CN102130185A - Dual-layer silicon nitride film for crystalline silicon solar cell and preparation method thereof - Google Patents
Dual-layer silicon nitride film for crystalline silicon solar cell and preparation method thereof Download PDFInfo
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- CN102130185A CN102130185A CN2011100276709A CN201110027670A CN102130185A CN 102130185 A CN102130185 A CN 102130185A CN 2011100276709 A CN2011100276709 A CN 2011100276709A CN 201110027670 A CN201110027670 A CN 201110027670A CN 102130185 A CN102130185 A CN 102130185A
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Abstract
The invention discloses a dual-layer silicon nitride film for a crystalline silicon solar cell and a preparation method thereof and relates to the technical field of crystalline silicon solar cell production. The dual-layer silicon nitride film consists of two silicon nitride sublayer films with different refractive indexes; and the two silicon nitride sublayer films are obtained in a one-time PECVD (Plasma Enhanced Chemical Vapor Deposition) process. In two sublayers, the first sub layer (an inner layer) in contact with a silicon chip has higher refractive index (that is to say, n1 is more than n2) compared with that of the second sublayer film (an outer layer). The one-time deposition process is carried out by two stages; and in the two stages, two different flow ratios of silane to ammonia gas, two different growth temperatures, two different high-frequency output powers of a power supply, two different deposition times and two different work air pressures are applied. When the dual-layer silicon nitride film is used for the crystalline silicon solar cell, compared with a single-layer silicon nitride film, the dual-layer silicon nitride film has better antireflection effect and better surface passivation efficiency and the photoelectric conversion efficiency of the solar cell can be improved, therefore, the dual-layer silicon nitride film has higher practical value.
Description
Technical field:
The present invention relates to the technical field that a kind of crystal-silicon solar cell is produced, be specifically related to a kind of double-deck silicon nitride film that is used for crystal-silicon solar cell and preparation method thereof.
Background technology:
A kind of approach that improves the conversion efficiency of crystal-silicon solar cell is to reduce the reflectivity of silicon chip surface and increase surface passivation effect.The industrialization crystal-silicon solar cell uses PECVD cvd nitride silicon thin film usually, and prepared silicon nitride film contains three kinds of elements such as Si, N, H, is typically expressed as SiN
x: the H film, it had both played antireflecting effect, also played the effect of surface passivation.
Antireflecting principle is that the optical superposition that utilizes former and later two surfaces of antireflection layer (ARC) to reflect also disappears mutually, thereby reaches the effect of diminished reflex light.The individual layer antireflection film through behind former and later two surface reflection light, exists once the stack of light to disappear mutually.And double-layer reflection-decreasing film, then except former and later two surface reflection light, therefore the light that can also reflect and superpose of the interface between film exist the stack of twice light to disappear mutually.Therefore, double-layer reflection-decreasing film has better anti-reflective effect than individual layer antireflection film, can be so that silicon chip surface has lower reflectivity.
In addition, for the individual layer antireflection film, when the antireflection layer of crystal-silicon solar cell satisfies best antireflective condition, following relational expression is arranged:
Wherein: n
0Refractive index for air (or glass); n
ARefractive index for antireflection layer; n
SiBe the refractive index of crystal-silicon solar cell, n
Si≈ 3.8.For airborne solar cell, n
0=1, calculate: n
A≈ 1.949.And in the reality, crystal-silicon solar cell normally is encapsulated under glass or other encapsulating materials (as EVA), at this moment n
0≈ 1.5, then the refractive index n of antireflection layer
A≈ 2.387.Hence one can see that, SiN
x: the refractive index of H film is about at 2.387 o'clock, can obtain best anti-reflective effect.Yet, SiN
x: can cause serious absorption loss water when the refractive index of H film is excessive, therefore, SiN
x: the refractive index of H film can not be excessive.The individual layer SiN of practical application
x: often between 2.0-2.1, thickness presents navy blue to the refractive index of H film between 75-80nm.Yet, SiN
x: the refractive index of H film and its surface passivation effect have confidential relation.The SiN of refractive index higher (for example between the 2.2-2.3)
x: the H film has better passivation effect.Therefore, behind the consideration optical loss, individual layer SiN
x: the H film be because of can not adopting bigger refractive index, and can not give play to its excellent passivation effect fully.
Generally speaking, the individual layer silicon nitride film can not have better anti-reflective effect than double-deck silicon nitride film, can not adopt bigger refractive index again and can not give play to its excellent passivation effect fully.
Summary of the invention:
The purpose of this invention is to provide a kind of double-deck silicon nitride film that is used for crystal-silicon solar cell and preparation method thereof, when it is used for crystal-silicon solar cell, has better anti-reflective effect and better surface passivation efficient than individual layer silicon nitride film, can improve the photoelectric conversion efficiency of solar cell, therefore, has good practical values.
