CN102013405B - 芯片打线接合装置的焊针加热构造及其方法 - Google Patents

芯片打线接合装置的焊针加热构造及其方法 Download PDF

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CN102013405B
CN102013405B CN2009101951215A CN200910195121A CN102013405B CN 102013405 B CN102013405 B CN 102013405B CN 2009101951215 A CN2009101951215 A CN 2009101951215A CN 200910195121 A CN200910195121 A CN 200910195121A CN 102013405 B CN102013405 B CN 102013405B
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capillary
electronic ignition
lead
ignition lever
arc
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CN102013405A (zh
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王德峻
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Ase Assembly & Test (shanghai) Ltd
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Abstract

本发明公开一种芯片打线接合装置的焊针加热构造及其方法，所述芯片打线接合装置是在一焊针的表面设置一电弧加热元件，以承受一电子点火杆的电弧打击而产生热能加热所述焊针，使所述焊针的尖端能提供间接加热功能以保持所述焊针输出的导线所成形的焊球具有适当软硬度(可塑性)，进而提高所述导线与欲接合的焊垫之间的结合可靠度及结合良品率，并相对降低造成焊垫损坏的几率。

Description

芯片打线接合装置的焊针加热构造及其方法
【技术领域】
本发明是有关于一种芯片打线接合装置的焊针加热构造及其方法，特别是有关于一种可利用电弧打击焊针上的电弧加热元件以提供间接加热功能来保持焊球具适当软硬度的芯片打线接合装置的焊针加热构造及焊针加热方法。
【背景技术】
在半导体封装构造制造过程中，打线接合(wire bonding)技术已广泛地应用于半导体芯片与封装基板或导线架之间的电性连接上。一般打线接合制造过程是以金线(gold wire)为主，但相较于金线，由于铜线(copper wire)具有低成本的优势且具有较佳的导电性、导热性及机械强度，因而铜制焊线的线径可设计得更细且散热效率较佳。然而，铜线最大的缺点在于铜金属本身容易与氧起氧化反应；以及铜金属本身的硬度较大，可能在打线期间产生较大的冲击作用力予焊垫表面。上述问题可能影响铜线与半导体芯片或基板的焊垫之间的结合可靠度及结合良品率(yield)，并可能造成焊垫的损坏。
为了解决上述技术问题，美国专利公开第2007/0251980号提出一种打线用还原氧化系统(Reduce Oxidation System for Wire Bonding)，其适用于具有硬度较高的导线(如铜线)，其中一打线机台包含：一结合位置区，用以在打线过程中支撑一半导体装置，所述半导体装置包含一基板及一芯片；一焊针(capillary)，用以输出一具硬度较高的导线(如铜线)；一电子火焰点火杆(electronic flame off wand)，用以在导线的端部形成焊球；一第一气体供应管，用以在导线(如铜线)形成焊球时，提供一氮气及氢气的混合气体，以减少导线的氧化，并利用氢气与周遭氧气的燃烧氧化反应提供热能维持焊球具适当软硬度(或称为可塑性)；以及，一第二气体供应管，具有一出口朝向所述结合位置区，所述第二气体供应管可以由所述结合位置区的上方提供另一混合气体至所述结合位置区，以便在导线结合所述基板及芯片的过程中，减少导线的氧化及维持焊球的软硬度。
