CN100454485C - Reflective photomask blank, reflective photomask, and method for manufacturing semiconductor device using same - Google Patents
Reflective photomask blank, reflective photomask, and method for manufacturing semiconductor device using same Download PDFInfo
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- CN100454485C CN100454485C CNB2005800421781A CN200580042178A CN100454485C CN 100454485 C CN100454485 C CN 100454485C CN B2005800421781 A CNB2005800421781 A CN B2005800421781A CN 200580042178 A CN200580042178 A CN 200580042178A CN 100454485 C CN100454485 C CN 100454485C
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Abstract
It is aimed to improve the accuracy of testing when a pattern of a reflective photomask used for EUV lithography is examined by observing the reflectance contrast of a DUV light. Specifically disclosed is a reflective photomask blank wherein a multilayer reflective film (2) and a light absorptive laminate (4) are arranged on a substrate (1). The light absorptive laminate (4) is composed of a first light absorptive layer (41) with EUV light absorbing ability which contains tantalum and silicon, and a second light absorptive layer (42) with DUV light absorbing ability which is arranged on the first absorptive layer (41) and contains tantalum, silicon and at least one of nitrogen and oxygen.
Description
Technical field
The present invention relates to have used based on extreme ultraviolet be EUV (Extreme Ultra Violet) light, especially have the manufacture method of photolithographic semiconductor device of the light of grenz ray zone wavelength, be used for this reflective photomask and be used for the reflective photomask blank of this reflective photomask.
Background technology
Be accompanied by highly integrated in the semiconductor element in recent years, utilize the positive accelerated development of miniaturization of the pattern transfer of necessity that photoetching process carries out on the Si substrate.
(wavelength 248nm, the short wavelengthization of the light source in photoetching process 193nm) is more and more near the exposure limit to have used lamp source in the past (wavelength 365nm) and quasi-molecule laser source.Therefore, can carrying out especially, novel photolithographic establishment of the microfabrication below the 100nm becomes the task of top priority.
Therefore, developing more, the excimer laser in short wavelength zone is F
2The photoetching process of laser (wavelength 157nm).Yet, usually, because the size of the half-wavelength of exposure wavelength is the substantial development limit, even therefore in this case, also be the limit about 70nm.
Therefore, for example open described in the 2001-237174 communique as the spy, in recent years, having developed with the EUV light (wavelength 13nm) than the short wavelength with 10～15nm more than the order of magnitude of F2 laser is the EUV photoetching process of light source.
The refractive index of the material in the EUV light wavelength zone is for being slightly less than about 1.In this EUV photoetching process,, therefore use exposure based on the anacamptics system owing to the refractive optics system that can not use as using in the exposure source in the past.In addition, in EUV light wavelength zone, nearly all material all has high light absorption.Therefore,, do not use existing transmission-type photomask, and use reflective photomask as the pattern transfer photomask.Like this, in the EUV photoetching process, there were significant differences with existing exposure technique for optics system of using in exposure and photomask etc.
The reflective photomask that this EUV photoetching process is used is the material that obtains as described below: be arranged on the big mirror (speculum) of reflectivity in the EUV wavelength region may on smooth Si substrate or synthetic quartz substrate, carry out pattern processing to form by the light absorbing zone that the extra high heavy metal of the absorbability of EUV light is constituted according to the exposing patterns of expecting thereon again.
Mirror (speculum) at EUV light is made of the laminated reflective film that forms by the big material of combination refractive index difference.In reflective photomask, the pattern transfer of exposing patterns is carried out in the absorption region that is formed by the light absorbing zone pattern covers by the laminated reflective film surface and do not have light absorbing zone to expose the contrast of the EUV exposure reflectivity between the reflector space on laminated reflective film surface.
Usually, the inspection of the pattern that forms in the light absorbing zone is by being DUV (far ultraviolet) light about 190nm～260nm in the mask surface incident wavelength, detects its reverberation, and studies that the contrast of its reflectivity carries out.Specifically; before the pattern processing of light absorbing zone; protective layer as laminated reflective film; the buffer-layer surface that is provided with arbitrarily under light absorbing zone becomes reflector space; utilize contrast with the reflectivity of the absorption region that constitutes by the light absorbing zone surface after the pattern processing; at first carry out the inspection in the 1st stage, whether be carried out pattern-forming processing according to design to judge light absorbing zone.So, detect should etched light absorbing zone but do not have etched and remain on the resilient coating position (black defective) and should not etching and remain in the etched position of a part (defective in vain) of the light absorbing zone on the resilient coating.
Revise in the inspection in the 1st stage after the detected defective, remove resilient coating again, expose the laminated reflective film surface under the resilient coating, then the pattern that forms is carried out the final inspection in the 2nd stage on light absorbing zone.This final inspection is to be undertaken by the contrast of the reflectivity between the reflector space of observing the absorption region that is made of the light absorbing zone surface and being made of the laminated reflective film surface.In addition, also can not remove resilient coating sometimes, if but on the laminated reflective film surface filming of resilient coating arranged, then there is the tendency of the reflectivity reduction of laminated reflective film, therefore often remove resilient coating.
The DUV that utilizes in the 1st above-mentioned stage and the 2nd stage checks in the inspection of the light absorbing zone pattern that light carries out, by observe respectively that to have removed the buffer-layer surface of light absorbing zone with not removing residual light absorbing zone the light absorbing zone surface and removed that DUV light reflectivity contrast between the surperficial and light absorbing zone surface of the laminated reflective film of resilient coating carries out.Therefore, to check precision in order further improving, to be desirably in the inspection in the 1st stage, for buffer-layer surface and light absorbing zone surface, in the inspection in the 2nd stage, for laminated reflective film surface and light absorbing zone surface, the difference of the reflectivity of DUV inspection wavelength separately is bigger.
Summary of the invention
The present invention makes in order to improve above-mentioned EUV photoetching process, its objective is provides a kind of following reflective photomask: the DUV light exposure reflectivity in the EUV light exposure reflectivity when having the transfer printing of exposing patterns not only but also the pattern inspection of light absorption lamination is all enough low, can obtain the light absorption lamination of enough reflectivity contrasts with respect to reflector space, and can carry out high-precision inspection and high-precision mask pattern transfer printing.
In addition, the purpose of this invention is to provide a kind of reflective photomask blank that can be processed into following reflective photomask: the DUV light exposure reflectivity in the pattern inspection of EUV light when having not only mask pattern transfer printing exposure reflectivity but also light absorption lamination is all enough low, can obtain the light absorption lamination of enough reflectivity contrasts with respect to reflector space, and can carry out high-precision inspection and pattern with high precision transfer printing.
In addition, the purpose of this invention is to provide a kind of manufacture method that can carry out the semiconductor device of pattern with high precision transfer printing by EUV light.
