CN100520413C - Combined micro-accelerometer - Google Patents
Combined micro-accelerometer Download PDFInfo
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- CN100520413C CN100520413C CNB2007100615720A CN200710061572A CN100520413C CN 100520413 C CN100520413 C CN 100520413C CN B2007100615720 A CNB2007100615720 A CN B2007100615720A CN 200710061572 A CN200710061572 A CN 200710061572A CN 100520413 C CN100520413 C CN 100520413C
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Abstract
This invention relates to one micro speeder for normal bullet process anti-high load compound meter, which comprises four sets of micro speeder units, wherein, the units are set by two times two array; two above rows pressure sensitive resistance is set along beam length direction; down two sets of micro speeders pressure resistance along fix beam width direction; each micro speeder unit frame is of one integral one.
Description
Technical field
The present invention relates to a kind of micro-acceleration gauge, specifically is to be used for conventional ammunition guidance anti high overload combined micro-accelerometer.
Background technology
Modern war is high-tech trial of strength, for adapting to the requirement of modern war, the strike degree of accuracy of armament systems, the utilization ratio of ammunition all require very high, only guarantee in war that ammunition has and accurately hit and efficiently injure ability, just can make the army can " no matter launch back " and " shift the emission back ", raising one's own side's battlefield viability.Simultaneously, in Modern World and political setting, it is essential when striking target, reduce the indirect damage that friendly troop and the common people are caused as much as possible.So precision guided weapon rising significantly of usage ratio in war become the inevitable of epoch, it is the product of new Military Technical Revolution still not, and is leading and sing following hi-tech battlefield theme loudly.Conventional ammunition belongs to does not have the control bullet, is easy to be subjected to the restriction of environment, and hit rate is low, and this present situation has not satisfied the requirement of modern war.The present conventional ammunition stock's of China no control bullet quantity is very big, if use high-end technology present no control bullet is carried out intellectualized reconstruction, improves the precision strike capability of ammunition, the existence life-span that just can effectively improve present China magazine.
External MEMS technical research starting is morning, and the silicon technology of inertial manufacture is more advanced.External aspect the development of acceleration transducer, mainly contain four types: pressure resistance type, condenser type, piezoelectric type and tunnel type.Just begun the development of micromechanics piezoresistive accelerometer as far back as Roylance in 1979 and Angell, the technology that is adopted is mainly KOH corrosion bulk silicon technological, single cantilever beam+mass block structure, the technical indicator that reaches is: full range is ± 200g that sensitivity is 50 μ V/ (gV
Supply), off-axis sensitivity is 10%, and the temperature coefficient of piezoresistive effect is-0.2～0.3%/℃ (being that sensitivity is to the variation of temperature value), and resonance frequency is 2330Hz.The piezoresistive accelerometer of various structures occurs in succession subsequently, and has increased self-checking function and integrated CMOS circuit, and direction of measurement also develops to the multiaxis integral measuring gradually from single shaft.Several companies commercialization of production micromechanics piezoresistive accelerometers such as now existing ENDEVCO, SILICON DESIGNS.Accelerometer is applied to also obtain in the conventional ammunition inertial guidance substantial progress.For example, the 4th generation guided bomb " JDAM (JDAM) " that the U.S. succeeds in developing, on the active service aerial bomb, install corresponding guidance control package additional and form, have outside daytime/night, round-the-clock, the defence area, the projection back no matter, the Multi-target Attacking ability.This bomb uses in the war of NATO air attack the Federal Republic of Yugoslavia in 1999 first.Also has the 127mm of USN extended range projectile (ERGM), us army PGMM (PGMM), Britain 155mm multi-usage fin stabilization cartridge with ammunition etc.
At present, domesticly progressively conventional ammunition is being upgraded, adding guidance device, newly Yan Zhi all kinds of conventional ammunitions also develop to intellectuality, universalization, modularization.And this has also promoted the research of domestic little inertia device.
In same physical process, often exist a plurality of accekerations differ tens of times even up to ten thousand times to need to measure, for example, analyze the stressing conditions of body in the launch and flight process, both need to test the acceleration of up to ten thousand g in the emission process, also needed the acceleration of several g in the test flight process.Be difficult to satisfy the test request of whole process with same accelerometer in these occasions.
