CN102023486A - Method for measuring key size swing curve of photo-etching technique - Google Patents
Method for measuring key size swing curve of photo-etching technique Download PDFInfo
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- CN102023486A CN102023486A CN2009101954016A CN200910195401A CN102023486A CN 102023486 A CN102023486 A CN 102023486A CN 2009101954016 A CN2009101954016 A CN 2009101954016A CN 200910195401 A CN200910195401 A CN 200910195401A CN 102023486 A CN102023486 A CN 102023486A
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Abstract
The invention discloses a method for measuring key size swing curve of photo-etching technique. The method comprises the steps of measuring the key sizes corresponding to different thicknesses of a photo-resist film and acquiring the key size swing curve according to the measured key size. By using the method, the key size swing curve of photo-etching technique can be acquired by measuring with a wafer, therefore reducing the usage of photo-resist agent and wafer, shortening the processes and measuring time, and saving the cost.
Description
Technical field
The present invention relates to field of semiconductor manufacture, be specifically related to the method for critical size rocking curve in a kind of measuring light carving technology.
Background technology
Photoetching process is the technology of the specific part of crystal column surface film being removed by a series of production stages.After this, crystal column surface can stay the film that has the micrographics structure.
In the manufacture process of wafer, the various physical units of transistor, diode, electric capacity, resistance and metal level etc. constitute in crystal column surface or top layer.These parts are to generate on a mask layer at every turn, and remove specific part in conjunction with film former and by photo-etching technological process, finally the part of keeping characteristics figure on wafer.The target of photoetching process is the requirement according to circuit design, generate in the tram of crystal column surface size accurately and with the correct related feature pattern of other parts.
Photoetching is the processing step that all semiconductors are made most critical in the basic technology.Photoetching has determined the minimum dimension that all processing steps can form in the device fabrication, i.e. critical size, for example grid width in metal-oxide semiconductor (MOS) (MOS) device.
General photoetching process to experience at crystal column surface be coated with primer, spin coating photoresist, soft baking, aligning, exposure, back baking, develop, operations such as hard baking, etching, detection.
Wherein during the spin coating photoresist, at first will be at the center of wafer spraying photoresist, then with certain rotating speed rotation wafer, thereby set up thin, evenly and do not have a photoresist film of defective at crystal column surface.Exposure be by exposure lamp or other radiation source with figure transfer to photoresist film.The thickness difference of photoresist, the reflectivity of photoresist is also just different during exposure, thereby has influence on photoetching resolution, finally influences the critical size that semiconductor device fabrication process can realize.Relation curve between critical size and the photoresist thickness is called the critical size rocking curve.The critical size rocking curve figure that Fig. 1 obtains for the various optical parametric emulation that utilize photoresist supplier to provide.With reference to Fig. 1, enough little in order to make photoresist thickness to the influence of critical size, common minimal point or the maximal point (as justifying the point that A is drawn among Fig. 1) of in technological process, selecting curve shown in Figure 1.When selecting at this, even the thickness of photoresist has slight change in the photoetching process, the change of critical size is also not too large, thereby improves the homogeneity of device electrology characteristic.
Because the environment the when environment of semiconductor manufacturing factory merchant measuring light mathematic(al) parameter is measured various optical parametric with supplier might be different, therefore in the photoetching process of reality, the critical size rocking curve can depart from simulation curve shown in Figure 1 sometimes.Therefore, need often the critical size rocking curve of actual process institute reference to be made correction, to increase the degree of accuracy of technology.
In the prior art, adopt 5 photoresists usually, measure the pairing critical size of different-thickness photoresist to 10 wafer spin coating different-thickness, whether consistent with the simulation result of checking critical size rocking curve with current actual process results.When the spin coating photoresist, usually the photoresist after the spin coating primer is drawn onto on the sucker, photoresist is sprayed onto the center of wafer, at first rotate wafer 0.5-3 second then with predefined high rotating speed (for example per minute 2000-4000 changes), and then (for example with a less rotating speed, per minute 800-2500 changes) rotating suction disc 10-30 second, thus form the uniform photoresist film of thickness, as shown in Figure 2.By changing rotating speed, can obtain the photoresist film of different-thickness.Measure the pairing critical size of these different-thickness then, for example use sweep electron microscope to measure (CD SEM, Scanning Electron Microscope), and, obtain the critical size rocking curve, as shown in Figure 3 according to the measurement result curve plotting.