The invention provides a kind of reflective photomask blank, it is characterized in that, described reflective photomask blank has at least: substrate; Be arranged on the laminated reflective film on this substrate; Comprise and be arranged on this laminated reflective film and contain the 1st light absorbing zone of tantalum and silicon and be layered on the 1st light absorbing zone and contain the light absorption lamination of the 2nd light absorbing zone of tantalum, silicon and nitrogen or oxygen.
In addition, the invention provides a kind of reflective photomask, it has: substrate; Be arranged on the laminated reflective film on this substrate; Comprise and be arranged on this laminated reflective film and contain the 1st light absorbing zone of tantalum and silicon and be layered on the 1st light absorbing zone and contain the light absorption lamination of the 2nd light absorbing zone of tantalum, silicon and nitrogen or oxygen, and this light absorption lamination is through pattern processing.
In addition, the invention provides a kind of manufacture method of semiconductor device, this method comprises following operation: to reflective photomask irradiation extreme ultraviolet, utilize its reverberation that the extreme ultraviolet that is arranged on the semiconductor substrate is exposed with resist layer, thereby pattern transferring, wherein said reflective photomask has: substrate; Be arranged on the laminated reflective film on this substrate; Comprise and be arranged on this laminated reflective film and contain the 1st light absorbing zone of tantalum and silicon and be layered on the 1st light absorbing zone and contain the light absorption lamination of the 2nd light absorbing zone of tantalum, silicon and nitrogen or oxygen, and this light absorption lamination is through pattern processing.
Description of drawings
Fig. 1 is the profile of an embodiment of expression reflective photomask blank of the present invention.
Fig. 2 is the profile of an embodiment of expression reflective photomask.
Fig. 3 is the figure of expression about an example of the X ray diffracting data of the alloy film that is made of Ta and Si.
Fig. 4 is the figure of expression about the relation of the extinction coefficient of TaSi class material and square resistance (sheetresistance).
Fig. 5 is the figure of expression about the relation of the extinction coefficient of TaSi class material and square resistance.
Fig. 6 is the figure of expression about the relation of the extinction coefficient of TaSi class material and square resistance.
Fig. 7 is the figure of expression about the relation of the extinction coefficient of TaSi class material and square resistance.
Fig. 8 is the figure of expression about the relation of the extinction coefficient of TaSi class material and square resistance.
Fig. 9 is the figure of relation of the thickness of expression extinction coefficient of the 1st light absorbing zone and the 2nd light absorbing zone.
Figure 10 is the constructed profile of manufacturing process of an example of the reflective photomask that relates to of expression the 1st viewpoint of the present invention.
Figure 11 is the constructed profile of manufacturing process of an example of the reflective photomask that relates to of expression the 1st viewpoint of the present invention.
Figure 12 is the constructed profile of manufacturing process of an example of the reflective photomask that relates to of expression the 1st viewpoint of the present invention.
Figure 13 is the constructed profile of manufacturing process of an example of the reflective photomask that relates to of expression the 1st viewpoint of the present invention.
Figure 14 is the figure of the spectral reflectance characteristic of the light absorption lamination of expression when changing the thickness of the 1st light absorbing zone and the 2nd light absorbing zone.
Figure 15 is the figure of the spectral reflectance characteristic of the light absorption lamination of expression when changing the thickness of the 1st light absorbing zone and the 2nd light absorbing zone.
Embodiment
Reflective photomask blank of the present invention has substrate, be arranged on the laminated reflective film on the substrate and be arranged on light absorption lamination on this laminated reflective film, and this light absorption lamination has following stepped construction: comprise the 1st light absorbing zone that contains tantalum and silicon and be layered on the 1st light absorbing zone and contain the 2nd light absorbing zone of tantalum, silicon and nitrogen.
Reflective photomask blank is to be processed into the preceding goods of reflective photomask, and the light absorption lamination did not also carry out pattern processing according to the exposing patterns of transfer printing.
Reflective photomask of the present invention has same formation with above-mentioned reflective photomask blank except the light absorption lamination having been carried out pattern processing.
According to the present invention, the light absorption lamination that uses in reflective photomask blank and the reflective photomask is owing to comprise at least to low the 1st light absorbing zone of the reflectivity of EUV light exposure with to the reflectivity of EUV light exposure and to the lamination of the 2nd low light absorbing zone of the reflectivity of DUV light exposure, so not only when utilizing EUV light to carry out the pattern transfer exposure, and when utilizing DUV light to check exposure, all can obtain good reflectivity contrast with respect to reflector space.Thus, the inspection precision of reflective photomask and pattern transfer precision become good.
In addition, the manufacture method of semiconductor device of the present invention comprises above-mentioned reflective photomask irradiation extreme ultraviolet (EUV) light, utilizes its reverberation that the EUV light that is arranged on the semiconductor substrate is exposed with resist layer, thus the operation of pattern transferring.
In addition, then in developing procedure, remove the resist layer of unnecessary part, after forming the pattern of resist layer on the substrate, with the pattern of this resist layer as mask, machined layer is carried out etch processes, then, remove the pattern of resist layer, thus can be on substrate the pattern of the faithful to optical mask pattern of transfer printing.Obtain semiconductor device thus.
Below, with reference to accompanying drawing, the present invention is specifically described.
Fig. 1 is the profile of an embodiment of expression reflective photomask blank of the present invention, and in addition, Fig. 2 is the profile of an embodiment of expression reflective photomask.
As shown in Figure 1, reflective photomask blank 10 of the present invention has the structure that stacks gradually laminated reflective film 2, resilient coating 3 and light absorption lamination 4 on substrate 1.Light absorption lamination 4 has on resilient coating 3 this stacked 2 layers structure of the 2nd light absorbing zone 42 of the 1st light absorbing zone 41 that is provided with and setting thereon.Resilient coating 3 can be provided with arbitrarily.In addition, laminated reflective film 2 is structures of multilayer, but illustrates with individual layer simplifiedly.
In addition, as shown in Figure 2, reflective photomask 20 of the present invention is except being provided with by replacing the light absorption lamination 4 that is made of the 1st light absorbing zone 41 and the 2nd light absorbing zone 42 and resilient coating 3a through pattern processing is set replacing having the structure same with Fig. 1 the resilient coating 3 through the 1st light absorbing zone 41a of pattern processing with through the light absorption lamination 4a that the 2nd light absorbing zone 42a of pattern processing constitutes.In reflective photomask 20, by the processing of this pattern, part is removed light absorption lamination 4 and the part of exposing the surface of a part of laminated reflective film 2 constitutes reflector space B, does not remove and the surface of residual light absorption lamination 4 constitutes absorption region A.At this moment, not shown cover layer can be set with protection laminated reflective film 2 between resilient coating 3 and laminated reflective film 2.As tectal material, can enumerate for example Ru, Zr, Si, Nb, their nitride and oxide etc.
The 1st light absorbing zone as the lower floor of light absorption lamination contains Ta and Si.
