer.
6. module according to claim 1 is characterized in that, said substrate is an electric conducting material.
7. an insulated gate bipolar transistor module is characterized in that, comprising:
Substrate;
Be positioned at above the said substrate, the igbt chip of said inside modules, fast recovery diode chip;
The external electrode terminals of module outer surface;
Wherein, said external electrode terminals adopts low-temperature bonding to realize being connected with igbt chip and fast recovery diode chip front side corresponding electrode.
8. module according to claim 7 is characterized in that, between said substrate and the said igbt chip, adopt welding to realize being connected between substrate and the said fast recovery diode chip.
9. according to claim 7 or 8 described modules, it is characterized in that said employing low-temperature bonding is realized being connected to:
The connection medium of said low-temperature bonding is silver-colored bonded layer.
10. the manufacture method of an insulated gate bipolar transistor module is characterized in that, said method comprises:
Substrate is provided, adopts low-temperature bonding method to be bonded on the said substrate igbt chip, fast recovery diode chip;
Realize being connected of said igbt chip and fast recovery diode chip and external electrode terminals.
11. method according to claim 10 is characterized in that, being connected to of the said igbt chip of said realization and fast recovery diode chip and external electrode terminals:
The electrodes use lead-in wire of said igbt chip and fast recovery diode chip front side is interconnected, and draw module-external through auxiliary electrode, realization is connected with said external electrode terminals.
12. method according to claim 10 is characterized in that, being connected to of the said igbt chip of said realization and fast recovery diode chip and external electrode terminals:
Adopt low-temperature bonding method to be bonded on said igbt chip and the fast recovery diode chip front side corresponding electrode external electrode terminals.
13. the manufacture method of an insulated gate bipolar transistor module is characterized in that, said method comprises:
Substrate is provided, igbt chip, fast recovery diode chip are connected on the said substrate;
Adopt low-temperature bonding method to be bonded on said igbt chip and the fast recovery diode chip front side corresponding electrode external electrode terminals.
14. method according to claim 13 is characterized in that, said igbt chip, fast recovery diode chip are connected on the said substrate is:
Adopt welding method to be fixed on the said substrate igbt chip, fast recovery diode chip.
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Application publication date: 20120328 |