CN102130067B - 一种表面镀钯键合铜丝 - Google Patents
一种表面镀钯键合铜丝 Download PDFInfo
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 63
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 48
- 239000010949 copper Substances 0.000 claims abstract description 26
- 229910052802 copper Inorganic materials 0.000 claims abstract description 25
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 24
- 238000007747 plating Methods 0.000 claims abstract description 15
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 13
- 238000001771 vacuum deposition Methods 0.000 claims description 10
- 239000000470 constituent Substances 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 239000011575 calcium Substances 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910001369 Brass Inorganic materials 0.000 claims description 2
- 239000010951 brass Substances 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 238000000137 annealing Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 5
- 238000012545 processing Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000011162 core material Substances 0.000 abstract 6
- 238000003723 Smelting Methods 0.000 abstract 1
- 229910021654 trace metal Inorganic materials 0.000 abstract 1
- 238000003466 welding Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001387 multinomial test Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
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Abstract
本发明公开了一种表面镀钯键合铜丝,包括铜为主组分的铜芯材,以及在所述铜芯材上镀覆形成的钯层,其特征在于:由铜为主组分的铜芯材添加改善延伸性能的微量金属,经过单晶熔炼拉伸成铜合金芯线并在表面镀钯后再超细拉伸为表面镀钯键合铜丝。本发明与现有技术对比的有益效果是:本发明的表面镀钯键合铜丝在后续的超细拉伸过程中不必进行中间退火就具有较好的最终塑性变形能力,其延伸率至少为11%,镀钯层在压力加工过程中变形一致,表面均匀,致密完整,尤其是有利于焊接键合时充分变形,提高拉断力及可靠性,而且,产品成本可以控制在6元/百米左右,性价比高。
Description
技术领域
本发明涉及键合丝,特别是涉及一种表面镀钯键合铜丝。
背景技术
中国专利CN100359657C公告了一种《键合线和使用该键合线的集成电路装置》,这种键合线包含铜作为主要材料的芯材,在所述芯材上形成的包含除铜之外金属的异种金属层和一覆层,所述覆层包含具有熔点高于铜的熔点的抗氧化金属并且在所述异种金属层上形成。所述键合线可以形成在球直径的宽范围上具有真正圆形的球,并且可以使用镀敷技术制造而不会使镀液劣化,且所述覆层到所述芯材的粘合性良好。但是,在后续的压力加工过程中不能保证镀层的完整性,在拉伸时直径达到0.05mm时,镀层被破坏,而且,在铜芯材和钯层之间不做预镀金层时,电镀液很快会因铜在电镀液中溶解而变质,进而影响电镀质量。
发明内容
本发明所要解决的技术问题是弥补上述现有技术的缺陷,提供一种表面镀钯键合铜丝。
本发明的技术问题通过以下技术方案予以解决。
这种表面镀钯键合铜丝,包括铜为主组分的銅芯材,以及在所述銅芯材上镀覆形成的钯层。
这种表面镀钯键合铜丝的特点是:
由铜为主组分的铜芯材添加改善延伸性能的微量金属,经过单晶熔炼拉伸成铜合金芯线并在表面镀钯后再超细拉伸为表面镀钯键合铜丝。