Ta is the high material of absorbability to the light in short wavelength zones such as EUV light.Yet Ta simple substance film is the film of the such crystalline state of α-Ta and β-Ta often.If such crystalline state, then owing to the influence of Ta crystalline particle, it is coarse that the surface becomes, and is difficult to obtain the high light absorption stack surface of flatness.In addition, because the influence of this Ta crystalline particle is difficult to obtain the good etching anisotropy of light absorption lamination for dry etching, it is coarse that pattern edge becomes, the tendency that exists the pattern precision to reduce.In the flatness of guaranteeing the light absorption stack surface, to carry out under the situation of pattern formation in the anisotropy processing by dry etching on this light absorption lamination, the crystalline state of preferred light absorbability lamination is unbodied.
If add an amount of Si in Ta, then there is the tendency of easy amorphization in the gained alloy.
Fig. 3 is the figure of expression about an example of the X ray diffracting data of the alloy film that is made of Ta and Si.
Among the figure, the 301st, the figure of the measurement result of the X-ray diffraction when expression Ta is 100at%, the 302nd, expression Ta is the figure of the measurement result of 96.5at%, the Si X-ray diffraction when being 3.5at%, the 303rd, and expression Ta is the figure of the measurement result of 94.1at%, the Si X-ray diffraction when being 5.9at%.In addition, peak C represents to exist (002) face of β-Ta, and peak D represents to exist Si (400) face, and peak E represents to exist (004) face of β-Ta.
By these figures as can be known, by add Si in Ta, then losing the crystallinity that can see in the Ta layer, is that alloy state about 5.9at% can be found amorphization by Si content.Hence one can see that, and the Si content in the 1st light absorbing zone preferred light absorbing film is at least 6at%.In addition, from the viewpoint of microfabrication, be if estimate the 1st light absorbing zone
Then the Si content in the light absorping film is preferably below the 15at%.In addition, the 1st light absorbing zone more preferably: Si content is 6at%～15at%, and Ta content is 85at%～94at%.If the Si content in the light absorping film is in described scope, then there is the tendency of easy amorphization in the crystalline state of the 1st light absorbing zone.In addition, if outside this scope, then there is the tendency of easy crystallization.If the Ta content in the light absorping film is in described scope, then there is the tendency of easy amorphization in the crystalline state of the 1st light absorbing zone.In addition, if outside this scope, then there is the tendency of easy crystallization.Perhaps, even in Ta, adding under the situation of Ge etc., because same effect also can obtain unbodied light absorping film.
Yet if the light absorption lamination is made of the simple layer of the alloy of above-mentioned Ta and Si, the light absorption stack surface reduces the reflection of light rate in EUV short wavelength zone.But for long 1 DUV (far ultraviolet) light of the inspection more than the order of magnitude of wavelength ratio EUV light, it is higher that the reflectivity of light absorption stack surface becomes easily.With in the inspection of reflective photomask, is to be that the catoptrical contrast that the light in the DUV optical wavelength zone about 190～260nm obtains is carried out by measuring the mask illumination wavelength in EUV light exposure.Therefore, for the light absorption lamination, requirement is compared with the laminated reflective film surface with buffer-layer surface, and EUV light exposure reflectivity is lower.Inspection usefulness DUV reflection of light rate on the light absorption stack surface is than buffer-layer surface and the laminated reflective film surface is low and it differs from big film, can obtain to check the high-contrast with DUV reflection of light light more, can carry out correct inspection.
This inspection wavelength contrast is preferably greater than 50%.
Contrast value r (%) is provided by following formula:
r＝{|Rm-Ra|/(Rm+Ra)}×100(％)
Wherein, Rm is the reflectivity of laminated reflective film surface or buffer-layer surface.In addition, Ra is the reflectivity of light absorption stack surface.The inspection of the pattern that forms on the light absorption lamination is undertaken by the reflectivity contrast that detects respectively with respect to the light absorption stack surface on buffer-layer surface and laminated reflective film surface.Wherein, most cases is that the reflectivity on luminance factor laminated reflective film surface of buffer-layer surface is little.Can think thus, and guarantee that the light absorption lamination is that contrast is compared with reflection differences between the laminated reflective film surface, obtain and resilient coating between contrast be difficulty more slightly.
As the material of resilient coating, can use for example SiO
2, Ru, ITO, Cr, Cr
xN
1-x, Cr
xO
1-x, C and B
4C etc.Using SiO
2, Ru situation under, although the reflectivity in the DUV optical wavelength zone also depends on its thickness, often be about 40～50%.Therefore,, obtain to obtaining to be better than the necessary scope of light absorption lamination of 50% contrast to DUV reflection of light rate if by the formula of above-mentioned expression contrast, then the light absorption lamination to DUV reflection of light rate preferably less than 13%.
According to the 1st viewpoint of the present invention, in order to reduce the DUV light exposure reflectivity of light absorption lamination, stacked its formed different with the 1st light absorbing zone and comprised the 2nd light absorbing zone of Ta, Si and N on the 1st light absorbing zone.By the 2nd light absorbing zone being set at the nitride of metal, compare with the situation of metal film simple substance, can reduce its DUV light exposure reflectivity.And simultaneously,, can promote the micro-crystallizationization even the amorphization of film, the effect of the surface smoothing that therefore can constantly be improved because the nitrogenize of metal is compared with the situation of metal simple-substance.The 2nd light absorbing zone preferably becomes the top of light absorption lamination.In addition, as the 2nd light absorbing zone,, also having same effect aspect the reduction DUV light exposure reflectivity, but in this case, existing the reduction that is accompanied by conductivity to produce the tendency that electric charge raises even under the situation of using metal oxide.
According to the 1st viewpoint of the present invention, the 2nd light absorbing zone preferably contains the Si of 40～60at%.In addition, the 2nd light absorbing zone preferably contains the Si of 40～60at%, the Ta of 2～7at%.In addition, the 2nd light absorbing zone preferably contains the Ta of Si, 2～7at% of 40～60at% and the N of 6～15at%.
In addition, according to the 1st viewpoint of the present invention, if the Si content in the 2nd light absorbing zone is less than 40at%, then the DUV light transmission in the 2nd light absorbing zone reduces easily.Thus, the tendency that exists the influence of the interference between the reverberation (2) on the reverberation (1) on the 1st light absorbing zone surface in the light absorption lamination and the 2nd light absorbing zone surface to reduce easily.The effect that the light in described reverberation (1) and these 2 paths of reverberation (2) is cancelled out each other is depended in the influence of this interference.This effect is high more, then can reduce the final reflectivity on the surface of light absorption lamination 4 more.If the amount of Si is more than 60at%, then there is the tendency that raises in the DUV light transmission on the 1st light absorbing zone, and reverberation (2) increases easily, and therefore the effect of low reflection suffers damage easily.In addition, because the increase of Si amount, conductivity can descend, thereby causes the rising of carried charge, and existence can't ignore because the influence of this charged generation, not good etc. the tendency of generation pattern in the pattern plotter that uses electron beam for example.
