CN101159236A - Method for reducing aluminum copper alloy aliquation article precipitation - Google Patents
Method for reducing aluminum copper alloy aliquation article precipitation Download PDFInfo
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- CN101159236A CN101159236A CNA2006101169309A CN200610116930A CN101159236A CN 101159236 A CN101159236 A CN 101159236A CN A2006101169309 A CNA2006101169309 A CN A2006101169309A CN 200610116930 A CN200610116930 A CN 200610116930A CN 101159236 A CN101159236 A CN 101159236A
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Abstract
The invention provides a method for reducing separation of aluminum-copper alloy segregate. The method adopts an annealing process to make a theta-phase aluminum-copper alloy segregated on crystal boundary of the aluminum-copper alloy overcome potential energy barrier and diffuse from the crystal boundary into an aluminum base, thereby effectively obviating the decrease of yield caused by the theta-phase aluminum-copper alloy in subsequent pattern wire process of aluminum-copper alloy layer.
Description
Technical field
The present invention relates to a kind of method of improving semiconductor technology aluminium copper lead rate of finished products, particularly a kind ofly be used for reducing aluminum-copper alloy layer and separate out θ phase aluminum bronze compound, to improve the method for aluminium copper lead rate of finished products.
Background technology
In semiconductor technology, need millions of even billions of transistors in the chip be interconnected by metal wire, this is exactly the conductor structure of chip as complex network mazy.Along with the development of integrated circuit technique, promote for continuing the long-pending integrated level of IC, increase the speed and the function of assembly running, according to the prediction of Moore's Law (Moore ' s Law), approximately with 18 months number of transistors that just can in identical chips, double.
Aluminium is a kind of metal of extensive use in integrated circuit, advantages such as it has that resistance coefficient is low, the tack that can form a compact oxide, aluminium and silicon dioxide substrate voluntarily on the surface good, deposition and etching technique maturation, therefore be used in nearly 30 years of the time of semiconductor technology, the material that still has most technology to use aluminium to connect so far as metal.But, increase along with integration, the aluminum conductor structure is thereupon during micro, restriction on electromigration material behaviors such as (Electromigration), the aluminum conductor live width can not cause new technology consequentiality as the shortening of the passage length of electric brilliant grid, comparatively common metal connecting line technology material changes adopts with deposition Solder for Al-Cu Joint Welding (Al-Cu) alloy, with aluminium is main component, and copper accounts for 0.5～2%, to be used for preventing electromigration.
But, the technological temperature of Al-zn-mg-cu alloy is near 300 ℃ the time, such temperature will cause oversaturated copper content with the aluminum bronze compound of θ phase separate out on crystal boundary with aluminium substrate in, make follow-uply when carrying out the pattern etched technology of this Al-zn-mg-cu alloy metal level, rate of finished products descends significantly.
Therefore the present invention is directed to the problems referred to above and propose a kind of method that aluminum copper alloy aliquation article is separated out that reduces, improve above-mentioned shortcoming.
Summary of the invention
Main purpose of the present invention is, a kind of method that aluminum copper alloy aliquation article is separated out that reduces is provided, it utilizes an extra annealing process to make to separate out and can obtain enough to spread kinetic energy in the θ of aluminium copper crystal boundary phase aluminium copper and diffuse in the chip again, and reduce when the aluminium copper metal level carried out the wire pattern etching the caused process failure of θ phase copper.
Another object of the present invention is to, a kind of method that aluminum copper alloy aliquation article is separated out that reduces is provided, it can effectively improve the rate of finished products of using the aluminium copper lead, and and then reduction technology cost.
For reaching above-mentioned purpose, the present invention adopts and gives technical scheme:
A kind ofly reduce the method that aluminum copper alloy aliquation article is separated out, wherein this aluminium copper metal level is as the metal carbonyl conducting layer of semiconductor subassembly, the wafer that this method will deposit the aluminum bronze compound layer is inserted one and is connected with in the process tool of nitrogen or helium and carries out an annealing in process, so that the θ phase aluminum bronze compound of segregation on crystal boundary diffuses in the aluminium substrate once more.
The present invention utilizes annealing in process to make former segregation in the θ of aluminium copper crystal boundary phase aluminium copper, to obtain enough propagation energies, and copper ion is diffused in the lattice substrate again, and then significantly reduce the rate of finished products situation on the low side that is caused because of θ phase aluminium copper on the crystal boundary in the prior art.
Further specify the present invention below in conjunction with drawings and Examples.
Description of drawings
Fig. 1 is the phasor of aluminium copper.
Fig. 2 to Fig. 4 is a crystal phase structure schematic diagram of the present invention, is used for illustrating the structural change of crystalline phase when implementing processing step of the present invention.
Label declaration
10 substrates
12 copper atoms
14 θ phase aluminium coppers
16 crystal boundaries
Embodiment
The method that a kind of θ of reduction phase aluminum copper alloy aliquation article is separated out, it utilizes an annealing in process that the aluminium copper metal level as lead is carried out heat treatment once more, obtains enough heat energy in the aluminium copper of lattice position and spreads once more and make because temperature is reduced to the following and segregation of solid solubility temperature.
