CN101622695A - CMP slurry for silicon film - Google Patents
CMP slurry for silicon film Download PDFInfo
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- CN101622695A CN101622695A CN200880006201A CN200880006201A CN101622695A CN 101622695 A CN101622695 A CN 101622695A CN 200880006201 A CN200880006201 A CN 200880006201A CN 200880006201 A CN200880006201 A CN 200880006201A CN 101622695 A CN101622695 A CN 101622695A
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- cmp
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 81
- 239000010703 silicon Substances 0.000 title claims abstract description 81
- 239000002002 slurry Substances 0.000 title claims abstract description 44
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 64
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 64
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 50
- 239000003093 cationic surfactant Substances 0.000 claims abstract description 26
- 239000006061 abrasive grain Substances 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000000227 grinding Methods 0.000 claims description 188
- 230000014509 gene expression Effects 0.000 claims description 24
- 150000003863 ammonium salts Chemical class 0.000 claims description 12
- 125000000217 alkyl group Chemical group 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 7
- -1 alkyl dimethyl benzyl ammonium Chemical compound 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 5
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 4
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- 125000005211 alkyl trimethyl ammonium group Chemical group 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 16
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000005498 polishing Methods 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 description 58
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 32
- 229920005591 polysilicon Polymers 0.000 description 32
- 239000000758 substrate Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 14
- 239000004744 fabric Substances 0.000 description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 6
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 6
- 239000001630 malic acid Substances 0.000 description 6
- 235000011090 malic acid Nutrition 0.000 description 6
- DDXLVDQZPFLQMZ-UHFFFAOYSA-M dodecyl(trimethyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+](C)(C)C DDXLVDQZPFLQMZ-UHFFFAOYSA-M 0.000 description 5
- 238000003801 milling Methods 0.000 description 5
- 231100000241 scar Toxicity 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- DCAYPVUWAIABOU-UHFFFAOYSA-N hexadecane Chemical compound CCCCCCCCCCCCCCCC DCAYPVUWAIABOU-UHFFFAOYSA-N 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 description 2
- KBIWNQVZKHSHTI-UHFFFAOYSA-N 4-n,4-n-dimethylbenzene-1,4-diamine;oxalic acid Chemical compound OC(=O)C(O)=O.CN(C)C1=CC=C(N)C=C1 KBIWNQVZKHSHTI-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Natural products OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- WOWHHFRSBJGXCM-UHFFFAOYSA-M cetyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](C)(C)C WOWHHFRSBJGXCM-UHFFFAOYSA-M 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- PLMFYJJFUUUCRZ-UHFFFAOYSA-M decyltrimethylammonium bromide Chemical compound [Br-].CCCCCCCCCC[N+](C)(C)C PLMFYJJFUUUCRZ-UHFFFAOYSA-M 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 150000003248 quinolines Chemical class 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- SZEMGTQCPRNXEG-UHFFFAOYSA-M trimethyl(octadecyl)azanium;bromide Chemical compound [Br-].CCCCCCCCCCCCCCCCCC[N+](C)(C)C SZEMGTQCPRNXEG-UHFFFAOYSA-M 0.000 description 1
- CEYYIKYYFSTQRU-UHFFFAOYSA-M trimethyl(tetradecyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCC[N+](C)(C)C CEYYIKYYFSTQRU-UHFFFAOYSA-M 0.000 description 1
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 1
- AISMNBXOJRHCIA-UHFFFAOYSA-N trimethylazanium;bromide Chemical compound Br.CN(C)C AISMNBXOJRHCIA-UHFFFAOYSA-N 0.000 description 1
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Abstract
Provided is a CMP slurry for silicon films, and by using such slurry, polishing speeds and polishing speed ratios of a silicon film, a silicon nitride film and a silicon oxide film required for performing CMP are obtained. In the CMP, one type of slurry is used for forming a contact plug by self-alignment to reduce semiconductor element manufacturing cost and improve yield. The slurry contains abrasive grains, a cationic surfactant and water and has a pH value of 6.0-8.0.
Description
Technical field
The present invention relates to a kind of CMP (cmp of the silicon fiml that when forming contact plunger, uses, Chemical mechanical Polishing) in, can obtain inhomogeneity cmp slurry for silicon film in excellent flatness and the wafer face with few process number.
Background technology
Because semiconductor element is highly integrated, the memory element as DRAM, SRAM particularly, for MOS transistor source electrode, drain electrode and upper strata wiring are connected, forming contact plunger (contact plug) by self-aligned manner (self-alignment) becomes necessary.In Fig. 1, show with behind the self-aligned manner formation contact hole schematic cross-section of the semiconductor element when the whole face of wafer is formed with the polysilicon film of conduct conduction material.In Fig. 1,1 expression silicon substrate, 2 is the gate pole dielectric film, 3 is gate structure.Gate structure 3 becomes the structure of the gate pole cap layer 4 that has dielectric film on conductive layer.In the gate pole conductive layer, use 2 layers of structure forming by metal silicide 9 and polysilicon 10, in gate pole cap layer 4, use silicon nitride film.5 is the gate pole dividing plate, and 6 expression etch stop layers use silicon nitride film in gate pole dividing plate 5 and etch stop layer 6.7 expression dielectric films use silicon oxide film or bpsg film etc. in dielectric film 7.