In addition, according to the 1st viewpoint of the present invention, if the Ta content in the 2nd light absorbing zone is less than 2at%, then the absorbability to EUV light reduces, and there is the tendency that requires to thicken thickness in the therefore light absorption in order to obtain to stipulate.If the content of the Ta in the 2nd light absorbing zone is more than 7at%, then owing to light absorption increases, the DUV light transmission reduces, because of there is the tendency that the low effect that reflects suffers damage in the 2nd light absorbing zone in the influence of interfering.
In addition,,, then be accompanied by light transmission and reduce if the N content in the 2nd light absorbing zone is less than 6at% according to the 1st viewpoint of the present invention, because the influence of interfering, the tendency that exists the effect of the low reflection of the 2nd light absorbing zone to suffer damage.If the N content in the 2nd light absorbing zone is more than 15at%, the then light absorption in order to obtain to stipulate by the absorptivity that reduces EUV light exists to require to thicken the tendency of thickness, and exists surface roughness to increase such tendency on the contrary.
According to the 1st viewpoint of the present invention, in the 2nd light absorbing zone, if the content of Ta, Si and N respectively in above-mentioned scope, then can constantly improve the reflectivity and the flatness on surface.Like this, in the present invention, set the light absorption lamination for stepped construction, can and check that the reflectivity of the light absorption stack surface of wavelength suppresses lowlyer the reflectivity of the light absorption lamination of exposure wavelength.
In addition, as the material that DUV light is had light absorption, also can consider to use the Si nitride that does not contain Ta.Yet, in this case, because the absorbability of EUV light is descended, must must thicker such drawback so exist with the thickness setting of the 1st light absorbing zone.On the contrary, in the present invention, owing to set for not only in the 1st light absorbing zone as the lower floor of light absorption lamination, and in the 2nd light absorbing zone, all comprise the high this structure of material of the such absorptivity of Ta to EUV light as the upper strata, therefore can also reduce the thickness of light absorption lamination integral body.
In addition, preferred its surface roughness of the light absorption lamination that uses among the present invention is as below the 1nmRms.More preferably below the 0.6nmRms.If surface roughness is below the 1nmRms, then in the patterning that is undertaken by the dry etching processing of light absorption lamination, has the such advantage of linearity of the pattern end after easy acquisition is processed.Yet if surface roughness surpasses 1nmRms, light absorption stack surface end becomes coarse, the tendency that exists the pattern precision to reduce.
In the present invention, the light absorption lamination is to stack gradually the 1st light absorbing zone and the 2nd light absorbing zone on laminated reflective film, if but anti-sequential cascade the 1st light absorbing zone and the 2nd light absorbing zone, then decide by the lip-deep reflectivity of the 1st light absorbing zone, the influence of interfering reduces, thereby has the tendency that is difficult to obtain low reflecting effect.
Laminated reflective film for example can form by the layer that stacked repeatedly Mo layer and Si layer or Mo layer and Be layer about about 30～40 cycles make up like this.Each layer can for example be the thickness formation of 2.8nm～4.2nm with per 1 layer.
According to the manufacture method of semiconductor device of the present invention,, therefore can make semiconductor device with miniaturization pattern owing to can in the EUV photoetching process, carry out the high pattern transfer of precision.Promptly, the EUV light that sends from the EUV light source with condenser optically focused reflection also shines reflective photomask of the present invention, will be coated with EUV light with reduced projection exposure on the wafer surface of resist by the EUV light of reflective photomask pattern-forming by reflective projection optics system.Then, forming the resist pattern of expectation by developing, is mask with this resist pattern, and wafer surface is carried out etching, thereby makes the semiconductor device with fine pattern.
In addition, according to the 2nd viewpoint of the present invention, in order to reduce the DUV light exposure reflectivity of light absorption lamination, on the 1st light absorbing zone, stacked its formed different with the 1st light absorbing zone and comprised the 2nd light absorbing zone of Ta, Si and O.In addition, the 2nd light absorbing zone can comprise Ta, Si, O and N.By the 2nd light absorbing zone being set at the oxide of metal, compare with the situation of metal film simple substance, can reduce its DUV light exposure reflectivity.By the 2nd light absorbing zone being set at the oxide skin(coating) or the oxynitride layer of metal, compare with the situation of metal simple-substance layer, can promote micro-crystallizationization or amorphization.So effect of the flatness on the light absorbing zone surface that can be improved.The 2nd light absorbing zone preferably becomes the top of light absorption lamination.
But, like this top of light absorption lamination is being set under the situation of the such reactive membrane of oxide or nitrogen oxide, according to the degree of the Si ratio in its reactivity and the 2nd light absorbing zone, exist the reduction that is accompanied by conductivity to produce the tendency that electric charge raises.
Therefore, in the 2nd viewpoint of the present invention, the 2nd light absorbing zone of use is except comprising Ta, Si and O, and its extinction coefficient is less than 1, and its square resistance is below 50M Ω/.
In addition, for the 2nd light absorbing zone of the 1st viewpoint of the present invention, also preferred its extinction coefficient is less than 1, and its square resistance is below 50M Ω/.
Because the 2nd light absorbing zone has the following square resistance of 50M Ω/, raise so can prevent the uppermost electric charge of light absorption lamination, therefore when electron beam drawing light absorption lamination, can to produce pattern not good owing to charged.
By using Ta, can obtain light absorption, and can reduce its thickness EUV light.In addition, since its extinction coefficient less than 1, so have the transparent such advantage that can guarantee to be used for obtaining the catoptrical interference effect of the 2nd light absorbing zone.If this extinction coefficient is higher than 1, then the transparency in the 2nd light absorbing zone is not enough, and the interference effect reduction between the reverberation that therefore has the 2nd light absorbing zone and the reverberation of the 1st light absorbing zone can't obtain enough such shortcomings of low reflecting effect.
Like this, according to the 2nd viewpoint of the present invention, can be in the flatness of guaranteeing the 2nd light absorbing zone surface, carrying out pattern by the anisotropy processing of using dry etching on the 1st and the 2nd light absorbing zone forms, and the crystalline state that forms its material is unbodied, therefore pattern edge is clear, and can prevent that the electric charge in the 2nd absorber layers from raising, so the pattern precision of light absorption lamination becomes good.
According to the 2nd viewpoint of the present invention, under the less situation of the Ta of the 2nd light absorbing zone ratio, for example under Ta content is situation below about 40at% of the 2nd light absorbing zone, as the 2nd light absorbing zone, by using oxide-film that forms in fact by Ta, Si and O or the nitrogen oxidation film that forms in fact by Ta, Si, O and N, can obtain the extinction coefficient and the square resistance of expected range.