In order to solve the existing problem of background technology, the present invention is by the following technical solutions: it is made up of two silicon nitride sublayer films with different refractivity, and obtains in a PECVD deposition process.
In described two sublayers, first sublayer (internal layer) that contacts with silicon chip has higher refractive index than the second sublayer film (skin) and (that is to say n
1＞n
2).
Described primary depositing process divides two stages to carry out, and adopts two different silane and ammonia flow ratio in two stages respectively.
Described primary depositing process divides two stages to carry out, and adopts two different growth temperatures respectively in two stages.
Described primary depositing process divides two stages to carry out, and adopts two different high frequency electric source power outputs in two stages respectively.
Described primary depositing process divides two stages to carry out, and adopts two different sedimentation times respectively in two stages.
Described primary depositing process divides two stages to carry out, and adopts two different operating air pressures respectively in two stages.
The present invention has following beneficial effect:
One, the individual layer silicon nitride film with routine is improved to double-deck silicon nitride film, because first sublayer (internal layer) that contacts with silicon chip has higher refractive index than the second sublayer film (skin), so strengthened the antireflective effect of film, improve the photoelectric conversion efficiency of solar cell, had good practical values.。
Two, the individual layer silicon nitride film with routine is improved to double-deck silicon nitride film, because the refractive index of internal layer can adopt higher refractive index, so can increase the passivation efficiency of silicon chip surface, improve the photoelectric conversion efficiency of solar cell, have good practical values.
Embodiment:
This embodiment is by the following technical solutions: it is made up of two silicon nitride sublayer films with different refractivity, and obtains in a PECVD deposition process.
In described two sublayers, first sublayer (internal layer) that contacts with silicon chip has higher refractive index than the second sublayer film (skin) and (that is to say n
1＞n
2).
Described primary depositing process divides two stages to carry out, and adopts two different silane and ammonia flow ratio in two stages respectively.
Described primary depositing process divides two stages to carry out, and adopts two different growth temperatures respectively in two stages.
Described primary depositing process divides two stages to carry out, and adopts two different high frequency electric source power outputs in two stages respectively.
Described primary depositing process divides two stages to carry out, and adopts two different sedimentation times respectively in two stages.
Described primary depositing process divides two stages to carry out, and adopts two different operating air pressures respectively in two stages.
This embodiment has been improved conventional industrialization crystal-silicon solar cell and has been produced pecvd process, the individual layer silicon nitride film of routine is improved to double-deck silicon nitride film, because first sublayer (internal layer) that contacts with silicon chip has higher refractive index than the second sublayer film (skin), so strengthened the antireflective effect of film, simultaneously again because the refractive index of internal layer can adopt higher refractive index, so can increase the passivation efficiency of silicon chip surface, thereby improve the photoelectric conversion efficiency of solar cell, have good practical values.
Example one, with area be 125mm * 125mm, thickness be about 200 microns the p type single crystal silicon sheet through making herbs into wool, diffusion, etching, dephosphorization silex glass and cleaned after, put into the growth that PECVD equipment carries out double-deck silicon nitride film.In this time technical process, it is that 120s, power are that 3500W, temperature are that 450 ℃, air pressure are that the flow-rate ratio of 1700mTorr, silane and ammonia is 1: 6 that the parameter of phase I film growth is set to the time respectively; It is that the flow-rate ratio of 600s, silane and ammonia is 1: 8 that the parameter of second stage film growth is set to the time respectively, and other parameters are the same with the phase I.The double-deck silicon nitride film composite refractive index of growth gained is about about 2.11, and wherein the refractive index of internal layer is about 2.25, and outer field refractive index is about 2.03.
Example two, with area be 125mm * 125mm, thickness be about 200 microns the p type single crystal silicon sheet through making herbs into wool, diffusion, etching, dephosphorization silex glass and cleaned after, put into the growth that PECVD equipment carries out double-deck silicon nitride film.In this time technical process, it is that 120s, power are that 3500W, temperature are that 450 ℃, air pressure are that the flow-rate ratio of 1700mTorr, silane and ammonia is 1: 7 that the parameter of phase I film growth is set to the time respectively; It is that 600s, temperature are 430 ℃ that the parameter of second stage film growth is set to the time respectively, and other parameters are the same with the phase I.
Example three, with area be 125mm * 125mm, thickness be about 200 microns the p type single crystal silicon sheet through making herbs into wool, diffusion, etching, dephosphorization silex glass and cleaned after, put into the growth that PECVD equipment carries out double-deck silicon nitride film.In this time technical process, it is that 120s, power are that 3500W, temperature are that 450 ℃, air pressure are that the flow-rate ratio of 1700mTorr, silane and ammonia is 1: 7 that the parameter of phase I film growth is set to the time respectively; It is that 600s, power are 3200W that the parameter of second stage film growth is set to the time respectively, and other parameters are the same with the phase I.
