CN102196989A - An integrated component and a method of manufacturing an integrated component - Google Patents
An integrated component and a method of manufacturing an integrated component Download PDFInfo
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- CN102196989A CN102196989A CN2009801431399A CN200980143139A CN102196989A CN 102196989 A CN102196989 A CN 102196989A CN 2009801431399 A CN2009801431399 A CN 2009801431399A CN 200980143139 A CN200980143139 A CN 200980143139A CN 102196989 A CN102196989 A CN 102196989A
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- cap layer
- integrated component
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0077—Other packages not provided for in groups B81B7/0035 - B81B7/0074
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0163—Reinforcing a cap, e.g. with ribs
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Abstract
An integrated component (100) comprises a substrate (102), a cap (104) formed on the substrate (102) to enclose a cavity (106) with a surface of the substrate (102), and a reinforcement structure (108) for reinforcing the cap (104) and extending from a central portion of the cap (104) along the cap (104).
Description
Technical field
The present invention relates to integrated component.
In addition, the present invention relates to the manufacture method of integrated component.
Background technology
MEMS (MEMS) can be expressed the equipment of being made by unusual small size technology, and can be incorporated into nano-electromechanical system (NEMS) in nanometer scale.MEMS also is known as micro-machine.Particularly, MEMS can be made up of the unit of 1 to 100 micron size.MEMS equipment can comprise the central location of the deal with data such as microprocessor and such as microsensor with the mutual a plurality of parts in the external world.
In order to protect the purpose of MEMS parts (for example mechanical movable part), can carry out the cap that adds of MEMS.
US 2002/0001874 discloses the device that is used to seal logic chip, and this device comprises substrate that logic chip is installed on it and is placed on the substrate and the mold cap layer of covering logic chip.This mold cap layer comprises that at least one has enough sizes and shape is extended, and provides support structure to give a part of substrate.
JP 2007184815 discloses the MEMS resonator that is used to reduce the high Q value of having of energy loss, although provide be positioned at one with identical plank on and its intrinsic frequency different MEMS structure mutually.In the MEMS resonator, be cross-coupled as the position of the vibration nodal point of beam with free ends in being connected by coupling part and MEMS structure, wherein, be cross-coupled in connection as the position of the vibration nodal point of beam with free ends.This MEMS structure be multilayer and ring-type be formed on the same level of plank, the coupling part is connected by brace summer with the coupling part of MEMS structure, and the base portion of coupling part and plate is connected by support arm, the MEMS structure correspondingly has different intrinsic frequency (resonant frequency), and can drive arbitrary MEMS structure selectivity ground.
US 4,132, and 570 disclose the support to solar battery array, and this support comprises the device of the relative displacement that is used to locate solar cell and limit battery.Except that at least one whole terminal box, also provide whole bracing piece.Support and also to comprise to be used for to have and support or the perimeter edge of the model of installation code.
Yet the mechanical strength of integrated device is still enough not strong.
Summary of the invention
The purpose of this invention is to provide a kind of integrated component with sufficient mechanical strength.
To achieve these goals, provide manufacture method according to the integrated component and the integrated component of independent claims.
According to exemplary embodiment of the present invention, a kind of integrated component (for example monolithic integrated component) is provided, comprising: substrate (can have first type surface); Be formed at the cap layer of (for example on first type surface) on the substrate; Surface (part that for example has first type surface) sealed hollow by cap layer and substrate; And ruggedized construction, extend from the core of cap layer along the cap layer (for example having one or more arms that partly extend to cap layer girth).
According to another exemplary embodiment of the present invention, a kind of manufacture method of integrated component is provided, wherein this method comprises: form the cap layer with the surface enclosed cavity with substrate on substrate; And the ruggedized construction that is formed for the reinforced cap layer and extends from the core of cap layer along the cap layer.
Ruggedized construction and not exclusively being positioned at along the border of cap layer can specifically be represented in term " core of cap layer ", but at least in part with the enough distances of boundary interval, therefore especially support arrangement in part away from the cap layer on border.Such core is for example at may be especially easily by mechanical failure during such as the encapsulation that the cap layer is encapsulated with epoxy resin.In the vertical view of substrate and cap layer, at least one part of ruggedized construction can be arranged on the center of gravity of cap layer.In cap layer round-shaped, core can comprise (or can be approaching at least) center of circle.