At Fig. 4 and Fig. 5 is expression about the figure of the relation of the extinction coefficient of the less TaSi class material of Ta content and square resistance.
Fig. 4 represents the characteristic of oxide-film (TaSiO film), and Fig. 5 represents the characteristic of nitrogen oxidation film (TaSiON film).
The sample that uses be thickness form on as the synthetic quartz substrate of 0.525mm thickness as the TaSi of 75nm as the 1st light absorbing zone after, form oxide-film that thickness is 27nm (TaSiO film) or nitrogen oxidation film (TaSiON film) as described below as the 2nd light absorbing zone.
In addition, the oxide-film of described sample, nitrogen oxidation film form by sputtering method.
For the sputter of each light absorbing zone, at first, under the situation that forms the 1st light absorbing zone, use 2 yuan TaSi alloys target and Ta target, in addition, under the situation that forms the 2nd light absorbing zone, use 2 yuan Ta and Si, carry out sputter by being adjusted at the DC power that applies on each target.Sputter gas atmosphere is Ar for the 1st light absorbing zone, for the 2nd light absorbing zone, is Ar and O under the situation of TaSiO
2, be Ar, O under the situation of TaSiON
2And N
2
As shown in Figure 4 and Figure 5, have less than 1 extinction coefficient with less than the film of the square resistance of 50M Ω/ and in any composition of TaSiO and TaSiON, all can obtain.
In Fig. 4 and film shown in Figure 5, for extinction coefficient and square resistance, film to the scope that satisfies desired extinction coefficient and square resistance has carried out composition analysis, the result as can be known, in TaSiO, preferred Ta is 30～40at%, and the ratio of components of Ta and O (Ta: O) 1: 1～1: 2 scope.In TaSiON, preferred Ta is 20～40at%, and the ratio of components of Ta and O (Ta: O) be the ratio of components (Ta: N) be 1: 2～3: 2 of 3: 2～9: 1 and Ta and N.In addition, preferred Ta is 30～40at%.This is owing to improve the Ta ratio, can demonstrate high absorption characteristic, therefore can realize filming, helps microfabrication.
In addition, according to the 2nd viewpoint, under the less situation of the Ta of the 2nd light absorbing zone ratio, for example under the Ta ratio is situation below about 40at% of the 2nd light absorbing zone, as the 2nd light absorbing zone, by using the oxide-film that forms in fact by Ta, Si and O, can obtain the extinction coefficient and the square resistance of expected range.
Fig. 6 and Fig. 7 are the figure of expression about the relation of the extinction coefficient of the bigger TaSi class material of Ta content and square resistance.
Fig. 6 represents the characteristic of oxide-film (TaSiO film), and Fig. 7 represents the characteristic of nitrogen oxidation film (TaSiON film).
The sputter of the light absorbing zone of each sample is to use 2 yuan TaSi
4And Ta, be adjusted at the DC power that applies on each target to improve Ta content.In this case, for example with TaSi
4Target is set at 50W, and the Ta target is set at 250W.Under the situation that forms the 1st light absorbing zone, gas atmosphere is set at Ar, under the situation that forms the TaSiO film, the gas atmosphere in the sputter is set at Ar/O
2, under the situation that forms the TaSiON film, gas atmosphere is set at Ar/O
2/ N
2
As shown in Figure 6 and Figure 7, under the high situation of Ta content, as shown in Figure 6, under the situation of TaSiO, can form the film of the desired scope that satisfies extinction coefficient and square resistance.Yet, as shown in Figure 7, in TaSiON, be difficult to obtain satisfy the film of the desired scope of extinction coefficient and square resistance.This is owing to be in the film of main body in nitrogenize, is accompanied by the increase of Ta ratio in the film, because the influence of the big TaN of extinction coefficient, is difficult to guarantee the transparency that realizes by oxygen.
Therefore, as shown in Figure 7 as can be known, be under the situation of nitrogenize substrate at film, even under the situation of the oxygen flow that improves atmosphere, the reduction of extinction coefficient is also little, and the increase of square resistance becomes problem, is difficult to obtain meet the desired the film of the scope of extinction coefficient and square resistance.
In Fig. 6 and film shown in Figure 7, for extinction coefficient and square resistance, the film of the scope that satisfies desired extinction coefficient and square resistance has been carried out composition analysis, the result is as can be known, preferred Ta is 40～90at%, and the ratio of components of Ta and O (Ta: O) 3: 5～5: 1 scope.In addition, in said sample, only need to change gas atmosphere and just can use same target to form the 1st light absorbing zone and the 2nd light absorbing zone, therefore have the advantage that can be simplified to membrane process.
In addition, the relation to TaSiN has also studied extinction coefficient and square resistance obtains the result as Fig. 8.
The sample that uses is to adopt 2 yuan Ta and Si, with Ar and N
2Gas carries out sputter as sputtering atmosphere, makes to contain the tantalum of 2～7at%, the silicon of 40～60at% and the nitrogen of 6～15at%.
As shown in the figure, all TaSiN all are that square resistance is low, are below 50M Ω/, are difficult to chargedly, but the extinction coefficient that obtains the 2nd light absorbing zone is easily greater than 1.But, can know to make square resistance and extinction coefficient all below desired value.
By Fig. 4～Fig. 8 as can be known, TaSiO guarantees the transparency, thereby is favourable owing to can reduce the extinction coefficient of the 2nd light absorbing zone, but the tendency that exists square resistance to uprise.On the other hand, can know that TaSiN is being disadvantageous slightly reducing aspect the extinction coefficient of the 2nd light absorbing zone, but has the enough low advantage of square resistance, TaSiON demonstrates all therebetween characteristics of extinction coefficient and square resistance.
In addition, the TaSi film is compared with above-mentioned TaSiN film, TaSiO film and TaSiON film, and its extinction coefficient is bigger.
In the invention of the 2nd viewpoint, with the 2nd light absorbing zone or be set at the little film of Ta content, or be set at the big film of Ta content, or form, or form by nitrogen oxidation film by oxide-film, all can suitably select from the dry-type processing characteristic of light absorption lamination.
For example, the superiors are being set at the 2nd light absorbing zone, and the 2nd light absorbing zone is set under the situation of the little oxide-film of Ta content (TaSiO film), can be after gas carries out patterning to the 2nd light absorbing zone by fluorine, using chlorine is the etching that gas carries out the 1st light absorbing zone (TaSi film).
In this case, fluorine is that gas is bigger usually to the etch-rate of resist, therefore the 2nd little light absorbing zone of Ta content is the etch quantity increase of the resist in the TaSiO etching, but in the etching of the 1st light absorbing zone (TaSi film), also atmosphere gas can be switched to chlorine is gas, with the 2nd light absorbing zone (TaSiO film) is mask, carries out the etching of the 1st light absorbing zone (TaSi film).