But the method for this measurement critical size rocking curve needs a plurality of wafers and form the photoresist of different-thickness on each wafer, has both wasted photoresist, has increased the time of technology and measurement again, thereby has made cost increase greatly.
Summary of the invention
The invention provides the method for critical size rocking curve in a kind of measuring light carving technology, reduce the use of photoresist and wafer, shorten technology and Measuring Time, reduce cost.This method comprises: the photoresist film that forms gradient thickness on wafer; Measure the pairing critical size of different-thickness of photoresist film; Critical size according to measuring obtains the critical size rocking curve.
Preferably, described photoresist film in formation gradient thickness on the wafer is: by the rotating speed of adjusting wafer and rotational time forms gradient thickness on wafer photoresist film.
Preferably, comprise by the rotating speed of adjusting wafer and rotational time forms gradient thickness on wafer photoresist film: at the center of wafer spraying photoresist; Rotate described wafer with predefined high rotating speed; The rotating speed of described wafer is reduced to the predefined slow-speed of revolution; The rotating speed that increases with stepping rotates described wafer; Be reduced to the described predefined slow-speed of revolution with rotating speed, be reduced to zero then described wafer.
Wherein, described predefined high rotating speed can change for per minute 1000 to 3000.The time of rotating described wafer with predefined high rotating speed is preferably 0.5 to 5 second.The described predefined slow-speed of revolution is that per minute 100 to 500 changes.The step-length that stepping increases rotating speed is 30 to 300 commentaries on classics.The time of rotating described wafer with each rotating speed in the rotating speed of stepping increase is 1 to 10 second.The rotating speed that stepping increases is increased to per minute 1000 to 2000 to be changeed.
The maximum ga(u)ge of the photoresist film of the gradient thickness that obtains with said method and parameter and the difference of minimum thickness are between 1 to 200 nanometer.
At the photoresist film that forms gradient thickness on the wafer can also be: the photoresist film that forms gradient thickness by the position that is adjusted at spraying photoresist on the wafer.
Preferably, the described photoresist film that forms gradient thickness by the position that is adjusted on the wafer spraying photoresist comprises: departing from the position spraying photoresist of crystal circle center; Rotate described wafer with predefined high rotating speed; The rotating speed of described wafer is reduced to predefined medium speed, is reduced to zero then.
Wherein, described position of departing from crystal circle center is apart from the position of 1 to 7 millimeter of crystal circle center, is preferably 5 millimeters.
Compared with prior art, technical scheme provided by the present invention is measured the pairing critical size of different-thickness of photoresist film then at first by the photoresist film of spin coating gradient thickness on wafer, draws the critical size rocking curve.Thereby only use a wafer to measure the critical size rocking curve of photoetching process, reduced the use of photoresist and wafer, shortened technology and Measuring Time, provide cost savings.
Description of drawings
The critical size rocking curve figure that Fig. 1 obtains for the various optical parametric emulation that utilize photoresist supplier to provide;
Fig. 2 is the rotating speed-time chart of spin coating photoresist in the prior art;
The critical size rocking curve figure of Fig. 3 for utilizing a plurality of wafers to obtain in the prior art;
Fig. 4 is the rotating speed-time chart of spin coating photoresist in the first embodiment of the invention;
The photoresist progressive thickness curve map of Fig. 5 on wafer, forming in the first embodiment of the invention;
Fig. 6 is the critical size rocking curve figure that utilizes the method for first embodiment of the invention to measure;
Fig. 7 is the synoptic diagram of spraying photoresist in the second embodiment of the invention;
The photoresist progressive thickness curve map of Fig. 8 on wafer, forming in the second embodiment of the invention;
Fig. 9 is the critical size rocking curve figure that utilizes the method for second embodiment of the invention to measure.
Embodiment
The present invention is described in detail below in conjunction with drawings and the specific embodiments.
