CN100478781C - 蚀刻方法和用于形成蚀刻保护层的组合物 - Google Patents
蚀刻方法和用于形成蚀刻保护层的组合物 Download PDFInfo
- Publication number
- CN100478781C CN100478781C CNB028179552A CN02817955A CN100478781C CN 100478781 C CN100478781 C CN 100478781C CN B028179552 A CNB028179552 A CN B028179552A CN 02817955 A CN02817955 A CN 02817955A CN 100478781 C CN100478781 C CN 100478781C
- Authority
- CN
- China
- Prior art keywords
- water
- protection layer
- composition
- etch protection
- etch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 67
- 238000005530 etching Methods 0.000 title claims abstract description 65
- 239000011241 protective layer Substances 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 41
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 33
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 239000011347 resin Substances 0.000 claims abstract description 26
- 238000000576 coating method Methods 0.000 claims abstract description 23
- 239000011248 coating agent Substances 0.000 claims abstract description 19
- 239000003960 organic solvent Substances 0.000 claims abstract description 14
- 239000002904 solvent Substances 0.000 claims abstract description 9
- -1 propoxyl group Chemical group 0.000 claims description 44
- 239000000126 substance Substances 0.000 claims description 19
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 16
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 15
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 13
- 239000002253 acid Substances 0.000 claims description 11
- 239000000178 monomer Substances 0.000 claims description 10
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000004132 cross linking Methods 0.000 claims description 9
- VVJKKWFAADXIJK-UHFFFAOYSA-N Allylamine Chemical compound NCC=C VVJKKWFAADXIJK-UHFFFAOYSA-N 0.000 claims description 8
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 claims description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- 229920001807 Urea-formaldehyde Polymers 0.000 claims description 6
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 5
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 4
- UNHTXHGQQCZHEI-UHFFFAOYSA-N 2-n-butoxy-2-n-methyl-1,3,5-triazine-2,4,6-triamine Chemical compound CCCCON(C)C1=NC(N)=NC(N)=N1 UNHTXHGQQCZHEI-UHFFFAOYSA-N 0.000 claims description 4
- CBVALDDWDONNQV-UHFFFAOYSA-N 2-n-ethoxy-2-n-methyl-1,3,5-triazine-2,4,6-triamine Chemical compound CCON(C)C1=NC(N)=NC(N)=N1 CBVALDDWDONNQV-UHFFFAOYSA-N 0.000 claims description 4
- CTRPRMNBTVRDFH-UHFFFAOYSA-N 2-n-methyl-1,3,5-triazine-2,4,6-triamine Chemical compound CNC1=NC(N)=NC(N)=N1 CTRPRMNBTVRDFH-UHFFFAOYSA-N 0.000 claims description 4
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical class OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 claims description 4
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 claims description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 4
- 229940116333 ethyl lactate Drugs 0.000 claims description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 4
- XJRBAMWJDBPFIM-UHFFFAOYSA-N methyl vinyl ether Chemical compound COC=C XJRBAMWJDBPFIM-UHFFFAOYSA-N 0.000 claims description 4
- AWMNXQXKGOSXDN-GORDUTHDSA-N (e)-ethylideneurea Chemical compound C\C=N\C(N)=O AWMNXQXKGOSXDN-GORDUTHDSA-N 0.000 claims description 3
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 claims description 3
