CN102061443B - Method for plating tin oxide film through magnetic sputtering - Google Patents
Method for plating tin oxide film through magnetic sputtering Download PDFInfo
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- CN102061443B CN102061443B CN 201110033178 CN201110033178A CN102061443B CN 102061443 B CN102061443 B CN 102061443B CN 201110033178 CN201110033178 CN 201110033178 CN 201110033178 A CN201110033178 A CN 201110033178A CN 102061443 B CN102061443 B CN 102061443B
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Abstract
The invention relates to a method for plating a tin oxide film through magnetic sputtering. The method is characterized by comprising the following steps: working gases Ar and O2 are introduced in a vacuum chamber; a cathode tin target and an anode substrate which are arranged in the vacuum chamber, are ionized to obtain Ar<+> ions; the ions are accelerated by an electric field to have high energy and then are utilized to bombard the surface of the cathode tin target to transfer ion momentum to the atoms of the tin target; after the atoms of the tin target obtain the momentum, the atoms of the tin target escapes from the surface of the target; and under the action of the electric field, the atoms react with O2 to form tin oxide, and the tin oxide is attached to the anode substrate to form the film. By adopting the method provided by the invention, the coating film layer is a monolayer tin oxide film, the technology is simple, and the cost is low; the resistance of the film layer is more than 109 Omega, and the film layer is not conductive and can not influence radio frequency communication; and the film layer has the advantages of good adhesive force and excellent physical properties and weather resistance.
Description
Technical field
The present invention relates to a kind of method that adopts the magnetron sputtering tin oxide film.
Background technology
Tin oxide film that prior art plates is mainly for the preparation of conductive film, ITO film, and rete has characteristic, Fig. case processibility, the Electricityization Learn stabilitys such as low surperficial Electricity resistance, high transmission rate, low specific resistance value.The ITO film is mainly used in the Electricity, Guang Learn such as touch element, the transparent Hot of adding element, Kang Static Electricity film, Electricity Ci Bo Fang Nursing film, the transparent Electricity utmost point, Fang anti-Guang Tu Fabric and Hot anti-She Mirror that too Yang can the Electricity pond and Guang Electricity Installed is set up.But its plated film color of existing coating process is too single, and color is to form by toner or the simple toning of pigment, after the time is permanent, and fugitive color, and can not reach the non-conductive of film surface, can affect the radio-frequency communication of electronic product.Although some coating process has overcome light reflection difference, the problem of fugitive color, but its technique is very complicated, for example application number is: 99246379.3 patent, it uses the vacuum magnetic-control sputtering method to produce the purple coated glass, its purple is very bright-coloured, and color can arbitrarily be regulated, and visible reflectance and transmissivity can arbitrarily be regulated.But its film layer structure is that 4 tunics are compound, and technique is comparatively complicated, and each thicknesses of layers changes the quality that all can affect product.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of method that adopts the magnetron sputtering tin oxide film, can realize that institute's coatings is mono-layer oxidized tin film, its reflected light color is multiple monochromatic ray, and strong adhesion, non-conductive.
The method of employing magnetron sputtering tin oxide film of the present invention is characterized in that: in vacuum chamber, pass into working gas Ar and O
2, the negative electrode tin target and the anode substrate that arrange in the vacuum chamber ionize out Ar
+After ion, this ion were subject to electric field acceleration and have high-energy, bombarding cathode tin target material surface was transferred to the tin target atom with Ion Momentum, and the tin target atom obtains the target material surface of overflowing behind the momentum, under electric field action, with O
2Reaction forms stannic oxide and is attached to film forming on the anode substrate.
The present invention has the following advantages:
(1) make product produce a certain particular color by specific refractory power and the thickness that changes SnO 2 thin film; Product colour is that rete refraction or reflection different wave length produce, fugitive color not, and outward appearance seems to have gorgeous metal reflective color and luster, and is graceful especially attractive in appearance; Can be by regulating thicknesses of layers and specific refractory power, make silvery white, the product such as pink, green, blue and golden yellow;
(2) industry NCVM is mainly used in electronic product casing and is coated with layer of metal or metal oxide, to reach reflective color as multiple monochromatic purpose.The present invention is mainly used in the electronic product display screen curtain, to reach reflective color as multiple monochromatic purpose;
(3) institute's coatings is mono-layer oxidized tin film, and technique is simple, cost;
(4) rete resistance 10
9More than the Ω, for non-conductive layer, do not affect radio-frequency communication; Film adhesion is good, has good physicals and weathering resistance.