When being lead with the aluminium copper compound metal layer, its processing step system utilizes chemical vapor deposition (CVD), physical vapor deposition (PVD) or Improvement type physical vaporous deposition elder generation deposition of aluminum copper alloy compound metal layer on a wafer, and can be the making of having finished necessary assembly such as grid, isolation structure etc. this moment on the wafer.Yet, no matter be to utilize chemical meteorology deposition, physical vapour deposition (PVD) or Improvement type physical vaporous deposition, because at the processing step more than 400 ℃, can cause silicon to diffuse into aluminium, the space that aluminium also can backfill silicon be carried over because of diffusion, therefore technological temperature often maintains under 300 ℃, but such technological temperature will make the aluminium copper that is deposited on the wafer there is no quench cooled to room temperature reaches super saturated solid solution, but then the aluminium copper compound of separating out the θ phase on crystal boundary, see also shown in Figure 1, it is the phasor of aluminium copper, can be found to the temperature of such processing easily by phasor, make copper account for 0.5～2% Al-zn-mg-cu alloy metal carbonyl conducting layer by the aluminium copper of script solid solution because of 300 ℃ of temperature reduction technology treatment temperatures, surpass in the copper content of solidus (solvus line), segregation is in crystal boundary or substrate, and grow up, so will cause follow-up when carrying out aluminium copper conductor layer pattern etched, because of the aluminium copper compound of θ phase can't remove in an etchant, and produce the not good situation of rate of finished products.
Therefore, the present invention places in the boiler tube to finish the wafer of deposited copper Al-alloy metal layer, feeds nitrogen or helium and anneals under 400 ℃ of temperature environments, and the transformation of its crystalline texture sees also Fig. 2 to Fig. 4.At first, aluminium copper crystalline phase figure behind the albronze layer metal deposition as shown in Figure 2 copper ion 12 solid solutions this moment in aluminium substrate 10, but technological temperature belongs to the environment a little less than 300 ℃ because continue, therefore the aluminium copper compound 14 of θ phase gradually segregation on crystal boundary 16, as shown in Figure 3, continue and carry out annealing (annealing) technology, with wafer to going in the single wafer process tool (for example boiler tube), and feed nitrogen or helium is annealed under 400 ℃ of temperature environments, make segregation in the θ of crystal boundary phase aluminium copper 14, obtaining enough kinetic energy diffuses in the lattice substrate 10, the aluminium copper 14 of its θ phase will increase along with diffusing into intracell copper 12 atomic quantities, and dwindle gradually, form crystalline phase as shown in Figure 4, carrying out the aluminium copper Patternized technique subsequently, this moment is because the aluminium copper of θ phase reduces mutually relatively, and the etch process that can effectively avoid the aluminium copper phase because of the θ phase to be caused lost efficacy.
In sum, the method that reduction aluminum copper alloy aliquation article provided by the invention is separated out, utilize annealing in process to make former segregation in the θ of aluminium copper crystal boundary phase aluminium copper, to obtain enough propagation energies, and copper ion is diffused in the lattice substrate again, and then significantly reduce the rate of finished products situation on the low side that is caused because of θ phase aluminium copper on the crystal boundary in the prior art.
Above-described only is a preferred embodiment of the present invention; be not to be used for limiting scope of the invention process; therefore all equivalent variations and modifications of being done according to the described shape of the present patent application claim, structure, feature and spirit all should be encompassed in the scope of patent protection of the present invention.
Claims (5)
1. one kind is reduced the method that aluminum copper alloy aliquation article is separated out, it is characterized in that: this aluminum bronze series of compounds is as the metal carbonyl conducting layer of semiconductor subassembly, this method system wafer of deposition of aluminum copper compound inserts one and is connected with in the process tool of nitrogen or helium and carries out an annealing in process, so that the θ phase aluminum bronze compound of segregation on crystal boundary diffuses in the aluminium substrate once more.
2. the method that reduction aluminum copper alloy aliquation article as claimed in claim 1 is separated out is characterized in that: a plurality of grids, isolation structure assembly are arranged on this wafer.
3. the method that reduction aluminum copper alloy aliquation article as claimed in claim 1 is separated out is characterized in that: this copper aluminium compound is deposited on the suprabasil method of this semiconductor can be chemical vapor deposition, physical vapour deposition (PVD) or Improvement type physical vaporous deposition.
4. the method that reduction aluminum copper alloy aliquation article as claimed in claim 1 is separated out is characterized in that: this annealing in process temperature is 400 ℃.
5. the method that reduction aluminum copper alloy aliquation article as claimed in claim 1 is separated out is characterized in that: this process tool is a boiler tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101169309A CN101159236A (en) | 2006-10-08 | 2006-10-08 | Method for reducing aluminum copper alloy aliquation article precipitation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101169309A CN101159236A (en) | 2006-10-08 | 2006-10-08 | Method for reducing aluminum copper alloy aliquation article precipitation |
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| Publication Number | Publication Date |
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| CN101159236A true CN101159236A (en) | 2008-04-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CNA2006101169309A Pending CN101159236A (en) | 2006-10-08 | 2006-10-08 | Method for reducing aluminum copper alloy aliquation article precipitation |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109273350A (en) * | 2018-09-11 | 2019-01-25 | 上海华虹宏力半导体制造有限公司 | The manufacturing method of metallic film |
| CN115565947A (en) * | 2022-11-14 | 2023-01-03 | 广州粤芯半导体技术有限公司 | Annealing treatment method and annealing control apparatus |
-
2006
- 2006-10-08 CN CNA2006101169309A patent/CN101159236A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109273350A (en) * | 2018-09-11 | 2019-01-25 | 上海华虹宏力半导体制造有限公司 | The manufacturing method of metallic film |
| CN109273350B (en) * | 2018-09-11 | 2020-09-29 | 上海华虹宏力半导体制造有限公司 | Method for producing metal thin film |
| CN115565947A (en) * | 2022-11-14 | 2023-01-03 | 广州粤芯半导体技术有限公司 | Annealing treatment method and annealing control apparatus |
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