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 claims description 3
- CRUOYHLEWHYSMG-UHFFFAOYSA-N C(=O)O.C(C)=NC(=O)N Chemical compound C(=O)O.C(C)=NC(=O)N CRUOYHLEWHYSMG-UHFFFAOYSA-N 0.000 claims description 3
- VGGLHLAESQEWCR-UHFFFAOYSA-N N-(hydroxymethyl)urea Chemical compound NC(=O)NCO VGGLHLAESQEWCR-UHFFFAOYSA-N 0.000 claims description 3
- YGCOKJWKWLYHTG-UHFFFAOYSA-N [[4,6-bis[bis(hydroxymethyl)amino]-1,3,5-triazin-2-yl]-(hydroxymethyl)amino]methanol Chemical compound OCN(CO)C1=NC(N(CO)CO)=NC(N(CO)CO)=N1 YGCOKJWKWLYHTG-UHFFFAOYSA-N 0.000 claims description 3
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 claims description 3
- 229940035423 ethyl ether Drugs 0.000 claims description 3
- 150000007974 melamines Chemical class 0.000 claims description 3
- 229940057867 methyl lactate Drugs 0.000 claims description 3
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical compound C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 claims description 3
- QUBQYFYWUJJAAK-UHFFFAOYSA-N oxymethurea Chemical compound OCNC(=O)NCO QUBQYFYWUJJAAK-UHFFFAOYSA-N 0.000 claims description 3
- 229950005308 oxymethurea Drugs 0.000 claims description 3
- 239000004971 Cross linker Substances 0.000 claims 4
- 239000004202 carbamide Substances 0.000 claims 2
- 229940093499 ethyl acetate Drugs 0.000 claims 2
- 150000002191 fatty alcohols Chemical class 0.000 claims 2
- 239000011259 mixed solution Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 abstract description 13
- 239000003431 cross linking reagent Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 81
- 229920002554 vinyl polymer Polymers 0.000 description 16
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 238000011161 development Methods 0.000 description 12
- 238000002360 preparation method Methods 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 229920000877 Melamine resin Polymers 0.000 description 8
- 230000003014 reinforcing effect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000004640 Melamine resin Substances 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 238000001914 filtration Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 208000034189 Sclerosis Diseases 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229960004063 propylene glycol Drugs 0.000 description 4
- 235000013772 propylene glycol Nutrition 0.000 description 4
- 150000003440 styrenes Chemical class 0.000 description 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 3
- BLRJSXFWDNMKQT-UHFFFAOYSA-N 2-n-methoxy-1,3,5-triazine-2,4,6-triamine Chemical compound CONC1=NC(N)=NC(N)=N1 BLRJSXFWDNMKQT-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZUQAPLKKNAQJAU-UHFFFAOYSA-N acetylenediol Chemical compound OC#CO ZUQAPLKKNAQJAU-UHFFFAOYSA-N 0.000 description 3
- 125000004183 alkoxy alkyl group Chemical group 0.000 description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000003618 dip coating Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 239000011342 resin composition Substances 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- 125000003504 2-oxazolinyl group Chemical group O1C(=NCC1)* 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 2
- 229930192627 Naphthoquinone Natural products 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 2
