CN101431003A - Exhaustion ring and plasma processing device - Google Patents
Exhaustion ring and plasma processing device Download PDFInfo
- Publication number
- CN101431003A CN101431003A CNA2007101770386A CN200710177038A CN101431003A CN 101431003 A CN101431003 A CN 101431003A CN A2007101770386 A CNA2007101770386 A CN A2007101770386A CN 200710177038 A CN200710177038 A CN 200710177038A CN 101431003 A CN101431003 A CN 101431003A
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- China
- Prior art keywords
- air exhaust
- hole
- exhaust loop
- plasma
- insulating coating
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Abstract
The invention discloses an exhaust ring and a plasma processing device; wherein, the exhaust ring is provided with a plurality of through holes, at least one section of which is inclined to the plane of a body in the longitudinal direction; the through hole can be an inclined hole, a labyrinth hole, a curve hole or a broken line hole, and the like. The cross-section of the through hole can be round, ellipse, long round, triangle or echelon, and the like. After the exhaust ring is arranged between a reaction chamber and a pumping chamber of the plasma processing device, during the pumping process, the through hole has a certain barrier effect on the plasma, thus having good shielding effect on the plasma.
Description
Technical field
The present invention relates to a kind of semiconductor processing, relate in particular to a kind of air exhaust loop and plasma arc processing apparatus.
Background technology
In field of semiconductor processing, semiconductor chip need carry out plasma process in the reaction chamber of plasma arc processing apparatus, as etching, vapor phase deposition etc.Therefore need apply radio frequency to reaction chamber, make the process gas that enters in the reaction chamber be excited into plasma, and then carry out semiconductor machining.
Because the composition material of reaction chamber is generally aluminium, although surface treatment (being generally anodized) has been done on the reaction chamber surface, still can by with chamber in plasma react, cause the damage of equipment part or the deposition of polymer.Therefore, need in etching process, confine a plasma in certain certain zone, vacuum is separated with plasma.
In the prior art, generally in reaction chamber, add an air exhaust loop, confine a plasma in certain zone.
As shown in Figure 1; plasma arc processing apparatus of the prior art; comprise reaction cavity 9; the liner 4 of protection cavity inner wall; in reaction cavity 9 inside electrostatic chuck 8 is arranged; be used for supporting pending substrate, by the air exhaust loop 5 that is connected with liner 4 internal cavities of reaction cavity 9 be divided into two parts, i.e. reaction chamber 10 and vacuum suction chamber 11.Air exhaust loop 5 is connected with reaction cavity 9 by liner 4, makes plasma be limited in the reaction chamber 10.
As Fig. 2, Fig. 3, shown in Figure 4, on the air exhaust loop 5 of the prior art, be provided with clear opening 1 and blind hole 2, clear opening 1 can be a cylindrical hole, it also can be bellmouth, the longitudinal axis of clear opening 1 is used to discharge reacted gas perpendicular to the plane of air exhaust loop 5, the air displacement that the quantity of adjusting blind hole 2 can be regulated whole air exhaust loop 5.
There is following shortcoming at least in above-mentioned prior art: the shield effectiveness of air exhaust loop 5 article on plasma bodies is relatively poor.
Summary of the invention
Good air exhaust loop and the plasma arc processing apparatus of shield effectiveness that the purpose of this invention is to provide a kind of article on plasma body.
The objective of the invention is to be achieved through the following technical solutions:
Air exhaust loop of the present invention comprises body, and described body is provided with a plurality of through holes, and described through hole has one section plane that favours described body in the vertical at least.
Plasma arc processing apparatus of the present invention comprises reaction cavity, is provided with above-mentioned air exhaust loop in the described reaction cavity, and described air exhaust loop is divided into reaction chamber and the chamber of bleeding with the internal cavities of described reaction cavity.
As seen from the above technical solution provided by the invention, air exhaust loop of the present invention and plasma arc processing apparatus are because the through hole on the body has one section plane that favours described body in the vertical at least.When the reaction chamber of plasma arc processing apparatus and bleed load onto this air exhaust loop between the chamber after, when bleeding, through hole article on plasma body has certain barrier effect, the shield effectiveness of article on plasma body is good.
Description of drawings
Fig. 1 is the structural representation of plasma arc processing apparatus of the prior art;
Fig. 2 is the planar structure schematic diagram of air exhaust loop of the prior art;
Fig. 3 is the part elevation cutaway view one of Fig. 2;
Fig. 4 is the part elevation cutaway view two of Fig. 2;
Fig. 5 is the planar structure schematic diagram of air exhaust loop of the present invention;
Fig. 6 is that the A-A of Fig. 5 is to partial sectional view one;
Fig. 7 is that the A-A of Fig. 5 is to partial sectional view two.
Embodiment
Air exhaust loop of the present invention, its preferable embodiment comprises body 12 as shown in Figure 5, body 12 is circular, body 12 is provided with a plurality of through holes 3, and through hole 3 has one section plane that favours body 12 in the vertical at least, that is to say that through hole 3 is not perpendicular to the straight hole on body 12 surfaces.
As shown in Figure 6, through hole 3 can be inclined hole, and the longitudinal axis of inclined hole favours the plane of body 12.
As shown in Figure 7, through hole 3 is the broken line hole, can be made up of two sections or multistage broken line.
