CN101784328A - Be used for removing the method and apparatus of at least a hydrogen chalcogen compound from waste gas stream - Google Patents
Be used for removing the method and apparatus of at least a hydrogen chalcogen compound from waste gas stream Download PDFInfo
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- CN101784328A CN101784328A CN200880103862A CN200880103862A CN101784328A CN 101784328 A CN101784328 A CN 101784328A CN 200880103862 A CN200880103862 A CN 200880103862A CN 200880103862 A CN200880103862 A CN 200880103862A CN 101784328 A CN101784328 A CN 101784328A
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- aqueous solution
- waste gas
- alkali
- chalcogen compound
- hydrogen
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- 238000000034 method Methods 0.000 title claims abstract description 58
- 239000001257 hydrogen Substances 0.000 title claims abstract description 36
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 36
- -1 hydrogen chalcogen compound Chemical class 0.000 title claims abstract description 34
- 239000002912 waste gas Substances 0.000 title claims abstract description 34
- 239000007864 aqueous solution Substances 0.000 claims abstract description 55
- 239000007789 gas Substances 0.000 claims abstract description 32
- 239000003513 alkali Substances 0.000 claims abstract description 28
- 230000008569 process Effects 0.000 claims abstract description 23
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000000243 solution Substances 0.000 claims abstract description 10
- 239000011669 selenium Substances 0.000 claims abstract description 9
- 150000001875 compounds Chemical class 0.000 claims abstract description 8
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000005864 Sulphur Substances 0.000 claims abstract description 5
- 229910052699 polonium Inorganic materials 0.000 claims abstract description 4
- HZEBHPIOVYHPMT-UHFFFAOYSA-N polonium atom Chemical compound [Po] HZEBHPIOVYHPMT-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 45
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims description 2
- 238000011084 recovery Methods 0.000 claims description 2
- 230000006872 improvement Effects 0.000 description 11
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 8
- 241000009298 Trigla lyra Species 0.000 description 7
- 229910000058 selane Inorganic materials 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- 239000011734 sodium Substances 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 229910052798 chalcogen Inorganic materials 0.000 description 3
- 230000003134 recirculating effect Effects 0.000 description 3
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- 150000001787 chalcogens Chemical class 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- HYHCSLBZRBJJCH-UHFFFAOYSA-M sodium hydrosulfide Chemical compound [Na+].[SH-] HYHCSLBZRBJJCH-UHFFFAOYSA-M 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910019093 NaOCl Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 150000001786 chalcogen compounds Chemical class 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 230000027555 hydrotropism Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 231100000167 toxic agent Toxicity 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/46—Removing components of defined structure
- B01D53/48—Sulfur compounds
- B01D53/52—Hydrogen sulfide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/46—Removing components of defined structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/46—Removing components of defined structure
- B01D53/64—Heavy metals or compounds thereof, e.g. mercury
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Biomedical Technology (AREA)
- Environmental & Geological Engineering (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Gas Separation By Absorption (AREA)
- Treating Waste Gases (AREA)
Abstract
Be used for purifying the method for the waste gas or the process gas of semiconductor element manufacture process, wherein waste gas or process gas comprise at least a hydrogen chalcogen compound, and described hydrogen chalcogen compound comprises following at least a: a) sulphur (S); B) selenium (Se); C) tellurium (Te); And d) polonium (Po), wherein in wet scrubber the aqueous solution by process gas being imported at least a alkali, supply with at least a alkali and from the aqueous solution, extract output waste gas stream to the aqueous solution described hydrogen chalcogen compound is removed from process gas, the amount that it is characterized in that controlling the alkali of supplying with makes the pH value of solution greater than 12.Can from the waste gas of semiconducting compound, remove hydrogen chalcogen compound effectively according to equipment of the present invention (1) and method as the production process of for example photovoltaic module.
Description
Theme of the present invention be used for from the input air-flow remove at least a under standard conditions the method and apparatus for the hydrogen chalcogen compound of gaseous state (hydrogen chalcogen compound).Preferred use of the present invention field is waste gas or the product gas that is used for purifying wafer and/or semiconductor production such as manufacture of solar cells.
Producing wafer, especially when producing solar energy module, usually with product gas as for example hydrogen sulfide (H
2S) or hydrogen selenide (H
2Se) as the product gas that donor ion is provided to the wafer substrate.The waste gas in such production place of production comprises the toxic compounds that must remove as for example hydrogen sulfide or hydrogen selenide.Usually, comprise the waste gas of hydrogen sulfide and/or hydrogen selenide to be added with oxidant such as hydrogen peroxide (H
2O
2) and/or the caustic solution of clorox (NaOCl) handle as for example NaOH (NaOH).These oxidants pass through Na
2S is converted into sodium sulphate (Na
2SO
4) transform a kind of product (vulcanized sodium (Na for example of hydrogen sulfide and NaOH (NaOH) reaction
2S)).