虽然上述打线机台可利用所述混合气体的燃烧氧化反应而提供高温，以避免导线氧化及维持焊球的软硬度，但是实际上作业常遇到的问题在于：混合气体所能供应的热量太少，则导线可能仍然硬度太高。因此，若焊球的硬度过大，则可能在打线期间产生过大的冲击作用力予焊垫表面，并可能影响铜线与焊垫之间的结合可靠度及结合良品率(yield)，及可能造成焊垫的损坏。特别是，当焊垫是由硬度较低的铝金属或合金所制成的铝垫时，铜线产生的冲击作用力将更容易损伤铝垫表面，并使焊垫损坏的问题变得更严重。
故，有必要提供一种芯片打线接合装置的焊针加热构造及其方法的改良方案，以解决现有技术所存在的问题。
【发明内容】
本发明的主要目的在于提供一种芯片打线接合装置的焊针加热构造及其方法，其是在焊针表面设置电弧加热元件，以承受电子点火杆的电弧打击而产生热能加热焊针，使焊针尖端能提供间接加热功能以保持焊球具适当软硬度(可塑性)，进而提高导线与焊垫之间的结合可靠度及结合良品率(yield)，并相对降低造成焊垫损坏的机率。
本发明的次要目的在于提供一种芯片打线接合装置的焊针加热构造及其方法，其是利用电源控制系统来控制电子点火杆，使同一电子点火杆能在不同时期用以形成导线的焊球或用以提高焊针的电弧加热元件的温度，使本发明的概念能直接适用于既有打线接合装置中，进而减少设备需求及降低打线加工成本。
本发明的另一目的在于提供一种芯片打线接合装置的焊针加热构造及其方法，其是利用二个不同的电子点火杆分别用以形成导线的焊球或用以提高焊针的电弧加热元件的温度，如此可以在成球期间、之前或之后更快速的提供加热功能，进而提高加热效率及确保焊球的软硬度适中，并可增加对所述焊球加热的模式设定多样性。
本发明的再一目的在于提供一种芯片打线接合装置的焊针加热构造及其方法，其是在焊针表面设有电弧加热元件可以承受电子点火杆的电弧打击，以对焊针及焊球提供加热功能，故能相对减少对氢气燃烧供热的需求，以降低保护气体中氢气的使用量，进而相对降低打线程序的加工成本。
为达成本发明的前述目的，本发明提供一种芯片打线接合装置的焊针加热构造，其特征在于：所述焊针加热构造包含：一焊针及至少一电子点火杆，其中所述焊针包含：一绝缘本体，其具有一杆体部、一缩径部、一导线通道及一供线孔，所述导线通道设于所述杆体部及缩径部内，所述供线孔形成于所述缩径部的末端并连通于所述导线通道，以输出一导线；及一电弧加热元件，其具有一电极部及一电弧加热部，所述电极部及所述电弧加热部形成在所述绝缘本体的表面。所述电子点火杆邻近于所述焊针，以选择产生电弧使所述导线的末端形成所述焊球，或产生电弧于所述电子点火杆与所述电弧加热部之间，以间接提高所述焊球的温度。
在本发明的一实施例中，所述电极部延伸至所述缩径部，且所述电极部在所述缩径部上连接所述电弧加热部，所述电弧加热部邻近于所述供线孔。
在本发明的一实施例中，所述导线为具硬度较高的导线，所述的具硬度较高的导线为铜线、银线、钯线、铝线或其合金线材。
在本发明的一实施例中，所述绝缘本体由陶瓷材料制成，所述陶瓷材料包含氧化铝、氧化锆或其混合。
在本发明的一实施例中，所述电弧加热元件的材料是熔点高于所述导线的金属或合金，所述金属或合金选自钨合金，例如铜钨合金。
在本发明的一实施例中，所述电子点火杆与所述电极部分别连接至同一电源控制系统，其控制所述电子点火杆选择产生电弧使所述导线的末端形成所述焊球，或产生电弧打击所述电弧加热部。
在本发明的一实施例中，所述至少一电子点火杆包含有一第一电子点火杆及一第二电子点火杆，所述第一电子点火杆产生电弧使所述导线的末端形成所述焊球，及所述第二电子点火杆产生电弧打击所述电弧加热部。
在本发明的一实施例中，所述电子点火杆为杆状或环状。
在本发明的一实施例中，所述电弧加热部选自至少一个的环形回路或螺旋形回路。所述环形回路为圆形、Z字型、波浪状或冠状。