本发明的技术问题通过以下进一步的技术方案予以解决。
所述主组分的銅芯材是纯度至少为99.9980%的高纯銅合金材料。
所述改善延伸性能的微量金属及其与主组分的銅芯材的重量百万分比(parts per million,缩略词为ppm)分别如下:
钙:3~5ppm;
镁:1~3ppm;
铝:2~4ppm;
锡:1~3ppm。所述单晶熔炼拉伸成的铜合金芯线具有纯单晶体结构,添加改善延伸性能的微量金属,可以明显提高单晶铜合金芯线的延伸性能。在后续的超细拉伸过程中不必进行中问退火就具有较好的最终塑性变形能力,在经过带惰性气体保护的动态在线退火后延伸率可达12%以上,其中直径为Ф23μm以下的超细键合铜丝的延伸率至少为11%,有利于焊接键合时充分变形,提高线弧刚性和高度,提高拉断力及可靠性。
所述镀覆形成的钯层,是在真空镀膜设备中进行动态连续磁控溅射真空镀膜形成的钯层。
所述真空镀膜设备的真空度为10-1~10Pa。
所述真空镀膜设备的阴极靶材为金和钯中的一种。可以使溅镀率达到0.1~1.0μm/min,其镀覆钯层附着力远大于化学触击电镀的镀层,在后续拉伸变形时变形一致,表面均匀,致密完整。
本发明的技术问题通过以下再进一步的技术方案予以解决。
优选的是,所述主组分的銅芯材原料是6N銅(Six Nines Coppe=99.9999%),即纯度为99.9999%的高纯銅。
所述单晶熔炼后拉伸的铜合金芯线的直径为Ф0.05~0.25mm,属于超细芯材。
所述镀覆形成的钯层厚度为0.1~3.0μm。
所述超细拉伸为表面镀钯键合铜丝的最终成品直径为Ф18~50μm。
本发明与现有技术对比的有益效果是:
本发明的表面镀钯键合铜丝在后续的超细拉伸过程中不必进行中间退火就具有较好的最终塑性变形能力,其延伸率至少为11%,镀钯层在压力加工过程中变形一致,表面均匀,致密完整,尤其是有利于焊接键合时充分变形,提高拉断力及可靠性,而且,产品成本可以控制在6元/百米左右,性价比高。
具体实施方式
下面结合具体实施方式对本发明进行说明。
一种表面镀钯键合铜丝,包括铜为主组分的銅芯材,以及在銅芯材上镀覆形成的钯层。由铜为主组分的铜芯材添加改善延伸性能的微量金属,经过单晶熔炼拉伸成的铜芯线并在表面镀钯后再超细拉伸为表面镀钯键合铜丝。
主组分的銅芯材是纯度为99.9988%的高纯銅合金材料,选取6N高纯铜原料,添加5ppm的钙、2.3ppm的镁、3ppm的铝和2.8ppm的锡进行单晶熔炼,经化学分析其组分的重量百万分比分别如下:
铜 99998.00×10-6;
铁 0.05×10-6;
硅 0.08×10-6:
硫 0.01×10-6;
银 0.10×10-6;
砷 0.01×10-6;
铍 0.03×10-6;
其它 0.12×10-6。
改善延伸性能的微量金属及其与主组分的銅芯材的重量百万分比分别如下:
钙 4.20×10-6;
镁 2.00×10-6;
铝 2.80×10-6;
锡 2.60×10-6。
单晶熔炼拉伸而成的直径为Ф0.10mm的单晶铜合金芯线卷绕在不锈钢卷轴上,传送至真空镀膜设备中进行动态连续磁控真空溅射,在单晶铜丝表面镀覆形成厚度为0.36μm的钯层。
真空镀膜设备的真空度为10-1~10Pa,阴极靶材为5N的高纯钯块,尺寸为600mm×150mm×5mm(长×宽×高)。
将表面镀钯的铜合金芯线进行超细拉伸,获得最终直径为Ф20μm的表面镀钯键合铜丝成品。
镀层表面检查采用80~100倍的金相显微镜,结果如下:
表面的钯镀层均匀光亮,致密完整,无裂痕、起皮、脱落。
将表面镀钯键合铜丝进行动态连续退火,退火温度为468±0.5℃,四温区控制,温区总长度1200mm,退火速度1m/sec。
退火后力学性能测试采用拉力测试仪,结果如下:
拉断力:7.62g(标准值为5g);
延伸率:13.46%(标准值为10~14%);
抗拉强度:240MPa(标准值为至少210MPa);
烧球后的球硬度(Hv0.002):48;
线硬度(Hv0.01):98;
电阻率:1.72μΩ×cm;
熔断电流:0.98A(弧长3mm);
成球特性:球形完美(5N氮气烧球保护下,球径40μm)。
焊线试验采用型号为ASM EAGLE60的焊线机,焊线产品代号为SOP16,结果如下:
第一焊点完全正常,无明显金属铝层挤出,无弹坑出现;
第二焊点鱼尾形状完全打开,貌似金线,拉力正常;
焊线拉力和球推力测试,结果如下:
焊线拉力:8~9g(标准值为至少5g);
球推力:31~36g(标准值为至少20g);
推球试验后,芯片表面有足够的残留。
以上多项测试结果表明:本具体实施方式的表面镀钯键合铜丝能够满足现代封装的高端键合要求。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明,不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说,在不脱离本发明构思的前提下做出若干等同替代或明显变型,而且性能或用途相同,都应当视为属于本发明由所提交的权利要求书确定的专利保护范围。
Claims (7)