Example four, with area be 125mm * 125mm, thickness be about 200 microns the p type single crystal silicon sheet through making herbs into wool, diffusion, etching, dephosphorization silex glass and cleaned after, put into the growth that PECVD equipment carries out double-deck silicon nitride film.In this time technical process, it is that 120s, power are that 3500W, temperature are that 450 ℃, air pressure are that the flow-rate ratio of 1700mTorr, silane and ammonia is 1: 7 that the parameter of phase I film growth is set to the time respectively; It is that 600s, air pressure are 1500mTorr that the parameter of second stage film growth is set to the time respectively, and other parameters are the same with the phase I.
Claims (7)
1. one kind is used for double-deck silicon nitride film of crystal-silicon solar cell and preparation method thereof, it is characterized in that it is made up of two silicon nitride sublayer films with different refractivity, and obtains in a PECVD deposition process.
2. a kind of double-deck silicon nitride film that is used for crystal-silicon solar cell according to claim 1 and preparation method thereof is characterized in that first sublayer that contacts with silicon chip has higher refractive index than the second sublayer film, that is to say n in described two sublayers
1＞n
2
3. a kind of double-deck silicon nitride film that is used for crystal-silicon solar cell according to claim 1 and preparation method thereof, it is characterized in that described primary depositing process divides two stages to carry out, and in two stages, adopt two different silane and ammonia flow ratio respectively.
4. a kind of double-deck silicon nitride film that is used for crystal-silicon solar cell according to claim 1 and preparation method thereof is characterized in that described primary depositing process divides two stages to carry out, and adopt two different growth temperatures respectively in two stage.
5. a kind of double-deck silicon nitride film that is used for crystal-silicon solar cell according to claim 1 and preparation method thereof, it is characterized in that described primary depositing process divides two stages to carry out, and in two stages, adopt two different high frequency electric source power outputs respectively.
6. a kind of double-deck silicon nitride film that is used for crystal-silicon solar cell according to claim 1 and preparation method thereof is characterized in that described primary depositing process divides two stages to carry out, and adopt two different sedimentation times respectively in two stage.
7. a kind of double-deck silicon nitride film that is used for crystal-silicon solar cell according to claim 1 and preparation method thereof is characterized in that described primary depositing process divides two stages to carry out, and adopt two different operating air pressures respectively in two stage.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386277A (en) * | 2011-10-17 | 2012-03-21 | 浙江贝盛光伏股份有限公司 | Multi-coating technology |
| CN102983214A (en) * | 2012-11-19 | 2013-03-20 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of selective emitter crystalline silicon solar cell |
| CN103165685A (en) * | 2011-12-13 | 2013-06-19 | 三星Sdi株式会社 | Photovoltaic device and method of manufacturing the same |
| CN103840032A (en) * | 2012-11-27 | 2014-06-04 | 陕西天宏硅材料有限责任公司 | Preparation technology of silicon solar monocrystalline cell double-layer anti-reflection coating |
| CN104979427A (en) * | 2015-05-15 | 2015-10-14 | 欧贝黎新能源科技股份有限公司 | Preparation method of double-layer silicon nitride film used for crystalline silicon solar cell |
| CN106952969A (en) * | 2017-03-08 | 2017-07-14 | 中山大学 | A kind of group III-nitride photodetector passivating film and preparation method thereof |
| CN110120343A (en) * | 2018-02-06 | 2019-08-13 | 中芯国际集成电路制造（天津）有限公司 | The manufacturing method of silicon nitride film and semiconductor devices |
-
2011
- 2011-01-26 CN CN2011100276709A patent/CN102130185A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386277A (en) * | 2011-10-17 | 2012-03-21 | 浙江贝盛光伏股份有限公司 | Multi-coating technology |
| CN103165685A (en) * | 2011-12-13 | 2013-06-19 | 三星Sdi株式会社 | Photovoltaic device and method of manufacturing the same |
| CN102983214A (en) * | 2012-11-19 | 2013-03-20 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of selective emitter crystalline silicon solar cell |
| CN102983214B (en) * | 2012-11-19 | 2015-05-20 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of selective emitter crystalline silicon solar cell |
| CN103840032A (en) * | 2012-11-27 | 2014-06-04 | 陕西天宏硅材料有限责任公司 | Preparation technology of silicon solar monocrystalline cell double-layer anti-reflection coating |
| CN104979427A (en) * | 2015-05-15 | 2015-10-14 | 欧贝黎新能源科技股份有限公司 | Preparation method of double-layer silicon nitride film used for crystalline silicon solar cell |
| CN106952969A (en) * | 2017-03-08 | 2017-07-14 | 中山大学 | A kind of group III-nitride photodetector passivating film and preparation method thereof |
| CN110120343A (en) * | 2018-02-06 | 2019-08-13 | 中芯国际集成电路制造（天津）有限公司 | The manufacturing method of silicon nitride film and semiconductor devices |
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Application publication date: 20110720 |