CN101820007B - High-conversion rate silicon and thin film compound type multijunction PIN solar cell and manufacturing method thereof - Google Patents
High-conversion rate silicon and thin film compound type multijunction PIN solar cell and manufacturing method thereof Download PDFInfo
- Publication number
- CN101820007B CN101820007B CN200910044771XA CN200910044771A CN101820007B CN 101820007 B CN101820007 B CN 101820007B CN 200910044771X A CN200910044771X A CN 200910044771XA CN 200910044771 A CN200910044771 A CN 200910044771A CN 101820007 B CN101820007 B CN 101820007B
- Authority
- CN
- China
- Prior art keywords
- layer
- film
- silicon
- sic
- epi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention provides a high-conversion rate silicon and thin film compound type multijunction PIN solar cell and a manufacturing method thereof. The silicon and thin film compound type multijunction structure can be adopted from relevant six materials to form the two-junction, three-junction, four-junction, five-junction or six-junction thin film solar cell. The manufacturing method adopts a double-face polishing process, an ion implantation process, a plasma-strengthened chemical vapor deposition process, a laser crystallization process, a plasma-doping process and a PECVD (Plasma Enhanced Chemical Vapor Deposition) transition laminate process to improve the interface performance among laminates, for example, reducing the interface resistance among the laminates and strengthening the crystallization performance of thin-film materials, and uses a hydrotreating process for keeping the performance stability of the material of each laminate and improving the light transmittance and the electrical conductivity of the transparent conducting thin-film materials and interfaces. The conversion rate of the cell can reach 25%-30%, and the cell has better stability.
Description
Technical field
The present invention relates to solar cell, particularly crystalline silicon and silicon-based film solar cells structure and manufacture method thereof.
Background technology
Since French scientist AE.Becquerel after finding the opto-electronic conversion phenomenon in 1839, first was that the solar cell of substrate is born with semiconductor selenium in 1883.Nineteen forty-six RuSSell has obtained the patent (US.2,402,662) of first solar cell, and its photoelectric conversion efficiency only is 1%.Up to 1954, the research of Bell Laboratory found that just the silica-base material that mixes has high photoelectric conversion efficiency.This research can be laid a good foundation by battery industry for modern sun.In 1958, U.S. Haffman Utilities Electric Co. was that the satellite of the U.S. has been loaded onto first solar panel, and its photoelectric conversion efficiency is about 6%.From then on, solar cell research and the production of monocrystalline silicon and polycrystalline silicon substrate have had development fast, the output of solar cell in 2006 has reached 2000 megawatts, the photoelectric conversion efficiency of monocrystaline silicon solar cell reaches 24.7%, commercial product reaches 22.7%, the photoelectric conversion efficiency of polysilicon solar cell reaches 20.3%, and commercial product reaches 15.3%.
On the other hand, the Zhores Alferov of the Soviet Union in 1970 has developed the high efficiency III-V family solar cell of first GaAs base.Because the key technology MOCVD (metal organic chemical vapor deposition) of preparation III-V family thin-film material was was just successfully researched and developed up to about 1980, the applied solar energy Battery Company of the U.S. was successfully used this technology and is prepared the III-V family solar cell that photoelectric conversion efficiency is 17% GaAs base in 1988.Thereafter, be the doping techniques of the III-V family material of substrate with GaAs, the technology of preparing of plural serial stage solar cell has obtained research and development widely, its photoelectric conversion efficiency reached 19% in 1993, reached 24% in 2000, reach 26%, 2005 year in 2002 and reach 28%, 2007 year and reach 30%.2007, the U.S. two big Emcore of solar cell company of III-V family and SpectroLab have produced high efficiency III-V family solar energy commercial product, its photoelectric conversion rate reaches 38%, this two company occupies 95% of global III-V family solar cell market, recently American National Energy Research Institute announces, they have have successfully researched and developed its photoelectric conversion efficiency up to the III-V family solar cell of 50% plural serial stage.Because the substrate costliness of this class solar cell, equipment and technology cost height are mainly used in fields such as Aeronautics and Astronautics, national defence and military project.
External solar cell research and production roughly can be divided into three phases, and three generations's solar cell is namely arranged.
First generation solar cell is that the solar cell with monocrystalline silicon and the silica-based single constituent element of polycrystalline is representative basically.Only pay attention to improve photoelectric conversion efficiency and large-scale production, exist high energy consumption, labour intensive, to problems such as environment are unfriendly and expensive, its price that produces electricity is about 5～6 times of coal electricity; Until 2007, the output of first generation solar cell still accounted for 89% of global solar battery total amount, and the expert estimates that first generation solar cell will progressively be eliminated and become history after 10 years.
Second generation solar cell is thin-film solar cells, is new developing technology in recent years, and it pays attention to reduce energy consumption and technology cost in the production process, and brainstrust is called green photovoltaic industry.Compare with polysilicon solar cell with monocrystalline silicon, the consumption of its film HIGH-PURITY SILICON is its 1%, simultaneously, and low-temperature plasma enhanced chemical vapor deposition deposition technique, the production of thin-film solar cells is studied and be applied to electroplating technology, printing technology widely.Owing to adopt glass, stainless steel thin slice cheaply, the macromolecule substrate greatly reduces production cost as baseplate material, and is conducive to large-scale production.The material of the thin-film solar cells of success research and development is at present: CdTe, and its photoelectric conversion efficiency is 16.5%, and commercial product is about 7%; CulnSe, its photoelectric conversion efficiency is 19.5%, commercial product is 11%; Amorphous silicon and microcrystal silicon, its photoelectric conversion efficiency are 8.3～15%, and commercial product is 7～13.3%, in recent years, because the research and development of the thin-film transistor of LCD TV, amorphous silicon and microcrystalline silicon film technology have had significant progress, and are applied to silicon-based film solar cells.Brainstrust is estimated, because thin-film solar cells has low cost, and high efficient, the ability of large-scale production, at 5～10 years of future, thin-film solar cells will become the main product of global solar battery.Focus around thin-film solar cells research is that exploitation is efficient, low-cost, long-life photovoltaic solar cell.They should have following feature: low cost, high efficiency, long-life, material source are abundant, nontoxic, the relatively more good amorphous silicon thin-film solar cell of scientists.The thin-film solar cells that accounts for lion's share at present is non-crystal silicon solar cell, is generally pin structure battery, and Window layer is the P type amorphous silicon of boron-doping, then deposits the unadulterated i layer of one deck, deposits the N-type amorphous silicon that one deck is mixed phosphorus again, and plated electrode.