In addition, the superiors are being set at the 2nd light absorbing zone, and the 2nd light absorbing zone is set under the situation of the big nitrogen oxidation film (TaSiON film) of the little nitrogen oxidation film of Ta content (TaSiON film), oxide-film (TaSiO film) that Ta content is big or Ta content, can use chlorine is that this is two-layer for gas dry etching the 1st and the 2nd light absorbing zone.Usually, using chlorine is that the etch quantity of the resist of gas is that the situation of gas is compared with using fluorine, and chlorine is that the etch quantity of gas is less.Therefore can fully guarantee resist patience.
In addition, as mentioned above, preferred light absorbability lamination is less to DUV reflection of light rate.Therefore, be situation below 10% for the reflectivity Ra of the inspection wavelength of the 257nm when the 2nd light absorbing zone is TaSiO, obtain the relation of the 1st light absorbing zone and the 2nd light absorbing zone.
The 2nd light absorbing zone for example is that then extinction coefficient is the smaller the better less than the value of 50M Ω/ as long as its square resistance is in preferred range.Therefore, when obtaining described the relation, in the scope of square resistance less than 50M Ω/, obtaining the 2nd light absorbing zone by Fig. 4 and Fig. 6 and can be the extinction coefficient of minimum, is 0.4.In addition, the 1st light absorbing zone for example the TaSi film owing to be metal film, as long as therefore be
Above thickness, then film is just less to the influence of DUV light reflectivity, therefore when obtaining above-mentioned relation, the thickness of the 1st light absorbing zone is set at
Refractive index is a typical value with 1.8.In addition, in Fig. 4 and Fig. 6, the refractive index of the 2nd light absorbing zone in preferable range is about 2.0 numerical value, and therefore the refractive index of the 2nd light absorbing zone is a typical value with 2.0.
Fig. 9 is illustrated under such condition, is 2,4,6,8 and the figure of the relation of the thickness of the extinction coefficient of 10% o'clock the 1st light absorbing zone and the 2nd light absorbing zone at the reflectivity Ra of the inspection wavelength of 257nm.
As shown in the figure, the relation of the thickness of the extinction coefficient of the 1st light absorbing zone and the 2nd light absorbing zone is the figure of contour wire.The thickness that will design the high project of the degree of freedom, the extinction coefficient that is about to the 1st light absorbing zone and the 2nd light absorbing zone like this is as parameter, by preestablishing aforesaid other numerical value, can select then to check that the reflectivity Ra of wavelength is the combination of the suitable parameter below 10%.Therefore, by determining each numerical value of predefined the 1st light absorbing zone easily, just can try to achieve the thickness of the 2nd light absorbing zone.
Here, for checking that wavelength is that the situation of 257nm has carried out asking calculation, checks that for other wavelength also can carry out the same calculation of asking.In addition, TaSiN and the TaSiON for the 2nd light absorbing zone shown in other the present invention also can be in the hope of calculating.
In addition, for convenience's sake, above-mentioned TaSiO film is Ta for example
aSi
bO
1-a-bMode is represented in the omission of film etc., and above-mentioned TaSiON film is Ta for example
cSi
dO
eN
1-c-d-eMode is represented in the omission of film etc., and above-mentioned TaSiN film is Ta for example
fSi
gN
1-f-gMode is represented in the omission of film etc.Wherein, a, b, c, d, e, f and g are the positive numbers of less than 1,1＞a+b, 1＞c+d+e, 1＞f+g.
Embodiment below is shown, the present invention is carried out more specific description.
In Figure 10～Figure 13, represent the constructed profile of manufacturing process of an example of the reflective photomask of the present invention's the 1st viewpoint respectively.
At first, form laminated reflective film 2, resilient coating the 3, the 1st light absorbing zone 41 and the 2nd light absorbing zone 42 as described below successively on substrate 1, preparation has the reflective photomask blank of the present invention 10 with spline structure with Fig. 1.
As substrate 1, preparing by the profile that lapped face has formed tabular surface is that 6 inches square, thickness are 0.25 inch synthetic quartz.
On substrate 1, pass through the alternately laminated Mo of DC magnetron sputtering and about 40 cycles of Si, thereby preparation reaches the laminated reflective film 2 of maximum to the EUV reflection of light rate in wavelength 13～14nm zone.In addition, this laminated reflective film 2 is a multilayer film, but in order to simplify, represents with individual layer among the figure.
This moment, the thickness by 1 cycle that Mo and Si constitute was 7nm, and wherein the thickness of Mo is 2.8nm, and Si is 4.2nm, and last Si forms the film of 7nm, makes that the superiors of laminated reflective film 2 are Si.
Then, on this laminated reflective film 2, form the resilient coating 3 that constitutes by Ru with the film of 40nm.
Then, the substrate 1 that will be formed with laminated reflective film 2 and resilient coating 3 is placed in the DC magnetic controlled tube sputtering apparatus.The ratio that uses Ta and Si in the DC magnetic controlled tube sputtering apparatus is 1: 4 TaSi alloys target and a Ta target, 2 yuan of sputters under the Ar gas atmosphere of the DC power by having applied 50W and 250W respectively to TaSi alloys target and Ta target, under the gas pressure of 0.25Pa, on resilient coating 3, form the 1st light absorbing zone 41 of thickness 75nm.At this moment, the surface roughness of the 1st light absorbing zone 41 after the film forming is 0.14nmRms, has good surface smoothness.
After forming light absorping film 41, the ratio that uses Ta and Si is 1: 4 TaSi alloys target and a Ta target, by applied the Ar and the N of the DC power of 50W and 250W respectively to TaSi alloys target and Ta target
2Ratio be 2 yuan of sputters under 1: 1 the mixed-gas atmosphere, under the gas pressure of 0.25Pa, forming with Ta, Si and N on the 1st light absorbing zone 41 is the 2nd light absorbing zone 42 of the thickness 15nm of principal component.At this moment, the surface roughness of the 2nd light absorbing zone 42 after the film forming is 0.42nmRms, has good surface smoothness.
In addition, to stacked the 2nd the light absorbing zone 42 and uppermost spectral reflectance of the light absorption lamination 4 that forms is measured on the 1st light absorbing zone 41 as mentioned above.
As a result, spectral reflectance is 4.25% at wavelength 193nm place, is 9.83% at the 257nm place, has obtained enough antiradar reflectivity characteristics in inspection with DUV optical wavelength zone.
Then, coating eurymeric electron sensitive resist (FEP-171: the Off イ of Fuji Le system ア-チ system), as shown in figure 10, form resist layer on the 2nd light absorbing zone 42.
Then, carry out pattern processing, as shown in figure 11, form the pattern 5a of resist by the lithography process that adopts EB to describe and to develop.