Through hole 3 also can be hole, labyrinth, curved slot or L shaped hole or other hole etc., gets final product so long as not the straight hole perpendicular to body 12 surfaces.
The cross section of through hole 3 is circle, ellipse, Long Circle, triangle or trapezoidal, also can be polygonal hole etc.
The surface that this air exhaust loop contacts with plasma is provided with insulating coating, comprises that the upper surface of body 12 and the inner surface of through hole 3 can establish insulating coating, also can only establish insulating coating at the upper surface of body 12.
The material of insulating coating can be Y
2O
3Perhaps Al
2O
3, also can adopt anodized to the air exhaust loop surface.
The thickness of insulating coating is 50-350 μ m, can be 50,80,100,120,150,180,200,220,250,300,350 μ m etc.
Plasma arc processing apparatus of the present invention comprises reaction cavity, is provided with above-mentioned air exhaust loop in the reaction cavity, and air exhaust loop is divided into reaction chamber and the chamber of bleeding with the internal cavities of reaction cavity.
When the reaction chamber of plasma arc processing apparatus and bleed load onto this air exhaust loop between the chamber after, when bleeding chamber evacuation, gas in the reaction chamber enters the chamber of bleeding by through hole 3, and through hole 3 article on plasma bodies have certain barrier effect, and the shield effectiveness of article on plasma body is good.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (10)
1, a kind of air exhaust loop comprises body, and described body is provided with a plurality of through holes, it is characterized in that, described through hole has one section plane that favours described body in the vertical at least.
2, air exhaust loop according to claim 1 is characterized in that, described through hole is an inclined hole, and the longitudinal axis of described inclined hole favours the plane of described body.
3, air exhaust loop according to claim 1 is characterized in that, described through hole is hole, labyrinth, curved slot or broken line hole.
According to claim 1,2 or 3 described air exhaust loops, it is characterized in that 4, the cross section of described through hole is circle, ellipse, Long Circle, triangle or trapezoidal.
5, according to claim 1,2 or 3 described air exhaust loops, it is characterized in that the surface that this air exhaust loop contacts with plasma is provided with insulating coating.
6, air exhaust loop according to claim 5 is characterized in that, the material of described insulating coating is Y
2O
3Perhaps Al
2O
3
7, air exhaust loop according to claim 5 is characterized in that, described insulating coating is that anodized is adopted on the air exhaust loop surface.
8, air exhaust loop according to claim 5 is characterized in that, the thickness of described insulating coating is 50--350 μ m.
9, air exhaust loop according to claim 8 is characterized in that, the thickness of described insulating coating is 180-220 μ m.
10, a kind of plasma arc processing apparatus, comprise reaction cavity, it is characterized in that, be provided with each described air exhaust loop of claim 1 to 9 in the described reaction cavity, described air exhaust loop is divided into reaction chamber and the chamber of bleeding with the internal cavities of described reaction cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101770386A CN101431003A (en) | 2007-11-08 | 2007-11-08 | Exhaustion ring and plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101770386A CN101431003A (en) | 2007-11-08 | 2007-11-08 | Exhaustion ring and plasma processing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101431003A true CN101431003A (en) | 2009-05-13 |
Family
ID=40646307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101770386A Pending CN101431003A (en) | 2007-11-08 | 2007-11-08 | Exhaustion ring and plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101431003A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102467981A (en) * | 2010-11-10 | 2012-05-23 | 北京祝邦新技术研究所 | Dust-proof sound-absorption radiating element for instrument and meter equipment |
| CN103132054A (en) * | 2011-11-30 | 2013-06-05 | 理想能源设备(上海)有限公司 | Plasma processing device |
| CN108538745A (en) * | 2017-03-01 | 2018-09-14 | 北京北方华创微电子装备有限公司 | Reaction chamber |
| CN109072427A (en) * | 2016-03-25 | 2018-12-21 | 应用材料公司 | Chamber liner for high-temperature process |
| CN111383884A (en) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | Plasma confinement system and method |
-
2007
- 2007-11-08 CN CNA2007101770386A patent/CN101431003A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102467981A (en) * | 2010-11-10 | 2012-05-23 | 北京祝邦新技术研究所 | Dust-proof sound-absorption radiating element for instrument and meter equipment |
| CN103132054A (en) * | 2011-11-30 | 2013-06-05 | 理想能源设备(上海)有限公司 | Plasma processing device |
| CN103132054B (en) * | 2011-11-30 | 2016-01-13 | 理想能源设备(上海)有限公司 | Plasma processing apparatus |
| CN109072427A (en) * | 2016-03-25 | 2018-12-21 | 应用材料公司 | Chamber liner for high-temperature process |
| CN109072427B (en) * | 2016-03-25 | 2020-10-13 | 应用材料公司 | Chamber liner for high temperature processing |
| CN108538745A (en) * | 2017-03-01 | 2018-09-14 | 北京北方华创微电子装备有限公司 | Reaction chamber |
| CN111383884A (en) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | Plasma confinement system and method |
| CN111383884B (en) * | 2018-12-27 | 2023-03-10 | 中微半导体设备(上海)股份有限公司 | Plasma confinement system and method |
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| C12 | Rejection of a patent application after its publication | ||
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Open date: 20090513 |