1.一种表面镀钯键合铜丝,包括铜为主组分的铜芯材,以及在所述铜芯材上镀覆形成的钯层,由铜为主组分的铜芯材添加改善延伸性能的微量金属,经过单晶熔炼拉伸成铜合金芯线并在表面镀钯后再超细拉伸为键合铜丝;所述主组分的铜芯材原料是纯度为99.9999%的高纯铜,其特征在于:
所述改善延伸性能的微量金属及其与主组分的铜芯材的重量百万分比(parts per million,缩略词为ppm)分别如下:
钙:3~5ppm;
镁:1~3ppm;
铝:2~4ppm;
锡:1~3ppm。
2.如权利要求1所述的表面镀钯键合铜丝,其特征在于:
所述镀覆形成的钯层,是在真空镀膜设备中进行动态连续磁控溅射真空镀膜形成的钯层。
3.如权利要求2所述的表面镀钯键合铜丝,其特征在于:
所述真空镀膜设备的真空度为10-1~10Pa。
4.如权利要求3所述的表面镀钯键合铜丝,其特征在于:
所述真空镀膜设备的阴极靶材为金和钯中的一种。
5.如权利要求4所述的表面镀钯键合铜丝,其特征在于:
所述单晶熔炼后拉伸的铜合金芯线的直径为Φ0.05~0.25mm。
6.如权利要求5所述的表面镀钯键合铜丝,其特征在于:
所述镀覆形成的钯层厚度为0.1~3.0μm。
7.如权利要求6所述的表面镀钯键合铜丝,其特征在于:
所述超细拉伸为表面镀钯键合铜丝的最终成品直径为Φ18~50μm。
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MY162048A (en) | 2015-06-15 | 2017-05-31 | Nippon Micrometal Corp | Bonding wire for semiconductor device |
EP3136435B1 (en) | 2015-07-23 | 2022-08-31 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
SG10201600329SA (en) * | 2016-01-15 | 2017-08-30 | Heraeus Materials Singapore Pte Ltd | Coated wire |
CN106086962A (zh) * | 2016-06-06 | 2016-11-09 | 上海铭沣半导体科技有限公司 | 一种封装用镀金钯键合铜线的生产工艺 |
CN109457143A (zh) * | 2018-10-30 | 2019-03-12 | 深圳粤通应用材料有限公司 | 一种纯镍镀钯高温导电丝及其制备方法 |
CN110042357B (zh) * | 2019-05-22 | 2021-05-14 | 河南理工大学 | 无线充电用合金线制备方法及制备用的多靶磁控溅射装置 |
CN111180406A (zh) * | 2020-01-04 | 2020-05-19 | 深圳金斯达应用材料有限公司 | 一种合金钯涂镀键合材料 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1949493A (zh) * | 2006-11-03 | 2007-04-18 | 宁波康强电子股份有限公司 | 键合铜丝及其制备方法 |
CN1949492A (zh) * | 2006-11-03 | 2007-04-18 | 宁波康强电子股份有限公司 | 一种键合铜丝及其制备方法 |
CN101707194A (zh) * | 2009-11-11 | 2010-05-12 | 宁波康强电子股份有限公司 | 一种镀钯键合铜丝及其制造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6365034A (ja) * | 1986-09-05 | 1988-03-23 | Furukawa Electric Co Ltd:The | 銅細線とその製造方法 |
US20080061140A1 (en) * | 2006-09-08 | 2008-03-13 | Consolidated Graphics, Inc. | Tamper resistant packaging with security tag |
-
2010
- 2010-12-31 CN CN2010106207163A patent/CN102130067B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1949493A (zh) * | 2006-11-03 | 2007-04-18 | 宁波康强电子股份有限公司 | 键合铜丝及其制备方法 |
CN1949492A (zh) * | 2006-11-03 | 2007-04-18 | 宁波康强电子股份有限公司 | 一种键合铜丝及其制备方法 |
CN101707194A (zh) * | 2009-11-11 | 2010-05-12 | 宁波康强电子股份有限公司 | 一种镀钯键合铜丝及其制造方法 |
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