另一方面，本发明提供一种芯片打线接合装置的焊针加热方法，其特征在于：所述焊针加热方法包含：提供一半导体封装用元件，其具有至少一焊垫；提供一焊针及至少一电子点火杆，所述焊针包含一绝缘本体及一电弧加热元件，所述绝缘本体具有一杆体部、一缩径部、一导线通道及一供线孔，及所述电弧加热元件附着于所述焊针的绝缘本体上，其中所述电弧加热元件具有一电极部及一电弧加热部，所述电极部及所述电弧加热部形成在所述绝缘本体的表面；由所述焊针的导线通道及供线孔提供一导线，并利用所述电子点火杆产生电弧使所述导线的端部形成一焊球；利用所述电子点火杆产生电弧于所述电子点火杆与所述电弧加热部之间，以间接提高所述焊球的温度；以及，利用所述焊针将所述导线的焊球接合至所述半导体封装用元件的焊垫上。
在本发明的一实施例中，所述焊针及焊球提高的温度介于200℃至所述导线的熔点之间。
在本发明的一实施例中，在所述焊球接合至所述半导体封装用元件的焊垫上之后及所述导线接合至另一半导体封装用元件的焊垫之前，再利用所述电子点火杆产生电弧打击所述电弧加热部，以提高所述焊针及导线的温度。
在本发明的一实施例中，所述半导体封装用元件为半导体芯片或载板，所述载板选自电路基板或导线架。
在本发明的一实施例中，所述电子点火杆与所述电极部分别连接至同一电源控制系统，其控制所述电子点火杆选择产生电弧使所述导线的末端形成所述焊球，或产生电弧打击所述电弧加热部。
在本发明的一实施例中，所述至少一电子点火杆包含有一第一电子点火杆及一第二电子点火杆，所述第一电子点火杆产生电弧使所述导线的末端形成所述焊球，及所述第二电子点火杆产生电弧打击所述电弧加热部。
在本发明的一实施例中，所述电子点火杆在形成所述焊球期间、之前或之后产生电弧于所述电子点火杆与所述电弧加热部之间。
在本发明的一实施例中，所述电子点火杆产生电弧于所述电子点火杆与所述电弧加热部之间的加热模式是间断性加热模式或连续性加热模式。
在本发明的一实施例中，所述焊针被加热后的温度至少为200度。
【附图说明】
图1是本发明第一实施例芯片打线接合装置形成焊球的示意图。
图1A是本发明第一实施例芯片打线接合装置的焊针加热构造的局部放大图。
图2是本发明第一实施例芯片打线接合装置加热焊针及焊球的示意图。
图3是本发明第一实施例芯片打线接合装置将焊球接合至焊垫的示意图。
图4是本发明第一实施例芯片打线接合装置完成打线及返回原位的示意图。
图5是本发明第二实施例芯片打线接合装置的焊针加热构造的示意图。
图6是本发明第三实施例芯片打线接合装置的焊针加热构造的示意图。
图7A、7B及7C是本发明第四、第五及第六实施例芯片打线接合装置的焊针加热构造的局部放大图。
【具体实施方式】
为让本发明上述目的、特征及优点更明显易懂，下文特举本发明较佳实施例，并配合附图，作详细说明如下：
请参照图1所示，本发明第一实施例的芯片打线接合装置主要包含一焊针(capillary)1、至少一电子点火杆(spark rod)2、一第一气体供应管3、一第二气体供应管4及一电源控制系统5，其中至少所述焊针1及/或至少一电子点火杆2是装设在所述接合装置的一可移动式的机构(未绘示)上，以在打线(wire bonding)期间同步或相对移动。在本实施例中，所述焊针1是一中空微型针状元件，用以输出一导线6，所述焊针1包含一绝缘本体11及一电弧加热元件12，所述焊针1的细部构造将于下文另予详细说明。再者，在本实施例中，所述电子点火杆2的数量为单一个，其邻接于所述焊针1并可适时产生电弧(arc)，也就是火花(spark)，以使所述焊针1输出的导线6的端部形成一焊球61。所述电子点火杆2呈杆状并可选择结合在所述第一气体供应管3上。所述第一气体供应管3也邻接于所述焊针1，且所述第一气体供应管3具有一第一供气口31，所述第一供气口31朝向所述焊针1的一导线成球位置并提供一第一保护气体(未绘示)。所述导线成球位置指的是所述导线6的端部形成所述焊球61时所在的一空间位置。再者，所述第二气体供应管4邻接于所述焊针1，且通常与所述第一气体供应管3位在所述焊针1的不同侧。所述第二气体供应管4具有一第二供气口41，所述第二供气口41朝向所述焊针1的一导线焊接位置并提供一第二保护气体(未绘示)。所述导线焊接位置指的是所述导线6焊接至一半导体封装半成品7时所在的一空间位置。在本实施例中，所述第一及第二保护气体优选包含氮(N2)、氩(Ar)或其组合，并可选择另混合有氢(H2)等还原气体。