By using the dry-etching of photomask, remove dielectric film 7, form contact hole.8 expressions are as the polysilicon film of the conduction material of contact plunger.
In order to form contact plunger, the not part by CMP removes polysilicon film 8 further in order to prevent the short circuit between the contact hole, also needs to remove a part of gate pole cap layer 4.But owing to also need residual gate pole cap layer 4 behind CMP, therefore, the grinding rate that constitutes the silicon nitride film of gate pole cap layer 4 can not be too fast.Thus, the grinding rate of polysilicon film and silicon nitride film ratio, that is, the grinding rate of polysilicon film: the grinding rate of silicon nitride film is suitably 5～50: 1.
Be used to remove the part of gate pole cap layer 4, fully remove polysilicon film 8 not part cross that to grind be to carry out under the state that exposes dielectric film 7.At this moment, if the grinding rate of dielectric film 7 is fast, then gate pole cap layer 4 disappears, and grinds and proceeds to the gate pole conductive layer, causes device rate of finished products or reliability to reduce.Therefore, the grinding rate that constitutes the silicon oxide film of dielectric film 7 need be little more a lot of than the speed of the silicon nitride that constitutes gate pole cap layer 4, and becoming almost to stop CMP.But,, otherwise can damage flatness if silicon oxide film is not ground fully.Therefore, the grinding rate of silicon oxide film is 1/3～1/20th of a silicon nitride film, suits.Fig. 2 shows the semiconductor element sectional view behind the CMP.
In semiconductor element as shown in Figure 1, the thickness of polysilicon film 8 is 100～400nm, and the thickness of gate pole cap layer 4 is about 10～100nm.At this moment, in order to implement CMP with a kind of lapping liquid, the grinding rate of polysilicon film is 100～300nm/ minute, the grinding rate of silicon nitride film is 5.0～30nm/ minute, the grinding rate of silicon oxide film is to suit in 0.3～3nm/ minute, the grinding rate ratio of polysilicon film and silicon nitride film, promptly, the grinding rate of polysilicon film: the grinding rate of silicon nitride film is 5～50: 1, the grinding rate ratio of silicon nitride film and silicon oxide film, that is the grinding rate of silicon nitride film: the grinding rate of silicon oxide film is the 3～20: the 1st, suits.
But, in technology in the past,, just can obtain the lapping liquid of above-mentioned grinding rate and grinding rate ratio with a kind of lapping liquid also not with respect to polysilicon film, silicon nitride film, silicon oxide film.Therefore, need to use 2 kinds of lapping liquids to carry out the methods such as CMP in 2 stages, the technology cost increases becomes big problem.
Record following method in No. 2006/0105569 specification of U.S. Patent Application Publication: at the grinding rate of polysilicon film: the grinding rate of silicon nitride film: the grinding rate of silicon oxide film is under 1: 1: 1～4: 1: 1 the CMP condition, carries out the method for CMP with a kind of lapping liquid.But, the grinding rate of silicon nitride film and silicon oxide film ratio in this method, that is, the grinding rate of silicon nitride film: the grinding rate of silicon oxide film is little, is 1: 1, therefore thinks that silicon oxide film can not become CMP and stop layer, is difficult to control amount of grinding.
In TOHKEMY 2002-305167 communique, proposed to use the method for the lapping liquid that contains polymine and choline derivative.The grinding rate that this lapping liquid can obtain polysilicon film is that 600nm/ minute, the grinding rate of silicon oxide film are that 15.2nm/ minute, the grinding rate of silicon nitride film are 33.4nm/ minute.But, the grinding rate of silicon nitride film and silicon oxide film ratio in this method, that is, the grinding rate of silicon nitride film: the grinding rate of silicon oxide film is little, is 2.2: 1, therefore thinks that silicon oxide film can not become CMP and stop layer, is difficult to control amount of grinding.
In No. 3457144 communique of Japan Patent, disclose and used the polysilicon grinding method for compositions that contains alkaline organic compound.In this method, though the grinding rate of polysilicon film and silicon oxide film than big, because the grinding rate of silicon nitride film is slow, therefore, can not be implemented the CMP that contact plunger forms with a kind of lapping liquid.
In No. 3190742 communique of Japan Patent, the method that the grinding agent that uses phosphoric acid grinds silicon nitride film is disclosed.In this method, the grinding rate of silicon nitride film is that 120nm/ minute, the grinding rate of silicon oxide film are 15nm/ minute, though silicon oxide film with respect to the grinding rate of silicon nitride film than very little, the grinding rate of polysilicon film is 70nm/ minute, is slow.Therefore, this situation can not be implemented the CMP that contact plunger forms with a kind of lapping liquid.
In technology in the past, also do not obtain just can implementing the CMP lapping liquid of the CMP of contact plunger formation like this with a kind of lapping liquid.