Embodiment
The invention provides a kind of method that adopts the magnetron sputtering tin oxide film, it is characterized in that: in vacuum chamber, pass into working gas Ar and O
2, the negative electrode tin target and the anode substrate that arrange in the vacuum chamber ionize out Ar
+After ion, this ion were subject to electric field acceleration and have high-energy, bombarding cathode tin target material surface was transferred to the tin target atom with Ion Momentum, and the tin target atom obtains the target material surface of overflowing behind the momentum, under electric field action, with O
2Reaction forms stannic oxide and is attached to film forming on the anode substrate.
Here be noted that method of the present invention before enforcement, similar with the mode of industry product plated film, all substrate to be carried out pre-treatment, comprise pure clear water clean → ultrasound solvent cleaning → ultrasound pure water cleans → oven dry; Then be clamped on the tool → electric rifle dedusting → magnetron sputtering → printing-ink of the present invention → baking → cleaning → inspection → packing.Here we are just take the mobile phone display screen curtain as example, and we just do not carry out analysis introduction for detailed operation.
The plated film of mobile phone display screen curtain comprises:
(1) substrate pre-treatment, the purpose of this operation are for the dust of removing substrate surface, greasy, white point, fingerprint;
(2) be clamped on the tool;
(3) electric rifle dedusting, purpose are again to remove on-chip dust before sputter, increase the sticking power of rete;
(4) Sputter coating is at substrate plating stannic oxide rete;
(5) printing-ink, wire mark one deck band logo black ink around film surface plays simultaneously protective film and makes rete under the shining upon of printing ink background color, presents gorgeous metal color gloss;
(6) baking, in 160 ℃ of baking ovens, baking 0.5h, this technique is mainly for dry solidification printing ink;
(7) cleaning is removed unclean, foreign matter etc. with alcohol wipe;
(8) check, be confirmed whether that scratch, white point, irregular colour etc. are scraped in existence bad;
(9) packing.
It is worth mentioning that, adopt the reflective color of the tin oxide film of the present invention's realization to comprise: golden yellow, silvery white, pink, blue and green etc.Those reflective colors can realize by the thickness that changes tin oxide film.Here we are take golden yellow as example, the initial pressure of described sputter is the 7.50E-05 holder, pressure in the sputter procedure is: the 1.80E-03 holder, we are made as anode substrate static, negative electrode tin target are made as motion, in processing procedure, we are set as 18 mm/s with the travelling speed of negative electrode tin target, the electric power that is added on above the negative electrode tin target is 0.6KW, and the Ar gas speed that passes into is: 105ml/min, the O that passes into
2Gas speed is: 8ml/min, and through 4 times sputter process, described number refers to target from origin-to-destination, perhaps is one time from the terminal point to the starting point, comes and goes as twice, can make reflective color is golden yellow NCVM.
Table one is to have listed to generate other several colors, needed better condition, and as seen, the method that the present invention prepares different colours is to realize by the thickness that changes tin oxide film.
| Color | Speed (mm/s) | Power (kw) | Number | O 2（ml/min） | Ar（ml/min） | Initial pressure (holder) | Processing procedure pressure (holder) |
| Silvery white | 18 | 0.6 | 4 | 0 | 105 | 7.50E-05 | 1.80E-03 |
| Yellow | 18 | 0.6 | 5 | 8 | 105 | 7.50E-05 | 1.80E-03 |
| Blue | 18 | 0.6 | 9 | 8 | 105 | 7.50E-05 | 1.80E-03 |
| Green | 18 | 0.6 | 10 | 8 | 105 | 7.50E-05 | 1.80E-03 |
| Pink | 18 | 0.6 | 8 | 8 | 105 | 7.50E-05 | 1.80E-03 |
Table one
The above only is preferred embodiment of the present invention, and all equalizations of doing according to the present patent application claim change and modify, and all should belong to covering scope of the present invention.
