CN102385985A - Metal thin film capacitor and preparation method thereof - Google Patents
Metal thin film capacitor and preparation method thereof Download PDFInfo
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- CN102385985A CN102385985A CN2011102240684A CN201110224068A CN102385985A CN 102385985 A CN102385985 A CN 102385985A CN 2011102240684 A CN2011102240684 A CN 2011102240684A CN 201110224068 A CN201110224068 A CN 201110224068A CN 102385985 A CN102385985 A CN 102385985A
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Abstract
The invention discloses a metal thin film capacitor, which comprises an insulating substrate, wherein the top of the insulating substrate is provided with a metal thin film electrode I with a lead-out end I; the surface of the metal thin film electrode I outside a port of the lead-out end I is provided with a dielectric thin film; and the top of the dielectric thin film is provided with a metal thin film electrode II with a lead-out end II. In the invention, a thin film which is prepared from the materials of tantalum pentoxide and the like with insulation and good chemical stability is used as a dielectric, so that the problems of low dielectric constant, poor heat insulation, poor filming property, low mechanical strength and the like of the dielectric of the normal thin film capacitor are solved. Two layers of metal films are deposited to serve as a top electrode and a bottom electrode through a mask technology, so that the amount of used metal is greatly reduced, the production cost is lowered, and the manufacturing technology is simple. Metals of tantalum, niobium, copper, silver and the like or alloys thereof are selected as the metal thin film electrodes, the resistivity of the metals or the alloys is extremely low, and the metals or the alloys can resist against high temperature and high pressure, so that the metal thin film capacitor has higher stability and can adapt to various complex environments.
Description
Technical field
The present invention relates to a kind of electric capacity and preparation method thereof, especially a kind of metallic film electric capacity and preparation method thereof.
Background technology
The thin-film capacitor range of capacity is wide, and operating voltage range is extremely wide, good temp characteristic, and stability is high, can realize metallization, has self-healing property, is widely used in a plurality of industries such as electronics, space flight, communication, military affairs.Along with China's digitlization, informationization, networked construction process are constantly accelerated; And the development of very lagre scale integrated circuit (VLSIC); Require electronic component miniaturization, filmization and multifunction, this makes conventional plastic film and silicon dioxide reach certain limit as main capacitor dielectric material.Problems such as present electric capacity exists the dielectric constant of medium low, and heat-resisting poor, film forming is poor, and mechanical strength is low.
Summary of the invention
The objective of the invention is: a kind of metallic film electric capacity and preparation method thereof is provided, and its each item performance is outstanding, with low cost, is easy to industrialization, to overcome the deficiency of prior art.
The present invention is achieved in that metallic film electric capacity; Comprise insulated substrate; Be provided with the metal film electrode
of band exit
at the top of insulated substrate; Be provided with dielectric film on metal film electrode
surface outside exit
interface, be provided with the metal film electrode
of band exit
at the top of dielectric film.
On exit
and exit
surface in addition, all be provided with the passivation protection film, its material is silicon dioxide or silicon nitride.Material requirements as the passivation protection film has good insulation performance and temperature stability.
The thickness of metal film electrode
and metal film electrode
is respectively 0.1~0.3 μ m, and their material is one or more the alloy in tantalum, niobium, aluminium, copper, the silver.It is very low that these metals and their alloy have resistivity, but high temperature high voltage resistant has high stability, can adapt to characteristics such as various complicated.
The thickness of dielectric film is 0.04~0.06 μ m, and its material is tantalum pentoxide or aluminium oxide.Their dielectric constant is high, good heat resistance, and good film-forming property, mechanical strength is high, and the insulating properties energy consumption of the dielectric film for preparing can prevent capacitance short-circuit, reduces leakage current.
The preparation method of metallic film electric capacity; Adopt mask technique; Deposition more than one metal film electrode
obtains semi-finished product A on insulated substrate; On semi-finished product A, adopt mask technique to deposit dielectric film, obtain semi-finished product B; On semi-finished product B, adopt mask technique to deposit metal film electrode
; And on metal film electrode
and metal film electrode
, reserve exit
and exit
respectively, obtain semi-finished product C; After semi-finished product C cut, obtain the single metal thin-film capacitor, and draw capacitance electrode from exit, packing obtains finished product after handling again.
On the semi-finished product C surface beyond the exit, deposit the passivation protection film.