Any structure, parts or the device of any machinery, electricity, magnetic and/or electric function can specifically be represented to realize in term " parts ".This means that between the conventional operating period, electricity, magnetic and/or electromagnetic signal can be applied to integrated component and/or be produced by integrated component, perhaps the mechanical performance of parts can help its function.
Term " integrated " can specifically represent to small part, particularly complete parts can form an integral body.Term " integrated " can represent specifically that parts are single chip integrated, and promptly parts are formed on the public substrate and/or in the public substrate, for example use the microtechnology such as semiconductor technology.
Cladding element can specifically be represented in term " cap layer ", this cladding element can be placed on smooth (or crooked) surface portion of substrate for example, and this capping unit provides the space of sky or hollow with the surface portion of the substrate that is covered by the cap layer.The space of this hollow can partly be limited by the curved inner surface of for example cap layer part.
Term " substrate " can be used for defining generally at be positioned under interested layer or the part and/or on the element of layer.Simultaneously, substrate can be cambial any other base, for example semiconductor wafer such as silicon chip or silicon on it.The substrate of other materials also is possible, as plastics, and glass, pottery etc.
Two the discontinuous summits of structure of polygonal shape (for example in vertical view) or polyhedron shape or the line at angle can specifically be represented to connect in term " diagonal ".Polygon can be expressed as the geometry that closed path limited by the finite sequence that comprises straightway.These line segments can be called polygonal edge or limit, and two crossing points in edge can be expressed as polygonal summit or angle.Polygonal example is rectangle (specifically being square), pentagon, hexagon etc.
Micro electromechanical structure can specifically be represented in term " MEMS ".For example, the signal of telecommunication of modification can cause the special exercise of the movable part of micro electromechanical structure (MEMS), and vice versa.
According to exemplary embodiment of the present invention, at having the element that protects the cavity of resisting external action by the cap layer, can provide the firm especially protection that prevents mechanical failure.In this case, the inventor surprisedly recognizes, be provided near the geometry of cap layer or mass centre (for example in vertical view along or substantially along the diagonal of cap layer polygonal shape) ruggedized construction of arranging makes the cap layer for example firmly prevent mechanical failure during forming mold (moulding) process of encapsulation with the covering cap layer.During such mold process, high mechanical stress can act on the cap layer.Have one or more cores and for example can make with low cost, and the inside (immovable element or similar elements can be provided) of cavity is not had appreciable impact towards the pillar of polygonal summit extension or the ruggedized construction of arm from the cap layer.
According to exemplary embodiment, can provide the reliability of the MEMS device that a kind of enhancing added cap and the system of robustness.Such system can comprise the MEMS device, and this MEMS device comprises: the cap layer; And the supporting construction that is provided and is arranged as the support cap layer, wherein can be along the diagonal or the directed supporting construction of diameter of cap layer.For example, supporting construction can base cruciferous.The cap layer that can have center support with rational cost manufacturing, for example, by using the anisotropic etching technology, for example by carrying out heating potassium hydroxide (KOH) etching.Advantageously, such framework can strengthen the reliability and the robustness of integrated component, and for example this integrated component can be configured to add the MEMS equipment of cap.
During the mold process, MEMS cap layer can be exposed under the high pressure.Therefore, exemplary embodiment provides the supporting construction that is used for the cap layer.Embodiments of the invention provide the newel of cross design, and the arm of newel extends to improve support strength along the diagonal of cap layer.Can use KOH that such structure is carried out etching, KOH make in addition the manufacturing of the structure that is similar to inverted pyramid of higher intensity also become possibility.Centralized positioning post with support arm can be along hexagonal one or more diagonal, along one or more diameters of circle, or extend along one or more axles (for example major axis and/or minor axis) of ellipse.Embodiment can allow by saving the space with inverted pyramid shape manufacturing center reference column.In an embodiment, can provide simple, diagonal angle alignment, criss-cross post, increase support strength for example to use diagonal or diameter.
Then, will other exemplary embodiments of integrated component be described.Yet these embodiment also are applicable to the method for making integrated component.
In vertical view (for example on first type surface), the cap layer can form with polygonal shape on substrate.Ruggedized construction can be partly or wholly extended along the diagonal of the polygonal shape of cap layer.Utilization is extended this embodiment of reinforcement with the cap layer of protection polygonal shape along diagonal; can obtain firm especially being configured to and protect polygon cap layer, this polygon cap layer is subject to the influence of mechanical failure especially during stress applies along corresponding direction with diagonal.When the encapsulation of such cap layer trussell, can be that 80 crust and bigger pressure are applied on the diagonal of rectangle for example with value.