Summary of the invention
The present invention exists and differs a plurality of accekerations up to a hundred even thousands of times and need to measure in order to solve some physical processes, and micro-acceleration gauge can't be finished the problem of test in the prior art, provide a kind of high range that combines to 10000g, lower range is to the combined micro-accelerometer of 10g.
The present invention adopts following technical scheme to realize: combined micro-accelerometer, comprise four groups of micro-acceleration gauge unit, the micro-acceleration gauge unit comprises silicon structure layer and glass bottom, the silicon structure layer is made of framework, mass, clamped beam, has through hole on the framework, and mass is established at the through hole middle part, the mass both sides are connected with framework by two clamped beams respectively, each clamped beam is provided with two voltage dependent resistor (VDR)s, and silicon structure layer bottom has deep trouth, is provided with shallow slot between through hole and the deep trouth; The thickness of mass is less than the thickness of framework; The degree of depth of shallow slot equals the thickness difference of framework and mass; On the glass bottom of mass below electrode is set, on the glass bottom of deep trouth below pressure welding point is set, electrode is connected by the metal lead wire that is through in the shallow slot with pressure welding point; Described four groups of micro-acceleration gauge unit are for measuring the different micro-acceleration gauge unit of range, by 2 * 2 array structure settings, the voltage dependent resistor (VDR) of two groups of micro-acceleration gauge unit of last row is along the length direction setting of clamped beam, arrange of the Width setting of the voltage dependent resistor (VDR) of two groups of micro-acceleration gauge unit down, the as a whole structure of the framework of each micro-acceleration gauge unit along clamped beam.
Micro-acceleration gauge sensitive element applying silicon piezoresistive principles of the present invention adopts array piezoresistance sensor structure, and the overload structure of four kinds of measuring range acceleration signals of the test form with array is combined.Whole accelerometer adopts double-layer structure, above one deck be structural sheet, use single crystal silicon material to make by the bulk silicon micro mechanic process technology, comprise framework, mass and four clamped beams, a shallow slot of corrosion and a deep trouth on framework; The bottom that following one deck adopts glass material to make, its major function are to realize that the overload protection of accelerometer and detection are certainly had metal electrode, lead-in wire and pressure welding point on the bottom.Silicon-glass structure adopts electrostatic bonding.Microaccelerometer is made by the bulk silicon micro mechanic process technology, and the realization of its antijamming capability realizes that by processing technology main thought is: at silicon substrate upper heavy doping phosphonium ion, thereby form the n+ district; Top at each resistor stripe district (p-district) covers the layer of aluminum metal; Supply voltage positive input terminal in the design of n+ district on the substrate and bridge diagram (p+ that links to each other with resistor stripe holds) is linked together by fairlead, simultaneously aluminum metal on the resistor stripe and n+ district are also linked together by fairlead.
The present invention is 4 kinds of different acceleration signals of sensing simultaneously not only, and have good antijamming capability, higher anti-overload ability and self-checking function.In test and control system are used, has function comparatively flexibly: 1. can realize single-spot testing or control; 2. can realize multi-parameters test or multi-functional and many-sided control; 3. by the combination of different ranges, realize test and the integrated application of controlling.
Description of drawings
Fig. 1 is a structural representation of the present invention
Fig. 2 is the structural representation of micro-acceleration gauge unit
Fig. 3 is the structural representation of silicon structure layer
Fig. 4 is the structural representation of glass bottom
Fig. 5 is a resistance arrangenent diagram of the present invention
Among the figure: 1-micro-acceleration gauge unit, 2-silicon structure layer, 3-glass bottom, 4-framework, 5-mass, 6-clamped beam, 7-through hole, 8-voltage dependent resistor (VDR), 9-deep trouth, 10-shallow slot, 11-electrode, 12-metal lead wire, 13-pressure welding point
Embodiment
In conjunction with the accompanying drawings the specific embodiment of the present invention is described further, embodiment is used for illustrating of the present invention, rather than it is imposed any restrictions.
Combined micro-accelerometer comprises four groups of micro-acceleration gauge unit 1 as shown in Figure 1 and Figure 2.Described micro-acceleration gauge unit 1 comprises silicon structure layer 2 and glass bottom 3.
On the glass bottom 3 of mass 5 belows electrode 11 is set as described in Figure 4, on the glass bottom 3 of deep trouth 9 belows pressure welding point 13 is set, electrode 11 is connected by the metal lead wire 12 that is through in the shallow slot 10 with pressure welding point 13.