Problem of the present invention can implement to be used for being formed by self-aligned manner the CMP of contact plunger with a kind of lapping liquid for a kind of cmp slurry for silicon film is provided, and a kind of cmp slurry for silicon film that can reduce the semiconductor element manufacturing cost further is provided.
Summary of the invention
The present invention relates to a kind of cmp slurry for silicon film,, solve above-mentioned problem by using cationic surfactant.In addition, as another aspect of the present invention, relate to a kind of cmp slurry for silicon film, it contains abrasive grains, cationic surfactant and water, regulates pH and forms to the suitableeest scope.
According to cmp slurry for silicon film of the present invention, can recently carry out CMP with suitable grinding rate and grinding rate to silicon fiml, silicon nitride film, each film of silicon oxide film, therefore can be used for the CMP that semiconductor element self-aligned contacts connector forms with a kind of lapping liquid.Thus, can reduce the manufacturing cost of semiconductor element.
Description of drawings
Fig. 1 is the sectional view of the preceding semiconductor element of expression CMP.
Fig. 2 is the sectional view of the semiconductor element behind the expression CMP.
Embodiment
Below, relevant embodiment of inventing is described in detail in detail.
With regard to cmp slurry for silicon film of the present invention, as an one execution mode, be the lapping liquid that contains abrasive grains, cationic surfactant and water, be useful to the CMP of silicon fimls such as polysilicon film or amorphous silicon film.
Employed abrasive grains can be enumerated silicon dioxide, aluminium oxide, ceria, zirconia, titanium oxide and germanium oxide etc. among the present invention.Be preferably silicon dioxide in these abrasive grains, particularly cataloid can obtain the little abrasive grains of particle diameter with low cost, is preferred from reducing the angle of grinding scar.
Owing to grind the generation of scar the LSI rate of finished products is reduced, therefore, the LSI of miniaturization is also strict more to reducing the requirement of grinding scar more.Thus, as the average grain diameter of abrasive grains, the average grain diameter of the abrasive grains offspring before the manufacturing of CMP lapping liquid is preferably 5～150nm, more preferably 10～100nm.In addition, the average grain diameter of the abrasive grains offspring after the manufacturing of CMP lapping liquid is preferably 5～200nm, more preferably 10～150nm.When the average grain diameter of the abrasive grains offspring before and after the manufacturing of CMP lapping liquid departs from above-mentioned scope, have to be easy to generate the possibility of grinding scar.Here, be meant after the manufacturing of CMP lapping liquid from the manufacturing of CMP lapping liquid approximately through after 24 hours.In addition, the average grain diameter of abrasive grains offspring can be measured by dynamic light scattering method.Particularly, can measure by subparticle analyzer N5 of Beckman kurt instrument device system (Beckman CoulterGmbH) etc.
The concentration of the abrasive grains in the cmp slurry for silicon film is preferably 0.1～10 weight %, more preferably 0.5～5 weight %.If the concentration of described abrasive grains, then has the tendency that the grinding rate of silicon fiml slows down less than 0.1 weight %,, then have and be easy to generate the tendency of grinding scar if surpass 10 weight %.
Among the present invention, by using cationic surfactant, the high grinding rate, silicon nitride film that can obtain silicon fiml with respect to the grinding rate of the abundance of silicon oxide film than and silicon fiml with respect to the grinding rate ratio of the abundance of silicon nitride film.In addition, in order to obtain such effect, optimal pH is 6.0～8.0 neutral region, by making pH in above-mentioned scope, the become grinding rate of ratio silicon oxide film of the grinding rate of silicon nitride film is fast, the grinding rate of silicon nitride film improves the grinding selectivity of silicon nitride film with respect to the grinding rate of silicon oxide film easily than becoming big, becoming.If pH is greater than 8.0, though then the grinding rate of silicon fiml accelerates,, the grinding rate of ratio silicon oxide film is slow because the grinding rate of silicon nitride film becomes, so the result can not get suitable grinding rate ratio.If pH is less than 6.0, then the grinding rate of silicon fiml is slack-off, and the grinding rate of silicon fiml diminishes with respect to the grinding rate ratio of silicon nitride film.In addition, the preferred grinding rate of relevant each film of explanation and preferably grinding rate ratio in the back.
As the cationic surfactant that uses in the present invention, so long as in molecule, have the chemical constitution that has hydrophilic segment and hydrophobic part, hydrophilic segment becomes cation in the CMP lapping liquid surfactant, just have no particular limits, for example can enumerate aliphatic amine or its salt, aliphat ammonium salt etc.
As above-mentioned aliphat ammonium salt, the preferred compound that uses with following general formula (1) expression.
[R
1N(R
2)
3]
+X
-·····(1)
(in the formula, R
1The carbon number of expression main chain is 8～18 1 valency alkyl, R
2Represent 1 valency substituting group independently of one another.)