In another embodiment, the cap layer can form with circle or ellipse or oval shape in vertical view.Under round-shaped situation, ruggedized construction can be partly or wholly extended and can be especially across the center of circle along diameter of a circle.In oval-shaped configuration, along the mechanical stress of the line segment that passes oval focus and end points maximum can be arranged, this line segment also can be called as major axis.Major axis is to connect oval last two nose sections that point is obtained.In an embodiment, the center of gravity of ellipse can be extended and can comprise to ruggedized construction along major axis.
Ruggedized construction can form with cap layer integral type.Such embodiment can form on the basis of single body, and this ruggedized construction and cap layer are by the embodiment low cost of manufacture of same material manufacturing and highly stable mechanical arrangements is provided.
Alternatively, can be configured to can two independent structures connected to one another for ruggedized construction and cap layer.In such embodiments, can be especially the cap layer be optimized, and can especially ruggedized construction be optimized about the reinforcement performance such as mechanical robustness at the purposes of cap layer.In addition, the manufacture process that is used to make ruggedized construction and cap layer can be separated.
Ruggedized construction can be arranged in the surface of cap layer at cavity inside.In such embodiments, the external environment condition of cap layer keeps fully not being subjected to the influence of mechanical consolidation, and the profile that produced by ruggedized construction also can not occur at the outer surface of cap layer.
Alternatively, ruggedized construction can be arranged in the surface of cap layer in the cavity outside, this ruggedized construction is opposite with respect to cap layer direction with cavity.In such embodiments, the layout of the ruggedized construction that the cap layer is outer make make simple (using simple deposition and/or etching processing) and, keep the cap layer of sealing fully unaffected simultaneously, make for the movably element in the cavity, not exist machinery to hinder.
Ruggedized construction can be criss-cross (for example, with reference to Fig. 3).The inventor recognizes that surprisedly this cross structure that is provided with at the center provides stable especially layout, and this cross structure has and extends towards polygonal center or point to or directed or even reach the arm at polygonal center.Such cross geometry can use etching processing easily to make, and provides firm protection to prevent mechanical failure.
This preferred embodiment relates to the reinforcing framework of inverted pyramid shape.In other words, the sealing of ruggedized construction can have pyramidal geometry.Yet the conditioning that etching or other are fit to can be removed this pyramidal part so that support with arm that the drift angle towards polygon cap layer extends or netted layout to be provided.When viewed from above, this inverted pyramid shape of ruggedized construction can have cross.
Function element can be arranged in cavity inside.Such function element can provide any desired electricity and/or mechanical function in the cap layer inside that is used for the defencive function element.
Displaceable element can be arranged in the inside of cavity.For example, so removable unit can be the electric mechanical switch with cantilever beam, and the cantilever place has conductive pad, and has conductive pad on the conductive pad opposite surfaces on the cantilever.When applying voltage between two conductive pads, this beam can be forced to surface curvature, to allow the electrical connection of selectivity closure between two electrodes on cantilever and the opposed surface, thereby can realize the electric mechanical switch function.Yet, but other displaceable elements also are possible, for example removable sensor probe, microgenerator, grinder, mixed-arrangement etc.
Integrated component can also comprise the potted component that is arranged between substrate and the cap layer, thereby forms sealed cavity hermetically.Such cavity can be airtight, for example sealing gland or fluid-tight, for example waterproof.Therefore, such layout also can be used to use the fluid such as gas and/or liquid in the cavity or require not exist really in the cavity system of such fluid.Therefore, in an embodiment, cavity can be drained.For example sealing unit can be sealing ring or the ring of arranging along cap layer girth, with the borderline region between sealing cap layer and the substrate.Such sealing also can realize by the sealed binder that uses between substrate and cap layer.
Integrated component can comprise the encapsulating structure of covering cap layer.Such encapsulating structure can form by mold, around the encapsulation caps layer.Owing to exist to point to the drift angle of polygon cap layer or point to the existence of ruggedized construction on border of the cap layer of adjacent substrates more at large, formation by (can introduce high pressure and therefore introduce mechanical stress) encapsulating structures such as molds will can not have negative effect to the inside of cap layer, and keep the function of integrated component unaffected.