所述第一及第二保护气体所含的气体种类及比例可选择为相同或不同。所述电源控制系统5电性连接至所述电弧加热元件12及电子点火杆2，其控制功能将于下文另予详细说明。另外，所述导线6为硬度较高的导线，例如选自铜线(Cu)、银线(Ag)、钯线(Pd)、铝线(Al)或其合金线材。本实施例中采用的导线为铜线，因此需要提供保护气体来防止铜线的氧化，但是如果导线本身为不易氧化的金属，如表面镀钯的铜线，则不需使用保护气体。所述半导体封装半成品7具有一载板71及至少一半导体芯片72等半导体封装用元件，所述载板71可选自单层或多层的电路基板(substrate)或选自导线架(leadframe)。
请再参照图1及1A所示，本发明第一实施例的焊针1包含所述绝缘本体11及所述电弧加热元件12。所述绝缘本体11由熔点高于所述导线6熔点的耐热绝缘材质所制成，所述耐热绝缘材质优选为陶瓷材料，所述陶瓷材料可包含氧化铝、氧化锆或其混合，但并不限于此。所述绝缘本体11具有一杆体部111、一缩径部112、一导线通道113及一供线孔114，所述杆体部111与缩径部112优选是由耐热绝缘材质所制成的一体成型微型针状元件，在本发明中，所述杆体部111与缩径部112仅是概述其基本形状的差别，两者的实际形状可能因为打线需求而有所改变，例如所述杆体部111可以是圆柱型、多角柱型、多段式柱型或其他杆型或柱型，而所述缩径部112可以是圆锥型、角锥型、多段式渐缩锥型、细针型或外径比所述杆体部111为小的其他型态；惟，所述杆体部111与缩径部112的形状并非用以限制本发明。再者，所述导线通道113是设于所述杆体部111及缩径部112内的一中空通道，其内径稍大于所述导线6，并可由所述导线通道113的顶端输入所述导线6。所述供线孔114则形成于所述缩径部112的末端并连通于所述导线通道113，所述供线孔114可以输出所述导线6，所述供线孔114的形状通常是呈圆弧微凸出状，但并不限于此。
请参照图1、1A及2所示，本发明第一实施例的电弧加热元件12是由具电阻特性且熔点高于所述导线6的金属或合金制成，更详细的说，所述电弧加热元件12的熔点必需高于所述导线6的加热温度设定值(例如介于200℃至所述导线6的熔点之间)，上述电弧加热元件12的金属或合金优选是选自钨合金，例如铜钨(CuW)合金，但并不限于此。所述电弧加热元件12是选择由电镀(electroplating)、蒸镀(evaporation)或溅射(sputtering)来沉积形成在所述绝缘本体11的表面上，或利用网版印刷(printing)方式将含有金属颗粒的复合粉末材料填入所述绝缘本体11的对应形状凹槽(未绘示)内，以形成嵌镶状的所述电弧加热元件12。所述电弧加热元件12的厚度、长度或宽度等尺寸可依产品需求加以调整，本发明并不加以限制。本发明第一实施例的电弧加热元件12具有一电极部121及一电弧加热部122，所述电极部121概呈直线形，其形成在所述绝缘本体11的杆体部111的表面上，并延伸至所述缩径部112，且所述电极部121在所述缩径部112上连接所述电弧加热部122。所述电弧加热部122优选为至少一个的圆形环形回路，所述电弧加热部122邻近于所述供线孔114，而两者之间的距离系依产品需求加以调整。在本实施例中，所述电极部121向外电性连接至所述电源控制系统5，所述电源控制系统5可提供正电(或负电)至所述电极部121，并依加热温度设定值来控制供电频率、电压及电流等参数。所述电极部121将电源导向所述电弧加热部122。同时，同一所述电源控制系统5亦电性连接至所述电子点火杆2，并提供负电(或正电)至所述电子点火杆2，且控制其供电频率、电压及电流等参数。所述电子点火杆2邻近于所述焊针1的缩径部112、供线孔114及电弧加热部122。如此，所述电源控制系统5可控制所述电子点火杆2选择产生电弧使所述导线6的末端形成所述焊球61，或产生电弧于所述电子点火杆2与所述电弧加热部122之间，以提高所述焊针1的温度，并进而间接以提高所述焊球61的温度。