Aliphat ammonium salt with regard to above-mentioned general formula (1) expression has as R
11 valency alkyl, from the angle of silicon fiml grinding rate and lapping liquid storage stability, R
1Be preferably the backbone c atoms number and be 8～18 1 valency alkyl, more preferably the backbone c atoms number is 10～16 1 valency alkyl.If described carbon number is too small, then have the tendency that the grinding rate of silicon fiml slows down, therefore be preferably more than 8, more preferably more than 10.If described carbon number is excessive, then have the tendency of CMP lapping liquid bad stability, therefore be preferably below 18, more preferably below 16.X in above-mentioned general formula (1) as long as can form and the corresponding anion of cationic moiety, just is not particularly limited, and for example can enumerate Cl, Br, NO
3, CH
3COO, OH etc.In addition, above-mentioned general formula (1) can be by becoming [R as long as the aliphat ammonium salt of expression can finally become the compound with general formula (1) expression in the CMP lapping liquid in the CMP lapping liquid
1N (R
2)
3]
+Material and become X
-Material in water, mix and obtain.Use as the tetraethyl ammonium hydroxide do not have the quaternary ammonium salt of chain alkyl the time, particularly be 6.0～8.0 neutral region at pH, the grinding rate of silicon fiml is slack-off, the grinding rate of silicon oxide film accelerates.
With regard to the aliphat ammonium salt of above-mentioned general formula (1) expression, from the grinding rate of silicon fiml, silicon fiml with respect to the grinding rate of silicon nitride film than, silicon nitride film angle, more preferably R with respect to the grinding rate ratio of silicon oxide film
2Alkyl trimethyl ammonium for the expression of the following general formula (2) of methyl.
[C
nH
2n+1N(CH
3)
3]
+X
-·····(2)
(in the formula, n is 8～18 integer.)
In addition, the aliphat ammonium salt as with above-mentioned general formula (1) expression preferably uses R
1Be that the backbone c atoms number is 8～18 1 valency alkyl, R
2In one and R
1Identical and other is the dialkyl dimethyl ammonium of methyl, or R
2One for benzyl other is the alkyl dimethyl benzyl ammonium of methyl.
As above-mentioned fatty amine or its salt, be preferably monoamine, diamines or their salt.As aliphatic diamine, the preferred compound that uses with following general formula (3) expression.
H
2N-R
3-NH
2 ·····(3)
(in the formula, R
3Expression backbone c atoms number is 8～18 divalent alkyl.)
In addition, as the salt of aliphat ammonium, preferably with the methonium compounds of following general formula (4) expression.
((CH
3)
3N-R
3-N(CH
3)
3)
2+2X
-·····(4)
(in the formula, R
3Expression backbone c atoms number is 8～18 divalent alkyl.)
The compound of above-mentioned general formula (3) or (4) expression can obtain the equal characteristic of compound with general formula (1) expression, but from reducing the angle that the CMP lapping liquid bubbles, be excellent.In described general formula (3) or (4), if R
3Therefore the tendency that the too small grinding rate that then has silicon fiml of backbone c atoms number slows down is preferably more than 8, more preferably more than 10.If described carbon number is excessive, then have the tendency of CMP lapping liquid bad stability, therefore be preferably below 18, more preferably below 16.X in the described general formula (4), so long as can form and the corresponding anion of cationic moiety, just there is no particular limitation, for example can enumerate Cl, Br, NO
3, CH
3COO, OH etc.
Object lesson as the cationic surfactant that uses among the present invention, can enumerate the octyl group trimethylammonium bromide, the decyl trimethylammonium bromide, lauryl trimethyl ammonium chloride, tetradecyl trimethyl ammonium chloride, hexadecyltrimethylammonium chloride, aliphat ammonium salts such as octadecyl trimethylammonium bromide, octylame, decyl amine, lauryl amine, 1,8-diaminourea octane, 1, the 10-diamino decane, 1,12-diaminourea dodecane, 1, the 14-diaminourea tetradecane, 1, aliphatic amines such as 16-diaminourea hexadecane, octyl group methonium chloride, decyl methonium bromide, dodecyl methonium bromide, myristyl methonium chloride, methonium compounds such as cetyl methonium chloride etc.
The concentration of the cationic surfactant in the cmp slurry for silicon film is preferably 1～1000ppm, more preferably 5～500ppm (ppm all is that weight converts).The concentration of described cationic surfactant is during less than 1ppm, the grinding rate that has silicon fiml is slack-off, the grinding rate of silicon fiml is with respect to the tendency of the grinding rate ratio reduction of silicon nitride film, when surpassing 1000ppm, have the aggegation that produces abrasive grains, the tendency that the storage stability of CMP lapping liquid worsens.
Among the present invention, by adding cationic surfactant, in the neutral region of pH6.0～8.0, can reach the high grinding rate of silicon fiml and the low grinding rate of silicon oxide film, the silicon fiml grinding rate that can obtain suiting and the ratio of silicon nitride film grinding rate, and the ratio of silicon oxide film grinding rate and silicon nitride film grinding rate.