Amorphous silicon battery generally adopts PECVD (Plasma Enhanced Chemical VaporDeposition---plasma enhanced chemical vapor deposition) method to make gas such as high purity silane decompose that deposition forms.This kind manufacture craft can be finished in a plurality of vacuum deposition chamber aborning continuously, to realize production in enormous quantities.Because the deposition decomposition temperature is low, can be on glass, corrosion resistant plate, ceramic wafer, flexible plastic sheet deposit film, be easy to large tracts of land production, cost is lower.The structure of the amorphous silicon based solar battery for preparing in glass substrate is: Glass/TCO/p-a-SiC:H/i-a-Si:H/n-a-Si:H/Al, the structure of the amorphous silicon based solar battery for preparing at the bottom of stainless steel lining is: SS/ZnO/n-a-Si:H/i-a-Si (Ge): H/p-na-Si:H/ITO/Al.
Improve the valid approach of battery efficiency is to improve the efficiency of light absorption of battery as far as possible.For silica-base film, adopting low bandgap material is inevitable approach.The low bandgap material that adopts as Uni-Solar company is a-SiGe (amorphous silicon germanium) alloy, their a-Si/a-SiGe/a-SiGe three knot laminated cells, small size battery (0.25cm
2) efficient reaches 15.2%, stabilization efficiency reaches 13%, 900cm
2Component efficiency reaches 11.4%, and stabilization efficiency reaches 10.2%, and product efficiency reaches 7%-8%.
Internationally recognized amorphous silicon/microcrystalline silicon tandem solar cell is the next-generation technology of silicon-base thin-film battery, is the important technology approach that realizes the high efficiency, low cost thin-film solar cells, is the new industrialization direction of hull cell.The amorphous silicon/microcrystalline silicon tandem battery component sample efficient of Mitsubishi heavy industry in 2005 and clock deep pool chemical company reaches 11.1% respectively (40cm * 50cm) and 13.5% (91cm * 45cm).Japanese Sharp company realizes amorphous silicon/microcrystalline silicon tandem solar cell industry production (25MW in September, 2007, efficient 8%-8.5%), Europe Oerlikon (Ao Likang) company, U.S. AppliedMaterials (Applied Materials) are are also just researching and developing product level amorphous silicon/microcrystal silicon battery key manufacture.
Domestic, Nankai University is support with country " 15 ", Eleventh Five-Year Plan 973 projects and Eleventh Five-Year Plan 863 projects, carries out the research of microcrystal silicon material and amorphous silicon/microcrystalline silicon tandem battery.Small size microcrystal silicon battery efficiency reaches 9.36%, and the amorphous silicon/microcrystalline silicon tandem battery efficiency reaches 11.8%, 10cm * 10cm component efficiency and reaches 9.7%.Now just cooperate with Fujian an ancient unit of weight stone energy company, carry out the research and development of square meter level amorphous silicon/microcrystalline silicon tandem battery key equipment and battery manufacturing technology.
Silicon-base thin-film battery mainly contains three kinds of structures at present: being unijunction or the double junction non-crystal silicon battery of substrate with glass, is amorphous silicon and the microcrystal silicon binode battery of substrate with glass, is amorphous silicon and amorphous germanium silicon alloy three junction batteries of substrate with the stainless steel.Because various products have its special advantages, in that these three kinds of battery structures of following period of time also can synchronized development from now on.The long term growth direction of silicon-base thin-film battery is clearly, except taking full advantage of its special advantages, mainly is the problem that overcomes product development, the existence of production and selling aspect.Silicon-base thin-film battery will further improve battery efficiency, utilizes the microcrystal silicon battery can further improve battery efficiency as the end battery of multijunction cell, reduces the photoinduction decline of battery.
The technological difficulties of microcrystal silicon battery industryization are the uniformities that realizes the high speed deposition technology of microcrystal silicon and realize large tracts of land microcrystalline silicon film material at present.If the technical barrier of microcrystal silicon large tracts of land high speed deposition aspect can be resolved, estimate that in the near future the multijunction cell that amorphous silicon and microcrystal silicon combine will become the major product of silicon-base thin-film battery in the short time.Amorphous silicon and microcrystal silicon multijunction cell can be deposited on the glass substrate, also can be deposited on the flexible substrate, and no matter be can adopt amorphous and microcrystal silicon multijunction cell structure with glass or the silicon-base thin-film battery that deposits with flexible substrate.
Present gyp silicon-based film solar cells is the amorphous silicon membrane solar cell.Because the energy gap of amorphous silicon is 1.7, it only can absorbing wavelength at the solar energy of 400-500nm.Because its solar energy conversion efficiency is low, about about 6%, the transfer ratio of this silicon-based film solar cells remains to be improved greatly
Though the technology of above several aspects and background material, the someone mentions the material that adopts different energy gaps and expands absorption spectrum to solar energy.But the someone adopts a series as yet so far, and six kinds of materials with different energy gaps constitute the thin-film solar cells of many knot multi-laminate PIN structures, and nobody develops the manufacturing technology of the thin-film solar cells of the many folded PIN structures of this many knots of preparation.Yet nobody develops this high conversion silicon wafer of preparation and the many folded PIN solar cells of the many knots of film composite type and manufacture method thereof.
Summary of the invention
The technical problem to be solved in the present invention is, deficiency at the prior art existence, the solar cell of monocrystalline silicon and the silica-based single constituent element of polycrystalline is combined with silicon-based film solar cells, propose a kind of high conversion silicon wafer and film composite type and tie PIN solar cell and manufacture method thereof more, the gained battery has higher conversion efficiency and advantages of excellent stability.