Four groups of micro-acceleration gauge unit 1 are by 2 * 2 array structure settings as shown in Figure 5, the voltage dependent resistor (VDR) 8 of two groups of micro-acceleration gauge unit of last row is along the length direction setting of clamped beam 6, arrange the Width setting of the voltage dependent resistor (VDR) 8 of two groups of micro-acceleration gauge unit along clamped beam 6 down, the framework 4 of each micro-acceleration gauge unit is whole.
Job operation of the present invention adopts the job operation of existing micro-acceleration gauge.The design of electric bridge is close with existing micro-acceleration method for designing, is that those skilled in the art can easily be known from prior art.
Embodiment: the range of four groups of micro-acceleration gauge unit is respectively 10g, 100g, 500g and 10000g.In order to improve device performance to greatest extent and to reduce design, difficulty of processing, the mass of each unit equates with the thickness of clamped beam in this array.The width of clamped beam is respectively 80um, 100um, 190um, 700um in 10g, 100g, 500g and the 10000g micro-acceleration unit, and the length of clamped beam is respectively 650um, 650um, 500um, 500um.
Claims (1)
1, a kind of combined micro-accelerometer, comprise four groups of micro-acceleration gauge unit (1), micro-acceleration gauge unit (1) comprises silicon structure layer (2) and glass bottom (3), silicon structure layer (2) is by framework (4), mass (5), clamped beam (6) constitutes, have through hole (7) on the framework (4), mass (5) is established at through hole (7) middle part, mass (5) both sides are connected with framework (4) by two clamped beams (6) respectively, each clamped beam (6) is provided with two voltage dependent resistor (VDR)s (8), silicon structure layer (2) bottom has deep trouth (9), is provided with shallow slot (10) between through hole (7) and the deep trouth (9); The thickness of mass (5) is less than the thickness of framework (4); The degree of depth of shallow slot (10) equals the thickness difference of framework (4) and mass (5); On the glass bottom (3) of mass (5) below electrode (11) is set, on the glass bottom (3) of deep trouth (9) below pressure welding point (13) is set, electrode (11) is connected by the metal lead wire (12) that is through in the shallow slot (10) with pressure welding point (13), it is characterized in that described four groups of micro-acceleration gauge unit (1) are for measuring the different micro-acceleration gauge unit of range, by 2 * 2 array structure settings, the voltage dependent resistor (VDR) (8) of two groups of micro-acceleration gauge unit of last row is along the length direction setting of clamped beam (6), arrange of the Width setting of the voltage dependent resistor (VDR) (8) of two groups of micro-acceleration gauge unit down, the as a whole structure of the framework of each micro-acceleration gauge unit (4) along clamped beam (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100615720A CN100520413C (en) | 2007-03-06 | 2007-03-06 | Combined micro-accelerometer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100615720A CN100520413C (en) | 2007-03-06 | 2007-03-06 | Combined micro-accelerometer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101017180A CN101017180A (en) | 2007-08-15 |
| CN100520413C true CN100520413C (en) | 2009-07-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100615720A Expired - Fee Related CN100520413C (en) | 2007-03-06 | 2007-03-06 | Combined micro-accelerometer |
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| CN (1) | CN100520413C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102193002A (en) * | 2010-03-11 | 2011-09-21 | 苏州敏芯微电子技术有限公司 | Acceleration sensor and manufacturing method thereof |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102425980B (en) * | 2011-09-15 | 2014-07-02 | 北京理工大学 | Control method for realizing overload autopilot by using accelerometer |
| CN102866262B (en) * | 2012-09-13 | 2014-04-16 | 中北大学 | Array type single-chip integrated digital microaccelerometer |
| CN102928622B (en) * | 2012-10-17 | 2014-03-05 | 中北大学 | Beam island tower shaped piezoresistive type three-axis micro-electro-mechanical system (MEMS) high-range acceleration sensor array |
| CN114113680B (en) * | 2021-12-17 | 2024-05-14 | 上海凸申科技有限公司 | Piezoelectric film acceleration sensor |
-
2007
- 2007-03-06 CN CNB2007100615720A patent/CN100520413C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102193002A (en) * | 2010-03-11 | 2011-09-21 | 苏州敏芯微电子技术有限公司 | Acceleration sensor and manufacturing method thereof |
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| CN101017180A (en) | 2007-08-15 |
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