The method of critical size rocking curve in the measuring light carving technology provided by the invention, at first on wafer, form the photoresist film of gradient thickness, measure the pairing critical size of different-thickness of photoresist film then, and, obtain the critical size rocking curve according to the critical size of measuring.
First embodiment:
In the present embodiment, be by the rotating speed of adjusting wafer and rotational time forms gradient thickness on wafer photoresist film at the photoresist film that forms gradient thickness on the wafer.
Specifically comprise: at first at the center of wafer spraying photoresist; Then with predefined high rotating speed rotation wafer; Rotating speed with wafer is reduced to the predefined slow-speed of revolution then, and rotates wafer with the rotating speed that stepping increases; Rotating speed with wafer is reduced to the predefined slow-speed of revolution up to zero at last, thereby forms the photoresist film of gradient thickness.
Below describe in detail and pass through to adjust the rotating speed of wafer and the preferred embodiment that rotational time forms the photoresist film of gradient thickness.
At first wafer is fixed with vacuum cup.Sucker is a hollow metal dish flat, that link to each other with vacuum pipeline.Chuck surface has many apertures, and in the time of above wafer is placed on sucker, the suction of vacuum makes wafer closely contact with sucker.Then, spray predefined photoresist amount at the center of wafer.The torque that applies on the sucker makes the rotating speed of wafer rise to predefined high rotating speed rapidly, with this rotating speed rotation wafer a period of time, for example as shown in Figure 4, be to rotate 2 seconds with the rotating speed that per minute 2500 changes in the present embodiment rotating speed rotation wafer 0.5-5 second of changeing with per minute 1000-3000.Thereby the photoresist of spraying is spin-coated on crystal column surface, but this moment, photoresist thickness did not reach desired level.
Then, the rotating speed of wafer is reduced to the predefined slow-speed of revolution, rotating speed rotation wafer 1-10 second of changeing for example with per minute 100-500, in the present embodiment with 100 rev/mins rotating speed rotation 1 second.Next, stepping increases the rotating speed of wafer, and for example the step-length of stepping increase rotating speed is that 30-300 changes, and promptly increase 30-300 changes at every turn, and the time of rotating wafer with each rotating speed can be 1-10 second.Increase rotating speed with 200 step-lengths of changeing in the present embodiment, the time of each rotating speed rotation wafer is 2 seconds.
The increase of rotating speed reaches per minute 1000-2000 changes (in the present embodiment being 1600 rev/mins) afterwards, and the rotating speed of wafer is reduced to the predefined slow-speed of revolution, is reduced to zero then, thereby forms the photoresist film of gradient thickness.
The photoresist progressive thickness curve map of Fig. 5 on wafer, forming in the first embodiment of the invention.As can be seen from Figure 5, the thickness of the photoresist film that forms with parameter in the above described manner reduces from the centre to the edge gradually.Depending on stepping increases the wafer rotational speed and the time in rotating speed stage, and the maximum ga(u)ge of the photoresist film of the gradient thickness that forms in this preferred embodiment and the difference of minimum thickness are between 1 to 200 nanometer.Certainly, form the photoresist film of other thickness difference if desired, perhaps form the bigger photoresist film of variation in thickness scope, then can change above parameter.In addition, wafer rotating speed and time when forming photoresist film, also can form the photoresist film of other pattern by further adjustment.The present invention is not limited to form the thick middle edge shown in Figure 5 photoresist film of attenuation gradually.
Fig. 6 is the critical size rocking curve figure that utilizes the method for first embodiment of the invention to measure.As shown in Figure 6, the critical size rocking curve figure that uses the method for first embodiment of the invention to measure is identical with the critical size rocking curve figure that utilizes a plurality of wafers to obtain shown in Fig. 3.
Second embodiment:
In the present embodiment, be the photoresist film that forms gradient thickness by the position that is adjusted at spraying photoresist on the wafer at the photoresist film that forms gradient thickness on the wafer.
Specifically comprise: departing from the position spraying photoresist of crystal circle center; With predefined high rotating speed rotation wafer; The rotating speed of wafer is reduced to predefined medium speed, is reduced to zero then, thereby form the photoresist film of gradient thickness.