One of technical scheme of the present invention is, the structure that described high conversion silicon wafer and film composite type are tied the PIN solar cell more is following one of all kinds of:
(1) hearth electrode/n layer/i layer/p layer/middle reflector/n
+Type silicon layer/n type silicon wafer/p
+Type silicon layer/middle reflector/n layer/i layer/p layer/middle reflector/n layer/i layer/p layer/middle reflector/n layer/i layer/p layer/middle reflector/n layer/i layer/p layer/middle reflector/n layer/i layer/p layer/middle reflector/n layer/i layer/p layer/TCO-Al/ antireflective coating;
(2) hearth electrode/n layer/i layer/p layer/middle reflector/n
+Type silicon layer/n type silicon wafer/p
+Type silicon layer/middle reflector/n layer/i layer/p layer/middle reflector/n layer/i layer/p layer/middle reflector/n layer/i layer/p layer/middle reflector/n layer/i layer/p layer/middle reflector/n layer/i layer/p layer/TCO-Al/ antireflective coating;
(3) hearth electrode/n layer/i layer/p layer/middle reflector/n
+Type silicon layer/n type silicon wafer/p
+Type silicon layer/middle reflector/n layer/i layer/p layer/middle reflector/n layer/i layer/p layer/middle reflector/n layer/i layer/p layer/middle reflector/n layer/i layer/p layer/TCO-Al/ antireflective coating;
(4) hearth electrode/n layer/i layer/p layer/middle reflector/n
+Type silicon layer/n type silicon wafer/p
+Type silicon layer/middle reflector/n layer/i layer/p layer/middle reflector/n layer/i layer/p layer/middle reflector/n layer/i layer/p layer/TCO-Al/ antireflective coating;
(5) hearth electrode/n layer/i layer/p layer/middle reflector/n
+Type silicon layer/n type silicon wafer/p
+Type silicon layer/middle reflector/n layer/i layer/p layer/middle reflector/n layer/i layer/p layer/TCO-Al/ antireflective coating;
(6) hearth electrode/n layer/i layer/p layer/middle reflector/n
+Type silicon layer/n type silicon wafer/p
+Type silicon layer/middle reflector/n layer/p layer/middle reflector/n layer/p layer/middle reflector/n layer/p layer/middle reflector/n layer/p layer/middle reflector/n layer/p layer/middle reflector/n layer/p layer/TCO-Al/ antireflective coating;
(7) hearth electrode/n layer/i layer/p layer/middle reflector/n
+Type silicon layer/n type silicon wafer/p
+Type silicon layer/middle reflector/n layer/p layer/middle reflector/n layer/p layer/middle reflector/n layer/p layer/middle reflector/n layer/p layer/middle reflector/n layer/p layer/TCO-Al/ antireflective coating;
(8) hearth electrode/n layer/i layer/p layer/middle reflector/n
+Type silicon layer/n type silicon wafer/p
+Type silicon layer/middle reflector/n layer/p layer/middle reflector/n layer/p layer/middle reflector/n layer/p layer/middle reflector/n layer/p layer/TCO-Al/ antireflective coating;
(9) hearth electrode/n layer/i layer/p layer/middle reflector/n
+Type silicon layer/n type silicon wafer/p
+Type silicon layer/middle reflector/n layer/p layer/middle reflector/n layer/p layer/middle reflector/n layer/p layer/TCO-Al/ antireflective coating;
(10) hearth electrode/n layer/i layer/p layer/middle reflector/n
+Type silicon layer/n type silicon wafer/p
+Type silicon layer/middle reflector/n layer/p layer/middle reflector/n layer/p layer/TCO-Al/ antireflective coating;
(11) hearth electrode/n layer/i layer/p layer/middle reflector/n
+Type silicon layer/n type silicon wafer/p
+Type silicon layer/middle reflector/n layer/p layer/TCO-Al/ antireflective coating;
(12) hearth electrode/n layer/i layer/p layer/middle reflector/n
+Type silicon layer/n type silicon wafer/p
+The type silicon layer //the TCO-Al/ antireflective coating;
Wherein, described p layer, i layer, n layer all are to be selected from μ c-Si
1-xGe
x, A-Si
1-xGe
x, a kind of in μ c-SiC, A-SiC, μ c-Si, the A-Si semi-conducting material, rete between the reflector is a knot between TCO-Al layer and the adjacent middle reflector and in the middle of adjacent two, and the used semi-conducting material of each rete is identical and form pin knot or pn knot because of the difference of mixing in every knot; 0≤x≤1; Interface between "/" expression is two-layer; N-represents electron type (n type) semiconductor, and i-represents intrinsic semiconductor, and P-represents cavity type (P type) semiconductor; A-represents noncrystal, and μ c-represents crystallite.
n
+The type silicon layer can be the silicon layer that forms at n type silicon wafer by the method that phosphorus (p) ion injects and doping is spread, P
+Silicon layer can be the silicon layer that forms at n type silicon wafer by the method that boron (B) ion injects and doping is spread, thereby forms described n
+Type silicon layer/n type silicon wafer/p
+The type silicon layer.
A kind of concrete composition of above-mentioned battery structure is: hearth electrode/n-epi-Ge/i-gradient epi-Si
1-xGe
xReflector/n in the middle of the/p-epi-Si/
+Type silicon layer/n type silicon wafer/p
+Reflector/n-A-Si in the middle of type silicon layer/middle reflector/n-μ c-Si/i-μ c-Si/p-μ c-Si/
1-xGe
x/ i-gradient A-Si
1-xGe
xReflector in the middle of reflector in the middle of reflector in the middle of the/p-A-Si//n-A-Si/i-A-Si/p-A-Si//n-μ c-SiC/i-μ c-SiC/p-μ c-SiC//n-A-SiC/i-A-SiC/p-A-SiC/TCO-Al/ antireflective coating; Wherein, epi refers to epitaxial growth single crystalline layer (epitaxy), represents electron type (n type) semiconductor epitaxial growing single-crystal layer as n-epi-Ge; " gradient " refers to SiGe (Si
1-xGe
x) value (0≤x≤1) by changing x is from 1 graded to 0 progressively, and SiGe (Si
1-xGe
x) then from (Ge) germanium layer-gradient silicon germanide layer-change to silicon layer (Si) layer.
In the said structure, PIN structure (n layer/i layer/p layer) also can use PN junction structure (n layer/p layer) to substitute.
In the said structure, described silicon wafer can be monocrystalline silicon piece or polysilicon chip.
In the said structure, described antireflective coating can be porous SiO
2Film, or nanofiber SiO
2Film, or SiO
2/ TiO
2Composite membrane etc.Wherein, porous SiO
2Film can be selected porosity 10-50% for use, the porous SiO of aperture 50nm-1000nm
2The film product; Described nanofiber SiO
2Can select fibre diameter 50nm-500nm for use, draw ratio 1: 5-1: 10 nanofiber SiO
2Described SiO
2/ TiO
2Composite membrane can be the compound and MULTILAYER COMPOSITE of individual layer, for example: TiO
2(145nm)/SiO
2(95nm) or TiO
2(15nm)/SiO
2(35nm)/TiO
2(150nm)/SiO
2(100nm) etc.
In the said structure, described TCO-Al layer is the electrically conducting transparent aluminum oxide film, and its technical parameter can be selected for use: purity is more than 99.9%, and visible light transmissivity is greater than 90%; Resistivity is less than 1 * 10
-3Ohmcm, film thickness 50nm-5000nm; TCO (transparent conductive oxide film) can also be Ag, Ga, the ZnO of doping
x, ITO transparent conductive oxide film material etc.; This layer can be with PVD or colloidal sol, the gel method preparation.