请参照图1、1A、2、3及4所示，当使用本发明第一实施例的芯片打线接合装置进行打线(wire bonding)作业时，本发明的打线接合及焊针加热方法包含下列步骤：提供一半导体封装用元件(即所述半导体芯片72或载板71)，其具有至少一焊垫(未标示)；提供一焊针1及至少一电子点火杆2，所述焊针1包含一绝缘本体11及一电弧加热元件12，所述绝缘本体11具有一杆体部111、一缩径部112、一导线通道113及一供线孔114，及所述电弧加热元件12附着于所述焊针1的绝缘本体11上，其中所述电弧加热元件12具有一电极部121及一电弧加热部122，所述电极部121形成在所述杆体部111的表面并延伸至所述缩径部112，并且所述电极部121在所述缩径部112上连接所述电弧加热部122，所述电弧加热部122邻近于所述供线孔114；由所述焊针1的导线通道113及供线孔114提供一导线6，并利用所述电子点火杆2产生电弧使所述导线6的端部形成一焊球61；利用所述电子点火杆2产生电弧打击所述电弧加热部122，以提高所述焊针1及焊球61的温度；以及，利用所述焊针1将所述导线6的焊球61接合至所述半导体封装用元件的焊垫上。
在上述打线接合及焊针加热方法中，如第1及1A图所示，所述芯片打线接合装置下方预先放置有所述半导体封装半成品7，其具有所述载板71及至少一所述半导体芯片72，所述载板71及半导体芯片72的表面各具有至少一焊垫(未标示)。在使用时，由所述焊针1的供线孔114输出一具硬度较高的导线6，利用所述电源控制系统5控制所述电子点火杆2产生电弧，使所述导线6的端部在所述导线成球位置形成一焊球61，并在成球期间利用所述第一气体供应管3的第一供气口31朝向所述导线成球位置提供一第一保护气体(未绘示)。接着，如第2图所示，移动所述焊针1及其输出的导线6，当所述焊针1位于所述导线成球位置及导线焊接位置之间时，再次利用所述电源控制系统5控制所述电子点火杆2产生电弧打击所述电弧加热部122，使所述电弧加热部122被动的产生热能，进而提高所述焊针1及焊球61的温度，以确保所述焊球61在焊接前具有适当软硬度。随后，如第3图所示，继续移动所述焊针1及其输出的导线6至所述导线焊接位置进行焊接，并在焊接期间利用所述第二气体供应管4的供气口41朝向所述导线焊接位置提供一第二保护气体(未绘示)。在焊接期间，所述焊针1首先压迫所述导线6的焊球61，使所述焊球61焊接结合至所述半导体芯片72(或载板71)表面的焊垫上；接着，如第4图所示，所述焊针1牵引所述导线6，并由所述供线孔11进一步输出一段长度的导线6，直到所述导线6延伸至所述载板71(或半导体芯片72)的焊垫上。之后，所述焊针1压迫所述导线6，使所述导线6焊接结合至所述载板71(或半导体芯片72)的焊垫上，并扯断所述导线6。在完成焊接动作后，所述焊针1回复至原来最初的所述导线成球位置，以进行下一周期的成球及焊接动作。再者，如第4图所示，必要时，在所述焊球61完成焊接之后及所述导线6接合至所述载板71(或半导体芯片72)的焊垫之前，本发明亦可能进一步利用所述电源控制系统5控制所述电子点火杆2产生电弧打击所述电弧加热部122，以提高所述焊针1及导线6的温度，以确保所述导线6在第2次接合至所述载板71(或半导体芯片72)的焊垫之前具有适当软硬度。
值得注意的是，在上述成球及焊接期间，本发明芯片打线接合装置的电极部121及电子点火杆2皆受所述电源控制系统5控制，使得所述电子点火杆2可以先产生电弧使所述导线6的末端形成所述焊球61，接着再产生电弧打击所述电弧加热部122，以提高所述焊针1及焊球61的温度。如此，所述电弧火花打击产生的热能可以使所述绝缘本体11的缩径部112在邻近于所述供线孔114的位置处保持在一加热温度设定值，例如介于200℃至所述导线6的熔点之间；若所述导线6为铜合金导线，假设铜合金导线的熔点约为1100℃，则所述预热温度设定值可设定在200℃至500℃之间，但并不限于此。因此，所述电弧加热元件12将可确实提供加热功能，以保持所述焊球61具适当软硬度(可塑性)，进而在焊接期间提高所述导线6与所述半导体芯片72的焊垫之间的结合可靠度及结合良品率(yield)，并相对降低造成所述焊垫损坏的机率。在本实施例中，由于利用所述电源控制系统5来控制所述电子点火杆2，因而使同一电子点火杆2能在不同时期用以形成所述焊球61或用以提高所述焊针1的电弧加热元件12的温度，因此使本发明的概念能直接适用于既有打线接合装置中，而不需大幅更改既有打线接合装置，进而有利于减少设备需求及降低打线加工成本。