Cmp slurry for silicon film of the present invention is that abrasive grains is dispersed into the slurries shape and forms in water.The combined amount of water is a surplus with respect to the total amount of described various compositions.
The pH of cmp slurry for silicon film is 6.0～8.0, is preferably 6.2～7.8.Cmp slurry for silicon film of the present invention is in pH is 6.0～8.0 zone, and pH is low more, and it is fast more that the silicon nitride film grinding rate becomes, and on the contrary, the variation of the grinding rate of silicon fiml and the grinding rate of silicon oxide film is little.Thus, by regulating pH, can easily regulate the grinding rate ratio of each grinding film.The pH of described cmp slurry for silicon film was less than 6.0 o'clock, and the grinding rate of silicon fiml is slack-off, and the grinding rate of silicon nitride film accelerates, therefore the grinding rate ratio that can not get suiting.Described pH surpasses at 8.0 o'clock, and the become grinding rate of ratio silicon oxide film of the grinding rate of silicon nitride film is slow, the grinding rate ratio that can not get suiting.The pH of CMP lapping liquid can measure by using the pH measuring instrument.
PH for cmp slurry for silicon film regulates, and can use suitable acid, alkali as required.As acid, have no particular limits, can use inorganic acids such as hydrochloric acid, nitric acid, sulfuric acid, organic acids such as ethanedioic acid, acetic acid, malic acid.As alkali, also have no particular limits, can use ammonia, amine, quaternary ammonium base, potassium hydroxide etc.The combined amount of described acid or alkali can be selected aptly, is 1～1000ppm with respect to cmp slurry for silicon film usually.
With regard to the disclosed lapping liquid that contains alkaline organic compound in No. 3457144 communique of above-mentioned patent, though can obtain the high grinding rate of silicon fiml and the low grinding rate of silicon oxide film, if but pH is less than 6.0, the grinding rate of silicon fiml is slack-off, if pH surpasses 8, the grinding rate of silicon nitride film is slack-off, the grinding rate ratio that can not get suiting.
Cmp slurry for silicon film of the present invention, owing to cationic surfactant be used for that pH regulates acid that purposes uses or the addition of alkali is micro-, the therefore aggegation that is not easy to produce abrasive grains keeps excellent in stability.
In addition, cmp slurry for silicon film of the present invention also is stable even concentrate the composition of CMP lapping liquid, therefore also can adopt and dilute the method for using in use.Thus, can further reduce the cost of CMP lapping liquid.
In the silicon fiml CMP operation when forming contact plunger, need regulate suitable grinding rate and the grinding rate ratio of grinding condition according to each film thickness of silicon fiml, silicon nitride film, silicon oxide film to obtain each film by self-aligned manner.But, think that the grinding rate of each film changes according to various factors such as membranous, grinding pad kind, lapping device kinds.With respect to these factors,, therefore,, be difficult to obtain the suitable grinding rate and the grinding rate ratio of each film only by the optimization of grinding condition owing to can be restricted by the scope that the grinding conditions such as rotation number of grinding pressure or grinding plate are regulated.Therefore, regulate grinding rate and grinding rate than being necessary by the CMP lapping liquid.
With regard to cmp slurry for silicon film of the present invention, adjusting by pH, can remain at grinding rate the grinding rate of silicon fiml and silicon oxide film almost constant in, only regulate the grinding rate of silicon nitride film, therefore, the adjusting of the grinding rate ratio of each film becomes easily, can easily reach suitable grinding rate and grinding rate ratio.
Then, illustrate relevant when using cmp slurry for silicon film of the present invention, the suitable grinding rate of each film.The grinding rate R (pSi) of silicon fiml was preferably more than 100nm/ minute, more preferably 100～300nm/ minute, was preferably 110～250nm/ minute especially.If the grinding rate R (pSi) of described silicon fiml was less than 100nm/ minute, milling time is elongated, so productivity reduces, if surpass 300nm/ minute, then has because overmastication and tendency that flatness worsens.The grinding rate R (SiN) of silicon nitride film is preferably 5.0～30nm/ minute, more preferably 5.0～20nm/ minute.If the grinding rate R (SiN) of described silicon nitride film was less than 5.0nm/ minute, then be necessary to increase the milling time of silicon nitride film, therefore have the tendency that productivity reduces,, then have because overmastication and tendency that flatness worsens if surpass 30nm/ minute.Grinding rate R (the SiO of silicon oxide film
2) be preferably 0.3～3nm/ minute, more preferably 0.3～2.5nm/ minute.Grinding rate R (the SiO of described silicon oxide film
2) during less than 0.3nm/ minute, owing to be difficult to grind the natural oxide film on silicon fiml surface, have the milling time of silicon fiml elongated, reduce productive tendency, when surpassing 3nm/ minute, because overmastication has the tendency that flatness worsens.
In addition, when using cmp slurry for silicon film of the present invention, the suitable grinding rate of each film than preferably satisfy simultaneously following formula (5) and (6) both.