In the said structure, described in the middle of the reflector be the rete with good electrical conductivity, it can be by the ZnO of Ag or Al, Ga, doping
x, SiN
x, SiO
x, material such as ITO makes, and can be with PVD or PECVD, or colloidal sol, the gel method preparation; The available technical parameter of this rete-group is: material purity is greater than 99.9%, and resistivity is less than 1 * 10
-3Ohmcm, film thickness 50nm-5000nm.The reflector can allow the long-pass of certain wavelengths scope cross and reflect the shortwave of certain wavelengths scope in the middle of described.
The electric current of many knot multi-laminate PIN structures of the present invention changes little, improves voltage by increasing footing, thereby improves the efficient of thin-film solar cells.Be the luminous energy (Eg is the energy gap width of material) of the spectral domain of 1.24Eg (eV) because the utilizable energy of a kind of solar cell of material is wavelength ratio.If the film of the different band gap material of homogeneity stack then can utilize the more luminous energy in wide range territory, can increase the efficiency of light absorption of solar cell thus; In the many lamination solar cells of many knots of the present invention, utilize wide gap material to do top electricity knot, short wavelength's luminous energy is converted into electric energy; Utilize the arrowband material to do end electricity knot, speciality wavelength luminous energy can be converted into electric energy.Owing to taken full advantage of the spectral domain of sunlight more, tied many lamination solar cells more and have higher photoelectric conversion efficiency.If in the many lamination solar cells of many knots, have between each knot of different energy gap width, step by step incident and total reflection carried out to the incident light of each wave band in the reflector in the middle of adding, and increases solar cell to the absorption of light thereby increase its light path in battery, and improved conversion efficiency.
Two of technical scheme of the present invention is that described high conversion silicon wafer and film composite type tie the PIN solar cell more and manufacture method comprises:
N type silicon wafer (monocrystalline silicon piece or polysilicon chip) is carried out chemistry or machinery (CMP) twin polishing; Then,
N type silicon wafer (monocrystalline silicon piece and polysilicon chip) is cleaned; Then,
N type silicon wafer (monocrystalline silicon piece or polysilicon chip) is carried out ion inject formation n
+Type silicon layer/n type silicon wafer/p
+The type silicon layer (is n
+-layer-n-type silicon wafer-p
+-layer) structure;
Prepare tco layer, antireflective coating with common process;
Adopt PECVD (plasma enhanced chemical vapor deposition technology), CVD (chemical vapor deposition method), laser crystallization technology, plasma doping technology and pecvd process prepare silica-base film, to obtain high-quality rete and to reduce interface resistance between each lamination;
The amorphous silicon of described silica-base film or microcrystalline silicon film generally adopt PECVD (Plasma EnhancedChemical Vapor Deposition-plasma enhanced chemical vapor deposition) method, are carrier gas with hydrogen, use high purity silane (SiH
4) decompose deposition and form.
Described amorphous or crystallite Si
1-xGe
xFilm generally adopts SiH
4And GeH
4Be reaction precursor, H
2Be carrier gas, the reaction decomposes deposition forms.
Described amorphous or crystallite SiC film generally adopt SiH
4And CH
4Be reaction precursor, H
2Be carrier gas, the reaction decomposes deposition forms.
The reflector film generally adopts SiH in the middle of the Si oxide of described Silicon-rich
4And NO
2Be reaction precursor, H
2Be carrier gas, the reaction decomposes deposition forms.
Described P-type and N-type silica-base film generally adopt PH
3(N-type) and B
2H
6(P-type) plasma doping is realized.
The plasma enhanced chemical vapor deposition temperature is 200 ℃-400 ℃.
Described Si
1-xGe
xSingle crystal epitaxial film adopt chemical vapor deposition method to use SiH
4And GeH
4Be reaction precursor, H
2Be carrier gas, 600 ℃-1000 ℃ of reaction temperatures, deposition forms.
The silica-base film layer is carried out hydrogenation treatment, to keep the stable of each film material performance and to improve light transmittance and the conductivity at transparent conductive film material and interface.
These thin-film materials also can prepare with HD-PECVD.
In the manufacture method of the present invention, silicon wafer (monocrystalline silicon piece or polysilicon chip) is carried out cleaning carries out in two steps:
The first step is used HCl: H
2O
2: H
2O=10: 1: 50 solution cleaned 5 minutes-10 minutes at 60 ℃-70 ℃;
In second step, use NH
4OH: H
2O
2: H
2O=10: 1: 50 solution cleaned 5 minutes-10 minutes at 60 ℃-70 ℃; Last water cleans up.
In the manufacture method of the present invention, described laser crystallization technology uses wavelength to be 308nm XeCl excimer laser, by the control output power of laser, stepping rate and time, makes amorphous Si, Si
1-xGe
x, the SiC recrystallization forms crystallite, forms the Si of class monocrystalline even, Si
1-xGe
x, the SiC film.
In the manufacture method of the present invention, the PECVD hydrogenation process carries out hydrogenation treatment to film, with the stability of enhanced film material by adjusting volume ratio and the isoionic energy of hydrogen and nitrogen under 100 ℃ of-400 ℃ of temperature; The volume ratio of described hydrogen and nitrogen is that 10-100 (is hydrogen volume: nitrogen volume=10-100) doubly.
The present invention adopts PECVD or HD-PECVD (Plasma Enhanced Chemical VaporDeposition-high-density plasma enhanced chemical vapor deposition) thin film deposition processes, plasma doping technology, laser crystallization technology and hydrogenation process combine, successful preparation the Si of high-quality amorphous (A) and crystallite (μ c) and SiGe, SiC film.The energy gap width of these materials is as shown in table 1.
The Si of table 1 amorphous (A) and crystallite (μ c), the energy gap width of SiGe and SiC thin-film material
| Material | Energy gap width (ev) | Material | Energy gap width (ev) |
| A-Si 1-xGe x | 1.3-1.7 | μc-Si | ～1.2 |
| μc-Si 1-xGe x | 0.7-1.2 | A-SiC | ～2.1 |
| A-Si | ～1.7 | μc-SiC | ～1.8 |
Therefore, we can be made up the power spectrum of widening silicon-based thin film solar cell with six kinds of above-mentioned materials and be absorbed width, to improve the photoelectric conversion rate of silicon-based film solar cells.The absorption energy spectral limit of various materials as shown in Figure 1.
The method of the invention makes amorphous and crystallite Si, and SiGe and SiC film performance are as shown in table 2.