Substrate can be a semiconductor substrate.Therefore, integrated component can come monolithic integrated with semiconductor technology.For example, such semiconductor substrate can be silicon substrate (for example SOI substrate or pure crystalline silicon substrates), germanium substrate, III family-V family substrate or GaAs substrate.
For example, integrated component can be actuator, micro electronmechanical mechanism, micro-structural, nanostructured, controller or switch (for example RF switch).Integrated component is particularly suitable for using comprising displaceable element all, because cavity provides and the protection that prevents the cavity breakage can be guaranteed mobile in cavity of normal operation and displaceable element.
In adopting the embodiment of integrated component as micro electromechanical structure (MEMS), at a large amount of purposes, at the example of such MEMS is accelerometer in the Hyundai Motor, be included in air bag safe in utilization in the collision, accelerometer in consumer-elcetronics devices, for example game console, personal multimedia player, mobile phone or digital camera.The other field of using is to use MEMS gyroscope and other to detect the application (for example adopt roll cage or trigger dynamical stability control) of driftage in Hyundai Motor.In addition, the other field of application is pressure sensor (for example vehicle tire pressure sensor and a disposable blood pressure sensor).Can have on its surface and adopt such MEMS in the display of a large amount of micro-reflectors.Other embodiment adopts integrated component in the light switch technology, this technology is used at the switch technology of data communication and calibration.Other application relate to the biologic applications in medical science and healthy correlation technique, for example laboratory, biology sensor, chemical sensor on the chip.In addition, MEMS can be used for the interference modulations display display of mobile device (for example at) of consumption electronic product to create interference modulations.Another example of MEMS is for example based on RF (radio frequency) switch of removable film or movable boom beam.At all these application, the cap layer is reinforced and can be allowed to improve robustness.
Next, other the exemplary embodiment of this method will be introduced.Yet these embodiment also are applicable to integrated component.
This ruggedized construction can form with anisotropic etching.Term " anisotropic etching " can specifically be represented to be included in the material along the etching of the different etch rate of different directions.Anisotropic etching can be improved by the corresponding selection of the institute's etch material different etch rates of different crystalline axes (for example along) and/or by selected etching technics.For example, can be on the cap layer applied layer, and this layer can form pattern by anisotropic etch process, aims at ruggedized construction thereby form.This can allow to limit the geometry accurately of formed structure.At cap layer and ruggedized construction is in the alternative of integrated formation, and this cap layer can have bigger thickness and can be etched to form ruggedized construction on its surface.
Verified particularly advantageous is that ruggedized construction is to be formed by the anisotropic etching of using heating potassium hydroxide as etching agent (KOH etching).In this process, verified is the smooth inverted pyramid post that can make as ruggedized construction.
At any method step, can realize from the known traditional handicraft of semiconductor technology.Formation layer or parts can comprise deposition technique or the sputter as CVD (chemical vapor deposition), PECVD (plasma enhanced chemical vapor deposition), ALD (ald) and so on.Mobile layer or parts can comprise as the lithographic technique of wet etching, vapor etch etc. and so on as the patterning techniques of optical lithography, UV photoetching, beamwriter lithography etc. and so on.
Embodiments of the invention are not limited to certain material, make to use many different materials.For conductive structure, can use metallization structure, silicide structural or polysilicon structure.For semiconductor regions or parts, can use crystalline silicon.For insulated part, can use silica or silicon nitride.
This structure can be formed on the pure crystal silicon wafer or SOI (SOI) wafer on.
Can realize any treatment technology, for example CMOS, BIPOLAR, BICMOS.
According to described embodiment example hereinafter, above-mentioned aspect of the present invention and other aspects are conspicuous, and are that these embodiment with reference to invention describe.
Description of drawings
The example of reference example will describe the present invention in more detail hereinafter, but the present invention is not limited to this.
Fig. 1 and Fig. 2 show integrated component according to an exemplary embodiment of the present invention.
Fig. 3 to Fig. 7 shows the vertical view that possesses the cap layer of ruggedized construction according to an exemplary embodiment of the present invention towards the first type surface of substrate.
The specific embodiment
Explanation among the figure is schematic.In different figure, similar or components identical possesses identical Reference numeral.
Below, some that relate to the inventor are familiar with substantially, are familiar with substantially based on these and have developed the reliability that is used to strengthen the MEMS equipment of having developed that adds cap and the exemplary system embodiment of robustness.