请参照图5所示，本发明第二实施例的芯片打线接合装置的焊针加热构造相似于本发明第一实施例，并大致沿用相同图号，但第二实施例的差异特征在于：所述第二实施例的至少一电子点火杆2包含有一第一电子点火杆21及一第二电子点火杆22，其中所述电源控制系统5可控制所述第一电子点火杆21产生电弧，使所述导线6的末端形成所述焊球61；及所述电源控制系统5另可控制所述第二电子点火杆22产生电弧打击所述电弧加热部122，以提高所述焊针1及焊球61的温度。由于利用二个不同的电子点火杆21、22分别用以形成所述导线6的焊球61或用以提高所述焊针1的电弧加热元件12的温度，因此所述电子点火杆22可以在成球期间、之前或之后更快速的产生电弧于所述电子点火杆22与所述电弧加热部122之间来提供加热功能，且所述电子点火杆22的加热模式不但可以如第一实施例般是间断性加热模式(也就是仅在成球期之前及/或之后加热)，而且更可以是连续性加热模式(也就是在成球期间、之前及之后皆加热)。因而，本发明第二实施例不但可提高加热效率及确保焊球的软硬度适中，亦可增加对所述焊球61加热的模式设定多样性。
请参照图6所示，本发明第三实施例的芯片打线接合装置的焊针加热构造相似于本发明第一实施例，并大致沿用相同图号，但第三实施例的差异特征在于：所述第三实施例的电子点火杆2是设计成环状，其在不同步骤中同样可产生电弧，使所述导线6的末端形成所述焊球61；或产生电弧打击所述电弧加热部122，以提高所述焊针1及焊球61的温度。特别是，由于所述电子点火杆2是设计成环状，因此将能提高电弧打击所述电弧加热部122的有效打击面积及其加热效率。
请参照图7A、7B及7C所示，本发明第四、第五及第六实施例的芯片打线接合装置的焊针加热构造相似于本发明第一实施例，并大致沿用相同图号，但第四、第五及第六实施例的差异特征在于：如图7A所示，所述第四实施例的电弧加热部122是设计成Z字型的环形回路或其他类似的波浪状环形回路；如图7B所示，所述第五实施例的电弧加热部122是设计成冠状(或城垣状)的环形回路；及如图7C所示，所述第六实施例的电弧加热部122是设计成螺旋形的回路。通过改变所述电弧加热部122的形状，可以增加其总长度，进而提高电弧打击所述电弧加热部122的有效打击面积，同时亦可以提高加热所述焊针1的缩径部112的有效加热面积。
如上所述，相较于现有的打线机台应用于将硬度较高的导线接合至较度较低的焊垫(如铝垫)上时，导线产生的冲击作用力十分容易损伤焊垫表面，而导致可能影响导线与焊垫之间的结合可靠度及结合良品率等缺点，图1至7C的本发明通过在所述焊针1表面设置所述电弧加热元件12以承受所述电子点火杆2的电弧打击，并产生热能加热所述焊针1，使所述焊针1尖端能提供间接加热功能以保持所述焊球61具适当软硬度(可塑性)，进而提高所述导线6与所述半导体芯片72(或载板71)的焊垫之间的结合可靠度及结合良品率(yield)，并相对降低造成焊垫损坏的机率。再者，本发明可利用所述电源控制系统5来控制所述电子点火杆2，使同一电子点火杆2能在不同时期用以形成所述导线6的焊球61或用以提高所述焊针1的电弧加热元件12的温度，使本发明的概念能直接适用于既有打线接合装置中，进而减少设备需求及降低打线加工成本。或者，本发明也可利用二个不同的电子点火杆21、22分别用以形成所述导线6的焊球61或用以提高所述焊针1的电弧加热元件12的温度，如此可以在成球期间、之前或之后更快速的提供加热功能，进而提高加热效率及确保焊球的软硬度适中。另外，由于本发明在所述焊针1表面设有所述电弧加热元件12可以承受所述电子点火杆2的电弧打击，以对所述焊针1及焊球61提供加热功能，故能相对减少对氢气燃烧供热的需求，以降低所述保护气体中氢气的使用量，进而相对降低打线程序的加工成本。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。