Table 2 amorphous and crystallite Si, SiGe and SiC film performance
| Technical parameter | a-Si 1-xGe x | ?mc-Si 1-xGe x | p，n-(a，μc)-SiC x |
| Darkroom conductance Ω-cm) -1 | ～10 -8 | ?＜10 -7 | ～10 -5-10 -6 |
| Activation energy | ～0.7 | ～0.5 | |
| Optical energy gap (eV) (300k) | 1.5-1.7 | ?～0.9 | 1.8-2.1 |
| Spin density (cm -3) | ＜10 17 | ?＜10 17 | |
| Ion migration velocity μ τ(cm 2/V) | ＞10 -7(600nm) | ?＞10 -7(600nm) | |
| Absorption coefficient (cm -1) | ＞10 3(800nm) | ?＞10 3(800nm) | ＞10 4(400nm) |
As known from the above, the present invention ties PIN solar cell and manufacture method thereof for a kind of high conversion silicon wafer and film composite type more, and the thin-film solar cells conversion efficiency of many knot series connection can reach 25-30%, and has stability preferably; The present invention adopts laser crystallization technology, the excessive layer process of plasma doping technology and PECVD improves the interface performance between each layer, reduce interface resistance and enhanced film material crystal property between each lamination, and keep the stable of layers of material performance and improve light transmittance and the conductivity at transparent conductive film material and interface with hydrogenation process.
Description of drawings
Fig. 1 describes amorphous, crystallite and crystalline silicon (Si), the power spectrum absorption region of the SiGe (SiGe) of amorphous and crystallite (or epitaxy single-crystal) and the carborundum (SiC) of amorphous and crystallite;
Fig. 2 is that high conversion silicon wafer and the film composite type of an embodiment of the present invention tied PIN solar cell film layer structure and preparation technology's schematic diagram more, and battery is that silicon wafer and film composite type are tied six layers of pin structural membrane of PIN solar cell unijunction solar cell more.
Embodiment
Embodiment 1: a kind of high conversion silicon wafer and film composite type are tied the PIN solar cell more, and structure is: hearth electrode/n-epi-Ge/i-gradient epi-Si
1-xGe
xReflector/n in the middle of the/p-epi-Si/
+Type silicon layer/n type silicon wafer/p
+Reflector/n-A-Si in the middle of type silicon layer/middle reflector/n-μ c-Si/i-μ c-Si/p-μ c-Si/
1-xGe
x/ i-gradient A-Si
1-xGe
xReflector in the middle of reflector in the middle of reflector in the middle of the/p-A-Si//n-A-Si/i-A-Si/p-A-Si//n-μ c-SiC/i-μ c-SiC/p-μ c-SiC//n-A-SiC/i-A-SiC/p-A-SiC/TCO-Al/ antireflective coating.
Embodiment 2: a kind of high conversion silicon wafer and film composite type are tied the preparation method of PIN solar cell more, may further comprise the steps:
1. n type silicon wafer (monocrystalline silicon piece or polysilicon chip) is carried out chemistry or machinery (CMP) twin polishing, then,
2. after n-type silicon wafer (monocrystalline silicon piece or polysilicon chip) being cleaned, n-type silicon wafer (monocrystalline silicon piece or polysilicon chip) is carried out P or B ion injection formation " n
+Type silicon layer/n type silicon wafer/p
+The type silicon layer " structure;
3. adopt PECVD to form Si oxide or the middle reflector of the TCO film of Silicon-rich;
4. in the front of n type silicon wafer (monocrystalline silicon piece or polysilicon chip), deposit boron (B) doped p-type Si with the CVD method,, i-gradient μ c or epi Si
1-xGe
xFilm and phosphorus (P) doped n type Ge, and with PVD method plating Al electrode;
5. at the reverse side of n type silicon wafer (monocrystalline silicon piece or polysilicon chip), use PECVD method sedimentary phosphor (P) doped n-μ c-Si film, I-μ c-Si film and boron (B) doped p-type μ c Si; Or with PECVD method deposited amorphous A-SiC film, laser crystallization is handled and is formed crystallite μ c-SiC film then, and uses the PECVD hydrogenation treatment;
6. form Si oxide or the middle reflector of the TCO film of Silicon-rich with the PECVD method;
7. use the amorphous n type A-Si of PECVD method sedimentary phosphor (P) doping
1-xGe
xFilm (1＞x＞0 is evenly excessively), I-A-Si
1-xGe
xFilm (1＞x＞0 is evenly excessively) and boron (B) doped p type A-Si film, and use the PECVD hydrogenation treatment;
8. form Si oxide or the middle reflector of the TCO film of Silicon-rich with the PECVD method;
9. use the amorphous n type A-Si film of PECVD method sedimentary phosphor (P) doping, I-A-Si film and boron (B) doped p type A-Si film, and use the PECVD hydrogenation treatment;
10. form Si oxide or the middle reflector of the TCO film of Silicon-rich with the PECVD method;
11. the crystallite n type μ c-SiC film with PECVD method sedimentary phosphor (P) doping, I-μ c-SiC film and boron (B) doped p type μ c-SiC film, or PECVD method deposited amorphous A-SiC film, laser crystallization is handled and is formed crystallite μ c-SiC film then, and uses the PECVD hydrogenation treatment;
12. form Si oxide or the middle reflector of the TCO film of Silicon-rich with the PECVD method;
13. with the amorphous n type A-SiC film that PECVD method sedimentary phosphor (P) mixes, I-A-SiC film and boron (B) doped p type A-SiC film, and use the PECVD hydrogenation treatment;
More than film in each correlation step also can deposit with the HD-PECVD method, and use the PECVD hydrogenation treatment;
14. prepare ZnO with the PVD method, ZnO:Ag and Al film (or prepare with sol-gel method), oven dry then, heat treatment 1 minute-10 minutes under 400 ℃, hydrogeneous atmosphere again; And with PVD method plating Al electrode;
15. with PVD or sol-gel method coated with antireflection film, can be porous SiO
2Or nanofiber SiO
2, SiO
2/ TiO
2Structure of composite membrane.
This high conversion silicon wafer and film composite type are tied the PIN conversion efficiency of solar cell more and are expected to reach 25%-30%, and have stability preferably.