Exemplary embodiment relates to MEMS (MEMS) or any other electronics and/or mechanical device comprising the chamber of sealing.One aspect of the present invention is reliability and the robustness that strengthens the MEMS equipment that is added cap towards the support that is positioned at the center (for example the cross of cavity supports) of extension of cap layer border or orientation by using.
MEMS equipment can comprise MEMS tube core, cap layer and sealing.At MEMS equipment, the cavity of sealing can help allowing movable part to move in cavity.For protection equipment is avoided machinery and environmental damage, can seal or encapsulate the MEMS equipment that adds cap with the epoxy casting die compound, perhaps need sometimes MEMS equipment is encapsulated with miscellaneous part or equipment, to form system in package (SiP).Yet there is hot Mechanical Reliability challenge in the encapsulation that adds the MEMS equipment of cap, because have the damage that the MEMS equipment of cavity is subject to encapsulate the load object, especially, at the mold pressure that shifts during mold is handled.Under mold pressure, the inner surface of cap layer suffers high tensile stress.Mold pressure can cause integrity problem like this, comprises the cracking of cap layer and MEMS tube core, and cap layer over-deflection, and these problems may have adverse influence to the electrical property of MEMS.
For stress levels and the skew that reduces the cap layer, it can be favourable using the partial support center of cap layer (for example) at the cap layer.The design of such support should consider that under mold pressure, the distribution pattern of cap layer place's stress and distortion is such zone: the zone with the most heavily stressed grade and maximum distortion is all the time along the diagonal of cap layer or along the diameter of cap layer.
It is a kind of by using specific support structures to strengthen the reliability of MEMS equipment and the method for robustness that embodiments of the invention provide.Advantageously, can use cross to support, this supports along cap layer diagonal orientation.In this method, this structure can reduce the tensile stress and the skew of cap layer significantly.
Cap layer with such center support can use the anisotropic etching technology to make, and for example heats potassium hydroxide (KOH) etching.From the viewpoint of machinery, at the robustness of MEMS equipment, the advantage of anisotropic etching is the structure that can be created to pyramid shape at specially suitable support.
Fig. 1 show according to exemplary embodiment of the present invention comprise cap layer 104 and sealing 112 add cap MEMS equipment 100.
Fig. 1 shows the sectional view of MEMS parts 100, and these parts 100 are on the direction perpendicular to the first type surface 116 of silicon substrate 102, and each parts of MEMS equipment 100 are positioned on the silicon substrate 102.
Fig. 1 shows silicon substrate 102 and cap layer 104, and in overlooking Figure 150 (this figure is the view on the first type surface of substrate 102), cap layer 104 is formed at or is incorporated into silicon substrate 102 with rectangle.
Seal respectively by the surface of cap layer 104 and substrate 102 and to have formed cavity or ducted body 106; Promptly in this case, cavity is limited by the part of the first type surface 116 of silicon substrate 102 and the inner surface of cap layer 104.On cap layer 104 and cavity 106 ruggedized construction 108 is provided in appearance, make the mechanical consolidation that has realized cap layer 104.
As overlook shown in Figure 150, the ruggedized construction 108 that is used for reinforced cap layer 104 is extended with two diagonal of cross from the core of cap layer 104 along rectangle cap layer 104.
In the embodiment in figure 1, deposition ruggedized construction 108 on the outer surface of cap layer 104.Ruggedized construction 108 is arranged in the outer surface of cap layer 104, promptly is arranged in the outside of cavity 106.As overlook shown in Figure 150, ruggedized construction 108 is criss-cross, and has the leg that extends to the drift angle of rectangle cap layer 104 from the center of gravity of the vertical view of cap layer 104.
In the inside of cavity 106, the MEMS circuit 110 that comprises movable part is suitable for moving freely in hollow space 106 inside of cap layer 104.In addition, arrange that sealing ring 112 is to seal hermetically about cavity 106 with respect to environment on every side.
Next, with reference to figure 2, with describe according to exemplary embodiment of the present invention have cavity inside ruggedized construction 108 add cap MEMS equipment 200.
As shown in Figure 2, use the die attachment 204 on the attachment base 206 to fix MEMS tube core 102 or substrate.Now, can be arranged in the inside of cavity 106 with the ruggedized construction 108 that the cross shown in Fig. 1 is realized.In addition, provide the encapsulating structure of epoxy casting die compound 202 as the outer surface of covering cap layer 104.Because providing of ruggedized construction 108 can be carried out mechanical protection to cap layer 104 during the processing (this relates to applying of main mechanical stress) of epoxy casting die compound 202.
The cross that Fig. 3 shows according to another embodiment of the invention supports 108 vertical view, this cross support 108 have towards but do not reach the leg that the drift angle of rectangle cap layer 104 extends.
Fig. 4 shows an alternative embodiment of the invention, and wherein ruggedized construction 108 is the single diagonal beams that extend to another vertical angles of rectangle cap layer 104 from a drift angle of rectangle cap layer 104.
Fig. 5 shows another embodiment of ruggedized construction 108, and this ruggedized construction 108 comprises to be pointed to but do not reach four legs of the drift angle of rectangle cap layer 104, and comprises four beams that the center line to rectangle cap layer 104 extends.
Fig. 6 shows the vertical view 600 of the hexagon cap layer 104 of the ruggedized construction 108 with star, and this ruggedized construction 108 has the leg to all 6 drift angles extensions of hexagon cap layer 104.Therefore, this ruggedized construction 108 is configured to have the centre strut or the post of six legs that form star structure 108.
Fig. 7 shows the vertical view 700 of the oval shaped cap layer 104 of the ruggedized construction 108 with beam and column shape.This ruggedized construction 108 comprises newel part 702 and beam part 704, and the latter extends along oval 104 major axis 706.
At last, it should be noted that the foregoing description illustrates and unrestricted the present invention, under the prerequisite of the scope that does not deviate from claims, those skilled in the art can design many alternatives.In the claims, any Reference numeral between the bracket should not constitute the restriction to claim.Verb " comprises " and element or other elements beyond the step or the existence of step that claim is stated do not got rid of in the use of modification.The element singulative is not got rid of the plural form of this element, and vice versa.In having enumerated the equipment claim of some devices, the some devices in these devices can be realized by same software or hardware.In mutually different dependent claims, set forth the combination that certain measures does not represent advantageously to use these measures.
Claims (18)
1. an integrated component (100), described integrated component (100) comprising:
Substrate (102);
Be arranged in the cap layer (104) on the substrate (102);
Surface (102) sealed hollow (106) by cap layer (104) and substrate;
The ruggedized construction (108) of extending from the core of cap layer (104) along cap layer (104).
2. integrated component according to claim 1 (100),
Wherein, in vertical view, cap layer (104) is gone up with polygonal shape at substrate (102) and is formed, and ruggedized construction (108) is along one or more diagonal extensions of the polygonal shape of cap layer (104).
3. integrated component according to claim 1 (100),
Wherein, in vertical view, cap layer (104) is gone up with circle or elliptical shape at substrate (102) and is formed, and ruggedized construction (108) extends along the round-shaped diameter of cap layer (104), perhaps extends along the major axis (706) of the elliptical shape of cap layer (104) at least.
4. integrated component according to claim 1 (100),
Wherein, ruggedized construction (108) forms with cap layer (104) is whole.
5. integrated component according to claim 1 (100),
Wherein, ruggedized construction (108) and cap layer (104) are configured to separated structures.
6. integrated component according to claim 1 (100),
Wherein, ruggedized construction (108) is disposed on the surface of the interior cap layer of cavity (106) (104).
7. integrated component according to claim 1 (100),
Wherein, ruggedized construction (108) is disposed on the surface of cavity (106) outer cap layer (104).
8. integrated component according to claim 1 (100),
Wherein, ruggedized construction (108) is arranged in the surface of the interior cap layer of cavity (106) (104) and support or the pillar between the substrate (102).
9. integrated component according to claim 1 (100),
Wherein, ruggedized construction (108) is criss-cross.
10. integrated component according to claim 1 (100),
Wherein, ruggedized construction (108) is shaped to inverted pyramid.
11. integrated component according to claim 1 (100),
Comprise: being arranged in the function element (110) in the cavity (106), specifically is the displaceable element (110) that is arranged in the cavity (106), more particularly is arranged in the displaceable element (110) that can move freely in the hollow space of cavity (106).
12. integrated component according to claim 1 (100),
Comprise: be arranged in the potted component (112) between substrate (102) and the cap layer (104) thus form the cavity (106) of airtight sealing
13. integrated component according to claim 1 (200),
Comprise: the encapsulating structure (202) of covering cap layer (104) at least in part.
14. integrated component according to claim 1 (100),
Wherein, substrate (102) is a semiconductor substrate, specifically is in IV family semiconductor substrate, silicon substrate, germanium substrate, III family-V family substrate and the GaAs substrate.
15. integrated component according to claim 1 (100),
Described integrated component (100) is suitable for as one in actuator, resonator, micro electromechanical structure, micro-structural, nanostructured, controller and the switch.
16. a method of making integrated component (100), described method comprises:
Go up formation cap layer (104) at substrate (102), with surface enclosed cavity (106) with substrate (102);
The ruggedized construction (108) that is formed for reinforced cap layer (104) and extends from the core of cap layer (104) along cap layer (104).
17. method according to claim 16,
Comprise: form ruggedized construction (108) by anisotropic etching.
18. method according to claim 16,
Comprise: use heating potassium hydroxide to come to form ruggedized construction (108) by anisotropic etching as etching agent.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08105689 | 2008-10-29 | ||
| EP08105689.7 | 2008-10-29 | ||
| PCT/IB2009/054533 WO2010049837A2 (en) | 2008-10-29 | 2009-10-15 | An integrated component and a method of manufacturing an integrated component |
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|---|---|
| CN102196989A true CN102196989A (en) | 2011-09-21 |
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| CN2009801431399A Pending CN102196989A (en) | 2008-10-29 | 2009-10-15 | An integrated component and a method of manufacturing an integrated component |
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| EP (1) | EP2349914A2 (en) |
| CN (1) | CN102196989A (en) |
| WO (1) | WO2010049837A2 (en) |
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| CN106542493A (en) * | 2015-09-16 | 2017-03-29 | 日月光半导体制造股份有限公司 | Semiconductor device package and the method for manufacturing which |
| CN106715326A (en) * | 2014-09-03 | 2017-05-24 | 追踪有限公司 | Covering for a component and method for producing a covering for a component |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8746626B1 (en) | 2009-11-13 | 2014-06-10 | The Boeing Company | Adaptive structural core for morphing panel structures |
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|---|---|---|---|---|
| US7405924B2 (en) * | 2004-09-27 | 2008-07-29 | Idc, Llc | System and method for protecting microelectromechanical systems array using structurally reinforced back-plate |
-
2009
- 2009-10-15 WO PCT/IB2009/054533 patent/WO2010049837A2/en active Application Filing
- 2009-10-15 EP EP09744460A patent/EP2349914A2/en not_active Withdrawn
- 2009-10-15 CN CN2009801431399A patent/CN102196989A/en active Pending
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|---|---|---|---|---|
| US5838093A (en) * | 1996-02-23 | 1998-11-17 | Fujitsu Limited | Piezoelectric element package in which a piezoelectric element on a chip carrier is reliably shielded by using a cap |
| US6462392B1 (en) * | 2000-02-04 | 2002-10-08 | Robert Bosch Gmbh | Micromechanical cap structure and the respective manufacturing method |
| WO2001058803A2 (en) * | 2000-02-10 | 2001-08-16 | Robert Bosch Gmbh | Method for producing a micromechanical component, and a component produced according to said method |
| CN1690764A (en) * | 2004-04-26 | 2005-11-02 | 松下电器产业株式会社 | Microactuator |
| CN1769957A (en) * | 2004-09-27 | 2006-05-10 | Idc公司 | System and method for protecting microelectromechanical systems array using structurally reinforced back-plate |
| FR2901264A1 (en) * | 2006-05-22 | 2007-11-23 | Commissariat Energie Atomique | MICRO COMPONENT HAVING A CAVITY DELIMITED BY A COVER WITH IMPROVED MECHANICAL RESISTANCE |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106715326A (en) * | 2014-09-03 | 2017-05-24 | 追踪有限公司 | Covering for a component and method for producing a covering for a component |
| CN106715326B (en) * | 2014-09-03 | 2021-02-02 | 追踪有限公司 | Cover for a device and method for manufacturing a cover for a device |
| US11180364B2 (en) | 2014-09-03 | 2021-11-23 | Snaptrack, Inc. | Covering for a component and method for producing a covering for a component |
| CN106542493A (en) * | 2015-09-16 | 2017-03-29 | 日月光半导体制造股份有限公司 | Semiconductor device package and the method for manufacturing which |
| US10689249B2 (en) | 2015-09-16 | 2020-06-23 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package including a wall and a grounding ring exposed from the wall |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010049837A2 (en) | 2010-05-06 |
| WO2010049837A3 (en) | 2011-02-24 |
| EP2349914A2 (en) | 2011-08-03 |
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