Metal film electrodes
, dielectric film and metal film electrodes
deposition method is a physical or chemical vapor deposition.Through each film even compact that vapour deposition process obtains, capacitive property is high.
Semi-finished product A, semi-finished product B, semi-finished product C are heat-treated respectively, and heat treated temperature is 700~800 ℃, and the processing time is 25~35 minutes.As required metal film electrode
, dielectric film and metal film electrode
are heat-treated; Eliminate film defects, improve device performance.
Tantalum pentoxide and aluminium oxide have very high dielectric constant (tantalum pentoxide is 27, and aluminium oxide is 39.9, and plastic film is about 3), fusing point high (tantalum pentoxide is about 1800 ℃), stable chemical performance, corrosion-resistant and Heat stability is good.Be dielectric film capacitor CV density big (be under the same voltage conditions, the capacitance of unit volume is big) with tantalum pentoxide or aluminium oxide etc., (ESR) is little for equivalent series resistance, and leakage current is little.The metal film electrode of deposition has the self-recovery performance, and the reliability of opposing insulation breakdown is higher, can under extraordinary conditions such as high temperature or low temperature, use, and has long-term stability.This thin-film capacitor can be applied in numerous high-tech areas such as electronics, space flight, military affairs.
Owing to adopted above-mentioned technical scheme; Compared with prior art, the present invention adopts tantalum pentoxide etc. both to insulate, and has film that the material of good chemical stability processes again as dielectric; It is low to solve the dielectric dielectric constant of general film capacitor; Problems such as heat-resisting poor, film forming is poor, and mechanical strength is low.And through masking process, deposition double layer of metal film has greatly reduced metal consumption as upper/lower electrode, has reduced production cost, and manufacture craft is simple.Select for use metals such as tantalum, niobium, copper, silver or their alloys as metal film electrode, their resistivity is very low, but and high temperature high voltage resistant, have advantages of higher stability, can adapt to various complicated.In addition, utilize preparation method of the present invention can carry out industrialization production, have important practical significance.Method of the present invention is simple, easy realization of industrialization production, and the cost of making is comparatively cheap, and resulting product has better physical performance and chemical stability, long service life, cost of manufacture is lower, is with a wide range of applications.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is the vertical view of Fig. 1;
Description of reference numerals:
Embodiment
Embodiments of the invention 1: the structure of metallic film electric capacity is as shown in Figure 1, comprises aluminium oxide (Al
2O
3) insulated substrate 4 processed, be provided with the band exit at the top of insulated substrate 4
7 metal film electrode
1, metal film electrode
1 thickness is 0.2 μ m, and material is a tantalum, at exit
The metal film electrode that 6 interfaces are outer
1 surface is provided with the dielectric film 2 that thickness is 0.05 μ m, and its material is a tantalum pentoxide; Be provided with the band exit at the top of dielectric film 2
7 metal film electrode
3, metal film electrode
3 thickness is 0.2 μ m, and material is a niobium; At exit
6 and exit
All being provided with the silicon nitride on the surface beyond 7 is the passivation protection film 5 of material.
The preparation method of metallic film electric capacity is at the aluminium oxide (Al of cleaning
2O
3) lay one deck mask on the insulated substrate, adopt magnetron sputtering method, be material with the tantalum, deposit the thick metal film electrode of more than one 0.20 μ m
, obtain semi-finished product A; A heat-treats with semi-finished product, and heat treated temperature is 750 ℃, and the processing time is 30 minutes; Laying mask handling on the semi-finished product A, and adopted magnetron sputtering method, is material with the tantalum pentoxide, and depositing thickness is the matter film of 0.05 μ m, obtains semi-finished product B; B heat-treats with semi-finished product, and heat treated temperature is 750 ℃, and the processing time is 30 minutes; On the semi-finished product B that handled, laying mask, adopt magnetron sputtering method, is material with the niobium, and depositing thickness is 0.20 μ m metal film electrode
, and at metal film electrode
,
On reserve exit respectively
And exit
, obtain semi-finished product C; C heat-treats with semi-finished product, and heat treated temperature is 750 ℃, and the processing time is 30 minutes; Adopt magnetron sputtering method; With the silicon nitride is material; Deposit the passivation protection film on the semi-finished product C surface beyond the exit, after the semi-finished product C that will deposit the passivation protection film again cuts, obtain the single metal thin-film capacitor; And with coated with graphite back spray silver slurry extraction electrode on exit, packing obtains finished product after handling again.