In above-mentioned thin-film solar cells manufacturing process flow:
A. n type silicon wafer (monocrystalline silicon piece or polysilicon chip) is carried out chemistry and machinery (CMP) twin polishing;
B. n type silicon wafer (monocrystalline silicon piece or polysilicon chip) cleaning is carried out in two steps:
The first step is used HCl: H
2O
2: H
2O=10: 1: 50 solution cleaned 5 minutes-10 minutes down at 60 ℃-70 ℃;
In second step, use NH
4OH: H
2O
2: H
2O=10: 1: 50 solution cleaned 5 minutes-10 minutes down at 60 ℃-70 ℃, and last water cleans up;
C. laser crystallization treatment process: use wavelength to be 308nm XeCl excimer laser, by the control output power of laser, stepping rate and time, make amorphous Si, Si
1-xGe
x, the SiC recrystallization forms crystallite, forms the Si of class monocrystalline even, Si
1-xGe
x, the SiC film;
The d.PECVD hydrogenation process: by ratio (10-100 doubly) and the isoionic energy of adjusting hydrogen and nitrogen, (100 ℃-400 ℃) carry out hydrogenation treatment to film at a certain temperature, with the stability of enhanced film material.
Claims (13)
1. a silicon wafer and film composite type are tied the PIN solar cell more, it is characterized in that battery structure is as follows:
Hearth electrode/n-epi-Ge/ i-gradient epi-Si
1-xGe
x/ p-epi-Si/mix silicon oxide sio
XMiddle reflector/n
+-layer-n-type silicon wafer-p
+-layer/ mixes silicon oxide sio
XMiddle reflector/
N-mc-Si/ i-mc-Si/p-mc-Si/ mixes silicon oxide sio
XMiddle reflector/
N – A-Si/ i – A-Si/p – A-Si/TCO-Al/ nanofiber SiO
2Antireflective coating;
Wherein, the rete between the reflector is a knot between tco layer and the adjacent middle reflector and in the middle of adjacent two, and the used semi-conducting material of each rete is identical and form the pin knot because of the difference of mixing in every knot; 0≤x≤1; Interface between "/" expression is two-layer; N-represents N-type semiconductor, and i-represents intrinsic semiconductor, and P-represents P-type semiconductor; A-represents noncrystal, and mc-represents crystallite; n
+-layer-n-type silicon wafer-p
+-layer is illustrated in and carries out ion injection formation n on each face of n-type silicon wafer
+Type silicon layer and p
+Type silicon layer, i.e. n
+-layer-n-type silicon wafer-p
+The compound integrated morphology of-layer is mixed silicon oxide sio
XFor middle reflector, in application examples, silicon rich silicon oxide SiO
XAlso be used as middle reflector, nanofiber SiO
2Film is antireflective coating;
Wherein, epi refers to the epitaxial growth single crystalline layer; Gradient refers to Si
1-xGe
xValue by changing x is from 1 graded to 0 progressively, and Si
1-xGe
xThen from Ge germanium layer-gradient silicon germanide layer-change to Si layer, 0≤x≤1.
2. tie the PIN solar cell according to the described silicon wafer of claim 1 and film composite type more, it is characterized in that, its four knot silicon wafer and film composite type are tied the PIN solar cell more can increase by a knot
N – A-Si
1-xGe
x/ i – gradient A-Si
1-xGe
xIt is as follows that/p – A-Si becomes five knots: hearth electrode/n-epi-Ge/ i-gradient epi-Si
1-xGe
x/ p-epi-Si/mix silicon oxide sio
XMiddle reflector/n
+-layer-n-type silicon wafer-p
+-layer/ mixes silicon oxide sio
XMiddle reflector/
N-mc-Si/ i-mc-Si/p-mc-Si/ mixes silicon oxide sio
XMiddle reflector/
N – A-Si
1-xGe
x/ i – gradient A-Si
1-xGe
x/ p – A-Si/ mixes silicon oxide sio
XMiddle reflector/
N – A – Si/ i – A – Si/ p – A – Si/TCO-Al/ nanofiber SiO
2Antireflective coating.
3. tie the PIN solar cell according to the described silicon wafer of claim 2 and film composite type more, it is characterized in that, its five knot silicon wafer and film composite type are tied the PIN solar cell more can increase by a knot n-mc-SiC/ i-mc-SiC/ p-mc-SiC
It is as follows to become six knots: hearth electrode/n-epi-Ge/ i-gradient epi-Si
1-xGe
x/ p-epi-Si/mix silicon oxide sio
XMiddle reflector/n
+-layer-n-type silicon wafer-p
+-layer/ mixes silicon oxide sio
XMiddle reflector/
N-mc-Si/ i-mc-Si/p-mc-Si/ mixes silicon oxide sio
XMiddle reflector/
N – A-Si
1-xGe
x/ i – gradient A-Si
1-xGe
x/ p – A-Si/ mixes silicon oxide sio
XMiddle reflector/
N – A – Si/ i – A – Si/ p – A – Si/ mixes silicon oxide sio
XMiddle reflector/
N-mc-SiC/ i-mc-SiC/ p-mc-SiC/ TCO-Al/ nanofiber SiO
2Antireflective coating.
4. tie the PIN solar cell according to the described silicon wafer of claim 3 and film composite type more, it is characterized in that, its six knot silicon wafer and film composite type are tied the PIN solar cell more can increase by a knot n-A-SiC/ i-A-SiC/ p-A-SiC
It is as follows to become seven knots: hearth electrode/n-epi-Ge/ i-gradient epi-Si
1-xGe
x/ p-epi-Si/mix silicon oxide sio
XMiddle reflector/n
+-layer-n-type silicon wafer-p
+-layer/ mixes silicon oxide sio
XMiddle reflector/
N-mc-Si/ i-mc-Si/p-mc-Si/ mixes silicon oxide sio
XMiddle reflector/
N – A-Si
1-xGe
x/ i – gradient A-Si
1-xGe
x/ p – A-Si/ mixes silicon oxide sio
XMiddle reflector/
N – A – Si/ i – A – Si/ p – A – Si/ mixes silicon oxide sio
XMiddle reflector/
N-mc-SiC/ i-mc-SiC/ p-mc-SiC/ mixes silicon oxide sio
XMiddle reflector/n-A-SiC/ i-A-SiC/ p-A-SiC/TCO-Al/ nanofiber SiO
2Antireflective coating.