Below describe the preferred embodiment that forms the photoresist film of gradient thickness by the position that is adjusted at spraying photoresist on the wafer in detail.
Fig. 7 is the synoptic diagram of spraying photoresist in the second embodiment of the invention.As shown in Figure 7, departing from the position spraying photoresist of crystal circle center, for example apart from the position of crystal circle center 1 to 7mm.In the present embodiment, the position of spraying photoresist and the distance of crystal circle center are 5mm.
Rotation mode with prior art rotates wafer then, for example at first rotate wafer 0.5-3 second with predefined high rotating speed (for example per minute 2000-4000 changes), and then (for example with predefined medium speed, per minute 800-2500 changes) rotate wafer 10-30 second, at last speed drop is low to moderate zero, thereby forms the photoresist film of gradient thickness.
Before the spraying photoresist, can also at first carry out virtual exposure, so that wafer is carried out orientation.
The photoresist progressive thickness curve map of Fig. 8 on wafer, forming in the second embodiment of the invention.As shown in Figure 8, the photoresist film that forms in the present embodiment the spraying photoresist center thickness maximum, and from the spraying photoresist center thickness reduce gradually.
Fig. 9 is the critical size rocking curve figure that utilizes the method for second embodiment of the invention to measure.As shown in Figure 9, the critical size rocking curve figure that uses the method for second embodiment of the invention to measure is identical with the critical size rocking curve figure that utilizes a plurality of wafers to obtain shown in Fig. 3.
By the above as can be seen, technical scheme provided by the present invention, the photoresist film of spin coating gradient thickness on wafer is at first measured the pairing critical size of different-thickness of photoresist film then, draws the critical size rocking curve according to the critical size of measuring.Thereby only use a wafer to measure the critical size rocking curve of photoetching process, reduced the use of photoresist and wafer, shortened technology and Measuring Time, provide cost savings.
The above is preferred embodiment of the present invention only, is not to be used to limit protection scope of the present invention.Within the spirit and principles in the present invention all, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (14)
1. the method for the critical size rocking curve of a measuring light carving technology comprises:
On wafer, form the photoresist film of gradient thickness;
Measure the pairing critical size of different-thickness of photoresist film;
Critical size according to measuring obtains the critical size rocking curve.
2. the method for the critical size rocking curve of measuring light carving technology as claimed in claim 1, it is characterized in that described photoresist film in formation gradient thickness on the wafer is: by the rotating speed of adjusting wafer and rotational time forms gradient thickness on wafer photoresist film.
3. the method for the critical size rocking curve of measuring light carving technology as claimed in claim 1 is characterized in that, comprises by the rotating speed of adjusting wafer and rotational time forms gradient thickness on wafer photoresist film:
At the center of wafer spraying photoresist;
Rotate described wafer with predefined high rotating speed;
The rotating speed of described wafer is reduced to the predefined slow-speed of revolution;
The rotating speed that increases with stepping rotates described wafer; With
The rotating speed of described wafer is reduced to the described predefined slow-speed of revolution, is reduced to zero then.
4. the method for the critical size rocking curve of measuring light carving technology as claimed in claim 3 is characterized in that, described predefined high rotating speed is that per minute 1000 to 3000 changes.
5. the method for the critical size rocking curve of measuring light carving technology as claimed in claim 3 is characterized in that, the time of rotating described wafer with predefined high rotating speed is 0.5 to 5 second.
6. the method for the critical size rocking curve of measuring light carving technology as claimed in claim 3 is characterized in that, the described predefined slow-speed of revolution is that per minute 100 to 500 changes.
7. the method for the critical size rocking curve of measuring light carving technology as claimed in claim 3 is characterized in that, the step-length that stepping increases rotating speed is 30 to 300 commentaries on classics.
8. the method for the critical size rocking curve of measuring light carving technology as claimed in claim 3 is characterized in that, the time of rotating described wafer with each rotating speed in the rotating speed of stepping increase is 1 to 10 second.
9. the method for the critical size rocking curve of measuring light carving technology as claimed in claim 3 is characterized in that, the rotating speed that stepping increases is increased to per minute 1000 to 2000 to be changeed.