Embodiment 2 of the present invention: a metal film capacitors, including aluminum nitride insulating substrate 4, the top of the insulating substrate 4 has a leading end with
6 metal film electrodes
1, the metal film electrodes
1 has a thickness of 0.1μm, material is aluminum, the terminals
6 interfaces of the metal film electrodes
1 has a thickness of 0.04μm on the surface of the dielectric film 2, the material is tantalum pentoxide; the top of the dielectric film 2 has a leading end with
7 metal film electrode
3, the metal film electrodes
3 has a thickness of 0.1μm, material for the silver; at terminals
6 and terminations
7 outside surface has a silica-based material passivation film 9.
The preparation method of metallic film electric capacity; On the aluminium nitride insulated substrate of cleaning, lay one deck mask; Adopt magnetron sputtering method; With aluminium is material, deposits the thick metal film electrode of more than one 0.10 μ m
, obtains semi-finished product A; A heat-treats with semi-finished product, and heat treated temperature is 700 ℃, and the processing time is 35 minutes; Laying mask handling on the semi-finished product A, and adopted magnetron sputtering method, is material with the tantalum pentoxide, and depositing thickness is the matter film of 0.04 μ m, obtains semi-finished product B; B heat-treats with semi-finished product, and heat treated temperature is 700 ℃, and the processing time is 35 minutes; On the semi-finished product B that handled, lay mask; Adopt magnetron sputtering method; With silver is material; Depositing thickness is 0.10 μ m metal film electrode
; And on metal film electrode
,
, reserve exit
and exit
respectively, obtain semi-finished product C; C heat-treats with semi-finished product, and heat treated temperature is 700 ℃, and the processing time is 35 minutes; Adopt the PECVD method; On the semi-finished product C surface beyond the exit, deposit silicon dioxide passivation protection film; After the semi-finished product C that will deposit the passivation protection film again cuts, obtain the single metal thin-film capacitor, and to the exit metal spraying; Through the wave-soldering extraction electrode, packing obtains finished product after handling again on gilding layer.
The preparation method of metallic film electric capacity; On the ceramic substrate insulated substrate of cleaning, lay one deck mask; Adopt magnetron sputtering method; With the albronze is material, deposits the thick metal film electrode of more than one 0.30 μ m
, obtains semi-finished product A; A heat-treats with semi-finished product, and heat treated temperature is 800 ℃, and the processing time is 25 minutes; Laying mask handling on the semi-finished product A, and adopted magnetron sputtering method, is material with the aluminium oxide, and depositing thickness is the matter film of 0.06 μ m, obtains semi-finished product B; B heat-treats with semi-finished product, and heat treated temperature is 800 ℃, and the processing time is 25 minutes; On the semi-finished product B that handled, lay mask; Adopt magnetron sputtering; With the copper niobium alloy is material; Depositing thickness is 0.30 μ m metal film electrode
; And on metal film electrode
,
, reserve exit
and exit
respectively, obtain semi-finished product C; C heat-treats with semi-finished product, and heat treated temperature is 800 ℃, and the processing time is 25 minutes; Adopt the PECVD method; With the silicon nitride is material; Deposit the passivation protection film on the semi-finished product C surface beyond the exit, after the semi-finished product C that will deposit the passivation protection film again cuts, obtain the single metal thin-film capacitor; And with coated with graphite back spray silver slurry extraction electrode on exit, packing obtains finished product after handling again.
Claims (8)
1. metallic film electric capacity; Comprise insulated substrate (4); It is characterized in that: the metal film electrode
(1) that is provided with band exit
(6) at the top of insulated substrate (4); Be provided with dielectric film (2) on metal film electrode
(1) surface outside exit
(6) interface, be provided with the metal film electrode
(3) of band exit
(7) at the top of dielectric film (2).
4. metallic film electric capacity according to claim 1 is characterized in that: the thickness of dielectric film (2) is 0.04~0.06 μ m, and its material is tantalum pentoxide or aluminium oxide.