5. tie the PIN solar cell according to the described silicon wafer of claim 4 and film composite type more, it is characterized in that, its seven knot silicon wafer and film composite type are tied the knot of one in PIN solar cell n-epi-Ge/ i-gradient epi-Si more
1-xGe
x/ p-epi-Si n-epi-Ge//i-epi-Ge/ p-epi-Ge and n-gradient epi-Si
1-xGe
x/ i-gradient epi-Si
1-xGe
x/ p-gradient epi-Si
1-xGe
xSubstitute
It is as follows to become eight knots: hearth electrode/n-epi-Ge//i-epi-Ge/ p-epi-Ge/ mixes silicon oxide sio
XMiddle reflector/n-gradient epi-Si
1-xGe
x/ i-gradient epi-Si
1-xGe
x/ p-gradient epi-Si
1-xGe
x/ mix silicon oxide sio
XMiddle reflector/n
+-layer-n-type silicon wafer-p
+-layer/ mixes silicon oxide sio
XMiddle reflector/
N-mc-Si/ i-mc-Si/p-mc-Si/ mixes silicon oxide sio
XMiddle reflector/
N – A-Si
1-xGe
x/ i – gradient A-Si
1-xGe
x/ p – A-Si/ mixes silicon oxide sio
XMiddle reflector/
N – A – Si/ i – A – Si/ p – A – Si/ mixes silicon oxide sio
XMiddle reflector/
N-mc-SiC/ i-mc-SiC/ p-mc-SiC/ mixes silicon oxide sio
XMiddle reflector/n-A-SiC/ i-A-SiC/ p-A-SiC/TCO-Al/ nanofiber SiO
2Antireflective coating.
6. tie the PIN solar cell according to the described silicon wafer of one of claim 1-5 and film composite type more, it is characterized in that, described silicon wafer can be monocrystalline silicon piece or polysilicon chip.
7. tie the PIN solar cell according to the described silicon wafer of one of claim 1-5 and film composite type more, it is characterized in that, described antireflective coating is nanofiber SiO
2Select the nanofiber SiO of fibre diameter 50 nm-500 nm, draw ratio 1:5-1:10 for use
2Described antireflective coating can be used porous SiO
2Film, and SiO
2/ TiO
2Composite membrane; Described porous SiO
2Film is selected porosity 10%-50% for use, the porous SiO of aperture 50 nm-1000 nm
2The film product; Described SiO
2/ TiO
2Composite membrane is the compound or MULTILAYER COMPOSITE of individual layer.
8. tie the PIN solar cell according to the described silicon wafer of one of claim 1-5 and film composite type more, it is characterized in that, described TCO-Al is the electrically conducting transparent aluminum oxide film, and purity is more than 99.9%, and visible light transmissivity is greater than 90%; Resistivity is less than 1 * 10
-3Ohmcm, film thickness 50 nm-5000 nm.
9. tie the PIN solar cell according to the described silicon wafer of one of claim 1-5 and film composite type more, it is characterized in that, described middle reflector is for mixing silicon oxide sio
XWith silicon rich silicon oxide SiO
XConductive film layer, its material purity are greater than 99.9%, and resistivity is less than 1 x 10
-3Ohmcm, film thickness 50 nm-5000 nm.
10. tie the PIN solar cell according to the described silicon wafer of claim 1 and film composite type more, it is characterized in that, described in the middle of the reflector be the rete with satisfactory electrical conductivity, the ZnO that it can also mix with Ag or Al, Ga
X, here, Ag, Al, Ga only are the Erbium-doped foreign material, and SiN
X, the ITO material makes, and with PVD or PECVD, or colloidal sol, the gel method preparation.
11. tie the manufacture method of PIN solar cell as silicon wafer as described in one of claim 1-5 and film composite type more for one kind, it is characterized in that it comprises:
N type silicon wafer is carried out chemistry or mechanical twin polishing; Then,
N type silicon wafer is cleaned; Then,
N-type silicon wafer is carried out ion inject, form n
+Type silicon layer/n type silicon wafer/p
+The structure of type silicon layer;
Prepare tco layer, antireflective coating with common process;
Adopt PECVD, the CVD depositing operation, laser crystallization technology, plasma doping technology and HD-PECVD prepare silica-base film, obtaining high-quality rete and to reduce interface resistance between each lamination, wherein:
The amorphous silicon membrane of described silica-base film or microcrystalline silicon film adopt the PECVD method, use high purity silane, and hydrogen is carrier gas, decompose deposition and form; The amorphous of described silica-base film or crystallite Si
1-xGe
xFilm adopts SiH
4And GeH
4Be reaction precursor, H
2Be carrier gas, the reaction decomposes deposition forms; The amorphous of described silica-base film or crystallite SiC film adopt SiH
4And CH
4Be reaction precursor, H
2Be carrier gas, the reaction decomposes deposition forms; The reflector film adopts SiH in the middle of the Si oxide of the Silicon-rich of described silica-base film
4And NO
2Be reaction precursor, H
2Be carrier gas, the reaction decomposes deposition forms;
Described PECVD depositing temperature is 200 –, 400 C;
Or with HD-PECVD technology substitute PECVD, the CVD depositing operation prepares described silica-base film;
The N-type silica-base film of described silica-base film adopts PH
3Plasma doping and forming, P-type silica-base film adopts B
2H
6Plasma doping and forming;
The Si of described silica-base film
1-xGe
xSingle crystal epitaxial film adopt the CVD deposition
Technology is used SiH
4And GeH
4Be reaction precursor, H
2Be carrier gas, reaction temperature is that 600 –, 1000 C deposit;
It is 308 nm XeCl excimer laser that described laser crystallization technology is used wavelength, by the control output power of laser, stepping rate and time, makes amorphous Si, Si
1-xGe
x, the SiC recrystallization forms crystallite, and part forms the Si of class monocrystalline, Si
1-xGe
x, the SiC film.
12. tie the manufacture method of PIN solar cell according to the described silicon wafer of claim 11 and film composite type more, it is characterized in that,
Described n type silicon wafer is cleaned in two steps carried out:
The first step is used HCl:H
2O
2: H
2The solution of O=10:1:50 cleaned 5 minutes-10 minutes at 60 ℃-70 ℃;
In second step, use NH
4OH:H
2O
2: H
2The solution of O=10:1:50 cleaned 5 minutes-10 minutes for 70 ℃ at 60 ℃ –; Last water cleans up.