10. the method for the critical size rocking curve of measuring light carving technology as claimed in claim 1 is characterized in that, the maximum ga(u)ge of the photoresist film of gradient thickness and the difference of minimum thickness are between 1 to 200 nanometer.
11. the method for the critical size rocking curve of measuring light carving technology as claimed in claim 1, it is characterized in that described photoresist film in formation gradient thickness on the wafer is: the photoresist film that forms gradient thickness by the position that is adjusted at spraying photoresist on the wafer.
12. the method for the critical size rocking curve of measuring light carving technology as claimed in claim 11 is characterized in that, the described photoresist film that forms gradient thickness by the position that is adjusted on the wafer spraying photoresist comprises:
Departing from the position spraying photoresist of crystal circle center;
Rotate described wafer with predefined high rotating speed;
The rotating speed of described wafer is reduced to predefined medium speed, is reduced to zero then.
13. the method for the critical size rocking curve of measuring light carving technology as claimed in claim 12 is characterized in that, described position of departing from crystal circle center is the position apart from 1 to 7 millimeter of crystal circle center.
14. the method for the critical size rocking curve of measuring light carving technology as claimed in claim 13 is characterized in that, described position of departing from crystal circle center is the position apart from 5 millimeters of crystal circle center.
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| CN2009101954016A CN102023486B (en) | 2009-09-09 | 2009-09-09 | Method for measuring critical dimension rocking curve of photoetching process |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738058A (en) * | 2011-04-01 | 2012-10-17 | 无锡华润上华半导体有限公司 | Forming method for active area and forming method for STI trench |
| CN103135364A (en) * | 2013-02-21 | 2013-06-05 | 合肥京东方光电科技有限公司 | Photolithographic process parameter determination method and device |
| CN106323181A (en) * | 2016-11-02 | 2017-01-11 | 苏州同冠微电子有限公司 | Determining method for photoresist thickness |
| CN114077166A (en) * | 2021-11-25 | 2022-02-22 | 上海华力集成电路制造有限公司 | Method for obtaining critical dimension rocking curve of photoetching process |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5985363A (en) * | 1997-03-10 | 1999-11-16 | Vanguard International Semiconductor | Method of providing uniform photoresist coatings for tight control of image dimensions |
| KR20040017271A (en) * | 2001-07-03 | 2004-02-26 | 동경 엘렉트론 주식회사 | Coating device and coating method |
| US6733936B1 (en) * | 2002-09-19 | 2004-05-11 | Integrated Device Technology, Inc. | Method for generating a swing curve and photoresist feature formed using swing curve |
| JP4749830B2 (en) * | 2005-10-21 | 2011-08-17 | 東京エレクトロン株式会社 | Resist coating method and resist coating apparatus |
| CN101452215B (en) * | 2007-11-30 | 2010-10-20 | 中芯国际集成电路制造(上海)有限公司 | Control method for key dimension |
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2009
- 2009-09-09 CN CN2009101954016A patent/CN102023486B/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738058A (en) * | 2011-04-01 | 2012-10-17 | 无锡华润上华半导体有限公司 | Forming method for active area and forming method for STI trench |
| CN102738058B (en) * | 2011-04-01 | 2014-08-27 | 无锡华润上华半导体有限公司 | Forming method for active area and forming method for STI trench |
| CN103135364A (en) * | 2013-02-21 | 2013-06-05 | 合肥京东方光电科技有限公司 | Photolithographic process parameter determination method and device |
| CN106323181A (en) * | 2016-11-02 | 2017-01-11 | 苏州同冠微电子有限公司 | Determining method for photoresist thickness |
| CN106323181B (en) * | 2016-11-02 | 2019-02-22 | 苏州同冠微电子有限公司 | The determination method of photoresist thickness |
| CN114077166A (en) * | 2021-11-25 | 2022-02-22 | 上海华力集成电路制造有限公司 | Method for obtaining critical dimension rocking curve of photoetching process |
| CN114077166B (en) * | 2021-11-25 | 2024-01-05 | 上海华力集成电路制造有限公司 | Method for obtaining critical dimension rocking curve of photoetching technology |
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