- 229920000180 alkyd Polymers 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229920003180 amino resin Polymers 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- YXOGSLZKOVPUMH-UHFFFAOYSA-N ethene;phenol Chemical compound C=C.OC1=CC=CC=C1 YXOGSLZKOVPUMH-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 125000000555 isopropenyl group Chemical group [H]\C([H])=C(\*)C([H])([H])[H] 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000001455 metallic ions Chemical class 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 150000002791 naphthoquinones Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229940124530 sulfonamide Drugs 0.000 description 2
- 150000003456 sulfonamides Chemical class 0.000 description 2
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 2
- 238000010023 transfer printing Methods 0.000 description 2
- 150000003672 ureas Chemical class 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- 238000012800 visualization Methods 0.000 description 2
- SHMWGXIEPCHLGC-UHFFFAOYSA-N (4-ethenylphenyl)-phenylmethanone Chemical compound C1=CC(C=C)=CC=C1C(=O)C1=CC=CC=C1 SHMWGXIEPCHLGC-UHFFFAOYSA-N 0.000 description 1
- AUBIKQOPRLRIHL-UHFFFAOYSA-N 1-(butoxymethyl)-4-ethenylbenzene Chemical compound CCCCOCC1=CC=C(C=C)C=C1 AUBIKQOPRLRIHL-UHFFFAOYSA-N 0.000 description 1
- WGGLDBIZIQMEGH-UHFFFAOYSA-N 1-bromo-4-ethenylbenzene Chemical compound BrC1=CC=C(C=C)C=C1 WGGLDBIZIQMEGH-UHFFFAOYSA-N 0.000 description 1
- QOVCUELHTLHMEN-UHFFFAOYSA-N 1-butyl-4-ethenylbenzene Chemical compound CCCCC1=CC=C(C=C)C=C1 QOVCUELHTLHMEN-UHFFFAOYSA-N 0.000 description 1
- IZYHZMFAUFITLK-UHFFFAOYSA-N 1-ethenyl-2,4-difluorobenzene Chemical compound FC1=CC=C(C=C)C(F)=C1 IZYHZMFAUFITLK-UHFFFAOYSA-N 0.000 description 1
- WHFHDVDXYKOSKI-UHFFFAOYSA-N 1-ethenyl-4-ethylbenzene Chemical compound CCC1=CC=C(C=C)C=C1 WHFHDVDXYKOSKI-UHFFFAOYSA-N 0.000 description 1
- UAJRSHJHFRVGMG-UHFFFAOYSA-N 1-ethenyl-4-methoxybenzene Chemical compound COC1=CC=C(C=C)C=C1 UAJRSHJHFRVGMG-UHFFFAOYSA-N 0.000 description 1
- QQHQTCGEZWTSEJ-UHFFFAOYSA-N 1-ethenyl-4-propan-2-ylbenzene Chemical compound CC(C)C1=CC=C(C=C)C=C1 QQHQTCGEZWTSEJ-UHFFFAOYSA-N 0.000 description 1
- UVHXEHGUEKARKZ-UHFFFAOYSA-N 1-ethenylanthracene Chemical compound C1=CC=C2C=C3C(C=C)=CC=CC3=CC2=C1 UVHXEHGUEKARKZ-UHFFFAOYSA-N 0.000 description 1
- OSSNTDFYBPYIEC-UHFFFAOYSA-N 1-ethenylimidazole Chemical compound C=CN1C=CN=C1 OSSNTDFYBPYIEC-UHFFFAOYSA-N 0.000 description 1
- UGMRKNAZEKUAQS-UHFFFAOYSA-N 1-ethenylphenanthrene Chemical compound C1=CC2=CC=CC=C2C2=C1C(C=C)=CC=C2 UGMRKNAZEKUAQS-UHFFFAOYSA-N 0.000 description 1
- WPMHMYHJGDAHKX-UHFFFAOYSA-N 1-ethenylpyrene Chemical compound C1=C2C(C=C)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 WPMHMYHJGDAHKX-UHFFFAOYSA-N 0.000 description 1
- IGGDKDTUCAWDAN-UHFFFAOYSA-N 1-vinylnaphthalene Chemical compound C1=CC=C2C(C=C)=CC=CC2=C1 IGGDKDTUCAWDAN-UHFFFAOYSA-N 0.000 description 1
- ZWNMRZQYWRLGMM-UHFFFAOYSA-N 2,5-dimethylhexane-2,5-diol Chemical compound CC(C)(O)CCC(C)(C)O ZWNMRZQYWRLGMM-UHFFFAOYSA-N 0.000 description 1
- JECYNCQXXKQDJN-UHFFFAOYSA-N 2-(2-methylhexan-2-yloxymethyl)oxirane Chemical compound CCCCC(C)(C)OCC1CO1 JECYNCQXXKQDJN-UHFFFAOYSA-N 0.000 description 1
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- SBYMUDUGTIKLCR-UHFFFAOYSA-N 2-chloroethenylbenzene Chemical compound ClC=CC1=CC=CC=C1 SBYMUDUGTIKLCR-UHFFFAOYSA-N 0.000 description 1
- XUDBVJCTLZTSDC-UHFFFAOYSA-N 2-ethenylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C=C XUDBVJCTLZTSDC-UHFFFAOYSA-N 0.000 description 1
- XGJZQNMUVTZITK-UHFFFAOYSA-N 2-n,2-n,4-n,4-n,6-n,6-n-hexamethoxy-1,3,5-triazine-2,4,6-triamine Chemical compound CON(OC)C1=NC(N(OC)OC)=NC(N(OC)OC)=N1 XGJZQNMUVTZITK-UHFFFAOYSA-N 0.000 description 1
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 1
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 1
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 1
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 1
- KFDVPJUYSDEJTH-UHFFFAOYSA-N 4-ethenylpyridine Chemical compound C=CC1=CC=NC=C1 KFDVPJUYSDEJTH-UHFFFAOYSA-N 0.000 description 1
- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical class OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 description 1
- LLHWSBXZXJXVPL-UHFFFAOYSA-N 6-(2-methylphenyl)-1,3,5-triazine-2,4-diamine Chemical compound CC1=CC=CC=C1C1=NC(N)=NC(N)=N1 LLHWSBXZXJXVPL-UHFFFAOYSA-N 0.000 description 1
- RWGSAMLIJGTMCH-UHFFFAOYSA-N C1(=CC=CC=C1)OCC.C=C Chemical compound C1(=CC=CC=C1)OCC.C=C RWGSAMLIJGTMCH-UHFFFAOYSA-N 0.000 description 1
- QDMMAJNKZYLYAC-UHFFFAOYSA-N C=C.C(CCCCC)C1=CC=CC=C1 Chemical compound C=C.C(CCCCC)C1=CC=CC=C1 QDMMAJNKZYLYAC-UHFFFAOYSA-N 0.000 description 1
- 241000370738 Chlorion Species 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- JVTAAEKCZFNVCJ-UHFFFAOYSA-M Lactate Chemical compound CC(O)C([O-])=O JVTAAEKCZFNVCJ-UHFFFAOYSA-M 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 241001597008 Nomeidae Species 0.000 description 1
- GSQALPUVJRSFNN-UHFFFAOYSA-N O(C1=CC=CC=C1)CCCC.C=C Chemical compound O(C1=CC=CC=C1)CCCC.C=C GSQALPUVJRSFNN-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- KVXNKFYSHAUJIA-UHFFFAOYSA-N acetic acid;ethoxyethane Chemical class CC(O)=O.CCOCC KVXNKFYSHAUJIA-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000001334 alicyclic compounds Chemical class 0.000 description 1
- 150000001346 alkyl aryl ethers Chemical class 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- IYRHBDVSMINOTQ-UHFFFAOYSA-N aniline;ethene Chemical compound C=C.NC1=CC=CC=C1 IYRHBDVSMINOTQ-UHFFFAOYSA-N 0.000 description 1
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Natural products C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- QXRUSZKJUVYKLM-UHFFFAOYSA-N butyl 4-ethenylbenzoate Chemical compound CCCCOC(=O)C1=CC=C(C=C)C=C1 QXRUSZKJUVYKLM-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 238000012940 design transfer Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- KXSGQVTXLQEQSA-UHFFFAOYSA-N ethene 1-phenylethanone Chemical compound C=C.CC(=O)C1=CC=CC=C1 KXSGQVTXLQEQSA-UHFFFAOYSA-N 0.000 description 1
- URCAYJXJXYLGTI-UHFFFAOYSA-N ethene fluorobenzene Chemical compound C=C.FC1=CC=CC=C1 URCAYJXJXYLGTI-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- QXLPXWSKPNOQLE-UHFFFAOYSA-N methylpentynol Chemical compound CCC(C)(O)C#C QXLPXWSKPNOQLE-UHFFFAOYSA-N 0.000 description 1
- 229960002238 methylpentynol Drugs 0.000 description 1
- UFWIBTONFRDIAS-UHFFFAOYSA-N naphthalene-acid Natural products C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 125000005931 tert-butyloxycarbonyl group Chemical group [H]C([H])([H])C(OC(*)=O)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Drying Of Semiconductors (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Polyurethanes Or Polyureas (AREA)
- Paints Or Removers (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001277600A JP4237430B2 (ja) | 2001-09-13 | 2001-09-13 | エッチング方法及びエッチング保護層形成用組成物 |
JP277600/2001 | 2001-09-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1555510A CN1555510A (zh) | 2004-12-15 |
CN100478781C true CN100478781C (zh) | 2009-04-15 |
Family
ID=19102105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028179552A Expired - Fee Related CN100478781C (zh) | 2001-09-13 | 2002-09-04 | 蚀刻方法和用于形成蚀刻保护层的组合物 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7141177B2 (zh) |
EP (1) | EP1429185B1 (zh) |
JP (1) | JP4237430B2 (zh) |
KR (1) | KR100884910B1 (zh) |
CN (1) | CN100478781C (zh) |
AT (1) | ATE431574T1 (zh) |
DE (1) | DE60232343D1 (zh) |
TW (1) | TW575790B (zh) |
WO (1) | WO2003025677A1 (zh) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4235466B2 (ja) * | 2003-02-24 | 2009-03-11 | Azエレクトロニックマテリアルズ株式会社 | 水溶性樹脂組成物、パターン形成方法及びレジストパターンの検査方法 |
JP4012480B2 (ja) * | 2003-03-28 | 2007-11-21 | Azエレクトロニックマテリアルズ株式会社 | 微細パターン形成補助剤及びその製造法 |
WO2005013011A1 (ja) | 2003-08-04 | 2005-02-10 | Fujitsu Limited | レジストパターン厚肉化材料、それを用いたレジストパターンの製造方法及び半導体装置の製造方法 |
JP4490228B2 (ja) | 2004-06-15 | 2010-06-23 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法 |
JP4718145B2 (ja) | 2004-08-31 | 2011-07-06 | 富士通株式会社 | 半導体装置及びゲート電極の製造方法 |
JP4679997B2 (ja) * | 2004-08-31 | 2011-05-11 | Azエレクトロニックマテリアルズ株式会社 | 微細パターン形成方法 |
JP4583860B2 (ja) | 2004-10-04 | 2010-11-17 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターンの形成方法、並びに、半導体装置及びその製造方法 |
US7595141B2 (en) * | 2004-10-26 | 2009-09-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
JP4676325B2 (ja) | 2005-02-18 | 2011-04-27 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法 |
KR20060095318A (ko) * | 2005-02-28 | 2006-08-31 | 삼성에스디아이 주식회사 | 전자 방출 소자와 이의 제조 방법 |
CN1702547B (zh) * | 2005-03-29 | 2010-04-07 | 中国科学院光电技术研究所 | 一种高精度灰度掩模制作方法 |
JP4566862B2 (ja) | 2005-08-25 | 2010-10-20 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法 |
JP4657899B2 (ja) | 2005-11-30 | 2011-03-23 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法 |
JP4675227B2 (ja) * | 2005-12-21 | 2011-04-20 | トヨタ自動車株式会社 | 凸部の頂面に被覆膜を形成する方法 |
JP4724073B2 (ja) | 2006-08-17 | 2011-07-13 | 富士通株式会社 | レジストパターンの形成方法、半導体装置及びその製造方法 |
JP4739150B2 (ja) | 2006-08-30 | 2011-08-03 | 富士通株式会社 | レジストカバー膜形成材料、レジストパターンの形成方法、電子デバイス及びその製造方法 |
JP4801550B2 (ja) | 2006-09-26 | 2011-10-26 | 富士通株式会社 | レジスト組成物、レジストパターンの形成方法、及び半導体装置の製造方法 |
JP5018307B2 (ja) | 2006-09-26 | 2012-09-05 | 富士通株式会社 | レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法 |
US7923200B2 (en) * | 2007-04-09 | 2011-04-12 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern comprising a lactam |
JP5069494B2 (ja) * | 2007-05-01 | 2012-11-07 | AzエレクトロニックマテリアルズIp株式会社 | 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法 |
JP2009295745A (ja) * | 2008-06-04 | 2009-12-17 | Toshiba Corp | 半導体装置の製造方法 |
US7745077B2 (en) * | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
JP5659872B2 (ja) | 2010-10-22 | 2015-01-28 | 富士通株式会社 | レジストパターン改善化材料、レジストパターンの形成方法、及び半導体装置の製造方法 |
JP5659873B2 (ja) | 2010-12-16 | 2015-01-28 | 富士通株式会社 | レジストパターン改善化材料、レジストパターンの形成方法、及び半導体装置の製造方法 |
JP5708071B2 (ja) | 2011-03-11 | 2015-04-30 | 富士通株式会社 | レジストパターン改善化材料、レジストパターンの形成方法、及び半導体装置の製造方法 |
PT3376528T (pt) * | 2015-11-09 | 2022-09-29 | Furukawa Electric Co Ltd | Fita de proteção de superfície de máscara integrada |
JP2018537703A (ja) | 2015-11-19 | 2018-12-20 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法 |
CN108267934B (zh) * | 2016-12-30 | 2021-03-30 | 臻鼎科技股份有限公司 | 水溶性感光树脂组合物、覆盖膜及电路板 |
DE112018003600A5 (de) * | 2017-07-14 | 2020-04-09 | Inficon Gmbh | Verfahren zum kontrollierten Abtragen einer Schutzschicht von einer Oberfläche eines Bauteils |
JP7026704B2 (ja) * | 2018-01-30 | 2022-02-28 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置およびエッチング液 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3666473A (en) | 1970-10-06 | 1972-05-30 | Ibm | Positive photoresists for projection exposure |
DE3170974D1 (en) * | 1981-02-16 | 1985-07-25 | Ibm | Method for increasing the resistance of a solid material surface against etching |
JPS57167360A (en) * | 1981-04-08 | 1982-10-15 | Kuraray Co Ltd | Vibration-damping paint |
US4677174A (en) * | 1986-04-21 | 1987-06-30 | American Colloid Company | Water absorbent styrene-acrylic acid copolymers |
US4687541A (en) * | 1986-09-22 | 1987-08-18 | Rockwell International Corporation | Dual deposition single level lift-off process |
JP2590342B2 (ja) * | 1986-11-08 | 1997-03-12 | 住友化学工業株式会社 | ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物 |
US4873176A (en) | 1987-08-28 | 1989-10-10 | Shipley Company Inc. | Reticulation resistant photoresist coating |
US5209768A (en) * | 1991-06-14 | 1993-05-11 | American Colloid Company | Method of improving sod growth |
JP2680508B2 (ja) * | 1992-06-05 | 1997-11-19 | 関西ペイント株式会社 | 常乾用水性塗料 |
US5547812A (en) | 1995-06-05 | 1996-08-20 | International Business Machines Corporation | Composition for eliminating microbridging in chemically amplified photoresists comprising a polymer blend of a poly(hydroxystyrene) and a copolymer made of hydroxystyrene and an acrylic monomer |
JP3071401B2 (ja) * | 1996-07-05 | 2000-07-31 | 三菱電機株式会社 | 微細パターン形成材料及びこれを用いた半導体装置の製造方法並びに半導体装置 |
TW329539B (en) | 1996-07-05 | 1998-04-11 | Mitsubishi Electric Corp | The semiconductor device and its manufacturing method |
JPH10120968A (ja) | 1996-08-28 | 1998-05-12 | Hitachi Chem Co Ltd | レジスト保護膜用樹脂組成物、レジスト保護膜及びこれを用いたパターン製造法 |
TW464791B (en) | 1996-09-30 | 2001-11-21 | Hoechst Celanese Corp | Bottom antireflective coatings containing an arylhydrazo dye |
TW372337B (en) * | 1997-03-31 | 1999-10-21 | Mitsubishi Electric Corp | Material for forming micropattern and manufacturing method of semiconductor using the material and semiconductor apparatus |
JP3189773B2 (ja) * | 1998-01-09 | 2001-07-16 | 三菱電機株式会社 | レジストパターン形成方法及びこれを用いた半導体装置の製造方法並びに半導体装置 |
JP3924910B2 (ja) | 1998-03-31 | 2007-06-06 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP3950584B2 (ja) | 1999-06-29 | 2007-08-01 | Azエレクトロニックマテリアルズ株式会社 | 水溶性樹脂組成物 |
JP2001109165A (ja) * | 1999-10-05 | 2001-04-20 | Clariant (Japan) Kk | パターン形成方法 |
-
2001
- 2001-09-13 JP JP2001277600A patent/JP4237430B2/ja not_active Expired - Fee Related
-
2002
- 2002-09-04 CN CNB028179552A patent/CN100478781C/zh not_active Expired - Fee Related
- 2002-09-04 KR KR1020047003748A patent/KR100884910B1/ko not_active IP Right Cessation
- 2002-09-04 US US10/487,658 patent/US7141177B2/en not_active Expired - Lifetime
- 2002-09-04 AT AT02762996T patent/ATE431574T1/de not_active IP Right Cessation
- 2002-09-04 WO PCT/JP2002/008962 patent/WO2003025677A1/ja active Application Filing
- 2002-09-04 EP EP02762996A patent/EP1429185B1/en not_active Expired - Lifetime
- 2002-09-04 DE DE60232343T patent/DE60232343D1/de not_active Expired - Lifetime
- 2002-09-10 TW TW91120572A patent/TW575790B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP4237430B2 (ja) | 2009-03-11 |
CN1555510A (zh) | 2004-12-15 |
DE60232343D1 (de) | 2009-06-25 |
US7141177B2 (en) | 2006-11-28 |
JP2003084457A (ja) | 2003-03-19 |
ATE431574T1 (de) | 2009-05-15 |
WO2003025677A1 (fr) | 2003-03-27 |
EP1429185B1 (en) | 2009-05-13 |
TW575790B (en) | 2004-02-11 |
EP1429185A4 (en) | 2006-06-07 |
US20040238486A1 (en) | 2004-12-02 |
KR100884910B1 (ko) | 2009-02-20 |
EP1429185A1 (en) | 2004-06-16 |
KR20040035782A (ko) | 2004-04-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100478781C (zh) | 蚀刻方法和用于形成蚀刻保护层的组合物 | |
TWI374342B (en) | Water soluble resin composition and method for pattern formation using the same | |
KR100707838B1 (ko) | 수용성 수지 조성물 및 이로 이루어진 미세 패턴 형성 재료 | |
JP4045180B2 (ja) | リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法 | |
CN101523296B (zh) | 精细图案形成方法及用于此法的抗蚀基板处理溶液 | |
CN101248391B (zh) | 含有乙烯基萘树脂衍生物的形成光刻用涂布型下层膜的组合物 | |
CN100410808C (zh) | 用于短波长成像的负性光致抗蚀剂 | |
JP4235466B2 (ja) | 水溶性樹脂組成物、パターン形成方法及びレジストパターンの検査方法 | |
CN101657511B (zh) | 用于在光致抗蚀剂图案上面涂覆的含内酰胺的组合物 | |
EP1223470A1 (en) | Method for forming pattern | |
JP2005352384A (ja) | 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法 | |
JPH09274319A (ja) | 化学増幅ポジ型レジスト材料 | |
CN103119105A (zh) | 用于从基片去除物质的包含至少一种单酰胺和/或至少一种二酰胺的聚合物或单体组合物及其使用方法 | |
EP0736809B1 (en) | Composition for anti-reflective coating on resist | |
JP2007148258A (ja) | レジスト組成物 | |
TWI471698B (zh) | 圖案形成方法及光阻組成物 | |
JP3787323B2 (ja) | ポジ型ホトレジスト塗布液及びそれを用いた表示素子用基材 | |
JP4647418B2 (ja) | レジスト組成物 | |
JP2002072481A (ja) | ポジ型感光性樹脂組成物 | |
JP6953403B2 (ja) | 高耐熱性レジスト組成物およびそれを用いたパターン形成方法 | |
JPH1184644A (ja) | ポジ型レジスト組成物及びこれを用いたパターンの形成方法 | |
KR100764637B1 (ko) | 산 가교가 가능한 패턴 미세화 조성물 및 이를 이용한 반도체 장치의 제조방법 | |
TW200900862A (en) | Thermally cured underlayer for lithographic application |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: AZ ELECTRON MATERIAL ( JAPAN )) CO., LTD. Free format text: FORMER OWNER: CLARIANT INTERNATIONAL LTD. Effective date: 20050318 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20050318 Address after: Tokyo, Japan, Japan Applicant after: AZ electronic materials (Japan) Co., Ltd. Address before: Mu Tengci, Switzerland Applicant before: Clariant International Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. Free format text: FORMER OWNER: AZ ELECTRONIC MATERIAL (JAPAN) CO., LTD. Effective date: 20120521 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120521 Address after: Tokyo, Japan, Japan Patentee after: AZ Electronic Materials (Japan) K. K. Address before: Tokyo, Japan, Japan Patentee before: AZ electronic materials (Japan) Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: MERCK PATENT GMBH Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. Effective date: 20150409 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150409 Address after: Darmstadt Patentee after: Merck Patent GmbH Address before: Tokyo, Japan, Japan Patentee before: AZ Electronic Materials (Japan) K. K. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090415 Termination date: 20190904 |
|
CF01 | Termination of patent right due to non-payment of annual fee |