R(pSi)/R(SiN)＞5?·····(5)
R(SiN)/R(SiO
2)＞2·····(6)
Above-mentioned formula (5) expression silicon fiml grinding rate is with respect to the ratio of silicon nitride film grinding rate, and the value of R (pSi)/R (SiN) is preferably more than 5, more preferably greater than 5 and smaller or equal to 50, is preferably more than 9 especially and below 50.The value of described R (pSi)/R (SiN) is 5 when following, when carrying out grinding in order to remove polysilicon film not, has the silicon nitride film over-lapping, the tendency that flatness reduces.Above-mentioned formula (6) expression silicon nitride film grinding rate is with respect to the ratio of silicon oxide film grinding rate, R (SiN)/R (SiO
2) value be preferably more than 2, more preferably greater than 2 and smaller or equal to 20, be preferably more than 2.5 especially and below 20.Described R (SiN)/R (SiO
2) value be 2 when following, have the tendency that flatness worsens.
Use the CMP Ginding process of cmp slurry for silicon film of the present invention to be: to use the cmp slurry for silicon film of the invention described above, grind to being formed with the substrate that contains silicon fiml, silicon nitride film and silicon oxide film by grinding film.Is silicon fiml, silicon nitride film and silicon oxide film as what grind object by grinding film, and these films separately can be individual layers, also can be laminations.Silicon fiml is polysilicon film or amorphous silicon film among the present invention.
As substrate, can enumerate the substrate that relates in the semiconductor device manufacturing, for example at the semiconductor substrate in the stage that has formed circuit element and wiring figure, formed on the semiconductor substrates such as semiconductor substrate in stage of circuit element and be formed with substrate of insulating barrier etc.
Grinding by grinding film is undertaken by cmp, specifically be, will be formed with by the substrate of abradant surface by the state on the abrasive cloth that is pressed in grinding plate (pad) under, supply with cmp slurry for silicon film of the present invention on one side, relatively mobile grinding plate in one side and substrate, thus grind by abradant surface.
As the device that grinds, when for example grinding, can use general lapping device with pedestal and platform by abrasive cloth, this pedestal can keep polished substrate, and this platform is connected with engine that can change rotation number etc. and is pasted with abrasive cloth.For example can use Applied Materials (Applied Materials, Inc.) Zhi lapping device Miller (Mirra).
As abrasive cloth, can use general nonwoven fabrics, polyurathamc, porous matter fluororesin etc., but be not particularly limited.To grinding condition without limits, but the rotary speed of platform is preferably the following so that substrate of 130rpm does not fly out.Have the pressure of being pushed to abrasive cloth by the substrate of abradant surface (grinding pressure) and be preferably 3～60kPa, for the quilt that satisfies CMP speed grinds inner evenness and figure flatness, more preferably 6～40kPa.
During grinding, continuously cmp slurry for silicon film is supplied with abrasive cloth with pump etc.The quantity delivered of cmp slurry for silicon film without limits, the surface of preferred abrasive cloth is often covered by cmp slurry for silicon film.
After preferably will grinding substrate after finishing and in flowing water, fully cleaning, use spin dryer etc. to shake off, carry out drying attached to behind the water droplet on the substrate.Carry out CMP under the same state for the abrasive cloth surface state is often remained on, preferably before grinding, add abrasive cloth and adjust operation.For example, use the trimmer that has the diamond dust particle, carry out the adjustment of abrasive cloth with moisture at least liquid.Then, implement CMP grinding step of the present invention, the preferred substrate matting that further adds.
When using cmp slurry for silicon film of the present invention to have the CMP of the semiconductor element in cross section as shown in Figure 1, after polysilicon film 8 was ground, gate pole cap layer 4 and insulating barrier 7 exposed.Afterwards, carrying out suitable crossing grinds.Use among the CMP of cmp slurry for silicon film of the present invention, because the grinding rate of the grinding rate of the grinding rate of polysilicon film 8, gate pole cap layer 4, the grinding rate of dielectric film 7, polysilicon film 8 suits respectively with respect to the grinding rate of the ratio of gate pole cap layer 4 grinding rate, gate pole cap layer 4 ratio with respect to the grinding rate of dielectric film 7, therefore, as shown in Figure 2, can not expose the gate pole conductive layer, and the part that can remove gate pole cap layer 4 can be removed polysilicon film 8 not fully.Therefore, by using a kind of CMP of lapping liquid, just can obtain good flatness and be ground inner evenness, the raising of the reduction of semiconductor element manufacturing cost, the raising of rate of finished products, reliability is possible.
Embodiment
Below, the embodiment of the invention is described.The present invention is not subjected to the restriction of these embodiment.
Embodiment 1～15
Embodiment 1～15 is that after the cationic surfactant shown in mixing water, cataloid and the table 1 or 2, the pH that the interpolation malic acid is adjusted to table 1 or 2 makes the CMP lapping liquid.PH measures with pH measuring instrument (the model HM-21P of DKK Toa Corp.'s system).Specifically, use standard buffer solution (phthalate pH pH of buffer: 4.01 (25 ℃), neutral phosphor hydrochlorate pH pH of buffer 6.86 (25 ℃), borate titer pH:9.18 (25 ℃)), after carrying out 3 point calibrations, in the CMP lapping liquid, put into electrode, through more than 10 minutes, measure the value after stablizing.