This means in order from the waste gas of production plant, to remove these hydrogen chalcogen compounds and must use and store some chemicals, as for example NaOH, hydrogen peroxide and/or clorox.Compound particularly oxidant such as hydrogen peroxide must the formation of considering oxygen for example and jar may corrosion aspect controlled condition under store.In addition, must supervise the raw material of some compounds.And by stock and the increase of consequent expense.
Based on this point, the objective of the invention is to solve prior art problems, particularly aspect the less kind chemicals of use to small part.
These purposes realize by the method and apparatus with the described feature of independent claims.Corresponding dependent claims relates to the improvement of method and apparatus.
Be used to purify the method for the waste gas or the process gas of semiconductor element manufacture process, wherein said waste gas or process gas comprise at least a hydrogen chalcogen compound, and described hydrogen chalcogen compound comprises following at least a:
A) sulphur (S);
B) selenium (Se);
C) tellurium (Te); And
D) polonium (Po),
Wherein in wet scrubber, from process gas, remove described hydrogen chalcogen compound by following steps:
-process gas is imported the aqueous solution of at least a alkali;
-should be supplied to the aqueous solution by at least a alkali, and
-extracting output waste gas from the aqueous solution flows.
The amount of controlling the alkali of supplying with according to the present invention makes the pH value of solution greater than 12.
If use the terminology standard condition in this article, should be appreciated that then standard conditions are standard ambient temperature and pressure as for example 298, the temperature of 15K (Kelvin) and the pressure of 1bar.Should be appreciated that chalcogen is the element of periodic table the 16th family in the periodic table of elements (being VIA family in the past).Chalcogen and family thereof are made up of elemental oxygen, sulphur, selenium, tellurium, polonium and unuhexium particularly.Term " hydrogen chalcogen compound " is understood so particularly: it comprises hydrogen sulfide, hydrogen selenide and/or hydrotelluric acid.Hydrogen chalcogen compound is chalcogenide particularly.It under the standard conditions hydrogen chalcogen compound hydrogen chalcogen of all except the water thing particularly of gaseous state.
The method according to this invention is particularly carried out in so-called wet scrubber.Particularly, by with cleaning solution spray input waste gas stream, by forcing gas to pass the washing liquid pool or will import waste gas by other contact method and flow with the aqueous solution that comprises alkali and contact as cleaning solution.Preferably force input waste gas stream to pass water-soluble liquid pool.
For example, hydrogen chalcogen compound hydrogen sulfide (H
2S) chemical reaction is as follows:
H
2S+NaOH→NaHS+H
2O (2.1)
NaHS+NaOH→Na
2S+H
2O pH＞11?(2.2)
The pH value is followed equation (2.1) and (2.2) greater than 11 o'clock chemical reactions, and the pH value is followed equation (1.1) and (1.2) less than reaction in 11 o'clock.The response class of each other hydrogen chalcogen compound seemingly.If find that when controlling pH value of aqueous solution pH value is greater than 12 then react (2.1) and fully suppressed according to the present invention.Therefore can not add other compound such as oxidant back reaction with inhibitory reaction (2.1).This means and only use a kind of compound from input waste gas stream, to remove hydrogen chalcogen compound fully as alkali such as NaOH.Removing hydrogen chalcogen compound fully is interpreted as and removes from input waste gas stream that (hydrogen chalcogen compound of weight-%) particularly surpasses 99.9wt.-% or even surpasses 99.99wt.-% above 99wt.-%.Do not need the stock that keeps the stock and control other chemicals such as oxidant.When this method of use, make the easy and reduction expense of process transfiguration of from input waste gas stream, removing hydrogen chalcogen compound.
The method according to this invention is particularly conducive to removes the hydrogen compound with a kind of above-mentioned element.Particularly, remove hydrogen sulfide and hydrogen selenide with the very high degree of removing, described hydrogen sulfide and hydrogen selenide are usually as the sulphur of process gas and the hydrogen chalcogen compound of selenium in semi-conductor industry.
According to the improvement of the inventive method, the aqueous solution is carbonate containing not.
Carbonate containing can not understood particularly like this: carbonate is not introduced the aqueous solution.
According to the further improvement of the inventive method, the supply of control alkali makes environment PH greater than 13.
PH value in the aqueous environments is reached consistently up to more than 13, because this causes the extra high degree of removing of hydrogen chalcogen compound.
According to the further improvement of the inventive method, alkali comprises at least a following compound:
A) NaOH (NaOH), and
B) potassium hydroxide (KOH).
These alkali particularly NaOH can be controlled at greater than 13 particularly greater than 13.5 the pH value.The mixture of these alkali and particularly at least two kinds of these alkali can easily be removed hydrogen chalcogen compound fully from input waste gas stream.
According to further improvement, make aqueous solution circulation.
This means that partially aqueous solution removes and introduced in the remaining aqueous solution more after a while from remaining aqueous solution.
According to further improvement of the present invention, loop solution to small part is introduced into as drop.
This can introduce drop by using each nozzle.Especially preferably introduce loop solution in the mode of the good mixability that obtains alkali and remaining aqueous solution.
According to further improvement of the present invention, introduce the drop of at least two kinds of diameters.
Two stages of preferred branch are supplied with the aqueous solution.Can introduce the drop of first diameter and introduce second the drop in the phase I than minor diameter in second stage subsequently.Big drop can the quite a large amount of alkali of hydrotropism's environmental supply, if partly comparing the pH value from the remaining aqueous solution aqueous solution of removing and the remaining aqueous solution of introducing this aqueous solution of removing increases, then the pH value may increase considerably, and evenly mixes with aqueous environments than droplet.
According to further improvement of the present invention,
-recovery section the aqueous solution;
The pH value of this partially aqueous solution of-measurement;
-based on this pH value, a certain amount of alkali is added in the partially aqueous solution; And
-partially aqueous solution is recycled in the remaining aqueous solution.
Only before partially aqueous solution is recycled to remaining aqueous solution, alkali introduced this partially aqueous solution and can control the pH value highly stablely.
According to the further improvement of the inventive method, will wrap oxygen containing gas and be introduced in the aqueous environments.
Should be appreciated that the oxygen containing gas of bag can be surrounding air, pure oxygen or oxygen and at least a other gas mixture as for example nitrogen.Improved removing of hydrogen selenide especially by introducing oxygen, because oxygen promotes that hydrogen selenide is oxidized to red unformed selenium.The introducing of wrapping oxygen containing gas can not depended on the introducing of alkali and realize.
According to a further aspect in the invention, propose to use comprise at least a under standard conditions the method as the process gas manufacturing semiconductor element of the hydrogen chalcogen compound of gaseous state, wherein remove the hydrogen chalcogen compound of process gas with the method according to this invention.
Semiconductor element specifically comprises wafer, photovoltage circuit and/or thin film photovoltaic circuit.
According to a further aspect in the invention, proposition is used for purifying the waste gas of the semiconductor element manufacture process that flows from input waste gas or the equipment of process gas, it comprises the wet scrubber unit that is used for aqueous environments, and described wet scrubber unit comprises that the pH value that is used for aqueous environments is controlled at the device greater than 12 level.This equipment can the method according to this invention concrete operations.
According to the improvement of present device, this equipment also comprises at least one pH sensor and is used for aqueous slkali is quantitatively given the pump of the aqueous solution.
According to the further improvement of present device, the device that is used for the controlled supply of at least a alkali comprises at least one nozzle.
Disclosed detailed content and advantage according to the inventive method can be changed and make it to be suitable for equipment of the present invention, and vice versa.Further describe the present invention below by embodiment and with reference to the unique accompanying drawing that schematically shows present device.
Only accompanying drawing schematically shows and is used for removing under standard conditions equipment 1 for the hydrogen chalcogen compound of gaseous state from input waste gas stream.This equipment 1 can be understood that wet scrubber.Input waste gas stream reaches first clean room 4 at exhaust gas entrance 2 access arrangements 1 and via exhaust gas entrance pipeline 3.In this first clean room 4, introduce the aqueous solution that comprises at least a alkali via first nozzle 5.First clean room 4 and second clean room 6 comprise aqueous environments, to wherein introducing input waste gas stream.Designing first nozzle 5 makes it particularly provide quite a large amount of aqueous solution with the drop form.
The aqueous solution is circulated in equipment 1 and reach second clean room 6 from first clean room 4.In second clean room 6, introduce the aqueous solution that comprises at least a alkali such as NaOH via some second nozzles 7, and Already in second clean room 6, described second nozzle 7 can be than first nozzle, 5 less amount metering feed for the more homogeneous mixture of the alkali that adds via second nozzle 7 and aqueous environments.
By behind second clean room 6, make it enter the 3rd clean room 8 that comprises packed bed reactor 9 at the aqueous solution that comprises waste gas.Via the 3rd nozzle 10 aqueous solution is introduced the 3rd clean room 8.
The aqueous solution of introducing via the 3rd nozzle 10 flows through the packed bed reactor 9 that comprises a parts, and described bed parts preferably are made of plastics, and particularly have high surface area as for example plastics of pearl, ring and/or ball.Particularly can be advantageously used in packed bed reactor 9 with the parts of sale such as trade name Pall rings, Ralu rings, Raschigrings, berl saddles by Raschig AG for example.
In the storage tank 11 of the 3rd clean room 8, collect the aqueous solution then.Use circulating pump 12 from storage tank 11, to extract the aqueous solution out.This circulating pump 12 that is arranged in recirculating line 13 is kept the aqueous solution and is flow through clean room 4,6,8 and by this system the aqueous solution is supplied to nozzle 5,7,10 in supply line system 14.Produce pressure differential by recirculating line 13 and circulating pump 12 in supply line system 14, this pressure differential is ordered about the aqueous solution and is flow through control piper 15, and described control piper 15 is included in the pH sensor 16 of control piper 15 inner control pH value of water solution.PH sensor 16 is connected and is used to control the pH value with device 17.These devices 17 are connected the sodium hydroxide solution metering that is used for from holder 19 again give control piper 15 with measuring pump 18.Can pH value of aqueous solution be controlled at greater than 12.5 according to the present invention thus, particularly greater than 13.
But control piper 15 also comprises current limiter 20 and is used for flow restriction with control piper 15 for being lower than the preset upper limit value.Equipment 1 also comprises plurality of valves 21, and it can be used to control the aqueous solution flow by equipment 1.Purified waste gas is flowed through and is discharged from equipment by export pipeline 22.Via discharge pipe 23 emptying storage tanks 11.
Can from the waste gas of semiconducting compound, remove hydrogen chalcogen compound effectively according to equipment 1 of the present invention and method as for example photovoltaic module production process.
Description of reference numerals
1 is used for removing from waste gas the equipment of hydrogen chalcogen compound
2 exhaust gas entrances
3 exhaust gas entrance pipelines
4 first clean rooms
5 first nozzles
6 second clean rooms
7 second nozzles
8 the 3rd clean rooms
9 packed bed reactors
10 the 3rd nozzles
11 storage tanks
12 circulating pumps
13 recirculating lines
14 supply line systems
15 control pipers
16 pH sensors
17 are used to control the device of pH value
18 measuring pumps
19 holders
20 current limiters
21 valves
22 export pipelines
23 discharge pipes
Claims (12)
1. be used to purify the method for the waste gas or the process gas of semiconductor element manufacture process, wherein said waste gas or process gas comprise at least a hydrogen chalcogen compound, and described hydrogen chalcogen compound comprises following at least a:
A) sulphur (S);
B) selenium (Se);
C) tellurium (Te); And
D) polonium (Po),
Wherein in wet scrubber, remove described hydrogen chalcogen compound from process gas by following steps:
-process gas is imported in the aqueous solution of at least a alkali;
-at least a alkali is supplied to the aqueous solution, and
-extracting output waste gas from the aqueous solution flows,
It is characterized in that the amount of the control alkali of supplying with makes the pH value of solution greater than 12.
2. method according to claim 1, the wherein said aqueous solution does not conform to carbonate.
3. according to each described method of aforementioned claim, the supply of wherein controlling alkali makes environment PH greater than 13.
4. according to each described method of aforementioned claim, wherein said alkali comprises at least a following compound:
A) NaOH (NaOH), and
B) potassium hydroxide (KOH).
5. according to each described method of aforementioned claim, wherein make described aqueous solution circulation.
6. method according to claim 5, wherein Xun Huan the aqueous solution to small part is introduced as drop.
7. method according to claim 6, the wherein drop of at least two kinds of diameters of introducing.
8. according to each described method of aforementioned claim, wherein
-recovery section the aqueous solution;
The pH value of this partially aqueous solution of-measurement;
-based on this pH value, a certain amount of alkali is added in this partially aqueous solution; And
-subsequently this partially aqueous solution is recycled in the remaining aqueous solution.
9. according to each described method of aforementioned claim, wherein will wrap oxygen containing gas and be introduced in the aqueous environments.
10. use the process gas that comprises at least a hydrogen chalcogen compound to make the method for semiconductor element, the hydrogen chalcogen compound of wherein said process gas is removed with each described method of aforementioned claim.
11. equipment (1), it is used for purifying according to each described method of claim 1-10 the waste gas or the process gas of the semiconductor element manufacture process that flows from input waste gas, described equipment (1) comprises the wet scrubber unit that is used for aqueous environments, it is characterized in that being used for pH value with aqueous environments and is controlled at device (17) greater than 12 level.
12. equipment according to claim 11 (1), it also comprises at least one pH sensor (16) and is used for the aqueous slkali metering is given the pump (18) of the aqueous solution.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP07115443A EP2030670A1 (en) | 2007-08-31 | 2007-08-31 | Method and apparatus for removing at least one hydrogen chalcogen compound from an exhaust gas stream |
| EP07115443.9 | 2007-08-31 | ||
| PCT/EP2008/061445 WO2009027534A1 (en) | 2007-08-31 | 2008-08-29 | Method and apparatus for removing at least one hydrogen chalcogen compound from an exhaust gas stream |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101784328A true CN101784328A (en) | 2010-07-21 |
Family
ID=39029081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880103862A Pending CN101784328A (en) | 2007-08-31 | 2008-08-29 | Be used for removing the method and apparatus of at least a hydrogen chalcogen compound from waste gas stream |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20110038773A1 (en) |
| EP (1) | EP2030670A1 (en) |
| JP (1) | JP2010537800A (en) |
| CN (1) | CN101784328A (en) |
| WO (1) | WO2009027534A1 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3339844A1 (en) * | 1983-05-17 | 1984-11-22 | Johann Dipl.-Ing. 6903 Neckargemünd Renneberg | Apparatus and process for the absorption of gases and vapours |
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|---|---|---|---|---|
| JPS513393A (en) * | 1974-06-29 | 1976-01-12 | Nippon Kokan Kk | Ryukasuisoo jokyosuru hoho |
| JPS5949822A (en) * | 1982-09-14 | 1984-03-22 | Nippon Sanso Kk | Treatment of gas comtaining volatile inorganic hydride or the like |
| JPS60175522A (en) * | 1984-02-23 | 1985-09-09 | World Giken:Kk | Composition for treating waste gas during semiconductor manufacturing process |
| JPS61204022A (en) * | 1985-02-12 | 1986-09-10 | Taiyo Sanso Kk | Method and apparatus for removing acid content contained in gas |
| US4922439A (en) * | 1987-05-20 | 1990-05-01 | Nathan Greenblatt | Operational system for travel agents |
| DE3839153C2 (en) * | 1988-11-17 | 1993-10-28 | Werner Dipl Chem Fabian | Process for the detoxification of process gases during plasma chemical etching |
| JPH06238124A (en) * | 1993-02-16 | 1994-08-30 | Teijin Chem Ltd | Removing method of harmful gas |
| SE9300533L (en) * | 1993-02-18 | 1994-08-19 | Flaekt Ab | Methods and apparatus for the absorption of hydrogen sulphide |
| CA2112077C (en) * | 1993-09-15 | 1999-08-24 | Barry Craig Smith | Network architecture for allocating flight inventory segments and resources |
| JPH09173764A (en) * | 1995-12-22 | 1997-07-08 | Babcock Hitachi Kk | Wet flue gas desulfurizer and method thereof |
| US5897620A (en) * | 1997-07-08 | 1999-04-27 | Priceline.Com Inc. | Method and apparatus for the sale of airline-specified flight tickets |
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-
2007
- 2007-08-31 EP EP07115443A patent/EP2030670A1/en not_active Ceased
-
2008
- 2008-08-29 US US12/675,617 patent/US20110038773A1/en not_active Abandoned
- 2008-08-29 WO PCT/EP2008/061445 patent/WO2009027534A1/en active Application Filing
- 2008-08-29 JP JP2010522400A patent/JP2010537800A/en active Pending
- 2008-08-29 CN CN200880103862A patent/CN101784328A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3339844A1 (en) * | 1983-05-17 | 1984-11-22 | Johann Dipl.-Ing. 6903 Neckargemünd Renneberg | Apparatus and process for the absorption of gases and vapours |
Non-Patent Citations (1)
| Title |
|---|
| 石红春等: "CVD方法制备ZnSe系统中尾气的处理", 《稀有金属》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2030670A1 (en) | 2009-03-04 |
| US20110038773A1 (en) | 2011-02-17 |
| JP2010537800A (en) | 2010-12-09 |
| WO2009027534A1 (en) | 2009-03-05 |
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Application publication date: 20100721 |