And then, be mask with resist pattern 5a, carry out dry etching according to the order of the 2nd light absorbing zone 42 and the 1st light absorbing zone 41, thereby form the pattern of light absorption lamination 4a as shown in figure 12.At this moment, in dry etching, use the dry etching device of ICP discharge mode, at Cl
2The air pressure that the mist of gas 40sccm and He gas 65sccm forms is under the atmosphere of 5mTorr, carries out dry etching with 40W substrate bias power and 200W source power.Then, pass through O
2Ashing and wet processed are peeled off resist.Continuously when dry etching the 2nd light absorbing zone 42 and the 1st light absorbing zone 41 with respect to the selection of the resist of final light absorption lamination 4 than being about 0.85.
Here, part is removed light absorption lamination 4 and the inspection wavelength reflectivity of the 257nm on resilient coating 3 surfaces in the zone of exposing is 52.4%.On the other hand, the reflectivity of the lip-deep 257nm of light absorption lamination 4a of absorption region is 10.5%.As a result, between resilient coating 3 surface reflections and light absorption lamination 4 surface reflections, obtained 66% good contrast value.
Then, except with Cl
2Gas 40sccm and O
2The mixed-gas atmosphere replaced C l of gas 25sccm
2The mixed-gas atmosphere of gas 40sccm and He gas 65sccm and the 2nd light absorbing zone 42 carried out as mask beyond the dry etching of the Ru resilient coating 3 under the light absorption lamination 4, carry out equally with the dry etching of light absorption lamination 4, as shown in figure 13, obtain to have the pattern of anisotropic resilient coating 3a of good sidewall and light absorption lamination 4a.
Like this, obtained to have the reflective photomask of the present invention 20 with spline structure with Fig. 2.
Here, part is removed resilient coating 3 and light absorption lamination 4 and the inspection wavelength reflectivity of the 257nm on the laminated reflective film surface of the reflector space B that exposes is 60%.On the other hand, the state of the luminance factor reflective photomask blank 10 of the lip-deep 257nm of light absorption lamination 4a of absorption region A has a little reduction, is 9.2%.Can think that this is owing to the coating of resist, peel off and mainly due to being the etching that mask carries out the 1st light absorbing zone with the 2nd light absorbing zone, light absorption lamination 4a surface becomes as a result, and some is coarse.
As a result, between laminated reflective film 2 surface reflections and light absorption lamination 4 surface reflections, obtained 73% good contrast value.
Except the film formation time of sputter prolongs than embodiment 1, form to have beyond the 2nd light absorbing zone of 20nm thickness, prepare other example of the reflective photomask blank of the 1st viewpoint similarly to Example 1.
Measure the uppermost spectral reflectance of the light absorption lamination 4 of gained reflective photomask blank similarly to Example 1.
As a result, be 8.85% at wavelength 193nm place, be 1.93% at the 257nm place, obtained enough antiradar reflectivity characteristics in this case, in particular in the inspection of 257nm with DUV optical wavelength zone.
Then, use this reflective photomask blank, carry out preparation, the Cl of reflective photomask similarly to Example 1
2With behind the dry etching of He mixed-gas atmosphere and Cl
2And O
2The mensuration of the inspection wavelength reflectivity of the 257nm behind the dry etching of mixed-gas atmosphere.
The inspection wavelength reflectivity of the 257nm of the buffer-layer surface in the zone of partly removing the light absorption lamination and exposing is 52.0%.On the other hand, the reflectivity of the 257nm on the light absorption stack surface of absorption region is 2.1%.As a result, between buffer-layer surface reverberation and light absorption stack surface reverberation, obtained 92% good contrast value.
In addition, the inspection wavelength reflectivity of the 257nm of the light absorption stack surface on surface of the laminated reflective film on the reflector space and the absorption region is respectively 60% and 1.5%.As a result, between the surface reflection of the surface reflection of laminated reflective film and light absorption lamination, obtained 95% such high contrast values.
Figure 14 is the figure of expression spectral reflectance characteristic of light absorption lamination when changing the thickness of the 1st light absorbing zone and the 2nd light absorbing zone according to embodiment 1 and embodiment 2.
Among the figure, for example curve 401 is figures of spectral reflectance characteristic of light absorption lamination of embodiment 1 of the 2nd light absorbing zone of stacked the 1st light absorbing zone of 750 dusts of expression, 150 dusts, curve 402 be expression stacked the figure of spectral reflectance characteristic of light absorption lamination of embodiment 2 of the 2nd light absorbing zone of the 1st light absorbing zone of 750 dusts, 200 dusts.
As shown in the figure, higher in the absorption of the light of the wavelength region may of about 190nm～about 230nm in curve 401, in curve 402, higher in the absorption of the light of the wavelength region may of about 230nm～about 260nm.As the inspection light of reflective photomask, can use the light of wavelength region may of light, for example 193nm or the 257nm of the wavelength region may of 190～260nm in the far ultraviolet wavelength region may.Hence one can see that, and as shown in figure 14, when the 1st light absorbing zone was 750 dusts, the preferred thickness of the 2nd light absorbing zone was 150～200 dusts.
Similarly to Example 1, on substrate, form laminated reflective film and the 1st light absorbing zone.
Then, use Ta target and Si target, at Ar/O
2In the mixed-gas atmosphere of=36/4 (sccm), under the gas pressure of 0.25Pa, Ta target and Si target are applied the DC power of 60W and 240W respectively, thereby have the TaSi class oxide-film of 27nm thickness by 2 yuan of sputters formation.At this moment, the surface roughness of the upper strata absorber layers after the film forming is 0.42nmRms, has good surface smoothness.In addition, the ratio of components of the TaSi class oxide-film of making is: Ta is 33at%, O
2Be 36at%.The measurement result of the most surperficial spectral reflectance of gained light absorption lamination shown in Figure 15.At wavelength 193nm place is 2.55%, is 1.51% at the 257nm place, has obtained enough low reflection characteristics in inspection with DUV optical wavelength zone.
Then, on the 2nd light absorbing zone, be coated with eurymeric electron sensitive resist (FEP-171: the Off イ of Fuji Le system ア-チ system), form resist layer, describe and the pattern of the resist that develops lithography process such and form similarly to Example 1 by EB.
And then, as mask, at first, in the dry etching device of ICP discharge mode, use C with the resist pattern
2F
6/ O
2The mist of/He=5/5/15 (sccm) is under the atmosphere of 665mPa at air pressure, carries out the etching of the 2nd light absorbing zone with 20W substrate bias power and 100W source power.Then, use Cl
2The mist of/He=40/60 (sccm) is under the atmosphere of 665mPa at air pressure, with 40W substrate bias power and 200W source power, carries out the etching of the 1st light absorbing zone in same device.Then, peel off resist layer similarly to Example 1.
Here, part is removed absorber layers 4 and the inspection wavelength reflectivity of the 257nm on resilient coating 3 surfaces in the zone of exposing is 52.40%.Obtained the reflectivity higher, helped to improve the inspection characteristic than common estimate.On the other hand, the reflectivity of the lip-deep 257nm of absorber layers 4a of absorption region is 1.85%.As a result, between resilient coating 3 surface reflections and absorber layers 4 surface reflections, obtained 93.2% good contrast value.
In addition, except removing the resilient coating that exposes similarly to Example 1, beyond the composition difference of the 2nd light absorbing zone 42a, obtained to have the reflective photomask with the present invention's the 2nd viewpoint of spline structure with Figure 13.
Here, remove resilient coating and light absorption lamination and the inspection wavelength reflectivity of the 257nm on the laminated reflective film surface of exposing is 60%.On the other hand, the state of the luminance factor reflective photomask blank of the 257nm on the light absorption stack surface has a little reduction, is 1.02%.As a result, between the surface reflection of the surface reflection of laminated reflective film and light absorption lamination, obtained 96.7% good contrast value.
More than, by embodiment 1～3 as can be known, according to the present invention, the light absorption lamination that uses in reflective photomask blank and the reflective photomask is owing to contain the lamination of the 2nd low light absorbing zone of the 1st low light absorbing zone of EUV light exposure reflectivity and low resistance and DUV light exposure reflectivity, so not only when carrying out the pattern transfer exposure by the exposure of EUV light, and when checking exposure by DUV light, all can obtain good reflectivity contrast with respect to reflector space, the inspection precision of reflective photomask and its pattern transfer precision become good.In addition, carry out the exposure of EUV light, can make semiconductor device with the high fine pattern of precision by using this reflective photomask.
Claims (12)
1, a kind of reflective photomask blank is characterized in that, described reflective photomask blank has:
Substrate,
Be arranged on laminated reflective film on this substrate,
Comprise and be arranged on this laminated reflective film and contain the 1st light absorbing zone of tantalum and silicon and be layered on the 1st light absorbing zone and contain at least a, tantalum in nitrogen and the oxygen and the light absorption lamination of the 2nd light absorbing zone of silicon.
2, reflective photomask blank according to claim 1 is characterized in that, less than 1, and the square resistance of described the 2nd light absorbing zone is less than 50M Ω/ at the extinction coefficient of the wavelength of 190～260nm for described the 2nd light absorbing zone.
3, reflective photomask blank according to claim 1 and 2 is characterized in that, described the 2nd light absorbing zone contains tantalum, silicon and nitrogen, and contains the tantalum of 2～7at%, the silicon of 40～60at% and the nitrogen of 6～15at%.
4, reflective photomask blank according to claim 1 and 2 is characterized in that, described the 2nd light absorbing zone contains tantalum, silicon and oxygen, and the content of tantalum is 30～40at%, and the atomic ratio of tantalum and oxygen is 1: 1～1: 2.
5, reflective photomask blank according to claim 1 and 2, it is characterized in that described the 2nd light absorbing zone contains tantalum, silicon, oxygen and nitrogen, the content of tantalum is 20～40at%, the atomic ratio of tantalum and oxygen is 3: 2～9: 1, and the atomic ratio of tantalum and nitrogen is 1: 2～3: 2.
6, reflective photomask blank according to claim 1 and 2 is characterized in that, described the 2nd light absorbing zone contains tantalum, silicon and oxygen, and the content of tantalum is 40～90at%, and the atomic ratio of tantalum and oxygen was 3: 5～5: 1 scope.
7, reflective photomask blank according to claim 1 is characterized in that, the surface of described the 2nd light absorbing zone has the following surface roughness of 0.6nmRms.
8, reflective photomask blank according to claim 1 is characterized in that, described the 1st light absorbing zone contains the silicon of 6～15at%.
9, reflective photomask blank according to claim 1 is characterized in that, described the 1st light absorbing zone and described the 2nd light absorbing zone are unbodied.
10, reflective photomask blank according to claim 1 is characterized in that, the reflectivity that described light absorption is stacked in the far ultraviolet zone is below 13%.
11, a kind of reflective photomask is characterized in that, described reflective photomask carries out pattern processing to the light absorption lamination of each described reflective photomask blank in the claim 1～10 and obtains, and described reflective photomask blank has:
Substrate,
Be arranged on laminated reflective film on this substrate,
Comprise and be arranged on this laminated reflective film and contain the 1st light absorbing zone of tantalum and silicon and be layered on the 1st light absorbing zone and contain at least a, tantalum in nitrogen and the oxygen and the light absorption lamination of the 2nd light absorbing zone of silicon.
12, a kind of manufacture method of semiconductor device, it comprises following operation: to the described reflective photomask irradiation of claim 11 extreme ultraviolet, utilize its reverberation that the extreme ultraviolet that is arranged on the semiconductor substrate is exposed with resist layer, thus pattern transferring.
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| JP2004358736 | 2004-12-10 | ||
| JP358736/2004 | 2004-12-10 | ||
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| JP5273143B2 (en) * | 2008-04-23 | 2013-08-28 | 旭硝子株式会社 | Reflective mask blank for EUV lithography and reflective mask for EUV lithography |
| KR20110090887A (en) * | 2008-10-30 | 2011-08-10 | 아사히 가라스 가부시키가이샤 | Reflection-type mask blank for euv lithography |
| US8841047B2 (en) * | 2012-04-02 | 2014-09-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Extreme ultraviolet lithography process and mask |
| US8658333B2 (en) * | 2012-06-04 | 2014-02-25 | Nanya Technology Corporation | Reflective mask |
| US9195132B2 (en) * | 2014-01-30 | 2015-11-24 | Globalfoundries Inc. | Mask structures and methods of manufacturing |
| CN111308856A (en) * | 2014-03-11 | 2020-06-19 | 芝浦机械电子株式会社 | Cleaning device for reflection type mask and cleaning method for reflection type mask |
| DE102014216121A1 (en) * | 2014-08-13 | 2016-02-18 | Carl Zeiss Smt Gmbh | Mask for EUV lithography, EUV lithography equipment and method for determining a contrast fraction caused by DUV radiation |
| DE102015108569B4 (en) * | 2015-05-29 | 2020-10-08 | Advanced Mask Technology Center Gmbh & Co. Kg | Reflective photo mask and reflection type mask blank |
| JP7346088B2 (en) * | 2019-05-31 | 2023-09-19 | 株式会社トッパンフォトマスク | Reflective photomask blanks and reflective photomasks |
| KR20210127851A (en) * | 2020-04-14 | 2021-10-25 | 삼성전자주식회사 | Phase shift mask for extreme ultraviolet lithography |
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| JPH10198023A (en) * | 1997-01-09 | 1998-07-31 | Nec Corp | X-ray exposure mask and its production |
| JP2001237174A (en) * | 2000-02-25 | 2001-08-31 | Oki Electric Ind Co Ltd | Reflection-type exposure mask |
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