The concentration of the cataloid in the CMP lapping liquid is 3 weight %.The offspring average grain diameter of cataloid is about 10nm before the CMP lapping liquid is made, and is about 20nm after the lapping liquid manufacturing, and this average grain diameter is in room temperature placement after the lapping liquid manufacturing after 1 month, almost no change.Average grain diameter uses subparticle analyzer N5 (Beckman kurt instrument device corporate system) to measure.
With regard to the concentration of the cationic surfactant in the CMP lapping liquid, embodiment 1～13 is 100ppm, and embodiment 14 and 15 is 40ppm (ppm all is that weight converts).In addition, the combined amount of the malic acid that uses for the value of table 1 or 2 for the pH that makes the CMP lapping liquid is between 5～100ppm in the CMP lapping liquid.
Use is formed with each wafer shown below of polysilicon film, silicon nitride film, silicon oxide film, on one side each CMP lapping liquid of the foregoing description 1～15 is dripped on the grinding pad that sticks on the platform, carry out CMP under the grinding condition shown in following on one side and handle.Decide each thickness that CMP handles front and back with the thick instrumentation of photo interference film, calculate grinding rate from this film thickness difference and milling time.It the results are shown in table 1 or 2.
Wafer
As the CMP wafer of polysilicon film, use be after diameter (φ) is to form the silicon oxide film of 100nm on 8 inches the silicon wafer, be formed with the wafer of the polysilicon film of 500nm by CVD (Chemical Vapor Deposition).
As the CMP wafer of silicon nitride film, use be to be the wafer that is formed with the silicon nitride film of 200nm on 8 inches the silicon wafer by CVD at diameter (φ).
As the CMP wafer of silicon oxide film, use be to be the wafer that is formed with the silicon oxide film of 500nm on 8 inches the silicon wafer by plasma CVD at diameter (φ).
Grinding condition
Lapping device: platform size 600nm φ, rotary-type
Grinding pad: foaming polyurethane resin
Gasket groove: concentric circles
Grinding pressure: 210hPa
The rotation number of wafer substrate: 80min
-1
The rotation number of grinding plate: 80min
-1
Lapping liquid flow: 200ml/min
Milling time: each film 1 minute
Shown in table 1 or 2, any one of embodiment 1～15, at the grinding rate of the grinding rate of the grinding rate of polysilicon film, silicon nitride film, silicon oxide film, polysilicon film grinding rate with respect to the ratio of silicon nitride film grinding rate, silicon nitride film grinding rate with respect to aspect the ratio of silicon oxide film grinding rate, can obtain good value.In addition, if reduce pH as can be known then the grinding rate of silicon nitride film is slack-off, therefore, can regulate the grinding rate of silicon nitride film by regulating pH.When using BPSG to replace silicon oxide film, though grinding rate prediction maximum is increased to about 2 times, from result of the present invention, even use the situation of BPSG, CMP lapping liquid of the present invention also can be suitable for.
Comparative example 1
Use Tetramethylammonium hydroxide to replace cationic surfactant, the concentration that makes Tetramethylammonium hydroxide in the CMP lapping liquid after the interpolation is 100ppm, and it is 7.2 that the interpolation malic acid makes pH, in addition, similarly make the CMP lapping liquid with embodiment, measure the grinding rate of each film.The results are shown in the table 3.
Comparative example 2
Use Tetramethylammonium hydroxide to replace cationic surfactant, the concentration that makes Tetramethylammonium hydroxide in the CMP lapping liquid after the interpolation is 100ppm, and it is 6.9 that the interpolation malic acid makes pH, in addition, similarly make the CMP lapping liquid with embodiment, measure the grinding rate of each film.The results are shown in the table 3.
Comparative example 3
Use lauryl trimethyl ammonium chloride as cationic surfactant, the concentration that makes lauryl trimethyl ammonium chloride in the CMP lapping liquid after the interpolation is 100ppm, and it is 5.7 that the interpolation malic acid makes pH, in addition, similarly make the CMP lapping liquid with embodiment, measure the grinding rate of each film.The results are shown in the table 3.
Comparative example 4
Use lauryl trimethyl ammonium chloride as cationic surfactant, the concentration that makes lauryl trimethyl ammonium chloride in the CMP lapping liquid after the interpolation is 100ppm, it is 8.3 that the interpolation Tetramethylammonium hydroxide makes pH, in addition, similarly make the CMP lapping liquid with embodiment, measure the grinding rate of each film.The results are shown in the table 3.
Table 3
As shown in table 3, do not use the comparative example 1 and 2 of cationic surfactant, to compare with embodiment 1～15, the grinding rate of polysilicon film is slack-off, and the grinding rate of silicon oxide film accelerates.As can be known from these results, do not use the CMP lapping liquid of cationic surfactant can not obtain the suitable grinding rate and the grinding rate ratio of each film.In the low comparative example 3 of the pH of CMP lapping liquid, the grinding rate of polysilicon film is slow, and the polysilicon film grinding rate is insufficient with respect to the ratio of silicon nitride film grinding rate.In the high comparative example 4 of the pH of CMP lapping liquid, the become grinding rate of ratio silicon oxide film of the grinding rate of silicon nitride film is slow.As can be known from these results, the pH of CMP lapping liquid can not obtain the suitable grinding rate and the grinding rate ratio of 3 types film less than 6.0 or greater than 8.0 o'clock.
Claims (9)
1. a cmp slurry for silicon film is characterized in that, contains abrasive grains, cationic surfactant and water and forms, and pH is 6.0～8.0.
2. cmp slurry for silicon film according to claim 1, wherein, described cationic surfactant is more than one the material of selecting from aliphatic amine or its salt, aliphat ammonium salt.
3. cmp slurry for silicon film according to claim 1 and 2, wherein, described cationic surfactant is the aliphat ammonium salt of following general formula (1) expression,
[R
1N(R
2)
3]
+X
-……(1)
In the formula, R
1Expression backbone c atoms number is 8～18 1 valency alkyl, R
2Represent 1 valency substituting group independently of one another.
4. according to each described cmp slurry for silicon film in the claim 1～3, wherein, described cationic surfactant is the aliphat ammonium salt of following general formula (2) expression,
[C
nH
2n+1N(CH
3)
3]
+X
-……(2)
In the formula, n is 8～18 integer.
5. according to each described cmp slurry for silicon film in the claim 1～4, wherein, described cationic surfactant is more than one the aliphat ammonium salt of selecting from alkyl trimethyl ammonium, dialkyl dimethyl ammonium, alkyl dimethyl benzyl ammonium.
6. cmp slurry for silicon film according to claim 1 and 2, wherein, described cationic surfactant is the aliphatic amine of following general formula (3) expression
H
2N-R
3-NH
2……(3)
In the formula, R
3Expression backbone c atoms number is 8～18 divalent alkyl.
7. cmp slurry for silicon film according to claim 1 and 2, wherein, described cationic surfactant is the aliphat ammonium salt of following general formula (4) expression
((CH
3)
3N-R
3-N(CH
3)
3)
2+2X
-……(4)
In the formula, R
3Expression backbone c atoms number is 8～18 divalent alkyl.
8. according to each described cmp slurry for silicon film in the claim 1～7, wherein, the grinding rate R (pSi) of silicon fiml is more than 100nm/ minute, and the grinding rate R (SiN) of silicon nitride film is 5.0～30nm/ minute, the grinding rate R (SiO of silicon oxide film
2) be 0.3～3nm/ minute.
9. according to each described cmp slurry for silicon film in the claim 1～8, wherein, the silicon fiml grinding rate with respect to the ratio of silicon nitride film grinding rate be R (pSi)/R (SiN) greater than 5, and the silicon nitride film grinding rate is R (SiN)/R (SiO with respect to the ratio of silicon oxide film grinding rate
2) greater than 2.
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|---|---|---|---|
| JP047008/2007 | 2007-02-27 | ||
| JP2007047008 | 2007-02-27 | ||
| JP139482/2007 | 2007-05-25 |
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|---|---|
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ID=41514935
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103495929A (en) * | 2013-09-18 | 2014-01-08 | 杭州百木表面技术有限公司 | Grinding and polishing method of metal strip |
| CN105518833A (en) * | 2013-09-10 | 2016-04-20 | 日立化成株式会社 | Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate |
| CN107398779A (en) * | 2016-05-18 | 2017-11-28 | 上海新昇半导体科技有限公司 | A kind of final polishing method of wafer |
| CN114437883A (en) * | 2020-11-06 | 2022-05-06 | 凯斯科技股份有限公司 | Composition for dissolving polishing particles and cleaning method using the same |
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2008
- 2008-02-05 CN CN200880006201A patent/CN101622695A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105518833A (en) * | 2013-09-10 | 2016-04-20 | 日立化成株式会社 | Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate |
| US10752807B2 (en) | 2013-09-10 | 2020-08-25 | Hitachi Chemical Company, Ltd | Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate |
| US11578236B2 (en) | 2013-09-10 | 2023-02-14 | Showa Denko Materials Co., Ltd. | Slurry, polishing-liquid set, polishing liquid, and polishing method for base |
| CN103495929A (en) * | 2013-09-18 | 2014-01-08 | 杭州百木表面技术有限公司 | Grinding and polishing method of metal strip |
| CN107398779A (en) * | 2016-05-18 | 2017-11-28 | 上海新昇半导体科技有限公司 | A kind of final polishing method of wafer |
| CN114437883A (en) * | 2020-11-06 | 2022-05-06 | 凯斯科技股份有限公司 | Composition for dissolving polishing particles and cleaning method using the same |
| US12091636B2 (en) | 2020-11-06 | 2024-09-17 | Kctech Co., Ltd. | Composition for dissolving abrasive particles and cleaning method using the same |
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