5. the preparation method of a metallic film electric capacity; It is characterized in that: adopt mask technique; Deposition more than one metal film electrode
obtains semi-finished product A on insulated substrate; On semi-finished product A, adopt mask technique to deposit dielectric film, obtain semi-finished product B; On semi-finished product B, adopt mask technique to deposit metal film electrode
; And on metal film electrode
and metal film electrode
, reserve exit
and exit
respectively, obtain semi-finished product C; After semi-finished product C cut, obtain the single metal thin-film capacitor, and draw capacitance electrode from exit, packing obtains finished product after handling again.
6. the preparation method of metallic film electric capacity according to claim 5 is characterized in that: on the semi-finished product C surface beyond the exit, deposit the passivation protection film.
8. the preparation method of metallic film electric capacity according to claim 5 is characterized in that: semi-finished product A, semi-finished product B, semi-finished product C are heat-treated respectively, and heat treated temperature is 700~800 ℃, and the processing time is 25~35 minutes.
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CN2011102240684A CN102385985A (en) | 2011-08-05 | 2011-08-05 | Metal thin film capacitor and preparation method thereof |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103165286A (en) * | 2013-03-01 | 2013-06-19 | 溧阳华晶电子材料有限公司 | Thin film capacitor |
CN103513113A (en) * | 2012-06-28 | 2014-01-15 | 联想(北京)有限公司 | Information acquisition method, equipment and capacitor |
CN111834341A (en) * | 2020-06-17 | 2020-10-27 | 珠海越亚半导体股份有限公司 | Capacitor and inductor embedded structure and manufacturing method thereof and substrate |
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JPS52142257A (en) * | 1976-05-21 | 1977-11-28 | Hitachi Ltd | Thick film capacitor |
US5159524A (en) * | 1989-08-16 | 1992-10-27 | Matsushita Electric Industrial Co., Ltd. | Laser trimable capacitor |
JPH06325968A (en) * | 1993-05-11 | 1994-11-25 | Shimada Phys & Chem Ind Co Ltd | Thin film electric element |
CN1254934A (en) * | 1998-11-23 | 2000-05-31 | 微涂层技术公司 | Formation of thin-film capacitor |
CN1461296A (en) * | 2000-07-24 | 2003-12-10 | 松下电器产业株式会社 | Bis (4-mercaptophenyl) sulfide derivatives, process for preparation thereof and electronic components |
CN101233590A (en) * | 2005-07-29 | 2008-07-30 | Tdk株式会社 | Process for producing thin-film capacitor |
CN202332579U (en) * | 2011-08-05 | 2012-07-11 | 贵州大学 | Metallic film capacitor |
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2011
- 2011-08-05 CN CN2011102240684A patent/CN102385985A/en active Pending
Patent Citations (8)
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US3679942A (en) * | 1971-02-09 | 1972-07-25 | Rca Corp | Metal-oxide-metal, thin-film capacitors and method of making same |
JPS52142257A (en) * | 1976-05-21 | 1977-11-28 | Hitachi Ltd | Thick film capacitor |
US5159524A (en) * | 1989-08-16 | 1992-10-27 | Matsushita Electric Industrial Co., Ltd. | Laser trimable capacitor |
JPH06325968A (en) * | 1993-05-11 | 1994-11-25 | Shimada Phys & Chem Ind Co Ltd | Thin film electric element |
CN1254934A (en) * | 1998-11-23 | 2000-05-31 | 微涂层技术公司 | Formation of thin-film capacitor |
CN1461296A (en) * | 2000-07-24 | 2003-12-10 | 松下电器产业株式会社 | Bis (4-mercaptophenyl) sulfide derivatives, process for preparation thereof and electronic components |
CN101233590A (en) * | 2005-07-29 | 2008-07-30 | Tdk株式会社 | Process for producing thin-film capacitor |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103513113A (en) * | 2012-06-28 | 2014-01-15 | 联想(北京)有限公司 | Information acquisition method, equipment and capacitor |
CN103513113B (en) * | 2012-06-28 | 2017-03-01 | 联想(北京)有限公司 | A kind of information getting method, equipment and electric capacity |
CN103165286A (en) * | 2013-03-01 | 2013-06-19 | 溧阳华晶电子材料有限公司 | Thin film capacitor |
CN103165286B (en) * | 2013-03-01 | 2015-11-25 | 溧阳华晶电子材料有限公司 | A kind of film capacitor |
CN111834341A (en) * | 2020-06-17 | 2020-10-27 | 珠海越亚半导体股份有限公司 | Capacitor and inductor embedded structure and manufacturing method thereof and substrate |
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Application publication date: 20120321 |