CH441512A - Lateral transistor and method for its manufacture - Google Patents
Lateral transistor and method for its manufactureInfo
- Publication number
- CH441512A CH441512A CH1113266A CH1113266A CH441512A CH 441512 A CH441512 A CH 441512A CH 1113266 A CH1113266 A CH 1113266A CH 1113266 A CH1113266 A CH 1113266A CH 441512 A CH441512 A CH 441512A
- Authority
- CH
- Switzerland
- Prior art keywords
- manufacture
- lateral transistor
- transistor
- lateral
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1113266A CH441512A (en) | 1966-08-02 | 1966-08-02 | Lateral transistor and method for its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1113266A CH441512A (en) | 1966-08-02 | 1966-08-02 | Lateral transistor and method for its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
CH441512A true CH441512A (en) | 1967-08-15 |
Family
ID=4370378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1113266A CH441512A (en) | 1966-08-02 | 1966-08-02 | Lateral transistor and method for its manufacture |
Country Status (1)
Country | Link |
---|---|
CH (1) | CH441512A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2068633A1 (en) * | 1969-11-25 | 1971-08-27 | Itt | |
US3663872A (en) * | 1969-01-22 | 1972-05-16 | Nippon Electric Co | Integrated circuit lateral transistor |
DE3618166A1 (en) * | 1986-05-30 | 1987-12-03 | Telefunken Electronic Gmbh | LATERAL TRANSISTOR |
US5605850A (en) * | 1993-09-27 | 1997-02-25 | Sgs-Thomson Microelectronics S.R.L. | Method for making a low-noise bipolar transistor |
-
1966
- 1966-08-02 CH CH1113266A patent/CH441512A/en unknown
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3663872A (en) * | 1969-01-22 | 1972-05-16 | Nippon Electric Co | Integrated circuit lateral transistor |
FR2068633A1 (en) * | 1969-11-25 | 1971-08-27 | Itt | |
DE3618166A1 (en) * | 1986-05-30 | 1987-12-03 | Telefunken Electronic Gmbh | LATERAL TRANSISTOR |
US4829356A (en) * | 1986-05-30 | 1989-05-09 | Telefunken Electronic Gmbh | Lateral transistor with buried semiconductor zone |
US5605850A (en) * | 1993-09-27 | 1997-02-25 | Sgs-Thomson Microelectronics S.R.L. | Method for making a low-noise bipolar transistor |
US5828124A (en) * | 1993-09-27 | 1998-10-27 | Sgs-Thomson Microelectronics S.R.L. | Low-noise bipolar transistor |
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