13. tie the manufacture method of PIN solar cell according to the described silicon wafer of claim 11 and film composite type more, it is characterized in that,
The PECVD hydrogenation process carries out hydrogenation treatment to film, with the stability of enhanced film material by adjusting volume ratio and the isoionic energy of hydrogen and nitrogen under 100 ℃ of-400 ℃ of temperature; The volume ratio of described hydrogen and nitrogen is 10-100.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910044771XA CN101820007B (en) | 2009-11-18 | 2009-11-18 | High-conversion rate silicon and thin film compound type multijunction PIN solar cell and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910044771XA CN101820007B (en) | 2009-11-18 | 2009-11-18 | High-conversion rate silicon and thin film compound type multijunction PIN solar cell and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101820007A CN101820007A (en) | 2010-09-01 |
| CN101820007B true CN101820007B (en) | 2013-08-07 |
Family
ID=42655021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910044771XA Active CN101820007B (en) | 2009-11-18 | 2009-11-18 | High-conversion rate silicon and thin film compound type multijunction PIN solar cell and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101820007B (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013004188A1 (en) * | 2011-07-07 | 2013-01-10 | 厦门市三安光电科技有限公司 | Solar cell, system, and manufacturing method thereof |
| WO2013034537A2 (en) * | 2011-09-06 | 2013-03-14 | Oerlikon Solar Ag, Truebbach | Method of manufacturing an intermediate reflector layer |
| CN102520470B (en) * | 2011-12-19 | 2014-06-25 | 同济大学 | Duralumin/silicon carbide extreme ultraviolet multilayer reflector and manufacturing method for the same |
| CN103579403A (en) * | 2012-08-07 | 2014-02-12 | 江苏武进汉能光伏有限公司 | Silicon-film three-stacking-layer solar cell |
| CN102938430B (en) * | 2012-12-07 | 2016-12-21 | 上海空间电源研究所 | Comprise the silica-based many knot stacked solar cell, cascade solar cells of flexible substrate and the manufacture method thereof in intermediate layer |
| CN103872167B (en) * | 2012-12-18 | 2017-02-08 | 北京汉能创昱科技有限公司 | Silicon-based thin-film solar battery and preparation method thereof |
| CN103247720B (en) * | 2013-05-10 | 2015-12-09 | 苏州阿特斯阳光电力科技有限公司 | A kind of preparation method of silicon/crystalline silicon heterogenous joint solar cell |
| CN103337549A (en) * | 2013-07-03 | 2013-10-02 | 黑龙江汉能薄膜太阳能有限公司 | Novel four-laminated non-crystallite germanium-silicon thin film solar battery and preparation method thereof |
| CN103579400B (en) * | 2013-11-06 | 2016-08-24 | 湖南共创光伏科技有限公司 | A kind of battery compound central reflector layer and many knot many laminated silicon-base films batteries |
| CN104409553B (en) * | 2014-11-04 | 2017-09-08 | 中国科学院半导体研究所 | Carborundum Intermediate Gray solar cell and preparation method thereof |
| CN104716220B (en) * | 2015-02-10 | 2017-08-04 | 湖南共创光伏科技有限公司 | A kind of solar cell and method for making up the thin-film solar cells crystallite defect silicon for tying many laminations more |
| CN104779309B (en) * | 2015-04-14 | 2018-05-18 | 湖南共创光伏科技有限公司 | Silicon-based film solar cells and its manufacturing method with gradient-structure |
| CN106784146A (en) * | 2016-12-26 | 2017-05-31 | 济南大学 | A kind of methylamine lead iodine/gap tunable amorphous silicon germanium stacked thin film batteries package technique |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4891074A (en) * | 1980-11-13 | 1990-01-02 | Energy Conversion Devices, Inc. | Multiple cell photoresponsive amorphous alloys and devices |
| CN101246927A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Photovoltaic application of amorphous germanium thin film |
| CN101383385A (en) * | 2008-09-27 | 2009-03-11 | 中国科学院上海微系统与信息技术研究所 | Gap tunable triple thin-film solar cell and preparation thereof |
| CN101431110A (en) * | 2008-10-06 | 2009-05-13 | 上海电力学院 | Nano-material anti-reflection film with low refractive index |
-
2009
- 2009-11-18 CN CN200910044771XA patent/CN101820007B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4891074A (en) * | 1980-11-13 | 1990-01-02 | Energy Conversion Devices, Inc. | Multiple cell photoresponsive amorphous alloys and devices |
| CN101246927A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Photovoltaic application of amorphous germanium thin film |
| CN101383385A (en) * | 2008-09-27 | 2009-03-11 | 中国科学院上海微系统与信息技术研究所 | Gap tunable triple thin-film solar cell and preparation thereof |
| CN101431110A (en) * | 2008-10-06 | 2009-05-13 | 上海电力学院 | Nano-material anti-reflection film with low refractive index |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101820007A (en) | 2010-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101820007B (en) | High-conversion rate silicon and thin film compound type multijunction PIN solar cell and manufacturing method thereof | |
| CN101866963B (en) | Silicon-based multijunction multi-laminated PIN thin film solar cell with high conversion rate and production method thereof | |
| Xiao et al. | High-efficiency silicon solar cells—materials and devices physics | |
| Schropp et al. | Amorphous silicon, microcrystalline silicon, and thin-film polycrystalline silicon solar cells | |
| CN104851931B (en) | Cadmium telluride diaphragm solar battery and its manufacture method with gradient-structure | |
| CN103000742A (en) | Solar battery with band gap gradual changing silicon quantum dot multilayer film and production method thereof | |
| CN101820006B (en) | High-conversion rate silicon-based unijunction multi-laminate PIN thin-film solar cell and manufacturing method thereof | |
| CN101728458B (en) | Preparation method of multi-junction solar cell | |
| CN101894871B (en) | High-conversion rate silicon crystal and thin film compound type unijunction PIN (Positive Intrinsic-Negative) solar battery and manufacturing method thereof | |
| CN104766896B (en) | A kind of copper-indium-galliun-selenium film solar cell with gradient-structure and preparation method thereof | |
| CN102157617B (en) | Preparation method of silicon-based nano-wire solar cell | |
| CN104733548B (en) | There is silicon-based film solar cells and its manufacture method of quantum well structure | |
| CN106449850B (en) | A kind of efficient silicon based hetero-junction double-side cell and preparation method thereof | |
| CN104505419B (en) | Crystal silicon and silicon carbide film compound unijunction PIN solar battery with transition layer, and preparation method thereof | |
| CN204668317U (en) | There is the silicon-based film solar cells of gradient-structure | |
| CN104576801B (en) | Compound unijunction PIN solar cells of crystal silicon and silicon thin film with transition zone and preparation method thereof | |
| CN101459206A (en) | Manufacturing process for high-efficiency multi-junction solar cell | |
| CN204668332U (en) | There is the cadmium telluride diaphragm solar battery of gradient-structure | |
| Alami et al. | Second-generation photovoltaics: thin-film technologies | |
| CN104505418B (en) | Compound unijunction PIN solar cells of crystal silicon and silicon Germanium films with transition zone and preparation method thereof | |
| CN108172644B (en) | A kind of preparation method of phosphorus doping cadmium telluride diaphragm solar battery | |
| CN204424275U (en) | There is the cadmium telluride diaphragm solar battery of quantum well structure | |
| CN101777592B (en) | Heavily-doped UMG silicon epitaxially generated high-low junction-based solar cell and preparation method | |
| Arya et al. | Silicon-Based Solar Cells | |
| CN204424272U (en) | There is the silicon-based film solar cells of quantum well structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |