CN101752479A - Chip structure for LED - Google Patents
Chip structure for LED Download PDFInfo
- Publication number
- CN101752479A CN101752479A CN200810218305A CN200810218305A CN101752479A CN 101752479 A CN101752479 A CN 101752479A CN 200810218305 A CN200810218305 A CN 200810218305A CN 200810218305 A CN200810218305 A CN 200810218305A CN 101752479 A CN101752479 A CN 101752479A
- Authority
- CN
- China
- Prior art keywords
- layer
- hole
- light
- emitting diode
- chip structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention relates to a chip structure for an LED. The chip comprises a substrate, an epitaxial layer, a current extension layer, an N electrode, a P pad and a passivation layer. The passivation layer is superposed on the current extension layer. At least one hole is formed on the current extension layer, and the passivation layer contacts the epitaxial layer together through the hole. By forming at least one hole on the current extension layer, the surface of the epitaxial layer is exposed and the epitaxial layer is more reliably contacted with the passivation layer which covers on the epitaxial layer. Therefore, good contact between the current extension layer and the epitaxial layer is protected. The technology for manufacturing the LED is convenient, and the current extension of the chip can be obviously improved and the packaging percent of pass and the reliability of the LED are improved.
Description
Technical field
The present invention relates to field of semiconductor devices, especially relate to a kind of chip structure of light-emitting diode.
Background technology
The device reliability and the current extending of light-emitting diode (LED) are in close relations, in the basic LED of gallium nitride (GaN) makes, the ohmic contact of p type GaN is the influencing factor of most critical, this is because form very difficulty of highly doped P-GaN, so its film resistor is very high, must evaporation one deck conduct electricity very well and the film of printing opacity is realized the function of current expansion, this layer film is commonly referred to as an ohm conductive layer.Present most popular ohm conductive layer is many metal levels, be also referred to as current extending, many metal levels mainly are the work functions of utilizing the part material higher as ohm conduction, are easy to prolong layer (P-GaN) with the LED place and form ohmic contact, and contact resistivity can be less than 10-4 Ω cm2.Wherein many metal levels also have shortcoming as current extending, current extending is on the path of light output, it has played barrier effect to light, so must reduce thickness as far as possible to improve light transmission, but, reduce the ability variation that thickness can make its anti-mechanical stress, contact disengaging problem between many metal levels and the P-GaN may take place in chip manufacture and encapsulation process, thereby cause encapsulated device voltage to rise, the thermal resistance of device and electric current uniformity all can variation like this, thereby cause component failure, the chip problem that voltage rises after encapsulation appears in encapsulation process usually easily, though even more serious is that part of devices promptly shows the phenomenon that voltage rises after encapsulation, adhesion strength has been subjected to influence between in fact many metal levels and the P-GaN, to the reliability formation hidden danger of device.The scheme that solves adhesion problem between many metal levels and the P-GaN can realize by thickening many metal layer thickness at present, but this scheme can reduce the luminous intensity of chip; Thin many metal levels also can increase film resistor, cause the problem of the current expansion of p type ohmic contact.
Summary of the invention
The objective of the invention is to contact insecure problem, the LED chip construction that provides a kind of reliability effectively to be improved with epitaxial loayer at light-emitting diode chips current extending in the prior art.
For achieving the above object, technical scheme of the present invention is: provide a kind of reliability improved light-emitting diode, this light-emitting diode comprises substrate, epitaxial loayer, current extending, N electrode, P pressure welding point and passivation layer, described passivation layer is stacked and placed on the current extending, wherein: be provided with a hole on the described current extending at least, passivation layer touches with epitaxial loayer by this hole.
Compared with prior art; the present invention is by being provided with at least one hole on current extending; expose the source prolong laminar surface make it with cover it on passivation layer form more reliable the contact; thereby protective current extension layer and good contact of locating to prolong between the layer; the manufacture craft of this light-emitting diode is convenient, can significantly improve the encapsulation qualification rate and the reliability of chip current expansion and raising light-emitting diode.
Description of drawings
Fig. 1 is the chip profile structural representation of the embodiment of the invention;
Fig. 2 is the schematic diagram that the current extending of the embodiment of the invention is provided with six graphic structures;
Fig. 3 is the schematic diagram that the current extending of the embodiment of the invention is provided with eight graphic structures;
Fig. 4 is the schematic diagram that the current extending of the embodiment of the invention is provided with six holes.
Embodiment
In order to make technical problem to be solved by this invention, technical scheme and beneficial effect clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
Shown in Fig. 1-4, the embodiment of the invention provides a kind of chip structure of light-emitting diode, it comprises passivation layer 1, P pressure welding point 2, current extending 3, N electrode 4, LED epitaxial loayer 5 and substrate 6, the described substrate of present embodiment adopts Sapphire Substrate, described current extending 3 is provided with at least one hole 31, the size 2-8 micron in this hole is the best with 4 microns.Passivation layer 1 touches by described hole 31 with LED epitaxial loayer 5.
As shown in Figures 2 and 3, described hole 31 is oval, and best mode is that it is best execution mode that graphic structure is six, also can be set to the hole 31 of other quantity with two oval formation graphic structures that stack together that intersect, as four, eight etc.Thereby make passivation layer 1 bigger with the contact area of epitaxial loayer 5, it is more tight to make it contact.
The embodiment of the invention is utilized the high-adhesiveness between LED epitaxial loayer 5 and the passivation layer 1, guarantees the firm physics contact between golden many metal levels and the LED epitaxial loayer, and the current expansion ability of current extending 3 also can be improved in this hole 31.
The described chip structure of embodiments of the invention is to make by following manner:
(1) adopt the method for dry etching or wet etching that the N district is exposed;
(2) adopt evaporation, sputter, many metals of thin-film technique evaporation current extendings 3 such as coating;
(3) on current extending 3, make needed hole or pattern 31, shown in Fig. 2-4;
(4) make N electrode 4 and P pressure welding point 2;
(5) make passivation layer 1;
(6) N electrode 4 and P pressure welding point 2 are exposed in perforate;
Can obtain the described high reliability led chip of embodiment of the invention structure.
The above only is preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of being done within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. the chip structure of a light-emitting diode, this chip comprises substrate, epitaxial loayer, current extending, N electrode, P pressure welding point and passivation layer, described passivation layer is stacked and placed on the current extending, it is characterized in that: be provided with a hole on the described current extending at least, passivation layer touches with epitaxial loayer by this hole.
2. the chip structure of light-emitting diode according to claim 1 is characterized in that: described hole is for oval.
3. the chip structure of light-emitting diode according to claim 2 is characterized in that: described hole is two oval graphic structures that stack together that intersect.
4. the chip structure of light-emitting diode according to claim 3, it is characterized in that: described graphic structure is six.
5. the chip structure of light-emitting diode according to claim 1 is characterized in that: described hole is circle, prismatic, triangle, quadrangle or pentagon.
6. according to the chip structure of the arbitrary described light-emitting diode of claim 1-5, it is characterized in that: described hole is of a size of the 2-8 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810218305A CN101752479A (en) | 2008-12-09 | 2008-12-09 | Chip structure for LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810218305A CN101752479A (en) | 2008-12-09 | 2008-12-09 | Chip structure for LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101752479A true CN101752479A (en) | 2010-06-23 |
Family
ID=42479141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810218305A Pending CN101752479A (en) | 2008-12-09 | 2008-12-09 | Chip structure for LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101752479A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102255034A (en) * | 2011-07-15 | 2011-11-23 | 中国科学院半导体研究所 | Light emitting diode (LED) packaging structure |
| CN108563069A (en) * | 2018-04-25 | 2018-09-21 | 武汉华星光电技术有限公司 | Backlight surface light source and liquid crystal display device |
-
2008
- 2008-12-09 CN CN200810218305A patent/CN101752479A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102255034A (en) * | 2011-07-15 | 2011-11-23 | 中国科学院半导体研究所 | Light emitting diode (LED) packaging structure |
| CN102255034B (en) * | 2011-07-15 | 2013-05-08 | 中国科学院半导体研究所 | Light emitting diode (LED) packaging structure |
| CN108563069A (en) * | 2018-04-25 | 2018-09-21 | 武汉华星光电技术有限公司 | Backlight surface light source and liquid crystal display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109216515B (en) | Flip LED chip and manufacturing method thereof | |
| CN101711432B (en) | Vertical led with current guiding structure | |
| KR100941766B1 (en) | Light Emitting Diodes with redistributed metal pad and its manufacture method | |
| JP2010520640A5 (en) | ||
| JPH11340514A (en) | Flip-chip optical semiconductor element | |
| JP5279180B2 (en) | Semiconductor device | |
| TWI414082B (en) | Luminous diode chip with overvoltage protection | |
| US20150171274A1 (en) | Led structure | |
| CN109166877A (en) | Display panel and detection method of light-emitting assembly substrate | |
| KR100431760B1 (en) | AlGaInN LED device and their fabrication method | |
| CN105489742B (en) | A kind of LED flip chip and preparation method thereof | |
| KR102530758B1 (en) | Semiconductor light emitting device package | |
| JP4449919B2 (en) | Method for manufacturing light emitting device | |
| JP4474892B2 (en) | Flip chip type LED | |
| JP2770717B2 (en) | Gallium nitride based compound semiconductor light emitting device | |
| KR20090044311A (en) | Light emitting diode and its manufacturing method | |
| CN101752479A (en) | Chip structure for LED | |
| CN103137800B (en) | A kind of LED production method | |
| CN203260616U (en) | Led chip | |
| US11050002B2 (en) | Method for producing a semiconductor chip and semiconductor chip | |
| TW201210073A (en) | LED with local protection layer | |
| CN105280777A (en) | LED chip and manufacturing method thereof | |
| CN203288637U (en) | Light emitting diode | |
| CN212750918U (en) | Flip LED chip | |
| CN112216782B (en) | Light emitting diode chip and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| DD01 | Delivery of document by public notice |
Addressee: Chen Lin Document name: Notification of Publication of the Application for Invention |
|
| DD01 | Delivery of document by public notice |
Addressee: Century Epitech Co., Ltd. Chen Lin Document name: Notification of before Expiration of Request of Examination as to Substance |
|
| DD01 | Delivery of document by public notice |
Addressee: Shenzhen Century Epitech LEDs Co., Ltd. Chen Lin Document name: Notification that Application Deemed to be Withdrawn |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20100623 |