Claims (5)
1. a method that adopts the magnetron sputtering tin oxide film is characterized in that: in vacuum chamber, pass into working gas Ar and O
2, the negative electrode tin target and the anode substrate that arrange in the vacuum chamber ionize out Ar
+After ion, this ion were subject to electric field acceleration and have high-energy, bombarding cathode tin target material surface was transferred to the tin target atom with Ion Momentum, and the tin target atom obtains the target material surface of overflowing behind the momentum, under electric field action, with O
2Reaction forms stannic oxide and is attached to film forming on the anode substrate; The reflective color of described tin oxide film is to realize by the thickness that changes tin oxide film; Described negative electrode tin target moves, and described anode substrate is static, and when the reflective color of preparation was flavous tin oxide film, the initial pressure of described sputter was the 7.50E-05 holder, and the pressure in the sputter procedure is: the 1.80E-03 holder; The travelling speed of described negative electrode tin target is 18 mm/s, and the electric power that is added on above the negative electrode tin target is 0.6kW, and the Ar gas speed that passes into is: 105mL/min, the O that passes into
2Gas speed is: 8mL/min, and through 4 times sputter process.
2. a method that adopts the magnetron sputtering tin oxide film is characterized in that: in vacuum chamber, pass into working gas Ar and O
2, the negative electrode tin target and the anode substrate that arrange in the vacuum chamber ionize out Ar
+After ion, this ion were subject to electric field acceleration and have high-energy, bombarding cathode tin target material surface was transferred to the tin target atom with Ion Momentum, and the tin target atom obtains the target material surface of overflowing behind the momentum, under electric field action, with O
2Reaction forms stannic oxide and is attached to film forming on the anode substrate; The reflective color of described tin oxide film is to realize by the thickness that changes tin oxide film; Described negative electrode tin target moves, and described anode substrate is static, and when the reflective color of preparation was the tin oxide film of yellow, the initial pressure of described sputter was the 7.50E-05 holder, and the pressure in the sputter procedure is: the 1.80E-03 holder; The travelling speed of described negative electrode tin target is 18 mm/s, and the electric power that is added on above the negative electrode tin target is 0.6kW, and the Ar gas speed that passes into is: 105mL/min, the O that passes into
2Gas speed is: 8mL/min, and through 5 times sputter process.
3. a method that adopts the magnetron sputtering tin oxide film is characterized in that: in vacuum chamber, pass into working gas Ar and O
2, the negative electrode tin target and the anode substrate that arrange in the vacuum chamber ionize out Ar
+After ion, this ion were subject to electric field acceleration and have high-energy, bombarding cathode tin target material surface was transferred to the tin target atom with Ion Momentum, and the tin target atom obtains the target material surface of overflowing behind the momentum, under electric field action, with O
2Reaction forms stannic oxide and is attached to film forming on the anode substrate; The reflective color of described tin oxide film is to realize by the thickness that changes tin oxide film; Described negative electrode tin target moves, and described anode substrate is static, and when the reflective color of preparation was the tin oxide film of blueness, the initial pressure of described sputter was the 7.50E-05 holder, and the pressure in the sputter procedure is: the 1.80E-03 holder; The travelling speed of described negative electrode tin target is 18 mm/s, and the electric power that is added on above the negative electrode tin target is 0.6kW, and the Ar gas speed that passes into is: 105mL/min, the O that passes into
2Gas speed is: 8mL/min, and through 9 times sputter process.