Claims (14)

1.一种芯片打线接合装置的焊针加热构造，其特征在于：所述焊针加热构造包含：
一焊针，其包含：
一绝缘本体，其具有一杆体部、一缩径部、一导线通道及一供线孔，所述导线通道设于所述杆体部及缩径部内，所述供线孔形成于所述缩径部的末端并连通于所述导线通道，以输出一导线；及
一电弧加热元件，其具有一电极部及一电弧加热部，所述电极部及所述电弧加热部形成在所述绝缘本体的表面；及
至少一电子点火杆，其邻近于所述焊针，利用所述电子点火杆产生电弧使所述导线的末端形成一焊球，并利用所述电子点火杆产生电弧于所述电子点火杆与所述电弧加热部之间，以提高所述焊球的温度。
2.如权利要求1所述的芯片打线接合装置的焊针加热构造，其特征在于：所述电极部延伸至所述缩径部，且所述电极部在所述缩径部上连接所述电弧加热部，所述电弧加热部邻近于所述供线孔。
3.如权利要求1所述的芯片打线接合装置的焊针加热构造，其特征在于：所述导线为铜线、银线、钯线、铝线或其合金线材。
4.如权利要求1所述的芯片打线接合装置的焊针加热构造，其特征在于：所述绝缘本体由陶瓷材料制成，所述陶瓷材料包含氧化铝、氧化锆或其混合。
5.如权利要求1所述的芯片打线接合装置的焊针加热构造，其特征在于：所述电弧加热元件的材料是熔点高于所述导线的金属或合金。
6.如权利要求4所述的芯片打线接合装置的焊针加热构造，其特征在于：所述所述电弧加热元件的材料选自铜钨合金。
7.如权利要求1所述的芯片打线接合装置的焊针加热构造，其特征在于：所述电子点火杆与所述电极部分别连接至同一电源控制系统，其控制所述电子点火杆选择产生电弧使所述导线的末端形成所述焊球，或产生电弧打击所述电弧加热部。
8.如权利要求1所述的芯片打线接合装置的焊针加热构造，其特征在于：所述至少一电子点火杆包含有一第一电子点火杆及一第二电子点火杆，所述第一电子点火杆产生电弧使所述导线的末端形成所述焊球，及所述第二电子点火杆产生电弧打击所述电弧加热部。
9.如权利要求1所述的芯片打线接合装置的焊针加热构造，其特征在于：所述电子点火杆为杆状或环状。
10.如权利要求1所述的芯片打线接合装置的焊针加热构造，其特征在于：所述电弧加热部选自至少一个的环形回路或螺旋形回路，其中所述环形回路为圆形、Z字型、波浪状或冠状。
11.一种芯片打线接合装置的焊针加热方法，其特征在于：所述焊针加热方法包含：
提供一半导体封装用元件，其具有至少一焊垫；
提供一焊针及至少一电子点火杆，所述焊针包含一绝缘本体及一电弧加热元件，所述绝缘本体具有一杆体部、一缩径部、一导线通道及一供线孔，及所述电弧加热元件附着于所述焊针的绝缘本体上，其中所述电弧加热元件具有一电极部及一电弧加热部，所述电极部及所述电弧加热部形成在所述绝缘本体的表面；
由所述焊针的导线通道及供线孔提供一导线，并利用所述电子点火杆产生电弧使所述导线的端部形成一焊球；
利用所述电子点火杆产生电弧于所述电子点火杆与所述电弧加热部之间，以提高所述焊球的温度；及
利用所述焊针将所述导线的焊球接合至所述半导体封装用元件的焊垫上。
12.如权利要求11所述的芯片打线接合装置的焊针加热方法，其特征在于：所述电子点火杆在形成所述焊球到所述焊球接合至所述半导体封装用元件的焊垫期间产生电弧于所述电子点火杆与所述电弧加热部之间。
13.如权利要求12所述的芯片打线接合装置的焊针加热方法，其特征在于：所述电子点火杆在所述芯片打线接合过程中持续产生电弧于所述电子点火杆与所述电弧加热部之间加热。
14.如权利要求11所述的芯片打线接合装置的焊针加热方法，其特征在于：所述焊针被加热后的温度至少为200度。
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US4513190A (en) * 1983-01-03 1985-04-23 Small Precision Tools, Inc. Protection of semiconductor wire bonding capillary from spark erosion

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