4. a method that adopts the magnetron sputtering tin oxide film is characterized in that: in vacuum chamber, pass into working gas Ar and O
2, the negative electrode tin target and the anode substrate that arrange in the vacuum chamber ionize out Ar
+After ion, this ion were subject to electric field acceleration and have high-energy, bombarding cathode tin target material surface was transferred to the tin target atom with Ion Momentum, and the tin target atom obtains the target material surface of overflowing behind the momentum, under electric field action, with O
2Reaction forms stannic oxide and is attached to film forming on the anode substrate; The reflective color of described tin oxide film is to realize by the thickness that changes tin oxide film; Described negative electrode tin target moves, and described anode substrate is static, and when the reflective color of preparation was the tin oxide film of green, the initial pressure of described sputter was the 7.50E-05 holder, and the pressure in the sputter procedure is: the 1.80E-03 holder; The travelling speed of described negative electrode tin target is 18 mm/s, and the electric power that is added on above the negative electrode tin target is 0.6kW, and the Ar gas speed that passes into is: 105mL/min, the O that passes into
2Gas speed is: 8mL/min, and through 10 times sputter process.
5. a method that adopts the magnetron sputtering tin oxide film is characterized in that: in vacuum chamber, pass into working gas Ar and O
2, the negative electrode tin target and the anode substrate that arrange in the vacuum chamber ionize out Ar
+After ion, this ion were subject to electric field acceleration and have high-energy, bombarding cathode tin target material surface was transferred to the tin target atom with Ion Momentum, and the tin target atom obtains the target material surface of overflowing behind the momentum, under electric field action, with O
2Reaction forms stannic oxide and is attached to film forming on the anode substrate; The reflective color of described tin oxide film is to realize by the thickness that changes tin oxide film; Described negative electrode tin target moves, and described anode substrate is static, and when the reflective color of preparation was peach tin oxide film, the initial pressure of described sputter was the 7.50E-05 holder, and the pressure in the sputter procedure is: the 1.80E-03 holder; The travelling speed of described negative electrode tin target is 18 mm/s, and the electric power that is added on above the negative electrode tin target is 0.6kW, and the Ar gas speed that passes into is: 105mL/min, the O that passes into
2Gas speed is: 8mL/min, and through 8 times sputter process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110033178 CN102061443B (en) | 2011-01-31 | 2011-01-31 | Method for plating tin oxide film through magnetic sputtering |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110033178 CN102061443B (en) | 2011-01-31 | 2011-01-31 | Method for plating tin oxide film through magnetic sputtering |
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| CN102061443A CN102061443A (en) | 2011-05-18 |
| CN102061443B true CN102061443B (en) | 2013-02-13 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102584033A (en) * | 2012-03-02 | 2012-07-18 | 江苏秀强玻璃工艺股份有限公司 | Non-conducting metal film coated glass and preparation method thereof |
| CN104760377B (en) * | 2015-04-01 | 2018-03-09 | 深圳达沃斯光电有限公司 | A kind of rupture pressure disc and preparation method thereof and a kind of drive recorder |
| CN106702321A (en) * | 2015-11-16 | 2017-05-24 | 中国科学院福建物质结构研究所 | Method used for preparing high-conductivity high-transparency intrinsic stannic oxide film via magnetron sputtering |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4920006A (en) * | 1987-03-26 | 1990-04-24 | Ppg Industries, Inc. | Colored metal alloy/oxynitride coatings |
| CN2188587Y (en) * | 1994-03-22 | 1995-02-01 | 东南大学 | Colour coated glass with three kinds of membrane layers |
| CN1257135A (en) * | 1999-12-23 | 2000-06-21 | 复旦大学 | Metal indium-stannic oxide compound transparent electricity conductive film and preparation process thereof |
| CN1683586A (en) * | 2004-04-14 | 2005-10-19 | 北京大学 | Process for preparing tin oxide nan osensitive film |
-
2011
- 2011-01-31 CN CN 201110033178 patent/CN102061443B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4920006A (en) * | 1987-03-26 | 1990-04-24 | Ppg Industries, Inc. | Colored metal alloy/oxynitride coatings |
| CN2188587Y (en) * | 1994-03-22 | 1995-02-01 | 东南大学 | Colour coated glass with three kinds of membrane layers |
| CN1257135A (en) * | 1999-12-23 | 2000-06-21 | 复旦大学 | Metal indium-stannic oxide compound transparent electricity conductive film and preparation process thereof |
| CN1683586A (en) * | 2004-04-14 | 2005-10-19 | 北京大学 | Process for preparing tin oxide nan osensitive film |
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